JPH09300344A - Slice stand, single crystal using the same and cutting of bulk member - Google Patents
Slice stand, single crystal using the same and cutting of bulk memberInfo
- Publication number
- JPH09300344A JPH09300344A JP14966396A JP14966396A JPH09300344A JP H09300344 A JPH09300344 A JP H09300344A JP 14966396 A JP14966396 A JP 14966396A JP 14966396 A JP14966396 A JP 14966396A JP H09300344 A JPH09300344 A JP H09300344A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- bulk body
- slice
- adhesive
- crystal bulk
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 41
- 238000005520 cutting process Methods 0.000 title claims abstract description 30
- 239000000853 adhesive Substances 0.000 claims abstract description 30
- 230000001070 adhesive effect Effects 0.000 claims abstract description 30
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000000919 ceramic Substances 0.000 claims abstract description 9
- 239000002023 wood Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 13
- 229920006332 epoxy adhesive Polymers 0.000 claims description 2
- 230000007257 malfunction Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 13
- 239000000463 material Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 6
- 229910002804 graphite Inorganic materials 0.000 description 6
- 239000010439 graphite Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000006061 abrasive grain Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 208000032368 Device malfunction Diseases 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
【発明の属する技術分野】本発明はスライス台、および
それを用いた単結晶バルク体の切断方法に関し、更に詳
しくは、例えばＳｉ単結晶のバルク体をワイヤソーでス
ライス（切断）してＳｉウエハを製造するときに用いる
スライス台とそれを用いた切断方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a slicing table and a method for cutting a single crystal bulk body using the same. More specifically, for example, a Si single crystal bulk body is sliced (cut) with a wire saw to obtain a Si wafer. The present invention relates to a slice table used for manufacturing and a cutting method using the same.
【０００２】[0002]
【従来の技術】各種の半導体素子の基板として多用され
ているＳｉウエハは、従来、次のようにして製造されて
いる。2. Description of the Related Art Si wafers, which are widely used as substrates for various semiconductor devices, have been conventionally manufactured as follows.
【０００３】すなわちまず、例えばチョクラルスキー法
などで製造されたＳｉ単結晶のバルク体の外形を所定寸
法に切削加工したのち方位カットを行ない、得られたバ
ルク体をスライス台の上に接着剤で接着固定し、ついで
厚み０．３ｍｍ程度のドーナツ状のステンレス鋼板の内
周にダイヤモンド粉を電着した内周刃切断機で一定厚み
のウエハに切断する。その後、切断した各ウエハはスラ
イス台から取外され、次いで面取りや鏡面仕上げなどが
行なわれて次工程に移送される。That is, first, the outer shape of a bulk body of a Si single crystal manufactured by, for example, the Czochralski method is cut into a predetermined size and then subjected to azimuth cutting, and the obtained bulk body is bonded on a slice table with an adhesive. Then, the wafer is cut into wafers of a certain thickness by an inner blade cutting machine in which diamond powder is electrodeposited on the inner circumference of a doughnut-shaped stainless steel plate having a thickness of about 0.3 mm. Thereafter, the cut wafers are removed from the slicing table, chamfered and mirror-finished, and transferred to the next step.
【０００４】なお、使用されたスライス台は再使用され
ることなく、使い捨てられる。The used slicing table is thrown away without being reused.
【０００５】上記した切断工程において、バルク体をス
ライス台に接着固定するために用いられる接着剤として
は、使用温度が１００℃以上のものが主流をなしてい
る。そのため、バルク体をスライス台に接着固定する過
程では、スライス台を１００℃以上の温度に加熱してそ
の熱で表面に塗布されている接着剤に接着能を発揮させ
ることが必要になる。すなわち、スライス台の構成材料
は熱伝導性に優れていることが好適とされている。この
ようなことから、現在のところ、スライス台としては、
熱伝導性が優れている黒鉛製のものがほとんどである。
また黒鉛は軟質で易加工性材料でもあるので、バルク体
との接着面を高精度に加工できるということもスライス
台材料として汎用される大きな理由である。In the above-mentioned cutting step, as the adhesive used for adhering and fixing the bulk body to the slicing table, one having a working temperature of 100 ° C. or higher is predominant. Therefore, in the process of adhesively fixing the bulk body to the slicing table, it is necessary to heat the slicing table to a temperature of 100 ° C. or higher so that the adhesive applied to the surface of the slicing table exhibits an adhesive ability. That is, it is said that the constituent material of the slice table is preferably excellent in thermal conductivity. Because of this, currently, as a slice table,
Most of them are made of graphite, which has excellent thermal conductivity.
Further, since graphite is a soft and easily workable material, the fact that the bonding surface with the bulk body can be processed with high precision is a major reason why it is widely used as a slice base material.
【０００６】ところで、最近は、製造される単結晶バル
ク体の直径が大径化していく傾向にあるが、大径の単結
晶バルク体を前記した円周刃切断機で切断する場合には
次のような問題がある。By the way, recently, the diameter of the manufactured single crystal bulk body tends to increase, but when the large diameter single crystal bulk body is cut by the above-mentioned circumferential blade cutting machine, There is such a problem.
【０００７】まず、バルク体が大径化すればするほど、
それに応じて内周刃の切込み長も長くなるので、切断時
には内周刃のたわみやしなりなども多発して正確な切断
ができなくなるという問題である。First, the larger the bulk body diameter,
Accordingly, the cutting length of the inner peripheral blade also becomes long, so that there is a problem in that the inner peripheral blade frequently bends or bends during cutting, making it impossible to perform accurate cutting.
【０００８】そして、このような問題の発生を防ぐため
に、内周刃の厚みを厚くして内周刃それ自体の強度を高
めることも考えられるが、そのような処置はバルク体の
切り代を多くすることになり、ウエハの取得効率を低め
るだけではなく、高価なバルク体を無駄に切断するとい
う新たな問題を引き起こす。In order to prevent the occurrence of such a problem, it is conceivable to increase the thickness of the inner peripheral blade to increase the strength of the inner peripheral blade itself. This not only lowers the wafer acquisition efficiency, but also causes a new problem of wastefully cutting the expensive bulk body.
【０００９】このようなことから、大径化した単結晶バ
ルク体の切断においては、最近、ワィヤソーを用いる方
法が注目されている。以下に、この方法の概略を図面に
則して説明する。In view of the above, a method using a wire saw has recently attracted attention for cutting a single crystal bulk body having a large diameter. The outline of this method will be described below with reference to the drawings.
【００１０】まず、黒鉛製のスライス台１の上に切断対
象の単結晶バルク体２を接着剤で接着固定してワイヤソ
ー装置にセットする。ここで、スライス台１は、図２で
示したように、全体が板体形状をなしていて、単結晶バ
ルク体２を接着する上面１ａは当該バルク体の曲率に適
合した曲率を有する凹曲面をなし、下面１ｂは平坦面を
なし、そして両側端１ｃ、１ｃは高くなっている。First, a single crystal bulk body 2 to be cut is adhered and fixed on a graphite slicing table 1 with an adhesive and set in a wire saw device. Here, as shown in FIG. 2, the slicing table 1 has a plate shape as a whole, and the upper surface 1a to which the single crystal bulk body 2 is bonded has a concave curved surface having a curvature adapted to the curvature of the bulk body. , The lower surface 1b is a flat surface, and both side edges 1c, 1c are raised.
【００１１】ワイヤソー装置においては、線径が０．１
〜０．２ｍｍ程度の細い導電性線材から成るワイヤソー
３が、外周面に所定間隔を置いて刻設された複数の溝を
有する一対のローラ４ａ、４ｂに張設され、かつワイヤ
ソー３は全体として閉回路をなして循環走行するように
なっている。In the wire saw device, the wire diameter is 0.1.
A wire saw 3 made of a thin conductive wire of about 0.2 mm is stretched around a pair of rollers 4a and 4b having a plurality of grooves engraved at a predetermined interval on the outer peripheral surface, and the wire saw 3 as a whole. It is designed to circulate in a closed circuit.
【００１２】切断に際しては、まず、ローラ４ａ、４ｂ
を例えば矢印ｐ１方向に高速回転させることにより、こ
れらに張設されているワイヤソー３の全てを矢印ｐ２方
向に循環走行させる。循環走行するワイヤソー３には、
図示しない給電装置から給電され、同時に、図示しない
砥粒付着装置を通過するときにその表面に砥粒が担持さ
れる。したがって、ローラ４ａとローラ４ｂの間を走行
するワイヤソー３の表面には砥粒が付着していてワイヤ
ソー３は切断能を備えた状態にある。When cutting, first, the rollers 4a, 4b.
Is rotated at a high speed in the direction of arrow p1, for example, so that all of the wire saws 3 stretched around them are circulated in the direction of arrow p2. In the wire saw 3 that circulates,
Power is supplied from a power supply device (not shown), and at the same time, abrasive grains are carried on the surface of the device when passing through an abrasive grain depositing device (not shown). Therefore, the abrasive grains adhere to the surface of the wire saw 3 traveling between the rollers 4a and 4b, and the wire saw 3 has a cutting ability.
【００１３】この状態で、ローラ４ａ、４ｂとワイヤソ
ー３とから成る系を矢印ｐ３で示したように下方に移動
させ、単結晶バルク体２を、その上端面２ａから下端面
２ｂにかけて径方向に切断し、ワイヤソー３が下端面２
ｂを通過した時点をもって切断動作を停止する。その結
果、単結晶バルク体２は、細いワイヤソー３の径を切り
代とした状態で、１度に所定厚み（ワイヤソー３相互の
間隔に相当）のウエハに切断される。In this state, the system consisting of the rollers 4a and 4b and the wire saw 3 is moved downward as indicated by the arrow p3, and the single crystal bulk body 2 is radially moved from its upper end surface 2a to its lower end surface 2b. Cut the wire saw 3 into the bottom surface 2
The cutting operation is stopped at the time point when b has been passed. As a result, the single crystal bulk body 2 is cut into a wafer having a predetermined thickness (corresponding to the distance between the wire saws 3) at a time, with the diameter of the thin wire saw 3 being used as a cutting margin.
【００１４】このワイヤソーによる切断は、単結晶バル
ク体２の直径が大径になってもローラ４ａ、４ｂ間の間
隔を調整して容易に行なうことができ、しかも切り代は
従来の内周刃の場合に比べて起かに小さくなり材料の無
駄をなくすという点では有用である。This cutting with the wire saw can be easily performed by adjusting the interval between the rollers 4a and 4b even if the diameter of the single crystal bulk body 2 becomes large, and the cutting allowance is the conventional inner peripheral blade. This is useful in that it is much smaller than in the case of (1) and waste of material is eliminated.
【００１５】しかしながら、スライス台１が黒鉛製であ
るということから次のような問題が発生してくる。However, since the slicing table 1 is made of graphite, the following problems occur.
【００１６】すなわち、ワイヤソー３が単結晶バルク体
２の下端面２ｂに到達する前に、ワイヤソー３はスライ
ス台１の両側端１ｃ、１ｃを必ず切断する。そしてワイ
ヤソー３は前記したように給電されており、かつスライ
ス台１は導電性の黒鉛で構成されているため、そのスラ
イス台１を介して各種の制御装置への漏電現象が起こ
り、その結果、装置が全体として誤動作することもあ
る。That is, before the wire saw 3 reaches the lower end surface 2b of the single crystal bulk body 2, the wire saw 3 necessarily cuts both side ends 1c, 1c of the slicing table 1. Since the wire saw 3 is supplied with power as described above and the slice base 1 is made of conductive graphite, an electric leakage phenomenon occurs to various control devices via the slice base 1, and as a result, The device may malfunction as a whole.
【００１７】そのため、現状のワイヤソーによる切断で
は、図２で示したように、黒鉛製のスライス台１の下面
１ｂに、接着剤で、ガラス板のような絶縁板５を接着し
て、前記した漏電現象を防いでいる。Therefore, in the current cutting with a wire saw, as shown in FIG. 2, an insulating plate 5 such as a glass plate is adhered to the lower surface 1b of the graphite slicing table 1 with an adhesive, as described above. Prevents the leakage phenomenon.
【００１８】[0018]
【発明が解決しようとする諸課題】しかしながら、上記
した漏電防止対策を採用したワイヤソーによる切断は、
従来に比べるとスライス台１を絶縁板５に接着する工程
が不可避的に増加して製造コストの上昇を招くので、工
業的には好ましいこととはいえない。However, the cutting by the wire saw adopting the above-mentioned leakage preventive measures is
Compared with the conventional case, the process of adhering the slicing table 1 to the insulating plate 5 is unavoidably increased, resulting in an increase in manufacturing cost, which is not industrially preferable.
【００１９】ところで、上記したスライス台からの漏電
現象を防止するためには、スライス台それ自体を電気絶
縁性の材料で構成すればよいことが考えられる。By the way, in order to prevent the electric leakage phenomenon from the slicing table, it is conceivable that the slicing table itself should be made of an electrically insulating material.
【００２０】しかしながら、電気絶縁性の材料は一般に
熱伝導性も悪いということから次のような問題がある。
すなわち、スライス台と単結晶バルク体の接着に用いる
接着剤は、前記したように、通常１００℃以上の使用温
度を有するものであるため、熱伝導性が悪い材料から成
るスライス台の上にその接着剤を塗布して当該スライス
台を加熱してもその熱は塗布されている接着剤にまで伝
達せず、そのため、単結晶バルク体の接着は事実上不可
能になるということである。However, since an electrically insulating material generally has poor thermal conductivity, it has the following problems.
That is, since the adhesive used for bonding the slice base and the single crystal bulk body usually has a working temperature of 100 ° C. or higher, as described above, the adhesive on the slice base made of a material having poor thermal conductivity. This means that even if the adhesive is applied and the slice table is heated, the heat is not transferred to the applied adhesive, so that the adhesion of the single crystal bulk body is practically impossible.
【００２１】たしかに、熱伝導性も良好なセラミックス
のような絶縁性材料も開発されているが、それらはいず
れも硬度が高く難加工性の材料であり、しかも高価であ
るため、使い捨てを前提とするスライス台の材料として
採用することはできない。Certainly, insulating materials such as ceramics having good thermal conductivity have also been developed, but all of them are materials having high hardness and are difficult to process, and are expensive, so they are assumed to be disposable. It cannot be used as a material for a slice table.
【００２２】本発明は、単結晶バルク体の大径化に伴な
って採用されはじめたワイヤソーによる切断を行なうと
きのスライス台における上記した問題を解決し、単結晶
バルク体の接着固定に用いる接着剤として後述するタイ
プのものを選定し、この接着剤と組み合わせて使用する
ことによって前記漏電現象を防止することができる新規
なスライス台と、そのスライス台を用いた単結晶バルク
体の切断方法の提供を目的とする。The present invention solves the above-mentioned problems in the slicing table when performing cutting with a wire saw, which has been adopted with the increase in diameter of single crystal bulk bodies, and is used for bonding and fixing single crystal bulk bodies. A type of agent described below is selected as the agent, and a novel slicing table capable of preventing the electric leakage phenomenon by using in combination with this adhesive, and a method for cutting a single crystal bulk body using the slicing table. For the purpose of provision.
【００２３】[0023]
【課題を解決するための手段】上記した目的を達成する
ために、本発明においては、電気絶縁性のセラミックス
系人造木材から成ることを特徴とするスライス台が提供
され、また、室温下で接着能を発揮し、かつ熱水中で接
着能を喪失する接着剤を用いて前記スライス台の上に単
結晶または多結晶バルク体を接着し、前記単結晶バルク
体をワイヤソーで所定厚みのウエハに切断したのち、熱
水と接触させて前記ウエハを前記スライス台から分離す
ることを特徴とする単結晶バルク体の切断方法が提供さ
れる。In order to achieve the above object, the present invention provides a slicing table characterized by being made of an electrically insulating ceramic-based artificial wood, and is bonded at room temperature. Adhere a single crystal or polycrystalline bulk body on the slicing table using an adhesive that exerts its ability and loses its adhesive ability in hot water, and the single crystal bulk body is made into a wafer of a predetermined thickness with a wire saw. After the cutting, a method for cutting a single crystal bulk body is provided, which comprises contacting with hot water to separate the wafer from the slicing table.
【００２４】[0024]
【発明の実施の形態】まず、本発明のスライス台１は、
その構成材料が電気絶縁性のセラミックス系人造木材で
あることを特徴とし、その形状は従来からのスライス台
と変わることはない。BEST MODE FOR CARRYING OUT THE INVENTION First, the slice table 1 of the present invention is
It is characterized in that its constituent material is an electrically insulating ceramic-based artificial wood, and its shape is the same as that of a conventional slicing table.
【００２５】本発明のスライス台は電気絶縁性であるた
め、図１の仮装線で示したようにワイヤソー３がスライ
ス台の両側端１ｃ、１ｃを切断した場合でも装置全体の
漏電現象を引き起こすことはない。Since the slicing table of the present invention is electrically insulative, even if the wire saw 3 cuts the both ends 1c, 1c of the slicing table as shown by the provisional wire in FIG. There is no.
【００２６】このようなセラミックス系人造木材として
は、例えば株式会社小野田が製造・販売している「エー
スライトＫ」（商品名）を好適なものとしてあげること
ができる。この「エースライトＫ」は、高純度ゾノライ
ト（Ｘｏｎｏｔｌｉｔｅ：６ＣａＯ・６ＳｉＯ２・Ｈ２
Ｏ）を主成分とし、吸湿・吸水・加熱時にも寸法変化は
少なく、加工性も優れた材料であり、スライス台の上面
の凹曲面形状を精度よく加工できるので好適である。本
発明では、このようなセラミックス系人造木材のスライ
ス台を用いることにより、次のようにして単結晶バルク
体を切断する。As such a ceramic artificial wood, for example, "Acelite K" (trade name) manufactured and sold by Onoda Co., Ltd. can be cited as a preferable example. This "Acelite K" is a high-purity Xonolite (Xonolite: 6CaO ・ 6SiO 2・ H 2
O) is a main component, and it is a material that has little dimensional change during moisture absorption, water absorption, and heating, and has excellent workability, and is suitable because it can accurately process the concave curved surface shape of the upper surface of the slice table. In the present invention, the single crystal bulk body is cut as follows by using such a ceramic-based artificial wood slicing table.
【００２７】まず、図２で示したような形状に加工した
スライス台１の上面に接着剤を塗布し、そこに単結晶バ
ルク体２を載置して接着固定する。このときの接着剤と
しては、室温下で接着能を発揮しかつ温度が８０〜１０
０℃程度の熱水中では接着能を喪失するような接着剤が
用いられる。First, an adhesive is applied to the upper surface of the slice table 1 processed into the shape shown in FIG. 2, and the single crystal bulk body 2 is placed and fixed by adhesion. As the adhesive at this time, the adhesive exhibits an adhesive ability at room temperature and has a temperature of 80 to 10
An adhesive that loses its adhesive ability in hot water of about 0 ° C. is used.
【００２８】したがって、単結晶バルク体をスライス台
に接着固定するときには、従来のようにスライス台を加
熱する工程は不要になって従来に比べて工程減が実現さ
れる。Therefore, when the single crystal bulk body is adhered and fixed to the slice table, the step of heating the slice table as in the conventional case is unnecessary, and the number of steps can be reduced as compared with the conventional case.
【００２９】このような接着剤としては、日化精工株式
会社から市販されているＷ−ＢＯＮＤＮＣ−１６Ｋ、Ｑ
−ＢＯＮＤ１ＭＲ、Ｚ−ＢＯＮＤ（いずれも商品名）な
どをあげることができる。これらの接着剤は、いずれ
も、２液型のエポキシ系接着剤であって、室温下でスラ
イス台に単結晶バルク体を接着することができ、また、
熱水、とりわけ沸とう水に浸漬すると接着力を喪失する
ので単結晶バルク体をスライス台から剥離することがで
きる。Examples of such an adhesive include W-BONDNC-16K and Q commercially available from Nikka Seiko Co., Ltd.
-BOND1MR, Z-BOND (both are trade names) and the like. Each of these adhesives is a two-pack type epoxy adhesive, which can adhere a single crystal bulk body to a slice table at room temperature.
When immersed in hot water, especially boiling water, the adhesive strength is lost, so that the single crystal bulk body can be peeled from the slicing table.
【００３０】単結晶バルク体が上記接着剤で接着されて
いる本発明のスライス台は、前記したようにワイヤソー
装置にセットされ、従来と同じように切断操作が進めら
れる。このとき、図１で示したように、ワイヤソー３が
スライス台の両側端１ｃ、１ｃを切断しても、スライス
台は電気絶縁性であるので漏電現象は起こさず、装置全
体は誤動作を起こすことなく所定の切断動作を継続し
て、バルク体は所定厚みのウエハに切断される。そし
て、ウエハが接着しているスライス台をそのまま例えば
所定温度の熱水に浸漬することにより、ウエハはスライ
ス台から分離される。The slicing table of the present invention in which the single crystal bulk body is adhered with the above-mentioned adhesive is set in the wire saw device as described above, and the cutting operation proceeds in the same manner as in the conventional case. At this time, as shown in FIG. 1, even if the wire saw 3 cuts the both ends 1c, 1c of the slicing table, the slicing table is electrically insulative, so that the leakage phenomenon does not occur and the entire apparatus malfunctions. Without continuing the predetermined cutting operation, the bulk body is cut into a wafer having a predetermined thickness. Then, the wafer is separated from the slicing table by immersing the slicing table to which the wafer is bonded as it is in, for example, hot water at a predetermined temperature.
【００３１】[0031]
【発明の効果】以上の説明で明らかなように、本発明の
スライス台は前記した接着剤を併用することにより、大
径化した単結晶バルク体をワイヤソーで切断してウエハ
を製造するときに生起していた問題、すなわちスライス
台の漏電に基づくワイヤソー装置の誤動作発生という問
題を解決することができる。As is clear from the above description, the slicing table of the present invention is used in combination with the above-mentioned adhesive to cut a large-diameter single crystal bulk body with a wire saw to produce a wafer. It is possible to solve the problem that has occurred, that is, the problem that the wire saw device malfunctions due to the electric leakage of the slice table.
【００３２】これは、本発明のスライス台が電気絶縁性
のセラミックス系人造木材で構成され、また単結晶バル
ク体を、室温下で接着能を発揮しかつ熱水中で接着能を
喪失する接着剤で接着したことからもたらす効果であ
る。This is because the slicing table of the present invention is composed of an electrically insulating ceramic artificial wood, and a single crystal bulk body exhibits adhesiveness at room temperature and loses adhesiveness in hot water. This is the effect brought about by bonding with the agent.
【００３３】[0033]
【図１】ワイヤソーで単結晶バルク体を切断する状態を
示す概略図である。FIG. 1 is a schematic view showing a state in which a single crystal bulk body is cut with a wire saw.
【図２】スライス台を示す斜視図である。FIG. 2 is a perspective view showing a slice table.
【図３】スライス台に絶縁板を接着した状態を示す概略
図である。FIG. 3 is a schematic view showing a state in which an insulating plate is bonded to a slice table.
１ スライス台 １ａ スライス台１の上面 １ｂ スライス台１の下面 １ｃ スライス台１の両側端 ２ 単結晶バルク体 ２ａ 単結晶バルク体２の上端面 ２ｂ 単結晶バルク体２の下端面 ３ ワイヤソー ４ａ、 ４ｂ ローラ 1 Slice table 1a Slice table 1 upper surface 1b Slice table 1 lower surface 1c Slice table 1 both ends 2 Single crystal bulk body 2a Single crystal bulk body 2 upper end surface 2b Single crystal bulk body 2 lower end surface 3 Wire saw 4a, 4b roller
Claims (4)
ら成ることを特徴とする単結晶バルク体のスライス台。1. A slice stand for a single crystal bulk body, which is made of an electrically insulating ceramics-based artificial wood.
ゾノライトを主成分として成る請求項１の単結晶バルク
体のスライス台。2. The slice base for a single crystal bulk body according to claim 1, wherein the ceramic artificial wood is mainly composed of high-purity zonolite.
着能を喪失する接着剤を用いて請求項１のスライス台の
上に単結晶バルク体を接着し、前記単結晶または多結晶
バルク体をワイヤソーで所定厚みのウエハに切断したの
ち、熱水と接触させて前記ウエハを前記スライス台から
分離することを特徴とする単結晶バルク体の切断方法。3. A single crystal bulk body is adhered on the slice table according to claim 1 by using an adhesive that exhibits adhesiveness at room temperature and loses adhesiveness in hot water. A method for cutting a single crystal bulk body, which comprises cutting the crystal bulk body into a wafer having a predetermined thickness with a wire saw, and then bringing the wafer into contact with hot water to separate the wafer from the slicing table.
剤である請求項３の単結晶バルク体の切断方法。 【０００１】4. The method for cutting a single crystal bulk body according to claim 3, wherein the adhesive is a two-pack type epoxy adhesive. [0001]
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14966396A JPH09300344A (en) | 1996-05-09 | 1996-05-09 | Slice stand, single crystal using the same and cutting of bulk member |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14966396A JPH09300344A (en) | 1996-05-09 | 1996-05-09 | Slice stand, single crystal using the same and cutting of bulk member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09300344A true JPH09300344A (en) | 1997-11-25 |
Family
ID=15480136
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14966396A Pending JPH09300344A (en) | 1996-05-09 | 1996-05-09 | Slice stand, single crystal using the same and cutting of bulk member |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09300344A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011518688A (en) * | 2008-04-23 | 2011-06-30 | アプライド マテリアルズ スイツァーランド エス エー | Wire cutting device mounting plate, wire cutting device including wire cutting device mounting plate, and wire cutting process executed by wire cutting device |
-
1996
- 1996-05-09 JP JP14966396A patent/JPH09300344A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011518688A (en) * | 2008-04-23 | 2011-06-30 | アプライド マテリアルズ スイツァーランド エス エー | Wire cutting device mounting plate, wire cutting device including wire cutting device mounting plate, and wire cutting process executed by wire cutting device |
| JP2012006144A (en) * | 2008-04-23 | 2012-01-12 | Applied Materials Switzerland Sa | Mounting plate for wire sawing device, wire sawing device including the same, and wire sawing process executed by wire sawing device |
| KR101313771B1 (en) * | 2008-04-23 | 2013-10-01 | 어플라이드 머티리얼스 스위츠랜드 에스에이 | Mounting plate for a wire sawing device, wire sawing device comprising the same, and wire sawing process carried out by the device |
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