JPH02137126A - Method for manufacturing magnetic recording media - Google Patents
Method for manufacturing magnetic recording mediaInfo
- Publication number
- JPH02137126A JPH02137126A JP63291170A JP29117088A JPH02137126A JP H02137126 A JPH02137126 A JP H02137126A JP 63291170 A JP63291170 A JP 63291170A JP 29117088 A JP29117088 A JP 29117088A JP H02137126 A JPH02137126 A JP H02137126A
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- alloy
- film
- magnetic recording
- rod
- shaped
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Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は高密度記録特性の優れた長尺の磁気記録媒体を
長尺にわたって一定組成で作製するための製造方法に関
する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a manufacturing method for producing a long magnetic recording medium having excellent high-density recording characteristics and having a constant composition over a long length.
従来の技術
短波長記録特性の優れた磁気記録方式として垂直磁気記
録方式がある。この方式において使用される磁気記録媒
体の磁性層は、垂直磁気異方性を有することが必要であ
る。垂直磁気記録媒体に信号を記録すると残留磁化は媒
体の膜面の垂直方向を向き易く、短波長になる程媒体内
反磁界は減少する。その結果、短波長領域において高い
再生出力が得られる。2. Description of the Related Art A perpendicular magnetic recording system is known as a magnetic recording system with excellent short wavelength recording characteristics. The magnetic layer of the magnetic recording medium used in this method needs to have perpendicular magnetic anisotropy. When a signal is recorded on a perpendicular magnetic recording medium, residual magnetization tends to be oriented perpendicular to the film surface of the medium, and the demagnetizing field within the medium decreases as the wavelength becomes shorter. As a result, high reproduction output can be obtained in the short wavelength region.
垂直磁気記録媒体用磁性層としては、Co基合金薄膜が
多く検討されている。その中でも特に、CoとCrある
いはCoとNiとCrを主成分とする合金薄膜が、優れ
た記録再生特性及び耐食性のゆえに最も注目を集めてい
る。Many Co-based alloy thin films have been studied as magnetic layers for perpendicular magnetic recording media. Among these, alloy thin films mainly composed of Co and Cr or Co, Ni, and Cr are attracting the most attention because of their excellent recording and reproducing characteristics and corrosion resistance.
Co−CrあるいはCo−Ni−Crf主成分とする合
金薄膜は一般に真空蒸着法あるいはスパッタ法により作
製される。真空蒸着法とスパッタ法を比較すると、前者
は後者に対して、100倍以上高い膜堆積速度で成膜で
きるために、量産においては前者が極めて有利である。Co--Cr or Co--Ni--Crf alloy thin films are generally produced by vacuum evaporation or sputtering. Comparing the vacuum evaporation method and the sputtering method, the former can form a film at a film deposition rate that is 100 times or more higher than the latter, so the former is extremely advantageous in mass production.
なお真空蒸着法においては、Co、Ni、CIは高融点
金属であるために、蒸発源としては電子ビーム蒸発源を
用いる必要がある。In the vacuum evaporation method, since Co, Ni, and CI are high melting point metals, it is necessary to use an electron beam evaporation source as the evaporation source.
しかし、CoとCIの蒸気圧が大幅に異なるために、真
空蒸着法で長尺に一定組成のCo−CrあるいはCo−
Ni−Crを主成分とする合金薄膜を作製することは困
難である。なお、Niの蒸気圧はC。However, since the vapor pressures of Co and CI are significantly different, the vacuum evaporation method is used to deposit Co-Cr or Co-Cr with a constant composition over a long length.
It is difficult to produce an alloy thin film containing Ni-Cr as a main component. Note that the vapor pressure of Ni is C.
とほぼ等しいので、Niの組成制御は容易でおる。Since it is almost equal to , it is easy to control the composition of Ni.
CoとCrを同一の蒸発源から蒸発させて、移動しつつ
ある長尺の基板上に連続的にCo−Cr膜を蒸着すると
、第2図に示すように蒸着初期においてはCrを多く含
んだCo−Cr膜が形成され、蒸着終期にはCrをあま
シ含まないCo−Cr膜が形成される。Co−Cr膜に
おいて、膜の組成が異なると磁気特性も変化するので、
これでは量産が困難である。When Co and Cr are evaporated from the same evaporation source and a Co-Cr film is continuously deposited on a moving long substrate, the film contains a large amount of Cr in the initial stage of deposition, as shown in Figure 2. A Co--Cr film is formed, and at the end of the deposition, a Co--Cr film that does not contain much Cr is formed. In a Co-Cr film, the magnetic properties change if the film composition changes, so
This makes mass production difficult.
上記問題点は、粒状Crを蒸発物質の溶湯中に供給しつ
つ蒸着を行うことにより解決出来る。この方法について
第3図及び第4図を用いて以下に説明する。The above problem can be solved by performing vapor deposition while supplying granular Cr into the molten metal of the vaporized substance. This method will be explained below using FIGS. 3 and 4.
第3図に基板を走行させつつ蒸着を行う真空蒸着装置内
部の一例の概略図を示す。1は高分子基板であシ、円筒
状キャン2の周面に沿って走行する。FIG. 3 shows a schematic diagram of an example of the inside of a vacuum evaporation apparatus that performs evaporation while moving a substrate. 1 is a polymer substrate and runs along the circumferential surface of the cylindrical can 2.
蒸発物質の溶湯7が電子ビーム蒸発源のるつぼ6の中に
入っている。なお蒸発物質はC0−Cr、あるいはCo
−Ni−Cr合金である。蒸発したCo。A molten metal 7 of evaporated material is contained in a crucible 6 of an electron beam evaporation source. The evaporated substance is C0-Cr or Co
-Ni-Cr alloy. Evaporated Co.
Cr、Ni原子は円筒キャン2の周面上を移動しつつあ
る高分子基板1に付着し、Co−Cr膜あるいはCo−
Ni−Cr膜が形成される。3,4は高分子基板1を巻
くボビンである。6は不要な原子が高分子基板1に付着
するのを防止するための遮へい板である。12は粒状C
r14を供給するだめの装置である。なお粒状Crのか
わシに粒状Co −Crあるいは粒状Co−Ni−Cr
を用いてもさしつかえない。Cr粒状14はCr供給賂
13に添って蒸発物質の溶湯7に入る。この様にCI供
給装置12に゛よシCr粒を、量を制御して蒸発物質の
溶湯7内に供給しつつ膜を作製すると、長尺に組成一定
のCo−0r膜が得られる。第4図にCI粒を供給しつ
つ蒸着を行った場合の、膜組成の蒸着時間依存性を示す
。第4図よシ、時間が経過しても第2図の様な組成変動
はなく、組成がほぼ一定になっていることがわかる。Cr and Ni atoms adhere to the polymer substrate 1 that is moving on the circumferential surface of the cylindrical can 2, forming a Co-Cr film or a Co-
A Ni-Cr film is formed. 3 and 4 are bobbins around which the polymer substrate 1 is wound. 6 is a shielding plate for preventing unnecessary atoms from adhering to the polymer substrate 1. 12 is granular C
This is a device that supplies r14. In addition to granular Cr, granular Co-Cr or granular Co-Ni-Cr
It is okay to use. The Cr granules 14 enter the molten metal 7 of the vaporized substance along with the Cr feed 13. When a film is produced while supplying Cr grains into the molten metal 7 of the evaporated substance in a controlled amount using the CI supply device 12 in this manner, a long Co-Or film having a constant composition can be obtained. FIG. 4 shows the dependence of the film composition on the deposition time when deposition was performed while supplying CI grains. As shown in FIG. 4, there is no change in the composition as shown in FIG. 2 even with the passage of time, and it can be seen that the composition remains almost constant.
発明が解決しようとする課題
以上の如く、CI粒を溶湯中に供給しつつCo −Cr
膜あるいはCo−Ni−Cr膜を蒸着すると、長尺にわ
たって一定組成の膜を作製出来るが、供給中にスプラッ
シュが発生するという問題が明らかになった。ここでス
プラッシュとは、高温になっている溶湯から飛び出す直
径数10μm以下の合金粒のことである。スプラッシュ
は電子ビーム蒸発源では溶湯中において電子ビームの照
射されている部分の温度がかなシ高く、一般に、沸騰状
態にある溶湯から発生し易い。特に沸騰状態にある溶湯
中にCI粒等の固体を投入する場合に、供給されたCr
粒表面の酸化皮膜の酸素が解離し極めて発生し易い。ス
プラッシュが発生すると、それが基板上に付着する。ス
プラッシュの付着している磁気記録媒体に信号を記録す
ると、スプラッシュの部分において媒体と磁気ヘッドと
の接触が不充分になり信号が欠除してしまう。従って、
溶湯中へのCr籾粒供給時スプラッシュの発生は好まし
くない。Problems to be Solved by the Invention As described above, while supplying CI grains into the molten metal, Co -Cr
When a film or a Co-Ni-Cr film is vapor-deposited, a film having a constant composition can be produced over a long length, but it has become clear that a problem arises in that splashes occur during supply. Here, the splash refers to alloy grains with a diameter of several tens of micrometers or less that fly out from the hot molten metal. In an electron beam evaporation source, the temperature of the part of the molten metal that is irradiated with the electron beam is very high, and splash is generally likely to occur from the molten metal that is in a boiling state. In particular, when solids such as CI particles are added to the molten metal in a boiling state, the supplied Cr
Oxygen in the oxide film on the grain surface dissociates and is extremely likely to be generated. When a splash occurs, it is deposited on the substrate. When a signal is recorded on a magnetic recording medium with splashes attached, the contact between the medium and the magnetic head becomes insufficient at the splash portion, resulting in signal loss. Therefore,
It is undesirable for splash to occur when Cr grains are supplied into the molten metal.
課題を解決するための手段
上記の問題を解決するための本発明は、電子ビーム蒸発
源を用いた真空蒸着法によりCoとCrあるいはCoと
NiとCrを主成分とする合金を磁性層として移動しつ
つある基板上に連続的形成する磁気記録媒体の製造方法
において、棒状あるいは線状のCo−CrあるいはCo
−Ni−Cr合金をその表面をエツチングした後に蒸発
物質の溶湯中に供給しつつ蒸着を行うことを特徴とし、
望ましくは前記エツチングを製膜時にイオン銃を用いて
行うことを特徴とする。Means for Solving the Problems The present invention solves the above problems by transferring Co and Cr or an alloy mainly composed of Co, Ni, and Cr as a magnetic layer by a vacuum evaporation method using an electron beam evaporation source. In the manufacturing method of magnetic recording media that is continuously formed on a substrate, rod-shaped or linear Co-Cr or Co
- characterized by performing vapor deposition while supplying the Ni-Cr alloy into the molten metal of the evaporated substance after etching the surface thereof,
Preferably, the etching is performed using an ion gun during film formation.
作 用
本発明によれば、蒸発物質の溶湯中に供給されるCo−
ClあるいはCo−Ni−Cr合金はめらかじめエツチ
ングされ、その表面の酸化皮膜が除去されているので、
スプラッシュが発生することがない。粒状Crの表面を
エツチングすることは困難であるが、本発明のごとく、
棒状あるいは線状のCr合金であれば容易にエツチング
ができる。そして、蒸着時におけるスプラッシュの発生
がないため、信号欠除のほとんどない高密度磁気記録媒
体が得られることになる。Function According to the present invention, the Co-
Cl or Co-Ni-Cr alloy is etched smoothly and the oxide film on its surface is removed.
No splash occurs. Although it is difficult to etch the surface of granular Cr, as in the present invention,
A rod-shaped or linear Cr alloy can be easily etched. Since no splash occurs during vapor deposition, a high-density magnetic recording medium with almost no signal loss can be obtained.
実施例
以下、本発明の製造方法を具体的な実施例に基づいて説
明する。EXAMPLES Hereinafter, the manufacturing method of the present invention will be explained based on specific examples.
第1図に示される構成の空真蒸着装置を用いて垂直磁気
記録媒体を作製した。高分子基板1としては、膜厚8μ
mのポリイミドフィルムを使用した。円筒状キャン2の
直径は6oαであシ、周面の温度を260℃とした。電
子ビーム蒸発源の電子銃(図示せず)は加速電圧30
KVのピアス型直進銃を用いた。るつぼeとしてはマグ
ネジするつぼを使用し、この中にCo−Cr合金を充填
した。A perpendicular magnetic recording medium was manufactured using a vacuum evaporation apparatus having the configuration shown in FIG. The polymer substrate 1 has a film thickness of 8 μm.
m polyimide film was used. The diameter of the cylindrical can 2 was 6oα, and the temperature of the circumferential surface was 260°C. The electron gun (not shown) of the electron beam evaporation source has an accelerating voltage of 30
A KV pierce-type straight gun was used. A magnetic screw crucible was used as the crucible e, and the Co--Cr alloy was filled in the crucible.
高分子基板1と蒸発物質の溶湯7表面の距離は26αと
した。膜堆積速度を1μm/秒、高分子基板の走行速度
を24m/分として、膜厚Q25μmの前記基板1上に
C!o−Cr膜を形成した。8は蒸発物質の溶湯7に供
給される棒状Cr合金である。The distance between the polymer substrate 1 and the surface of the molten metal 7 of the evaporated substance was set to 26α. With a film deposition rate of 1 μm/sec and a polymer substrate traveling speed of 24 m/min, C! An o-Cr film was formed. 8 is a rod-shaped Cr alloy supplied to the molten metal 7 of the evaporated substance.
この棒状Cr合金8の組成は、供給量、供給速度。The composition of this rod-shaped Cr alloy 8 is determined by the amount and rate of supply.
蒸発物質の量、膜堆積速度等に対応して調整する。Adjust according to the amount of evaporated substances, film deposition rate, etc.
本実験においては棒状Cr合金8として直径2゜nでC
r含有量が27重量%のCo−Cr合金を使用した。な
お蒸発物質がCo−Ni−Cx合金の場合には、棒状C
o−Ni−Cr合金を使用すればよい。In this experiment, a rod-shaped Cr alloy 8 was used with a diameter of 2゜n.
A Co-Cr alloy with an r content of 27% by weight was used. In addition, when the evaporated substance is Co-Ni-Cx alloy, rod-shaped C
An o-Ni-Cr alloy may be used.
9は棒状Cr合金8を蒸発物質の溶湯中に供給するため
の供給装置である。この供給装置は棒状Cr合金8を矢
印Bの様に回転させながら、矢印Aの方向に送る。11
はイオン銃1oから発生され、棒状Cr合金8に照射し
て、その表面をエラチンではな(Xe等のイオンでも差
しつかえない。また、イオン銃10に装備されているニ
ュートラライザ−は使用してもしなくても変わシはない
。本実験においては、グリッド径が3c11のカウフマ
ン型イオン銃を使用し、イオンの加速電圧を1.sKV
。Reference numeral 9 denotes a feeding device for feeding the rod-shaped Cr alloy 8 into the molten metal of the evaporated substance. This feeding device feeds the rod-shaped Cr alloy 8 in the direction of arrow A while rotating it in the direction of arrow B. 11
is generated from the ion gun 1o, and irradiates the rod-shaped Cr alloy 8 to coat its surface with ions other than elatin (Xe and other ions may also be used. In addition, the neutralizer equipped in the ion gun 10 is not used There is no difference even if it is not used.In this experiment, a Kaufmann type ion gun with a grid diameter of 3c11 was used, and the ion acceleration voltage was set to 1.sKV.
.
イオン電流密度を2 mA/dとした。また棒状Cr合
金8の送り速度は3α/分とした。なお、蒸発物質の溶
湯7の湯面上において、電子ビームの照射位置と棒状C
r合金供給位置の最短距離は61とした。The ion current density was 2 mA/d. Further, the feed rate of the rod-shaped Cr alloy 8 was set to 3α/min. In addition, on the surface of the molten metal 7 of the evaporated substance, the irradiation position of the electron beam and the rod-shaped C
The shortest distance of the r-alloy supply position was set to 61.
以上の条件のもとでCo−0r膜を高分子基板1上に蒸
着し、形成された膜表面のスプラッシュの数を調べた。A Co-Or film was deposited on the polymer substrate 1 under the above conditions, and the number of splashes on the surface of the formed film was examined.
その結果を表に示す。同表には、イオン銃を使用しない
以外は上記と全く同条件で作製した膜、及び第3図に示
す従来法で作製した膜についての結果も示す。なおスプ
ラッシュは、光学顕微鏡及び走査型電子顕微鏡により観
察した。The results are shown in the table. The same table also shows the results for the membranes produced under the same conditions as above except that no ion gun was used, and the membranes produced by the conventional method shown in FIG. Note that the splash was observed using an optical microscope and a scanning electron microscope.
表
表から明らかな様に、従来法では極めて多数のスプラッ
シュが高分子基板上に付着するために、信号の欠除が多
すぎ、磁気記録媒体としての使用は不可能である。又、
01粒供給のかわりに棒状Cr合金を供給しても、イオ
ン銃を使用しない場合では、まだ多くのスプラッシュが
存在し磁気記録媒体として使用できない。これらの方法
に対し本発明の方法によれば、スプラッシュは全く認め
られず磁気記録媒体として使用可能となる。As is clear from the table, in the conventional method, an extremely large number of splashes adhere to the polymer substrate, resulting in too many signal deletions, making it impossible to use it as a magnetic recording medium. or,
Even if a rod-shaped Cr alloy is supplied instead of the 01 grains, there will still be a lot of splash, and it cannot be used as a magnetic recording medium unless an ion gun is used. In contrast to these methods, according to the method of the present invention, no splash is observed and it can be used as a magnetic recording medium.
以上の如く、本発明の方法によるとスプラッシュが殆ん
ど無くなる理由は、供給物質である棒状Cr合金の表面
の酸化皮膜がイオンビームによりエッチングされて除去
されるためだと考えられる。As described above, the reason why there is almost no splash according to the method of the present invention is thought to be that the oxide film on the surface of the rod-shaped Cr alloy, which is the supplied material, is etched and removed by the ion beam.
すなわち、供給物質である棒状Cr合金の表面に酸化皮
膜があると、供給物質が溶湯中に供給された時に、酸化
皮膜はすぐには溶解せずに電子ビームの照射部まで浮い
て行く。電子ビームがこの酸化物を照射する際に酸素が
解離しスプラッシュが生じる。これに対し、イオンビー
ムにより酸化皮膜をエツチングし除去した後に、供給物
質を蒸発源の溶湯中に供給すれば、スプラッシュの原因
がないのでスプラッシュは発生しない。That is, if there is an oxide film on the surface of the rod-shaped Cr alloy that is the feed substance, when the feed substance is fed into the molten metal, the oxide film does not dissolve immediately and floats to the part irradiated with the electron beam. When the electron beam hits this oxide, the oxygen dissociates, creating a splash. On the other hand, if the oxide film is etched and removed by an ion beam and then the material to be supplied is supplied into the molten metal of the evaporation source, no splash will occur because there is no cause for splash.
上記では、蒸着時に棒状Cr合金表面をイオン銃に:リ
エッチングする例について説明したが、蒸着前にイオン
銃あるいはプラズマによりエツチングし、その後に蒸着
を開始しても良い。また、王水等による湿式エツチング
を用いて供給物質である棒状Cr合金の表面酸化皮膜を
除去してもよい。ただし、上記実施例の如く蒸着時にイ
オン銃によりエツチングしつつ、棒状CI合金を供給す
る方法が酸化皮膜を完全に除去できるので最も優れた効
果が得られる。なお、供給物質の形状は、棒状ではなく
線状でも良い。しかし、粒状では表面酸化皮膜の除去が
困難であるために、スプラッシュの低減は期待できない
。In the above, an example has been described in which the rod-shaped Cr alloy surface is etched using an ion gun during vapor deposition, but etching may be performed using an ion gun or plasma before vapor deposition, and then vapor deposition may be started. Alternatively, the surface oxide film of the rod-shaped Cr alloy, which is the supplied material, may be removed by wet etching using aqua regia or the like. However, the method of supplying the rod-shaped CI alloy while etching it with an ion gun during vapor deposition as in the above embodiments can completely remove the oxide film and thus provide the best effect. Note that the shape of the supplied substance may be linear instead of rod-shaped. However, since it is difficult to remove the surface oxide film in the form of particles, no reduction in splash can be expected.
発明の効果
以上の説明の如く本発明の磁気記録媒体の製造方法によ
れば、蒸着時におけるスプラッシュの発生が極めて少な
いために、信号欠除の殆んどない高密度磁気記録媒体を
高い生産性で提供できる。Effects of the Invention As explained above, according to the method for manufacturing a magnetic recording medium of the present invention, since the occurrence of splash during vapor deposition is extremely small, high-density magnetic recording media with almost no signal loss can be produced with high productivity. can be provided.
第1図は本発明の製造方法の一例を説明するための真空
蒸着装置内部の概略図、第2図はCrあるいはCI合金
を供給せずに長尺のCo−Cr膜を作製した場合の蒸着
時間と膜組成との関係の一例を示す図、第3図は連続的
にCr粒を供給するための装置を備えた真空蒸着装置内
部の概略図、第4図は粒状Crを供給しつつCo−Cr
膜を蒸着した場合の蒸着時間と膜組成との関係の一例を
示す図である。
1・・・・・・高分子基板、7・・・・・・蒸発物質の
溶湯、8・・・・・・棒状Cτ合金、9・・・・・・棒
状Cr 合金供給装置、10・・・・・・イオン銃、
11・・・・・・イオン。
代理人の氏名 弁理士 粟 野 重 孝 ほか1名j、
4 −m−
5−°゛
6−・−
7・・−
1%分子蟇蕉
円筒状キャン
ポピソ
迄へい板
る つ 1i
瓜発狗賽の溶湯
嬉2図
10−4オン銃
11−・−イオン
第3図Fig. 1 is a schematic diagram of the inside of a vacuum evaporation apparatus for explaining an example of the manufacturing method of the present invention, and Fig. 2 shows evaporation when a long Co-Cr film is produced without supplying Cr or CI alloy. A diagram showing an example of the relationship between time and film composition, FIG. 3 is a schematic diagram of the inside of a vacuum evaporation apparatus equipped with a device for continuously supplying Cr grains, and FIG. 4 is a diagram showing an example of the relationship between time and film composition. -Cr
FIG. 3 is a diagram showing an example of the relationship between the deposition time and the film composition when a film is deposited. DESCRIPTION OF SYMBOLS 1... Polymer substrate, 7... Molten metal of evaporated substance, 8... Rod-shaped Cτ alloy, 9... Rod-shaped Cr alloy supply device, 10... ...Ion gun,
11...Ion. Name of agent: Patent attorney Shigetaka Awano and one other person
4 -m- 5-°゛6-・- 7・・- 1% molecular toad until the cylindrical campopiso 1i Molten metal of gourd seed 2 Figure 10-4 On gun 11-・-ion No. Figure 3
Claims (2)
とCrあるいはCoとNiとCrを主成分とする合金を
磁性層として移動しつつある基板上に連続的に形成する
磁気記録媒体の製造方法において、棒状あるいは線状の
Co−CrあるいはCo−Ni−Cr合金をその表面を
エッチングした後に蒸発物質の溶湯中に供給しつつ前記
基板上に真空蒸着を行うことを特徴とする磁気記録媒体
の製造方法。(1) Co by vacuum evaporation method using an electron beam evaporation source
In a method for manufacturing a magnetic recording medium, in which a magnetic layer is continuously formed on a moving substrate, a magnetic layer is formed of a magnetic layer containing Co-Cr or an alloy containing Co, Ni, and Cr as main components. - A method for producing a magnetic recording medium, which comprises etching the surface of a -Cr alloy and then supplying it into a molten metal of an evaporated substance while performing vacuum deposition on the substrate.
ことを特徴とする請求項1記載の磁気記録媒体の製造方
法。(2) The method for manufacturing a magnetic recording medium according to claim 1, wherein the etching is performed using an ion gun during film formation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63291170A JPH02137126A (en) | 1988-11-17 | 1988-11-17 | Method for manufacturing magnetic recording media |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63291170A JPH02137126A (en) | 1988-11-17 | 1988-11-17 | Method for manufacturing magnetic recording media |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02137126A true JPH02137126A (en) | 1990-05-25 |
Family
ID=17765356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63291170A Pending JPH02137126A (en) | 1988-11-17 | 1988-11-17 | Method for manufacturing magnetic recording media |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02137126A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0603407A4 (en) * | 1992-05-11 | 1995-02-08 | Sumitomo Electric Industries | VACUUM METALLIZATION MATERIAL AND PROCESS FOR PRODUCING THE SAME. |
| JP2010053366A (en) * | 2008-08-26 | 2010-03-11 | Panasonic Corp | Film deposition method and film deposition apparatus |
| JP2011208246A (en) * | 2010-03-30 | 2011-10-20 | Panasonic Corp | Wire rod for vapor deposition and metallized film capacitor formed using the same |
-
1988
- 1988-11-17 JP JP63291170A patent/JPH02137126A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0603407A4 (en) * | 1992-05-11 | 1995-02-08 | Sumitomo Electric Industries | VACUUM METALLIZATION MATERIAL AND PROCESS FOR PRODUCING THE SAME. |
| US5441010A (en) * | 1992-05-11 | 1995-08-15 | Sumitomo Electric Industries, Ltd. | Evaporation material and method of preparing the same |
| US6126760A (en) * | 1992-05-11 | 2000-10-03 | Sumitomo Electric Industries, Ltd. | Evaporation material |
| JP2010053366A (en) * | 2008-08-26 | 2010-03-11 | Panasonic Corp | Film deposition method and film deposition apparatus |
| JP2011208246A (en) * | 2010-03-30 | 2011-10-20 | Panasonic Corp | Wire rod for vapor deposition and metallized film capacitor formed using the same |
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