JPH01147803A - Resistance paste - Google Patents
Resistance pasteInfo
- Publication number
- JPH01147803A JPH01147803A JP62307823A JP30782387A JPH01147803A JP H01147803 A JPH01147803 A JP H01147803A JP 62307823 A JP62307823 A JP 62307823A JP 30782387 A JP30782387 A JP 30782387A JP H01147803 A JPH01147803 A JP H01147803A
- Authority
- JP
- Japan
- Prior art keywords
- resistance
- resistance paste
- paste
- boron nitride
- glass frit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011521 glass Substances 0.000 claims abstract description 17
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052582 BN Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000007787 solid Substances 0.000 abstract description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 abstract description 3
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 abstract description 2
- 150000002148 esters Chemical class 0.000 abstract description 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 abstract 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- -1 aliphatic alcohols Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 239000000292 calcium oxide Substances 0.000 description 2
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010665 pine oil Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229940116411 terpineol Drugs 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 1
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- 101100494448 Caenorhabditis elegans cab-1 gene Proteins 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000193 polymethacrylate Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Pigments, Carbon Blacks, Or Wood Stains (AREA)
- Paints Or Removers (AREA)
- Non-Adjustable Resistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、アルミナ等の基板上に導電体としての銅等の
卑金属と共に厚膜抵抗体として形成可能な抵抗ペースト
、特にその組成に関する。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a resistive paste that can be formed as a thick film resistor on a substrate such as alumina together with a base metal such as copper as a conductor, and in particular to its composition.
従来波′とその問題α
近年、厚膜電気回路基板の電極ないし導電パターンには
銅等の卑金属が多用きれる傾向にあり、銅と共に還元性
雰囲気中で焼成可能な抵抗ペーストが求められている。Conventional wave' and its problems α In recent years, base metals such as copper have been increasingly used in electrodes or conductive patterns of thick film electric circuit boards, and there is a demand for resistance pastes that can be fired together with copper in a reducing atmosphere.
この種の抵抗ペーストは、基本的には、溶剤としての有
機ビヒクル中に導電゛ 成分としての金属六ホウ化物と
結合剤としてのガラスフリットを分散したものであり、
還元性雰囲気中で焼成して厚膜抵抗体とした際、良好な
特性を示すことが必要である。This type of resistance paste is basically a dispersion of a metal hexaboride as a conductive component and a glass frit as a binder in an organic vehicle as a solvent.
It is necessary that the thick film resistor exhibit good characteristics when fired in a reducing atmosphere to form a thick film resistor.
そこで、従来では、特公昭59−6481号公報、特開
昭55−27700号公報、特開昭55−29199号
公報等に記載の如く、金属六ホウ化物例えばLaBgと
、耐還元性ガラス例えばホウアルミン酸カルシウムガラ
ス、ホウケイ酸Ba 、 Ca系ガラスを含有した抵抗
ペーストが提案されている。Therefore, conventionally, as described in Japanese Patent Publication No. 59-6481, Japanese Patent Application Laid-open No. 55-27700, Japanese Patent Application Laid-Open No. 55-29199, metal hexaborides such as LaBg and reduction-resistant glasses such as boalumin were used. Resistance pastes containing calcium oxide glass, Ba borosilicate glass, and Ca-based glass have been proposed.
しかしながら、ここで得られる抵抗ペーストは、比較的
小径のLaB aを使用すると、焼成して厚膜抵抗体と
した際の面積抵抗値が10〜IOKΩの範囲での実用化
は可能であるが、IOKΩを超えると抵抗体としての重
要な特性である抵抗温度特性(TCR)が−1000p
pm/ ”C以上に劣化し、実用化できないという問題
点を有している。However, the resistance paste obtained here can be put to practical use in the range of 10 to IOKΩ when fired into a thick film resistor by using LaBa with a relatively small diameter. When IOKΩ is exceeded, the temperature resistance characteristic (TCR), which is an important characteristic of a resistor, decreases by -1000p.
It has the problem that it deteriorates to more than pm/''C and cannot be put into practical use.
そこで、本発明は、面積抵抗値が2MΩ程度までTCR
特性に優れた厚膜抵抗体を得ることができ、有機ビヒク
ル中の固体成分(導電成分とガラスフリットと窒化ホウ
素)の混合比に応じて、厚膜抵抗体としたとき、一定の
安定した抵抗値を再現できる抵抗ペーストを提供するこ
とを目的とする。Therefore, the present invention provides TCR up to a sheet resistance value of about 2MΩ.
A thick film resistor with excellent characteristics can be obtained, and depending on the mixing ratio of solid components (conductive component, glass frit, and boron nitride) in the organic vehicle, a constant and stable resistance can be obtained when the thick film resistor is made. The purpose is to provide a resistor paste that can reproduce the values.
発浬I肩邑戊
本発明に係る抵抗ペーストは、有機ビヒクル中に金属水
ホウ化物と耐還元性ガラスフリットに加えて、これらの
固体成分に対して約5〜30吐%の窒化ホウ素を分散さ
せたことを特徴とする。The resistance paste according to the present invention contains, in addition to a metal hydroboride and a reduction-resistant glass frit, dispersed in an organic vehicle about 5 to 30% of boron nitride based on these solid components. It is characterized by the fact that
有機ビヒクルは溶剤として使用される不活性液体である
。使用しうる有機ビヒクルの例は、詣肪族アルコール、
その様なアルコールのエステル例えばアセテート及びプ
ロピオネート、テルペン例えば松根油、テルピネオール
その他、溶媒例えば松根油及びエチレングリフールモノ
アセテートのモノブチルエーテル中の樹脂例えば低級ア
ルコールのポリメタクリレートの溶液又はエチルセルロ
ースの溶液である。アクリル系樹脂をα−テレピネオー
ルで溶解したものが特に好ましい。ビヒクルは基板への
塗布後進速な硬化を促進きせるだめの揮発性液体を含有
していても良い。Organic vehicles are inert liquids used as solvents. Examples of organic vehicles that can be used are aliphatic alcohols,
Esters of such alcohols such as acetate and propionate, terpenes such as pine oil, terpineol, etc., solutions of resins such as polymethacrylates of lower alcohols or solutions of ethylcellulose in solvents such as pine oil and monobutyl ether of ethylene glyfur monoacetate. Particularly preferred is an acrylic resin dissolved in α-terpineol. The vehicle may contain a volatile liquid to promote rapid curing after application to the substrate.
本発明に係る抵抗ペースト中における固体成分に対する
有機ビヒクルの比率は、固体成分の分散方法や使用され
るビヒクルの種類によって必ずしも一定ではない。The ratio of organic vehicle to solid components in the resistance paste of the present invention is not necessarily constant depending on the method of dispersing the solid components and the type of vehicle used.
金属水ホウ化物は導電成分として使用きれ、例えばLa
Ba 、 YBa * CaB1 * BaBs 、
Sr’s等を含む。Metal hydroborides can be used as conductive components, such as La
Ba, YBa*CaB1*BaBs,
Including Sr's etc.
ガラスフリットは焼成時の導電成分ないしは基板への結
合剤として使用され、それ自体絶縁性を有し、BsOs
、 Sing 、’ BaO、CaO、KtOr M
gO、SrO。Glass frit is used as a conductive component during firing or as a bonding agent to the substrate, and has an insulating property, and BsOs
, Sing ,' BaO, CaO, KtOr M
gO, SrO.
ZrOを等のホウケイ酸アルカリ土類酸化物を含み、特
に、酸化ニオブ(NbxOi)を約0.5〜5.0mo
1%添加すると、抵抗値の増加を押さえるのに有効であ
る。Contains borosilicate alkaline earth oxides such as ZrO, particularly about 0.5 to 5.0 mo of niobium oxide (NbxOi)
Addition of 1% is effective in suppressing increase in resistance value.
窒化ホウ素(BN)は、以下の第1表に示す様に、厚膜
抵抗体に焼成した際の抵抗値の増加を抑え、良好なTC
R特性を得るために用いられる。BNを添加する効果は
固体成分に対して約5wt%を超えるところから発揮さ
れ始め、約30吐%を超えると却って抵抗値が増加する
。As shown in Table 1 below, boron nitride (BN) suppresses the increase in resistance value when fired into thick film resistors and provides good TC.
Used to obtain R characteristics. The effect of adding BN begins to be exhibited when the amount exceeds about 5 wt % based on the solid component, and when it exceeds about 30 wt %, the resistance value increases on the contrary.
なお、金属水ホウ化物とガラスフリットと窒化ホウ素の
混合比は、必要とされる抵抗値に応じて任意の値をとる
ことができる。Note that the mixing ratio of metal water boride, glass frit, and boron nitride can take any value depending on the required resistance value.
実施例
以下、本発明に係る抵抗ペーストの実施例につき、詳説
する。EXAMPLES Hereinafter, examples of the resistance paste according to the present invention will be explained in detail.
以下の第1表に示す実施例1〜7の抵抗ペーストは、溶
剤としてのアクリル系樹脂−α−テレピネオールからな
る有機ビヒクル中に導電成分としてのLaBaと結合剤
としてのガラスフリットとBNを各実施例1〜7ごとに
示す混合比で分散したものである。The resistance pastes of Examples 1 to 7 shown in Table 1 below were prepared by incorporating LaBa as a conductive component and glass frit and BN as binders in an organic vehicle consisting of acrylic resin-α-terpineol as a solvent. They were dispersed at the mixing ratios shown in each of Examples 1 to 7.
[以 下 余 白]
使用したLaB 6は、振動ミル処理で平均粒径0.8
μmとしたものである。ガラスフリットは、Ba0(1
9,39mo1%)、 Cab(9,05mo1%)、
BzO* (35,26mo1%)。[Margin below] The LaB 6 used was treated with a vibration mill to reduce the average particle size to 0.8.
It is expressed in μm. The glass frit is Ba0(1
9,39mo1%), Cab (9,05mo1%),
BzO* (35,26 mo1%).
SiOx (30,97mo1%L Nb*Os (2
,39mo1%)、KzO(2,95mo1%)の組成
からなるものを使用した。SiOx (30,97mo1%L Nb*Os (2
, 39 mo1%) and KzO (2.95 mo1%).
具体的には、ガラスフリット成分を構成する原料を混合
比に応じて混合し、この混合原料を白金るつぼ中で溶融
許せ、冷水中に投入し、湿式ボールミルにより粉砕して
フリット化する。Specifically, the raw materials constituting the glass frit component are mixed according to the mixing ratio, the mixed raw materials are allowed to melt in a platinum crucible, are poured into cold water, and are ground by a wet ball mill to form a frit.
以上のLaB aとガラスフリットとBNの組成物をツ
ーパーミル処理することによって有機ビヒクル中に分散
させてペースト形態とする。The above composition of LaBa, glass frit, and BN is dispersed in an organic vehicle by two-part milling to form a paste.
有機ビヒクルは、各実施例において、85wt%のα−
テレピネオール溶液中に、15吐%のアクリル系樹脂を
溶解したものを使用した。この有機ビヒクルは固体成分
に対して28wt%である。 ′−また、第2表に
示す様に、比較例1〜3として前記各実施例と同様の成
分を用い、同様の手順で抵抗ペーストを製造した。比較
例1.2はBNを添加しない例、比較例3は他の固体成
分に対して40wt%のAINを添加した例である。The organic vehicle is 85 wt% α-
A terpineol solution containing 15% acrylic resin dissolved therein was used. The organic vehicle is 28% by weight based on solids. '-Also, as shown in Table 2, as Comparative Examples 1 to 3, resistance pastes were manufactured using the same components as in each of the above-mentioned Examples and following the same procedure. Comparative Example 1.2 is an example in which BN is not added, and Comparative Example 3 is an example in which 40 wt % of AIN is added to other solid components.
以上の如く製造された抵抗ペーストを、アルミナ基板上
に予備焼成した銅電極間にスクリーン印刷し、120℃
で10分間乾燥させた後焼成した。焼成は900°Cで
窒素雰囲気炉内で行なった。The resistor paste produced as described above was screen printed on an alumina substrate between pre-fired copper electrodes, and heated to 120°C.
After drying for 10 minutes, it was fired. Firing was performed at 900°C in a nitrogen atmosphere furnace.
各実施例及び比較例の厚膜抵抗体における面積抵抗値と
TCRは第1表、第2表に示す通りである。実施例1〜
7のものは、いずれも2.3に〜2.3MΩの面積抵抗
値を示し、TCR特性も良好である。面積抵抗値が2.
3MΩと最も高い実施例6のものでもTCR特性は一3
52ppm/ ”Cであり、実用レベルである。The sheet resistance values and TCR of the thick film resistors of each example and comparative example are shown in Tables 1 and 2. Example 1~
All of No. 7 exhibited sheet resistance values of 2.3 to 2.3 MΩ, and had good TCR characteristics. The area resistance value is 2.
Even in Example 6, which has the highest value of 3MΩ, the TCR characteristic is 13.
It is 52 ppm/''C, which is at a practical level.
これに対して、BNを添加しない比較例1,2のもので
は、面積抵抗値が低く、かつ、得られる抵抗値の範囲も
狭い。また、40wt%のBNを添加した比較例3のも
のでは、面積抵抗値が169以上と実質上回路素子の抵
抗体として機能しなくなる。On the other hand, Comparative Examples 1 and 2 in which BN was not added had low sheet resistance values and a narrow range of resistance values. Further, in Comparative Example 3 in which 40 wt % of BN was added, the sheet resistance value was 169 or more, and it virtually did not function as a resistor of a circuit element.
そこで、抵抗値を下げるためにガラスフリットの混合比
を減少させると、固体成分間の結合力が弱まって強固な
抵抗膜が形成されず、基板との密着性も劣化する。Therefore, when the mixing ratio of the glass frit is reduced in order to lower the resistance value, the bonding force between the solid components is weakened, a strong resistance film is not formed, and the adhesion with the substrate is also deteriorated.
なお、本発明に係る抵抗ペーストは前記各実施例に限定
するものではなく、有機ビヒクノ呟金属六ホウ化物、ガ
ラスフリットの主成分としてのホウケイ酸アルカリ土類
酸化物は本発明の要旨の範囲内で種々のものを選択でき
、またその組成比率も任意である。It should be noted that the resistance paste according to the present invention is not limited to the above-mentioned examples, and the organic bisilicate metal hexaboride and the borosilicate alkaline earth oxide as the main component of the glass frit are within the scope of the present invention. Various types can be selected, and their composition ratios are also arbitrary.
発明の効果
以上の説明で明らかな様に、本発明によれば、固体成分
に対して約5〜30wt%の窒化ホウ素を添加する様に
したため、厚膜抵抗体としたとき、面積抵抗値10にΩ
を超えるものでも良好なTCR特性を示す抵抗ペースト
を得ることができる。しかも、各固体成分の混合比を調
整することにより広い範囲で良好な特性の抵抗値を有す
るものを再現性良く得ることができる。Effects of the Invention As is clear from the above explanation, according to the present invention, approximately 5 to 30 wt% of boron nitride is added to the solid component, so when a thick film resistor is formed, the area resistance value is 10. niΩ
It is possible to obtain a resistive paste exhibiting good TCR characteristics even when the resistance exceeds the above. Furthermore, by adjusting the mixing ratio of each solid component, it is possible to obtain resistivity values with good characteristics over a wide range with good reproducibility.
特許出願人 株式会社村田製作所Patent applicant: Murata Manufacturing Co., Ltd.
Claims (1)
スフリットを分散した抵抗ペーストにおいて、前記金属
六ホウ化物と耐還元性ガラスフリットに対して約5〜3
0wt%の窒化ホウ素を含むこと、を特徴とする抵抗ペ
ースト。(1) In a resistance paste in which a metal hexaboride and a reduction-resistant glass frit are dispersed in an organic vehicle, about 5 to 3
A resistance paste comprising 0 wt% boron nitride.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62307823A JPH01147803A (en) | 1987-12-04 | 1987-12-04 | Resistance paste |
| US07/279,529 US4985176A (en) | 1987-12-04 | 1988-12-02 | Resistive paste |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62307823A JPH01147803A (en) | 1987-12-04 | 1987-12-04 | Resistance paste |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01147803A true JPH01147803A (en) | 1989-06-09 |
Family
ID=17973635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62307823A Pending JPH01147803A (en) | 1987-12-04 | 1987-12-04 | Resistance paste |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01147803A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115954134A (en) * | 2023-02-16 | 2023-04-11 | 苏州三环科技有限公司 | Resistance paste and preparation method thereof |
-
1987
- 1987-12-04 JP JP62307823A patent/JPH01147803A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115954134A (en) * | 2023-02-16 | 2023-04-11 | 苏州三环科技有限公司 | Resistance paste and preparation method thereof |
| CN115954134B (en) * | 2023-02-16 | 2023-09-26 | 苏州三环科技有限公司 | Resistor slurry and preparation method thereof |
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