JPH01111871A - Plasma vapor phase growing device - Google Patents

Abstract

PURPOSE:To improve the treatment ability per unit time by forming electrodes to be installed with semiconductor substrates to multiple layers and forming electrodes for impressing high-frequency electric power to multiple layers as well. CONSTITUTION:The reaction chamber of this device is constituted by disposing a preewacuation chamber 1 before a film forming chamber 2 and a leak chamber 3 behind said chamber. Both faces of the 1st electrode unit 41 are used as substrate installation faces, on which the plural 1st electrodes are disposed in a comb shape. A 2nd electrode unit 6 disposed with the plural 2nd electrodes which make a pair with the 1st electrodes in a comb shape is prepd. The unit 41 disposed with the semiconductor substrates on both faces of the 1st electrodes is first put into the chamber 1 and is put into the chamber 2 after evacuation. The unit 6 moves from the side face to insert the electrodes of the unit 6 between the electrodes of the 1st electrode unit 42 when the above-mentioned unit comes to the position of the unit 42. Gas is introduced into the chamber 2 and after the pressure thereof is adjusted, the high-frequency electric power is impressed to the electrodes of the unit 6. The unit 6 is retreated after the treatment and the unit 42 is put into the chamber 3. The unit is taken out of the chamber after the atm. pressure is attained.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a plasma vapor phase growth apparatus, and particularly to a plasma vapor phase growth apparatus that has high process throughput in a plasma vapor phase growth process.

[Conventional technology]

Conventionally, a parallel plate type is used as a plasma vapor deposition apparatus, and as shown in FIGS. 3(a) and 3(b), this type has two electrodes 31 and 33 placed in parallel.
On one side thereof, a semiconductor substrate 32 on which a thin film was to be deposited was placed parallel to an electrode 31 serving as a susceptor.

34 is a high frequency power source.

In addition, conventional plasma vapor phase epitaxy equipment has been put into practical use in which susceptors are placed on both sides of a fixed electrode to increase process throughput, but due to the excessive complexity of the equipment, this It is extremely difficult to put the above multilayered electrodes and susceptors into practical use.

[Problem that the invention seeks to solve]

The above-mentioned conventional plasma vapor phase epitaxy apparatus having parallel plate type electrodes has excellent uniformity in film thickness and film quality, but as mentioned above, since the semiconductor substrate is placed face down on one of the electrodes, the susceptor, The processing capacity depends on the electrode area or the susceptor area, and there is a drawback that the processing capacity per unit time cannot be expected to be significantly improved unless the diameter of the electrode is increased.

This drawback becomes more noticeable as the diameter of the semiconductor substrate increases.

An object of the present invention is to provide a plasma vapor phase growth apparatus that solves the above problems.

[Differences between the invention and the prior art]

In contrast to the above-mentioned conventional parallel plate type plasma vapor deposition apparatus, the present invention increases the throughput per unit time by multilayering the electrodes on which the semiconductor substrate is placed and at the same time multilayering the electrodes for applying high frequency power. The difference is that it can greatly improve

[Means for solving problems]

The present invention comprises: a first electrode on which a semiconductor substrate on which a thin film is to be deposited; a means for introducing and exhausting a gas containing an element for forming a thin film into a vacuum chamber; and applying high frequency power for discharging the gas. a first electrode unit in which a plurality of first electrodes are arranged in a comb-teeth shape with both surfaces of the first electrode being semiconductor substrate installation surfaces; A pair with a second electrode unit in which a plurality of second electrodes paired with the first electrode are arranged in a comb-teeth shape, and each second electrode is arranged alternately so as to face the first electrode. This is a plasma vapor phase growth apparatus characterized by the following equipment.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

(Example 1) FIG. 1(a) is a plan view showing a reaction chamber of a plasma vapor phase growth apparatus of the present invention. In the figure, a preliminary exhaust chamber 1 is installed in the front stage of the film forming chamber 2, and a leak chamber 3 is installed in the rear stage. 7 is a shutter, 10 is a gas inlet, and 11 is an exhaust port.

In FIGS. 1(b) and 1(c), the present invention provides a plurality of first electrodes 4 with both surfaces of the first electrode 4a on which the semiconductor substrate 5 on which the thin film is to be deposited is placed as the substrate installation surface (susceptor).
a, 4a, . A pair of second electrode units 6 is provided in which each second electrode unit 6a is alternately arranged so as to face the first electrode 48. 8a
, 8b, 9a, and 9b are insulating fixtures that hold the electrodes 4a and 6a together in a comb-teeth shape.

In the embodiment, first, the first electrode unit 41 in which the semiconductor substrate 5 is installed on both sides of the first electrode 4a enters the preliminary evacuation chamber 1, and after being evacuated, enters the film forming chamber 2, and the first electrode unit 41 Come to the position shown as □. Then, the second electrode unit 6 moves from the side, and as shown in FIG. 1(b), a second electrode is formed between the electrodes 4a of the first electrode unit 4
The electrodes 6a of the electrode unit 6 are inserted, and the two electrodes 4a and 68 are arranged alternately. At this time, since the electrode unit 6 moves from the side of the electrode unit 4, there are fewer problems with particles when the electrode moves. After gas is introduced into the film forming chamber 2 and the pressure is adjusted, high frequency power is applied to each electrode 6a of the electrode unit 6, but since the first electrode unit 4 is grounded, the discharge occurs immediately. Start. After processing, the electrode unit 6 moves back and the electrode unit 42
enters the leak chamber 3, moves to the position shown as the electrode unit 43, reaches atmospheric pressure, and is then taken out.

Note that the means for installing the semiconductor substrate 5, the means for moving the electrode unit 4, and the means for grounding do not matter, and the means for moving the electrode unit 6 also do not matter, but after being inserted so as to intersect with the electrode unit 4, high frequency Since power is applied, AQ
It is made of metal such as, and intersects with the electrode unit 4 at equal intervals.

In addition to the above-described reaction chamber, the plasma vapor deposition apparatus of the present invention introduces a gas containing as a constituent element a thin film to be deposited on a semiconductor substrate 5 into a film forming chamber 2 through a gas inlet 10 under a constant pressure. (approximately I Torr)
means for evacuating more than the said constant pressure (approximately I Tor
r) between electrode units 4 and 6 (usually 50KHz).
~13.56MHz) power (approximately 0.5 to 5KW)
), and by discharging the gas, by using this plasma vapor phase growth apparatus, a large amount of film with good uniformity in film thickness and film quality can be deposited in a short time.

(Example 2) FIG. 2 is a plan view of a reaction chamber in a second example of the present invention. 21 is a film forming chamber, 22 is an intermediate chamber, 23 is a sputtering chamber, 28 is a shutter that isolates each chamber, and 29a.

29b is a gas inlet, and 30a and 30b are exhaust ports.

Further, 4□ and 4□ are the first electrode units shown in FIG. 1(c), and the unit 4□ is grounded. Also 61
, 6□ are the electrode units shown in FIG. 2 shown in FIG. 1(c), the unit 6□ is grounded, and the unit 61 also serves as a high frequency application electrode.

The feature of the second embodiment is that a sputtering chamber is provided. The electrode units 6□ are grounded and inserted alternately with the electrode units 4□. The first electrode unit 4□ also serves as an electrode for applying high frequency. Next, Ar is introduced from the gas inlet 29b, and after being exhausted from the exhaust port 30b to a constant pressure, the electrode unit 6□
High frequency power is applied between and 42, and the thin film deposited on the substrate 5 in the film forming chamber 21 is sputtered by Ar ions. In this embodiment, since thin film deposition and sputtering can be performed continuously or repeatedly, there is an advantage that, for example, interlayer film deposition and planarization in multilayer wiring can be performed with good uniformity and in a large amount.

〔Effect of the invention〕

As explained above, the present invention greatly increases the number of wafers processed per unit time by multi-layering the electrodes on which semiconductor substrates are placed and the electrodes applying high-frequency power.
As processing capacity improves, product costs can be reduced. In addition, since the structure of the device is simple and the operation of each part is simple, the attachment and detachment of semiconductor substrates, the movement of electrodes, and the opening and closing of shutters can be automated, making it easier to implement FA (factory automation) by introducing robots, etc. There are effects such as

[Brief explanation of the drawing]

FIG. 1(a) is a plan view showing the first embodiment of the present invention, FIG. 1(b) is an enlarged view of the electrode portion, FIG. 1(c) is a perspective view of the electrode portion, and FIG. A plan view showing a second embodiment of the present invention, FIG. 3(a) is a sectional view of the electrode part of a plasma vapor phase growth apparatus having a conventional parallel plate type electrode, and FIG. 3(b) is a plan view of the same. It is.

Claims (1)

[Claims] (1) A first electrode for installing a semiconductor substrate on which a thin film is to be deposited, a means for introducing and exhausting a gas containing an element for forming a thin film into a vacuum chamber, and applying high frequency power for discharging the gas. a first electrode unit in which a plurality of first electrodes are arranged in a comb-teeth shape with both surfaces of the first electrode being semiconductor substrate installation surfaces; A pair with a second electrode unit in which a plurality of second electrodes paired with the first electrode are arranged in a comb-teeth shape, and each second electrode is arranged alternately so as to face the first electrode. A plasma vapor phase growth device characterized by being equipped with.