[go: up one dir, main page]

JPH01193654A - voltage measurement probe - Google Patents

voltage measurement probe

Info

Publication number
JPH01193654A
JPH01193654A JP63017748A JP1774888A JPH01193654A JP H01193654 A JPH01193654 A JP H01193654A JP 63017748 A JP63017748 A JP 63017748A JP 1774888 A JP1774888 A JP 1774888A JP H01193654 A JPH01193654 A JP H01193654A
Authority
JP
Japan
Prior art keywords
voltage
electrode
measured
measurement
laser light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP63017748A
Other languages
Japanese (ja)
Inventor
Shinichi Wakana
伸一 若菜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP63017748A priority Critical patent/JPH01193654A/en
Publication of JPH01193654A publication Critical patent/JPH01193654A/en
Pending legal-status Critical Current

Links

Landscapes

  • Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
  • Measurement Of Current Or Voltage (AREA)

Abstract

PURPOSE:To achieve a higher accuracy, by forming a transparent electrode on the entire one side of an electrooptic crystal and a metal electrode having a contact pin on the other side thereof being divided one-or two-dimensionally with respect to a measuring point of an object to be measured. CONSTITUTION:The title probe 10 is provided with a transparent electrode 12 on one side of an electrooptic crystal plate 11 and a metal electrode 13 having a contact pin 14 being splitted on the other side thereof separately. Then, a laser light from a laser light source 20 is made incident into the probe 10 with the direction of polarization thereof changed by a 1/4 wavelength plate 16 through an optical system. Then, the laser light is transmitted through the electrode 12 and the crystal plate 11 and reflected with an electrode 13a to be incident into a detector 21. Then, a voltage at a portion 6a of an object 6 to be measured is applied between the electrode 12 and the electrode 13a and the refractive index of the laser light changes within the crystal plate 11 thereby enabling detection of a voltage from a variation of the laser light incident into the detector 21.

Description

【発明の詳細な説明】 〔概 要〕 電気光学結晶を用いた電圧測定装置の電圧測定プローブ
に関し、 測定精度の向上を目的とし、 電気光学結晶に光ビームを照射し被測定対称物の測定点
における電圧を測定する電圧測定装置の電圧測定プロー
ブが、電気光学結晶板の片面全面には透明電極を、また
他の面にはコンタクトピンを備えた金属電極を被測定対
称物の測定点に対応して一次元もしくは二次元に分割し
て形成して構成する。
[Detailed Description of the Invention] [Summary] Regarding a voltage measurement probe of a voltage measurement device using an electro-optic crystal, the purpose of improving measurement accuracy is to irradiate the electro-optic crystal with a light beam to measure the measurement point of the object to be measured. The voltage measuring probe of the voltage measuring device that measures the voltage in the electro-optic crystal plate has a transparent electrode on one side and a metal electrode with contact pins on the other side corresponding to the measurement point of the object to be measured. It is constructed by dividing it into one or two dimensions.

〔産業上の利用分野〕[Industrial application field]

本発明は半導体装置等における電圧分布を測定する電圧
測定装置に係り、特に測定精度の向上を図った電圧測定
プローブに関する。
The present invention relates to a voltage measuring device for measuring voltage distribution in semiconductor devices and the like, and particularly to a voltage measuring probe with improved measurement accuracy.

〔従来の技術〕[Conventional technology]

半導体■、SI素子表面等の如く回路構成が複雑な部分
の電圧分布を細部にわたって細かく読み取る場合には、
従来は電気的な測定プローブを少しづつずらして測定す
るか、または多数のコンタクトピンを所要部分に押し当
ててチャネルを切り換えながら測定する等の手段が一般
的に用いられている。
When reading the detailed voltage distribution of parts with complex circuit configurations, such as the surface of semiconductors and SI elements,
Conventionally, methods have generally been used, such as measuring by moving an electrical measuring probe little by little, or pressing a large number of contact pins against a desired area and measuring while switching channels.

第3図は従来の電圧測定方法の一例を示す説明図であり
、−次元方向の測定状態を示したものである。
FIG. 3 is an explanatory diagram showing an example of a conventional voltage measurement method, and shows a measurement state in the -dimensional direction.

図において、1は被測定対象物+ laはその給電部分
、2は電圧測定装置、3は試験制御■系+ 3aは試験
信号を電圧測定部分に伝送する信号ケーブル。
In the figure, 1 is the object to be measured + la is its power supply part, 2 is the voltage measurement device, 3 is the test control system + 3a is the signal cable that transmits the test signal to the voltage measurement part.

3bはクロック信号等を電圧測定装置に伝送する信号ケ
ーブル、4はコネクタ5からの信号を電圧測定装置2に
伝送する測定ケーブル+4aは測定プローブ5aからの
信号波形を電圧測定装置2に伝送する測定ケーブルであ
る。
3b is a signal cable that transmits a clock signal etc. to the voltage measuring device; 4 is a measurement cable that transmits the signal from the connector 5 to the voltage measuring device 2; and 4a is a measurement cable that transmits the signal waveform from the measuring probe 5a to the voltage measuring device 2. It's a cable.

図で、試験制御系3から試験信号およびクロック信号等
をそれぞれ所要の装置に送出した状態で、被測定対象物
1の給電部分1aを測定プローブ5aの先端で順次ずら
しながら接触し、接触領域毎に得られた信号波形を電圧
測定装置2で演算して被測定対象物1の電圧分布を測定
している。
In the figure, with the test signal, clock signal, etc. sent from the test control system 3 to the respective required devices, the power feeding part 1a of the object to be measured 1 is contacted with the tip of the measuring probe 5a while sequentially shifting, and each contact area is The voltage distribution of the object to be measured 1 is measured by calculating the signal waveform obtained in the voltage measuring device 2.

かかる構成になる従来の電圧測定方法では、被測定対象
物1から離れた場所に制御系や測定装置等を設置するこ
とができると云う利点がある反面、被測定対象物1の給
電部分1aから電圧測定装置2まで測定ケーブル4およ
び4aを介して離れた場所で電圧を測定しているため測
定ケーブルのインピーダンスが電圧測定値に誤差を生じ
させる場合があり、また給電部分1aの電圧波形の周波
数がにllzオーダになると測定ケーブル40分布イン
ダクタンスや分布容■が被測定電圧に影響して電圧波形
に歪を生じ正確な電圧測定ができない。
The conventional voltage measurement method with such a configuration has the advantage that the control system, measuring device, etc. can be installed at a location away from the object to be measured 1, but on the other hand, it Since the voltage is measured at a remote location via the measurement cables 4 and 4a to the voltage measurement device 2, the impedance of the measurement cable may cause an error in the voltage measurement value, and the frequency of the voltage waveform of the power supply part 1a may When the voltage is on the order of 2 1 z, the distributed inductance and distributed capacitance of the measuring cable 40 affect the voltage to be measured, causing distortion in the voltage waveform and making it impossible to measure the voltage accurately.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

従来の電圧測定方法では、測定ケーブルのインピーダン
スが電圧測定値に誤差を生じさせると云う問題があり、
また被測定対象物の電圧波形の周波数が特に高いG11
zオーダの場合には測定ケーブル4の分布インダクタン
スや分布容量が正確な電圧測定を阻害すると云う問題が
あった。
Conventional voltage measurement methods have the problem that the impedance of the measurement cable causes errors in the voltage measurement.
In addition, G11 has a particularly high frequency of the voltage waveform of the object to be measured.
In the case of z-order, there is a problem in that the distributed inductance and distributed capacitance of the measurement cable 4 impede accurate voltage measurement.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点は、電気光学結晶に光ビームを照射し被測定
対称物の測定点における電圧を測定する電圧測定装置の
電圧測定プローブが、 電気光学結晶板の片面全面には透明電極を、また他の面
にはコンタクトビンを備えた金属電極を被測定対称物の
測定点に対応して一次元もしくは二次元に分割して形成
してなる電圧測定プローブによって解決される。
The above problem is that the voltage measurement probe of the voltage measurement device, which measures the voltage at the measurement point of the object to be measured by irradiating the electro-optic crystal with a light beam, has a transparent electrode on one side of the electro-optic crystal plate, and a transparent electrode on the entire surface of one side of the electro-optic crystal plate. This problem can be solved by a voltage measuring probe formed by dividing a metal electrode with a contact bottle into one-dimensional or two-dimensional parts corresponding to the measurement points of the object to be measured.

〔作 用〕[For production]

−Mにビスマス・シリコン・オキサイド(BSO)やビ
スマス・ゲルマニウム・オキサイド(BGO)等よりな
る電気光学結晶板に電極を通して部分的に電圧を印加す
ると、該結晶内の電圧印加部分の近傍のみ分極率が変化
して電界方向の屈折率が変化する。
- When a voltage is applied partially to M through an electrode through an electro-optic crystal plate made of bismuth silicon oxide (BSO) or bismuth germanium oxide (BGO), the polarizability is increased only in the vicinity of the voltage applied part in the crystal. changes, and the refractive index in the direction of the electric field changes.

従って屈折率の変化を透過光の光強度の変化として測定
することによって、逆に電圧が印加された部分の電圧値
を知ることができる。
Therefore, by measuring the change in the refractive index as a change in the light intensity of transmitted light, it is possible to find out the voltage value of the portion to which the voltage is applied.

すなわち、電気光学結晶板の被測定対象物対向面に該測
定対象物の電圧測定点と電気的に接続された光反射性を
持つ金属電極を形成し、他面に透明な電極を形成する。
That is, a light-reflective metal electrode electrically connected to a voltage measurement point of the object to be measured is formed on the surface of the electro-optic crystal plate facing the object to be measured, and a transparent electrode is formed on the other surface.

この状態で透明電極側から絞られた光ビームを照射する
と該光ビームは透明電極を透過し金属電極の裏面で反射
するが、結晶内を往復する間に上記光ビームは、金属電
極に印加された電圧によって生ずる屈折率変化の異方性
のため偏光域が変えられる。従ってその反射光を偏光ビ
ームスプリンタをiI遇させた後光の強弱として検出す
ることによって被測定対象物の測定点における電圧を知
ることができる。
In this state, when a focused light beam is irradiated from the transparent electrode side, the light beam passes through the transparent electrode and is reflected on the back surface of the metal electrode, but while traveling back and forth within the crystal, the light beam is applied to the metal electrode. The polarization range is changed due to the anisotropy of the refractive index change caused by the applied voltage. Therefore, the voltage at the measurement point of the object to be measured can be determined by detecting the reflected light as the strength or weakness of the afterlight that is reflected by the polarized beam splinter.

本発明はかかる電圧測定方法に基づく電圧測定プローブ
を電気光学結晶板上に直接設けたもので、特に電気光学
結晶板を光の通過方向と電圧印加方向が等しい縦型で使
用するので該電気光学結晶板の厚さを充分薄くすること
ができる。従って伝送インピーダンスによる電圧測定値
の誤差や分布容量による電圧波形の歪の発生がなく高精
度の電圧測定が可能となる。
The present invention provides a voltage measurement probe based on such a voltage measurement method directly on an electro-optic crystal plate, and in particular, since the electro-optic crystal plate is used in a vertical type in which the direction of light passage and the direction of voltage application are the same, the electro-optic The thickness of the crystal plate can be made sufficiently thin. Therefore, highly accurate voltage measurement is possible without generating errors in voltage measurement values due to transmission impedance or distortion of voltage waveforms due to distributed capacitance.

更に被測定対象物側の電極に各測定領域を独立させる:
苛を形成することによって各領域間の電圧クロストーク
が防止できるので、安定した電圧測定が可能となる。
Furthermore, each measurement area is made independent of the electrode on the side of the object to be measured:
By forming a voltage crosstalk between the regions, stable voltage measurement becomes possible.

〔実施例〕〔Example〕

第1図は本発明になる電圧測定プローブの一例を示した
図であり、(A)は電圧測定装置主要部の概略構成図を
また(B)は電圧測定プローブの詳細を説明する図であ
る。また第2図は電圧測定プローブの他の実施例を示す
図である。
FIG. 1 is a diagram showing an example of the voltage measurement probe according to the present invention, in which (A) is a schematic configuration diagram of the main part of the voltage measurement device, and (B) is a diagram illustrating details of the voltage measurement probe. . Further, FIG. 2 is a diagram showing another embodiment of the voltage measurement probe.

第1図(A)で、破線部分が電気光学結晶板110片側
全面に透明電極12をまた他面には分割された状態でコ
ンタクトピン14をD#えた金属電極13を形成した本
発明になる電圧測定プローブ10であり、−点鎖線で示
す被測定対象物6の複数の測定点とは上記コンタクトピ
ン14を介して各対応する金属電(歪と電気的に接続さ
れている。
In FIG. 1(A), the broken line indicates the present invention in which a transparent electrode 12 is formed on the entire surface of one side of the electro-optic crystal plate 110, and a metal electrode 13 with contact pins 14 is formed on the other surface in a divided state. The voltage measurement probe 10 is electrically connected to a plurality of measurement points of the object to be measured 6 indicated by the dashed line and the corresponding metal electrodes (strains) via the contact pins 14 mentioned above.

また16は光の偏光方向を変えるための174波長板、
 17は特定の偏光のみを透過し他の偏光を反射する偏
光ビームスプリッタ、 18はレンズ系、19は光をX
、Y方向にスキャンニングするためのx−Y偏゛向器、
 20はレーザ光源、21は上記電圧測定プローブ10
からの反射光を受けて電圧値に変換する演算機能を有す
る検出ディテクタをそれぞれ示している。
16 is a 174 wavelength plate for changing the polarization direction of light;
17 is a polarizing beam splitter that transmits only specific polarized light and reflects other polarized light, 18 is a lens system, and 19 is a polarizing beam splitter that transmits only specific polarized light and reflects other polarized light.
, an x-Y deflector for scanning in the Y direction,
20 is a laser light source, 21 is the voltage measurement probe 10 mentioned above.
Each of the detection detectors has an arithmetic function of receiving reflected light from the detector and converting it into a voltage value.

図では被測定対象物6の6a部分における電圧を測定す
る場合の状態を表わしたもので、該68部分に対応する
電圧測定プローブ10の金属電極13aには該6a部分
の電圧が印加されている。
The figure shows the state when measuring the voltage at a portion 6a of the object to be measured 6, and the voltage at the portion 6a is applied to the metal electrode 13a of the voltage measurement probe 10 corresponding to the portion 68. .

レーザ光源20から射出してA方向に進むレーザ光はX
−Y偏向器19.レンズ系18.偏光ビームスプリッタ
17を透過し、1/4彼長板16で偏光方向が変えられ
て電圧測定プローブ10に入射する。更に該レーザ光は
透明電極12と電気光学結晶板11を通り金属電極13
aの方面で反射して逆方向に進み、I/4波長板16で
更に偏光方向が変えられて偏光ビームスプリッタ17を
UifAすることなく反射されてB方向に進み検出ディ
テクタ21に入射する。
The laser light emitted from the laser light source 20 and traveling in the A direction is
-Y deflector 19. Lens system 18. The light passes through the polarizing beam splitter 17, has its polarization direction changed by the 1/4 length plate 16, and enters the voltage measuring probe 10. Furthermore, the laser beam passes through a transparent electrode 12 and an electro-optic crystal plate 11 and reaches a metal electrode 13.
It is reflected in the direction a and travels in the opposite direction, and the polarization direction is further changed by the I/4 wavelength plate 16 and is reflected without passing through the polarization beam splitter 17 UifA and travels in the direction B and enters the detection detector 21.

この際、上記電気光学結晶板11の透明電極12と金属
Ti113aの間には被測定対象物6の6a部分の電圧
が印加されているため該結晶板ll内では該レーザ光に
対する屈折率が変化し検出ディテクタ21に入射するレ
ーザ光の強さに変化が生ずる。従ってその変化量から上
記6a部分における電圧を検出している。
At this time, since the voltage of the part 6a of the object to be measured 6 is applied between the transparent electrode 12 of the electro-optic crystal plate 11 and the metal Ti 113a, the refractive index for the laser beam changes within the crystal plate 11. However, the intensity of the laser light incident on the detection detector 21 changes. Therefore, the voltage at the portion 6a is detected from the amount of change.

なお被測定対象物6の6a部分以外を測定する場合には
、x−y偏向器19を動作させてレーザ光のビーム方向
を所要の位置に偏向させている。
Note that when measuring a portion other than the portion 6a of the object to be measured 6, the xy deflector 19 is operated to deflect the beam direction of the laser beam to a required position.

従ってかかる動作を繰り返えして被測定対象物6の複数
の測定点に対応する電気光学結晶板11の測定領域を順
次スキャンニングし、被測定対象物6の電圧分布を検出
し測定している。
Therefore, by repeating this operation, the measurement areas of the electro-optic crystal plate 11 corresponding to the plurality of measurement points of the object to be measured 6 are sequentially scanned, and the voltage distribution of the object to be measured 6 is detected and measured. There is.

図(B)は電圧測定プローブ10部分の詳細を示す斜視
図であり、金属電極が二次元に配置された場合の状態を
表わしている。
Figure (B) is a perspective view showing details of the voltage measurement probe 10, and shows a state in which metal electrodes are arranged two-dimensionally.

図で厚さ100μmm程度のビスマス・シリコン・オキ
サイド(BSO)またはビスマス・ゲルマニウム・オキ
サイド(BGO)よりなる電気光学結晶板11の片面全
面に形成する透明電極12は、酸化インジューム錫合金
(ITO)等を厚さ1000〜2000人程度に通常の
蒸着技術を用いて被着したもので、また他面に形成する
金属電極13はその裏面でのレーザ光の反射効率を高め
るために通常金(Au)等を上記透明電極12と同等の
厚さに且つ各測定領域毎に例えばbnm角程度の大きさ
にそれぞれが独立するようにマスキングして蒸着してい
る。
In the figure, the transparent electrode 12 formed on the entire surface of one side of the electro-optic crystal plate 11 made of bismuth silicon oxide (BSO) or bismuth germanium oxide (BGO) with a thickness of about 100 μmm is made of indium tin oxide alloy (ITO). The metal electrode 13 formed on the other side is usually made of gold (Au) to increase the reflection efficiency of the laser beam on the back side. ), etc. are vapor-deposited to the same thickness as the transparent electrode 12 and masked so that each measurement area is independently masked to a size of approximately bnm square for each measurement area.

また、被測定対象物6の各測定点と電気的M通を図るた
めのコンタクトピン14は、太さ100〜200μma
+程度で長さ1mm未満の金(Au)線を例えばロー付
は等の手段で縦方向に固定している。
Further, the contact pin 14 for electrically connecting each measurement point of the object to be measured 6 has a thickness of 100 to 200 μm.
A gold (Au) wire with a length of less than 1 mm is fixed in the vertical direction by brazing or the like.

第2図は電気光学結晶板中における測定領域間のクロス
トークを防止することを目的とした池の実施例を示した
もので、金属電極間の電気光学結晶板部分に細?品を形
成したものである。
Figure 2 shows an example of a pond that aims to prevent crosstalk between measurement areas in an electro-optic crystal plate, and shows a thin layer in the electro-optic crystal plate part between metal electrodes. It is a product formed from a product.

図で、第1図(B)と同様に11は電気光学結晶板。In the figure, 11 is an electro-optic crystal plate as in FIG. 1(B).

12は透明電極、13は金属電極、14はコンタクトピ
ンである。
12 is a transparent electrode, 13 is a metal electrode, and 14 is a contact pin.

また金属電極13間の電気光学結晶板11の表面には、
幅、深さ共20〜30μmm程度の?1fllaをグイ
シングツ−等の精密カッタを用いて形成している。
Further, on the surface of the electro-optic crystal plate 11 between the metal electrodes 13,
Both width and depth are about 20 to 30 μmm? 1 flla is formed using a precision cutter such as a Guising tool.

この場合は、透明”1m12と金属型Jilaa間にお
ける′電界が例えば該金属電Fi13aに隣接する13
bまたは13cに波及することが少なく、従って測定領
域間のクロストークを防止することができる。
In this case, the electric field between the transparent 1m12 and the metal Jilaa is, for example, 13a adjacent to the metal electric field Fi13a.
b or 13c, and therefore crosstalk between measurement areas can be prevented.

〔発明の効果〕〔Effect of the invention〕

上述の如(本発明により、精度のよい電圧測定が安定し
て実施できると共に、被測定対象物の電圧波形が高速の
場合にも追従して測定できる電圧測定プローブを提供す
ることができる。
As described above, according to the present invention, it is possible to provide a voltage measurement probe that can stably perform highly accurate voltage measurements and can follow and measure even when the voltage waveform of the object to be measured is high speed.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明になる電圧測定プローブの一例を示した
図、 第2図は電圧測定プローブの他の実施例を示す図、 第3図は従来の電圧測定方法の一例を示す説明図、 である。図において、 6は被測定対象物、 10は電圧測定プローブ、 11は電気光学結晶板、 llaは溝、′12は透明電
極、     13は金属電極、13a、 13b、 
13cは金属TL極、14はコンタクI・ピン、 16
は174波長板、17は偏光ビームスプリンタ、 18はレンズ系、     19はX−Y偏向器、20
はレーザ光源、   21は検出ディテクタ、をそれぞ
れ表わす。 (A) (B) 」(発g月(二tろ電圧j貝・しL〕b−フ坊−奎り・
ぜ乙た図、第 1 図 1層力Eタ則定フb−フr他の実所E例Σ示す間第2 
図 従来0電圧清メプ珪の−9・尿水゛す也え明図帛 ご 
FIG. 1 is a diagram showing an example of a voltage measurement probe according to the present invention, FIG. 2 is a diagram showing another embodiment of the voltage measurement probe, and FIG. 3 is an explanatory diagram showing an example of a conventional voltage measurement method. It is. In the figure, 6 is an object to be measured, 10 is a voltage measurement probe, 11 is an electro-optic crystal plate, lla is a groove, '12 is a transparent electrode, 13 is a metal electrode, 13a, 13b,
13c is metal TL pole, 14 is contact I pin, 16
is a 174 wavelength plate, 17 is a polarizing beam splinter, 18 is a lens system, 19 is an X-Y deflector, 20
21 represents a laser light source, and 21 represents a detection detector. (A) (B) ” (Hag month (Nitro voltage J shell, Shi L))
Figure 1. Figure 1. Layer force Eta law, b-fr, and other actual E examples Σ.
Diagram of the conventional 0 voltage clear mep-9 urine and water diagram
figure

Claims (1)

【特許請求の範囲】 電気光学結晶に光ビームを照射し被測定対称物の測定点
における電圧を測定する電圧測定装置の電圧測定プロー
ブが、 電気光学結晶板の片面全面には透明電極を、また他の面
にはコンタクトピンを備えた金属電極を被測定対称物の
測定点に対応して一次元もしくは二次元に分割して形成
してなることを特徴とする電圧測定プローブ。
[Claims] A voltage measurement probe of a voltage measurement device that measures the voltage at a measurement point of an object to be measured by irradiating an electro-optic crystal with a light beam comprises a transparent electrode on one entire surface of an electro-optic crystal plate; A voltage measurement probe characterized in that the other surface is formed by dividing a metal electrode with contact pins into one or two dimensions corresponding to the measurement points of the object to be measured.
JP63017748A 1988-01-28 1988-01-28 voltage measurement probe Pending JPH01193654A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP63017748A JPH01193654A (en) 1988-01-28 1988-01-28 voltage measurement probe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63017748A JPH01193654A (en) 1988-01-28 1988-01-28 voltage measurement probe

Publications (1)

Publication Number Publication Date
JPH01193654A true JPH01193654A (en) 1989-08-03

Family

ID=11952365

Family Applications (1)

Application Number Title Priority Date Filing Date
JP63017748A Pending JPH01193654A (en) 1988-01-28 1988-01-28 voltage measurement probe

Country Status (1)

Country Link
JP (1) JPH01193654A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0440381A (en) * 1990-06-06 1992-02-10 Fujitsu Ltd Crystal contact holding structure of signal waveform detection device
US6297650B1 (en) 1998-08-19 2001-10-02 Ando Electric Co., Ltd Electrooptic probe
US6933276B1 (en) 1989-08-30 2005-08-23 Regeneron Pharmaceuticals, Inc. Methods of treating peripheral neuropathies using neurotrophin-3

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6933276B1 (en) 1989-08-30 2005-08-23 Regeneron Pharmaceuticals, Inc. Methods of treating peripheral neuropathies using neurotrophin-3
JPH0440381A (en) * 1990-06-06 1992-02-10 Fujitsu Ltd Crystal contact holding structure of signal waveform detection device
US6297650B1 (en) 1998-08-19 2001-10-02 Ando Electric Co., Ltd Electrooptic probe

Similar Documents

Publication Publication Date Title
US4618819A (en) Measurement of electrical signals with subpicosecond resolution
EP0324110B1 (en) Electrical signal sampling probe apparatus
EP0160209A1 (en) Measurement of electrical signals with subpicosecond resolution
CN105353231A (en) Optical sensing device suitable for measurement of two-dimensional electric field
JPS63313075A (en) Mechanical type probe for optically measuring potential
JPH01286431A (en) Method and apparatus for optoelectric measurement of voltage waveform on electric conductor
US5459394A (en) Electro-optic measurement device for the measurement of an electric signal in an electronic component
JPS63315961A (en) Mechanical type probe for optically measuring electrical signal
CN101144726A (en) Measuring System of Goose-Hanchen Displacement Based on Wavelength Scanning
EP0650067A1 (en) Electrooptic instrument
EP0294816A2 (en) Voltage detecting device
JPH01193654A (en) voltage measurement probe
EP0294815B1 (en) Voltage detecting device
JPH0580083A (en) Method and apparatus for testing integrated circuit
JP3660997B2 (en) 3D electric field distribution measuring method and 3D electric field distribution measuring apparatus
JPH0638085B2 (en) Electro-optic sampler
US6486952B2 (en) Semiconductor test apparatus
EP0506358B1 (en) Sampling-type optical voltage detector
JP2900856B2 (en) PCB signal waveform measurement device
JPH03167490A (en) Mounted printed board testing equipment
JPS63133068A (en) Apparatus for detecting voltage of circuit
JPH0843499A (en) Electric field sensor for tip type circuit test and its electric field detection method
JPH0799376B2 (en) Voltage measuring device
RU2066870C1 (en) Remote-control electro-optical instrument for very high-speed testers of integral circuits
JPH0787211B2 (en) Integrated circuit test equipment