JPH01165968A - Wafer probing apparatus - Google Patents
Wafer probing apparatusInfo
- Publication number
- JPH01165968A JPH01165968A JP32441587A JP32441587A JPH01165968A JP H01165968 A JPH01165968 A JP H01165968A JP 32441587 A JP32441587 A JP 32441587A JP 32441587 A JP32441587 A JP 32441587A JP H01165968 A JPH01165968 A JP H01165968A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer probing
- radio wave
- absorbing material
- probing apparatus
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Testing Of Individual Semiconductor Devices (AREA)
- Measuring Leads Or Probes (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、高周波半導体素子の特性を測定するブロー
ビング装置に係シ、特にウェハプロービングを行うだめ
の信号取り出し導体針に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a probing device for measuring the characteristics of high-frequency semiconductor devices, and more particularly to a signal extraction conductor needle for wafer probing.
第４図は、従来の信号取り出し導体針（５）を用いたプ
ローブカード（９）を示す。第５図は従来のブロービン
グ装置の信号取り出し導体針の構造の一例を示す。第６
図は従来のウェハプロービング装置にウェハ（６１とプ
ローブカード（９）をセットした図を示す。図において
（１）はセラミック等の絶縁物を用いて作られた絶縁性
ブレード、（２）は絶縁性ブレード（１）の表面に金属
薄膜を形成してなる信号線、（３）は絶縁性ブレード（
１）の端部に設けられ信号線（２）に接続されるプロー
ブ針、（５）は（１１〜（３＋よりなる信号取り出し導
体針、（９）は所定部分に貫通穴００）が設けられ、こ
の貫通穴口αのまわりに電界効果トランジスタ（以下Ｆ
ＥＴと称する）のソース、ドレイン、ゲートの配置と対
応して設けられた３個の信号取り出し導体針（５）が取
り付けられると共にその先端のプローブ針（３）がこの
貫通穴００）を通して下面側に火山する様に設けたプロ
ーブカード（９１である。FIG. 4 shows a probe card (9) using a conventional signal extraction conductor needle (5). FIG. 5 shows an example of the structure of a signal extraction conductor needle of a conventional probing device. 6th
The figure shows a wafer (61) and probe card (9) set in a conventional wafer probing device. In the figure, (1) is an insulating blade made of an insulating material such as ceramic, and (2) is an insulating blade. The signal line is formed by forming a metal thin film on the surface of the insulating blade (1), and the signal line (3) is an insulating blade (
A probe needle is provided at the end of (1) and connected to the signal line (2), (5) is a signal extraction conductor needle consisting of (11 to (3+)), and (9) is provided with a through hole 00 in a predetermined part. , a field effect transistor (hereinafter F
Three signal extraction conductor needles (5) provided corresponding to the arrangement of the source, drain, and gate of the ET (referred to as ET) are attached, and the probe needle (3) at the tip passes through this through hole 00) to the lower surface side. A probe card (91) was installed so that it would erupt into a volcano.
このプローブカード（９）にはその一端に図示しない試
験装置であるウェハプロービング装置の本体と接続され
る端子（１１）が設けられると共に、前記３ケの信号取
り出し導体針（５）の信号線（２）とそれぞれ接続され
る配線（１ｚが設けられる。（６１はこのプローブカー
ド（５１により測定されるＦＥＴが複数形成されたウェ
ハ、（７）はウェハ（６１を載せるブローバステージで
ある。This probe card (9) is provided at one end with a terminal (11) connected to the main body of a wafer probing device which is a test device (not shown), and also has signal lines ( Wires (1z) connected to the probe card (61) are provided. (61 is a wafer on which a plurality of FETs to be measured by the probe card (51) are formed, and (7) is a blower stage on which the wafer (61) is mounted.
従来の装置は、ウェハ上に形成されたＦＥＴのケート、
ドレイン、ソースのパッドの配置にあわせて作製された
プローブカード＋９１とウェハ（６１をウェハロービン
グ装置にセットしてプローブ針（３）をパッド（８）に
接触させ！信号線（２）を介してＦＥＴと電源や電圧計
、電流計等と信号のやりとりを行い、ＦＥＴの静特性を
測定する。１つのＦＥＴの測定を終えるとブローバステ
ージ（７）を移動して次ＯＦＦ、Ｔの測定を行う。Conventional devices include a FET cage formed on a wafer;
Set the probe card +91 and wafer (61) prepared according to the arrangement of the drain and source pads in the wafer roving device, and bring the probe needle (3) into contact with the pad (8)! via the signal line (2). The static characteristics of the FET are measured by exchanging signals with the FET and the power supply, voltmeter, ammeter, etc. Once the measurement of one FET is completed, the blower stage (7) is moved and the next OFF and T measurements are performed. .
しかしながら従来例のプローブカードを用いたＦＥＴの
静特性の測定では、ＦＥＴのゲートとドレインに接触さ
せたプローブ針間に存在する寄生容量を介して、入出力
間に高周波成分の帰還がかかり低周波発振を起す。この
発振によって発生する電磁波が、本来のＦＥＴの静特性
を示す信号に影響を与えて、測定を行うことが極めて困
難であった。However, when measuring the static characteristics of an FET using a conventional probe card, high-frequency components are fed back between the input and output via the parasitic capacitance that exists between the probe needles in contact with the gate and drain of the FET, resulting in low-frequency Causes oscillation. The electromagnetic waves generated by this oscillation affect signals indicating the original static characteristics of the FET, making it extremely difficult to perform measurements.
この発明は上記のような問題点を解消するためになされ
たもので、ＦＥＴの評価測定の際の発振による影響を抑
止し、精度の高い測定が行える装置を得ることを目的と
する。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to provide an apparatus that can suppress the influence of oscillation during evaluation and measurement of FETs and can perform highly accurate measurements.
この発明に係る高周波半導体素子から信号を取り出す、
信号域シ出し導体針はその少なくとも一部に電波吸収材
を設けたものである。Extracting a signal from the high frequency semiconductor device according to the present invention,
The signal range output conductor needle is provided with a radio wave absorbing material on at least a portion thereof.
この発明における信号取り出し導体針は、電波吸収材に
より発振によって発生する電磁波を吸収する。The signal extraction conductor needle in the present invention absorbs electromagnetic waves generated by oscillation using a radio wave absorbing material.
以下、この発明の一実施例を図に従って説明する。第１
図は、この発明の一実施例によるウェハプロービング装
置の信号域シ出し導体針の構造を示し、第２図は第１図
の要部断面図である。第３図は、この発明によるウェハ
プロービング装置にウェハ（６１をセットした説明図で
ある。図において、（４１は絶縁性ブレード（１１及び
信号線（２）上に発振の起り易いプローブ針（３）のな
るべく近くを覆うように取りつけられた電波吸収材であ
る。この電波吸収材（４１はフェライトを用いてつくら
れている。このようにしてつくった信号取り出し導体針
（５）をウェハ（６）上のパッド（８）の配回に従って
プローブカード（９）上に半田付けして、ブローバステ
ージ（７）上にセットしたウェハ（６１と共にウェハプ
ロービング装置にセットして測定を行う。An embodiment of the present invention will be described below with reference to the drawings. 1st
The figure shows the structure of a signal range extraction conductor needle of a wafer probing apparatus according to an embodiment of the present invention, and FIG. 2 is a sectional view of the main part of FIG. 1. FIG. 3 is an explanatory diagram of a wafer (61) set in the wafer probing apparatus according to the present invention. ) is a radio wave absorbing material attached to cover as close as possible to the wafer (6).This radio wave absorbing material (41 is made of ferrite). The upper pads (8) are soldered onto the probe card (9) according to the arrangement, and the wafer (61) is set on the wafer probing device together with the wafer (61) set on the blower stage (7) for measurement.
前記電波吸収材（４）により、ＦＥＴの評価測定の際の
発振による電磁波を吸収し、測定の精度を高めることが
できる。The radio wave absorbing material (4) can absorb electromagnetic waves caused by oscillation during evaluation and measurement of the FET, thereby improving measurement accuracy.
なお、上記一実施例では、電波吸収源としてフェライト
を用いたが、他の磁性材料を用いても上記一実施例と同
様の効果を得ることができる。In the above embodiment, ferrite was used as the radio wave absorption source, but the same effect as in the above embodiment can be obtained by using other magnetic materials.
以上のように、この発明によれば、高周波半導体素子の
評価測定の際に発振により発生する電磁波を電波吸収材
で吸収するので、高精度の測定が可能となる。As described above, according to the present invention, since the electromagnetic waves generated by oscillation during evaluation and measurement of high-frequency semiconductor devices are absorbed by the radio wave absorbing material, highly accurate measurements are possible.
第１図はこの発明の一実施例によるウェハプロービング
装置の信号取り出し導体針を示す正面図、第２図はその
要部断面図、第３図は第１図の信号取り出し導体針をブ
ローバスデージ上にセットされたウェハのパッドにあて
た状態を示す説明図、第４図は従来のプローブカードの
斜視図、第５図は従来の信号取り出し導体針の正面図、
第６図は従来のウェハプロービング装置にウェハをセッ
トし、プローブカードをセットした状態を示す説明図で
ある。
＋Ｉ＋は絶縁性ブレード、（２）は信号線、（３）はプ
ローブ針、（４）は電波吸収材、（５）は信号取り出し
導体針、＋６１１：ウェハ、（７）はブローバステージ
、（８）はパッド、（９）はプローブカード、０．０１
は貫通穴、（１，１）は端子、ａ２）は配線である。
なお、図中同一符号は、それぞれ同一または相等部分を
示Ｔ０FIG. 1 is a front view showing a signal extraction conductor needle of a wafer probing apparatus according to an embodiment of the present invention, FIG. 2 is a sectional view of the main part thereof, and FIG. 4 is a perspective view of a conventional probe card, and FIG. 5 is a front view of a conventional signal extraction conductor needle.
FIG. 6 is an explanatory diagram showing a state in which a wafer and a probe card are set in a conventional wafer probing apparatus. +I+ is an insulating blade, (2) is a signal line, (3) is a probe needle, (4) is a radio wave absorber, (5) is a signal extraction conductor needle, +611: wafer, (7) is a blower stage, (8 ) is a pad, (9) is a probe card, 0.01
is a through hole, (1, 1) is a terminal, and a2) is a wiring. In addition, the same reference numerals in the figures indicate the same or equivalent parts, respectively.
Claims (3)
装置の前記高周波半導体素子から信号を取り出す信号取
り出し導体針の少なくとも一部に電波吸収材を設けたこ
とを特徴とするウェハプロービング装置。(1) A wafer probing device for measuring characteristics of a high-frequency semiconductor device, characterized in that a radio wave absorbing material is provided on at least a portion of a signal extraction conductor needle for extracting a signal from the high-frequency semiconductor device.
特許請求の範囲第１項記載のウェハプロービング装置。(2) The wafer probing apparatus according to claim 1, wherein the radio wave absorbing material is a magnetic material.
電界効果トランジスタのゲートあるいはドレインの電極
パッドに対応する位置になるように配置したことを特徴
とする特許請求の範囲第１項又は第２項記載のウェハプ
ロービング装置。(3) The signal extraction conductor needle equipped with radio wave absorbing material is
3. The wafer probing apparatus according to claim 1, wherein the wafer probing apparatus is arranged at a position corresponding to a gate or drain electrode pad of a field effect transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32441587A JPH01165968A (en) | 1987-12-22 | 1987-12-22 | Wafer probing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32441587A JPH01165968A (en) | 1987-12-22 | 1987-12-22 | Wafer probing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01165968A true JPH01165968A (en) | 1989-06-29 |
Family
ID=18165540
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32441587A Pending JPH01165968A (en) | 1987-12-22 | 1987-12-22 | Wafer probing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01165968A (en) |
Cited By (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000208571A (en) * | 1999-01-18 | 2000-07-28 | Advantest Corp | Method and device for testing device and card for measurement |
| KR100441115B1 (en) * | 2001-06-27 | 2004-07-19 | 주식회사 인터와이즈 | Java Compile-On-Demand Service System for Accelerating Processing Speed of Java Program on Data Processing System And Method Thereof |
| US7138810B2 (en) | 2002-11-08 | 2006-11-21 | Cascade Microtech, Inc. | Probe station with low noise characteristics |
| US7138813B2 (en) | 1999-06-30 | 2006-11-21 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
| US7164279B2 (en) | 1995-04-14 | 2007-01-16 | Cascade Microtech, Inc. | System for evaluating probing networks |
| US7176705B2 (en) | 2004-06-07 | 2007-02-13 | Cascade Microtech, Inc. | Thermal optical chuck |
| US7187188B2 (en) | 2003-12-24 | 2007-03-06 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
| US7190181B2 (en) | 1997-06-06 | 2007-03-13 | Cascade Microtech, Inc. | Probe station having multiple enclosures |
| US7221146B2 (en) | 2002-12-13 | 2007-05-22 | Cascade Microtech, Inc. | Guarded tub enclosure |
| US7221172B2 (en) | 2003-05-06 | 2007-05-22 | Cascade Microtech, Inc. | Switched suspended conductor and connection |
| US7250779B2 (en) | 2002-11-25 | 2007-07-31 | Cascade Microtech, Inc. | Probe station with low inductance path |
| US7250626B2 (en) | 2003-10-22 | 2007-07-31 | Cascade Microtech, Inc. | Probe testing structure |
| US7268533B2 (en) | 2001-08-31 | 2007-09-11 | Cascade Microtech, Inc. | Optical testing device |
| US7304488B2 (en) | 2002-05-23 | 2007-12-04 | Cascade Microtech, Inc. | Shielded probe for high-frequency testing of a device under test |
| US7355420B2 (en) | 2001-08-21 | 2008-04-08 | Cascade Microtech, Inc. | Membrane probing system |
| US7403028B2 (en) | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
| US7417446B2 (en) | 2002-11-13 | 2008-08-26 | Cascade Microtech, Inc. | Probe for combined signals |
| US7420381B2 (en) | 2004-09-13 | 2008-09-02 | Cascade Microtech, Inc. | Double sided probing structures |
| US7443186B2 (en) | 2006-06-12 | 2008-10-28 | Cascade Microtech, Inc. | On-wafer test structures for differential signals |
| US7449899B2 (en) | 2005-06-08 | 2008-11-11 | Cascade Microtech, Inc. | Probe for high frequency signals |
| US7456646B2 (en) | 2000-12-04 | 2008-11-25 | Cascade Microtech, Inc. | Wafer probe |
| US7498829B2 (en) | 2003-05-23 | 2009-03-03 | Cascade Microtech, Inc. | Shielded probe for testing a device under test |
| US7504842B2 (en) | 1997-05-28 | 2009-03-17 | Cascade Microtech, Inc. | Probe holder for testing of a test device |
| US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
| US7609077B2 (en) | 2006-06-09 | 2009-10-27 | Cascade Microtech, Inc. | Differential signal probe with integral balun |
| US7619419B2 (en) | 2005-06-13 | 2009-11-17 | Cascade Microtech, Inc. | Wideband active-passive differential signal probe |
| US10267848B2 (en) | 2008-11-21 | 2019-04-23 | Formfactor Beaverton, Inc. | Method of electrically contacting a bond pad of a device under test with a probe |
-
1987
- 1987-12-22 JP JP32441587A patent/JPH01165968A/en active Pending
Cited By (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7164279B2 (en) | 1995-04-14 | 2007-01-16 | Cascade Microtech, Inc. | System for evaluating probing networks |
| US7504842B2 (en) | 1997-05-28 | 2009-03-17 | Cascade Microtech, Inc. | Probe holder for testing of a test device |
| US7190181B2 (en) | 1997-06-06 | 2007-03-13 | Cascade Microtech, Inc. | Probe station having multiple enclosures |
| JP2000208571A (en) * | 1999-01-18 | 2000-07-28 | Advantest Corp | Method and device for testing device and card for measurement |
| US7138813B2 (en) | 1999-06-30 | 2006-11-21 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
| US7292057B2 (en) | 1999-06-30 | 2007-11-06 | Cascade Microtech, Inc. | Probe station thermal chuck with shielding for capacitive current |
| US7495461B2 (en) | 2000-12-04 | 2009-02-24 | Cascade Microtech, Inc. | Wafer probe |
| US7456646B2 (en) | 2000-12-04 | 2008-11-25 | Cascade Microtech, Inc. | Wafer probe |
| KR100441115B1 (en) * | 2001-06-27 | 2004-07-19 | 주식회사 인터와이즈 | Java Compile-On-Demand Service System for Accelerating Processing Speed of Java Program on Data Processing System And Method Thereof |
| US7355420B2 (en) | 2001-08-21 | 2008-04-08 | Cascade Microtech, Inc. | Membrane probing system |
| US7268533B2 (en) | 2001-08-31 | 2007-09-11 | Cascade Microtech, Inc. | Optical testing device |
| US7304488B2 (en) | 2002-05-23 | 2007-12-04 | Cascade Microtech, Inc. | Shielded probe for high-frequency testing of a device under test |
| US7518387B2 (en) | 2002-05-23 | 2009-04-14 | Cascade Microtech, Inc. | Shielded probe for testing a device under test |
| US7489149B2 (en) | 2002-05-23 | 2009-02-10 | Cascade Microtech, Inc. | Shielded probe for testing a device under test |
| US7482823B2 (en) | 2002-05-23 | 2009-01-27 | Cascade Microtech, Inc. | Shielded probe for testing a device under test |
| US7436194B2 (en) | 2002-05-23 | 2008-10-14 | Cascade Microtech, Inc. | Shielded probe with low contact resistance for testing a device under test |
| US7295025B2 (en) | 2002-11-08 | 2007-11-13 | Cascade Microtech, Inc. | Probe station with low noise characteristics |
| US7138810B2 (en) | 2002-11-08 | 2006-11-21 | Cascade Microtech, Inc. | Probe station with low noise characteristics |
| US7453276B2 (en) | 2002-11-13 | 2008-11-18 | Cascade Microtech, Inc. | Probe for combined signals |
| US7417446B2 (en) | 2002-11-13 | 2008-08-26 | Cascade Microtech, Inc. | Probe for combined signals |
| US7250779B2 (en) | 2002-11-25 | 2007-07-31 | Cascade Microtech, Inc. | Probe station with low inductance path |
| US7221146B2 (en) | 2002-12-13 | 2007-05-22 | Cascade Microtech, Inc. | Guarded tub enclosure |
| US7221172B2 (en) | 2003-05-06 | 2007-05-22 | Cascade Microtech, Inc. | Switched suspended conductor and connection |
| US7501842B2 (en) | 2003-05-23 | 2009-03-10 | Cascade Microtech, Inc. | Shielded probe for testing a device under test |
| US7498829B2 (en) | 2003-05-23 | 2009-03-03 | Cascade Microtech, Inc. | Shielded probe for testing a device under test |
| US7250626B2 (en) | 2003-10-22 | 2007-07-31 | Cascade Microtech, Inc. | Probe testing structure |
| US7187188B2 (en) | 2003-12-24 | 2007-03-06 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
| US7362115B2 (en) | 2003-12-24 | 2008-04-22 | Cascade Microtech, Inc. | Chuck with integrated wafer support |
| US7176705B2 (en) | 2004-06-07 | 2007-02-13 | Cascade Microtech, Inc. | Thermal optical chuck |
| US7420381B2 (en) | 2004-09-13 | 2008-09-02 | Cascade Microtech, Inc. | Double sided probing structures |
| US8013623B2 (en) | 2004-09-13 | 2011-09-06 | Cascade Microtech, Inc. | Double sided probing structures |
| US7535247B2 (en) | 2005-01-31 | 2009-05-19 | Cascade Microtech, Inc. | Interface for testing semiconductors |
| US7449899B2 (en) | 2005-06-08 | 2008-11-11 | Cascade Microtech, Inc. | Probe for high frequency signals |
| US7619419B2 (en) | 2005-06-13 | 2009-11-17 | Cascade Microtech, Inc. | Wideband active-passive differential signal probe |
| US7609077B2 (en) | 2006-06-09 | 2009-10-27 | Cascade Microtech, Inc. | Differential signal probe with integral balun |
| US7403028B2 (en) | 2006-06-12 | 2008-07-22 | Cascade Microtech, Inc. | Test structure and probe for differential signals |
| US7443186B2 (en) | 2006-06-12 | 2008-10-28 | Cascade Microtech, Inc. | On-wafer test structures for differential signals |
| US10267848B2 (en) | 2008-11-21 | 2019-04-23 | Formfactor Beaverton, Inc. | Method of electrically contacting a bond pad of a device under test with a probe |
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