JPH01203219A - Production of thin filmlike oxide superconductor - Google Patents
Production of thin filmlike oxide superconductorInfo
- Publication number
- JPH01203219A JPH01203219A JP63026871A JP2687188A JPH01203219A JP H01203219 A JPH01203219 A JP H01203219A JP 63026871 A JP63026871 A JP 63026871A JP 2687188 A JP2687188 A JP 2687188A JP H01203219 A JPH01203219 A JP H01203219A
- Authority
- JP
- Japan
- Prior art keywords
- oxide superconductor
- sputtering
- parts
- weight
- powder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002887 superconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 239000000843 powder Substances 0.000 claims abstract description 31
- 238000004544 sputter deposition Methods 0.000 claims abstract description 17
- 238000005477 sputtering target Methods 0.000 claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000203 mixture Substances 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 12
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 claims abstract 2
- 239000002131 composite material Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000012212 insulator Substances 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 abstract description 6
- 229910014472 Ca—O Inorganic materials 0.000 abstract 1
- 229910001111 Fine metal Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、基板上にスパッタリングして薄膜酸化物超伝
導体を形成する場合に採用される薄膜酸化物超伝導体の
製造方法に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Application Field) The present invention provides a method for forming a thin film oxide superconductor that is employed when forming a thin film oxide superconductor by sputtering on a substrate. Regarding the manufacturing method.
（従来の技術）
ある種の金属スは合金が絶対温度零度近傍まで冷却され
ると、その金属又は合金の電気抵抗が零になることは古
くから知られており、最近では、ペロブスカイト構造の
酸化物もこのような超伝導特性を示すことが報告されて
いる。(Prior art) It has been known for a long time that the electrical resistance of certain metals or alloys becomes zero when the alloy is cooled to near absolute zero. It has been reported that objects also exhibit such superconducting properties.
そこで、この種の酸化物を基板上にスパッタリングして
超伝導体として利用するようにしている。Therefore, this type of oxide is sputtered onto a substrate and used as a superconductor.
そして、従来はＹ Ｂ６ Ｃｕ Ｏ系の酸化物超
伝導体組成材料を基板上にスパッタリングして薄膜酸化
物超伝導体を形成する場合、Ｃｕ組成の一部の蒸発分を
考慮して、通常、化学量論的組成よりもＣｕ組成の多い
スパッタリングターゲットを便用していた。Conventionally, when forming a thin film oxide superconductor by sputtering a YB6CuO-based oxide superconductor composition material onto a substrate, taking into account the evaporation of a part of the Cu composition, A sputtering target with a Cu composition higher than the stoichiometric composition was conveniently used.
（発明が解決しようとする課題）
上記した従来方法では、Ｃｕ組成の多いスパッタリング
ターゲットを使用する必要上から、このターゲットはＣ
ｕ組成の多少（こより絶縁物ないし半導体となり、直流
スパッタリングには適さなかった。(Problems to be Solved by the Invention) In the conventional method described above, since it is necessary to use a sputtering target with a high Cu composition, this target is
Due to its slightly different u composition, it became an insulator or a semiconductor, making it unsuitable for DC sputtering.
更にこの場合、Ｃｕ組成の一部が蒸発するため、酸化物
超伝導体としての特性を著しく阻害する欠点を有してい
た。Furthermore, in this case, a part of the Cu composition evaporates, resulting in a drawback that the properties as an oxide superconductor are significantly impaired.
本発明は上記問題点を解決するためになされたものであ
り、直流スパッタリングの適用が支障なくでき、かつ化
学量論通りの酸化物超伝導体を得ることの可能な薄膜酸
化物超伝導体の製造方法を提供することを目的としてい
る。The present invention was made in order to solve the above problems, and provides a thin film oxide superconductor that can be applied to DC sputtering without any problems and that can obtain an oxide superconductor with stoichiometry. The purpose is to provide a manufacturing method.
［発明の構成］
（課題を解決するための手段）
第１の発明は、薄膜酸化物超伝導体の製造方法において
、Ｙ−Ｂａ−Ｃμ−〇系の酸化物超伝導体組成材料の１
００重量部に対し、Ｃｕの微粉末を５〜３０重量部添加
して細密に混合することによってスバ・ツタリングター
ゲットを栖成し、このスパッタリングターゲットを用い
て基板上にスパッタリングによる薄膜超伝導体を形成す
るようにした。[Structure of the Invention] (Means for Solving the Problems) The first invention provides a method for producing a thin film oxide superconductor, in which one of Y-Ba-Cμ-〇-based oxide superconductor composition materials is used.
A sputtering target is formed by adding 5 to 30 parts by weight of fine Cu powder to 00 parts by weight and mixing them finely, and using this sputtering target, a thin film superconductor is sputtered onto a substrate. .
第２の発明は、Ｙ−Ｂａ−Ｃｕ、−０系の酸化物超伝導
体組成材料の１００重量部に対し、Ｃｕの徴扮木とＡ、
、Ａｕのうちの少なくとも１種以上の微粉末とを合量で
５〜３０重量部添加して細密に混合することによってス
パッタリングターゲットを構成し、このスパッタリング
ターゲットを用いて基板上にスパッタリングによる薄膜
超伝導体を形成するようにした。The second invention is based on 100 parts by weight of Y-Ba-Cu, -0-based oxide superconductor composition material, and a mixture of Cu and A,
A sputtering target is formed by adding a total of 5 to 30 parts by weight of at least one fine powder of Au, and finely mixing the mixture. Now forms a conductor.
（作用）
第１の発明では、Ｙ Ｂａ Ｃｕ Ｏ系の酸化物
超伝導体組成材料の１００重量部に対し、５〜３０重量
部のＣｕの微粉末を添加して、これを細密に混合した酸
化物超伝導体スパッタリングターゲットを用い、基板上
にスパッタリングするので、スパッタリングに際して特
にＣμが金属微粉末として存在し、かつＣｕが化学量論
組成よりも多く存在しているために、交流スパッタリン
グのみならず、直流スパッタリングによっても基板上に
超伝導体が絶縁物ないし半導体となることなく、酸化物
超伝導体となって形成される。(Function) In the first invention, 5 to 30 parts by weight of Cu fine powder was added to 100 parts by weight of the Y Ba Cu O-based oxide superconductor composition material, and this was mixed finely. Since sputtering is performed on the substrate using an oxide superconductor sputtering target, Cμ is present as a fine metal powder during sputtering, and Cu is present in a larger amount than the stoichiometric composition. First, even by direct current sputtering, the superconductor is formed on the substrate as an oxide superconductor without becoming an insulator or a semiconductor.
Ｘ、Ｃｕの金属微粉末の存在によりターゲットの熱伝導
率が改良され、熱歪によるクラックの発生を抑止する。The presence of fine metal powders of X and Cu improves the thermal conductivity of the target and suppresses the occurrence of cracks due to thermal strain.
第２の発明では、Ｙ Ｂａ Ｃｕ Ｏ系の酸化物
超伝導体組成材料の１００重量部に対し、Ｃｕの微粉末
とＡｙ、Ａｕのうちの少なくとも１″！Ｊｉ以上の微粉
末とを合量で５〜３０重量部添加して、これを細密に混
合した酸化物超伝導体スパッタリングターゲットを用い
、基板上にスパッタリングするものであるから、スパッ
タリングに際して特にＣμが金属微粉末として存在し、
かつＣｕが化学量論組成よりも多く存在しているほか、
ＡＰ、Ａｕのうちの少なくとも１種以上の微粉末も存在
しているために、スパッタリングターゲットの導電性が
改善され、交流スパッタリングのみならず、直流スパッ
タリングによっても基板上に超伝導体が絶縁物ないし半
導体となることなく、酸化物超伝導体となって形成され
る。In the second invention, a total amount of Cu fine powder and Ay or Au fine powder of at least 1"!Ji or more is added to 100 parts by weight of the Y Ba Cu O-based oxide superconductor composition material. Since 5 to 30 parts by weight of Cμ is added to the substrate and sputtered onto the substrate using an oxide superconductor sputtering target in which Cμ is finely mixed, Cμ is present as a fine metal powder during sputtering.
In addition, Cu is present in a larger amount than the stoichiometric composition,
Since the fine powder of at least one of AP and Au is also present, the conductivity of the sputtering target is improved, and the superconductor is formed on the substrate by not only AC sputtering but also DC sputtering. It is formed as an oxide superconductor without becoming a semiconductor.
く実１１色ＰＩ ＞ 以下、実施例を説明する。Fruit 11 colors PI> Examples will be described below.
先ず、Ｙ−Ｂａ−Ｃμ−〇系の酸化物超伝導体粉末１０
０重量部に対して、５重量部未満（４重置部）のｅｕの
微粉末を添加し、これらを混合してスパッタリングター
ゲットを構成した。First, Y-Ba-Cμ-〇-based oxide superconductor powder 10
Less than 5 parts by weight (4 parts) of eu fine powder was added to 0 parts by weight, and these were mixed to form a sputtering target.
この状態にて基板上にスパッタリングしたが、この場合
はＣｕの添加した効果が不確実になり、時には絶縁物な
いし半導体となることがあった。Sputtering was performed on the substrate in this state, but in this case, the effect of adding Cu became uncertain, and in some cases it became an insulator or a semiconductor.
Ｘ、熱伝導度の改良も十分でなく、時にはターゲットに
クラックが発生した。X. Improvement in thermal conductivity was not sufficient, and cracks sometimes occurred in the target.
一方、Ｃｕの微粉末の呈を３０重量部以上（５５と６５
重量部）として、前記同様の各処理を行なった。On the other hand, the appearance of Cu fine powder was 30 parts by weight or more (55 and 65 parts by weight).
(parts by weight), the same treatments as above were performed.
この場合はＣｕの微粉末金属の導体特性によって、前記
とは逆に、いずれの場合も導体となることがあり、熱伝
導度も改良され、クラックの発生は抑止されたが、超伝
導特性の良い薄膜は得られなかった。In this case, due to the conductive properties of the Cu fine powder metal, contrary to the above, it may become a conductor in either case, and the thermal conductivity was improved and the occurrence of cracks was suppressed, but the superconducting properties A good thin film was not obtained.
以上の結果、Ｃｕ微粉末の添加量は、Ｙ−Ｂａ−Ｃμｍ
０系の酸化物超伝導体粉末１００重量部に対して、５〜
３０重量部が最適であることがわがっな。As a result, the amount of Cu fine powder added is Y-Ba-Cμm
5 to 100 parts by weight of 0-based oxide superconductor powder
It has been found that 30 parts by weight is optimal.
次に、Ｙ Ｂｇ Ｃｕ Ｏ系の酸化物超伝導体粉
末１００重量部に対して、Ｃｕの微粉末とＡｊの微粉末
との合量が５１呈部未満（Ｃｕ ３．Ａ、 １．合計４
重量部）を添加し、これらを混合してスパッタリングタ
ーゲットを構成した。Next, with respect to 100 parts by weight of Y Bg Cu O-based oxide superconductor powder, the total amount of Cu fine powder and Aj fine powder is less than 51 parts (Cu 3.A, 1. Total 4 parts).
parts by weight) were added and mixed to form a sputtering target.
この状態にて、基板−ヒにスパッタリングしたが、この
場合はＣｕの微粉末とＡＩの微粉末とを添加した効果が
不確実になり、時には絶縁物となることがわかった。In this state, sputtering was performed on the substrate, but it was found that in this case, the effect of adding fine Cu powder and fine AI powder was uncertain, and sometimes an insulator was formed.
一方、Ｃｕの微粉末とＡ２の微粉末との合量が３０重量
部以上（５５，６５各重量部）として、前記同様の各処
理を行なった。On the other hand, the same treatments as above were performed with the total amount of Cu fine powder and A2 fine powder being 30 parts by weight or more (55 and 65 parts by weight, respectively).
この場合は、Ｃｕ及びＡ、の微粉末の導体特性によって
、前記とは逆に、いずれの場合も導体となることがあっ
た。In this case, due to the conductive properties of the fine powders of Cu and A, they could become conductors in either case, contrary to the above.
なお、Ａ２に代えて、Ａｕについても行なったが、Ａ１
の場合と同様な結果が得られた。In addition, instead of A2, this was also carried out for Au, but A1
Similar results were obtained.
以上の結果、Ｃｕ１ｆｉｊｊ粉末とＡ）、Ａｕのうちの
少なくとも１種の微粉末との合量の添加量は、Ｙ−Ｂａ
−ｃｔａ−ｏ系の酸化物超伝導体粉末１００重量部に
対して、５〜３０重呈部がＭ適であるることがわかった
。As a result of the above, the total addition amount of Cu1fijj powder and at least one kind of fine powder of A) and Au is Y-Ba
It has been found that 5 to 30 parts by weight is suitable for M per 100 parts by weight of -cta-o based oxide superconductor powder.
［発明の効果］
以上説明したように、本発明によれば直流スパッタリン
グによってもスパッタリングターゲットが絶縁物ないし
半導体となることはなく、化学量論通りの酸化物超伝導
体を得ることが可能となる。[Effects of the Invention] As explained above, according to the present invention, the sputtering target does not become an insulator or a semiconductor even by direct current sputtering, and it is possible to obtain an oxide superconductor with stoichiometry. .
特許出願人 秩父セメント株式会社 代理人 弁理士 石 井 紀 男Patent applicant: Chichibu Cement Co., Ltd. Agent Patent Attorney Norio Ishii
Claims (2)
の１００重量部に対し、Ｃｕの微粉末を５〜３０重量部
添加して細密に混合することによってスパッタリングタ
ーゲットを構成し、前記スパッタリングターゲットを用
いて基板上にスパッタリングによる薄膜超伝導体を形成
することを特徴とする薄膜酸化物超伝導体の製造方法。(1) A sputtering target is constructed by adding 5 to 30 parts by weight of Cu fine powder to 100 parts by weight of the Y-Ba-Cu-O-based oxide superconductor composition material and mixing the mixture finely. . A method for producing a thin film oxide superconductor, comprising forming a thin film superconductor on a substrate by sputtering using the sputtering target.
の１００重量部に対し、Ｃｕの微粉末とＡｇ、Ａｕ、Ｐ
ｔのうちの少なくとも１種以上の微粉末とを合量で５〜
３０重量部添加して細密に混合することによってスパッ
タリングターゲットを構成し、前記スパッタリングター
ゲットを用いて基板上にスパッタリングによる薄膜超伝
導体を形成することを特徴とする薄膜酸化物超伝導体の
製造方法。(2) Cu fine powder and Ag, Au, P
The total amount of at least one fine powder of t is 5 to 5.
A method for producing a thin film oxide superconductor, comprising adding 30 parts by weight and mixing minutely to form a sputtering target, and using the sputtering target to form a thin film superconductor on a substrate by sputtering. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63026871A JP2601676B2 (en) | 1988-02-08 | 1988-02-08 | Method for producing thin-film oxide superconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63026871A JP2601676B2 (en) | 1988-02-08 | 1988-02-08 | Method for producing thin-film oxide superconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01203219A true JPH01203219A (en) | 1989-08-16 |
| JP2601676B2 JP2601676B2 (en) | 1997-04-16 |
Family
ID=12205356
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63026871A Expired - Lifetime JP2601676B2 (en) | 1988-02-08 | 1988-02-08 | Method for producing thin-film oxide superconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2601676B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049452A (en) * | 1987-12-09 | 1991-09-17 | Mitsubishi Metal Corporation | Target member used for formation of superconducting film |
| US5077269A (en) * | 1988-12-07 | 1991-12-31 | Mitsubishi Metal Corporation | Sputtering target used for forming quinary superconductive oxide |
-
1988
- 1988-02-08 JP JP63026871A patent/JP2601676B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5049452A (en) * | 1987-12-09 | 1991-09-17 | Mitsubishi Metal Corporation | Target member used for formation of superconducting film |
| US5077269A (en) * | 1988-12-07 | 1991-12-31 | Mitsubishi Metal Corporation | Sputtering target used for forming quinary superconductive oxide |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2601676B2 (en) | 1997-04-16 |
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