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JPH02165880A - laser marker - Google Patents

laser marker

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Publication number
JPH02165880A
JPH02165880A JP88316388A JP31638888A JPH02165880A JP H02165880 A JPH02165880 A JP H02165880A JP 88316388 A JP88316388 A JP 88316388A JP 31638888 A JP31638888 A JP 31638888A JP H02165880 A JPH02165880 A JP H02165880A
Authority
JP
Japan
Prior art keywords
liquid crystal
laser
crystal cell
transmissive liquid
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP88316388A
Other languages
Japanese (ja)
Other versions
JP2644865B2 (en
Inventor
Makoto Yano
眞 矢野
Koji Kuwabara
桑原 皓二
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP63316388A priority Critical patent/JP2644865B2/en
Publication of JPH02165880A publication Critical patent/JPH02165880A/en
Application granted granted Critical
Publication of JP2644865B2 publication Critical patent/JP2644865B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 〔産業上の利用分齋〕 本発明はパルスレーザを用いたワンショットレーザマー
カに係り、特に、マスキング手段として透過形液晶セル
を用いたレーザマーカに関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application] The present invention relates to a one-shot laser marker using a pulsed laser, and particularly to a laser marker using a transmission type liquid crystal cell as a masking means.

〔従来の技術〕[Conventional technology]

液晶セル使用温度の環境変化によるコントラスト変動を
防止する手段として、市販されている液晶デイスプレィ
では、液晶セルが実装されている回路基板上にサーミス
タを設置し、その抵抗変化により液晶デイスプレィ駆動
電圧を自動調整する手段が広〈実施されている。
As a means to prevent contrast fluctuations due to environmental changes in the temperature at which the liquid crystal cell is used, in commercially available liquid crystal displays, a thermistor is installed on the circuit board on which the liquid crystal cell is mounted, and the liquid crystal display drive voltage is automatically adjusted by changing the resistance of the thermistor. Measures for adjustment are widely implemented.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上記従来技術は、液晶セルと駆動回路系とがほぼ同一の
雰囲気温度にある状態について考えられたもので、一般
、デイスプレィは十分制御できる。
The above-mentioned conventional technology was designed for a state in which the liquid crystal cell and the drive circuit system are at approximately the same ambient temperature, and the display can generally be sufficiently controlled.

しかし、マスキング手段として液晶セルを用いる方式で
は、照射するレーザの条件により、液晶セル内部と駆動
回路系との間に10〜30℃の温度差を生じるため、従
来技術は適応できず、コン1〜ラストむらの原因となる
However, in the method of using a liquid crystal cell as a masking means, a temperature difference of 10 to 30 degrees Celsius occurs between the inside of the liquid crystal cell and the drive circuit system depending on the conditions of the irradiated laser, so the conventional technology cannot be applied, and the controller ~Causes unevenness at the end.

また、多品種少量生産を考えると、レーザ条件出しに際
し、それぞれ、液晶セル駆動系の最適化を図らねばなら
ず、時間がかかるという問題があった。
In addition, when considering high-mix, low-volume production, it is necessary to optimize each liquid crystal cell drive system when determining laser conditions, which poses a problem in that it takes time.

本発明の目的は、レーザ照射条件によらず、鮮明に刻印
できるレーザマーカを提供することにある。
An object of the present invention is to provide a laser marker that can be clearly marked regardless of laser irradiation conditions.

〔課題を解決するための手段〕[Means to solve the problem]

上記目的は、レーザ照射条件をもとに予め液晶セル内部
の温度を予測し、この予測温度に対して最適な液晶セル
駆動電圧を設定することにより達成される。
The above object is achieved by predicting the temperature inside the liquid crystal cell in advance based on laser irradiation conditions and setting the optimum liquid crystal cell drive voltage for this predicted temperature.

〔作用〕[Effect]

液晶セルへのレーザ照射面積、照射レーザエネルギ、レ
ーザ繰返し数などのレーザ照射条件とレーザ照射面の液
晶温度より、マーキング実施時に液晶が経験し得る温度
を予め推定する。一方、液晶温度に対する動特性は制御
系でデータベースとして記録しておき、先の液晶温度に
おける最適動作点(駆動電圧)を設定する。
The temperature that the liquid crystal may experience during marking is estimated in advance from the laser irradiation conditions such as the area of laser irradiation on the liquid crystal cell, the irradiation laser energy, and the number of laser repetitions, and the liquid crystal temperature of the laser irradiation surface. On the other hand, the dynamic characteristics with respect to the liquid crystal temperature are recorded as a database in the control system, and the optimum operating point (driving voltage) at the previous liquid crystal temperature is set.

これによって、レーザの照射条件に基づく液晶温度変化
に影響されず、一定のコントラストで刻印することがで
きる6 〔実施例〕 以下、本発明の一実施例を第1図により説明する。−は
可視から近赤外までの波長範囲のなかに発振波長をもつ
パルスレーザであり、YAGレーザに代表肖れる。パル
スレーザ1から射出される直線偏光レーザ光2(ここで
はP偏光とする。)は、ビーム拡大・整形部3を経て、
液晶セル4に照射される。液晶セル4は液晶駆動系5、
液晶制御系6により動作し、レーザ光2のエネルギによ
ってはレーザ照射時の発熱を逃がすための冷却機4i!
(図示せず。)が設けられている。
As a result, it is possible to perform marking with a constant contrast without being affected by changes in liquid crystal temperature based on laser irradiation conditions.6 [Embodiment] An embodiment of the present invention will be described below with reference to FIG. 1. - is a pulsed laser having an oscillation wavelength in the wavelength range from visible to near infrared, and is typically represented by a YAG laser. A linearly polarized laser beam 2 (here, P-polarized light) emitted from a pulse laser 1 passes through a beam expansion/shaping section 3.
The liquid crystal cell 4 is irradiated with light. The liquid crystal cell 4 includes a liquid crystal drive system 5,
It is operated by the liquid crystal control system 6, and depending on the energy of the laser beam 2, the cooling device 4i is used to release heat generated during laser irradiation!
(not shown) is provided.

液晶セル4を通過したレーザ光7は、ビームスプリッタ
8によって、刻印用パターン情報を反映したP偏光レー
ザ光9と、非刻印用パターン光10とに分離される。こ
のうち、P偏光レーザ光9は、集光レンズ光学系11に
より被加工面12に結像され、非刻印用パターン光10
は吸収体13に吸収される。
The laser beam 7 that has passed through the liquid crystal cell 4 is separated by a beam splitter 8 into a P-polarized laser beam 9 reflecting pattern information for marking and a pattern light 10 for non-marking. Of these, the P-polarized laser beam 9 is imaged on the surface to be processed 12 by the condenser lens optical system 11, and the non-engraving pattern beam 10
is absorbed by the absorber 13.

パルスレーザ1は電源系14と制御系15により動作し
、液晶制御系6とレーザ制御系15は中央制御系16に
よってコントロールされる。中央制御系16には液晶セ
ル4へのレーザ照射条件に対する液晶セル駆動特性につ
いてのデータベース17が接続されている。
The pulse laser 1 is operated by a power supply system 14 and a control system 15, and the liquid crystal control system 6 and the laser control system 15 are controlled by a central control system 16. Connected to the central control system 16 is a database 17 regarding liquid crystal cell drive characteristics with respect to laser irradiation conditions for the liquid crystal cell 4 .

以下、第2図から第6図を用いて動作を説明する。パル
スレーザを液晶セルに照射したとき、液晶温度がどのよ
うに変化するかを示したのが第2図である。横軸が時間
t、縦軸が温度Tである。
The operation will be explained below using FIGS. 2 to 6. FIG. 2 shows how the liquid crystal temperature changes when the liquid crystal cell is irradiated with a pulsed laser. The horizontal axis is time t, and the vertical axis is temperature T.

時刻t1よりレーザ照射を開始し、パルスレーザ照射時
に液晶は急激に温度上昇し、パルス休止期間で冷却され
、次のパルス照射時に、また、急激に温度上昇するとい
った、のこぎり刃状の温度特性を示し、次第に飽和温度
T1に近づいている。
Laser irradiation starts at time t1, and the temperature of the liquid crystal rises rapidly during pulsed laser irradiation, cools down during the pulse rest period, and then rises rapidly again during the next pulsed irradiation. The temperature is gradually approaching the saturation temperature T1.

飽和温度T1は1パルスのレーザエネルギ密度(J/a
J)に依存するTp、レーザエネルギ密度とパルス繰返
し数から決まる平均出力密度(W/d)に依存するTし
、レーザ照射以前の基準温度Toとに分けられ、液晶セ
ル内のレーザ損失がわかれば解析により求められる特性
である。
The saturation temperature T1 is determined by the laser energy density of one pulse (J/a
The laser loss inside the liquid crystal cell is divided into Tp which depends on J), T which depends on the average output density (W/d) determined from the laser energy density and pulse repetition rate, and the reference temperature To before laser irradiation. This is a characteristic found through analysis.

一方、液晶の電気光学特性とコントラスト比について第
3図を用いて説明する。同図横軸は駆動電圧V、縦軸は
液晶セルの透過率Pを示している。
On the other hand, the electro-optical characteristics and contrast ratio of liquid crystal will be explained using FIG. 3. The horizontal axis in the figure shows the driving voltage V, and the vertical axis shows the transmittance P of the liquid crystal cell.

特性Iはパターン形成部の特性であり、特性■がパター
ン非形成部の特性である。このような特性でのコントラ
スト比には、駆動電圧、例えば、vlにおけるパターン
非形成部の透過率に対するパターン形成部の透過率の比
として、一般的に。
Characteristic I is the characteristic of the pattern-formed area, and characteristic (2) is the characteristic of the pattern-free area. The contrast ratio with such characteristics is generally expressed as the ratio of the transmittance of the patterned part to the transmittance of the non-patterned part at the driving voltage, for example, vl.

液晶物性として、高温度になると弾性定数が小さくなり
、同一駆動電圧に対する透過率が増加することも良く知
られており、例えば、岡野光治・小林駿介共編:液晶一
応用編:培風館(昭61)によれば、第3図の特性Iは
温度上昇より第4図のように左側へ特性が移行するとさ
れている。図示していない特性■も特性■と同様に、左
側へ移行するため、駆動電圧■を一定に保ったまま、液
晶温度が上昇すると、コントラスト比は低下する。
It is well known that, as a physical property of liquid crystals, the elastic constant decreases as the temperature increases, and the transmittance for the same driving voltage increases. According to the above, characteristic I in FIG. 3 is said to shift to the left side as shown in FIG. 4 as the temperature rises. Similar to the characteristic (2), the characteristic (not shown) also shifts to the left, so if the liquid crystal temperature increases while the driving voltage (2) is kept constant, the contrast ratio decreases.

温度とコントラスト比との関係を第5図に示す。FIG. 5 shows the relationship between temperature and contrast ratio.

横軸が温度T、縦軸がコントラスト比にである。The horizontal axis is the temperature T, and the vertical axis is the contrast ratio.

同様に、丘益監皮がTel Ta、T4 と変わるとき
、コントラスト比Kを最大にするl立ヱ圧を求めてみる
と、それぞれV Z T V a * V 4 と電圧
を下げなければならないことがわかる。
Similarly, when the voltage changes to Tel Ta and T4, if we calculate the voltage that maximizes the contrast ratio K, we find that the voltage must be lowered to V Z TV a * V 4 respectively. .

液晶温度変化ΔTに対する最適駆動電圧変化ΔV/ΔT
は液晶材質にもよるが電圧実効値表示で−6〜−15m
 V / degとされている。液晶セルとしての実用
条件を考えると、1/64デユーテイ・駆動の場合で、
駆動電圧14Vとして電圧変化率は−40〜−102m
V/degになる。従って、3Qdegの温度変化を生
じれば、−1,2〜−3Vll動電圧を調整しなければ
ならない。
Optimal drive voltage change ΔV/ΔT for liquid crystal temperature change ΔT
Although it depends on the liquid crystal material, the voltage effective value display is -6 to -15 m.
V/deg. Considering the practical conditions as a liquid crystal cell, in the case of 1/64 duty drive,
The voltage change rate is -40 to -102m when the driving voltage is 14V.
It becomes V/deg. Therefore, if a temperature change of 3Qdeg occurs, the dynamic voltage of -1, 2 to -3Vll must be adjusted.

液晶セル4に使用する液晶材が選定されれば、そのΔV
/ΔTは決定され、それにより、第6図に示す特性は求
められる。この液晶温度に対する最適駆動電圧特性と第
2図に示した温度特性をデータベース17に記録させて
おけば、各レーザ照射条件により、中央制御系16によ
り液晶制御系6へ駆動電圧設定指令が出され、絶えず、
高コントランス比を得られる状態に制御できる。その後
、レーザ制御系15ヘレーザ発振指令が出され、刻印が
行なわれる。
Once the liquid crystal material used for the liquid crystal cell 4 is selected, its ΔV
/ΔT is determined, and thereby the characteristics shown in FIG. 6 are obtained. By recording the optimum drive voltage characteristics with respect to the liquid crystal temperature and the temperature characteristics shown in FIG. 2 in the database 17, the central control system 16 issues a drive voltage setting command to the liquid crystal control system 6 according to each laser irradiation condition. ,constantly,
It can be controlled to a state where a high contrast ratio can be obtained. Thereafter, a laser oscillation command is issued to the laser control system 15, and marking is performed.

本実施例によれば、レーザ照射条件がどのように変わろ
うとも、レーザ照射時の液晶温度上昇を予測し、液晶セ
ル駆動電圧を最適化することができる。
According to this embodiment, no matter how the laser irradiation conditions change, the liquid crystal temperature rise during laser irradiation can be predicted and the liquid crystal cell drive voltage can be optimized.

上記実施例ではレーザ照射時の温度上昇特性そのものを
データベース17に記録させていたが、指示されるレー
ザ照射条件により、中央制御系16内で演算を行なわせ
、温度上昇特性を求め、データベース17内の温度−駆
動電圧特性より。
In the above embodiment, the temperature rise characteristics themselves during laser irradiation are recorded in the database 17, but according to the instructed laser irradiation conditions, calculations are performed within the central control system 16 to determine the temperature rise characteristics, and the temperature rise characteristics are recorded in the database 17. From the temperature-driving voltage characteristics of

最適駆動電圧を求めるシーケンスとしてもその効果は変
わらない。
Even if the sequence is used to find the optimum drive voltage, the effect remains the same.

また、実施例によれば、被加工物へのレーザ照射条件出
しに際し、レーザ照射−条件に対し液晶セル駆動系の設
定が自動的に最適化させるのでレーザ条件出しの時間を
大幅に短縮することができる。
Further, according to the embodiment, when setting the laser irradiation conditions for the workpiece, the settings of the liquid crystal cell drive system are automatically optimized for the laser irradiation conditions, so the time for setting the laser conditions can be significantly shortened. Can be done.

〔発明の効果〕 本発明によれば、液晶の温度上昇に対して、常時、液晶
駆動電圧を最適化制御できるので、レーザ照射条件にか
かわらず、一定のコントラスト比が得られ、刻印品質安
定化の効果がある。
[Effects of the Invention] According to the present invention, the liquid crystal driving voltage can be constantly optimized and controlled in response to the temperature rise of the liquid crystal, so a constant contrast ratio can be obtained regardless of the laser irradiation conditions, and the marking quality can be stabilized. There is an effect.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例のブロック図、第2図は温度
上昇特性図、第3図は電気光学特性図、第4図は電気光
学特性の温度変化図、第5図はコントラスト比の温度依
存特性図、第6図は温度−コントラスト比−電圧特性図
である。 1・・・パルスレーザ、4・・・液晶セル、5・・・液
晶駆動系、6・・・液晶制御系、15・・・レーザ制御
系、16・・・中央制御系、17・・・データベース。 早 口 ネ の m−やt 帛 目 奉 口 第 目 弔 国
Figure 1 is a block diagram of an embodiment of the present invention, Figure 2 is a temperature rise characteristic diagram, Figure 3 is an electro-optical characteristic diagram, Figure 4 is a temperature change diagram of electro-optical characteristics, and Figure 5 is a contrast ratio diagram. FIG. 6 is a temperature-contrast ratio-voltage characteristic diagram. DESCRIPTION OF SYMBOLS 1... Pulse laser, 4... Liquid crystal cell, 5... Liquid crystal drive system, 6... Liquid crystal control system, 15... Laser control system, 16... Central control system, 17... database. Fast-talking m- and t

Claims (1)

【特許請求の範囲】 1、外部から刻印すべきマークのパターン情報を与えた
透過形液晶セルと、可視波長から近赤外波長までの波長
範囲にわたるレーザ光源から射出される直線偏光レーザ
光によつて、前記透過形液晶セルを照射する手段と、前
記透過形液晶セルを透過したレーザ光を被加工面上に結
像させる光学系とを含むレーザマーカにおいて、前記透
過形液晶セルの駆動電圧を、レーザ照射条件により最適
化制御する手段を設けたことを特徴とするレーザマーカ
。 2、特許請求の範囲第1項において、 前記レーザ照射条件として、少なくとも前記透過形液晶
セルへのレーザ照射面積、照射レーザエネルギ、レーザ
繰返し数を用い、前記透過形液晶セルの駆動電圧を最適
化制御することを特徴とするレーザマーカ。 3、特許請求の範囲第1項または第2項記載の前記駆動
電圧最適化制御は、前記レーザ照射条件による前記透過
形液晶セル内の液晶温度を予測し、前記液晶温度変化に
基づく動特性の変化に追従し、前記透過形液晶セルの駆
動電圧を設定することにより行なわれることを特徴とす
るレーザマーカ。
[Claims] 1. A transmissive liquid crystal cell to which pattern information of a mark to be engraved is given from the outside, and a linearly polarized laser beam emitted from a laser light source over a wavelength range from visible wavelengths to near-infrared wavelengths. In a laser marker including a means for irradiating the transmissive liquid crystal cell and an optical system that images the laser beam transmitted through the transmissive liquid crystal cell on a surface to be processed, the driving voltage of the transmissive liquid crystal cell is set to A laser marker characterized by being provided with a means for optimization control based on laser irradiation conditions. 2. In claim 1, the driving voltage of the transmissive liquid crystal cell is optimized by using at least the laser irradiation area, irradiation laser energy, and laser repetition rate on the transmissive liquid crystal cell as the laser irradiation conditions. A laser marker characterized by control. 3. The driving voltage optimization control according to claim 1 or 2 predicts the liquid crystal temperature in the transmissive liquid crystal cell according to the laser irradiation conditions, and adjusts the dynamic characteristics based on the liquid crystal temperature change. A laser marker characterized in that the laser marker is set by following changes and setting a drive voltage of the transmissive liquid crystal cell.
JP63316388A 1988-12-16 1988-12-16 Laser marker Expired - Lifetime JP2644865B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63316388A JP2644865B2 (en) 1988-12-16 1988-12-16 Laser marker

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63316388A JP2644865B2 (en) 1988-12-16 1988-12-16 Laser marker

Publications (2)

Publication Number Publication Date
JPH02165880A true JPH02165880A (en) 1990-06-26
JP2644865B2 JP2644865B2 (en) 1997-08-25

Family

ID=18076527

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63316388A Expired - Lifetime JP2644865B2 (en) 1988-12-16 1988-12-16 Laser marker

Country Status (1)

Country Link
JP (1) JP2644865B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331446A (en) * 1992-06-10 1994-07-19 Ag Technology Co., Ltd. Liquid crystal optical element and a laser projection apparatus using polymer dispersed liquid crystal
WO2004038775A1 (en) * 2002-10-22 2004-05-06 Samsung Electronics Co., Ltd. Method of polycyrstallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638888A (en) * 1979-09-07 1981-04-14 Hitachi Ltd Pattern forming method
JPS56115267A (en) * 1980-02-19 1981-09-10 Seiko Epson Corp Printer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5638888A (en) * 1979-09-07 1981-04-14 Hitachi Ltd Pattern forming method
JPS56115267A (en) * 1980-02-19 1981-09-10 Seiko Epson Corp Printer

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5331446A (en) * 1992-06-10 1994-07-19 Ag Technology Co., Ltd. Liquid crystal optical element and a laser projection apparatus using polymer dispersed liquid crystal
WO2004038775A1 (en) * 2002-10-22 2004-05-06 Samsung Electronics Co., Ltd. Method of polycyrstallization, method of manufacturing polysilicon thin film transistor, and laser irradiation device therefor
US8853590B2 (en) * 2002-10-22 2014-10-07 Samsung Display Co., Ltd. Device for irradiating a laser beam

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Publication number Publication date
JP2644865B2 (en) 1997-08-25

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