JPH01201095A - Diamond carbon film and production thereof - Google Patents
Diamond carbon film and production thereofInfo
- Publication number
- JPH01201095A JPH01201095A JP2280288A JP2280288A JPH01201095A JP H01201095 A JPH01201095 A JP H01201095A JP 2280288 A JP2280288 A JP 2280288A JP 2280288 A JP2280288 A JP 2280288A JP H01201095 A JPH01201095 A JP H01201095A
- Authority
- JP
- Japan
- Prior art keywords
- film
- diamond
- carbon
- stepwise
- continuously
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 54
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 54
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910003460 diamond Inorganic materials 0.000 title abstract 2
- 239000010432 diamond Substances 0.000 title abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000001257 hydrogen Substances 0.000 claims abstract description 29
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 29
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 11
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 abstract description 19
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 239000012159 carrier gas Substances 0.000 abstract description 6
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 6
- 239000000919 ceramic Substances 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000004033 plastic Substances 0.000 abstract description 4
- 229920003023 plastic Polymers 0.000 abstract description 4
- 239000011248 coating agent Substances 0.000 abstract description 3
- 238000000576 coating method Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract description 2
- 239000011159 matrix material Substances 0.000 abstract 2
- 239000008246 gaseous mixture Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 65
- 239000000463 material Substances 0.000 description 33
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 239000003208 petroleum Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- YBYIRNPNPLQARY-UHFFFAOYSA-N 1H-indene Chemical compound C1=CC=C2CC=CC2=C1 YBYIRNPNPLQARY-UHFFFAOYSA-N 0.000 description 2
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 description 2
- 235000015842 Hesperis Nutrition 0.000 description 2
- 235000012633 Iberis amara Nutrition 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 239000001569 carbon dioxide Substances 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 229910002090 carbon oxide Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- HGCIXCUEYOPUTN-UHFFFAOYSA-N cyclohexene Chemical compound C1CCC=CC1 HGCIXCUEYOPUTN-UHFFFAOYSA-N 0.000 description 2
- LPIQUOYDBNQMRZ-UHFFFAOYSA-N cyclopentene Chemical compound C1CC=CC1 LPIQUOYDBNQMRZ-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- YNPNZTXNASCQKK-UHFFFAOYSA-N phenanthrene Chemical compound C1=CC=C2C3=CC=CC=C3C=CC2=C1 YNPNZTXNASCQKK-UHFFFAOYSA-N 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- VXNZUUAINFGPBY-UHFFFAOYSA-N 1-Butene Chemical compound CCC=C VXNZUUAINFGPBY-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- LVZWSLJZHVFIQJ-UHFFFAOYSA-N Cyclopropane Chemical compound C1CC1 LVZWSLJZHVFIQJ-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 150000001335 aliphatic alkanes Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- IAQRGUVFOMOMEM-UHFFFAOYSA-N butene Natural products CC=CC IAQRGUVFOMOMEM-UHFFFAOYSA-N 0.000 description 1
- 229960000411 camphor oil Drugs 0.000 description 1
- 239000010624 camphor oil Substances 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 150000001925 cycloalkenes Chemical class 0.000 description 1
- 239000010727 cylinder oil Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 235000019441 ethanol Nutrition 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 239000007888 film coating Substances 0.000 description 1
- 238000009501 film coating Methods 0.000 description 1
- 239000000295 fuel oil Substances 0.000 description 1
- 239000012208 gear oil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- -1 nitrogen-containing carbon compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- RGSFGYAAUTVSQA-UHFFFAOYSA-N pentamethylene Natural products C1CCCC1 RGSFGYAAUTVSQA-UHFFFAOYSA-N 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000010665 pine oil Substances 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は、ロケットからかみそりまで、各種製品のトッ
プコート膜として使用てきるダイヤモンド状炭素膜とそ
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a diamond-like carbon film that can be used as a top coat film for various products, from rockets to razors, and a method for producing the same.
[従来の技術]
近年、低圧領域て気相から薄膜状のダイヤモンド状炭素
膜か合成されるようになり、ダイヤモンド状炭素の有す
る各種特性を活かして切削工具。[Prior Art] In recent years, thin diamond-like carbon films have been synthesized from the gas phase in low-pressure regions, and the various properties of diamond-like carbon can be utilized to create cutting tools.
耐摩耗性間滑脱、スピーカ材料、光学部品あるいはエレ
クトロニクス材料等として種々の分野て応用か期待され
ている。It is expected to be applied in various fields such as wear-resistant and slip-resistant materials, speaker materials, optical components, and electronics materials.
このうち、ダイヤモンド状炭素の硬度の高さ。Among these, diamond-like carbon has the highest hardness.
化学的安定性、71!l滑性等を活かした利用法として
、磁気記録媒体の耐斥耗性潤滑膜、切削工具の耐庁耗用
膜などのように、母材の表面にトップコート膜としてコ
ーチインクする方法かある。Chemical stability, 71! One way to take advantage of its lubricity is to apply coach ink as a top coat on the surface of the base material, such as as an abrasion-resistant lubricant film for magnetic recording media or a wear-resistant film for cutting tools. .
[解決すべき問題点コ
しかしながら、ダイヤモンド状炭素膜をトップコート膜
として、金属、セラミックス、プラスチック等からなる
母材上に直接コーティングすると、母材とダイヤモンド
状炭素膜の硬度1弾性係数、熱膨張係数の差によって応
力か生し、膜剥離や、クラックを発生するという欠点か
あった。[Problems to be solved] However, when a diamond-like carbon film is directly coated as a top coat film on a base material made of metal, ceramics, plastic, etc., the hardness 1 elastic coefficient and thermal expansion of the base material and the diamond-like carbon film are The difference in coefficients generates stress, which has the disadvantage of causing film peeling and cracks.
このため、ダイヤモンド状炭素膜は高硬度でトップコー
ト膜に適しているという特長を有しながら、トップコー
ト膜として実用化できないという問題点を有していた。Therefore, although the diamond-like carbon film has the advantage of being highly hard and suitable for a top coat film, it has had the problem that it cannot be put to practical use as a top coat film.
本発明は上記の問題点にかんがみてなされたものて、第
一に、金属、セラミックス、プラスチック等からなる母
材との密着性を良くして、膜剥離やクラックの発生を防
止し、トップコート膜として実用的に用いることのでき
るタイヤモンド状炭素膜の提供を目的とし、第二に、ト
ップコート膜として実用化可能な上記ダイヤモンド状炭
素膜の容易なる製造方法の提供を目的とする。The present invention has been made in view of the above problems. First, it improves the adhesion to the base material made of metal, ceramics, plastic, etc., prevents film peeling and cracks, and improves the adhesion of the top coat to the base material. The object of the present invention is to provide a diamond-like carbon film that can be practically used as a film, and a second object is to provide an easy manufacturing method for the diamond-like carbon film that can be practically used as a top coat film.
[問題点の解決手段]
上記目的を達成するため、本発明のダイヤモンド状炭素
膜は、膜中の結合水素量を、段階的もしくは連続的に異
ならせた構成としである。[Means for Solving Problems] In order to achieve the above object, the diamond-like carbon film of the present invention has a structure in which the amount of bound hydrogen in the film is varied stepwise or continuously.
また、本発明のダイヤモンド状炭素膜の製造方法は、膜
合成時の反応条件を一定時間づつ段階的に変化させ、結
合水素量の異なる膜を段階的に積層して製造する方法、
および膜合成時の反応条件を連続的に変化させ、結合水
素量を連続的に異ならせて製造する方法としである。Further, the method for producing a diamond-like carbon film of the present invention includes a method in which the reaction conditions during film synthesis are changed stepwise for a certain period of time, and films having different amounts of bound hydrogen are stacked in steps;
Another method is to continuously change the reaction conditions during membrane synthesis and to continuously vary the amount of bonded hydrogen.
以下、本発明を図面を参照して説明する。Hereinafter, the present invention will be explained with reference to the drawings.
第1図は本発明ダイヤモンド状炭素膜をトップコート膜
として用いた場合の概念図を示す、同図において、lは
被コーテイング材としての母材、コーテイング材として
の2はダイヤモンド状炭素膜である。Figure 1 shows a conceptual diagram when the diamond-like carbon film of the present invention is used as a top coat film. In the figure, l is the base material as the material to be coated, and 2 is the diamond-like carbon film as the coating material. .
コーティングを必要とする母材lとしては、ロケットか
らかみそりまで種々の製品か該当し、その材質も金属、
セラミックス、プラスチック等種々のものを用いること
かできる。Base materials that require coating include a variety of products, from rockets to razors, and the materials may include metals,
Various materials such as ceramics and plastics can be used.
母材lをコーティングするダイヤモンド状炭素膜は、母
材lの表面に100A以上、好ましくは400A以上の
厚みて形成する。The diamond-like carbon film coating the base material 1 is formed on the surface of the base material 1 to a thickness of 100A or more, preferably 400A or more.
このダイヤモンド状炭素膜2は、RFプラズマCVD法
、DCプラズマCVD法、イオンブレーティング法ある
いはスパッタリング法等の低圧気相合成法によって形成
する。This diamond-like carbon film 2 is formed by a low-pressure vapor phase synthesis method such as an RF plasma CVD method, a DC plasma CVD method, an ion blasting method, or a sputtering method.
例えば、RF(高周波)プラズマCVD法によってダイ
ヤモンド状炭素膜2を形成する場合は、炭素源ガスまた
は炭素源ガスとキャリヤガスとの混合ガスを、母材lを
配置した反応室内へ供給し、母材lを加熱しつつ、陰極
に高周波を印加して陽極との間でグロー放電を生じさせ
ることによって炭素源ガスまたは混合ガスを励起してプ
ラズマを発生させ、これにより、母材lの表面にダイヤ
モンド状炭素膜2を形成する。For example, when forming the diamond-like carbon film 2 by RF (radio frequency) plasma CVD method, a carbon source gas or a mixed gas of a carbon source gas and a carrier gas is supplied into the reaction chamber in which the base material l is placed, While heating the material 1, a high frequency is applied to the cathode to generate a glow discharge between the cathode and the anode, thereby exciting the carbon source gas or mixed gas and generating plasma. A diamond-like carbon film 2 is formed.
この場合、炭素源ガスとしては、例えば、メタン、エタ
ン、プロパン、ブタン、ペンタン、ヘキサンなどのアル
カン類、エチレン、プロピレン。In this case, the carbon source gas includes, for example, alkanes such as methane, ethane, propane, butane, pentane, and hexane, ethylene, and propylene.
ブテン、ペンテン、ブタジェンなどのアルケン類、アセ
チレンなどのアルキン類、ベンゼン、トルエン、キシレ
ン、インデン、ナフタリン、フェナントレンなどの芳香
族炭化水素類、シクロプロパン、シクロヘキサンなどの
シクロパラフィン類、シクロペンテン、シクロヘキセン
などのシクロオレフィン類などを用いる。Alkenes such as butene, pentene, butadiene, alkynes such as acetylene, aromatic hydrocarbons such as benzene, toluene, xylene, indene, naphthalene, phenanthrene, cycloparaffins such as cyclopropane, cyclohexane, cyclopentene, cyclohexene, etc. Cycloolefins etc. are used.
また、炭素源ガスとして、−酸化炭素、二酸化炭素、メ
チルアルコール、エチルアルコールなどの含酸素炭素化
合物、メチルアミン、エチルアミン、アニリンなどの含
窒素炭素化合物なども使用することかできる。さらに、
単体ではないか、ガソリンなどの消防法危険物第4類、
第1類、ケロシン、テレピン油、樟脳油、松根油等の第
2石油類、重油などの第2石油類、ギヤー油、シリンダ
油等の第4石油類も有効に使用することかできる。また
、前記各種の炭素化合物を混合して使用することもでき
る。Further, as the carbon source gas, carbon oxide, carbon dioxide, oxygen-containing carbon compounds such as methyl alcohol and ethyl alcohol, and nitrogen-containing carbon compounds such as methylamine, ethylamine and aniline can also be used. moreover,
Is it a single substance?It is classified as a Class 4 dangerous substance under the Fire Service Act, such as gasoline.
Class 1 petroleum, class 2 petroleum such as kerosene, turpentine oil, camphor oil, pine oil, etc., class 2 petroleum such as heavy oil, and class 4 petroleum such as gear oil and cylinder oil can also be effectively used. Moreover, the various carbon compounds mentioned above can also be used in combination.
上記の炭素源ガスの中でもメタン、−酸化炭素、二酸化
炭素などが好ましい。Among the above carbon source gases, methane, carbon oxide, carbon dioxide, etc. are preferred.
前記キャリヤガスは、炭素源ガスをプラズマ反応系に導
入するキャリヤとして重要であるばかりてなく、プラズ
マを安定に発生させ、持続させる上で重要である。この
ようなキャリヤガスとしては、水素ガス、アルゴンガス
、ネオンガス、ヘリウムガス、キセノンガス、窒素ガス
などを用いる。The carrier gas is important not only as a carrier for introducing the carbon source gas into the plasma reaction system, but also in stably generating and sustaining plasma. As such a carrier gas, hydrogen gas, argon gas, neon gas, helium gas, xenon gas, nitrogen gas, etc. are used.
これらは、一種単独で用いてもよいし、二種以上を組合
せてもよい。These may be used alone or in combination of two or more.
上記キャリヤガスの中ても水素ガス、窒素ガス、アルゴ
ンガスなどが好ましい。Among the above carrier gases, hydrogen gas, nitrogen gas, argon gas, etc. are preferred.
このダイヤモンド状炭素膜2は、その内部における結合
水素量を、母材l側より表面側に段階的もしくは連続的
に減少させた構成としである。This diamond-like carbon film 2 has a structure in which the amount of bound hydrogen inside it is reduced stepwise or continuously from the base material l side to the surface side.
すなわち、膜中の結合水素量が多いときには膜の硬度か
低くなって内部応力も小さくなり、逆に、膜中の結合水
素量か少ないときには膜の硬度か高くなって内部応力も
大きくなることから、母材l側における結合水素量を多
くし、表面側における結合水素量を少なくした構成とし
である。これにより、トップコート膜の表面側の硬度を
高めるとともに、母材lと接触する側の応力を小さくし
て密着性を高め、弾性係数、熱膨張係数等の差に起因す
る剥離、クラックの発生を防止している。In other words, when the amount of bonded hydrogen in the film is large, the hardness of the film becomes low and the internal stress becomes small, and conversely, when the amount of bound hydrogen in the film is small, the hardness of the film becomes high and the internal stress becomes large. , the amount of bonded hydrogen on the base material l side is increased and the amount of bonded hydrogen on the surface side is decreased. This increases the hardness of the surface side of the top coat film, reduces the stress on the side that contacts the base material l, and improves adhesion, preventing peeling and cracking caused by differences in elastic modulus, thermal expansion coefficient, etc. is prevented.
第2図は、膜中の結合水素1が段階的に異なるダイヤモ
ンド状炭素膜を、母材1のトップコート膜として用いた
場合の断面図を示しており、母材l側より結合水素量の
異なる薄膜層2−1゜2−2.2−3 (結合水素量:
2−1>2−2>2−3)を複数形成しである。この
場合、薄膜層の数は、母材lの使用目的あるいは母材l
の材質、厚さ等に応し二層以−Lの適宜な数とする。Figure 2 shows a cross-sectional view of a diamond-like carbon film in which the amount of bound hydrogen 1 in the film differs in stages is used as a top coat film for base material 1. Different thin film layers 2-1゜2-2.2-3 (Amount of bonded hydrogen:
2-1>2-2>2-3). In this case, the number of thin film layers depends on the purpose of use of the base material l or the number of thin film layers.
Depending on the material, thickness, etc., the number of layers is two or more.
また第3図は、膜中における結合水素量か連続的に異な
るダイヤモンド状炭素膜2を母材lのトップコート膜と
して用いた場合の断面図を示している。この場合、結合
水素量の連続的に変化する割合は均一てなくてもよく、
例えば、中間部における変化率を大きくすることもでき
る。Further, FIG. 3 shows a cross-sectional view when a diamond-like carbon film 2 having a continuously different amount of bound hydrogen in the film is used as a top coat film for the base material l. In this case, the rate at which the amount of bound hydrogen changes continuously does not have to be uniform;
For example, the rate of change in the middle portion can be increased.
段階的あるいは連続的に変化(減少)させる結合水素量
は、約30原子%から数原子%の範囲内において行なう
ことか回旋である。The amount of bonded hydrogen to be changed (reduced) stepwise or continuously is within the range of approximately 30 atomic % to several atomic %, or rotationally.
次に、ダイヤモンド状炭素膜の製造方法について説明す
る。Next, a method for manufacturing a diamond-like carbon film will be described.
ダイヤモンド状炭素膜2を合成する際の反応条件の制御
は、例えば、RFプラズマCVD法によるときは、反応
ガス濃度、圧力、母材温度および/または高周波投入電
力を変えることにより行なう。For example, when using the RF plasma CVD method, the reaction conditions for synthesizing the diamond-like carbon film 2 are controlled by changing the reaction gas concentration, pressure, base material temperature, and/or high-frequency input power.
すなわち、RFプラズマCVD法によって結合水素量か
段階的に変化するダイヤモンド状炭素膜を製造する場合
は、第一段階て、結合水素量の多くなるような反応ガス
濃度、圧力、母材温度および/または高周波投入電力の
条件を設定し、任意の時間合成を行なう0次いて第二段
階で、第一段階より結合水素量の少なくなるような条件
を設定して任意の時間合成を行ない、その後さらに、第
三段階で第二段階より結合水素量の少なくなるような条
件を設定して任意の時間合成を行なう、これにより、結
合水素量の異なる薄膜層2−1゜2−2.2−3 (結
合本X量: 2−1>2−2>2−3)を積層して形成
することかできる。In other words, when producing a diamond-like carbon film in which the amount of bound hydrogen changes stepwise by RF plasma CVD, in the first step, the reaction gas concentration, pressure, base material temperature, and/or temperature are adjusted so that the amount of bound hydrogen increases. Alternatively, set the conditions for high-frequency input power and perform arbitrary time synthesis.In the second stage, set the conditions such that the amount of bound hydrogen is smaller than in the first stage and perform arbitrary time synthesis, and then further In the third step, conditions are set such that the amount of bound hydrogen is smaller than in the second step, and synthesis is performed for an arbitrary time.As a result, thin film layers 2-1゜2-2.2-3 with different amounts of combined hydrogen are formed. It can also be formed by laminating (amount of bonded books X: 2-1>2-2>2-3).
また、結合水素量か連続的に変化するダイヤモンド状炭
素膜を製造する場合は、膜合成中に、反応ガス濃度、圧
力 母材温度および/または高周波投入電力の設定条件
を、結合水素量か順次減少するように連続的に変化させ
ることにより行なう。In addition, when manufacturing a diamond-like carbon film in which the amount of bound hydrogen changes continuously, during membrane synthesis, the setting conditions of reaction gas concentration, pressure, base material temperature, and/or high-frequency input power should be changed sequentially depending on the amount of bound hydrogen. This is done by changing it continuously so that it decreases.
なお、RFプラズマCVD法による場合、炭素源ガスは
、例えば0,1〜500 cc/分の流量て供給し、ま
た、キャリヤガスは1〜1,000 cc/分の流量て
供給する。また、反応応力、すなわち反応室内の圧力は
、通常1O−5〜lOコTorr 、好ましくは、10
−3〜lO”Torrである。この反応圧力か10−’
Torrよりも低い場合には、ダイヤモンド状炭素膜の
生成速度か著しく遅くなることかある。一方、10’T
orrよりも高い場合には、ダイヤモンド状炭素膜か形
成されないことかある。In the case of the RF plasma CVD method, the carbon source gas is supplied at a flow rate of, for example, 0.1 to 500 cc/min, and the carrier gas is supplied at a flow rate of 1 to 1,000 cc/min. In addition, the reaction stress, that is, the pressure inside the reaction chamber, is usually 10-5 to 10 Torr, preferably 10
-3~lO"Torr.This reaction pressure is 10-'
If the temperature is lower than Torr, the formation rate of the diamond-like carbon film may be significantly slowed down. On the other hand, 10'T
If it is higher than orr, a diamond-like carbon film may not be formed.
さらに、母材lの加熱温度は、通常、室温〜1.000
°C1好ましくは、室温〜900℃である。この温度か
室温よりも低い場合には、ダイヤモンド状炭素膜か形成
されないことかある。また、高周波投入電力はIKWす
ることか好ましい、高周波投入電力かIKWを越えても
それに相当する効果を得られないことかあるからである
。Furthermore, the heating temperature of the base material l is usually room temperature to 1.000
°C1 Preferably, it is room temperature to 900 °C. If this temperature is lower than room temperature, a diamond-like carbon film may not be formed. Further, it is preferable that the high-frequency input power be equal to IKW, because even if the high-frequency input power exceeds IKW, the corresponding effect may not be obtained.
[実施例] 実施例と比較例の結果を以下に示す。[Example] The results of Examples and Comparative Examples are shown below.
・母材:A1基板
・ダイヤモンド状炭素層:CH,+H2のRFブラズマ
CVD法により形成。・Base material: A1 substrate ・Diamond-like carbon layer: Formed by RF plasma CVD method of CH, +H2.
(条件)・反応圧カニ 10−’Torr・基板温度、
100°C
・RFパワー+ 120 W
実施例
三層の薄膜層を下記の条件て合成し、全体として母材l
側から表面側に結合水素量の減少するダイヤモンド状炭
素膜を形成した(各層の厚み比較例1
ダイヤモンド状炭素膜を、上記実施例における“母材側
層”と同じ反応条件て形成した以外、実施例と同じ条件
て形成した(ダイヤモンド状炭素膜厚さ6000A)。(Conditions)・Reaction pressure 10-'Torr・Substrate temperature,
100°C ・RF power + 120 W Example Three thin film layers were synthesized under the following conditions, and the base material l as a whole was
A diamond-like carbon film was formed in which the amount of bonded hydrogen decreased from the side to the surface side (thickness of each layer Comparative Example 1) Except that the diamond-like carbon film was formed under the same reaction conditions as the “base material side layer” in the above example, It was formed under the same conditions as in the example (diamond-like carbon film thickness: 6000A).
比較例2
ダイヤモンド状炭素膜を、上記実施例における“表面側
層”と同じ条件て形成した以外、実施例と同し条件て形
成したくダイヤモンド炭素膜厚さ6000A ) 。Comparative Example 2 A diamond-like carbon film was formed under the same conditions as in the example except that the diamond-like carbon film was formed under the same conditions as the "surface side layer" in the above example.The thickness of the diamond-like carbon film was 6000A.
虹−ス
表面硬度をヌープ硬度計て、剥離状態を光学顕微鏡でそ
れぞれ測定した結果を下表に示す。The surface hardness of the rainbow glass was measured using a Knoop hardness meter, and the peeling state was measured using an optical microscope. The results are shown in the table below.
この結果、実施例のものは、表面硬度が十分で、しかも
クラックおよび膜剥離も発生しなかった。これに対し、
比較例1のものは、クラックおよび膜剥離を発生しない
か、表面硬度が十分でなく、傷の付きやすい状態であっ
た。さらに比較例2のものは、表面硬度は十分であるか
、クラックおよび膜剥離か発生した。As a result, the samples of Examples had sufficient surface hardness, and no cracks or film peeling occurred. In contrast,
In Comparative Example 1, cracks and film peeling did not occur, or the surface hardness was insufficient, and the film was easily scratched. Furthermore, the surface hardness of Comparative Example 2 was not sufficient, and cracks and film peeling occurred.
[発明の効果]
以上のように本発明によれば、ダイヤモンド状炭素膜中
の水素量を変化させることにより、密着性を高めて膜剥
離を防止し、機械的強度を向上させることができる。こ
れによりダイヤモンド状炭素膜を各種製品のトップコー
ト膜として実用化てきる。[Effects of the Invention] As described above, according to the present invention, by changing the amount of hydrogen in the diamond-like carbon film, it is possible to improve adhesion, prevent film peeling, and improve mechanical strength. This will enable the practical use of diamond-like carbon films as top coat films for various products.
また、通常の低圧気相合成技術を用いてこれらのダイヤ
モンド状炭素膜を容易に合成できるといった効果かある
。Another advantage is that these diamond-like carbon films can be easily synthesized using ordinary low-pressure vapor phase synthesis techniques.
第1図は本発明のダイヤモンド状炭素膜をトップコート
膜として用いた場合の概念図、第2図は結合水素量を段
階的に変化させた本発明の第一実施例の断面図、第3図
は結合水素量を連続的に変化させた本発明の第二実施例
の断面図を示す。
l:母材
2、ダイヤモンド状炭素膜Fig. 1 is a conceptual diagram when the diamond-like carbon film of the present invention is used as a top coat film, Fig. 2 is a cross-sectional view of the first embodiment of the present invention in which the amount of bonded hydrogen is changed stepwise, and Fig. 3 The figure shows a cross-sectional view of a second embodiment of the present invention in which the amount of bound hydrogen is continuously changed. l: Base material 2, diamond-like carbon film
Claims (3)
ならせた構成としたことを特徴とするダイヤモンド状炭
素膜。(1) A diamond-like carbon film characterized in that the amount of bound hydrogen in the film is varied stepwise or continuously.
させ、結合水素量の異なる膜を段階的に積層して製造す
ることを特徴とするダイヤモンド状炭素膜の製造方法。(2) A method for producing a diamond-like carbon film, which is characterized in that the reaction conditions during film synthesis are changed in stages over a certain period of time, and films with different amounts of bonded hydrogen are stacked in stages.
素量を連続的に異ならせて製造することを特徴とするダ
イヤモンド状炭素膜の製造方法。(3) A method for producing a diamond-like carbon film, characterized by continuously changing the reaction conditions during film synthesis and continuously varying the amount of bound hydrogen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2280288A JPH01201095A (en) | 1988-02-04 | 1988-02-04 | Diamond carbon film and production thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2280288A JPH01201095A (en) | 1988-02-04 | 1988-02-04 | Diamond carbon film and production thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01201095A true JPH01201095A (en) | 1989-08-14 |
Family
ID=12092817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2280288A Pending JPH01201095A (en) | 1988-02-04 | 1988-02-04 | Diamond carbon film and production thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01201095A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2679524A1 (en) * | 1991-07-23 | 1993-01-29 | Fluoroware Inc | SEMICONDUCTOR WAFER SUPPORT. |
| WO1999014746A1 (en) * | 1997-09-17 | 1999-03-25 | Showa Denko K.K. | Magnetic recording medium and method of producing the same |
| US6316062B1 (en) | 1997-09-17 | 2001-11-13 | Showa Denko K.K. | Magnetic recording medium and method of producing the same |
| JP2007160506A (en) * | 2007-02-23 | 2007-06-28 | Sumitomo Electric Hardmetal Corp | Amorphous carbon coated tool |
| JP2007261077A (en) * | 2006-03-28 | 2007-10-11 | Kirin Holdings Co Ltd | DLC film coated biodegradable plastic container or film and method for producing the same |
| JP2009504919A (en) | 2005-08-18 | 2009-02-05 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | A substrate coated with a layered structure comprising a tetrahedral carbon film |
| JP2009220238A (en) * | 2008-03-18 | 2009-10-01 | Tungaloy Corp | Amorphous carbon coated tool |
| JP2016074932A (en) * | 2014-10-03 | 2016-05-12 | 神港精機株式会社 | Hard coating, and method and device for forming the same |
| JP2017013136A (en) * | 2013-03-29 | 2017-01-19 | 日立金属株式会社 | Coated tool |
-
1988
- 1988-02-04 JP JP2280288A patent/JPH01201095A/en active Pending
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2679524A1 (en) * | 1991-07-23 | 1993-01-29 | Fluoroware Inc | SEMICONDUCTOR WAFER SUPPORT. |
| WO1999014746A1 (en) * | 1997-09-17 | 1999-03-25 | Showa Denko K.K. | Magnetic recording medium and method of producing the same |
| US6316062B1 (en) | 1997-09-17 | 2001-11-13 | Showa Denko K.K. | Magnetic recording medium and method of producing the same |
| US6468602B2 (en) | 1997-09-17 | 2002-10-22 | Showa Denko K.K. | Method of manufacturing a magnetic recording medium |
| JP2009504919A (en) | 2005-08-18 | 2009-02-05 | ナムローゼ・フェンノートシャップ・ベーカート・ソシエテ・アノニム | A substrate coated with a layered structure comprising a tetrahedral carbon film |
| JP2007261077A (en) * | 2006-03-28 | 2007-10-11 | Kirin Holdings Co Ltd | DLC film coated biodegradable plastic container or film and method for producing the same |
| JP2007160506A (en) * | 2007-02-23 | 2007-06-28 | Sumitomo Electric Hardmetal Corp | Amorphous carbon coated tool |
| JP2009220238A (en) * | 2008-03-18 | 2009-10-01 | Tungaloy Corp | Amorphous carbon coated tool |
| JP2017013136A (en) * | 2013-03-29 | 2017-01-19 | 日立金属株式会社 | Coated tool |
| JP2016074932A (en) * | 2014-10-03 | 2016-05-12 | 神港精機株式会社 | Hard coating, and method and device for forming the same |
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