JPH0125281Y2 - - Google Patents
Info
- Publication number
- JPH0125281Y2 JPH0125281Y2 JP1981074219U JP7421981U JPH0125281Y2 JP H0125281 Y2 JPH0125281 Y2 JP H0125281Y2 JP 1981074219 U JP1981074219 U JP 1981074219U JP 7421981 U JP7421981 U JP 7421981U JP H0125281 Y2 JPH0125281 Y2 JP H0125281Y2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic field
- layer
- conductive layer
- signal magnetic
- periodic signal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Measurement Of Length, Angles, Or The Like Using Electric Or Magnetic Means (AREA)
- Transmission And Conversion Of Sensor Element Output (AREA)
Description
【考案の詳細な説明】
本考案は、測長方向に沿つて発生する周期的信
号磁界を、強磁性薄膜磁気抵抗効果素子（以下
MR素子という）より成る磁気センサで読み取る
ことにより、測長を行う位置検出器に関する。[Detailed description of the invention] This invention uses a ferromagnetic thin film magnetoresistive element (hereinafter referred to as
It relates to a position detector that measures length by reading it with a magnetic sensor consisting of an MR element.
従来より、この種の位置検出器に用いられる周
期的信号磁界発生体としては、周期的な位置信号
が等間隔のビツト長を有する磁化の繰り返しの形
で記録された磁気記憶媒体が用いられている。し
かし、これは磁気記憶媒体作製工程のほかに、位
置信号記録工程が必要であるので、周期的信号磁
界発生体として適切な性能を得るためには、これ
ら両工程に対して、特性、精度及び再現性の十分
な保証が要求される。従つて、そのような従来の
構成では、高性能で、低価格な位置検出器を得る
ことは困難であつた。 Conventionally, as a periodic signal magnetic field generator used in this type of position detector, a magnetic storage medium in which periodic position signals are recorded in the form of repeating magnetization with equally spaced bit lengths has been used. There is. However, this requires a position signal recording process in addition to the magnetic storage medium manufacturing process, so in order to obtain appropriate performance as a periodic signal magnetic field generator, the characteristics, accuracy, and Sufficient guarantee of reproducibility is required. Therefore, with such a conventional configuration, it has been difficult to obtain a high-performance, low-cost position detector.
本考案の目的は、これに比べて簡便で高性能な
位置検出器を提供することにある。 An object of the present invention is to provide a position detector that is simpler and has higher performance than the above.
すなわち、本考案の構成は、基板上に形成され
た高透磁率磁性体層の上に、絶縁層を介して、一
定の周期で折り返した形状を有する導電体層が形
成されており、さらにその上に絶縁層を介して高
透磁率磁性体層がその導電体層上ではギヤツプを
有し、かつ、その導電体層の折り返しの溝をうめ
る様に形成されており、前記導電体層のの両端が
電流源に接続された周期的信号磁界発生体と、こ
の周期的信号磁界発生体との相対運動によつて前
記ギヤツプ部に生じる周期的信号磁界の変化を電
気抵抗の変化として感知できる様に配置された
MR素子より成る磁気センサとから成る。 In other words, the configuration of the present invention is that a conductive layer having a shape folded at a constant period is formed on a high permeability magnetic layer formed on a substrate with an insulating layer interposed therebetween. A high permeability magnetic layer is formed on the conductor layer with an insulating layer interposed therebetween, with a gap therebetween, and is formed so as to fill the folded groove of the conductor layer. A periodic signal magnetic field generating body whose both ends are connected to a current source, and a change in the periodic signal magnetic field generated in the gap portion due to relative movement between the periodic signal magnetic field generating body and the periodic signal magnetic field generating body can be sensed as a change in electrical resistance. placed in
It consists of a magnetic sensor consisting of an MR element.
次に本考案を図面を用いて詳細に説明する。 Next, the present invention will be explained in detail using the drawings.
第１図は本考案の一実施例であり、基板１上に
形成された高透磁率磁性体層２の上に絶縁層３を
介して、ｘ方向に沿つてピツチＰで折り返した形
状を有する導電体層が形成されており、さらに、
絶縁層（これは簡略化のため図示を略してある。）
を介して、高透磁率磁性体層５が、前記導電体層
４の上では幅Ｇのギヤツプ９を有し、かつ、導電
体層４の溝の部分をうめる様に形成され、この導
電体層４の両端は電流源６に接続されている。そ
して、ストライプ状のMR素子１０が前記導電体
層４に対して、信号磁界の水平成分を検出する様
にスペーシングＤを介して平行に配設されてい
る。 FIG. 1 shows an embodiment of the present invention, which has a shape folded at a pitch P along the x direction with an insulating layer 3 interposed on a high permeability magnetic layer 2 formed on a substrate 1. A conductor layer is formed, and further,
Insulating layer (this is not shown for simplicity)
A high magnetic permeability magnetic layer 5 is formed on the conductor layer 4 to have a gap 9 of width G and to fill the groove portion of the conductor layer 4. Both ends of the layer 4 are connected to a current source 6. A striped MR element 10 is arranged parallel to the conductive layer 4 with a spacing D in between so as to detect the horizontal component of the signal magnetic field.
第２図は、MR素子１０の再生回路例、第３図
はストライプ状MR素子１０の比抵抗変化とスト
ライプ幅方向磁界との関係、すなわちMR静特性
曲線を示す図である。 FIG. 2 is an example of a reproducing circuit for the MR element 10, and FIG. 3 is a diagram showing the relationship between the resistivity change and the magnetic field in the stripe width direction of the striped MR element 10, that is, the MR static characteristic curve.
この実施例において、例えば導電体層４に矢印
方向７に電流ｉを流しながらMR素子１０と周期
的信号磁界発生体とがｘ方向の相対運動をした時
の動作を第４図を用いて説明する。断面図ａにお
いて導電体層４に電流ｉが流れるとこの導電体層
４をはさむ様に形成された高透磁率磁性体層２及
び５が磁化され、この磁化によつてｘ方向に沿つ
てギヤツプ９近傍には周期的信号磁界８が生じ
る。この時高透磁率磁性体層５の上方又はその近
傍で導電体層面（xy面）からＺ方向に所定の距
離Ｄ（スペーシング）だけ離れた位置での信号磁
界８のｘ成分Hxは、第４図ｂに示す様に、ギヤ
ツプ９のｘ方向位置に対応したピツチＰの周期的
信号磁界１４となる。これに対応して生じるMR
素子１０の抵抗変化を差動増幅器１１を通して信
号出力１５に変換し、比較レベルVc１７を基準
にコンパレータ１２にてパルス化することによ
り、前記各ギヤツプ９の位置に正確に対応した位
置信号１６を得ることができる。この様に、MR
素子１０と周期的信号磁界発生体とのｘ方向相対
運動量は、位置信号１６又はこれを電気的に処理
して得られる信号パルスをカウントすることによ
つて求められる。 In this embodiment, the operation when, for example, the MR element 10 and the periodic signal magnetic field generator make a relative movement in the x direction while flowing a current i in the direction of the arrow 7 through the conductive layer 4 will be explained with reference to FIG. do. In cross-sectional view a, when a current i flows through the conductor layer 4, the high permeability magnetic layers 2 and 5 formed to sandwich the conductor layer 4 are magnetized, and this magnetization creates a gap along the x direction. A periodic signal magnetic field 8 is generated near 9. At this time, the x component Hx of the signal magnetic field 8 at a position above or near the high permeability magnetic layer 5 and a predetermined distance D (spacing) in the Z direction from the conductor layer surface (xy plane) is As shown in FIG. 4b, a periodic signal magnetic field 14 is generated with a pitch P corresponding to the position of the gap 9 in the x direction. The corresponding MR
By converting the resistance change of the element 10 into a signal output 15 through a differential amplifier 11 and pulsating it in a comparator 12 based on a comparison level Vc17, a position signal 16 that accurately corresponds to the position of each gap 9 is obtained. be able to. In this way, MR
The relative momentum in the x direction between the element 10 and the periodic signal magnetic field generator is determined by counting the position signal 16 or signal pulses obtained by electrically processing the position signal 16.
ここで、本考案に用いられる材質と寸法につい
て述べると、基板１としてはガラス、セラミツ
ク、シリコン、フエライトなどが、高透磁率磁性
体層２，５としては厚さ数千オングストローム〜
数ミクロンのFe−Ni合金薄膜が、絶縁層３とし
ては数千オングストロームのSiO，SiO2，Al2O3
などの薄膜が、導電体層４としては厚さ数千オン
グストローム〜数ミクロンのCu，Auなどの薄膜
が適する。ギヤツプ長Ｇ及びピツチＰは用途に応
じて数ミクロン〜数百ミクロンの大きさに、ま
た、ギヤツプ９の数は数個〜数百個形成される。
これらは全て、薄膜形成技術で、ミクロンオーダ
ーの精度で正確に、しかも容易に形成できる。 Here, regarding the materials and dimensions used in the present invention, the substrate 1 is made of glass, ceramic, silicon, ferrite, etc., and the high permeability magnetic layers 2 and 5 have a thickness of several thousand angstroms.
A few microns of Fe-Ni alloy thin film is used as the insulating layer 3, and several thousand angstroms of SiO, SiO 2 , Al 2 O 3
A thin film such as Cu or Au having a thickness of several thousand angstroms to several microns is suitable as the conductive layer 4. The gap length G and pitch P are several microns to several hundred microns in size depending on the purpose, and the number of gaps 9 is several to several hundreds.
All of these can be formed accurately and easily with micron-order precision using thin film forming technology.
MR素子１０としては、Fe，Ni，Coなどを主
成分とする強磁性合金をシリコン単結晶、セラミ
ツク又はガラスなどの表面が滑らかな基板上に厚
さ数百オングスローム、ストライプ幅数〜数十ミ
クロン、長さ数十ミクロン〜数ミリメートルの形
状に両端の電気端子と共に、薄膜作製技術で作製
されたものが用いられる。また、MR素子１０と
導電体層表面とのスペーシングＤは、数千オング
ストローム〜数十ミクロンに設定される。 The MR element 10 is made of a ferromagnetic alloy mainly composed of Fe, Ni, Co, etc., on a substrate with a smooth surface such as silicon single crystal, ceramic, or glass, with a thickness of several hundred angstroms and a stripe width of several to several tens of microns. , a shape with a length of several tens of microns to several millimeters and electrical terminals at both ends, manufactured using thin film manufacturing technology, is used. Further, the spacing D between the MR element 10 and the surface of the conductor layer is set to several thousand angstroms to several tens of microns.
このように本考案で用いた周期的信号磁界印加
手段では周期的信号磁界８の強度及び周期は、各
構成要素の素材と薄膜形成技術によつてのみ決ま
る。従つて、従来の様に磁気記憶媒体に位置磁化
情報を書き込む工程を省けるので作製が容易であ
り、しかも書き込み斑なども考慮しなくてよいの
で、良品率が高いという特長を有する。その結
果、従来より簡便で高性能な位置検出器を提供す
ることができる。 As described above, in the periodic signal magnetic field applying means used in the present invention, the strength and period of the periodic signal magnetic field 8 are determined only by the material of each component and the thin film forming technique. Therefore, since the process of writing positional magnetization information on a magnetic storage medium as in the conventional method can be omitted, manufacturing is easy, and there is no need to take writing irregularities into account, so it has the advantage of a high yield rate. As a result, it is possible to provide a position detector that is simpler and has higher performance than the conventional one.
第１図は本考案の一実施例を示す斜視図、第２
図はMR素子の再生回路図、第３図はMR素子の
抵抗と信号磁界の関係を示す図、第４図は再生過
程を示す図である。
１……基板、２，５……高透磁率磁性体、３…
…絶縁層、４……導電体層、６……電流源、７…
…電流方向、８……信号磁界、９……ギヤツプ、
１０……MR素子、１１……差動増幅器、１２…
…コンパレータ、１３……MR静特性曲線、１４
……信号磁界のｘ成分、１５……差動増幅器出
力、１６……位置信号、１７……比較レベル。
Fig. 1 is a perspective view showing one embodiment of the present invention;
The figure is a reproducing circuit diagram of the MR element, FIG. 3 is a diagram showing the relationship between the resistance of the MR element and the signal magnetic field, and FIG. 4 is a diagram showing the reproducing process. 1... Substrate, 2, 5... High permeability magnetic material, 3...
...Insulating layer, 4...Conductor layer, 6...Current source, 7...
...Current direction, 8...Signal magnetic field, 9...Gap,
10...MR element, 11...Differential amplifier, 12...
...Comparator, 13...MR static characteristic curve, 14
...x component of signal magnetic field, 15...differential amplifier output, 16...position signal, 17...comparison level.
Claims (1)
絶縁層を介して、一定の周期で折り返した形状を
有する導電体層が形成されており、さらにその上
に絶縁層を介して高透磁率磁性体層がその導電体
層上では平行なギヤツプを有し、かつ、その導電
体層の側端部及び折り返しの溝をうめる様に形成
されており、前記導電体層の両端が電流源に接続
された周期的信号磁界発生体と、この周期的信号
磁界発生体との相対運動によつて前記ギヤツプ部
に生じる周期的信号磁界の変化を電気抵抗の変化
として感知できる様に配置された強磁性薄膜磁気
抵抗効果素子より成る磁気センサとから成ること
を特徴とする位置検出器。 On top of the high permeability magnetic layer formed on the substrate,
A conductive layer having a shape folded at a constant period is formed through an insulating layer, and a high permeability magnetic layer is formed on top of the insulating layer with parallel gaps formed on the conductive layer. and a periodic signal magnetic field generating body formed to fill the side edges and folded grooves of the conductive layer, both ends of the conductive layer being connected to a current source; and a magnetic sensor comprising a ferromagnetic thin film magnetoresistive element arranged so as to be able to sense changes in the periodic signal magnetic field generated in the gap portion as changes in electrical resistance due to relative movement with the signal magnetic field generator. A position detector featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981074219U JPH0125281Y2 (en) | 1981-05-22 | 1981-05-22 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1981074219U JPH0125281Y2 (en) | 1981-05-22 | 1981-05-22 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57186807U JPS57186807U (en) | 1982-11-27 |
| JPH0125281Y2 true JPH0125281Y2 (en) | 1989-07-28 |
Family
ID=29869997
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1981074219U Expired JPH0125281Y2 (en) | 1981-05-22 | 1981-05-22 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0125281Y2 (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747688Y2 (en) * | 1978-02-07 | 1982-10-20 | ||
| JPS606730Y2 (en) * | 1979-09-17 | 1985-03-05 | 三菱重工業株式会社 | Current position display device |
-
1981
- 1981-05-22 JP JP1981074219U patent/JPH0125281Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57186807U (en) | 1982-11-27 |
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