JPH0148934B2 - - Google Patents
Info
- Publication number
- JPH0148934B2 JPH0148934B2 JP13224481A JP13224481A JPH0148934B2 JP H0148934 B2 JPH0148934 B2 JP H0148934B2 JP 13224481 A JP13224481 A JP 13224481A JP 13224481 A JP13224481 A JP 13224481A JP H0148934 B2 JPH0148934 B2 JP H0148934B2
- Authority
- JP
- Japan
- Prior art keywords
- torr
- polymer resin
- synthetic polymer
- low
- temperature plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002952 polymeric resin Substances 0.000 claims description 20
- 229920001059 synthetic polymer Polymers 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 125000006414 CCl Chemical group ClC* 0.000 claims description 3
- 150000003377 silicon compounds Chemical class 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 239000007789 gas Substances 0.000 description 15
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 150000003961 organosilicon compounds Chemical class 0.000 description 9
- 238000011282 treatment Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 239000003795 chemical substances by application Substances 0.000 description 6
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 6
- 238000009832 plasma treatment Methods 0.000 description 6
- -1 polyethylene Polymers 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 4
- 230000000704 physical effect Effects 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- ITKVLPYNJQOCPW-UHFFFAOYSA-N chloro-(chloromethyl)-dimethylsilane Chemical compound C[Si](C)(Cl)CCl ITKVLPYNJQOCPW-UHFFFAOYSA-N 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 229910001872 inorganic gas Inorganic materials 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229920003002 synthetic resin Polymers 0.000 description 3
- 239000005051 trimethylchlorosilane Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- DCFKHNIGBAHNSS-UHFFFAOYSA-N chloro(triethyl)silane Chemical compound CC[Si](Cl)(CC)CC DCFKHNIGBAHNSS-UHFFFAOYSA-N 0.000 description 2
- XSDCTSITJJJDPY-UHFFFAOYSA-N chloro-ethenyl-dimethylsilane Chemical compound C[Si](C)(Cl)C=C XSDCTSITJJJDPY-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000005055 methyl trichlorosilane Substances 0.000 description 2
- JLUFWMXJHAVVNN-UHFFFAOYSA-N methyltrichlorosilane Chemical compound C[Si](Cl)(Cl)Cl JLUFWMXJHAVVNN-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- VTXCYUSDHZKYIF-UHFFFAOYSA-N Cl[SiH](Cl)C1=CC=C(Cl)C=C1 Chemical compound Cl[SiH](Cl)C1=CC=C(Cl)C=C1 VTXCYUSDHZKYIF-UHFFFAOYSA-N 0.000 description 1
- 229920000742 Cotton Polymers 0.000 description 1
- JHWNWJKBPDFINM-UHFFFAOYSA-N Laurolactam Chemical compound O=C1CCCCCCCCCCCN1 JHWNWJKBPDFINM-UHFFFAOYSA-N 0.000 description 1
- 239000004640 Melamine resin Substances 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000006057 Non-nutritive feed additive Substances 0.000 description 1
- 229920000299 Nylon 12 Polymers 0.000 description 1
- 229920002292 Nylon 6 Polymers 0.000 description 1
- 239000004962 Polyamide-imide Substances 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 description 1
- 229920002978 Vinylon Polymers 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 1
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 1
- 229920001893 acrylonitrile styrene Polymers 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229920001400 block copolymer Polymers 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- CKNVNQHQPPZERM-UHFFFAOYSA-N chloro-bis(chloromethyl)-methylsilane Chemical compound ClC[Si](Cl)(C)CCl CKNVNQHQPPZERM-UHFFFAOYSA-N 0.000 description 1
- OUQQOFBDJVVMIF-UHFFFAOYSA-N chloro-dimethyl-(trichloromethyl)silane Chemical compound C[Si](C)(Cl)C(Cl)(Cl)Cl OUQQOFBDJVVMIF-UHFFFAOYSA-N 0.000 description 1
- MISGXMIUJANMGE-UHFFFAOYSA-N chloro-dimethyl-(trimethylsilylmethyl)silane Chemical compound C[Si](C)(C)C[Si](C)(C)Cl MISGXMIUJANMGE-UHFFFAOYSA-N 0.000 description 1
- KWYZNESIGBQHJK-UHFFFAOYSA-N chloro-dimethyl-phenylsilane Chemical compound C[Si](C)(Cl)C1=CC=CC=C1 KWYZNESIGBQHJK-UHFFFAOYSA-N 0.000 description 1
- OVBLEGLAZLZLDP-UHFFFAOYSA-N chloro-ethenyl-diethylsilane Chemical compound CC[Si](Cl)(CC)C=C OVBLEGLAZLZLDP-UHFFFAOYSA-N 0.000 description 1
- AVDUEHWPPXIAEB-UHFFFAOYSA-N chloro-ethyl-dimethylsilane Chemical compound CC[Si](C)(C)Cl AVDUEHWPPXIAEB-UHFFFAOYSA-N 0.000 description 1
- LMQNPINUXNVGGV-UHFFFAOYSA-N chloro-tris(prop-2-enyl)silane Chemical compound C=CC[Si](Cl)(CC=C)CC=C LMQNPINUXNVGGV-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- PFMKUUJQLUQKHT-UHFFFAOYSA-N dichloro(ethyl)silicon Chemical compound CC[Si](Cl)Cl PFMKUUJQLUQKHT-UHFFFAOYSA-N 0.000 description 1
- XNAFLNBULDHNJS-UHFFFAOYSA-N dichloro(phenyl)silicon Chemical compound Cl[Si](Cl)C1=CC=CC=C1 XNAFLNBULDHNJS-UHFFFAOYSA-N 0.000 description 1
- MAYIDWCWWMOISO-UHFFFAOYSA-N dichloro-bis(ethenyl)silane Chemical compound C=C[Si](Cl)(Cl)C=C MAYIDWCWWMOISO-UHFFFAOYSA-N 0.000 description 1
- YLJJAVFOBDSYAN-UHFFFAOYSA-N dichloro-ethenyl-methylsilane Chemical compound C[Si](Cl)(Cl)C=C YLJJAVFOBDSYAN-UHFFFAOYSA-N 0.000 description 1
- PNECSTWRDNQOLT-UHFFFAOYSA-N dichloro-ethyl-methylsilane Chemical compound CC[Si](C)(Cl)Cl PNECSTWRDNQOLT-UHFFFAOYSA-N 0.000 description 1
- QPVNWLRQLVKKPS-UHFFFAOYSA-N dichloro-methyl-(trimethylsilylmethyl)silane Chemical compound C[Si](C)(C)C[Si](C)(Cl)Cl QPVNWLRQLVKKPS-UHFFFAOYSA-N 0.000 description 1
- LIKFHECYJZWXFJ-UHFFFAOYSA-N dimethyldichlorosilane Chemical compound C[Si](C)(Cl)Cl LIKFHECYJZWXFJ-UHFFFAOYSA-N 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000005923 long-lasting effect Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000005054 phenyltrichlorosilane Substances 0.000 description 1
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 description 1
- 239000004014 plasticizer Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 229920002312 polyamide-imide Polymers 0.000 description 1
- 229920001230 polyarylate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 150000008442 polyphenolic compounds Chemical class 0.000 description 1
- 235000013824 polyphenols Nutrition 0.000 description 1
- 229920006380 polyphenylene oxide Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- SCUZVMOVTVSBLE-UHFFFAOYSA-N prop-2-enenitrile;styrene Chemical compound C=CC#N.C=CC1=CC=CC=C1 SCUZVMOVTVSBLE-UHFFFAOYSA-N 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- INJPZIBAJPTHAP-UHFFFAOYSA-N trichloro(2,2-dichloroethyl)silane Chemical compound ClC(Cl)C[Si](Cl)(Cl)Cl INJPZIBAJPTHAP-UHFFFAOYSA-N 0.000 description 1
- LLMDVCLUSLJYNI-UHFFFAOYSA-N trichloro(2-chloroethenyl)silane Chemical compound ClC=C[Si](Cl)(Cl)Cl LLMDVCLUSLJYNI-UHFFFAOYSA-N 0.000 description 1
- GQIUQDDJKHLHTB-UHFFFAOYSA-N trichloro(ethenyl)silane Chemical compound Cl[Si](Cl)(Cl)C=C GQIUQDDJKHLHTB-UHFFFAOYSA-N 0.000 description 1
- ZOYFEXPFPVDYIS-UHFFFAOYSA-N trichloro(ethyl)silane Chemical compound CC[Si](Cl)(Cl)Cl ZOYFEXPFPVDYIS-UHFFFAOYSA-N 0.000 description 1
- ORVMIVQULIKXCP-UHFFFAOYSA-N trichloro(phenyl)silane Chemical compound Cl[Si](Cl)(Cl)C1=CC=CC=C1 ORVMIVQULIKXCP-UHFFFAOYSA-N 0.000 description 1
- HVGASDGTRXGYOI-UHFFFAOYSA-N trichloro(prop-1-en-2-yl)silane Chemical compound CC(=C)[Si](Cl)(Cl)Cl HVGASDGTRXGYOI-UHFFFAOYSA-N 0.000 description 1
- 229920006305 unsaturated polyester Polymers 0.000 description 1
- 239000005050 vinyl trichlorosilane Substances 0.000 description 1
Landscapes
- Treatments Of Macromolecular Shaped Articles (AREA)
Description
本発明は帯電防止性合成高分子樹脂成形品の製
造方法に関する。
従来、合成高分子樹脂成形品は一般にその製造
が容易でしかも安価に大量供給できること、電気
絶縁性等の性質にすぐれていることなどの理由か
ら汎用材料・製品として大量に使用されている。
しかし、合成高分子樹脂成形品は一般に著しく帯
電しやすいため、ほこり、じんあい等の付着によ
る外観が汚れやすく、また蓄積した静電気による
人体への影響(電撃シヨツク)、火花放電、ある
いは電子回路材料においてのノイズ発生等の問題
点を有している。
この帯電(静電気の蓄積)を防止するための方
法として従来から種々の方法が試みられており、
これには金属粉末、カーボンブラツク等の導電材
料を添加する方法、界面活性剤等の除電剤を配
合・塗布する方法、酸エツチング等の薬品処理、
火炎処理、活性線(電子線、紫外光、放射線等)
による表面グラフト反応等により表面に親水性の
官能基を導入する方法、表面を無機ガスの低温プ
ラズマで処理する方法などがある。しかし、いず
れの方法も十分な帯電防止効果を付与することが
できないか、または付与することができたとして
も他方で元の合成高分子樹脂成形品のバルク特性
を著しく変質させてしまうという欠点があり、満
足させるべき方法は提案されていない。
本発明者らはこのような観点から合成樹脂成形
品の表面を低温プラズマ処理する方法について広
く研究を行つたところ、分子内にC―ClまたはC
―F結合をもたない合成高分子樹脂成形品につい
ては、分子内にSi―Cl結合を有する有機けい素化
合物の低温プラズマで処理することにより、その
樹脂成形品のバルク等性を変えることなく、それ
に耐久性・持久性にすぐれた十分な帯電防止性の
効果を付与することができることを確認し、本発
明を完成した。
以下本発明を詳しく説明する。
まず本発明で対象とされる合成高分子樹脂成形
品は、その合成高分子樹脂が分子内にC―Clまた
はC―F結合をもたないものであり(したがつて
塩化ビニル系樹脂およびフツ素系樹脂等は本発明
では対象外とされる)、これには低圧、中圧、高
圧のポリエチレン、ポリプロピレン、ポリスチレ
ン、飽和もしくは不飽和のポリエステル、ビニロ
ン、ポリアセテート、ポリスルフオン、ポリカー
ボネート、ポリウレタン、ポリイミド、ポリアミ
ド(ナイロン6、ナイロン12など)、ポリアミド
イミド、ポリビニルアルコール、ポリアクリル、
ポリメタクリル、アクリロニトリルスチレン共重
合体、アクリロニトリルブタジエンスチレン共重
合体、エチレン酢酸ビニル共重合体、ユリア樹
脂、メラミン樹脂、シリコーン樹脂、ポリフエニ
レンオキサイド、ポリアリレート、ポリパラキシ
レン、ポリフエノール、エポキシ樹脂、ポリジア
リルフタレート、さらにはそれらのブロツク共重
合体、グラフト共重合体、異種高分子樹脂混合体
が例示される。
以上記述した合成高分子樹脂を用いて成形品を
製造するに当り、各種配合剤、添加剤あるいは加
工助剤等が適宜配合されることは差支えなく、こ
れには例えば可塑剤、安定剤、滑剤、充てん剤、
増量剤、顔量、染料、耐熱剤、難燃剤、抗酸化
剤、光吸収剤、界面活性剤、架橋剤、防曇剤、防
湿剤、弾性向上剤等があげられる。成形方法はキ
ヤステイング法、溶融押出法、カレンダー法、延
伸法、圧縮法等従来各々の高分子樹脂の成形で採
用されている成形手段によればよく、成形品の種
類、形状については特に制限はない。なお、この
成形品は、適宜、熱処理、延伸処理、収縮処理、
架橋、サンドブラスト、コロナ放電、溶剤処理、
活性線処理等の2次的加工が施されていてもよ
く、これにより本発明の効果に悪影響を受けるこ
とはない。
本発明は上記合成高分子樹脂成形品の表面を有
機けい素化合物の低温プラズマで処理することに
より、この成形品の表面特性を改質し、耐久性、
持続性にすぐれた帯電防止性を付与するものであ
るが、こうした効果を得るためには該有機けい素
化合物は分子内にSi―Cl結合を有するものである
ことが必要とされる。このような有機けい素化合
物としてはジハイドロジエンメチルクロロシラ
ン、モノハイドロジエンジメチルクロロシラン、
トリメチルクロロシラン、ジメチルエチルクロロ
シラン、フエニルジメチルクロロシラン、トリエ
チルクロロシラン、ビニルジエチルクロロシラ
ン、トリ(2―プロペニル)クロロシラン、2,
4,4―トリメチル―2―クロロ―2,4―ジシ
ラペンタン、クロロメチルジメチルクロロシラ
ン、ジ(クロロメチル)メチルクロロシラン、ト
リクロロメチルジメチルメチルクロロシラン、ト
リクロロメチルジメチルクロロシラン、モノハイ
ドロジエンメチルジクロロシラン、エチルジクロ
ロシラン、フエニルジクロロシラン、4―クロロ
フエニルジクロロシラン、ジメチルジクロロシラ
ン、メチルエチルジクロロシラン、ビニルメチル
ジクロロシラン、ジビニルジクロロシラン、2,
2―ジメチル―4,4―ジクロロ―2,4―ジシ
ラペンタン、メチルトリクロロシラン、エチルト
リクロロシラン、ビニルトリクロロシラン、フエ
ニルトリクロロシラン、1―メチルビニルトリク
ロロシラン、2―クロロビニルトリクロロシラ
ン、2,2―ジクロロエチルトリクロロシランな
どが例示される。
低温プラズマ処理の方法は、低温プラズマ発生
装置内に合成高分子樹脂成形品を装入し、この装
置内に前記有機けい素化合物のガスを流通させな
がら装置内を望ましくは10トル以下の圧力に調整
保持し、このガス圧力下に低温プラズマを発生さ
せ、該成形品を低温プラズマにさらすという方法
により行われる。なお、この有機けい素化合物と
共にヘリウム、アルゴン等の不活性ガス、窒素、
酸素、空気、水素、水蒸気、二酸化炭素、一酸化
炭素等の無機ガス、有機けい素化合物以外の有機
化合物ガスを共存させてもよい。
上記処理方法において、有機けい素化合物の装
置内における圧力が10トル以上であると、帯電防
止性にすぐれた処理成形品を得ることが困難とな
るので、この低温プラズマのガス圧力は10トル以
下であることがよく、特には1〜0.005トルの範
囲であることが望ましい。このガス圧力における
低温プラズマ処理ですぐれた帯電防止性が付与さ
れるが、ガス圧力が10トル以上に高くなると、帯
電防止性が急激に減少する(表面抵抗性の増大を
ともなう)ようになる現象は、従来のプラズマ重
合、プラズマ処理で得られた知見からは全く予想
し得ないことである。
低温プラズマを発生させる条件としては、例え
ば電極に数KHz〜数百MHz、数W〜数百KWの電
力を印加すればよく、内部電極、外部電極(無電
極)のいずれの方式を使用してもよい。また、放
電の種類(グロー放電、コロナ放電等)にかかわ
らず十分な改質効果が得られる。プラズマ処理時
間は印加電力等によつても相違するが、一般には
数秒〜数十分で十分である。
なお、低温プラズマ処理に当つて、有機けい素
化合物はその2種以上を混合または併用して差支
えなく、場合によつて相乗効果を期待できること
もある。また、合成高分子樹脂成形品に帯電防止
性だけでなく、それ以外の特性をも付与するため
に、有機けい素化合物に他の有機化合物および/
または前記した無機ガスを混合または併用するこ
とは有効であり、これによれば耐久性、持続性に
すぐれた良好な帯電防止性(表面抵抗性の減少)
が付与されるのみならず、ぬれ性、接着性、印刷
性、耐摩耗性、離型性、耐熱性、耐水性、耐移行
性等も付与されるという利点が与えられる。
つぎに具体的実施例をあげる。
実施例 1
表―1に示す各合成高分子樹脂シートをプラズ
マ発生装置内にセツトし、装置内を10-3トルまで
減圧にした後、大気を導入し、大気流通下装置内
を0.07トルに調整し、その後トリメチルクロロシ
ラン蒸気を導入して、流通大気と混合しつつ、大
気分圧を0.07トル、トリメチルクロロシラン分圧
を0.1トルに調整保持後、13.56MHz、1KWの高周
波電力を与えて低温プラズマを発生させ、シート
を1分間処理した。このようにして処理したシー
トおよびプラズマ処理を行わなかつたシートにつ
いて表面固有抵抗値(※1)、摩擦帯電圧(※2)
を測定し、帯電防止性を評価した。結果は表―1
に示すとおりであつた。
(※1) 東亜電波工業(株)製SM―15Eにより測
定(ohm)
(※2) 興亜商会製ロータリースタテイツクテ
スターにより測定(volt)
条件:木綿布、200g荷重、750rpm、60秒
The present invention relates to a method for producing an antistatic synthetic polymer resin molded article. Conventionally, synthetic polymer resin molded articles have been used in large quantities as general-purpose materials and products because they are generally easy to manufacture, can be supplied in large quantities at low cost, and have excellent properties such as electrical insulation.
However, synthetic polymer resin molded products are generally easily charged with electricity, so their appearance is easily soiled due to the adhesion of dust and dirt, and accumulated static electricity can affect the human body (electric shock), spark discharge, and electronic circuit materials. There are problems such as noise generation. Various methods have been tried in the past to prevent this charging (accumulation of static electricity).
This includes methods of adding conductive materials such as metal powder and carbon black, methods of blending and applying static neutralizing agents such as surfactants, chemical treatments such as acid etching, etc.
Flame treatment, active radiation (electron beam, ultraviolet light, radiation, etc.)
There are methods of introducing hydrophilic functional groups onto the surface through a surface graft reaction, etc., and methods of treating the surface with low-temperature plasma of an inorganic gas. However, none of these methods can provide a sufficient antistatic effect, or even if they can, they have the drawback of significantly altering the bulk properties of the original synthetic polymer resin molded product. Yes, and no method has been proposed to satisfy them. From this point of view, the present inventors conducted extensive research on a method of low-temperature plasma treatment of the surface of synthetic resin molded products, and found that C-Cl or C
- Synthetic polymer resin molded products that do not have F bonds can be treated with low-temperature plasma of organosilicon compounds that have Si-Cl bonds in their molecules, without changing the bulk properties of the resin molded products. It was confirmed that a sufficient antistatic effect with excellent durability and durability could be imparted to the material, and the present invention was completed. The present invention will be explained in detail below. First, the synthetic polymer resin molded article targeted by the present invention is one in which the synthetic polymer resin does not have C-Cl or C-F bonds in the molecule (therefore, it is different from vinyl chloride resin and foam). These include low-pressure, medium-pressure, and high-pressure polyethylene, polypropylene, polystyrene, saturated or unsaturated polyester, vinylon, polyacetate, polysulfone, polycarbonate, polyurethane, and polyimide. , polyamide (nylon 6, nylon 12, etc.), polyamideimide, polyvinyl alcohol, polyacrylic,
Polymethacrylic, acrylonitrile styrene copolymer, acrylonitrile butadiene styrene copolymer, ethylene vinyl acetate copolymer, urea resin, melamine resin, silicone resin, polyphenylene oxide, polyarylate, polyparaxylene, polyphenol, epoxy resin, Examples include polydiallyl phthalate, block copolymers, graft copolymers, and mixtures of different polymer resins. When manufacturing molded products using the synthetic polymer resin described above, there is no problem in adding various compounding agents, additives, processing aids, etc., such as plasticizers, stabilizers, lubricants, etc. , filler,
Extending agents, face weights, dyes, heat-resistant agents, flame retardants, antioxidants, light absorbers, surfactants, cross-linking agents, anti-fogging agents, moisture-proofing agents, elasticity improvers and the like can be mentioned. The molding method may be a casting method, melt extrusion method, calender method, stretching method, compression method, or any other molding method conventionally adopted for molding each polymer resin, and there are no particular restrictions on the type and shape of the molded product. There isn't. In addition, this molded product may be subjected to heat treatment, stretching treatment, shrinkage treatment,
crosslinking, sandblasting, corona discharge, solvent treatment,
Secondary processing such as actinic radiation treatment may be performed, and the effects of the present invention will not be adversely affected by this. The present invention improves the surface characteristics of the molded product by treating the surface of the synthetic polymer resin molded product with low-temperature plasma of an organosilicon compound, improving durability and
It imparts long-lasting antistatic properties, but in order to obtain this effect, the organosilicon compound needs to have a Si--Cl bond in its molecule. Examples of such organosilicon compounds include dihydrodienemethylchlorosilane, monohydrodienedimethylchlorosilane,
Trimethylchlorosilane, dimethylethylchlorosilane, phenyldimethylchlorosilane, triethylchlorosilane, vinyldiethylchlorosilane, tri(2-propenyl)chlorosilane, 2,
4,4-trimethyl-2-chloro-2,4-disilapentane, chloromethyldimethylchlorosilane, di(chloromethyl)methylchlorosilane, trichloromethyldimethylmethylchlorosilane, trichloromethyldimethylchlorosilane, monohydrodienemethyldichlorosilane, ethyldichlorosilane , phenyldichlorosilane, 4-chlorophenyldichlorosilane, dimethyldichlorosilane, methylethyldichlorosilane, vinylmethyldichlorosilane, divinyldichlorosilane, 2,
2-dimethyl-4,4-dichloro-2,4-disilapentane, methyltrichlorosilane, ethyltrichlorosilane, vinyltrichlorosilane, phenyltrichlorosilane, 1-methylvinyltrichlorosilane, 2-chlorovinyltrichlorosilane, 2,2 -Dichloroethyltrichlorosilane and the like are exemplified. The method of low-temperature plasma treatment involves placing a synthetic polymer resin molded product in a low-temperature plasma generator, and increasing the pressure inside the device to preferably 10 torr or less while flowing the organosilicon compound gas through the device. This is carried out by a method of adjusting and holding the gas, generating low-temperature plasma under this gas pressure, and exposing the molded product to the low-temperature plasma. In addition to this organosilicon compound, inert gases such as helium and argon, nitrogen,
Inorganic gases such as oxygen, air, hydrogen, water vapor, carbon dioxide, and carbon monoxide, and organic compound gases other than organosilicon compounds may be allowed to coexist. In the above treatment method, if the pressure inside the organosilicon compound device is 10 Torr or more, it will be difficult to obtain a treated molded product with excellent antistatic properties, so the gas pressure of this low-temperature plasma should be 10 Torr or less. The range is preferably from 1 to 0.005 Torr. Low-temperature plasma treatment at this gas pressure imparts excellent antistatic properties, but when the gas pressure increases above 10 Torr, the antistatic properties rapidly decrease (accompanied by an increase in surface resistance). This is completely unexpected from the knowledge obtained in conventional plasma polymerization and plasma treatment. The conditions for generating low-temperature plasma include, for example, applying a power of several KHz to several hundred MHz and several W to several hundred KW to the electrodes, and using either internal electrode or external electrode (electrodeless) method. Good too. Further, a sufficient reforming effect can be obtained regardless of the type of discharge (glow discharge, corona discharge, etc.). The plasma processing time varies depending on the applied power and the like, but generally several seconds to several tens of minutes is sufficient. In the low-temperature plasma treatment, two or more types of organosilicon compounds may be mixed or used in combination, and a synergistic effect may be expected in some cases. In addition, in order to impart not only antistatic properties but also other properties to synthetic polymer resin molded products, other organic compounds and/or
Alternatively, it is effective to mix or use the above-mentioned inorganic gases in combination, and this provides excellent antistatic properties (reduction in surface resistance) with excellent durability and sustainability.
It has the advantage that it not only provides properties such as wettability, adhesiveness, printability, abrasion resistance, mold releasability, heat resistance, water resistance, migration resistance, etc. Next, a specific example will be given. Example 1 Each synthetic polymer resin sheet shown in Table 1 was set in a plasma generator, the pressure inside the device was reduced to 10 -3 Torr, and then the atmosphere was introduced to reduce the pressure inside the device to 0.07 Torr under atmospheric circulation. After that, trimethylchlorosilane vapor was introduced, and while mixing with the flowing atmosphere, the atmospheric partial pressure was adjusted to 0.07 Torr and the trimethylchlorosilane partial pressure was adjusted to 0.1 Torr, and then high-frequency power of 13.56MHz and 1KW was applied to create a low-temperature plasma. was generated and the sheet was processed for 1 minute. Surface specific resistance value (*1) and frictional charging voltage (*2) for sheets treated in this way and sheets that were not subjected to plasma treatment
was measured to evaluate antistatic properties. The results are in Table-1
It was as shown in. (*1) Measured with SM-15E manufactured by Toa Denpa Kogyo Co., Ltd. (ohm) (*2) Measured with a rotary static tester manufactured by Koa Shokai (volt) Conditions: Cotton cloth, 200g load, 750rpm, 60 seconds
【表】
実施例 2
表―2に示す各合成高分子樹脂板をプラズマ発
生装置内にセツトし、装置内を10-4まで減圧にし
た後アルゴンガスを導入し、ガス流通下装置内を
0.1トルに調整し、その後クロロメチルジメチル
クロロシラン蒸気を導入して流通アルゴンガスと
混合しつつアルゴン分圧を0.1トル一定とし、ク
ロロメチルジメチルクロロシラン分圧を各々0.1
トル、0.5トル、1.5トルに変えて調整保持後110K
Hz5KWの高周波電力を与えて低温プラズマを発
生させ板を30秒間処理した。このようにして処理
した各板について実験No.1と同様に物性を測定し
たところ、結果は表―2に示すとおりであつた。[Table] Example 2 Each synthetic polymer resin plate shown in Table 2 was set in a plasma generator, and after reducing the pressure inside the device to 10 -4 , argon gas was introduced and the inside of the device was heated under gas flow.
After that, chloromethyldimethylchlorosilane vapor was introduced and mixed with flowing argon gas to keep the argon partial pressure constant at 0.1 torr, and the chloromethyldimethylchlorosilane partial pressure was adjusted to 0.1 torr.
110K after changing to Torr, 0.5 Torr, and 1.5 Torr and holding the adjustment.
A high frequency power of Hz5KW was applied to generate low temperature plasma and the plate was treated for 30 seconds. The physical properties of each plate treated in this manner were measured in the same manner as in Experiment No. 1, and the results were as shown in Table 2.
【表】
実施例 3
表―3に示す各合成高分子樹脂フイルムをプラ
ズマ発生装置内にセツトし、装置内を10-4トルま
で減圧にした後メチルトリクロロシランガスを導
入し、系内を0.05トルに調整保持後13.56MHz
200Wの高周波電力を与えて低温プラズマを発生
させフイルムを3分間処理した。このようにして
処理したフイルムを実験No.1と同様にして物性を
測定したところ、結果は表―3に示すとおりであ
つた。[Table] Example 3 Each synthetic polymer resin film shown in Table 3 was set in a plasma generator, and after reducing the pressure inside the device to 10 -4 Torr, methyltrichlorosilane gas was introduced to reduce the pressure in the system to 0.05 Torr. Adjusted to 13.56MHz after holding
A high-frequency power of 200 W was applied to generate low-temperature plasma, and the film was processed for 3 minutes. The physical properties of the thus treated film were measured in the same manner as in Experiment No. 1, and the results were as shown in Table 3.
【表】【table】
【表】
実施例 4
表―4に示す各合成高分子樹脂フイルムをプラ
ズマ発生装置内にセツトし、装置内を10-2トルま
で減圧にした後、窒素ガスを導入し、ガス流通下
装置内を0.05トルに調整し、その後ビニルジメチ
ルクロロシランガスを導入し、流通窒素ガスと混
合しつつ窒素分圧を0.05トル、ビニルジメチルク
ロロシラン分圧を0.05トルに調整保持後13.56M
Hz100Wの高周波電力を与えて低温プラズマを発
生させフイルムを5分間処理した。このようにし
て処理したフイルムを実験No.1と同様にして物性
を測定したところ、結果は表―4に示すとおりで
あつた。[Table] Example 4 Each synthetic polymer resin film shown in Table 4 was set in a plasma generator, and after reducing the pressure inside the device to 10 -2 Torr, nitrogen gas was introduced and the inside of the device was heated under gas flow. was adjusted to 0.05 torr, then vinyldimethylchlorosilane gas was introduced, and while mixing with flowing nitrogen gas, the nitrogen partial pressure was adjusted to 0.05 torr and the vinyldimethylchlorosilane partial pressure was adjusted to 0.05 torr and held at 13.56M.
High-frequency power of 100 W of Hz was applied to generate low-temperature plasma, and the film was processed for 5 minutes. The physical properties of the film thus treated were measured in the same manner as in Experiment No. 1, and the results were as shown in Table 4.
【表】
参考例
比較例として、表―5に示す各合成高分子樹脂
フイルムをプラズマ発生装置内にセツトし、装置
内を10-2トルまで減圧後、アルゴンガスを導入
し、ガス流通下装置内を0.05トルに調整し、
13.56MHz、100Wの高周波電力を与えて低温プラ
ズマを発生させ、フイルムを5分間処理した。こ
のようにして処理したフイルムを実験No.1と同様
にして物性を測定したところ、表―5に示すとお
りであつた。[Table] Reference example As a comparative example, each synthetic polymer resin film shown in Table 5 was set in a plasma generator, and after reducing the pressure inside the device to 10 -2 Torr, argon gas was introduced and the device was placed under gas flow. Adjust the inside to 0.05 Torr,
A high-frequency power of 100 W at 13.56 MHz was applied to generate low-temperature plasma, and the film was processed for 5 minutes. The physical properties of the thus treated film were measured in the same manner as in Experiment No. 1, and the properties were as shown in Table 5.
【表】【table】
Claims (1)
合成高分子樹脂成形品の表面を、分子内にSi―Cl
結合を有する有機けい素化合物の低温プラズマで
処理することを特徴とする帯電防止性合成高分子
樹脂成形品の製造方法。1 The surface of a synthetic polymer resin molded product that does not have C-Cl or C-F bonds in its molecules is
1. A method for producing an antistatic synthetic polymer resin molded article, which comprises treating with a low-temperature plasma of an organic silicon compound having a bond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13224481A JPS5834831A (en) | 1981-08-24 | 1981-08-24 | Method for manufacturing antistatic synthetic polymer resin molded products |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13224481A JPS5834831A (en) | 1981-08-24 | 1981-08-24 | Method for manufacturing antistatic synthetic polymer resin molded products |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5834831A JPS5834831A (en) | 1983-03-01 |
| JPH0148934B2 true JPH0148934B2 (en) | 1989-10-23 |
Family
ID=15076731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13224481A Granted JPS5834831A (en) | 1981-08-24 | 1981-08-24 | Method for manufacturing antistatic synthetic polymer resin molded products |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5834831A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020149420A1 (en) * | 2019-01-18 | 2020-07-23 | 文化シヤッター株式会社 | Opening-closing control system and opening-closing control method |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10325437A1 (en) * | 2003-06-05 | 2004-12-23 | Bayer Materialscience Ag | Polycarbonate molded body with low Staubanziehung |
-
1981
- 1981-08-24 JP JP13224481A patent/JPS5834831A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020149420A1 (en) * | 2019-01-18 | 2020-07-23 | 文化シヤッター株式会社 | Opening-closing control system and opening-closing control method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5834831A (en) | 1983-03-01 |
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