JPH0983001A - Integrated thin film solar battery - Google Patents
Integrated thin film solar batteryInfo
- Publication number
- JPH0983001A JPH0983001A JP7236588A JP23658895A JPH0983001A JP H0983001 A JPH0983001 A JP H0983001A JP 7236588 A JP7236588 A JP 7236588A JP 23658895 A JP23658895 A JP 23658895A JP H0983001 A JPH0983001 A JP H0983001A
- Authority
- JP
- Japan
- Prior art keywords
- electrode layer
- unit element
- electrode
- layer
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 47
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000926 separation method Methods 0.000 claims description 22
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 23
- 238000000034 method Methods 0.000 description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 18
- 239000011889 copper foil Substances 0.000 description 17
- 238000000605 extraction Methods 0.000 description 17
- 239000004020 conductor Substances 0.000 description 9
- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- 230000003628 erosive effect Effects 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 239000011521 glass Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- -1 Al and Ag Chemical class 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000013077 scoring method Methods 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は基板上に形成される
薄膜太陽電池の取り出し電極構造に関し、取り出し電極
部の面積が小さくできるとともにその寸法精度も向上
し、さらにはコスト上の問題をも解決することで、安価
でかつ高出力の集積化薄膜太陽電池を提供することがで
きる技術に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead-out electrode structure for a thin-film solar cell formed on a substrate. The lead-out electrode portion can have a small area, its dimensional accuracy can be improved, and the cost problem can be solved. By doing so, the present invention relates to a technology capable of providing an inexpensive and high-power integrated thin-film solar cell.
【０００２】[0002]
【従来の技術】アモルファスシリコン等の薄膜太陽電池
は、基板上に薄膜半導体層を含む単位素子を直列接続し
て形成した集積化構造が一般的に取られている。図４
は、このような従来の集積化薄膜太陽電池４０の断面構
造を示している。図のように、ガラス等の透光性基板３
上に、分割された第一電極層５、第一電極層５側からｐ
−ｉ−ｎ型の各半導体層が順次積層された薄膜半導体層
１１、第二電極層１５が順次積層されて単位素子１７が
構成され、互いに隣設する単位素子１７の第一電極層５
と第二電極層１５とが電気的に接続されることで、基板
３上で複数個の単位素子１７が直列接続されている。そ
して、この太陽電池４０の出力は直列に接続された両端
部から取り出されるが、図中右側端では、端部側の単位
素子１７の第二電極層１５と電気的に接続された第一電
極層５が延設され、取り出し電極４２が構成されてい
る。ここで、延設部の第一電極層５と端部側の単位素子
１７の第一電極層５との間は溝４４によって分離されて
いる。一方、図中左側端では、端部側の単位素子１７の
第一電極層５がそのまま延設されて取り出し電極４６が
構成されている。そして、両側の取り出し電極４２，４
６に対して、超音波ハンダ２７等によって銅箔等の導体
が出力線２５（バスバー）として取り付けられている。
このような出力線２５を取り付ける目的は、取り出し電
極４２，４６を構成している第一電極層５が通常は導電
性の金属酸化物であるため電気抵抗が高く、太陽電池４
０の最終的な出力に悪影響を及ぼす抵抗成分を軽減する
必要があるからである。これは、屋外設置用として一般
的な図例の集積型薄膜太陽電池４０では、その出力電流
も大きいために不可避の構成要素となっている。2. Description of the Related Art A thin film solar cell such as amorphous silicon generally has an integrated structure in which unit elements including a thin film semiconductor layer are connected in series on a substrate. FIG.
Shows a cross-sectional structure of such a conventional integrated thin-film solar cell 40. As shown in the figure, translucent substrate 3 such as glass
Above the divided first electrode layer 5, from the first electrode layer 5 side p
The thin film semiconductor layer 11 in which the respective i-n type semiconductor layers are sequentially stacked and the second electrode layer 15 are sequentially stacked to form the unit element 17, and the first electrode layer 5 of the unit elements 17 adjacent to each other is formed.
And the second electrode layer 15 are electrically connected to each other, so that the plurality of unit elements 17 are connected in series on the substrate 3. The output of this solar cell 40 is taken out from both ends connected in series, but at the right end in the figure, the first electrode electrically connected to the second electrode layer 15 of the unit element 17 on the end side. The layer 5 is extended to form the extraction electrode 42. Here, the first electrode layer 5 of the extended portion and the first electrode layer 5 of the unit element 17 on the end side are separated by the groove 44. On the other hand, at the left end in the figure, the first electrode layer 5 of the unit element 17 on the end side is extended as it is to form the extraction electrode 46. Then, the extraction electrodes 42, 4 on both sides
6, a conductor such as a copper foil is attached as an output line 25 (bus bar) by ultrasonic solder 27 or the like.
The purpose of attaching such an output line 25 is to increase the electric resistance because the first electrode layer 5 forming the extraction electrodes 42 and 46 is usually a conductive metal oxide, and thus the solar cell 4
This is because it is necessary to reduce the resistance component that adversely affects the final output of 0. This is an unavoidable component in the integrated thin-film solar cell 40 of the general example for outdoor installation because its output current is large.
【０００３】そしてこのような構造は、基板３上に複数
領域の第一電極層５を形成した後、取り出し電極４２，
４６となる部分のみをマスクで被った状態で、薄膜半導
体層１１と第二電極層１５を、プラズマＣＶＤおよびス
パッタリング等によって形成する。In such a structure, after the plurality of regions of the first electrode layer 5 are formed on the substrate 3, the extraction electrodes 42,
The thin film semiconductor layer 11 and the second electrode layer 15 are formed by plasma CVD, sputtering, etc., with only the portion to be 46 covered with a mask.
【０００４】[0004]
【発明が解決しようとする課題】一方、このような集積
化薄膜太陽電池４０は、当然ながら基板一枚当たりの出
力を少しでも高くする必要があり、基板３の大きさに対
して、発電に寄与しない領域の割合を少しでも小さくし
なければならない。従って、上記の取り出し電極部４
２，４６は説明するまでもなく発電に寄与しない領域で
あり、この取り出し電極部４２，４６の面積は極力小さ
くしたいところである。また前述のように、取り出し電
極部４２，４６の形成には、薄膜半導体層１１の形成時
に当該部分に成膜されないよう、マスクで被うという方
法が一般に取られている。ところが、マスクで被って成
膜すると、一般にマスク近傍において膜厚が薄くなると
いう現象が見られる。例えば図例の構造においては、取
り出し電極部４２，４６に隣設する２つの単位素子１７
の端部の薄膜半導体層１１の膜厚が、極端に薄くなって
しまう。そうすると、当該２つの単位素子１７において
第一電極層５と第二電極層１５との間が短絡してしま
い、この分の電圧が得られなくなり、結果として集積化
太陽電池全体の出力低下を来してしまう。従って、通常
は当該２つの単位素子１７の薄膜半導体層１１の膜厚に
影響を及ぼさない程度に、取り出し電極部４２，４６の
幅を比較的広く確保するという方法が取られているた
め、基板一枚当たりの発電に寄与する領域の割合が低下
してしまい、集積化薄膜太陽電池の出力向上のネックと
なっている。ここで、薄膜半導体層１１の膜厚に影響を
及ぼさないような取り出し電極部４２，４６の幅は、経
験則から約３〜５ｍｍ程度である。On the other hand, in such an integrated thin film solar cell 40, of course, it is necessary to increase the output per substrate as much as possible. The proportion of the non-contribution area must be reduced as much as possible. Therefore, the extraction electrode portion 4 described above
Needless to say, 2 and 46 are regions that do not contribute to power generation, and the areas of the extraction electrode portions 42 and 46 are desired to be as small as possible. Further, as described above, in forming the extraction electrode portions 42 and 46, a method of covering with a mask so that the thin film semiconductor layer 11 is not formed on the portions is generally taken. However, when a film is formed by covering with a mask, a phenomenon that the film thickness becomes thin in the vicinity of the mask is generally seen. For example, in the structure of the illustrated example, two unit elements 17 adjacent to the extraction electrode portions 42 and 46 are provided.
The film thickness of the thin-film semiconductor layer 11 at the end of is extremely thin. Then, in the two unit elements 17, a short circuit occurs between the first electrode layer 5 and the second electrode layer 15, and a voltage corresponding to this is not obtained, resulting in a decrease in the output of the entire integrated solar cell. Resulting in. Therefore, a method is generally adopted in which the widths of the extraction electrode portions 42 and 46 are relatively wide so that the thicknesses of the thin film semiconductor layers 11 of the two unit elements 17 are not affected. The ratio of the region that contributes to power generation per sheet is reduced, which is a bottleneck in improving the output of the integrated thin-film solar cell. Here, the width of the extraction electrode portions 42 and 46 that does not affect the film thickness of the thin film semiconductor layer 11 is about 3 to 5 mm based on an empirical rule.
【０００５】またこのような状況を考慮してマスクの寸
法を設計しても、成膜時にマスクがずれたりするため、
寸法精度が得られないという問題もある。Even if the dimensions of the mask are designed in consideration of such a situation, the mask is displaced during film formation.
There is also a problem that dimensional accuracy cannot be obtained.
【０００６】さらに、このようなマスクの問題を避ける
ための方法としては、マスクを用いずに全面に薄膜半導
体層１１と第二電極層１５を形成し、最後にエッチング
によってこの両者を除去する方法も考えられる。しかし
ながらエッチングの場合は、基板３が大型化した場合に
装置のコストが嵩むばかりでなく、エッチング液の廃液
処理やエッチング後の洗浄などにも設備コストがかかる
という問題がある。Further, as a method for avoiding the problem of such a mask, a method of forming the thin film semiconductor layer 11 and the second electrode layer 15 on the entire surface without using a mask and finally removing both of them by etching. Can also be considered. However, in the case of etching, there is a problem that not only the cost of the apparatus increases when the size of the substrate 3 becomes large, but also facility costs are required for waste liquid treatment of the etching liquid and cleaning after etching.
【０００７】[0007]
【課題を解決するための手段】本発明は上記の問題点を
解決し、基板上に形成される集積化薄膜太陽電池の取り
出し電極部の面積が小さくできるとともにその寸法精度
も向上し、さらにはコスト上の問題をも解決し、安価で
かつ高出力の集積化薄膜太陽電池を提供するものであ
る。前述のような課題は、基板上に複数の領域に分割し
て設けられた第一電極層の上面側に、二つの第一電極層
にわたって一方の第一電極層上に開口した接続用開溝部
を設けた半導体層が設けられ、この半導体層の上面側に
は接続用開溝部を介して一方の第一電極層と電気的に接
続した状態で第二電極層が設けられることにより、第二
電極層と他方の第一電極層に挟まれた領域よりなる単位
素子が構成されるとともに、この単位素子が一方向に複
数個直列に接続され、一方の接続終端部にあっては、終
端部側の単位素子の第二電極層と電気的に接続されかつ
終端部側の単位素子の第一電極層と絶縁された第一電極
層が延設されるとともに、この第一電極層の延設部上に
は単位素子から連続した半導体層と第二電極層とを含む
積層帯部が設けられ、他方の接続終端部にあっては終端
部側の単位素子の第一電極層が延設されるとともに、こ
の第一電極層の延設部上には終端部側の単位素子との間
の分離溝を隔てて半導体層と第二電極層とを含む積層帯
部が設けられ、両接続終端部の積層帯部に、第一電極層
の延設部の表面に達する導通溝が積層帯部の長手方向に
形成された集積化薄膜太陽電池とすることで解決でき
る。SUMMARY OF THE INVENTION The present invention solves the above problems, and can reduce the area of the extraction electrode portion of an integrated thin-film solar cell formed on a substrate and improve its dimensional accuracy. It is an object of the present invention to provide an inexpensive and high-power integrated thin-film solar cell that solves the cost problem. The above-mentioned problem is caused by the connection open groove opened on one of the first electrode layers over the two first electrode layers on the upper surface side of the first electrode layer provided on the substrate in a plurality of areas. A semiconductor layer having a portion is provided, and the second electrode layer is provided on the upper surface side of the semiconductor layer in a state of being electrically connected to one of the first electrode layers via a connection opening portion, A unit element composed of a region sandwiched between the second electrode layer and the other first electrode layer is formed, and a plurality of the unit elements are connected in series in one direction, and at one connection terminal end, A first electrode layer electrically connected to the second electrode layer of the unit element on the terminal end side and insulated from the first electrode layer of the unit element on the terminal end side is provided, and the first electrode layer A laminated strip portion including a semiconductor layer continuous from the unit element and a second electrode layer is provided on the extended portion, On the other hand, the first electrode layer of the unit element on the terminal end side is extended in the connection end portion on one side, and the separation from the unit element on the terminal end side is provided on the extended portion of the first electrode layer. A laminated strip portion including a semiconductor layer and a second electrode layer is provided by separating the groove, and a conductive groove reaching the surface of the extended portion of the first electrode layer is formed in the laminated strip portion of both connection terminal portions. This can be solved by using an integrated thin film solar cell formed in the longitudinal direction.
【０００８】また、基板上に複数の領域に分割して設け
られた第一電極層の上面側に、二つの第一電極層にわた
って一方の第一電極層上に開口した接続用開溝部を設け
た半導体層が設けられ、この半導体層の上面側には接続
用開溝部を介して一方の第一電極層と電気的に接続した
状態で第二電極層が設けられることにより、第二電極層
と他方の第一電極層に挟まれた領域よりなる単位素子が
構成されるとともに、この単位素子が一方向に複数個直
列に接続され、一方の接続終端部にあっては、終端部側
の単位素子の第二電極層と電気的に接続されかつ終端部
側の単位素子の第一電極層と絶縁された第一電極層が延
設されるとともに、この第一電極層の延設部上には終端
部側の単位素子との間の分離溝を隔てて半導体層と第二
電極層とを含む積層帯部が設けられ、他方の接続終端部
にあっては終端部側の単位素子の第一電極層が延設され
るとともに、この第一電極層の延設部上には終端部側の
単位素子との間の分離溝を隔てて半導体層と第二電極層
とを含む積層帯部が設けられ、両接続終端部の積層帯部
に、第一電極層の延設部の表面に達する導通溝が積層帯
部の長手方向に形成された集積化薄膜太陽電池としても
よい。In addition, on the upper surface side of the first electrode layer which is provided on the substrate in a plurality of divided areas, there is formed a connecting groove portion which is open on one of the first electrode layers over the two first electrode layers. The semiconductor layer provided is provided, and the second electrode layer is provided on the upper surface side of the semiconductor layer in a state of being electrically connected to one of the first electrode layers through the connection opening portion, A unit element composed of a region sandwiched between an electrode layer and the other first electrode layer is formed, and a plurality of the unit elements are connected in series in one direction. The first electrode layer electrically connected to the second electrode layer of the unit element on the side and insulated from the first electrode layer of the unit element on the end portion side, and the extension of the first electrode layer. A part including a semiconductor layer and a second electrode layer separated from each other by a separation groove between the unit element on the terminal side. A band portion is provided, and at the other connection terminal end, the first electrode layer of the unit element on the terminal end side is extended, and the unit on the terminal end side is provided on the extended portion of the first electrode layer. A laminated band portion including a semiconductor layer and a second electrode layer is provided with a separation groove between the element and the conductive layer reaching the surface of the extended portion of the first electrode layer at the laminated band portions of both connection terminal portions. An integrated thin film solar cell in which a groove is formed in the longitudinal direction of the laminated strip may be used.
【０００９】さらには、基板上に複数の領域に分割して
設けられた第一電極層の上面側に、二つの第一電極層に
わたって一方の第一電極層上に開口した接続用開溝部を
設けた半導体層が設けられ、この半導体層の上面側には
接続用開溝部を介して一方の第一電極層と電気的に接続
した状態で第二電極層が設けられることにより、第二電
極層と他方の第一電極層に挟まれた領域よりなる単位素
子が構成されるとともに、この単位素子が一方向に複数
個直列に接続され、一方の接続終端部にあっては、終端
部側の単位素子の第二電極層と電気的に接続されかつ終
端部側の単位素子の第一電極層と絶縁された第一電極層
が延設されるとともに、この第一電極層の延設部上には
終端部側の単位素子との間の分離溝を隔てて半導体層と
第二電極層とを含む積層帯部が、第一電極層の延設部上
に設けられた半導体層の開口溝を介して第二電極層と第
一電極層の延設部との間が電気的に接続された状態で設
けられ、他方の接続終端部にあっては終端部側の単位素
子の第一電極層が延設されるとともに、この第一電極層
の延設部上には終端部側の単位素子との間の分離溝を隔
てて半導体層と第二電極層とを含む積層帯部が設けら
れ、両接続終端部の積層帯部に、第一電極層の延設部の
表面に達する導通溝が積層帯部の長手方向に形成された
集積化薄膜太陽電池としてもよい。Further, on the upper surface side of the first electrode layer provided on the substrate divided into a plurality of regions, a connection open groove portion which is opened on one of the first electrode layers over the two first electrode layers is formed. Is provided, and the second electrode layer is provided on the upper surface side of the semiconductor layer in a state of being electrically connected to one of the first electrode layers through the opening groove for connection. A unit element composed of a region sandwiched between the two-electrode layer and the other first electrode layer is formed, and a plurality of the unit elements are connected in series in one direction. The first electrode layer electrically connected to the second electrode layer of the unit element on the terminal side and insulated from the first electrode layer of the unit element on the terminal side, and the extension of the first electrode layer. A semiconductor layer and a second electrode layer are included on the installation portion with a separation groove between the unit element on the terminal end side separated. A state in which the laminated strip portion is electrically connected between the second electrode layer and the extended portion of the first electrode layer through the opening groove of the semiconductor layer provided on the extended portion of the first electrode layer. In the other connection terminal end, the first electrode layer of the unit element on the terminal end side is extended, and the unit element on the terminal end side is provided on the extended portion of the first electrode layer. A laminated band portion including a semiconductor layer and a second electrode layer is provided with a separation groove between the conductive layer and a conductive groove reaching the surface of the extended portion of the first electrode layer in the laminated band portions of both connection terminal portions. An integrated thin-film solar cell formed in the longitudinal direction of the laminated strip may be used.
【００１０】ここで、両積層帯部の基板端面側の適所
に、基板の外周に沿って少なくとも第二電極層が除去さ
れた絶縁代が形成された構成を組み合わせてもよい。Here, it is also possible to combine a structure in which an insulation allowance in which at least the second electrode layer is removed is formed along the outer periphery of the substrate at appropriate positions on the substrate end surface side of both laminated strip portions.
【００１１】[0011]
【発明の実施の形態】本発明の集積化薄膜太陽電池は、
以下のような工程によって形成される。 先ずガラス等の透光性基板の上に、酸化錫（以下Ｓｎ
Ｏ2 と記す）や酸化インジウム錫（以下ＩＴＯと記す）
あるいは酸化亜鉛（以下ＺｎＯと記す）等の透明導電性
を有する金属酸化物により、基板の一方向に延びた複数
個の短冊状の第一電極層を、隣設し合う領域間の分離帯
によって隔てられた状態で基板のほぼ全面にわたって形
成する。これには、一旦絶縁性透明基板上全面に金属酸
化物層を被着した後、レーザースクライブによって分離
帯部分を溶断除去する方法が採用される。 続いてこの第一電極層上に、ｐ型の水素化非晶質炭化
シリコン（以下ｐ型のａ−ＳｉＣ：Ｈと記す）、ｉ型の
水素化非晶質シリコン（以下ｉ型のａ−Ｓｉ：Ｈと記
す）、ｎ型の水素化非晶質シリコン（以下ｎ型のａ−Ｓ
ｉ：Ｈと記す）の３層を順次堆積して半導体層を形成す
る。 その後、レーザースクライブ法によって半導体層の一
部を除去して接続用開溝部を設ける。この段階におい
て、一つの半導体層領域は二つの第一電極層にわたって
形成された構造となる。 続いてこの複数の半導体層領域の上に、アルミニウム
（Ａｌ）や銀（Ａｇ）などの金属材料からなる第二電極
層を形成する。 そして、前記の接続用開溝部に沿ってレーザースクラ
イブ法により、少なくとも第二電極層の一部を除去した
分割溝を形成する。BEST MODE FOR CARRYING OUT THE INVENTION The integrated thin film solar cell of the present invention is
It is formed by the following steps. First, tin oxide (hereinafter Sn) is formed on a transparent substrate such as glass.
O 2 ) and indium tin oxide (hereinafter referred to as ITO)
Alternatively, a plurality of strip-shaped first electrode layers extending in one direction of the substrate are formed by a metal oxide having a transparent conductivity such as zinc oxide (hereinafter referred to as ZnO) by a separation band between adjacent regions. Formed over almost the entire surface of the substrate in a separated state. For this, a method is used in which a metal oxide layer is once deposited on the entire surface of an insulating transparent substrate, and then the separation band portion is fused and removed by laser scribing. Then, on the first electrode layer, p-type hydrogenated amorphous silicon carbide (hereinafter referred to as p-type a-SiC: H) and i-type hydrogenated amorphous silicon (hereinafter referred to as i-type a- Si: H), n-type hydrogenated amorphous silicon (hereinafter n-type aS
i: H) is sequentially deposited to form a semiconductor layer. After that, a part of the semiconductor layer is removed by a laser scribing method to provide an opening for connection. At this stage, one semiconductor layer region has a structure formed over two first electrode layers. Then, a second electrode layer made of a metal material such as aluminum (Al) or silver (Ag) is formed on the plurality of semiconductor layer regions. Then, a dividing groove is formed along the connection opening portion by a laser scribing method in which at least a part of the second electrode layer is removed.
【００１２】ここで、請求項１〜３の集積化薄膜太陽電
池における他方の接続終端部に形成される分離溝は、前
記工程と同時に形成される。また、請求項１〜３の集
積化薄膜太陽電池における積層帯部に形成される導通溝
も、前記工程と同時に形成され、この導通溝の底部に
は、第一電極層が露出している状態となる。さらに、請
求項２および３の集積化薄膜太陽電池における一方の接
続終端に形成される分離溝も、前記工程と同時に形成
される。一方、請求項３の集積型薄膜太陽電池における
一方の接続終端に形成される開口溝については、前記工
程と同時に形成される。なおこのような分離溝、導通
溝、開口溝も、レーザースクライブによって形成され
る。Here, the isolation groove formed in the other connection terminal end of the integrated thin-film solar cell according to claims 1 to 3 is formed at the same time as the above step. Further, the conductive groove formed in the laminated band portion of the integrated thin-film solar cell according to claim 1 is also formed at the same time as the step, and the first electrode layer is exposed at the bottom of the conductive groove. Becomes Further, the separation groove formed at one connection end in the integrated thin film solar cell of claims 2 and 3 is also formed at the same time as the above step. On the other hand, the opening groove formed at one connection terminal in the integrated thin-film solar cell of claim 3 is formed at the same time as the above step. Incidentally, such separation groove, conduction groove, and opening groove are also formed by laser scribing.
【００１３】続いて、導通溝が形成された部分の上
に、超音波ハンダ等の接合材や導電性樹脂等の接着材に
よってハンダメッキ銅箔等の導電体が取り付けられるこ
とで、第一電極層と導電体との間の電気的接続が取られ
て、これら導電体が取り出し電極となる。取り出し電極
を設けた太陽電池としてはこの状態で完成であるが、必
要に応じてパシベーション樹脂等が塗布されたり、基板
周囲に枠部材が取り付けられる。Subsequently, a conductor such as a solder-plated copper foil is attached to the portion where the conductive groove is formed by a bonding material such as ultrasonic solder or an adhesive such as a conductive resin, so that the first electrode is attached. Electrical connections are made between the layers and the conductors, and these conductors become the take-out electrodes. Although the solar cell provided with the extraction electrode is completed in this state, a passivation resin or the like is applied or a frame member is attached around the substrate, if necessary.
【００１４】[0014]
【実施例】次に本発明の太陽電池構造を、具体的実施例
に基づいて説明する。図１は、請求項１に記載の集積化
薄膜太陽電池１ａの断面構造例を表している。ガラス基
板３上には、基板３の一方向に延びたＳｎＯ2 による複
数個の短冊状の第一電極層５が、隣設し合う領域間の分
離帯７によって隔てられた状態で基板３のほぼ全面にわ
たって形成されている。これには、先ず基板３全面にＳ
ｎＯ2 を堆積した後に、レーザースクライブによって分
離帯７の部分を溶断して形成される。そして第一電極層
５の上面側には、二つの第一電極層５にわたって、一方
の第一電極層５上に開口した接続用開溝部９を設けた半
導体層１１が設けられている。この半導体層１１は、例
えば第一電極層５側から、膜厚１５０Åのｐ型ａ−Ｓｉ
Ｃ：Ｈ１１ｐ、同３２００Åのｉ型ａ−Ｓｉ：Ｈ１１
ｉ、同３００Åのｎ型ａ−Ｓｉ：Ｈ１１ｎの３つの層
が、プラズマＣＶＤ法によって順次形成されたものであ
り、接続用開溝部９については、レーザースクライブ法
によって半導体層１１を部分的に溶断することで形成さ
れる。そして、この半導体層１１の上面側には、接続用
開溝部９を介して一方の第一電極層５と電気的に接続し
た状態で、分割溝１３によって複数領域に分離された第
二電極層１５が設けられることにより、第二電極層１５
と他方の第一電極層５に挟まれた領域よりなる単位素子
１７が構成される。ここでも、分割溝１３の形成にはレ
ーザースクライブ法が用いられる。このようにして、複
数個の単位素子１７が一方向に直列に接続された構造と
なる。EXAMPLES Next, the solar cell structure of the present invention will be described based on specific examples. FIG. 1 shows an example of a sectional structure of an integrated thin-film solar cell 1a according to claim 1. On the glass substrate 3, a plurality of strip-shaped first electrode layers 5 made of SnO 2 extending in one direction of the substrate 3 are separated from each other by a separation band 7 between adjacent regions. It is formed over almost the entire surface. To do this, first make S on the entire surface of the substrate 3.
After depositing nO 2 , the portion of the separation band 7 is melted and cut by laser scribing. Then, on the upper surface side of the first electrode layer 5, a semiconductor layer 11 having a connection open groove portion 9 opened on one of the first electrode layers 5 is provided across the two first electrode layers 5. The semiconductor layer 11 is, for example, a p-type a-Si film having a film thickness of 150Å from the first electrode layer 5 side.
C: H11p, i-type a-Si: H11 of 3200Å
i, three layers of n-type a-Si: H11n of 300 Å are sequentially formed by the plasma CVD method, and the connection groove 9 is formed by partially slicing the semiconductor layer 11 by the laser scribing method. It is formed by fusing. Then, on the upper surface side of the semiconductor layer 11, the second electrode divided into a plurality of regions by the dividing groove 13 in a state of being electrically connected to the first electrode layer 5 on one side through the opening 9 for connection. By providing the layer 15, the second electrode layer 15
And a unit element 17 composed of a region sandwiched by the other first electrode layer 5. Also in this case, the laser scribing method is used to form the dividing grooves 13. In this way, a plurality of unit elements 17 are connected in series in one direction.
【００１５】次に、図の右側に相当する一方の接続終端
部にあっては、終端部側の単位素子１７の第二電極層１
５と電気的に接続され、かつこの単位素子１７の第一電
極層５と絶縁された第一電極層５が延設されている。こ
こで第一電極層５と第二電極層１５との電気的接続は、
半導体層１１に形成された接続用開溝部９によって取ら
れている。そして、この第一電極層５の延設部１９上に
は単位素子１７から連続した半導体層１１と第二電極層
１５とを含む積層帯部２１が設けられており、第一電極
層５の延設部１９の表面に達する導通溝２３が積層帯部
２１の長手方向に形成され、この導通溝２３を介してハ
ンダメッキ銅箔２５と延設された第一電極層５とが、超
音波ハンダ２７によって電気的に接続されている。この
導通溝２３は、レーザースクライブ法によって形成され
る。Next, in one of the connection terminal end portions corresponding to the right side of the drawing, the second electrode layer 1 of the unit element 17 on the terminal end portion side.
5, the first electrode layer 5 electrically connected to the unit element 17 and insulated from the first electrode layer 5 of the unit element 17 is provided. Here, the electrical connection between the first electrode layer 5 and the second electrode layer 15 is
It is taken by the connection trench 9 formed in the semiconductor layer 11. On the extended portion 19 of the first electrode layer 5, a laminated strip portion 21 including the semiconductor layer 11 and the second electrode layer 15 continuous from the unit element 17 is provided, and the laminated strip portion 21 of the first electrode layer 5 is provided. A conductive groove 23 reaching the surface of the extended portion 19 is formed in the longitudinal direction of the laminated strip portion 21, and the solder-plated copper foil 25 and the extended first electrode layer 5 are ultrasonically bonded via the conductive groove 23. It is electrically connected by the solder 27. The conduction groove 23 is formed by a laser scribing method.
【００１６】一方、図の左側に相当する他方の接続終端
部にあっても、終端部側の単位素子１７の第一電極層５
が延設されるとともに、この第一電極層５の延設部１９
上には終端部側の単位素子１７との間の分離溝２９ａを
隔てて半導体層１１と第二電極層１５とを含む積層帯部
２１が設けられている。なおこの分離溝２９ａは、上記
分割溝１３を形成する際に同時に形成される。そして、
積層帯部２１の長手方向に第一電極層５の延設部１９の
表面に達する導通溝２３が形成され、この導通溝２３を
介してハンダメッキ銅箔２５と延設された第一電極層５
とが、超音波ハンダ２７によって電気的に接続されてい
る。こちら側の導通溝２３も、レーザースクライブ法に
よって形成される。On the other hand, even in the other connection terminal end corresponding to the left side of the drawing, the first electrode layer 5 of the unit element 17 on the terminal end side is formed.
And the extended portion 19 of the first electrode layer 5
A laminated band portion 21 including the semiconductor layer 11 and the second electrode layer 15 is provided on the upper side of the isolation groove 29a between the unit element 17 on the terminal side. The separation groove 29a is formed at the same time when the division groove 13 is formed. And
A conductive groove 23 reaching the surface of the extended portion 19 of the first electrode layer 5 is formed in the longitudinal direction of the laminated strip portion 21, and the solder plated copper foil 25 and the first electrode layer extended through the conductive groove 23. 5
And are electrically connected by ultrasonic solder 27. The conduction groove 23 on this side is also formed by the laser scribing method.
【００１７】このように、導通溝２３はレーザースクラ
イブによって形成されるので、その幅は最大でも１００
μｍ程度である。また、ハンダメッキ銅箔２５との接続
抵抗を低減するためには、導通溝２３は複数本形成する
ことが望ましいが、仮に５本の導通溝２３を形成したと
しても、積層帯部２１の幅としては、約１ｍｍ程度かそ
れ以下となり、従来のマスクを使用した場合に比べて大
幅に狭くできる。As described above, since the conductive groove 23 is formed by laser scribing, its width is 100 at the maximum.
It is about μm. Further, in order to reduce the connection resistance with the solder-plated copper foil 25, it is desirable to form a plurality of conduction grooves 23. However, even if five conduction grooves 23 are formed, the width of the laminated strip portion 21 is reduced. As a result, it becomes about 1 mm or less, which can be significantly narrowed compared to the case where a conventional mask is used.
【００１８】本例は半導体層１１として、非晶質シリコ
ンを用いた例であるが、この他の薄膜半導体としては、
銅／インジウム／セレン、硫化カドミウム、薄膜多結晶
シリコンなどが例示でき、第二電極層１５としては、前
記のＡｌやＡｇのような金属や、ＳｎＯ2 等の前述の金
属酸化物材料、およびそれらの積層体などが例示でき
る。また上記実施例は、基板３側から光が入射するタイ
プのものであるが、これとは逆に、第二電極層１５側か
ら光が入射するタイプでも可能である。そしてこの場合
には、第二電極層１５にＳｎＯ2 等の透明導電性材料を
使用すること、および基板３に透光性を有しないものが
使用できることは、言うまでもない。This example is an example in which amorphous silicon is used as the semiconductor layer 11, but other thin film semiconductors include:
Examples of the material include copper / indium / selenium, cadmium sulfide, and thin film polycrystalline silicon. As the second electrode layer 15, the above-mentioned metals such as Al and Ag, the above-mentioned metal oxide materials such as SnO 2 and the like. And the like. Further, although the above-mentioned embodiment is of a type in which light is incident from the substrate 3 side, conversely, it is also possible to be of a type in which light is incident from the second electrode layer 15 side. In this case, needless to say, the second electrode layer 15 can be made of a transparent conductive material such as SnO 2 and the substrate 3 can be made of a material having no light-transmitting property.
【００１９】このような図１の構造は、図４で示した従
来の構造のものと異なり、マスクを用いる必要が無いた
め、取り出し電極部、すなわち銅箔２５が取り付けられ
る部分の幅を極小化できることから、基板一枚当たりの
発電に寄与する有効受光部が大きくなり、出力の増大化
が図れる。またレーザースクライブの精度は、本発明に
おいて使用した装置では１０μｍ程度の再現性を有して
おり、これによって形成された位置精度の高い導通溝２
３を、位置合わせ参照部としてハンダ付けをすることに
より、高精度の配線が可能となった。Unlike the conventional structure shown in FIG. 4, the structure shown in FIG. 1 does not require a mask. Therefore, the width of the extraction electrode portion, that is, the portion to which the copper foil 25 is attached is minimized. As a result, the effective light receiving portion that contributes to the power generation per substrate becomes large, and the output can be increased. The precision of laser scribing is about 10 μm in the apparatus used in the present invention, and the conductive groove 2 formed by this has a high positional precision.
By soldering 3 as an alignment reference portion, highly accurate wiring was possible.
【００２０】しかしながら、このような図１の構造で
は、超音波ハンダ２７によってハンダメッキ銅箔２５を
取り付ける際に、第二電極層１５とハンダとが必要以上
に合金化するというハンダ食われが発生し、これが横方
向に広がって単位素子領域の第二電極層１５をも浸食す
る場合が稀に発生する。そしてこれを防止するため、請
求項２の発明が提案される。However, in such a structure of FIG. 1, when the solder-plated copper foil 25 is attached by the ultrasonic solder 27, solder erosion occurs in which the second electrode layer 15 and the solder are excessively alloyed. However, this rarely occurs when it spreads laterally and also erodes the second electrode layer 15 in the unit element region. In order to prevent this, the invention of claim 2 is proposed.
【００２１】この請求項２に記載の集積化薄膜太陽電池
１ｂの断面構造例を、図２に表している。図例におい
て、第二電極層１５と第一電極層５に挟まれた領域より
なる単位素子１７が一方向に複数個直列に接続された構
造、および図中左端部の積層帯部２１の構造は、それぞ
れ前述の図１に示したものと同一であるが、図中右端部
の積層帯部２１の構造が異なっている。すなわち図示す
るように、直列接続の終端部側の単位素子１７の第二電
極層１５と電気的に接続され、かつこの単位素子１７の
第一電極層５と絶縁された第一電極層５が延設されると
ともに、これに加えて、この第一電極層５の延設部１９
上に、終端部側の単位素子１７との間の分離溝２９ｂを
隔てて半導体層１１と第二電極層１５とを含む積層帯部
２１が設けられている点で異なっている。そして第一電
極層５の延設部１９の表面に達する導通溝２３が積層帯
部２１の長手方向に形成され、この導通溝２３を介して
ハンダメッキ銅箔２５と延設された第一電極層５とが、
超音波ハンダ２７によって電気的に接続されている。こ
の導通溝２３も、図１のものと同様にレーザースクライ
ブ法によって形成される。このような構造においては、
超音波ハンダ２７によってハンダメッキ銅箔２５を取り
付ける際に、第二電極層１５とハンダとが必要以上に合
金化するハンダ食われが発生してこれが横方向に広がっ
ても、分離溝２９ｂがあるために隣設する単位素子１７
領域の第二電極層１５が、ハンダ食われによって浸食さ
れてしまうことが無くなる。FIG. 2 shows an example of a sectional structure of the integrated thin film solar cell 1b according to the second aspect. In the figure, a structure in which a plurality of unit elements 17 each composed of a region sandwiched between the second electrode layer 15 and the first electrode layer 5 are connected in series in one direction, and a structure of a laminated strip portion 21 at the left end in the figure Are the same as those shown in FIG. 1, respectively, but the structure of the laminated band portion 21 at the right end in the drawing is different. That is, as shown in the figure, the first electrode layer 5 electrically connected to the second electrode layer 15 of the unit element 17 on the terminal end side of the series connection and insulated from the first electrode layer 5 of the unit element 17 is formed. In addition to being extended, the extended portion 19 of the first electrode layer 5 is additionally provided.
The difference is that a laminated band portion 21 including the semiconductor layer 11 and the second electrode layer 15 is provided above the isolation groove 29b between the unit element 17 on the terminal end side. A conductive groove 23 reaching the surface of the extended portion 19 of the first electrode layer 5 is formed in the longitudinal direction of the laminated strip portion 21, and the first electrode extended with the solder-plated copper foil 25 through the conductive groove 23. Layer 5 is
It is electrically connected by ultrasonic solder 27. The conductive groove 23 is also formed by the laser scribing method as in the case of FIG. In such a structure,
When the solder-plated copper foil 25 is attached by the ultrasonic solder 27, the second electrode layer 15 and the solder are excessively alloyed, and even if solder erosion occurs and spreads in the lateral direction, the separation groove 29b exists. A unit element 17 adjacent to the
The second electrode layer 15 in the region is not eroded by the solder erosion.
【００２２】しかしながらこのような図２の構造は、ハ
ンダ食われが防止できる点で確かに品質の向上が図れる
という大きな効果が得られるが、導通溝２３が前述のよ
うに細いためにプローブを直接第一電極層５に当てるこ
とが困難であり、ハンダメッキ銅箔２５を取り付ける前
の状態で、太陽電池特性が測定できないという点が、工
程設計上の問題となる場合がある。そしてこれを改善す
るため、請求項３の発明が提案される。However, the structure shown in FIG. 2 has a great effect that the quality of the solder can be improved in that solder erosion can be prevented. However, since the conductive groove 23 is thin as described above, the probe is directly connected. It may be difficult to apply it to the first electrode layer 5, and the solar cell characteristics may not be measured before the solder-plated copper foil 25 is attached, which may be a problem in process design. In order to improve this, the invention of claim 3 is proposed.
【００２３】この請求項３に記載の集積化薄膜太陽電池
１ｃの断面構造例を、図３に表している。図例におい
て、第二電極層１５と第一電極層５に挟まれた領域より
なる単位素子１７が一方向に複数個直列に接続された構
造および、図中左端部の積層帯部２１の構造は、前述の
図１、図２に示したものと同一であるが、図中右端部の
積層帯部２１の構造が異なっている。すなわち図示する
ように、本例の当該積層帯部２１は、終端部側の単位素
子１７の第二電極層１５と電気的に接続され、かつこの
単位素子１７の第一電極層５と絶縁されて延設された第
一電極層５の延設部１９上に、終端部側の単位素子１７
との間の分離溝２９ｂを隔てて構成されるとともに、第
一電極層５の延設部１９上に設けられた半導体層１１の
開口溝３１を介して積層帯部２１の第二電極層１５と第
一電極層５の延設部１９との間が電気的に接続された状
態に形成されている点で異なっている。従って、後述す
るハンダメッキ銅箔２５を取り付ける工程の前であって
も、太陽電池の電気特性を測定することができる。そし
て前述の例と同様に、第一電極層５の延設部１９の表面
に達する導通溝２３が積層帯部２１の長手方向に形成さ
れ、この導通溝２３を介してハンダメッキ銅箔２５と延
設された第一電極層５とが、超音波ハンダ２７によって
電気的に接続されている。この導通溝２３も、図１、図
２のものと同様にレーザースクライブ法によって形成さ
れる。このような構造においては、図２の構造における
ハンダ食われ防止という効果に加え、ハンダメッキ銅箔
２５を取り付ける前、すなわち太陽電池素子工程が終了
した時点で、積層帯部２１の第二電極層１５にプローブ
を当てることにより、その電気特性を測定することがで
きる。これは、集積化薄膜太陽電池の製造工程にあっ
て、ハンダの食われ現象を防止しながら最終のアセンブ
ル工程に不良品が流れないようにできるため、良品率や
品質の向上とともに、工程上の無駄の排除にも寄与する
という大きな効果につながる。An example of a sectional structure of the integrated thin-film solar cell 1c according to claim 3 is shown in FIG. In the illustrated example, a structure in which a plurality of unit elements 17 each composed of a region sandwiched between the second electrode layer 15 and the first electrode layer 5 are connected in series in one direction, and a structure of a laminated band portion 21 at the left end in the drawing Is the same as that shown in FIG. 1 and FIG. 2 described above, but the structure of the laminated band portion 21 at the right end in the figure is different. That is, as shown in the drawing, the laminated strip portion 21 of the present example is electrically connected to the second electrode layer 15 of the unit element 17 on the terminal end side and is insulated from the first electrode layer 5 of the unit element 17. On the extending portion 19 of the first electrode layer 5 that is extended by the
And the second electrode layer 15 of the laminated band portion 21 via the opening groove 31 of the semiconductor layer 11 provided on the extended portion 19 of the first electrode layer 5 while being separated from each other by the separation groove 29b. And the extended portion 19 of the first electrode layer 5 are electrically connected to each other. Therefore, the electrical characteristics of the solar cell can be measured even before the step of attaching the solder-plated copper foil 25 described later. Then, similarly to the above-mentioned example, the conductive groove 23 reaching the surface of the extended portion 19 of the first electrode layer 5 is formed in the longitudinal direction of the laminated strip portion 21, and the solder-plated copper foil 25 and the solder-plated copper foil 25 are formed through the conductive groove 23. The extended first electrode layer 5 is electrically connected by ultrasonic solder 27. The conductive groove 23 is also formed by the laser scribing method as in the case of FIGS. In such a structure, in addition to the effect of preventing solder erosion in the structure of FIG. 2, before the solder-plated copper foil 25 is attached, that is, at the time when the solar cell element process is completed, the second electrode layer of the laminated band portion 21 is By applying a probe to 15, the electrical characteristics can be measured. This is because in the manufacturing process of integrated thin film solar cells, it is possible to prevent defective products from flowing into the final assembly process while preventing solder erosion. This leads to the great effect of contributing to the elimination of waste.
【００２４】また、以上の図１〜図３に説明した集積化
薄膜太陽電池においては、基板３上に第一電極層５を形
成する際に、ＣＶＤ法やスパッタリング法によってＳｎ
Ｏ2等が先ず基板３の全面に被着され、その後にレーザ
ースクライブ法によって分離帯７が形成される。従っ
て、ＣＶＤによって被着した後には、基板３の全周にわ
たってその端面３３にも、第一電極層５の形成材料であ
るＳｎＯ2 等の金属酸化物が回り込んで被着されてい
る。このような状況において、ハンダメッキ銅箔２５の
ハンダ付け時にハンダが基板３の端面に回り込んでしま
うと、結局は、集積化薄膜太陽電池１ａ〜１ｃの両積層
帯部２１の第一電極層５，５の間、すなわち正極と負極
とが短絡することになる。これを防止するためには、す
でに図１〜図３に示しているが、基板３の端部直近の少
なくとも第二電極層１５、望ましくは第二電極層１５、
半導体層１１、第一電極層５の全てを除去した絶縁代３
３を形成しておくとよい。この除去は、レーザースクラ
イブ法や機械的な罫書き法、その他の公知の方法によっ
て簡便に行うことができる。In the integrated thin film solar cell described in FIGS. 1 to 3 above, when the first electrode layer 5 is formed on the substrate 3, Sn is formed by a CVD method or a sputtering method.
O 2 or the like is first deposited on the entire surface of the substrate 3, and then the separation band 7 is formed by the laser scribing method. Therefore, after being deposited by CVD, a metal oxide such as SnO 2 that is a material for forming the first electrode layer 5 also wraps around the end face 33 of the substrate 3 along the entire circumference thereof. In such a situation, when the solder wraps around the end surface of the substrate 3 during soldering of the solder-plated copper foil 25, the first electrode layers of both the laminated band portions 21 of the integrated thin-film solar cells 1a to 1c will eventually result. Between 5 and 5, that is, the positive electrode and the negative electrode are short-circuited. In order to prevent this, as already shown in FIGS. 1 to 3, at least the second electrode layer 15 near the edge of the substrate 3, preferably the second electrode layer 15,
Insulation allowance 3 in which the semiconductor layer 11 and the first electrode layer 5 are all removed
3 is preferably formed in advance. This removal can be easily performed by a laser scribing method, a mechanical scoring method, or any other known method.
【００２５】[0025]
【発明の効果】以上のように、本発明によればマスクを
使用することなく、レーザースクライブ法によって取り
出し電極部（積層帯部）が形成可能であるため、その寸
法精度が大幅に向上することから、取り出し電極部の幅
を極小化することができる。すなわち、最終的な出力線
となるハンダメッキ銅箔等の導体を取り付ける際の寸法
精度のみを考慮して設計が可能であるため、従来のよう
な大きな誤差を考慮する必要が無くなる。従って、基板
の大きさに対する有効受光部の大きさの割合が増大し、
集積化薄膜太陽電池の出力向上が実現できる。さらに、
従来に比較してマスクの使用やエッチング工程が不要と
なり、製造工程が簡便となり、製造コストの低減にも大
きく寄与できる。また、レーザースクライブによる細い
導通溝を介して導体と第一電極層とが電気的接続を取る
構成でありながら、太陽電池の素子製造工程が終了した
時点、すなわち導体を取り付ける前の段階での出力測定
が可能である。さらに、導体を取り付ける際にハンダ食
われが発生しても単位素子領域にまで広がらないので、
ハンダ食われが発生した場合にはハンダ付け箇所を変更
したり、導電性樹脂による接着に変更したりすることも
可能である。従って、出力特性の向上やコストダウンと
いった前記効果に加え、製造工程において不良を発生さ
せないという大きな効果も得ることができる。As described above, according to the present invention, the extraction electrode portion (laminated band portion) can be formed by the laser scribing method without using a mask, so that the dimensional accuracy thereof is significantly improved. Therefore, the width of the extraction electrode portion can be minimized. That is, since it is possible to design by considering only the dimensional accuracy when mounting a conductor such as a solder-plated copper foil that will be the final output line, it is not necessary to consider a large error as in the conventional case. Therefore, the ratio of the size of the effective light receiving portion to the size of the substrate increases,
It is possible to improve the output of the integrated thin-film solar cell. further,
Compared with the prior art, the use of a mask and the etching process are not required, the manufacturing process is simplified, and the manufacturing cost can be greatly reduced. Further, although the conductor and the first electrode layer are electrically connected to each other through the thin conductive groove formed by laser scribing, the output at the time when the solar cell element manufacturing process is completed, that is, before the conductor is attached. It is possible to measure. Furthermore, even if solder erosion occurs when mounting the conductor, it does not spread to the unit element area,
If solder erosion occurs, it is possible to change the soldering point or change the adhesion to the conductive resin. Therefore, in addition to the above-described effects such as improvement in output characteristics and cost reduction, it is possible to obtain a great effect that defects are not generated in the manufacturing process.
【図１】本発明の集積化薄膜太陽電池の構造例を表す説
明用断面図FIG. 1 is an explanatory sectional view showing a structural example of an integrated thin film solar cell of the present invention.
【図２】本発明の集積化薄膜太陽電池の構造例を表す説
明用断面図FIG. 2 is an explanatory sectional view showing a structural example of an integrated thin-film solar cell of the present invention.
【図３】本発明の集積化薄膜太陽電池の構造例を表す説
明用断面図FIG. 3 is an explanatory sectional view showing a structural example of an integrated thin-film solar cell of the present invention.
【図４】従来の集積化薄膜太陽電池の構造例を表す説明
用断面図FIG. 4 is an explanatory sectional view showing a structural example of a conventional integrated thin-film solar cell.
１ａ，１ｂ，１ｃ，４０ 集積化薄膜太陽電池 ３ 基板 ５ 第一電極層 ７ 分離帯 ９ 接続用開溝部 １１ 半導体層 １３ 分割溝 １５ 第二電極層 １７ 単位素子 １９ 延設部 ２１ 積層帯部 ２３ 導通溝 ２５ ハンダメッキ銅箔 ２７ 超音波ハンダ ２９ａ，２９ｂ 分離溝 ３１ 開口溝 ３３ 絶縁代 ４２，４６ 取り出し電極 ４４ 溝 1a, 1b, 1c, 40 Integrated thin-film solar cell 3 Substrate 5 First electrode layer 7 Separation band 9 Open groove for connection 11 Semiconductor layer 13 Dividing groove 15 Second electrode layer 17 Unit element 19 Extension part 21 Laminated band part 23 Conduction Groove 25 Solder Plated Copper Foil 27 Ultrasonic Solder 29a, 29b Separation Groove 31 Opening Groove 33 Insulation Allowance 42, 46 Extraction Electrode 44 Groove
Claims (4)
第一電極層の上面側に、二つの第一電極層にわたって一
方の第一電極層上に開口した接続用開溝部を設けた半導
体層が設けられ、この半導体層の上面側には接続用開溝
部を介して一方の第一電極層と電気的に接続した状態で
第二電極層が設けられることにより、第二電極層と他方
の第一電極層に挟まれた領域よりなる単位素子が構成さ
れるとともに、この単位素子が一方向に複数個直列に接
続され、 一方の接続終端部にあっては、終端部側の単位素子の第
二電極層と電気的に接続されかつ終端部側の単位素子の
第一電極層と絶縁された第一電極層が延設されるととも
に、この第一電極層の延設部上には単位素子から連続し
た半導体層と第二電極層とを含む積層帯部が設けられ、 他方の接続終端部にあっては終端部側の単位素子の第一
電極層が延設されるとともに、この第一電極層の延設部
上には終端部側の単位素子との間の分離溝を隔てて半導
体層と第二電極層とを含む積層帯部が設けられ、 両接続終端部の積層帯部に、第一電極層の延設部の表面
に達する導通溝が積層帯部の長手方向に形成された集積
化薄膜太陽電池。1. A connecting groove portion opened on one of the first electrode layers over the two first electrode layers is provided on the upper surface side of the first electrode layer provided on the substrate in a plurality of areas. The semiconductor layer provided is provided, and the second electrode layer is provided on the upper surface side of the semiconductor layer in a state of being electrically connected to one of the first electrode layers through the connection opening portion, A unit element composed of a region sandwiched between the electrode layer and the other first electrode layer is formed, and a plurality of the unit elements are connected in series in one direction. The first electrode layer electrically connected to the second electrode layer of the unit element on the side and insulated from the first electrode layer of the unit element on the end portion side, and the extension of the first electrode layer. A laminated strip portion including a semiconductor layer and a second electrode layer continuous from the unit element is provided on the portion, and In the continuous termination portion, the first electrode layer of the unit element on the termination portion side is extended, and a separation groove between the unit element on the termination portion side is formed on the extension portion of the first electrode layer. A laminated strip portion including a semiconductor layer and a second electrode layer is provided at a distance from each other, and a conductive groove reaching the surface of the extended portion of the first electrode layer is provided in the laminated strip portion of both connection terminal portions in the longitudinal direction of the laminated strip portion. Integrated thin-film solar cell formed on.
第一電極層の上面側に、二つの第一電極層にわたって一
方の第一電極層上に開口した接続用開溝部を設けた半導
体層が設けられ、この半導体層の上面側には接続用開溝
部を介して一方の第一電極層と電気的に接続した状態で
第二電極層が設けられることにより、第二電極層と他方
の第一電極層に挟まれた領域よりなる単位素子が構成さ
れるとともに、この単位素子が一方向に複数個直列に接
続され、 一方の接続終端部にあっては、終端部側の単位素子の第
二電極層と電気的に接続されかつ終端部側の単位素子の
第一電極層と絶縁された第一電極層が延設されるととも
に、この第一電極層の延設部上には終端部側の単位素子
との間の分離溝を隔てて半導体層と第二電極層とを含む
積層帯部が設けられ、 他方の接続終端部にあっては終端部側の単位素子の第一
電極層が延設されるとともに、この第一電極層の延設部
上には終端部側の単位素子との間の分離溝を隔てて半導
体層と第二電極層とを含む積層帯部が設けられ、 両接続終端部の積層帯部に、第一電極層の延設部の表面
に達する導通溝が積層帯部の長手方向に形成された集積
化薄膜太陽電池。2. A connection groove portion opened on one of the first electrode layers over the two first electrode layers is provided on the upper surface side of the first electrode layer provided in a plurality of regions on the substrate. The semiconductor layer provided is provided, and the second electrode layer is provided on the upper surface side of the semiconductor layer in a state of being electrically connected to one of the first electrode layers through the connection opening portion, A unit element composed of a region sandwiched between the electrode layer and the other first electrode layer is formed, and a plurality of the unit elements are connected in series in one direction. The first electrode layer electrically connected to the second electrode layer of the unit element on the side and insulated from the first electrode layer of the unit element on the end portion side, and the extension of the first electrode layer. And a laminated band portion including a semiconductor layer and a second electrode layer with a separation groove between the unit element on the terminal side and Is provided, and at the other connection terminal end, the first electrode layer of the unit element on the terminal end side is extended, and the unit element on the terminal end side is provided on the extended portion of the first electrode layer. A laminated band portion including a semiconductor layer and a second electrode layer is provided with a separation groove between them, and a conductive groove reaching the surface of the extended portion of the first electrode layer is provided in the laminated band portions of both connection terminal portions. An integrated thin-film solar cell formed in the longitudinal direction of a laminated strip.
第一電極層の上面側に、二つの第一電極層にわたって一
方の第一電極層上に開口した接続用開溝部を設けた半導
体層が設けられ、この半導体層の上面側には接続用開溝
部を介して一方の第一電極層と電気的に接続した状態で
第二電極層が設けられることにより、第二電極層と他方
の第一電極層に挟まれた領域よりなる単位素子が構成さ
れるとともに、この単位素子が一方向に複数個直列に接
続され、 一方の接続終端部にあっては、終端部側の単位素子の第
二電極層と電気的に接続されかつ終端部側の単位素子の
第一電極層と絶縁された第一電極層が延設されるととも
に、この第一電極層の延設部上には終端部側の単位素子
との間の分離溝を隔てて半導体層と第二電極層とを含む
積層帯部が、第一電極層の延設部上に設けられた半導体
層の開口溝を介して第二電極層と第一電極層の延設部と
の間が電気的に接続された状態で設けられ、 他方の接続終端部にあっては終端部側の単位素子の第一
電極層が延設されるとともに、この第一電極層の延設部
上には終端部側の単位素子との間の分離溝を隔てて半導
体層と第二電極層とを含む積層帯部が設けられ、 両接続終端部の積層帯部に、第一電極層の延設部の表面
に達する導通溝が積層帯部の長手方向に形成された集積
化薄膜太陽電池。3. A connection groove portion opened on one of the first electrode layers over the two first electrode layers is provided on the upper surface side of the first electrode layer provided on the substrate in a plurality of areas. The semiconductor layer provided is provided, and the second electrode layer is provided on the upper surface side of the semiconductor layer in a state of being electrically connected to one of the first electrode layers through the connection opening portion, A unit element composed of a region sandwiched between the electrode layer and the other first electrode layer is formed, and a plurality of the unit elements are connected in series in one direction. The first electrode layer electrically connected to the second electrode layer of the unit element on the side and insulated from the first electrode layer of the unit element on the end portion side, and the extension of the first electrode layer. And a laminated band portion including a semiconductor layer and a second electrode layer with a separation groove between the unit element on the terminal side and Is provided in a state where the second electrode layer and the extended portion of the first electrode layer are electrically connected via the opening groove of the semiconductor layer provided on the extended portion of the first electrode layer. In the other connection terminal part, the first electrode layer of the unit element on the terminal part side is extended, and on the extended part of the first electrode layer, the unit element on the terminal part side is connected. A laminated strip portion including a semiconductor layer and a second electrode layer is provided to separate the separation groove, and a conductive groove reaching the surface of the extended portion of the first electrode layer is provided in the laminated strip portion of both connection terminal portions. Integrated thin-film solar cell formed in the longitudinal direction of.
外周に沿って少なくとも第二電極層が除去された絶縁代
が形成された請求項１〜３のいずれか１項に記載の集積
化薄膜太陽電池。4. The insulating margin according to claim 1, wherein at least the second electrode layer is removed along the outer periphery of the substrate at appropriate places on the substrate end face side of both laminated strips. Integrated thin-film solar cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23658895A JP3613851B2 (en) | 1995-09-14 | 1995-09-14 | Integrated thin film solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23658895A JP3613851B2 (en) | 1995-09-14 | 1995-09-14 | Integrated thin film solar cell |
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| Publication Number | Publication Date |
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| JPH0983001A true JPH0983001A (en) | 1997-03-28 |
| JP3613851B2 JP3613851B2 (en) | 2005-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP23658895A Expired - Lifetime JP3613851B2 (en) | 1995-09-14 | 1995-09-14 | Integrated thin film solar cell |
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