JPH0954116A - High temperature probe card - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent such failure that a probe is not allowed to be in contact with an electrode pad with accurately due to expansion of a substrate caused by a high temperature measurement. SOLUTION: Relating to the high temperature measuring probe card measuring various electrical characteristics of an LSI chip 610, being an object to be measured, under the heated condition, a probe 100 in contact with an electrode pad 611 of the LSI chip 610 and a substrate 400 to which the probe 100 is attached are provided, and the substrate 400 consists of multiple ceramics plates 410 laminated together.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high temperature measurement probe card used for measuring various electrical characteristics of an LSI chip or the like as an object to be measured in a heated state.

[0002]

2. Description of the Related Art A conventional high temperature measurement probe card will be described with reference to FIG. The high temperature measurement of the LSI chip 610 is performed by the wafer mounting table 70 having the heater 710 built therein.
0, a wafer 600 having a plurality of LSI chips 610 formed thereon is placed, and the wafer 600 is placed at about 80 ° C. to 16 ° C.
It is performed using a probe card for high temperature measurement while being heated to about 0 ° C.

A conventional high-temperature measurement probe card used for high-temperature measurement has a printed circuit board 300 on which a wiring pattern 310 is formed, and a probe 100 attached to the printed circuit board 300. Printed circuit board 3
00 is often made of a glass epoxy resin or the like, and often has a multilayer structure in order to accommodate a large number of probes 100.

On the upper surface side of the printed circuit board 300, for example, connector terminals 3 connected to the wiring pattern 310 are provided.
20 are provided. Further, the printed circuit board 30
0, the rear end of the probe 100 and the wiring pattern 310
And a through-hole 210 for connecting the terminal to the terminal.

The probe 100 is attached to the printed circuit board 300 using a holding member 240 made of ceramics. The holding member 240 is attached to the back surface side of the printed circuit board 300, that is, the surface facing the wafer 600 on which the LSI chip 610 is formed. An inclined surface 241 is formed on the holding member 240, and the middle part of the probe 100 is attached to the inclined surface 241 using an epoxy resin 270 or the like. As described above, the rear end of the probe 100 is
The through hole 210 is used to connect to the wiring pattern 310, and eventually to the connector terminal 320.

The contact portion 11 which is the tip of the probe 100
0 is bent downward, and the LSI chip 61
The positioning is precisely performed so as to correspond to the position of the zero electrode pad 611.

[0007]

However, the above-mentioned conventional probe card for measuring high temperature has the following problems. That is, the radiant heat from the wafer mounting table on which the wafer is mounted is transmitted to the printed circuit board, the printed circuit board is deformed by thermal expansion, and as a result, the position of the contact portion of the probe is displaced. The displacement of the contact portion is
This makes it difficult to measure the accurate electrical characteristics of the chip.

The thermal expansion coefficient of a printed circuit board made of a glass epoxy resin is about 3.0 × 1 although it varies somewhat depending on the amount of glass fiber and the amount of epoxy resin blended.
0 ^-5 / ° C. On the other hand, the thermal expansion coefficient of the single crystal silicon wafer used for the LSI chip is 4.15 × 1.
It is 0 ^-6 / ° C. That is, the coefficient of thermal expansion of the printed circuit board is approximately 1 than the coefficient of thermal expansion of the single crystal silicon wafer.
It is an order of magnitude larger.

Here, it is assumed that a plurality of LSI chips can be measured at the same time while the LSI chips are heated to about 130 ° C., and a probe card for high temperature measurement having a probe length of 10 cm is used for the measurement. The PCB expands by about 30 μm due to thermal expansion. The electrode pad of the LSI chip is about 50 μm square, and the contact part of the probe is designed to contact the center of the electrode pad. Therefore, if the printed circuit board expands about 30 μm, the probe will not contact the electrode pad. You will not be able to contact them.

Therefore, in the high temperature measurement probe card used for high temperature measurement, the probe may be attached, that is, the contact portion of the probe may be positioned while the substrate is heated to the same temperature as the high temperature measurement. However, that is not possible in the present situation where the attachment of the probe has to rely on skilled personnel.

The present invention was made in view of the above circumstances, and an object thereof is to provide a probe card for high temperature measurement in which the problem that the probe does not accurately contact the electrode pad due to expansion of the substrate due to high temperature measurement does not occur. There is.

[0012]

A probe card for high-temperature measurement according to claim 1 is a probe card for high-temperature measurement in which various electrical characteristics are measured while a measurement target is heated. It is provided with a probe to be in contact with and a substrate to which the probe is attached, and the substrate is a stack of ceramic plates.

In the probe card for high temperature measurement according to claim 2, the ceramic plate used as the substrate is a green sheet.

Furthermore, in the probe card for high temperature measurement according to the third aspect, the wiring patterns are formed in advance on the ceramic plates, and the wiring patterns of the respective ceramic plates are mutually connected by the connecting means in a state where the respective ceramic plates are laminated. It is connected to the.

[0015]

1 is a schematic sectional view of a substrate used in a high temperature measurement probe card according to an embodiment of the present invention, and FIG. 2 is a high temperature measurement probe card according to an embodiment of the present invention. It is a schematic perspective view of the ceramic plate which comprises the board | substrate used. It is to be noted that parts and the like that are substantially the same as those of the related art are denoted by the same reference numerals and described.

This high temperature measurement probe card is a high temperature measurement probe card for measuring various electrical characteristics in a state where an LSI chip 610 which is an object to be measured is heated.
The probe 100 is in contact with the electrode pad 611 of the LSI chip 610 and the substrate 400 to which the probe 100 is attached. The substrate 400 is formed by laminating a plurality of ceramic plates 410.

The probe 100, the LSI chip 610, the electrode pad 611, etc. are the same as those described with reference to FIG. 3 in the section of the prior art, but their detailed description will be omitted.

The ceramic plate 410 has a thickness of 0.
This is a 3 mm alumina green sheet. This alumina green sheet is obtained by kneading alumina powder which is ceramics and a small amount of clay which is a binder, and kneading it with a resin such as polyvinyl butyral and an organic solvent such as alcohol or toluene. It is processed into a sheet. Since such an alumina green sheet is flexible at room temperature, it has a characteristic that it is very easy to process.

The ceramic plate 410, which is such an alumina green sheet, is processed into a predetermined shape having an opening 411, for example, as shown in FIG. 2, to form a predetermined wiring pattern 412. The wiring pattern 412 is formed of a thick film of silver palladium. Further, each ceramic plate 410 has another ceramic plate 410 to be stacked.
A through hole 413 or a via hole, which is a connecting means in consideration of connection with the wiring pattern 412, is formed.

A plurality of ceramic plates 410 having the above-mentioned structure are laminated in a predetermined order and pressed, and thereafter,
The substrate 400 is formed by drying and firing at about 1000 ° C. The substrate 400 obtained by stacking and firing the ceramic plates 410 is hard unlike the state of the alumina green sheet. Of course, when the ceramic plates 410 are stacked, the connection with the wiring patterns 412 of the upper and lower ceramic plates 410 is secured.

The openings 411 are formed in all the ceramic plates 410 in the same manner.
When 0 is stacked, it becomes an opening of the substrate 400. This opening is used when an ink mark or the like is attached to the defective LSI chip 610.

The holding member 240 is attached to the back surface side of the substrate 400 thus constructed, and the middle part of the probe 100 is attached to the holding member 240 with the resin 270.

Further, connector terminals 320 connected to the wiring pattern 412 on the upper surface of the substrate 400 (see FIG. 3).
Attach. Further, the rear end of the probe 100 is connected to the through hole 413 or the wiring pattern 412 formed in the lowermost ceramics plate 410 to complete the high temperature measurement probe card.

For example, in a high temperature measurement probe card using a substrate 400 in which ten ceramic plates 410 made of alumina green sheets are laminated, an experiment using a high temperature measurement probe card capable of simultaneously measuring 16 LSI chips 610 is performed. The results will be described.

The thermal expansion coefficient of this substrate 400 is 6.0 × 1.
It is 0 ⁻⁶ / ° C., which is very close to the thermal expansion coefficient of 4.15 × 10 ⁻⁶ / ° C. of the single crystal silicon wafer.

This high temperature measurement probe card has 8 pieces ×
It is possible to measure 16 LSI chips 610 in two rows at the same time, and 656 probes 100 are used. Among such probes 100, the distance between the furthest probes 100 is 126 mm.

In this high temperature measurement probe card, the contact portion 110 of each probe 100 is positioned at room temperature. That is, each probe 100 is arranged so that the contact portion 110 of each probe 100 contacts the center of each electrode pad 611 of each LSI chip 610 at room temperature.
Of the substrate 400 relative to the substrate 400.

When the electrical characteristics of the LSI chip 610 contained in the wafer 600 heated to 125 ° C. are measured by such a high temperature measurement probe card, the substrate 4
00 undergoes thermal expansion, so the contact portion 11 of each probe 100
Although 0 deviates from the initially set position (center of the electrode pad 611), its thermal expansion coefficient is extremely close to that of the single crystal silicon wafer as described above, and therefore the deviation is within 2 μm even at the maximum. It was confirmed by experiments that there is.

That is, the substrate 400 also expands when heated, but the wafer 600 also expands when heated. Here, since the thermal expansion coefficient of the wafer 600 (single crystal silicon wafer) is extremely close to the thermal expansion coefficient of the substrate 400, the degree of relative expansion of the substrate 400 with respect to the wafer 600 becomes small, and the contact portion 110 of the probe 100 is less likely to expand. The displacement with respect to the electrode pad 611 is reduced.

Since the electrode pad 611 has a size of about 50 μm square, the positional displacement of the contact portion 110 of the probe 100 due to the thermal expansion of the substrate 400 does not pose any problem in practical use.

The model number MLS of Nippon Electric Glass Co., Ltd.
A substrate 400 was formed by laminating 14 powdery glassy green sheets with a thickness of -1000 of about 0.2 mm as a ceramic plate 410. The thermal expansion coefficient of this substrate 400 is 4.5 × 10 ⁻⁶ / ° C., and the thermal expansion coefficient of the single crystal silicon wafer is very close to 6.0 × 10 ⁻⁶ / ° C. Therefore, even in the probe card for high temperature measurement using the substrate 400 configured by laminating the powdery glassy green sheets as the ceramic plate 410, the probe card of each probe 100 is almost the same as the one using the alumina green sheet as the ceramic plate 410. It can be seen that the displacement of the contact portion 110 does not cause any problem in practical use.

The powdery glassy green sheet refers to one in which glass powder is used instead of the alumina powder in the above-mentioned alumina green sheet.

[0033]

EFFECT OF THE INVENTION The probe card for high temperature measurement according to claim 1 is a probe card for high temperature measurement which measures various electrical characteristics in a state in which the measurement target is heated, and contacts the electrode pad of the measurement target. The probe includes a probe and a substrate to which the probe is attached. The substrate is formed by laminating ceramic plates.

Since a substrate made of ceramics has a thermal expansion coefficient closer to that of a single crystal silicon wafer forming an LSI chip as an object to be measured, a thermal expansion coefficient of the substrate made of ceramics is more than that of a conventional printed circuit board made of glass epoxy resin. The resulting displacement of the contact portion of the probe with respect to the electrode pad can be made significantly smaller than the conventional one.

Therefore, in this high temperature measurement probe card, even if the contact portion of each probe is positioned at room temperature,
Since the contact portion of the probe surely contacts the electrode pad of the LSI chip, the manufacturing process similar to that of a normal probe card, that is, the manufacturing at normal temperature becomes possible.

In the probe card for high temperature measurement according to claim 2, the ceramic plate used as the substrate is a green sheet. As described above, this green sheet is flexible at room temperature, and thus is very easy to process. Therefore, it is easy to form the substrate according to the object to be measured, and the substrate can be easily formed. Moreover, this green sheet can be obtained by properly selecting powdered alumina or powdered glass, which is a mixed ceramic, as LS.
A substrate having a coefficient of thermal expansion extremely close to that of the single crystal silicon wafer used for the I chip can be used.

Further, in the probe card for high temperature measurement according to the third aspect, the wiring patterns are formed in advance on the ceramic plates, and the wiring patterns of the respective ceramic plates are mutually connected by the connecting means in a state where the respective ceramic plates are laminated. It is connected to the. Therefore, a larger number of probes can be dealt with as needed. That is, it becomes possible to provide a high temperature measurement probe card capable of simultaneously measuring a larger number of measurement objects.

As in the prior art, a substrate having a multi-layer structure made of glass epoxy resin or the like requires an adhesive agent or the like for closely adhering the plates constituting each layer to each other, and the thermal expansion coefficient of this adhesive agent or the like is required. Although it was necessary to take into consideration, in this probe card for high temperature measurement, since the substrate is constructed by stacking and firing ceramic plates made of green sheets, the conventional adhesives are unnecessary, It is not necessary to consider the thermal expansion coefficient of the adhesive or the like, and the design becomes easier.

[Brief description of drawings]

FIG. 1 is a schematic cross-sectional view of a substrate used in a high temperature measurement probe card according to an embodiment of the present invention.

FIG. 2 is a schematic perspective view of a ceramic plate that constitutes a substrate used in the probe card for high temperature measurement according to the embodiment of the present invention.

FIG. 3 is a schematic sectional view of a conventional high-temperature measurement probe card.

[Explanation of symbols]

 100 probe 400 substrate 410 ceramic plate 610 LSI chip (measurement target) 611 electrode pad

 ─────────────────────────────────────────────────── ─── Continued front page (72) Inventor Hiroshi Iwata 2-5-13 Nishi-Nagasu-cho, Amagasaki-shi, Hyogo Nihon Electronic Materials Co., Ltd. (72) Inventor Kazumasa Okubo 2-chome, Nishi-Nagasu-cho, Amagasaki-shi, Hyogo 5th-13th Japan Electronics Materials Co., Ltd.

Claims (3)

[Claims] 1. A high-temperature measurement probe card for measuring various electrical characteristics in a state where a measurement target is heated, comprising: a probe in contact with an electrode pad of the measurement target; and a substrate on which the probe is mounted. The probe card for high temperature measurement, wherein the substrate is formed by laminating ceramic plates. 2. The probe card for high temperature measurement according to claim 2, wherein the ceramic plate used as the substrate is a green sheet. 3. A wiring pattern is formed on the ceramic plate in advance, and the wiring patterns of the ceramic plates are connected to each other by connecting means in a state where the ceramic plates are stacked. Item 3. The probe card for high temperature measurement according to item 1 or 2.