JPH0950981A - Etching apparatus and etching method - Google Patents

Abstract

(57) Abstract: In wet etching of a metal layer on a substrate surface, in-plane uniformity is improved and residue is prevented from being generated. SOLUTION: The etching apparatus is provided with a chuck 11 that holds and rotates a substrate 1 and a high frequency nozzle 12 that swings above the substrate 1, and the substrate 1 is rotated and the high frequency nozzle 12 is used.
Etching liquid 2 to which high-frequency vibration is applied while being swung above substrate 1 is discharged perpendicularly to substrate 1 for etching.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an etching apparatus and etching method, and more particularly to an apparatus and method for wet etching when a metal layer on the surface of a ceramic substrate is patterned to form a wiring pattern.

[0002]

2. Description of the Related Art An example of a conventional etching apparatus and etching method will be described with reference to FIG. FIG. 6 is a schematic view showing an embodiment of a conventional technique, and shows a main part of an example of a conventional etching apparatus. In the figure, reference numeral 42 denotes a nozzle, and other elements that are the same as those in FIG. 1 are given the same reference numerals.

The nozzle 42 discharges the etching liquid 2 supplied from the liquid supply means 14 from diagonally above toward the central portion of the substrate 1 rotating with the chuck 11. In the case of an apparatus having a plurality of nozzles 42, different etching liquids and rinse liquids (pure water) are ejected.

[0004]

However, according to such a conventional technique, there is a difference in the etching rate depending on the site on the substrate due to the nonuniform flow rate of the etching solution on the substrate. There is a problem that if the wiring width of the portion where the etching rate is slow is made to be the designed value, overetching occurs in the portion where the etching rate is fast and the wiring width becomes narrower than the designed value. There is also a problem that an etching residue is likely to occur in the lowermost layer, and that the processing time needs to be extended to prevent this.

SUMMARY OF THE INVENTION It is an object of the present invention to solve the above problems and to provide an etching apparatus and an etching method capable of improving the in-plane uniformity of etching and preventing the generation of residues without extending the processing time. And

[0006]

According to the present invention, there is provided a chuck for holding and rotating a substrate, and a nozzle for discharging an etching liquid toward the substrate on the chuck. A high-frequency nozzle equipped with a high-frequency oscillator, and an etching apparatus characterized by ejecting an etching liquid perpendicularly to the substrate while swinging above the substrate, wherein the substrate is rotated. Further, the etching method is characterized in that the etching liquid, to which the high frequency vibration is applied, is discharged perpendicularly to the substrate while the high frequency nozzle is swung above the substrate.

Further, according to the present invention, this object has a chuck for holding and rotating a substrate, and a nozzle for discharging an etching liquid toward the substrate on the chuck, the nozzle having a brush. An etching apparatus comprising: a brush-integrated nozzle, which discharges an etching liquid perpendicularly to the substrate while swinging above the substrate, and a brush scrubs the substrate. And an scrubbing of the substrate while at the same time discharging the etching liquid perpendicular to the substrate while rotating the brush-integrated nozzle above the substrate and achieving the etching method. To be done.

Further, according to the present invention, the object further comprises a transfer means for transferring the substrate, and a nozzle for discharging the etching liquid toward the substrate on the transfer means, the nozzle including a high frequency oscillator. A high-frequency nozzle, and an etching device characterized by ejecting an etching liquid perpendicularly to the substrate while swinging above the substrate, while transferring the substrate by the transfer means, This is achieved by an etching method characterized in that the high-frequency nozzle is swung above the substrate, and the etching liquid to which the high-frequency vibration is applied is discharged perpendicularly to the substrate.

In any of the above cases, since the nozzle is swung on the substrate, the distribution of the flow rate of the etching solution on the substrate periodically fluctuates, and the flow velocity at the central portion periodically increases, so that the in-plane Uniformity is improved. Further, when a high frequency nozzle is used, since the etching liquid accompanied by high frequency vibration is vertically applied to the substrate, the etching progresses efficiently and a residue is less likely to be generated. Further, when the brush-integrated nozzle is used, the residue is removed early by scrubbing with the brush.

[0010]

BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of the present invention will be described with reference to FIGS. First embodiment. FIG. 1 is a side view showing the first embodiment of the present invention, and FIG. 2 is a plan view showing the first embodiment of the present invention. In both figures, 1 is a substrate to be processed, 2 is an etching solution, 11 is a chuck, and 12 is a chuck.
Is a high frequency nozzle, 13 is an oscillator, 14 is a liquid supply means, 1
Reference numeral 5 is a vertical axis, and 16 is a swing arm.

The substrate 1 is a ceramic substrate having a metal layer on its surface, which is used in, for example, an MCM (multi-chip module) or an LSI package. The chuck 11 holds the substrate 1 and is rotated by a motor (not shown). The high frequency nozzle 12 includes a high frequency oscillator (not shown), and applies high frequency vibration to the etching liquid 2. This high frequency oscillator is connected to an oscillator 13 which generates a high frequency of about 0.8 to 2 MHz. The liquid supply means 14 is composed of a pressure regulator, a tank, an opening / closing valve, a pipe, etc., and supplies the etching liquid 2 to the high-frequency nozzle 12. The vertical shaft 15 is rotated by a rotating mechanism (not shown), and the high frequency nozzle 12 is swung via a swing arm 16.

While rotating the chuck 11 holding the substrate 1 and oscillating the high frequency nozzle 12 above the substrate 1, the etching liquid 2 accompanied by the high frequency vibration is discharged vertically to the substrate 1 and rotated. The metal layer on the surface of the substrate 1 is etched.

FIG. 2 shows a device with four high-frequency nozzles 12. Four high frequency nozzles of this device 1
Although not shown in FIG. 2, the oscillator 13 and the liquid supply unit 1 are individually provided.
4 are connected. Therefore, if the etching liquids 2 (one of which is a rinse liquid, that is, pure water) different from each other are sequentially supplied to the four high-frequency nozzles 12 of this apparatus, the metal is multi-layered. Even in the case of a structure, it can be etched efficiently. The number of high frequency nozzles 12 is not limited to four.

Next, an example in which the metal of the ceramic substrate is etched using this apparatus will be described. Board size
40 × 40mm, metal (Ti (1.0 μm) / Ni (1.0 μm) double layer structure, Ni etchant is HNO ₃ 33%, H ₂ O ₂ 33%, H ₂ O
33%, Ti etchant was HNO ₃ 90%, HF 10%, discharge pressure of etchant was 1.0 kgf / cm ² , and high frequency vibration was 1.5 MHz. As a result, when the wiring width in the central portion of the substrate was just etched to 40 μm, the wiring width in the peripheral portion of the substrate was 38 μm.
The etching time at this time was 35 seconds for Ni and 15 seconds for Ti.

For comparison, as a result of performing the same etching as above using the above-described conventional apparatus and method, the wiring width at the peripheral portion of the substrate when the wiring width at the central portion of the substrate is just etched to 40 μm The etching time was 35 μm, and the etching time at this time was 40 seconds for Ni and 20 seconds for Ti. Therefore, according to the present invention, the etching uniformity is improved, and
Processing time is also shortened.

Second embodiment. FIG. 3 is a nozzle cross-sectional view showing a second embodiment of the present invention. This nozzle is a brush-integrated nozzle 22, which has a plurality of discharge ports 22a on its end face like a shower nozzle, and is further provided with a brush 22b. The brush-integrated nozzle 22 is replaced with the high-frequency nozzle 12 shown in FIG.

While rotating the chuck 11 holding the substrate 1 and swinging the brush-integrated nozzle 22 above the substrate 1, the etching liquid 2 is ejected perpendicularly to the substrate 1 from a plurality of ejection ports 22a. Etching while scrubbing the metal layer on the surface of the rotating substrate 1.

Using this apparatus, etching was performed under the same conditions as those in the example of the first embodiment (however, without high-frequency vibration), and as a result, the etching was performed until the wiring width at the central portion of the substrate reached just etching 40 μm. When the wiring width of the peripheral area of the substrate is 38 μm, the etching time at this time is
Ni was 38 seconds and Ti was 16 seconds, and almost the same result as the example in the first embodiment was obtained.

Third embodiment. FIG. 4 is a schematic view showing a third embodiment of the present invention, (A) is a side view and (B) is a front view. In the figure, 31 is a transfer means,
In addition, the same reference numerals are given to the same components as those in FIG. The transfer means 31 transfers the substrate 1 in one direction at a constant speed. A plurality of high-frequency nozzles 12 are arranged above the transfer means 31 at predetermined intervals, and sequentially oscillate in a direction perpendicular to the traveling direction of the substrate 1 while generating high-frequency vibrations in a direction perpendicular to the substrate 1. The accompanying etching liquid 2 is discharged.

Liquid supply means 14 are individually connected to the plurality of high frequency nozzles 12. For example, the first and second nozzles are the first etching liquid, and the third nozzle is the rinse liquid (pure water). The fourth nozzle discharges the second etching liquid, the fifth and sixth nozzles discharge the rinse liquid (pure water), and so on. Further, by disposing a gas nozzle and blowing the dry gas at the end of the process to dry the substrate 1, the processing is completed only by this apparatus.
If there is a pin on the back side of the substrate 1, the substrate 1 is housed in a dedicated jig and mounted on the transfer means 31.

Using this apparatus, under the same conditions as in the example of the first embodiment (however, the substrate 1 is not rotated).
As a result of etching, the wiring width in the peripheral area of the substrate is 39 μm when the wiring width in the central portion of the substrate is just etching 40 μm.The etching time at this time is 38 seconds for Ni and 18 seconds for Ti. there were.

The present invention is not limited to the above embodiments, but can be implemented with various modifications.

[0023]

As described above, according to the present invention,
It is possible to provide an etching apparatus and an etching method capable of improving the in-plane uniformity of etching and preventing the generation of residues without extending the processing time.

[Brief description of drawings]

FIG. 1 is a side view showing a first embodiment of the present invention.

FIG. 2 is a plan view showing a first embodiment of the present invention.

FIG. 3 is a nozzle cross-sectional view showing a second embodiment of the present invention.

FIG. 4 is a schematic diagram showing a third embodiment of the present invention.

FIG. 5 is a schematic view showing one form of conventional technology.

[Explanation of symbols]

 1 Substrate 2 Etching Liquid 11 Chuck 12 High Frequency Nozzle 13 Oscillator 14 Liquid Supply Means 15 Vertical Axis 16 Swing Arm 22 Brush Integrated Nozzle 31 Transfer Means 42 Nozzles

Claims (6)

[Claims] 1. A chuck that holds and rotates a substrate, and a nozzle that discharges an etching liquid toward the substrate on the chuck, the nozzle being a high-frequency nozzle equipped with a high-frequency oscillator,
Further, the etching apparatus is characterized in that the etching liquid is ejected vertically to the substrate while swinging above the substrate. 2. A chuck that holds and rotates a substrate, and a nozzle that discharges an etching solution toward the substrate on the chuck, the nozzle being a brush-integrated nozzle having a brush,
Moreover, the etching apparatus is characterized in that the etching liquid is ejected perpendicularly to the substrate while swinging above the substrate, and the brush scrubs the substrate. 3. A transfer means for transferring a substrate, and a nozzle for ejecting an etching solution toward the substrate on the transfer means, the nozzle being a high frequency nozzle equipped with a high frequency oscillator,
Further, the etching apparatus is characterized in that the etching liquid is ejected vertically to the substrate while swinging above the substrate. 4. The etching apparatus according to claim 1, wherein the substrate is rotated, and the etching liquid subjected to high-frequency vibration while swinging the high-frequency nozzle above the substrate is perpendicular to the substrate. An etching method characterized by discharging. 5. The etching apparatus according to claim 2, wherein the substrate is rotated, and the etching liquid is ejected perpendicularly to the substrate while the brush-integrated nozzle is swung above the substrate. An etching method comprising scrubbing the substrate. 6. The etching apparatus according to claim 3, wherein an etching liquid is applied to the substrate while the substrate is being transferred by the transfer means while the high frequency nozzle is being swung above the substrate while being subjected to high frequency vibration. An etching method characterized in that the liquid is discharged vertically.