JPH01202801A - Manufacture of nonlinear voltage resistor - Google Patents
Manufacture of nonlinear voltage resistorInfo
- Publication number
- JPH01202801A JPH01202801A JP63026578A JP2657888A JPH01202801A JP H01202801 A JPH01202801 A JP H01202801A JP 63026578 A JP63026578 A JP 63026578A JP 2657888 A JP2657888 A JP 2657888A JP H01202801 A JPH01202801 A JP H01202801A
- Authority
- JP
- Japan
- Prior art keywords
- cooling
- resistor
- firing
- temperature
- oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 238000001816 cooling Methods 0.000 claims abstract description 35
- 238000010304 firing Methods 0.000 claims abstract description 27
- 238000012360 testing method Methods 0.000 claims abstract description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 239000000843 powder Substances 0.000 claims description 8
- 239000011787 zinc oxide Substances 0.000 claims description 7
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 5
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000654 additive Substances 0.000 claims description 4
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 4
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000005259 measurement Methods 0.000 claims description 2
- 230000006866 deterioration Effects 0.000 abstract description 3
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- DKPFZGUDAPQIHT-UHFFFAOYSA-N butyl acetate Chemical compound CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 4
- 239000011268 mixed slurry Substances 0.000 description 4
- 239000011230 binding agent Substances 0.000 description 3
- 239000011247 coating layer Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 238000011088 calibration curve Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- 238000011835 investigation Methods 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001804 emulsifying effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000001694 spray drying Methods 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
(産業上の利用分野)
この発明は酸化亜鉛を主成分とする電圧非直線抵抗体の
特性、とくに該抵抗体に電流1mAを流す際に必要な電
圧(Vl、A)を、その製造過程において所望の値(規
格)に設定するのに有利な方法について提案しようとす
るものである。Detailed Description of the Invention (Field of Industrial Application) This invention is concerned with the characteristics of a voltage nonlinear resistor whose main component is zinc oxide, particularly the voltage (Vl, A) required when a current of 1 mA flows through the resistor. ) to a desired value (standard) during the manufacturing process.
(従来の技術)
従来から、酸化亜鉛を主成分としBizl)1.5b2
03 +5iOz、Co=O=、 MnO2等の少量の
添加物を含有した素子は優れた電圧非直線性を示すこと
が広(知られており、その性質を利用して避雷器等に使
用されている。(Conventional technology) Conventionally, zinc oxide is the main component and Bizl) 1.5b2
03 It is widely known that elements containing small amounts of additives such as +5iOz, Co=O=, MnO2, etc. exhibit excellent voltage nonlinearity, and are used in lightning arresters etc. by taking advantage of this property. .
かような電圧非直線抵抗体は、通常上記の成分よりなる
混合造粒粉を所望の形状に加圧成形したのち焼成し、得
られた焼結体に電極を付設する各工程を経て製造され、
とくに該抵抗体のVl、Aは焼成時の処理温度あるいは
処理時間を適宜変更することによって調整していた。Such a voltage nonlinear resistor is usually manufactured through the steps of press-molding a mixed granulated powder made of the above ingredients into a desired shape, firing it, and attaching electrodes to the resulting sintered body. ,
In particular, Vl and A of the resistor were adjusted by appropriately changing the processing temperature or processing time during firing.
(発明が解決しようとする課題)
ところで電圧非直線抵抗体を製造するに際し、上述した
ようにV、、Aを所望の値に設定すべく焼成時の処理温
度や処理時間をただ単に変更するだけでは、電圧非直線
抵抗体を構成する酸化亜鉛の粒成長の不均一化、ビスマ
ス、アンチモン等の拡散の相違、ボイド等の発生が避け
られず、電気的緒特性の著しいばらつきをきたす不利が
あった。(Problem to be Solved by the Invention) By the way, when manufacturing a voltage nonlinear resistor, as mentioned above, in order to set V, , A to desired values, it is necessary to simply change the processing temperature and processing time during firing. However, non-uniform grain growth of zinc oxide that constitutes the voltage non-linear resistor, differences in the diffusion of bismuth, antimony, etc., and the occurrence of voids are unavoidable, resulting in significant variations in electrical characteristics. Ta.
電圧非直線抵抗体のV、、A値をその他の電気的緒特性
の劣化等を来すうれいなしに所期した値に設定できる効
果的な方法を提案することがこの発明の目的である。It is an object of the present invention to propose an effective method for setting the V, , A values of a voltage nonlinear resistor to desired values without causing deterioration of other electrical characteristics.
(課題を解決するための手段)
この発明は酸化亜鉛を主成分として、少なくとも酸化ビ
スマス、酸化アンチモンおよび酸化けい素を含む添加物
とからなる混合造粒粉を加圧成形したのち焼成すること
により電圧非直線抵抗体を製造するに際し、焼成を施し
た電圧非直線抵抗体用の素体の冷却過程における少なく
とも焼成温度から850℃に至るまでの間を、先行試験
の測定結果に基づいて決定される冷却速度に設定し冷却
することを特徴とする電圧非直−抵抗体の製造方法であ
る。(Means for Solving the Problems) This invention is achieved by press-molding a mixed granulated powder consisting of zinc oxide as a main component and additives containing at least bismuth oxide, antimony oxide, and silicon oxide, and then firing the powder. When manufacturing a voltage nonlinear resistor, the cooling process of the fired voltage nonlinear resistor element from at least the firing temperature to 850°C is determined based on the measurement results of previous tests. This is a method for manufacturing a voltage non-linear resistor, characterized in that cooling is performed at a cooling rate set to a certain temperature.
なお焼成後の素体に微小クランクが生じるのを防止する
ために上記の方法における冷却速度の上限は300℃/
hrとするのが好ましい。In order to prevent minute cranks from forming in the element body after firing, the upper limit of the cooling rate in the above method is 300℃/
It is preferable to set it as hr.
(作 用)
さて電圧非直線抵抗体の製造において、焼成後の冷却過
程における少なくとも焼成温度から850℃に至るまで
の間の冷却速度を後述する先行試験によるデータに対応
させて決定しその冷却速度で冷却することで抵抗体の電
気的特性のばらつきを回避しつつ目標とするVl−に設
定できる理由は、焼成温度を変更すると粒成長速度に著
るしい差が生じ特性のバラツキを生ずるため、焼成温度
からの冷却における均一な粒成長を液相の存在する85
0℃まで制御することによりバラツキの少ない良好な素
子を製造することができるためと考えられる。(Function) Now, in the production of voltage nonlinear resistors, the cooling rate during the cooling process after firing, at least from the firing temperature to 850°C, is determined in accordance with the data from the previous test described below. The reason why it is possible to set the target Vl- while avoiding variations in the electrical properties of the resistor by cooling the resistor at The presence of a liquid phase ensures uniform grain growth upon cooling from the firing temperature.85
This is thought to be because by controlling the temperature down to 0° C., it is possible to manufacture good elements with less variation.
なお、850℃未満で冷却速度を変化させると粒界層に
含まれる酸化ビスマスの結晶相に差が生じて特性が変化
するおそれがあり好ましくない。このため、それ未満の
温度域では、品質、特性に影響を与えない30〜60℃
/hr程度の冷却速度に維持するのが望ましい。Note that changing the cooling rate below 850° C. is not preferable because there is a risk that a difference will occur in the crystal phase of bismuth oxide contained in the grain boundary layer and the characteristics will change. For this reason, in the temperature range below 30 to 60 degrees Celsius, which does not affect quality or characteristics.
It is desirable to maintain the cooling rate at about /hr.
以下、電圧非直線抵抗体を製造する過程で■、八を設定
する場合の要領につき詳細に説明する。Hereinafter, the procedure for setting (1) and (8) in the process of manufacturing a voltage nonlinear resistor will be explained in detail.
まず所定の粒度に調整した酸化亜鉛の主原料と所定粒度
に調整した酸化ビスマス、酸化コバルト、酸化マンガン
、酸化アンチモン、酸化クロム、酸化ケイ素、酸化ニッ
ケル等よりなる添加物および好ましくは銀を含むホウケ
イ酸ビスマスガラスの所定量を混合する。次いでこれら
の原料粉末に対して所定量のポリビニルアルコール水溶
液および酸化アルミニウム源として硝酸アルミニウム溶
液の所定量を添加する。この混合操作は好ましくは乳化
機を用いる。First, the main raw material of zinc oxide adjusted to a predetermined particle size, additives such as bismuth oxide, cobalt oxide, manganese oxide, antimony oxide, chromium oxide, silicon oxide, nickel oxide, etc. adjusted to a predetermined particle size, and borosilicate containing preferably silver. Mix a predetermined amount of acid bismuth glass. Next, a predetermined amount of an aqueous polyvinyl alcohol solution and a predetermined amount of an aluminum nitrate solution as an aluminum oxide source are added to these raw material powders. This mixing operation preferably uses an emulsifying machine.
次に好ましくは200mmHg以下の真空度で減圧脱気
を行い混合泥漿を得る。混合泥漿の水分量は30〜35
−t%程度に、またその混合泥漿の粘度は100 cp
±50とするのが好ましい。Next, deaeration is performed under reduced pressure, preferably at a vacuum level of 200 mmHg or less, to obtain a mixed slurry. The moisture content of mixed slurry is 30-35
-t%, and the viscosity of the mixed slurry is 100 cp.
It is preferable to set it to ±50.
次に得られた混合泥漿を噴霧乾燥装置に供給して平均粒
径50〜150μm、好ましくは80〜120μmで、
水分量が0.5〜2.Owt%、より好ましくは0.9
〜1.5 wt%の造粒粉を造粒する。Next, the obtained mixed slurry is fed to a spray drying device so that the average particle size is 50 to 150 μm, preferably 80 to 120 μm,
Moisture content is 0.5-2. Owt%, more preferably 0.9
-1.5 wt% granulated powder is granulated.
次に得られた造粒粉を、成形工程において、成形圧力8
00〜1000kg / cm ”の下で所定の形状に
成形する。そしてその成形体を昇降温度50〜70℃/
hrで800〜1000℃1保持時間1〜5時間という
条件で仮焼成して結合剤を飛散除去する。Next, the obtained granulated powder was subjected to a molding process at a molding pressure of 8
00~1000kg/cm'' and molded into a predetermined shape.Then, the molded body is heated at a rising/lowering temperature of 50~70℃/
The binder is scattered and removed by calcining at 800 to 1000° C. for 1 to 5 hours.
次に、仮焼成した仮焼体の側面に絶縁被覆層を形成する
。絶縁被覆層は具体的にはビスマス化合物、好ましくは
酸化ビスマス、アンチモン化合物、好ましくは酸化アン
チモン、ケイ素化合物、好ましくは酸化ケイ素、亜鉛化
合物、好ましくは酸化亜鉛等の所定量に有機結合剤とし
てエチルセルロース、ブチルカルピトール、酢酸nブチ
ル等を加えた酸化物ペーストよりなるものとし、これを
100〜300μmの厚さで仮焼体側面に塗布する。Next, an insulating coating layer is formed on the side surface of the calcined body. Specifically, the insulating coating layer contains a predetermined amount of a bismuth compound, preferably bismuth oxide, an antimony compound, preferably antimony oxide, a silicon compound, preferably silicon oxide, a zinc compound, preferably zinc oxide, and ethyl cellulose as an organic binder. It is made of an oxide paste containing butyl calpitol, n-butyl acetate, etc., and is applied to the side surface of the calcined body to a thickness of 100 to 300 μm.
次にこれを30〜60”C/hrO昇温速度で1000
〜1300、好ましくは1100〜1250℃まで加熱
し、その温度範囲で保持時間2〜7時間という条件で本
焼成する。そして次に、本焼成するに先立って実施した
同一ロットの素子の先行試験により得られたデータに従
い、前記本焼成後の冷却速度を設定し、所期したV、、
A値となるように焼成温度から850℃までの間を冷却
し、さらに850℃未満においては好ましくは30〜6
0℃/hrで室温まで冷却する。Next, this was heated to 1000 at a heating rate of 30 to 60"C/hrO.
-1300C, preferably 1100-1250C, and main firing is carried out under the conditions of holding in that temperature range for 2 to 7 hours. Next, the cooling rate after the main firing is set according to the data obtained from the preliminary test of the same lot of elements conducted prior to the main firing, and the desired V.
Cool from the firing temperature to 850°C so that the A value is obtained, and further below 850°C, preferably 30 to 6
Cool to room temperature at 0°C/hr.
ここに焼成温度から850℃に至るまでの冷却は、具体
的に、先行試験にて求めた素子のVl、Aが目標とする
■、Aより高い場合に結晶粒の成長を促進すべくその間
の冷却速度を小に、一方目標とする値よりも低い場合に
は、結晶粒の成長を促進すべく、その間の冷却速度が大
となるように制御する。Here, the cooling from the firing temperature to 850°C is specifically performed in order to promote the growth of crystal grains when the Vl and A of the element determined in the previous test are higher than the target ■ and A. The cooling rate is controlled to be low, and if it is lower than the target value, the cooling rate is controlled to be high in order to promote the growth of crystal grains.
この発明ではとくに、上記の温度域における冷却速度を
制御することでVIm+八を容易に変更できるが、冷却
速度を速くした場合に電圧非直線抵抗体に微小クラック
が生じたり、また著るしくおそくすることは生産性およ
び省エネルギの観点からは不利である。よってV、、A
の変更、調整は±10%以内とするのが望ましい。In this invention, in particular, VIm+8 can be easily changed by controlling the cooling rate in the above temperature range. It is disadvantageous from the viewpoint of productivity and energy saving to do so. Therefore, V,,A
It is desirable that the change or adjustment should be within ±10%.
なお、ガラス粉末に有機結合剤としてエチルセルロース
、ブチルカルピトール、酢酸nブチル等を加えたガラス
ペーストを前記絶縁被覆層上に100〜300 u m
の厚さに塗布し、空気中で昇降温速度100〜200℃
/hr 、 400〜600℃で0.5〜2時間という
条件で熱処理することによりガラス層を形成すると好ま
しい。In addition, a glass paste prepared by adding ethyl cellulose, butyl calpitol, n-butyl acetate, etc. as an organic binder to glass powder was applied to the insulating coating layer at a thickness of 100 to 300 μm.
coating to a thickness of 100 to 200℃ in air
It is preferable to form the glass layer by heat-treating the glass layer at 400 to 600°C for 0.5 to 2 hours.
そして、最後に得られた素体の電極形成面を平滑に研摩
し、その面に例えばアルミニウムの如き電極をメアリコ
ンによって設けて電圧非直線抵抗体を得る。Finally, the electrode-forming surface of the obtained element body is polished smooth, and an electrode made of, for example, aluminum is provided on that surface using a metallcon to obtain a voltage nonlinear resistor.
(実施例)
目標(7)Vl、A値を4.5 kVとする直径47
mm、厚さ22.5mmの電圧非直線抵抗体を上述した
要領に従って複数個製造し、得られた各素子の■I−1
電圧非直線指数αおよび開閉サージ放電耐量破壊率を測
定した。(Example) Target (7) Diameter 47 with Vl and A value of 4.5 kV
A plurality of voltage nonlinear resistors each having a thickness of 22.5 mm and a thickness of 22.5 mm were manufactured according to the above-mentioned procedure, and each of the obtained elements had ■I-1.
The voltage nonlinearity index α and the breakdown rate of switching surge discharge capacity were measured.
なおV、lIAが4.5 kVの抵抗体を得るには、
焼成後の冷却過程における少なくとも焼成温度から85
0℃に至るまでの間の冷却速度は、同一組成における先
行試験として焼成温度1220″C1保持時間5hr、
冷却速度60℃/hrの条件のもとに製造した抵抗体の
vlAの値が4.7 kVであったので、その値を検
量線と照合し、40″C/hrとした。なお、検量線は
予じめ同一組成の素子を用い、昇温速度、焼成温度及び
保持時間を前記の条件に一定とし、焼成温度より850
″Cまでの冷却速度を段階的に変化させそれに対応する
V、、Aの値を測定し、その値により検量線を作成した
ものである。In addition, to obtain a resistor with V and lIA of 4.5 kV,
85 from at least the firing temperature in the cooling process after firing
The cooling rate until the temperature reached 0°C was as follows: a firing temperature of 1220″ C1 holding time of 5 hr as a preliminary test with the same composition;
The value of vlA of the resistor manufactured under the conditions of cooling rate 60°C/hr was 4.7 kV, so that value was compared with the calibration curve and set as 40''C/hr. For the wire, use elements of the same composition in advance, keep the heating rate, firing temperature, and holding time constant under the above conditions, and increase the temperature by 850° from the firing temperature.
The cooling rate to "C" was changed stepwise, the corresponding values of V, and A were measured, and a calibration curve was created using the values.
表−1に、焼成および冷却過程における処理条件を従来
法を適用する場合の条件とともにまとめて示し、表−2
にその調査結果を示す。Table 1 summarizes the processing conditions in the firing and cooling processes together with the conditions when applying the conventional method, and Table 2
The results of the survey are shown below.
なお、表−2中の電圧非直線指数αはI =KVa(I
:電流、V:電圧、K:比例定数)に基づきV、、Aと
V、。。μAから求め、また開閉サージ放電耐量破壊率
(%)は100OA 、l100Aおよび120OAの
電流を2msの電流波形で20回繰り返し印加した場合
に破壊した割合を示した。Note that the voltage nonlinear index α in Table 2 is I = KVa (I
: current, V: voltage, K: proportionality constant) based on V, , A and V,. . It was determined from μA, and the breakdown rate (%) of the switching surge discharge withstand capacity showed the percentage of breakdown when currents of 100OA, 1100A, and 120OA were repeatedly applied 20 times with a current waveform of 2ms.
表−1
表−2より、この発明に従って製造された電圧非直線抵
抗体は、所期したV、、Aに極めて近い値に設定できる
とともに、そのばらつきも小さくしかも特性が良好であ
ることが確かめられた。Table 1 From Table 2, it is confirmed that the voltage nonlinear resistor manufactured according to the present invention can be set to a value extremely close to the desired V, A, and has small variations and good characteristics. It was done.
また、表−3に、先行試験より得られたデータにて決定
される冷却速度に調整すべき温度範囲における下限値を
、種々変更して得た電圧非直線抵抗体のV、、A、電圧
非直線指数αおよび開閉サージ放電耐量破壊率の調査結
果を、さらに表−4に、焼成温度から850℃に至るま
での冷却速度を種々変更して得た電圧非直線抵抗体のV
、、A、電圧非直線指数αおよび開閉サージ耐量破壊率
の調査結果をそれぞれ示す。In addition, Table 3 shows the V, A, voltage of the voltage nonlinear resistor obtained by variously changing the lower limit value in the temperature range that should be adjusted to the cooling rate determined by the data obtained from the previous test. Table 4 shows the investigation results of the nonlinear index α and the breakdown rate of switching surge discharge capacity, and the V of the voltage nonlinear resistor obtained by variously changing the cooling rate from the firing temperature to 850°C.
, , A shows the investigation results of voltage non-linearity index α and switching surge withstand breakdown rate, respectively.
表−3においては各温度に至るまでの冷却速度はすべて
120″C/hrに、また各温度以降はすべて60℃/
hrとし、表−4においては850 ”C以降の冷却速
度はすべて60″C/hrとした。なお、焼成は表−3
,4とも1225℃15時間保持した。In Table 3, the cooling rate up to each temperature is all 120"C/hr, and after each temperature is all 60"C/hr.
In Table 4, all cooling rates after 850"C were set to 60"C/hr. The firing details are shown in Table 3.
, 4 were both held at 1225°C for 15 hours.
表−3および表−4より、焼成温度から850℃に至る
までの間を適切な冷却速度で冷却しなければ、目標とす
るV、、Aに設定できず、所期した品質の電圧非直線抵
抗体を得ることができないのが明らかである。From Tables 3 and 4, it is clear that unless cooling is done at an appropriate cooling rate from the firing temperature to 850°C, the target V, A cannot be set, and the voltage non-linearity will result in the desired quality. It is clear that no resistor can be obtained.
(発明の効果)
この発明によれば電気的緒特性や品質の劣化を来すこと
なしに電圧非直線抵抗体のV、、Aを所望の値に設定で
きる。(Effects of the Invention) According to the present invention, V, A of the voltage nonlinear resistor can be set to desired values without deteriorating electrical characteristics or quality.
特許出願人 日本碍子株式会社Patent applicant: Nippon Insulator Co., Ltd.
Claims (1)
、酸化アンチモンおよび酸化けい素を含む添加物とから
なる混合造粒粉を加圧成形したのち焼成することにより
電圧非直線抵抗体を製造するに際し、 焼成を施した電圧非直線抵抗体用の素体の 冷却過程における少なくとも焼成温度から 850℃に至るまでの間を、先行試験の測定結果に基づ
いて決定される冷却速度に設定し冷却することを特徴と
する電圧非直線抵抗体の製造方法。1. When producing a voltage nonlinear resistor by press-molding a mixed granulated powder consisting of zinc oxide as a main component and additives containing at least bismuth oxide, antimony oxide, and silicon oxide, firing is performed. In the cooling process of the applied voltage nonlinear resistor element body, at least from the firing temperature to 850 ° C., the cooling rate is set at a cooling rate determined based on the measurement results of the preceding test. A method for manufacturing a voltage nonlinear resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63026578A JPH01202801A (en) | 1988-02-09 | 1988-02-09 | Manufacture of nonlinear voltage resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63026578A JPH01202801A (en) | 1988-02-09 | 1988-02-09 | Manufacture of nonlinear voltage resistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01202801A true JPH01202801A (en) | 1989-08-15 |
Family
ID=12197433
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63026578A Pending JPH01202801A (en) | 1988-02-09 | 1988-02-09 | Manufacture of nonlinear voltage resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01202801A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62263608A (en) * | 1986-05-12 | 1987-11-16 | 日本碍子株式会社 | Manufacture of voltage nonlinear resistance element |
-
1988
- 1988-02-09 JP JP63026578A patent/JPH01202801A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62263608A (en) * | 1986-05-12 | 1987-11-16 | 日本碍子株式会社 | Manufacture of voltage nonlinear resistance element |
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