JPH0982781A - Semiconductor manufacturing equipment - Google Patents
Semiconductor manufacturing equipmentInfo
- Publication number
- JPH0982781A JPH0982781A JP26348095A JP26348095A JPH0982781A JP H0982781 A JPH0982781 A JP H0982781A JP 26348095 A JP26348095 A JP 26348095A JP 26348095 A JP26348095 A JP 26348095A JP H0982781 A JPH0982781 A JP H0982781A
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- transfer
- transfer chamber
- reaction
- reaction chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000012546 transfer Methods 0.000 claims abstract description 79
- 238000006243 chemical reaction Methods 0.000 claims abstract description 59
- 238000010438 heat treatment Methods 0.000 claims abstract description 25
- 238000005192 partition Methods 0.000 abstract description 9
- 239000006227 byproduct Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- 238000001816 cooling Methods 0.000 abstract description 5
- 239000002245 particle Substances 0.000 abstract description 4
- 239000012495 reaction gas Substances 0.000 abstract description 4
- 239000010453 quartz Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 23
- 239000007788 liquid Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002545 silicone oil Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Landscapes
- Manipulator (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】
【課題】 搬送室内壁・反応室との隔壁への反応副生成
物の付着を防止する。反応室の高温化を容易にする。処
理対象基板上のパーティクル数を低減する。
【解決手段】 搬送室１１の周囲に反応室、冷却室、カ
セット室を配設する。各室１２〜１７を隔壁のゲートバ
ルブ２０で搬送室１１に連通可能とする。搬送室１１内
には搬送用ロボット２１を設置する。石英製筺体からな
る反応室１２の外面はヒータ２２で被覆する。また、搬
送室１１の天井に抵抗加熱型ヒータ２４を組み込む。ヒ
ータ２４はコイル状抵抗発熱体等で構成する。反応室１
２の室温に基づき搬送室１１内の温度を調節する。ヒー
タ２４で加熱し、両室温が略等しくなるとゲートバルブ
２０を開けて両室１１，１２を連通させ、ロボット２１
でウェーハを移す。搬送室１１内に侵入した反応ガス成
分も昇華せず、搬送室１１内壁に付着することもない。
(57) 【Abstract】 PROBLEM TO BE SOLVED: To prevent reaction by-products from adhering to a partition wall between a transfer chamber inner wall and a reaction chamber. It facilitates raising the temperature of the reaction chamber. The number of particles on the substrate to be processed is reduced. A reaction chamber, a cooling chamber, and a cassette chamber are arranged around a transfer chamber. The chambers 12 to 17 can be communicated with the transfer chamber 11 by the gate valve 20 of the partition wall. A transfer robot 21 is installed in the transfer chamber 11. The outer surface of the reaction chamber 12 made of a quartz housing is covered with a heater 22. Further, a resistance heating type heater 24 is incorporated in the ceiling of the transfer chamber 11. The heater 24 is composed of a coil-shaped resistance heating element or the like. Reaction chamber 1
The temperature in the transfer chamber 11 is adjusted based on the room temperature of 2. When heated by the heater 24 and the both room temperatures become substantially equal, the gate valve 20 is opened to communicate the two chambers 11 and 12, and the robot 21
Transfer the wafer with. The reaction gas component that has entered the transfer chamber 11 does not sublime and does not adhere to the inner wall of the transfer chamber 11.
Description
【０００１】[0001]
【発明の属する技術分野】この発明は半導体製造装置、
詳しくは半導体ウェーハを加熱処理等する反応室とこの
反応室に該半導体ウェーハを出し入れする搬送ロボット
を装備した搬送室とを備えた半導体製造装置の改良に関
する。TECHNICAL FIELD The present invention relates to a semiconductor manufacturing apparatus,
More specifically, the present invention relates to improvement of a semiconductor manufacturing apparatus provided with a reaction chamber for heating semiconductor wafers and the like and a transfer chamber equipped with a transfer robot for loading and unloading the semiconductor wafer.
【０００２】[0002]
【従来の技術】ＣＶＤ装置・酸化装置・ＰＶＤ装置等の
半導体製造装置には、搬送室（ロボットチャンバ）の周
囲に反応室・冷却室・カセット室等を配設し、これらの
室のそれぞれを搬送室に独立に連通・接続したクラスタ
方式の装置が知られている。このクラスタ方式の装置で
は、大気に触れることなく、処理対象基板である半導体
ウェーハに対する拡散，ＣＶＤ，アニール等の作業を連
続して行うことを可能とするものである。2. Description of the Related Art A semiconductor manufacturing apparatus such as a CVD apparatus, an oxidation apparatus, a PVD apparatus, etc., is provided with a reaction chamber, a cooling chamber, a cassette chamber, etc. around a transfer chamber (robot chamber). There is known a cluster-type device that communicates and connects to a transfer chamber independently. This cluster-type apparatus makes it possible to continuously perform operations such as diffusion, CVD, and annealing on a semiconductor wafer that is a processing target substrate without contacting the atmosphere.
【０００３】そして、このタイプの装置にあっては、従
来、反応室に隣接する搬送室（バッファ室）には、搬送
用ロボットが収容されているのみであり、加熱機構は装
備されてはいなかった。そして、これらの反応室と搬送
室とはゲートバルブの開閉で連通・遮断される構成であ
る。半導体ウェーハ（または基板）を反応室内に装填す
るには、ゲートバルブを開け、搬送室と反応室とを連通
させ、この状態で搬送室内の搬送用ロボットを作動さ
せ、搬送室から半導体ウェーハを反応室に挿入する。そ
の後、このゲートバルブは閉じられて反応室で所定の加
熱などの処理が施される。逆に、反応室で処理された半
導体ウェーハも、ゲートバルブを開けて、搬送用ロボッ
トにより反応室から搬送室に移される。なお、搬送室へ
の半導体ウェーハの出し入れは、カセット室と搬送室と
の間のゲートバルブを開けて搬送用ロボットにより行っ
ている。In the apparatus of this type, conventionally, the transfer chamber (buffer chamber) adjacent to the reaction chamber only accommodates the transfer robot, and is not equipped with the heating mechanism. It was Further, the reaction chamber and the transfer chamber are configured to be connected and disconnected by opening and closing a gate valve. To load a semiconductor wafer (or substrate) into the reaction chamber, open the gate valve, connect the transfer chamber to the reaction chamber, and then operate the transfer robot in the transfer chamber to react the semiconductor wafer from the transfer chamber. Insert into the chamber. After that, the gate valve is closed and a predetermined treatment such as heating is performed in the reaction chamber. Conversely, the semiconductor wafer processed in the reaction chamber is also transferred from the reaction chamber to the transfer chamber by the transfer robot by opening the gate valve. The semiconductor wafer is taken in and out of the transfer chamber by a transfer robot by opening a gate valve between the cassette chamber and the transfer chamber.
【０００４】[0004]
【発明が解決しようとする課題】このように半導体ウェ
ーハ等を反応室と搬送室との間で移送する際、両室は互
いに連通した状態となる。したがって、搬送室内に反応
室内の雰囲気（反応ガス等）が周り込むこととなる。と
ころが、このときの反応室の温度は、例えば６００℃か
らわずかに低下した程度の高温度に維持されているのに
対して、搬送室のそれは室温乃至反応室よりは大幅に低
い温度に保持されている。すなわち、反応室からの気体
が搬送室内に侵入した際、その雰囲気温度が高温から低
温に急変するため、搬送室の内壁に反応副生成物が昇華
・付着する。そして、これが処理対象である基板、例え
ば半導体ウェーハ上のパーティクルの原因となっている
という不具合があった。Thus, when the semiconductor wafer or the like is transferred between the reaction chamber and the transfer chamber, both chambers are in communication with each other. Therefore, the atmosphere (reaction gas or the like) in the reaction chamber enters the transfer chamber. However, the temperature of the reaction chamber at this time is maintained at a high temperature, for example, slightly lower than 600 ° C., while that of the transfer chamber is maintained at room temperature or a temperature significantly lower than that of the reaction chamber. ing. That is, when the gas from the reaction chamber enters the transfer chamber, the atmospheric temperature thereof suddenly changes from a high temperature to a low temperature, so that the reaction by-product sublimes and adheres to the inner wall of the transfer chamber. Then, there is a problem that this causes particles on a substrate to be processed, for example, a semiconductor wafer.
【０００５】また、反応室での処理に際しても、その温
度差により、反応室内で搬送室と隣接する部材（隔壁）
から搬送室に熱が奪われる。このため、反応室自体の高
温化が困難であるという不具合があった。また、反応副
生成物がこの隔壁表面に付着し易いという課題を有して
いた。Also, during processing in the reaction chamber, due to the temperature difference, a member (partition wall) adjacent to the transfer chamber in the reaction chamber.
The heat is taken from the carrier room. Therefore, there is a problem that it is difficult to raise the temperature of the reaction chamber itself. Further, there is a problem that the reaction by-product is likely to adhere to the partition wall surface.
【０００６】そこで、この発明の目的は、搬送室内壁へ
の反応副生成物の付着を防止することである。また、こ
の発明の他の目的は、反応室の隔壁に反応副生成物が付
着することを防止することにある。また、この発明は、
反応室での高温化を容易にすることを、その目的として
いる。さらに、この発明の別の目的は、処理対象基板
（半導体ウェーハ等）上のパーティクル量を低減するこ
とができる半導体製造装置を提供することにある。Therefore, an object of the present invention is to prevent the reaction by-products from adhering to the inner wall of the transfer chamber. Another object of the present invention is to prevent reaction by-products from adhering to the partition walls of the reaction chamber. Further, the present invention is
Its purpose is to facilitate high temperature in the reaction chamber. Still another object of the present invention is to provide a semiconductor manufacturing apparatus capable of reducing the amount of particles on a substrate to be processed (semiconductor wafer or the like).
【０００７】[0007]
【課題を解決するための手段】請求項に記載した発明
は、加熱機構を備えた反応室と、この反応室に連通して
接続され、内部に搬送ロボットを収容した搬送室と、を
備えた半導体製造装置において、上記搬送室を加熱する
加熱手段を備えたものである。この搬送室の加熱手段と
しては、例えば搬送室外壁またはその壁面構成部材の内
部に抵抗加熱ヒータを組み込むことが考えられる。ま
た、加熱手段として、搬送室内壁に配管を配して、これ
に高温度の液体（シリコンオイル等）を循環させること
も考えられる。According to the present invention, there is provided a reaction chamber having a heating mechanism, and a transfer chamber which is connected in communication with the reaction chamber and accommodates a transfer robot therein. The semiconductor manufacturing apparatus is provided with a heating means for heating the transfer chamber. As a heating means for the transfer chamber, for example, a resistance heater may be incorporated into the outer wall of the transfer chamber or the inside of the wall surface member. Further, as a heating means, it is possible to arrange a pipe on the inner wall of the transfer chamber and circulate a high temperature liquid (silicon oil or the like) in the pipe.
【０００８】この発明によれば、搬送室を加熱すること
ができ、その温度コントロールが容易となる。よって、
搬送室の室温を反応室のそれと同一または近似した値と
することが容易となる。例えば反応室が高温度の場合は
搬送室もこれに近似した温度とすることで、両室を連通
させたときの反応ガスの温度の急降下を防ぎ、ガス中成
分の昇華による内壁への副生成物の付着を完全に阻止す
ることができる。また、反応室と搬送室とを遮断した場
合の反応室隔壁面への副生成物の付着をも防止すること
ができる。さらに、反応室の高温化も速やかに達成する
ことができる。According to the present invention, the transfer chamber can be heated, and the temperature control thereof can be facilitated. Therefore,
It becomes easy to set the room temperature of the transfer chamber to the same value as or a value close to that of the reaction chamber. For example, when the temperature of the reaction chamber is high, the temperature of the transfer chamber should be set to a temperature close to this to prevent a sudden drop in the temperature of the reaction gas when the two chambers are in communication, and by-produce the components in the gas to the inner wall It is possible to completely prevent the adhesion of substances. It is also possible to prevent by-products from adhering to the reaction chamber partition wall surface when the reaction chamber and the transfer chamber are shut off from each other. Furthermore, the temperature of the reaction chamber can be raised rapidly.
【０００９】[0009]
【発明の実施の形態】以下、この発明に係る半導体製造
装置の一実施例を図面を参照して説明する。図１〜図３
は一実施例に係る半導体製造装置を示している。この実
施例にあっては、半導体製造装置としてクラスタ型の拡
散装置（枚葉型）にこの発明を適用した例を示してい
る。これらの図において、１１は搬送室（バッファ室ま
たはロボットチャンバともいう）を示し、この搬送室１
１の周囲に反応室１２，１３、冷却室１４，１５、カセ
ット室１６，１７が配設されている。詳しくは、図２に
示すように、搬送室１１は、その外観形状において天井
および底壁が６角形の角筒状に形成され、その６角形の
一辺に対応した６つの側壁に対応してこれらの室１２〜
１７が連設されている。すなわち、各室１２〜１７は、
搬送室１１との隔壁部分に設けたゲートバルブ２０を介
して搬送室１１に連通可能に付設されている。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a semiconductor manufacturing apparatus according to the present invention will be described below with reference to the drawings. 1 to 3
Shows a semiconductor manufacturing apparatus according to an embodiment. In this embodiment, an example in which the present invention is applied to a cluster type diffusion device (single-wafer type) as a semiconductor manufacturing device is shown. In these drawings, reference numeral 11 denotes a transfer chamber (also called a buffer chamber or robot chamber).
The reaction chambers 12 and 13, the cooling chambers 14 and 15, and the cassette chambers 16 and 17 are arranged around the circumference of 1. More specifically, as shown in FIG. 2, the transfer chamber 11 has a ceiling and a bottom wall formed into a hexagonal prismatic shape in its external shape, and these six side walls correspond to one side of the hexagon. Room 12 ~
17 are arranged in series. That is, each room 12-17 is
It is attached so as to be able to communicate with the transfer chamber 11 via a gate valve 20 provided in a partition wall portion with the transfer chamber 11.
【００１０】搬送室１１内には搬送用ロボット２１が収
容・設置されており、この搬送用ロボット２１は各室１
２〜１７の間での半導体ウェーハ（または処理対象基
板）の挿入・取出を行っている。例えばゲートバルブ２
０を開放してカセット室１６と搬送室１１とを連通さ
せ、搬送用ロボット２１（ツイーザ）を作動させてカセ
ット室１６から搬送室１１に半導体ウェーハをいったん
取り出す。そして、このゲートバルブ２０は閉じて反応
室１２との間の別のゲートバルブ２０を開放して反応室
１２に半導体ウェーハを挿入・装填するものである。A transfer robot 21 is housed and installed in the transfer chamber 11, and the transfer robot 21 is installed in each chamber 1.
The semiconductor wafer (or the substrate to be processed) is inserted / removed between 2 to 17. For example, gate valve 2
By opening 0, the cassette chamber 16 and the transfer chamber 11 are communicated with each other, and the transfer robot 21 (tweezers) is operated to take out the semiconductor wafer from the cassette chamber 16 to the transfer chamber 11 once. The gate valve 20 is closed and another gate valve 20 between the gate valve 20 and the reaction chamber 12 is opened to insert and load a semiconductor wafer into the reaction chamber 12.
【００１１】各反応室１２，１３は石英製の筺体構造で
あって、その周囲には、それぞれ、ヒータ２２がその外
面を被覆するように取り付けられている。ヒータ２２は
反応室１２，１３内に装填された半導体ウェーハを効率
的に加熱するものである。このヒータ２２は反応室１
２，１３を例えば６００℃以上に加熱することができる
ものとする。Each of the reaction chambers 12 and 13 has a housing structure made of quartz, and a heater 22 is attached around the reaction chambers 12 and 13 so as to cover the outer surface thereof. The heater 22 efficiently heats the semiconductor wafers loaded in the reaction chambers 12 and 13. The heater 22 is the reaction chamber 1
It is assumed that 2 and 13 can be heated to, for example, 600 ° C. or higher.
【００１２】ここで、上記搬送室１１には例えば５０℃
〜１００℃にその室内を加熱可能な加熱手段が装備され
ている。この加熱手段は、搬送室１１の壁面（天井）に
抵抗加熱型ヒータ２４を組み込んで構成されている。こ
のヒータ２４は搬送室１１の外壁または部材内部に組み
込んでもよい。このヒータ２４の主要部は、例えばコイ
ル状の抵抗発熱体、断熱層、ケースで構成されている。
通常使用される発熱体の素材は、直径１０ｍｍのＦｅ−
Ｃｒ−Ａｌ系合金であり、これをスパイラル状に巻き、
素線の変形を防止するための保持ピースで支え、その外
周を高純度のアルミナウール断熱材で覆ったものが用い
られている。そして、このヒータ２４にあっては、ヒー
タ性能である均熱長、リカバリー特性、昇降温特性、長
時間安定性、断面均熱特性、寿命などを考慮してヒータ
ゾーン広さ、素線径および巻き方、断熱方法などが適宜
設定されている。また、加熱手段は、図示していないが
温度調節器を備え、この温度調節器により搬送室１１の
温度の設定を行っている。Here, in the transfer chamber 11, for example, 50 ° C.
It is equipped with heating means capable of heating the room to -100 ° C. This heating means is configured by incorporating a resistance heating type heater 24 on the wall surface (ceiling) of the transfer chamber 11. The heater 24 may be incorporated into the outer wall of the transfer chamber 11 or inside the member. The main part of the heater 24 is composed of, for example, a coil-shaped resistance heating element, a heat insulating layer, and a case.
The material of the heating element normally used is Fe- with a diameter of 10 mm.
It is a Cr-Al alloy and is wound in a spiral shape.
It is supported by a holding piece for preventing the wire from being deformed, and its outer circumference is covered with a high-purity alumina wool heat insulating material. In the heater 24, the heater zone width, the wire diameter, and the wire diameter are considered in consideration of the heater performance such as soaking length, recovery characteristic, temperature rising / falling characteristic, long-term stability, cross-section soaking characteristic, and life. The winding method, heat insulation method, etc. are set appropriately. Further, the heating means includes a temperature controller (not shown), and the temperature of the transfer chamber 11 is set by the temperature controller.
【００１３】以上の構成に係る半導体製造装置にあって
は、各室１２〜１７間での半導体ウェーハの移送は搬送
室１１を介して行われる。この際、例えば反応室１２か
ら搬送室１１に半導体ウェーハを移す場合は、その間の
隔壁部分に設けたゲートバルブ２０を開けて両室を連通
させて行う。このとき、反応室１２の室内温度を検出・
測定し、この室温に基づいて搬送室１１内の温度を調節
する。これら両室の温度差が小さくなるようにコントロ
ールする。すなわち、反応室１２温度に近くなるまでヒ
ータ２４を駆動して搬送室１１を加熱するものである。
そして、両室温がほぼ等しくなったときゲートバルブ２
０を開けて両室１１，１２を連通させ、搬送用ロボット
２１を作動させて半導体ウェーハを移す。この結果、搬
送室１１内に侵入した反応ガスの成分も昇華することな
く、搬送室１１の内壁に付着することもない。なお、こ
のガスは、図示していない排気手段により排気されるこ
ととなる。In the semiconductor manufacturing apparatus having the above structure, the transfer of the semiconductor wafer between the chambers 12 to 17 is performed via the transfer chamber 11. At this time, for example, when the semiconductor wafer is transferred from the reaction chamber 12 to the transfer chamber 11, the gate valve 20 provided in the partition wall between them is opened to communicate the two chambers. At this time, the temperature inside the reaction chamber 12 is detected.
The temperature inside the transfer chamber 11 is measured based on the measured room temperature. Control is performed so that the temperature difference between these two chambers is small. That is, the heater 24 is driven to heat the transfer chamber 11 until the temperature of the reaction chamber 12 approaches.
And when both room temperatures become almost equal, the gate valve 2
Open 0 to make both chambers 11 and 12 communicate with each other, and operate the transfer robot 21 to transfer the semiconductor wafer. As a result, the components of the reaction gas that have penetrated into the transfer chamber 11 do not sublime or adhere to the inner wall of the transfer chamber 11. This gas will be exhausted by an exhaust means (not shown).
【００１４】また、半導体ウェーハが反応室１２から取
り出されるとゲートバルブ２０は閉じられ、例えば冷却
室１４との間のゲートバルブ２０が開かれる。搬送用ロ
ボット２１は半導体ウェーハを例えば冷却室１４に挿入
することとなる。以後、上記操作が繰り返されて各室間
での半導体ウェーハの移送が行われることとなる。ま
た、反応室１２内に半導体ウェーハが装填されて加熱処
理を行う場合、搬送室１１の室温をその加熱に伴い上昇
させることで、その反応室１２の加熱を迅速に行うこと
も可能となる。When the semiconductor wafer is taken out of the reaction chamber 12, the gate valve 20 is closed, and the gate valve 20 between the semiconductor wafer and the cooling chamber 14 is opened. The transfer robot 21 inserts a semiconductor wafer into the cooling chamber 14, for example. After that, the above operation is repeated to transfer the semiconductor wafer between the chambers. Further, when a semiconductor wafer is loaded in the reaction chamber 12 and heat treatment is performed, it is possible to heat the reaction chamber 12 quickly by raising the room temperature of the transfer chamber 11 with the heating.
【００１５】また、上記実施例の他にも、搬送室の加熱
手段としては各種のものが採用することができる。例え
ば搬送室内壁に配管を埋設し、この配管中に所定温度に
制御された液体を循環させることができる。この場合、
使用する液体としてはシリコンオイル等の沸点の高い液
体が制御性上好適である。In addition to the above embodiment, various kinds of heating means for the transfer chamber may be used. For example, a pipe can be embedded in the inner wall of the transfer chamber, and a liquid controlled to a predetermined temperature can be circulated in the pipe. in this case,
As the liquid to be used, a liquid having a high boiling point such as silicone oil is suitable in terms of controllability.
【００１６】[0016]
【発明の効果】この発明によれば、搬送室内壁および反
応室隔壁への反応副生成物の付着を大幅に低減すること
ができる。その結果、搬送室、反応室のクリーニング頻
度が低減する。また、処理対象基板の一つである半導体
ウェーハ上のパーティクル数も低減する。また、反応室
での反応に関しても、副生成物が付着して実用不可能だ
った高圧力の反応条件も実用可能となり、当該装置の用
途の幅も広がる。According to the present invention, the adhesion of reaction by-products to the inner wall of the transfer chamber and the partition walls of the reaction chamber can be significantly reduced. As a result, the frequency of cleaning the transfer chamber and the reaction chamber is reduced. Also, the number of particles on the semiconductor wafer, which is one of the substrates to be processed, is reduced. Further, regarding the reaction in the reaction chamber, the reaction conditions of high pressure, which was impossible for practical use due to the attachment of by-products, can also be practically used, and the range of applications of the apparatus is widened.
【図１】この発明の一実施例に係る半導体製造装置の主
要部分を示す斜視図である。FIG. 1 is a perspective view showing a main part of a semiconductor manufacturing apparatus according to an embodiment of the present invention.
【図２】この発明の一実施例に係る半導体製造装置を示
す平面図である。FIG. 2 is a plan view showing a semiconductor manufacturing apparatus according to an embodiment of the present invention.
【図３】この発明の一実施例に係る半導体製造装置を示
すもので図２のIII−III線矢視断面図である。3 is a sectional view taken along line III-III of FIG. 2 showing a semiconductor manufacturing apparatus according to an embodiment of the present invention.
１１ 搬送室 １２，１３ 反応室 ２０ ゲートバルブ ２１ 搬送用ロボット ２２ 反応室加熱用ヒータ ２４ 搬送室加熱用ヒータ 11 transfer chamber 12, 13 reaction chamber 20 gate valve 21 transfer robot 22 reaction chamber heating heater 24 transfer chamber heating heater
Claims (1)
収容した搬送室と、を備えた半導体製造装置において、 上記搬送室を加熱する加熱手段を備えたことを特徴とす
る半導体製造装置。1. A semiconductor manufacturing apparatus comprising: a reaction chamber having a heating mechanism; and a transfer chamber communicating with and connected to the reaction chamber and accommodating a transfer robot therein. Heating for heating the transfer chamber. A semiconductor manufacturing apparatus comprising means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26348095A JPH0982781A (en) | 1995-09-18 | 1995-09-18 | Semiconductor manufacturing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26348095A JPH0982781A (en) | 1995-09-18 | 1995-09-18 | Semiconductor manufacturing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0982781A true JPH0982781A (en) | 1997-03-28 |
Family
ID=17390101
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26348095A Pending JPH0982781A (en) | 1995-09-18 | 1995-09-18 | Semiconductor manufacturing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0982781A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2003073496A1 (en) * | 2002-02-27 | 2003-09-04 | Anelva Corporation | Method of operating substrate processing device |
| JP2008211196A (en) * | 2007-01-31 | 2008-09-11 | Tokyo Electron Ltd | Substrate processing apparatus and particle adhesion preventing method |
| WO2009034822A1 (en) * | 2007-09-10 | 2009-03-19 | Tokyo Electron Limited | Substrate processing apparatus, method for suppressing contamination of substrate processing apparatus, and storage medium |
| US7615259B2 (en) | 2001-02-15 | 2009-11-10 | Tokyo Electron Limited | Method and apparatus for processing workpiece |
| US8124539B2 (en) | 2003-04-24 | 2012-02-28 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| CN107871682A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | Transmission chamber and semiconductor processing equipment |
| CN115110061A (en) * | 2021-03-22 | 2022-09-27 | Asm Ip私人控股有限公司 | Temperature controlled reaction chamber |
-
1995
- 1995-09-18 JP JP26348095A patent/JPH0982781A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7615259B2 (en) | 2001-02-15 | 2009-11-10 | Tokyo Electron Limited | Method and apparatus for processing workpiece |
| US8287967B2 (en) | 2001-02-15 | 2012-10-16 | Tokyo Electron Limited | Method and apparatus for processing workpiece |
| WO2003073496A1 (en) * | 2002-02-27 | 2003-09-04 | Anelva Corporation | Method of operating substrate processing device |
| CN1326226C (en) * | 2002-02-27 | 2007-07-11 | 安内华股份有限公司 | Method of operating substrate processing device |
| US8124539B2 (en) | 2003-04-24 | 2012-02-28 | Tokyo Electron Limited | Plasma processing apparatus, focus ring, and susceptor |
| JP2008211196A (en) * | 2007-01-31 | 2008-09-11 | Tokyo Electron Ltd | Substrate processing apparatus and particle adhesion preventing method |
| WO2009034822A1 (en) * | 2007-09-10 | 2009-03-19 | Tokyo Electron Limited | Substrate processing apparatus, method for suppressing contamination of substrate processing apparatus, and storage medium |
| CN107871682A (en) * | 2016-09-27 | 2018-04-03 | 北京北方华创微电子装备有限公司 | Transmission chamber and semiconductor processing equipment |
| CN115110061A (en) * | 2021-03-22 | 2022-09-27 | Asm Ip私人控股有限公司 | Temperature controlled reaction chamber |
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