JPH098095A - Separation apparatus for laminated semiconductor wafer and separation method thereof - Google Patents
Separation apparatus for laminated semiconductor wafer and separation method thereofInfo
- Publication number
- JPH098095A JPH098095A JP7155719A JP15571995A JPH098095A JP H098095 A JPH098095 A JP H098095A JP 7155719 A JP7155719 A JP 7155719A JP 15571995 A JP15571995 A JP 15571995A JP H098095 A JPH098095 A JP H098095A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- nozzle
- laminated
- air
- laminated wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H10P72/0428—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
- B28D5/0094—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work the supporting or holding device being of the vacuum type
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- De-Stacking Of Articles (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
(57)【要約】
【目的】フラットエアノズルとスイングエアジェットノ
ズルとの組み合わせで、ウエハの表面にキズを付けるこ
となく、確実に積層ウエハを一枚づつに分離する。
【構成】積層ウエハ１を上下降ステージ６の乗せ、積層
ウエハ１の最上面にあるウエハの表面はロボット吸着ノ
ズル４の吸着部５で吸着され、フラットエアノズル３か
ら積層ウエハの複数枚に当たる空気流９を積層ウエハ１
の側面に当て、ウエハを２〜３枚の塊に分離し、スイン
グエアジェットノズル２で空気流８を当て、確実に積層
ウエハを分離する。
(57) [Abstract] [Purpose] A flat air nozzle and a swing air jet nozzle are combined to reliably separate the laminated wafers one by one without scratching the surface of the wafer. [Structure] A laminated wafer 1 is placed on an up-and-down stage 6, and the uppermost wafer surface of the laminated wafer 1 is adsorbed by an adsorption part 5 of a robot adsorption nozzle 4, and an air flow from a flat air nozzle 3 to hit a plurality of laminated wafers. 9 laminated wafer 1
, The wafer is separated into 2-3 pieces, and the swing air jet nozzle 2 applies an air flow 8 to surely separate the laminated wafers.
Description
【０００１】[0001]
【産業上の利用分野】この発明は、積層された半導体ウ
エハを一枚づつ分離する積層ウエハの分離装置に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a laminated wafer separating apparatus for separating laminated semiconductor wafers one by one.
【０００２】[0002]
【従来の技術】図３は従来の積層ウエハの分離装置の要
部構成図を示す。この図は模式的な図であり実際の装置
を簡略化して書れている。積層ウエハ１（積層された半
導体ウエハのこと）が上下降ステージ６にセットされて
いる。最上位置のウエハの表面はロボット吸着ハンド４
の吸着部５に吸着されている。積層ウエハ１側面はフラ
ットエアノズル３からの空気流９に曝される。この空気
流９の圧力により、積層ウエハ１は一枚づつ分離され、
ロボット吸着ハンド４の吸着部５に一枚のウエハだけが
吸着され、つぎの工程に一枚のウエハが搬送される。2. Description of the Related Art FIG. 3 is a schematic view of a main part of a conventional laminated wafer separating apparatus. This diagram is a schematic diagram, and the actual device is simplified. A laminated wafer 1 (which is a laminated semiconductor wafer) is set on an upper / lower stage 6. The top surface of the wafer is the robot suction hand 4
Is adsorbed on the adsorbing part 5 of. The side surface of the laminated wafer 1 is exposed to the air flow 9 from the flat air nozzle 3. Due to the pressure of the air flow 9, the laminated wafers 1 are separated one by one,
Only one wafer is sucked by the suction unit 5 of the robot suction hand 4, and one wafer is transferred to the next step.
【０００３】[0003]
【発明が解決しようとする課題】しかしフラットエアノ
ズルは固定され、しかも数枚のウエハに空気流が当たる
ため、ウエハが鏡面でしかも薄い場合には、数枚同時に
ロボット吸着ハンドで持ち上げられ、次の工程に搬送さ
れる不都合が生じることがある。また、それを防ぐため
に、ロボット吸着ハンドを水平方向に、つまり横方向に
ズラして一枚づつ分離するとウエハ表面が擦れてキズが
付くという問題が生ずる。However, since the flat air nozzle is fixed and the air flow hits several wafers, when the wafers are mirror-like and thin, several wafers are simultaneously lifted by the robot suction hand, and Inconvenience of being transported to the process may occur. In order to prevent this, when the robot suction hand is slid horizontally, that is, laterally and separated one by one, there arises a problem that the wafer surface is rubbed and scratched.
【０００４】この発明の目的は、前記課題を解決するた
めに、ウエハの表面にキズを付けることなく、確実に一
枚づつにウエハを分離することができる積層ウエハの分
離装置とその分離方法を提供することにある。In order to solve the above problems, an object of the present invention is to provide a laminated wafer separating apparatus and a separating method thereof, which can surely separate the wafers one by one without scratching the surface of the wafer. To provide.
【０００５】[0005]
【課題を解決するための手段】前記の目的を達成するた
めに、積層ウエハの最上面を吸着部で持ち上げ、積層ウ
エハの側面から空気流を当ててウエハを一枚づつ分離す
る分離装置において、積層ウエハの内複数枚のウエハの
側面に対向した位置から空気流を当てるフラットエアノ
ズルと、先端が絞られ、フラットエアノズルより狭い範
囲でかつ上方の積層ウエハの側面に空気流を当てるスイ
ングエアジェットノズルとを備えるとよい。In order to achieve the above-mentioned object, a separating apparatus for lifting the uppermost surface of a laminated wafer by a suction unit and applying an air flow from the side surface of the laminated wafer to separate the wafers one by one, A flat air nozzle that applies airflow from positions facing the side surfaces of multiple wafers in the laminated wafer, and a swing air jet nozzle that narrows the tip and applies the airflow to the side surface of the laminated wafer that is narrower than the flat air nozzle and above. It is good to have and.
【０００６】このスイングエアジェットノズルが積層ウ
エハの表面に対してマイナス４５度ないしプラス４５度
の範囲ノズル先端がスイングすると効果的である。また
ノズル先端の直径が０．１ないし０．８ｍｍφであると
よい。またスイングエアジェットノズルからの空気流
の、積層ウエハの側面に当たる空気圧が０．１ないし
０．５ｋｇ／ｃｍ-2であるとよい。It is effective that the swing air jet nozzle swings at the nozzle tip in the range of minus 45 degrees to plus 45 degrees with respect to the surface of the laminated wafer. The diameter of the nozzle tip is preferably 0.1 to 0.8 mmφ. Further, it is preferable that the air pressure of the air flow from the swing air jet nozzle, which is applied to the side surface of the laminated wafer, is 0.1 to 0.5 kg / cm −2 .
【０００７】フラットエアノズルで積層ウエハの内複数
枚のウエハの側面に対向した位置から空気流を当てる工
程と、スイングエアジェットノズルで、先端が絞られ、
フラットエアノズルより狭い範囲でかつ上方の積層ウエ
ハの側面に、空気流を当てる工程とで積層ウエハを分離
するとよい。[0007] A step of applying an air flow from a position facing the side surfaces of a plurality of wafers in the laminated wafer with a flat air nozzle, and the tip is narrowed with a swing air jet nozzle,
It is advisable to separate the laminated wafer by a step of applying an air flow to the side surface of the laminated wafer above and narrower than the flat air nozzle.
【０００８】[0008]
【作用】フラットエアノズルで積層ウエハが２〜３枚の
塊で分離されても、スイングエアジェットノズルで空気
流が絞られ、しかもノズルの先端が移動することで、空
気流がウエハの側面に垂直に当たるばかりでなく、斜め
にしかも下方からも上方からも当たるため、２〜３枚重
なったウエハは確実に一枚づつ分離することになる。そ
の一枚のウエハをロボット吸着ハンドで持ち上げ次工程
に搬送することができる。[Effect] Even if the laminated wafers are separated into 2-3 pieces by the flat air nozzle, the air flow is narrowed by the swing air jet nozzle and the tip of the nozzle moves, so that the air flow is perpendicular to the side surface of the wafer. Not only hitting the wafer but also hitting it obliquely and from below and from above, it is possible to reliably separate the stacked wafers one by one. The single wafer can be picked up by a robot suction hand and transferred to the next step.
【０００９】[0009]
【実施例】図１は一実施例の積層ウエハの分離装置の要
部構成図を示す。図３と同様にこの図も模式的な図であ
る。この積層ウエハの分離装置の主要構成要素に、積層
ウエハ１を乗せ、所定の位置まで上昇させるための上下
降ステージ６と積層ウエハ１に空気流８、９を送る２種
類のノズルが設けられている。ノズルの一つはフラット
エアノズル３、もう一つはスイングエアジェットノズル
２である。また積層ウエハ１の最上面にあるウエハの表
面はロボット吸着ハンド４の吸着部５で吸着され、ロボ
ット吸着ハンド４で積層ウエハ１は持ち上げられる。ウ
エハが鏡面でしかも厚みが２００〜３００μｍと薄い場
合は互いのウエハは接着状態にあり持ち上げただけでは
分離しない。フラットエアノズル３から積層ウエハの複
数枚に当たる空気流９を積層ウエハ１の側面に当て、ウ
エハを分離するが、この時２〜３枚の塊で分離すること
が多い。２〜３枚が重なっているウエハを一枚づつ分離
するため、スイングエアジェットノズル２を円弧を描く
様に移動させ、ウエハの側面に対して、上下斜め方向、
及び垂直方向に空気流を当て、確実にウエハを分離す
る。その後、このウエハはロボット吸着ハンド４の吸着
部５で吸着され、次工程に搬送される。その後で、再度
上下降ステージ６をウエハ一枚分だけ上げ、同様の動作
を繰り返す。スイングエアジェットノズル２の角度はウ
エハ側面に垂直な方向を０度とした場合、その垂直な方
向に対し−４５度から＋４５度の範囲がよいが分離効率
がさらに高まるのは−３０度から＋３０度の範囲であ
る。またスイングエアジェットノズル２の空気流８を流
す孔の直径は０．１〜０．８ｍｍφがよいが、分離効率
がさらに高くなるのは０．２〜０．５ｍｍφである。さ
らにスイングエアジェットノズルからでる空気流８のウ
エハ側面での空気圧は０．１〜０．５ｋｇ／ｍｍ-2がよ
いが、分離効率が一層高まるのは０．２〜０．３ｋｇ／
ｍｍ-2である。DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is a schematic view of the essential parts of a laminated wafer separating apparatus according to an embodiment. Similar to FIG. 3, this diagram is also a schematic diagram. An upper / lower stage 6 for placing the laminated wafer 1 on it and raising it to a predetermined position, and two kinds of nozzles for sending air streams 8 and 9 to the laminated wafer 1 are provided on the main components of the laminated wafer separating apparatus. There is. One of the nozzles is a flat air nozzle 3 and the other is a swing air jet nozzle 2. The surface of the uppermost wafer of the laminated wafer 1 is adsorbed by the adsorption portion 5 of the robot adsorption hand 4, and the laminated wafer 1 is lifted by the robot adsorption hand 4. When the wafers have a mirror surface and a thin thickness of 200 to 300 μm, the wafers are in a bonded state and cannot be separated only by lifting. The flat air nozzle 3 applies an air flow 9 hitting a plurality of laminated wafers to the side surface of the laminated wafer 1 to separate the wafers, but at this time, the wafers are often separated into a few lumps. In order to separate the two or three overlapping wafers one by one, the swing air jet nozzle 2 is moved so as to draw an arc, and the side surface of the wafer is tilted vertically and diagonally.
And vertical airflow to ensure separation of the wafers. After that, this wafer is sucked by the suction unit 5 of the robot suction hand 4 and transferred to the next step. After that, the up / down stage 6 is raised again by one wafer, and the same operation is repeated. When the angle perpendicular to the side surface of the wafer is 0 °, the angle of the swing air jet nozzle 2 is preferably in the range of −45 ° to + 45 ° with respect to the vertical direction, but the separation efficiency is further improved from −30 ° to +30. The range of degrees. The diameter of the hole through which the air flow 8 of the swing air jet nozzle 2 flows is preferably 0.1 to 0.8 mmφ, but the separation efficiency is further increased to 0.2 to 0.5 mmφ. Further, the air pressure of the air flow 8 emitted from the swing air jet nozzle on the side surface of the wafer is preferably 0.1 to 0.5 kg / mm -2 , but the separation efficiency is further increased to 0.2 to 0.3 kg /
mm -2 .
【００１０】図２は図１のノズル付近の拡大図を示す。
フラットエアノズル３で予備的に積層ウエハ１を分離
し、この時２〜３枚重なっているウエハをスイングエア
ジェットノズル２のノズル先端を円弧を描くように移動
させ（同図のノズル部に円弧を描く方向を矢印１０で示
した）、ウエハ側面の狭い範囲に空気流８を当てること
で確実に一枚づつウエハを分離する。同図の空気流８は
スイングエアジェットノズル２の先端が角度を変えて空
気を流した場合を重ねて示したため広がったように描か
れているが、或る瞬間で見ると、一本の点線がその時点
の空気流８を表す。その空気流８の方向は矢印１１のよ
うに変化する。分離されたウエハ７はロボット吸着ハン
ド４の吸着部５で吸着され、次工程に搬送される。FIG. 2 is an enlarged view of the vicinity of the nozzle shown in FIG.
The laminated wafer 1 is preliminarily separated by the flat air nozzle 3, and at this time, two or three overlapping wafers are moved so that the nozzle tip of the swing air jet nozzle 2 draws a circular arc (the circular arc is drawn on the nozzle portion in the same figure). The drawing direction is indicated by the arrow 10), and the air flow 8 is applied to the narrow area on the side surface of the wafer to surely separate the wafers one by one. The air flow 8 in the figure is drawn as if it spreads because the tip of the swing air jet nozzle 2 is overlapped with the case where the air is flowed with the angle changed, but when viewed at a certain moment, a single dotted line Represents the air flow 8 at that time. The direction of the air flow 8 changes as shown by arrow 11. The separated wafer 7 is sucked by the suction unit 5 of the robot suction hand 4 and is transferred to the next step.
【００１１】[0011]
【発明の効果】この発明により、ウエハの表面が鏡面で
しかも厚みが薄い場合でも、確実に積層ウエハを一枚づ
つ分離でき、次工程にウエハを確実に搬送できるため、
装置の稼働率が向上できる。また積層ウエハの分離にお
いて、横にウエハを移動させる動作がないため、ウエハ
同志が擦れず、ウエハ表面にキズが付くことはない。従
って、キズによる製品の特性不良を防止でき、結果とし
て、良品率の向上を図ることができる。According to the present invention, even when the surface of the wafer is a mirror surface and the thickness is thin, the laminated wafers can be reliably separated one by one, and the wafers can be reliably conveyed to the next step.
The operating rate of the device can be improved. Further, in the separation of the laminated wafers, since there is no operation of moving the wafers laterally, the wafers are not rubbed with each other and the wafer surface is not scratched. Therefore, it is possible to prevent defective characteristics of the product due to scratches, and as a result, it is possible to improve the yield rate.
【図１】この発明の一実施例の要部構造断面図FIG. 1 is a sectional view showing the structure of a main part of an embodiment of the present invention.
【図２】図２に分離に使われるノズル付近の拡大図FIG. 2 is an enlarged view of the vicinity of the nozzle used for separation in FIG.
【図３】従来の積層ウエハの分離装置の断面図FIG. 3 is a cross-sectional view of a conventional laminated wafer separating device.
１ 積層ウエハ ２ スイングエアジェットノズル ３ フラットエアノズル ４ ロボット吸着ハンド ５ 吸着部 ６ 上下降ステージ ７ 分離されたウエハ ８ 空気流 ９ 空気流 １０ 矢印 １１ 矢印 1 Laminated Wafer 2 Swing Air Jet Nozzle 3 Flat Air Nozzle 4 Robot Adsorption Hand 5 Adsorption Part 6 Up / Down Stage 7 Separated Wafer 8 Air Flow 9 Air Flow 10 Arrow 11 Arrow
Claims (5)
う）の最上面を吸着部で持ち上げ、積層ウエハの側面か
ら空気流を当ててウエハを一枚づつ分離する分離装置に
おいて、積層ウエハの内複数枚のウエハの側面に対向し
た位置から空気流を当てるフラットエアノズルと、先端
が絞られ、フラットエアノズルより狭い範囲でかつ上方
の積層ウエハの側面に空気流を当てるスイングエアジェ
ットノズルとを備えたことを特徴とする積層ウエハの分
離装置。1. A separating apparatus for lifting an uppermost surface of a laminated semiconductor wafer (hereinafter referred to as a laminated wafer) by a suction unit and separating the wafers one by one by applying an airflow from the side surface of the laminated wafer. A flat air nozzle that applies an air flow from a position facing the side surface of the wafer, and a swing air jet nozzle that narrows the tip and applies an air flow to the side surface of the laminated wafer above and narrower than the flat air nozzle. Characteristic laminated wafer separation device.
の表面に対してマイナス４５度ないしプラス４５度の範
囲でノズル先端がスイングすることを特徴とする請求項
１記載の積層ウエハの分離装置。2. The apparatus for separating a laminated wafer according to claim 1, wherein the swing air jet nozzle swings the tip of the nozzle within a range of −45 degrees to +45 degrees with respect to the surface of the laminated wafer.
ｍφであることを特徴とする請求項１記載の積層ウエハ
の分離装置。3. The diameter of the nozzle tip is 0.1 to 0.8 m.
2. The separation apparatus for a laminated wafer according to claim 1, wherein m is φ.
の、積層ウエハの側面に当たる空気圧が０．１ないし
０．５ｋｇ／ｃｍ-2であることを特徴とする請求項１記
載の積層ウエハの分離装置。4. The laminated wafer separating apparatus according to claim 1, wherein the air pressure of the air flow from the swing air jet nozzle, which is applied to the side surface of the laminated wafer, is 0.1 to 0.5 kg / cm −2. .
枚のウエハの側面に対向した位置から空気流を当てる工
程と、スイングエアジェットノズルで、先端が絞られ、
フラットエアノズルより狭い範囲でかつ上方の積層ウエ
ハの側面に、空気流を当てる工程とからなることを特徴
とする積層ウエハの分離方法。5. A step of applying an air flow from a position facing a side surface of a plurality of wafers of a laminated wafer with a flat air nozzle, and a tip thereof is narrowed with a swing air jet nozzle,
A method for separating a laminated wafer, comprising the step of applying an air flow to a side surface of the laminated wafer that is narrower than the flat air nozzle and is located above the flat air nozzle.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7155719A JPH098095A (en) | 1995-06-22 | 1995-06-22 | Separation apparatus for laminated semiconductor wafer and separation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7155719A JPH098095A (en) | 1995-06-22 | 1995-06-22 | Separation apparatus for laminated semiconductor wafer and separation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH098095A true JPH098095A (en) | 1997-01-10 |
Family
ID=15611999
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7155719A Pending JPH098095A (en) | 1995-06-22 | 1995-06-22 | Separation apparatus for laminated semiconductor wafer and separation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH098095A (en) |
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| US6427747B1 (en) * | 1997-06-16 | 2002-08-06 | Canon Kabushiki Kaisha | Apparatus and method of separating sample and substrate fabrication method |
| WO2002067295A1 (en) * | 2001-02-21 | 2002-08-29 | Pirmin Gerhard Muffler | Method and device for separating a semiconductor wafer from a carrier |
| KR100413146B1 (en) * | 1998-04-01 | 2003-12-31 | 캐논 가부시끼가이샤 | Member separating apparatus and member separating method |
| KR100478685B1 (en) * | 2001-05-25 | 2005-03-24 | 캐논 가부시끼가이샤 | Separating apparatus and processing method for plate member |
| US6872634B2 (en) * | 2002-06-11 | 2005-03-29 | Shinko Electric Industries Co., Ltd. | Method of manufacturing micro-semiconductor element |
| EP1308999A3 (en) * | 2001-06-29 | 2005-03-30 | Canon Kabushiki Kaisha | Method and apparatus for separating a member |
| US7579257B2 (en) * | 1998-11-06 | 2009-08-25 | Canon Kabuhsiki Kaisha | Sample separating apparatus and method, and substrate manufacturing method |
| CN102420269A (en) * | 2011-09-30 | 2012-04-18 | 无锡市南亚科技有限公司 | Dry-method silicon wafer automatic separation mechanism |
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-
1995
- 1995-06-22 JP JP7155719A patent/JPH098095A/en active Pending
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| EP1134790A3 (en) * | 1997-03-27 | 2001-12-19 | Canon Kabushiki Kaisha | Apparatus for separating a composite member using fluid jet |
| US6382292B1 (en) | 1997-03-27 | 2002-05-07 | Canon Kabushiki Kaisha | Method and apparatus for separating composite member using fluid |
| US6475323B1 (en) | 1997-03-27 | 2002-11-05 | Canon Kabushiki Kaisha | Method and apparatus for separating composite member using fluid |
| US6746559B2 (en) | 1997-03-27 | 2004-06-08 | Canon Kabushiki Kaisha | Method and apparatus for separating composite member using fluid |
| US6427747B1 (en) * | 1997-06-16 | 2002-08-06 | Canon Kabushiki Kaisha | Apparatus and method of separating sample and substrate fabrication method |
| KR100413146B1 (en) * | 1998-04-01 | 2003-12-31 | 캐논 가부시끼가이샤 | Member separating apparatus and member separating method |
| US7579257B2 (en) * | 1998-11-06 | 2009-08-25 | Canon Kabuhsiki Kaisha | Sample separating apparatus and method, and substrate manufacturing method |
| WO2002067295A1 (en) * | 2001-02-21 | 2002-08-29 | Pirmin Gerhard Muffler | Method and device for separating a semiconductor wafer from a carrier |
| EP1246228A1 (en) * | 2001-02-21 | 2002-10-02 | B.L.E. Laboratory Equipment GmbH | Method and apparatus for detaching a semiconductor wafer from a support member |
| KR100478685B1 (en) * | 2001-05-25 | 2005-03-24 | 캐논 가부시끼가이샤 | Separating apparatus and processing method for plate member |
| EP1308999A3 (en) * | 2001-06-29 | 2005-03-30 | Canon Kabushiki Kaisha | Method and apparatus for separating a member |
| US6872634B2 (en) * | 2002-06-11 | 2005-03-29 | Shinko Electric Industries Co., Ltd. | Method of manufacturing micro-semiconductor element |
| CN102420269A (en) * | 2011-09-30 | 2012-04-18 | 无锡市南亚科技有限公司 | Dry-method silicon wafer automatic separation mechanism |
| JP2013149706A (en) * | 2012-01-18 | 2013-08-01 | Nippon Steel & Sumikin Fine Technology Co Ltd | Wafer conveying device and wafer conveying method |
| JP2016519620A (en) * | 2013-04-03 | 2016-07-07 | サノフィ−アベンティス・ドイチュラント・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツング | Device and method for separating an article from stacked articles |
| CN104867855A (en) * | 2015-04-24 | 2015-08-26 | 浙江长兴汉能光伏有限公司 | Solar battery backboard removing and delivering apparatus |
| WO2021217290A1 (en) * | 2020-04-26 | 2021-11-04 | Abb Schweiz Ag | Apparatus and method for separating objects |
| US12077396B2 (en) | 2020-04-26 | 2024-09-03 | Abb Schweiz Ag | Apparatus and method for separating objects |
| JP2022049978A (en) * | 2020-09-17 | 2022-03-30 | 株式会社東芝 | Control device, control method, and cargo handling system |
| CN113078086A (en) * | 2021-02-08 | 2021-07-06 | 无锡奥特维科技股份有限公司 | Silicon wafer taking method |
| CN113078086B (en) * | 2021-02-08 | 2024-04-16 | 无锡奥特维科技股份有限公司 | A silicon wafer material extraction method |
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