JPH0214611A - Transversal type signal processing element - Google Patents
Transversal type signal processing elementInfo
- Publication number
- JPH0214611A JPH0214611A JP16257988A JP16257988A JPH0214611A JP H0214611 A JPH0214611 A JP H0214611A JP 16257988 A JP16257988 A JP 16257988A JP 16257988 A JP16257988 A JP 16257988A JP H0214611 A JPH0214611 A JP H0214611A
- Authority
- JP
- Japan
- Prior art keywords
- modulation
- phase
- idt
- signal processing
- amplitude
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000012545 processing Methods 0.000 title claims description 8
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 230000001902 propagating effect Effects 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract 1
- 230000000644 propagated effect Effects 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 9
- 238000013461 design Methods 0.000 description 2
- 230000010363 phase shift Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 101100277835 Caulobacter vibrioides (strain ATCC 19089 / CB15) divL gene Proteins 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
本発明はトランスバーサル型信号処理素子に関し、特に
信号処理やセンサの分野におけるプレートモード超音波
を用いた振幅変調(AM)および位相変調(PM)素子
に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to transversal signal processing elements, and in particular to amplitude modulation (AM) and phase modulation (PM) using plate mode ultrasonic waves in the field of signal processing and sensors. ) Regarding elements.
(従来の技術)
現在、弾性表面波(以下、SAWと略す)に代表、され
るElectro−mechanical (以下、E
Mと略す)部品は、小型で高機能であるところからフィ
ルタ、共振器を始めとする純電子回路要素と置換されつ
つある。(Prior Art) At present, electro-mechanical (hereinafter referred to as E
Components (abbreviated as M) are being replaced by pure electronic circuit elements such as filters and resonators because they are small and highly functional.
(発明が解決しようとする課題)
本発明は信号処理やセンサの分野で注目されているプレ
ートモード超音波を用いて振幅変調(AM)及び位相変
調(PM)を実現することを目的とする。(Problems to be Solved by the Invention) An object of the present invention is to realize amplitude modulation (AM) and phase modulation (PM) using plate mode ultrasonic waves, which are attracting attention in the fields of signal processing and sensors.
(課題を解決するための手段)
本発明はこの目的を達成するために、圧電基板の中央部
に配設された変調用のすだれ状トランスデユーサと、圧
電基板の左右端であって変調用のすだれ状トランスデユ
ーサを挟む如く位置に配設された搬送波入出力用のすだ
れ状トランスデユーサと、変調用のすだれ状トランスデ
ユーサに接続されている終端抵抗とを設けたことに特徴
がある。(Means for Solving the Problems) In order to achieve this object, the present invention includes a transducer for modulation disposed in the center of a piezoelectric substrate, and a transducer for modulation disposed at the left and right ends of the piezoelectric substrate. The present invention is characterized by the provision of interdigital transducers for carrier wave input/output placed on both sides of the interdigital transducer, and a terminating resistor connected to the interdigital transducer for modulation. be.
(作用)
以上のような構成を有する本発明によれば、終端抵抗を
変化させて、前記変調用のすだれ状トランスデユーサを
介した搬送波入出力用のすだれ状トランスデユーサ間を
伝搬する音響波の通過特性を変化させることができる。(Function) According to the present invention having the above configuration, the terminating resistor is changed to reduce the sound propagating between the interdigital transducers for carrier wave input and output via the interdigital transducer for modulation. Wave passing characteristics can be changed.
特に、音響波の位相をほぼ一定に、振幅を静的に変化さ
せるごとく終端抵抗を設定してAM変調を行なう。また
、音響波の振幅をほぼ一定に、位相を静的に変化させる
ごとく終端抵抗を設定してPM変調を行なう。In particular, AM modulation is performed by setting a terminating resistor so that the phase of the acoustic wave is substantially constant and the amplitude is statically varied. Furthermore, PM modulation is performed by setting a terminating resistor so that the amplitude of the acoustic wave is approximately constant and the phase is statically changed.
従って、本発明は前記目的を達成でき、プレートモード
超音波を用いて振幅変調(AM)及び位相変調(PM)
を実現できる。Therefore, the present invention can achieve the above object, and utilize plate mode ultrasound to perform amplitude modulation (AM) and phase modulation (PM).
can be realized.
(実施例) 以下、本発明の一実施例を図面に基づいて説明する。(Example) Hereinafter, one embodiment of the present invention will be described based on the drawings.
第1図は本発明の一実施例におけるデバイスの平面図で
ある。同図において、圧電基板1の左右端に搬送波入出
力用のすだれ状トランスデユーサ(以下、IDTと略す
)2,3があり、中央部に変調用のIDT 4が配!さ
れている。また、変調用のIDT 4に接続されている
終端抵抗5を変化させると、音響波の通過特性を変化さ
せることができる。FIG. 1 is a plan view of a device in one embodiment of the invention. In the figure, there are interdigital transducers (hereinafter abbreviated as IDT) 2 and 3 for carrier wave input/output at the left and right ends of a piezoelectric substrate 1, and an IDT 4 for modulation is arranged in the center! has been done. Further, by changing the terminating resistor 5 connected to the IDT 4 for modulation, the acoustic wave passage characteristics can be changed.
この動作はSm1thらのcrossed−field
モデルを用いて、理論的に計算することが可能である。This operation is similar to the crossed-field method of Sm1th et al.
It is possible to calculate theoretically using a model.
約I MHzで動作する変調素子の設計には次の変数と
定数を設定して実現する。ここで、1対当りのIDT容
量: Cs□40pF、 IDTの対数: N=4.自
由面速度: vo=2212 m/s、金属膜下速度:
v、=1683m/s、 電極指間隙: ’2 g
” 0.46 mm、電極指幅:(1,= Q、54
mm、入出力IDT対数:8.とすると、IDTの中心
周波数f0は次式で表すことができる。The design of a modulation element operating at about I MHz is achieved by setting the following variables and constants. Here, IDT capacitance per pair: Cs□40pF, logarithm of IDT: N=4. Free surface velocity: vo=2212 m/s, velocity under metal film:
v, = 1683 m/s, electrode finger gap: '2 g
”0.46 mm, electrode finger width: (1,=Q,54
mm, input/output IDT logarithm: 8. Then, the center frequency f0 of the IDT can be expressed by the following equation.
fo= (x、 /V6+ 12+m /V+s) −
172= 945.5 kHz電気抵抗”R”によって
終端されたIDTがAM、及びPM用素子としていかに
動作するかを評価するために、周波数と終端抵抗をバラ
メークとする形で、二つの音響端の間の複素伝達特性T
(f、 R)を求めた結果が第2図である。短絡状態
では全周波数に亙って振幅は平坦で、位相は直線的に変
化するが、抵抗値が太き(なると中心周波数よりも高周
波側に減衰域が現われる。 10QOkHzには位相が
変化しないnul1点が存在し、その点を境に低周波側
では進み位相に、高周波側では遅相領域になる。また、
進相領域では、100〜1にΩの抵抗値の変化に対して
約30″の移相が起こる。従って、nul 1点の周波
数で動作させるとAM変調が、周波数900kHzの周
辺ではPM変調が可能である。なお、実験に用いた圧電
セラミック(NEPECN−10)は45X 8 X
O,15mmの大きさの横方向分極基板で、5haer
Horizontal(SH)波が励振される。 第
3図は変調用のIDT部での通過特性の終端抵抗依存性
を示す図であるが、同図かられかるように位相、振幅共
に計算値とよ(一致している。ただし、位相は0Ωのと
きを基準とした相対値で表示している。振幅は終端条件
が開放性になるにつれて減衰するが、位相には殆ど変化
がな(,200〜1にΩの抵抗変化を用いるとAM変調
が可能である。fo= (x, /V6+ 12+m /V+s) −
172 = 945.5 kHz In order to evaluate how the IDT terminated with electrical resistance "R" operates as an AM and PM element, we tested two acoustic terminals with different frequencies and termination resistances. The complex transfer characteristic T between
Figure 2 shows the results of (f, R). In a short-circuit state, the amplitude is flat over all frequencies, and the phase changes linearly, but the resistance value is large (as a result, an attenuation region appears on the higher frequency side than the center frequency. At 10QOkHz, the phase does not change.null1 There is a point, and from that point, the low frequency side becomes an advanced phase region, and the high frequency side becomes a slow phase region.Also,
In the phase advance region, a phase shift of about 30'' occurs for a change in the resistance value of Ω from 100 to 1. Therefore, when operating at the frequency of one null point, AM modulation occurs, and around a frequency of 900 kHz, PM modulation occurs. It is possible.The piezoelectric ceramic (NEPECN-10) used in the experiment is 45X 8X
O, 15mm size horizontally polarized substrate, 5haer
Horizontal (SH) waves are excited. Figure 3 is a diagram showing the dependence of the pass characteristics in the IDT section for modulation on the terminating resistance. It is expressed as a relative value with respect to 0Ω.The amplitude attenuates as the termination condition becomes open, but there is almost no change in the phase. Modulation is possible.
第4図はJ−FET (2SK117−Y)を可変抵抗
素子として、音響的にAM変調を行った場合の観測波形
を示す図である。同図の上段は1OkHzの変調信号(
0、IV/divL下段はAM変調を受けた搬送波〔5
fflV/div)で、変調指数はm = 33.3%
(AMIである。FIG. 4 is a diagram showing observed waveforms when acoustic AM modulation is performed using a J-FET (2SK117-Y) as a variable resistance element. The upper part of the figure shows a 1OkHz modulation signal (
0, IV/divL lower stage is AM modulated carrier wave [5
fflV/div), and the modulation index is m = 33.3%
(It is AMI.
PM変調可能な周波数は800〜970kHzであるが
、振幅変化が少ない862kHzでの通過特性が第5図
である。同図かられかるように、200〜lkΩの範囲
では振幅変化が殆どない状態で、約30°の位相偏移が
得られた。The frequency that can be modulated by PM is 800 to 970 kHz, and FIG. 5 shows the pass characteristic at 862 kHz, where the amplitude change is small. As can be seen from the figure, in the range of 200 to lkΩ, a phase shift of about 30° was obtained with almost no amplitude change.
第6図は1OKHzの変調信号によるPM変調の結果を
示す図で、±11°偏移した搬送波から、m=0.19
(PM)が求められる。Figure 6 is a diagram showing the result of PM modulation using a 1OKHz modulation signal, where m = 0.19 from a carrier wave shifted by ±11°.
(PM) is required.
(発明の効果)
以上説明したように本発明によれば、すだれ状トランス
デユーサをアナログ変調素子に用いるために、Sm1t
hらの等化回路を用いて求めた理論結果から明らかなよ
うにプレートモード超音波を用いて振幅変調(AM)及
び位相変調(PM)を実現することができた。これらの
結果は信号処理分野に進行波型超音波素子を導入する際
に設計指針を与えるものとして有効である。(Effects of the Invention) As explained above, according to the present invention, in order to use a blind transducer as an analog modulation element, Sm1t
As is clear from the theoretical results obtained using the equalization circuit of H et al., amplitude modulation (AM) and phase modulation (PM) could be realized using plate mode ultrasound. These results are effective in providing design guidelines when introducing traveling wave ultrasonic devices into the field of signal processing.
第1図は本発明の一実施例を示す平面図、第2図は本実
施例における変調用のIDTの周波数特性を示す図、第
3図は本実施例に於けるAM素子の通過特性の抵抗依存
性を示す図、第4図は本実施例におけるAM変調された
信号の観測波形を示す図、第5図は本実施例におけるP
M素子の通過特性の抵抗依存性を示す図、第6図は本実
施例におけるPM変調された信号の観測波形を示す図で
あ1・・・圧電基板、
2.3・・・撤送波入出力用のIDT、4・・・変調用
のIDT、
5・・・終端抵抗。FIG. 1 is a plan view showing an embodiment of the present invention, FIG. 2 is a diagram showing the frequency characteristics of the IDT for modulation in this embodiment, and FIG. 3 is a diagram showing the pass characteristics of the AM element in this embodiment. FIG. 4 is a diagram showing the observed waveform of the AM modulated signal in this example, and FIG. 5 is a diagram showing the resistance dependence in this example.
FIG. 6 is a diagram showing the resistance dependence of the pass characteristics of the M element, and a diagram showing the observed waveform of the PM-modulated signal in this example. 1...Piezoelectric substrate 2.3... Withdrawal wave IDT for input/output, 4... IDT for modulation, 5... Termination resistor.
Claims (3)
トランスデューサと、 前記圧電基板の左右端であって、前記変調用のすだれ状
トランスデューサを挟む如く位置に配設された搬送波入
出力用のすだれ状トランスデューサと、 前記変調用のすだれ状トランスデューサに接続されてい
る終端抵抗とを設け、 該終端抵抗を変化させて、前記変調用のすだれ状トラン
スデューサを介した搬送波入出力用のすだれ状トランス
デューサ間を伝搬する音響波の通過特性を変化させるこ
とを特徴とするトランスバーサル型信号処理素子。(1) A modulating interdigital transducer disposed in the center of the piezoelectric substrate, and carrier wave input/output disposed at the left and right ends of the piezoelectric substrate so as to sandwich the modulating interdigital transducer. and a terminating resistor connected to the modulating interdigital transducer, the terminating resistor being varied to create a transducer for carrier wave input/output via the modulating interdigital transducer. A transversal signal processing element characterized by changing the passage characteristics of acoustic waves propagating between transducers.
るごとく前記終端抵抗を設定することを特徴とする請求
項1記載のトランスバーサル型信号処理素子。(2) The transversal type signal processing element according to claim 1, wherein the terminating resistor is set so that the phase of the acoustic wave is substantially constant and the amplitude is varied.
るごとく前記終端抵抗を設定することを特徴とする請求
項1記載のトランスバーサル型信号処理素子。(3) The transversal type signal processing element according to claim 1, wherein the terminating resistor is set so that the amplitude of the acoustic wave is substantially constant and the phase thereof is varied.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16257988A JPH0214611A (en) | 1988-07-01 | 1988-07-01 | Transversal type signal processing element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16257988A JPH0214611A (en) | 1988-07-01 | 1988-07-01 | Transversal type signal processing element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0214611A true JPH0214611A (en) | 1990-01-18 |
Family
ID=15757270
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16257988A Pending JPH0214611A (en) | 1988-07-01 | 1988-07-01 | Transversal type signal processing element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0214611A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007202171A (en) * | 1996-10-02 | 2007-08-09 | Nokia Corp | Device incorporating a tunable thin film bulk acoustic resonator for amplitude and phase modulation |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972804A (en) * | 1982-10-20 | 1984-04-24 | Matsushita Electric Ind Co Ltd | Surface acoustic wave element |
| JPS60180318A (en) * | 1984-02-28 | 1985-09-14 | Japan Radio Co Ltd | Surface acoustic wave filter |
-
1988
- 1988-07-01 JP JP16257988A patent/JPH0214611A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5972804A (en) * | 1982-10-20 | 1984-04-24 | Matsushita Electric Ind Co Ltd | Surface acoustic wave element |
| JPS60180318A (en) * | 1984-02-28 | 1985-09-14 | Japan Radio Co Ltd | Surface acoustic wave filter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007202171A (en) * | 1996-10-02 | 2007-08-09 | Nokia Corp | Device incorporating a tunable thin film bulk acoustic resonator for amplitude and phase modulation |
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