JPH093635A - Sputtering target material and its production - Google Patents
Sputtering target material and its productionInfo
- Publication number
- JPH093635A JPH093635A JP15354695A JP15354695A JPH093635A JP H093635 A JPH093635 A JP H093635A JP 15354695 A JP15354695 A JP 15354695A JP 15354695 A JP15354695 A JP 15354695A JP H093635 A JPH093635 A JP H093635A
- Authority
- JP
- Japan
- Prior art keywords
- target material
- molybdenum
- tungsten
- relative density
- sputter target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013077 target material Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 238000005477 sputtering target Methods 0.000 title abstract 5
- 238000005096 rolling process Methods 0.000 claims abstract description 17
- MGRWKWACZDFZJT-UHFFFAOYSA-N molybdenum tungsten Chemical compound [Mo].[W] MGRWKWACZDFZJT-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000005245 sintering Methods 0.000 claims abstract description 16
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 13
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910001080 W alloy Inorganic materials 0.000 claims abstract description 12
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 11
- 239000010937 tungsten Substances 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 10
- 239000011733 molybdenum Substances 0.000 claims abstract description 10
- 238000005242 forging Methods 0.000 claims abstract description 6
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 4
- 239000000956 alloy Substances 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims abstract description 4
- 238000004544 sputter deposition Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000005098 hot rolling Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- VNTLIPZTSJSULJ-UHFFFAOYSA-N chromium molybdenum Chemical compound [Cr].[Mo] VNTLIPZTSJSULJ-UHFFFAOYSA-N 0.000 description 1
- 238000001513 hot isostatic pressing Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000002706 hydrostatic effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- JZLMRQMUNCKZTP-UHFFFAOYSA-N molybdenum tantalum Chemical compound [Mo].[Ta] JZLMRQMUNCKZTP-UHFFFAOYSA-N 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Powder Metallurgy (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は，スパッターターゲット
材とその製造方法に関し，詳しくは，フラットディスプ
レイの製造に用いるモリブデン−タングステン合金から
なるスパッターターゲット材とその製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a sputter target material and a method for manufacturing the same, and more particularly to a sputter target material made of a molybdenum-tungsten alloy used for manufacturing a flat display and a method for manufacturing the same.
【０００２】[0002]
【従来の技術】近年，液晶ディスプレイ（ＩＣＤ）を中
心としたフラット・ディスプレイの生産が急激に増加し
ている。それに伴って，ディスプレイに用いられる透明
導電膜及びゲート・ソースドレインの金属配線膜の需要
も増加している。また，それに要求される品質特性も年
々高品質化・高性能化している。2. Description of the Related Art In recent years, the production of flat displays centering on liquid crystal displays (ICD) has been rapidly increasing. Along with this, the demand for transparent conductive films used for displays and metal wiring films for gate / source / drain is also increasing. In addition, the quality characteristics required for them are increasing year by year.
【０００３】フラット・ディスプレイに使用されるスパ
ッター材の材質には，タンタル（Ｔａ），クロム（Ｃ
ｒ），アルミニウム（Ａｌ），Ｎｄ（ニオブ），インジ
ウム・スズ酸化膜（ＩＴＯ），クロム−モリブデン（Ｃ
ｒ−Ｍｏ），タンタル−モリブデン（Ｔａ−Ｍｏ）等が
ある。近年は，この中でもモリブデン−タングスタン
（Ｍｏ−Ｗ）合金が検討され，スパッターターゲットと
して使用されている。The sputter materials used for flat displays include tantalum (Ta) and chromium (C).
r), aluminum (Al), Nd (niobium), indium tin oxide film (ITO), chromium-molybdenum (C)
r-Mo), tantalum-molybdenum (Ta-Mo), and the like. In recent years, molybdenum-Tungstan (Mo-W) alloy has been studied and used as a sputter target.
【０００４】モリブデン−タングステン合金は，製造上
鍛造・圧延等の加工性が非常に悪い為，熱間等方圧プレ
ス（ＨＩＰ），静水圧プレス（ＣＩＰ），又はホットプ
レス等で成形した後，高温熱処理だけを行った物，ある
いは，それを熱間で２０％未満の低加工しただけの物
で，８０〜９４．７％の相対密度を有するターゲットが
一般的に使用されていた。Since the molybdenum-tungsten alloy has a very poor workability in forging and rolling in manufacturing, it is formed by hot isostatic pressing (HIP), isostatic pressing (CIP), hot pressing, or the like. A target having a relative density of 80 to 94.7% is generally used, which has been subjected to only a high temperature heat treatment or has been subjected to a low work of less than 20% by hot working.
【０００５】[0005]
【発明が解決しようとする課題】近年，スパッターター
ゲットの特性としては，低抵抗及び低パーティクル化が
望まれているが，上記した様に従来の製法で製造された
モリブデン−タングステン合金は，相対密度が８０〜９
４．７％で，内部にポアが存在する。ここで，ターゲッ
ト材の相対密度は，明らかに放電特性に影響を及ぼし，
相対密度が８０〜９４．７％の場合，スパッターした際
の成膜に，パーティクル（異物）の発生頻度が高くな
る。また，ターゲット電圧も高電圧が必要となり，成膜
の比抵抗も大きくなる。これらの理由で，従来，前述の
ターゲットを用いて製造されるフラット・ディスプレイ
の製品歩留を悪化させる問題があった。In recent years, as the characteristics of the sputter target, low resistance and low particles have been desired. However, as described above, the molybdenum-tungsten alloy produced by the conventional production method has a relative density. Is 80-9
At 4.7%, there are pores inside. Here, the relative density of the target material obviously affects the discharge characteristics,
When the relative density is 80 to 94.7%, the frequency of generation of particles (foreign matter) becomes high in the film formation during sputtering. In addition, a high target voltage is required, and the specific resistance of film formation increases. For these reasons, conventionally, there has been a problem that the product yield of flat displays manufactured using the above-mentioned target is deteriorated.
【０００６】そこで，本発明の技術的課題は，フラット
・ディスプレイに使用されるスパッターターゲットの材
質をモリブデン−タングステン合金において，高密度で
且つ寿命の長いスパッターターゲット材とその製造方法
とを提供することにある。Therefore, a technical object of the present invention is to provide a sputter target material having a high density and a long life, and a method for manufacturing the sputter target material, in which a molybdenum-tungsten alloy is used as a material of a sputter target used for a flat display. It is in.
【０００７】[0007]
【課題を解決するための手段】前述したように，モリブ
デン−タングステン合金は，非常に鍛造，圧延等の加工
性が悪く，一般的にはほとんど加工できないものと考え
られていた。しかし，本発明では，モリブデン中に重量
パーセントで３０〜７０％のタングステンを含む焼結体
に加工率２０〜８０％の熱間圧延加工を実施した結果，
スパッターターゲット用素材の相対密度を９６％以上に
することができたものである。As described above, the molybdenum-tungsten alloy is extremely poor in workability such as forging and rolling, and is generally considered to be hardly workable. However, in the present invention, as a result of performing hot rolling with a working rate of 20 to 80% on a sintered body containing 30 to 70% by weight of tungsten in molybdenum,
The relative density of the sputter target material could be 96% or more.
【０００８】本発明によれば，重量パーセントで３０〜
７０ｗｔ％のタングステンと残部が実質的にモリブデン
からなるモリブデン−タングステン合金からなり，前記
合金は，９６％〜９９．９％の相対密度を有することを
特徴とするスパッターターゲット材が得られる。According to the invention, a weight percentage of 30 to
A sputter target material is obtained which is made of a molybdenum-tungsten alloy having 70 wt% tungsten and the balance substantially molybdenum, and the alloy has a relative density of 96% to 99.9%.
【０００９】また，本発明によれば，予め定められたモ
リブデン及びタングステンを含み，比較的低い第１の相
対密度を備えた焼結体を用意し，当該焼結体に所定の加
工を施すことによって，前記第１の相対密度よりも高い
第２の相対密度のターゲット材を得ることを特徴とする
スパッターターゲット材の製造方法が得られる。Further, according to the present invention, a sintered body containing predetermined molybdenum and tungsten and having a relatively low first relative density is prepared, and the sintered body is subjected to predetermined processing. Thus, a method of manufacturing a sputter target material, characterized in that a target material having a second relative density higher than the first relative density is obtained.
【００１０】ここで，本発明のスパッターターゲット材
の製造方法において，前記所定の加工は，圧延及び鍛造
の内の少なくとも一種であることが好ましい。Here, in the method for producing a sputter target material of the present invention, it is preferable that the predetermined processing is at least one of rolling and forging.
【００１１】また，本発明のスパッターターゲット材の
製造方法において，前記第１の相対密度は，９３％〜９
４．５％の範囲内であることが好ましい。In the method for producing a sputter target material of the present invention, the first relative density is 93% to 9%.
It is preferably in the range of 4.5%.
【００１２】また，本発明のスパッターターゲット材の
製造方法において，前記第２の相対密度は，９６％〜９
９．９％の範囲内であることが好ましい。In the method for producing a sputter target material according to the present invention, the second relative density is 96% -9%.
It is preferably in the range of 9.9%.
【００１３】また，本発明のスパッターターゲット材の
製造方法において，前記第１の相対密度を備えた焼結体
は，重量パーセントで３０〜７０ｗｔ％のタングステン
と残部としてモリブデンとを含むモリブデン−タングス
テン粉末を予め定められたプレス圧力によるプレス成
形，及び予め定められた焼結条件による焼結の組み合わ
せにより製造されていることが好ましい。In the method for producing a sputter target material according to the present invention, the sintered body having the first relative density is a molybdenum-tungsten powder containing 30 to 70 wt% of tungsten by weight and molybdenum as the balance. Is preferably produced by a combination of press molding under a predetermined press pressure and sintering under a predetermined sintering condition.
【００１４】また，本発明のスパッターターゲット材の
製造方法において，前記所定加工は，前記焼結体を加熱
温度１４００〜１６００℃において加熱しながら行われ
ることが好ましい。In the method for producing a sputter target material according to the present invention, it is preferable that the predetermined processing is performed while heating the sintered body at a heating temperature of 1400 to 1600 ° C.
【００１５】さらに，本発明のスパッターターゲット材
の製造方法において，前記プレス成形は，少なくともプ
レス圧力が２００ＭＰａで行われ，前記焼結は１８００
℃〜２０００℃で行われることが好ましい。Further, in the method for producing a sputter target material according to the present invention, the press forming is performed at a press pressure of at least 200 MPa, and the sintering is 1800.
It is preferable to carry out at a temperature of from 2000 to 2000 ° C.
【００１６】即ち，本発明では，最適焼結条件及び圧延
条件を確立することで焼結体の第１の相対密度を９３〜
９４．５％にし，比較的容易に２０％以上の加工率が可
能となり，加熱温度１４００〜１６００℃で圧延又は鍛
造することにより，モリブデン−タングステンのすべて
の比率での加工が可能となり，その結果，第２の相対密
度が９６％以上のモリブデン−タングステン合金が得ら
れた。このように，圧延等の加工後の相対密度を９６％
以上にすることで，このモリブデン−タングステン合金
のターゲット材を用いてスパッターした際の成膜にパー
ティクルの発生頻度が従来品に比べ著しく低下させるこ
とができた。また，ターゲット電圧も当然低くなり成膜
の比抵抗も小さくなる。That is, according to the present invention, the first relative density of the sintered body is set to 93 ~ by establishing optimum sintering conditions and rolling conditions.
With 94.5%, a processing rate of 20% or more is possible with relative ease, and by rolling or forging at a heating temperature of 1400 to 1600 ° C, processing at all molybdenum-tungsten ratios is possible. , A second molybdenum-tungsten alloy having a relative density of 96% or more was obtained. Thus, the relative density after processing such as rolling is 96%.
By the above, the generation frequency of particles in the film formation when sputtering was performed using this molybdenum-tungsten alloy target material was able to be significantly reduced compared to the conventional product. In addition, the target voltage is naturally low and the specific resistance of film formation is low.
【００１７】従って，本発明により，フラット・ディス
プレイの製品歩留を向上することができる。Therefore, according to the present invention, the product yield of the flat display can be improved.
【００１８】[0018]
【実施例】以下，本発明の実施例に係るスパッターター
ゲット材の製造を示す。EXAMPLES The production of sputter target materials according to examples of the present invention will be described below.
【００１９】（実施例１）まず，モリブデン粉末とタン
グステン粉末を準備しモリブデン粉末中に重量パーセン
トで５０％のタングステン粉末を混合した。Example 1 First, molybdenum powder and tungsten powder were prepared, and 50% by weight of tungsten powder was mixed in the molybdenum powder.
【００２０】この混合した粉末をＣＩＰ（静水圧プレ
ス）での圧力条件と焼結条件を変え，焼結体を得た。Ｃ
ＩＰ圧力条件と焼結条件は下記（ａ），及び（ｂ）の通
りである。（ａ）ＣＩＰ圧力条件；９８，１９６，２９
４ＭＰａの３種類，（ｂ）焼結条件；１８００℃×１０
時間，１８００℃×３０時間（Ｈ2 雰囲気），２０００
℃×１０時間，２０００℃×３０時間（真空雰囲気）の
４種類。The mixed powder was changed in pressure condition and sintering condition in CIP (hydrostatic pressure press) to obtain a sintered body. C
The IP pressure condition and the sintering condition are as follows (a) and (b). (A) CIP pressure condition; 98, 196, 29
3 kinds of 4 MPa, (b) sintering conditions; 1800 ° C x 10
Hour, 1800 ° C x 30 hours (H 2 atmosphere), 2000
4 types of ℃ × 10 hours, 2000 ℃ × 30 hours (vacuum atmosphere).
【００２１】図１は，上記各条件で焼結した焼結体の焼
結体密度を示す図である。図示のように，焼結時間が長
い程，また，焼結温度が高い程，相対密度が増加するこ
とが分かる。FIG. 1 is a diagram showing a sintered body density of a sintered body sintered under the above respective conditions. As shown in the figure, it can be seen that the relative density increases as the sintering time becomes longer and the sintering temperature becomes higher.
【００２２】次に，得られた焼結体を加工条件を変え，
熱間圧延加工を実施し，圧延加工性を調査した。下記に
圧延加工条件（ｃ）を示す。（ｃ）加熱温度条件；１２
００，１４００，１６００，１８００℃の４種類。Next, by changing the processing conditions of the obtained sintered body,
Hot rolling was carried out and rolling workability was investigated. The rolling processing conditions (c) are shown below. (C) Heating temperature condition: 12
Four kinds of 00, 1400, 1600, 1800 ℃.
【００２３】下記表１〜３は，諸条件（ｃ）における圧
延加工性を示している。Tables 1 to 3 below show rolling workability under various conditions (c).
【００２４】[0024]
【表１】 [Table 1]
【００２５】[0025]
【表２】 [Table 2]
【００２６】[0026]
【表３】 [Table 3]
【００２７】上記表１〜３から明らかな様にプレス圧力
を１９６ＭＰａまたは２９４ＭＰａでプレスし，１８０
０℃×３０時間で焼結した焼結体を加熱温度１４００〜
１６００℃で圧延した場合，加工率８０％まで割れ及び
表面クラックの少ない圧延材が製造できた。しかし，上
記条件以外または加工率９０％以上の場合は，大きな割
れや表面クラックが発生し，圧延加工は不可能であっ
た。As is apparent from Tables 1 to 3 above, the press pressure was 196 MPa or 294 MPa, and 180
The sintered body sintered at 0 ° C. for 30 hours is heated at a heating temperature of 1400 to
When rolled at 1600 ° C, a rolled material with less cracks and surface cracks could be manufactured up to a working rate of 80%. However, under the conditions other than the above or when the working rate was 90% or more, large cracks and surface cracks occurred and rolling was impossible.
【００２８】つまり，圧延加工性は，焼結体の相対密度
と圧延加熱温度により可否が決定され，焼結体の相対密
度が９３〜９４．５％圧延加熱温度が１４００〜１６０
０℃の場合においてのみ容易に圧延加工できる。That is, the rolling workability is determined by the relative density of the sintered body and the rolling heating temperature. The relative density of the sintered body is 93 to 94.5%, and the rolling heating temperature is 1400 to 160.
It can be easily rolled only at 0 ° C.
【００２９】（実施例２）また，モリブデン粉末中に重
量パーセントで３０，４０，５０，６０，７０（％）の
タングテン粉末を入れ，混合し，実施例１で圧延可能だ
った条件で圧延加工を行なった。タングステンを４０ｗ
ｔ％以上を含むモリブデン−タングステン合金の場合，
若干加工性が悪くなったが，実施例１に示した方法にお
ける加熱時間を長くすることで遅延可能となった。(Example 2) In addition, molybdenum powder was added with a weight percent of 30, 40, 50, 60, 70 (%) of tangten powder, mixed, and rolled under the conditions in which rolling was possible in Example 1. Was done. 40w tungsten
In the case of molybdenum-tungsten alloy containing t% or more,
Although the workability was slightly deteriorated, it was possible to delay by increasing the heating time in the method shown in Example 1.
【００３０】（実施例３）図２は表面クラックや割れが
発生しない条件（モリブデン：タングステン＝５０：５
０，プレス圧力２９４ＭＰａ，焼結温度１８００℃×３
０時間 Ｈ2 雰囲気，加工温度１６００℃）で，圧延加
工した場合の加工率２０〜８０％の相対密度を測定した
結果を示す図である。(Embodiment 3) FIG. 2 shows the conditions under which surface cracks and cracks do not occur (molybdenum: tungsten = 50: 5).
0, press pressure 294 MPa, sintering temperature 1800 ° C x 3
0 hours an H 2 atmosphere, processed at a temperature of 1600 ° C.), a diagram showing the result of measuring the relative density of the working ratio 20% to 80% in the case of rolling.
【００３１】また，図３は，上記条件で製造した加工率
３０，５０，８０％の圧延材をスパッターターゲットに
加工し，スパッター特性を調査した結果を示している。Further, FIG. 3 shows the results of investigating the sputter characteristics by processing a rolled material manufactured under the above conditions with a working ratio of 30, 50, and 80% into a sputter target.
【００３２】図３から明らかな様に，従来品（焼結体）
と比較して，本発明品は，処理枚数に係わらず，スパッ
ターした際の成膜に発生するパーティクルの発生頻度が
激減し，低パーティクル化を実現させた。As is apparent from FIG. 3, the conventional product (sintered body)
Compared with the above, the present invention product achieved a reduction in the number of particles, which was significantly reduced in the number of particles generated in the film formation during sputtering, regardless of the number of processed particles.
【００３３】また，相対密度が９６％以上のターゲット
は，従来品に比べ低電圧で放電する為，低電圧でスパッ
ターすると，比抵抗の小さい成膜が得られ，低抵抗化に
なることが容易に推測される。Further, since the target having a relative density of 96% or more discharges at a lower voltage than the conventional product, a film having a small specific resistance can be obtained by sputtering at a low voltage, and the resistance can be easily reduced. Guessed.
【００３４】[0034]
【発明の効果】以上，説明したように，本発明によれ
ば，スパッターした際の成膜に発生するパーティクルの
発生頻度の低下及び成膜の比抵抗を小さくした。つま
り，低パーティクル化，低抵抗を実現することとで，フ
ラット・ディスプレイの製品歩留が向上した。As described above, according to the present invention, the frequency of generation of particles generated during film formation during sputtering and the specific resistance of film formation are reduced. In other words, by achieving low particles and low resistance, the product yield of flat displays has improved.
【図１】本発明の実施例に係るターゲット材の焼結条件
と相対密度との関係を示す図である。FIG. 1 is a diagram showing a relationship between a sintering condition and a relative density of a target material according to an example of the present invention.
【図２】図１のターゲット材の加工率と相対密度との関
係を示す図である。FIG. 2 is a diagram showing a relationship between a processing rate and a relative density of the target material shown in FIG.
【図３】図１のターゲット材の処理枚数とパーティクル
数との関係を示す図である。FIG. 3 is a diagram showing the relationship between the number of processed target materials and the number of particles in FIG.
Claims (8)
ングステンと残部が実質的にモリブデンとからなるモリ
ブデン−タングステン合金からなり，前記合金は，９６
％〜９９．９％の相対密度を有することを特徴とするス
パッターターゲット材。1. A molybdenum-tungsten alloy comprising 30-70 wt% tungsten by weight and the balance substantially molybdenum, said alloy comprising 96
% To 99.9% relative density, the sputter target material.
テンを含み，比較的低い第１の相対密度を備えた焼結体
を用意し，当該焼結体に所定の加工を施すことによっ
て，前記第１の相対密度よりも高い第２の相対密度のタ
ーゲット材を得ることを特徴とするスパッターターゲッ
ト材の製造方法。2. A sintered body containing predetermined molybdenum and tungsten and having a relatively low first relative density is prepared, and the sintered body is subjected to predetermined processing to obtain the first sintered body. A method for producing a sputter target material, which comprises obtaining a target material having a second relative density higher than the relative density.
の製造方法において，前記所定の加工は，圧延及び鍛造
の内の少なくとも一種であることを特徴とするスパッタ
ーターゲット材の製造方法。3. The method for producing a sputter target material according to claim 2, wherein the predetermined processing is at least one of rolling and forging.
ット材の製造方法において，前記第１の相対密度は，９
３％〜９４．５％の範囲内であることを特徴とするスパ
ッターターゲット材の製造方法。4. The method for producing a sputter target material according to claim 2, wherein the first relative density is 9
It is within the range of 3% to 94.5%.
スパッターターゲット材の製造方法において，前記第２
の相対密度は，９６％〜９９．９％の範囲内であること
を特徴とするスパッターターゲット材の製造方法。5. The method for producing a sputter target material according to claim 2, wherein the second target
Relative density is in the range of 96% to 99.9%.
スパッターターゲット材の製造方法において，前記第１
の相対密度を備えた焼結体は，重量パーセントで３０〜
７０ｗｔ％のタングステンと残部としてモリブデンとを
含むモリブデン−タングステン粉末を予め定められたプ
レス圧力によるプレス成形，及び予め定められた焼結条
件による焼結の組み合わせにより製造されていることを
特徴とするスパッターターゲット材の製造方法。6. The method for producing a sputter target material according to claim 2, wherein the first
Sintered bodies with relative densities of
Sputtering characterized in that molybdenum-tungsten powder containing 70 wt% tungsten and the balance molybdenum is produced by a combination of press molding under a predetermined press pressure and sintering under a predetermined sintering condition. Target material manufacturing method.
スパッターターゲット材の製造方法において，前記所定
加工は，前記焼結体を加熱温度１４００〜１６００℃に
おいて加熱しながら行われることを特徴とするスパッタ
ーターゲット材の製造方法。7. The method for producing a sputter target material according to claim 2, wherein the predetermined processing is performed while heating the sintered body at a heating temperature of 1400 to 1600 ° C. A method for producing a characteristic sputter target material.
ット材の製造方法において，前記プレス成形は，少なく
ともプレス圧力が２００ＭＰａで行われ，前記焼結は１
８００℃〜２０００℃で行われることを特徴とするスパ
ッターターゲット材の製造方法。8. The method for manufacturing a sputter target material according to claim 6 or 8, wherein the press molding is performed at a press pressure of at least 200 MPa, and the sintering is 1
A method for producing a sputter target material, which is performed at 800 ° C to 2000 ° C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15354695A JP3418850B2 (en) | 1995-06-20 | 1995-06-20 | Sputter target material and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15354695A JP3418850B2 (en) | 1995-06-20 | 1995-06-20 | Sputter target material and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH093635A true JPH093635A (en) | 1997-01-07 |
| JP3418850B2 JP3418850B2 (en) | 2003-06-23 |
Family
ID=15564880
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15354695A Expired - Fee Related JP3418850B2 (en) | 1995-06-20 | 1995-06-20 | Sputter target material and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3418850B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1849883A3 (en) * | 2004-09-30 | 2008-08-27 | Kabushiki Kaisha Kobe Seiko Sho | Hard coating excellent in wear resistance and in oxidation resistance and target for forming the same |
| SG144788A1 (en) * | 2007-01-11 | 2008-08-28 | Heraeus Inc | Full density co-w magnetic sputter targets |
| KR20170131402A (en) | 2015-03-23 | 2017-11-29 | 미쓰비시 마테리알 가부시키가이샤 | Polycrystalline tungsten, tungsten alloy sintered compact, and method for manufacturing same |
-
1995
- 1995-06-20 JP JP15354695A patent/JP3418850B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1849883A3 (en) * | 2004-09-30 | 2008-08-27 | Kabushiki Kaisha Kobe Seiko Sho | Hard coating excellent in wear resistance and in oxidation resistance and target for forming the same |
| US7521131B2 (en) | 2004-09-30 | 2009-04-21 | Kobe Steel, Ltd. | Hard coating excellent in wear resistance and in oxidation resistance and target for forming the same |
| US7601440B2 (en) | 2004-09-30 | 2009-10-13 | Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.) | Hard coating excellent in wear resistance and in oxidation resistance and target for forming the same |
| SG144788A1 (en) * | 2007-01-11 | 2008-08-28 | Heraeus Inc | Full density co-w magnetic sputter targets |
| KR20170131402A (en) | 2015-03-23 | 2017-11-29 | 미쓰비시 마테리알 가부시키가이샤 | Polycrystalline tungsten, tungsten alloy sintered compact, and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3418850B2 (en) | 2003-06-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP1948376B1 (en) | Methods of making molybdenum titanium sputtering plates and targets | |
| JP5586752B2 (en) | High density refractory metal and alloy sputtering targets | |
| US10211035B2 (en) | Multi-block sputtering target and associated methods and articles | |
| US20150136584A1 (en) | Methods of depositing thin films using molybdenum sputtering targets | |
| JP2016194159A (en) | Target containing molybdenum | |
| JP4237479B2 (en) | Sputtering target, Al alloy film and electronic parts | |
| JP3967067B2 (en) | Sputtering target | |
| JPH03150356A (en) | Tungsten or molybdenum target and production thereof | |
| JPH09196570A (en) | Molybdenum crucible and its manufacture method | |
| JP3863204B2 (en) | Sputtering target material and manufacturing method thereof | |
| JP2020158880A (en) | Mo ALLOY TARGET MATERIAL, AND MANUFACTURING METHOD THEREOF | |
| JP2000234167A (en) | Molybdenum sputtering target material and its production | |
| JP2015196885A (en) | Manufacturing method of ultra-low oxygen/ultra-high pure chromium target and ultra-low oxygen/ultra-high pure chromium target | |
| JP3418850B2 (en) | Sputter target material and method for producing the same | |
| JP4928706B2 (en) | Method for producing Nb sputtering target for optical thin film formation | |
| JPWO2005031028A1 (en) | Sputtering target, Si oxide film using the same, manufacturing method thereof, and display device | |
| JP2005133198A (en) | HIGH-PURITY HIGH-DENSITY METAL Mo SINTERING TARGET FOR SPUTTERING WHICH ENABLES FORMATION OF HIGH-PURITY METAL Mo THIN FILM PRODUCING EXTREMELY FEW PARTICLE | |
| JPH03173704A (en) | Production of target for sputtering | |
| JP2002339031A (en) | Molybdenum plate and method for producing the same | |
| CN113584366B (en) | Niobium alloy sputtering target material and preparation method thereof | |
| JP2001303243A (en) | Sputtering target, method for manufacturing the same, and electronic component | |
| JPH04160104A (en) | Production of tungsten target | |
| JP2000256836A (en) | Tungsten target for sputtering and method for producing the same | |
| CN109207941B (en) | MoNb target material | |
| JP2001262326A (en) | Indium oxide-metallic thin powder mixture, ito sputtering target using the same powdery mixture as raw material and method for producing the same target |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20030312 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20080418 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20090418 Year of fee payment: 6 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100418 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20100418 Year of fee payment: 7 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110418 Year of fee payment: 8 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120418 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20120418 Year of fee payment: 9 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130418 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20130418 Year of fee payment: 10 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140418 Year of fee payment: 11 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |