JPH09256200A - Plating film surface treatment method - Google Patents
Plating film surface treatment methodInfo
- Publication number
- JPH09256200A JPH09256200A JP9029596A JP9029596A JPH09256200A JP H09256200 A JPH09256200 A JP H09256200A JP 9029596 A JP9029596 A JP 9029596A JP 9029596 A JP9029596 A JP 9029596A JP H09256200 A JPH09256200 A JP H09256200A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- plated
- surface treatment
- plating film
- bright
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 title claims abstract description 93
- 238000004381 surface treatment Methods 0.000 title claims abstract description 24
- 238000000034 method Methods 0.000 title claims description 24
- 239000000463 material Substances 0.000 claims abstract description 24
- 239000003513 alkali Substances 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001257 hydrogen Substances 0.000 claims abstract description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 10
- 150000002825 nitriles Chemical class 0.000 claims abstract description 5
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims description 9
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 3
- 239000012530 fluid Substances 0.000 claims description 2
- 238000007654 immersion Methods 0.000 claims 1
- 239000012266 salt solution Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 claims 1
- 230000003746 surface roughness Effects 0.000 abstract description 9
- 238000004090 dissolution Methods 0.000 description 20
- 239000010949 copper Substances 0.000 description 10
- 239000007788 liquid Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- WFDIJRYMOXRFFG-UHFFFAOYSA-N Acetic anhydride Chemical compound CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000005282 brightening Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000010668 complexation reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004880 explosion Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007333 cyanation reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Landscapes
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
(57)【要約】
【課題】 半光沢めっき又は無光沢めっきを短時間に厚
膜に形成すると、表面粗さが大きくなる。表面状況が粗
いめっき膜は、ワイヤボンディング性やダイボンディン
グ性が悪く、リードフレーム等に用いるには適しない。
【解決手段】 無光沢Ａｇめっき又は光沢Ａｇめっきが
施された被めっき材を１０〜２００ｇ／ｌ−シアン化ア
ルカリ塩の流動溶液に浸漬し、この状態で水素電極基準
で−０．２〜＋０．８Ｖの電位或いは１０〜５０ｍＡ／
ｃｍ2 の電流を５〜６０秒間付与して表面処理を行う。
これにより、めっき面を均一に溶解でき、めっき面の表
面粗さを小さくすることができる。(57) [Abstract] [Problem] When a semi-bright plating or a dull plating is formed into a thick film in a short time, the surface roughness becomes large. A plated film having a rough surface has poor wire bonding properties and die bonding properties and is not suitable for use in lead frames and the like. SOLUTION: A material to be plated, which has been subjected to dull Ag plating or bright Ag plating, is dipped in a flowing solution of 10 to 200 g / l-alkali cyanide salt, and in this state, -0.2 to +0 based on a hydrogen electrode standard. Potential of 8V or 10-50mA /
A surface treatment is performed by applying a current of cm 2 for 5 to 60 seconds.
Thereby, the plated surface can be uniformly dissolved, and the surface roughness of the plated surface can be reduced.
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、銅合金の表面に半
光沢又は無光沢のめっき表面に対し、その表面を平滑化
するためのめっき膜の表面処理方法に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface treatment method of a plating film for smoothing a semi-gloss or matte plating surface on a copper alloy surface.
【０００２】[0002]
【従来の技術】電子部品材料、例えば半導体装置に用い
られるリードフレームは、ボンディング性を良好にする
ため、銀（Ａｇ）めっきが施されている。このＡｇめっ
きは、密着性に優れ、各種のめっき欠陥が生じにくい半
光沢めっき又は無光沢めっきが用いられる。2. Description of the Related Art Electronic component materials, for example, lead frames used in semiconductor devices are plated with silver (Ag) in order to improve the bonding property. As the Ag plating, a semi-bright plating or a dull plating which has excellent adhesion and is less likely to cause various plating defects is used.
【０００３】[0003]
【発明が解決しようとする課題】しかし、従来の銀めっ
き膜の表面処理方法によると、半光沢めっき又は無光沢
めっきを用い、作業能率を高める目的で厚いめっき膜を
短時間に形成（高電流密度におけるめっき作業）する
と、めっき時間の経過（めっき膜厚の増加）に伴ってめ
っき膜粗さが単調に増大し、表面平滑性に優れためっき
膜を得ることが困難になる。当初の被めっき材の表面状
況が粗いと、その粗さを反映して最終的に設けためっき
膜の粗さは更に粗くなる。However, according to the conventional method for surface treatment of silver plating film, semi-gloss plating or matte plating is used to form a thick plating film in a short time for the purpose of improving work efficiency (high current). When the plating operation at the density) is performed, the plating film roughness monotonously increases as the plating time elapses (the plating film thickness increases), and it becomes difficult to obtain a plating film having excellent surface smoothness. If the surface condition of the material to be plated at the beginning is rough, the roughness of the plating film finally provided will be further rough due to the roughness.
【０００４】このように表面の粗いめっき膜は、ワイヤ
ボンディング性やダイボンディング性が悪く、リードフ
レーム等に用いるには適しない。表面状況の粗さを防止
するため、光沢剤（有機物や特殊金属）を添加した光沢
めっき薬品を用いる手段が一般に用いられている。しか
し、半光沢又は無光沢めっきに比べ、膜質が固く、密着
性に欠けると共に各種めっき欠陥が生じやすいという別
の問題がある。As described above, the plating film having a rough surface is not suitable for a lead frame or the like because it has poor wire bonding property and die bonding property. In order to prevent the roughness of the surface condition, a means using a bright plating chemical to which a brightening agent (organic substance or special metal) is added is generally used. However, as compared with semi-bright or matte plating, there are other problems that the film quality is hard, the adhesion is poor, and various plating defects are likely to occur.
【０００５】したがって、半光沢又は無光沢めっきの最
外層を平滑に仕上げ、その上に平滑表面を有するめっき
面を与えることが好ましい。なお、被めっき材やめっき
膜の表面を平滑に仕上げることのできる電解研磨には、
〔無水酢酸＋濃厚燐酸溶液又は濃厚過塩素酸＋濃厚硫酸
溶液〕における大電流電解による方法が知られている。
しかし、これらは強い腐食性を有し、溶解速度や溶
解状態の微調整が困難、爆発の危険性が有る、等の障
害があり、実プロセスに採用するには至っていない。Therefore, it is preferable to finish the outermost layer of the semi-bright or matte plating to be smooth and to provide a plated surface having a smooth surface thereon. In addition, for electrolytic polishing that can finish the surface of the material to be plated or the plated film to be smooth,
A method by large current electrolysis in [acetic anhydride + concentrated phosphoric acid solution or concentrated perchloric acid + concentrated sulfuric acid solution] is known.
However, they have strong corrosive properties, and there are obstacles such as difficulty in fine adjustment of dissolution rate and dissolution state, risk of explosion, etc., and they have not yet been adopted in actual processes.
【０００６】そこで本発明は、強い腐食性を有さず、溶
解速度や溶解状態の微調整が容易で、爆発の危険性無く
平滑表面を得ることができ、実プロセスへの採用が可能
なめっき膜の表面処理方法を提供することを目的として
いる。Therefore, the present invention does not have strong corrosiveness, the fine adjustment of the dissolution rate and the dissolution state is easy, a smooth surface can be obtained without the risk of explosion, and the plating that can be adopted in an actual process is used. An object is to provide a surface treatment method for a film.
【０００７】[0007]
【課題を解決するための手段】上記の目的を達成するた
めに、この発明は、無光沢Ａｇめっき又は光沢Ａｇめっ
きが施された被めっき材を流動状態にある１０〜２００
ｇ／ｌ−シアン化アルカリ塩溶液に浸漬し、この浸漬状
態のまま水素電極基準で−０．２〜＋０．８Ｖの電位或
いは１０〜５０ｍＡ／ｃｍ2 の電流を５〜６０秒間付与
して表面処理を行うようにしている。In order to achieve the above object, the present invention provides a material to be plated on which matte Ag plating or bright Ag plating has been applied in a fluid state of 10 to 200.
Immerse in a g / l-alkali cyanide solution and apply a potential of −0.2 to +0.8 V or a current of 10 to 50 mA / cm 2 on the basis of the hydrogen electrode for 5 to 60 seconds in this immersed state. I am trying to process it.
【０００８】この方法によれば、１０〜２００ｇ／ｌ−
シアン化アルカリ塩の流動溶液に浸漬することにより溶
解速度を確保しながら液管理を容易にする。−０．２Ｖ
〜＋０．８Ｖの電位を付与することにより、めっき表面
の最外層を均一に溶解し、平坦な表面が形成される。更
に、電位付与を５秒〜６０秒とすることにより、十分な
処理がなされる。また、溶液を流動させることにより、
溶解成分の再付着や溶解むらが生じるのが防止される。
以上により、良好な平坦表面を得ることができる。According to this method, 10 to 200 g / l-
By immersing in a fluidized solution of an alkali cyanide salt, liquid management is facilitated while ensuring a dissolution rate. -0.2V
By applying a potential of +0.8 V, the outermost layer on the plating surface is uniformly dissolved and a flat surface is formed. Further, by applying the potential for 5 seconds to 60 seconds, sufficient processing is performed. Also, by flowing the solution,
The redeposition of dissolved components and uneven dissolution are prevented.
As described above, a good flat surface can be obtained.
【０００９】前記表面処理後にＡｇめっきを施すことが
できる。このＡｇめっきにより、表面の光沢処理が可能
になる。更に、前記被めっき材は、リードフレームにす
ることができる。リードフレームは良好なワイヤボンデ
ィング性やダイボンディング性を確保するために最終的
に施されるめっきの表面平滑性及び密着性が要求され
る。本発明による処理は、表面を均一に溶解し、平坦な
表面が得られ、光沢メッキを施しても表面平滑性及び密
着性が損なわれず、ワイヤボンディング性、ダイボンデ
ィング性を確保することができる。After the surface treatment, Ag plating can be applied. This Ag plating enables surface gloss treatment. Further, the material to be plated can be a lead frame. The lead frame is required to have surface smoothness and adhesion of the plating finally applied to secure good wire bonding and die bonding. The treatment according to the present invention uniformly dissolves the surface, a flat surface is obtained, and even if bright plating is applied, the surface smoothness and the adhesion are not impaired, and the wire bonding property and the die bonding property can be secured.
【００１０】また、上記の目的は、Ｃｕ合金材、又は無
光沢Ｃｕめっき又は光沢Ｃｕめっきが施された被めっき
材を流動状態にある１０〜２００ｇ／ｌ−シアン化アル
カリ塩溶液に浸漬し、この浸漬状態のまま水素電極基準
で−０．２〜＋０．８Ｖの電位或いは１０〜５０ｍＡ／
ｃｍ2 の電流を５〜６０秒間与えて表面処理を行う方法
によっても達成される。Further, the above object is to immerse a Cu alloy material, or a material to be plated having a dull Cu plating or a bright Cu plating, in a fluidized state of 10 to 200 g / l-alkali cyanide solution, In this immersed state, a potential of −0.2 to +0.8 V or 10 to 50 mA / based on the hydrogen electrode
It can also be achieved by a method of applying a current of cm 2 for 5 to 60 seconds to perform surface treatment.
【００１１】この方法によれば、１０〜２００ｇ／ｌ−
シアン化アルカリ塩の流動溶液に浸漬することにより溶
解速度を確保しながら液管理を容易にする。−０．２Ｖ
〜＋０．８Ｖの電位を付与することにより、めっき表面
の最外層が均一に溶解され、平坦な表面が形成される。
更に、電位付与を５秒〜６０秒とすることにより、十分
な処理がなされる。また、溶液を流動させることによ
り、溶解成分の再付着や溶解むらが生じるのが防止され
る。以上により、良好な平坦表面を得ることができる。According to this method, 10 to 200 g / l-
By immersing in a fluidized solution of an alkali cyanide salt, liquid management is facilitated while ensuring a dissolution rate. -0.2V
By applying a potential of +0.8 V, the outermost layer on the plating surface is uniformly dissolved and a flat surface is formed.
Further, by applying the potential for 5 seconds to 60 seconds, sufficient processing is performed. Further, by causing the solution to flow, it is possible to prevent redeposition of dissolved components and unevenness of dissolution. As described above, a good flat surface can be obtained.
【００１２】この場合、前記表面処理後にＣｕめっきを
施すことができる。このＣｕめっきにより、表面の光沢
処理が可能になる。また、前記被めっき材は、リードフ
レームにすることができる。本発明による処理は、表面
を均一に溶解し、平坦な表面が得られ、光沢メッキを施
しても表面平滑性及び密着性が損なわれない。したがっ
て、ワイヤボンディング性やダイボンディング性を要求
されるリードフレームに対して最適であり、最終的に設
けられる光沢めっきの表面平滑性及び密着性を向上さ
せ、ワイヤボンディング性やダイボンディング性を確保
することができる。In this case, Cu plating can be applied after the surface treatment. This Cu plating enables surface gloss treatment. Further, the material to be plated may be a lead frame. The treatment according to the present invention uniformly dissolves the surface to obtain a flat surface, and even if bright plating is applied, the surface smoothness and adhesion are not impaired. Therefore, it is most suitable for the lead frame that requires wire bonding property and die bonding property, and improves the surface smoothness and adhesion of the finally provided bright plating to secure the wire bonding property and the die bonding property. be able to.
【００１３】[0013]
【発明の実施の形態】本発明者らは、Ａｇ又はＣｕ系材
料、及びこれらにおけるめっき膜の表面処理工程におい
て、条件を選択することにより、素材及びめっき膜の表
面を極めて平滑に仕上がることを見出した。すなわち、
被めっき材に対し、脱脂及び酸洗を施した後、めっき液
に浸漬して無光沢めっきを施し、その後、電気めっきに
より無光沢メッキ又は半光沢Ａｇメッキを施した後、以
下に示す内容の表面処理を施し、この後、必要に応じて
光沢メッキが施される。 （ａ）液温、ｐＨ（ペーハー）、及び溶液：液温を２５
〜８０℃、ｐＨを１１〜１３、溶液を１０〜２００ｇ／
liter −シアン化アルカリ塩溶液（ＫＣＮ溶液）にす
る。 （ｂ）被めっき材の処理面に水素電極基準で−０．２〜
＋０．８Ｖのアノード電位、或いは１０〜５０ｍＡ／ｃ
ｍ2 のアノード電流を５〜６０秒間付与する。 （ｃ）被めっき材の処理面に対し、０．０５〜０．５ｍ
／ｓの流速を均一に付与する。BEST MODE FOR CARRYING OUT THE INVENTION The present inventors have made it possible to finish the surface of a material and a plating film to be extremely smooth by selecting conditions in the surface treatment process of Ag or Cu-based materials and the plating film on these materials. I found it. That is,
The material to be plated is degreased and pickled, then dipped in a plating solution to apply matte plating, and then electroplated to provide matte plating or semi-gloss Ag plating. A surface treatment is applied, and thereafter, bright plating is applied if necessary. (A) Liquid temperature, pH (pH), and solution: liquid temperature is 25
-80 ° C, pH 11-13, solution 10-200 g /
liter-Alkali cyanide solution (KCN solution). (B) −0.2 to the hydrogen electrode standard on the treated surface of the plated material
Anode potential of + 0.8V or 10-50mA / c
An anode current of m 2 is applied for 5 to 60 seconds. (C) 0.05 to 0.5 m with respect to the treated surface of the material to be plated
/ S is evenly applied.
【００１４】以上の設定理由は、大きな溶解反応が容易
に生じるシアン化物中において、限界拡散電流を示す電
位域における溶解反応であることから、最も平坦な表面
が得られる環境条件である。また、溶解生成物が非解離
性のシアン化物として補足されるので、被めっき材の表
面に再付着することが少ない。本発明者らは、この事実
が溶解の均一性及び溶解面の平坦性をもたらしているこ
とを見出したものである。The reason for the above setting is the environmental conditions under which the flattest surface can be obtained because the dissolution reaction is in the potential region showing the limiting diffusion current in cyanide in which a large dissolution reaction easily occurs. Further, since the dissolved product is captured as a non-dissociative cyanide, it is less likely to redeposit on the surface of the plated material. The present inventors have found that this fact brings about the uniformity of dissolution and the flatness of the dissolution surface.
【００１５】[0015]
【実施例】次に、本発明の実施例について説明する。こ
こでは、本発明による実施例と、従来技術による比較例
の２つを例示する。 実施例：〔４０秒の無光沢Ａｇめっき＋本発明による表
面処理（後記する）＋２０秒の光沢Ａｇめっき〕。Next, an embodiment of the present invention will be described. Here, two examples, that is, an example according to the present invention and a comparative example according to the related art will be illustrated. Example: [40 seconds of matte Ag plating + surface treatment according to the present invention (described later) +20 seconds of bright Ag plating].
【００１６】比較例：〔４０秒の無光沢Ａｇめっき＋２
０秒の光沢Ａｇめっき〕。ここで、本発明による表面処
理とは、Ａｇめっき膜の最外層表面を４０℃、２２０ｇ
／liter −ＫＣＮ溶液中に浸漬し、０．１ｍ／ｓの流速
を与え、水素電極基準で＋０．２Ｖの電位を１２秒間付
与した。比較例及び実施例におけるめっき時間とめっき
表面粗さの関係を示したのが図１であり、比較例及び実
施例において得られためっき面の走査電子顕微鏡写真を
示したのが図２及び図３である。Comparative Example: [40 second matte Ag plating +2
0 second bright Ag plating]. Here, the surface treatment according to the present invention means that the outermost layer surface of the Ag plating film is 40 ° C. and 220 g.
/ Liter-KCN solution, a flow rate of 0.1 m / s was applied, and a potential of +0.2 V based on the hydrogen electrode was applied for 12 seconds. FIG. 1 shows the relationship between plating time and plating surface roughness in Comparative Examples and Examples, and FIG. 2 and FIG. 2 show scanning electron micrographs of the plated surfaces obtained in Comparative Examples and Examples. It is 3.
【００１７】図３に示すように比較例のめっき表面は粗
い凹凸を有しているのに対し、図２に示すように実施例
のめっき表面は極めて平坦（滑らか）である。図３は実
線図示の無光沢めっきを行った後、続けて破線で示す様
に２０秒の光沢めっきを行って点１の時点で処理を終了
した場合であり、図２は無光沢めっき後、本発明による
表面処理を行い、この後、光沢めっきを別途実施し、点
２の時点で処理を終了した場合である。As shown in FIG. 3, the plated surface of the comparative example has rough irregularities, whereas the plated surface of the example is extremely flat (smooth) as shown in FIG. FIG. 3 shows a case where after the matte plating shown by the solid line is performed, subsequently, as shown by a broken line, the gloss plating is carried out for 20 seconds and the treatment is finished at the point 1, and FIG. This is a case where the surface treatment according to the present invention is performed, and thereafter, bright plating is separately performed and the treatment is finished at the point 2.
【００１８】図１より明らかなように、無光沢Ａｇめっ
きでは、めっき表面粗さがめっき時間に比例して増大し
ている。これに対し、比較例においては、その後に光沢
Ａｇめっきを施すことにより表面に光沢は出るものの、
表面粗さは若干低下する。一方、本発明による実施例で
は、上記した本発明処理を加えることにより、表面粗さ
が溶解して粗さが改善され、極めて平坦（平滑）な表面
を得ることができる。そして、その後、比較例と同様な
光沢Ａｇめっきを与えることにより、僅かにめっき表面
粗さが増大している。すなわち、同じ光沢Ａｇめっきを
与える場合でも、その時点における下地の表面状況が極
めて重要な意味を持ち、本発明における表面処理が重大
な効果を生んでいることがわかる。As is apparent from FIG. 1, in the matte Ag plating, the plating surface roughness increases in proportion to the plating time. On the other hand, in the comparative example, after the gloss Ag plating is applied, the surface becomes glossy,
The surface roughness is slightly reduced. On the other hand, in the example according to the present invention, by adding the above-described treatment of the present invention, the surface roughness is dissolved and the roughness is improved, and an extremely flat (smooth) surface can be obtained. Then, after that, by providing the same bright Ag plating as in the comparative example, the plating surface roughness is slightly increased. That is, even when the same gloss Ag plating is applied, the surface condition of the base material at that time has a very important meaning, and it is understood that the surface treatment in the present invention produces a significant effect.
【００１９】更に、本発明者は、４２アロイ製のリード
フレームに対し、本発明を適用してＡｇめっき膜を形成
した。この結果、ダイボンディング性及びワイヤボンデ
ィング性における信頼性及び接着強度が末処理品に比べ
極めて優れていることを確認した。また、当初から光沢
剤入りのめっき薬品を用いて上記実施例による方法でめ
っき膜を形成したところ、膜内に不純物の含有が認めら
れた。更に、硬質膜が形成され、ダイボンディング性及
びワイヤボンディング性が著しく低下することが確認さ
れた。また、めっき時間が本発明方法に比べ、３倍の時
間を必要とした。Further, the present inventor applied the present invention to a lead frame made of 42 alloy to form an Ag plating film. As a result, it was confirmed that the reliability of the die bonding property and the wire bonding property and the adhesive strength were extremely superior to those of the untreated product. Further, when a plating film was formed from the beginning by using the plating chemical containing a brightening agent by the method according to the above-mentioned example, inclusion of impurities was recognized in the film. Further, it was confirmed that a hard film was formed and die bonding property and wire bonding property were significantly lowered. Further, the plating time required three times as long as that of the method of the present invention.
【００２０】そして、素材がＡｇ、Ｃｕ合金のいずれで
あっても、また、Ａｇめっき膜、Ｃｕめっき膜のいずれ
であっても、本発明による効果に相違は見られなかっ
た。例えば、従来技術により、シアンＣｕめっき液を用
い、Ｃｕ合金リードフレーム素材の表面に０．３μｍの
Ｃｕストライクめっき膜を形成した。その後、３μｍの
厚みに無光沢めっき膜を形成した。また、他の例として
３０℃、２０ｇ／liter−ＫＣＮ溶液中に浸漬し、０．
１ｍ／ｓの流速を与え、水素電極基準で＋０．１Ｖの電
位を５秒間付与し、更に無光沢Ａｇめっき膜を３μｍの
厚みに形成した本発明による試料も作成した。No difference was found in the effects of the present invention regardless of whether the material was Ag or Cu alloy, Ag plating film or Cu plating film. For example, according to a conventional technique, a cyan Cu plating solution was used to form a Cu strike plating film of 0.3 μm on the surface of a Cu alloy lead frame material. After that, a matte plating film was formed to a thickness of 3 μm. Further, as another example, it was immersed in a 20 g / liter-KCN solution at 30 ° C.
A sample according to the present invention was also prepared in which a flow rate of 1 m / s was applied, a potential of +0.1 V was applied for 5 seconds on the basis of a hydrogen electrode, and a matte Ag plating film was formed to a thickness of 3 μm.
【００２１】このようにして作成した各試料をダイボン
ディング作業に準じて３５０℃のホットプレート上に５
分間さらして急速に加熱し、Ａｇめっき膜の膨れ発生状
況を観察した。その結果、前者の試料では２５％の微小
膨れが生じたが、後者の試料は０％であった。このよう
に、本発明によれば、Ｃｕストライクめっき膜の表面を
平滑にできるので、その後におけるＡｇめっき膜の緻密
さを改良できることは明らかである。Each sample prepared in this manner was placed on a hot plate at 350 ° C. according to a die bonding process.
It was exposed for a minute and heated rapidly, and the swelling occurrence state of the Ag plating film was observed. As a result, the former sample had 25% micro-swelling, while the latter sample had 0%. As described above, according to the present invention, since the surface of the Cu strike plating film can be made smooth, it is clear that the denseness of the Ag plating film after that can be improved.
【００２２】次に、本発明の最適条件について説明す
る。 （ｉ）液温度：２５〜８０℃の範囲内に設定する。液温
度が２５℃以下では溶解速度が小さくなり、実用的では
ない。また、８０℃以上では液の蒸発が多くプロセス管
理が困難になる。 （ii）ｐＨ：１１〜１３の範囲内に設定する。ｐＨが１
１以下の場合にはシアン化アルカリの安定性に欠け、液
管理が困難になる。また、ｐＨが１３以上ではシアンに
よる錯化反応のみが生じる反応電位域が減少し、実作業
性が悪くなる。 (iii) シアン化アルカリ塩濃度：１０〜２００ｇ／lite
r の範囲内に設定する。１０ｇ／liter 以下では、溶解
速度がシアン濃度に正比例であるため、溶解速度が低下
し、実用的ではない。一方、２００ｇ／liter 以上で
は、プロセス構成に伴う処理液の持ち込み、持ち出しに
おける液管理が困難になり、実用的ではない。 （iv）処理電位：水素電極基準で−０．２Ｖ〜＋０．８
Ｖの範囲内に設定する。アノード電位は末溶解反応がＡ
ｇ及びＣｕのシアン化アルカリ塩溶液中における錯化作
用に依存しているので、その溶解反応域が正確に水素電
極基準で−０．２Ｖ〜＋０．８Ｖの限界拡散電流域に一
致したときにのみ表面最外層が平坦に溶解する。したが
って、−０．２Ｖ以下では溶解反応速度が小さく、シア
ンイオン或いは溶解成分の拡散過程が律速度過程になら
ないので、正確に最外層のみが溶解する必然性を満足せ
ず、平坦な溶解表面は得られない。また、＋０．８Ｖ以
上では、シアンの錯化反応以外のＡｇの直接溶解反応
（シアン化溶解に基づかないＡｇＯ- イオン生成）や酸
素発生反応が生じて酸化物が形成されるなどし、同様に
平坦な溶解表面が得られない。 （Ｖ）処理電流：１０〜５０ｍＡ／ｃｍ2 のアノード電
流範囲に設定する。この電流設定は、上記の処理電位設
定に対応して一義的に決定されるもので、本発明の必要
条件ではない。ただし、電源が定電流電源の場合には、
利用が困難であるものの、利用できないわけではない。 （vi）処理時間：５〜６０秒の範囲で設定する。５秒以
下では処理が不十分になりやすい。一方、６０秒以上で
は表面の凹凸が目立つようになるので、実用的ではな
い。 (vii) 流速を付与する理由：０．０５〜０．５ｍ／秒の
範囲内に設定する。０．０５ｍ／秒以下では溶解成分が
被処理面に再付着し、表面を汚染しやすい。また、０．
５ｍ／秒以上ではリードフレーム本体の固定が困難にな
る。また、流れの乱れに沿った溶解むらが生じ易くな
る。Next, the optimum conditions of the present invention will be described. (I) Liquid temperature: Set within the range of 25 to 80 ° C. When the liquid temperature is 25 ° C. or lower, the dissolution rate becomes low, which is not practical. Further, when the temperature is 80 ° C. or higher, the amount of liquid is evaporated and the process control becomes difficult. (Ii) pH: Set within the range of 11-13. pH is 1
When it is 1 or less, the stability of the alkali cyanide is insufficient, and the liquid management becomes difficult. On the other hand, when the pH is 13 or more, the reaction potential region where only the complexation reaction with cyan occurs is reduced, and the actual workability deteriorates. (iii) Alkali cyanide salt concentration: 10 to 200 g / lite
Set within the range of r. When it is 10 g / liter or less, the dissolution rate is directly proportional to the cyan concentration, so that the dissolution rate decreases, which is not practical. On the other hand, when it is 200 g / liter or more, it is not practical because it becomes difficult to manage the liquid when bringing in and taking out the processing liquid due to the process configuration. (Iv) Treatment potential: -0.2 V to +0.8 based on the hydrogen electrode
Set within the range of V. As for the anode potential, the undissolved reaction is A
Since it depends on the complexing action of g and Cu in the alkali cyanide solution, when the dissolution reaction region exactly coincides with the limiting diffusion current region of −0.2 V to +0.8 V on the basis of the hydrogen electrode. Only the outermost layer on the surface melts flat. Therefore, at −0.2 V or less, the dissolution reaction rate is low, and the diffusion process of cyan ions or dissolved components does not become the rate-determining process. Therefore, it is not necessary to accurately dissolve only the outermost layer, and a flat dissolution surface is obtained. I can't. Further, at +0.8 V or higher, a direct dissolution reaction of Ag (AgO − ion generation not based on cyanide dissolution) or an oxygen generation reaction other than the cyanation complexation reaction occurs to form an oxide. No flat melt surface can be obtained. (V) Treatment current: set to an anode current range of 10 to 50 mA / cm 2 . This current setting is uniquely determined corresponding to the above processing potential setting and is not a necessary condition of the present invention. However, if the power supply is a constant current power supply,
Although difficult to use, it does not mean that you cannot use it. (Vi) Processing time: Set within a range of 5 to 60 seconds. If it is 5 seconds or less, the treatment tends to be insufficient. On the other hand, if it is 60 seconds or more, the irregularities on the surface become noticeable, which is not practical. (vii) Reason for giving a flow velocity: Set within the range of 0.05 to 0.5 m / sec. When it is less than 0.05 m / sec, the dissolved components are reattached to the surface to be treated and the surface is easily contaminated. Also, 0.
If it is 5 m / sec or more, it becomes difficult to fix the lead frame body. In addition, uneven melting tends to occur along the flow turbulence.
【００２３】[0023]
【発明の効果】以上説明した通り、本発明は、溶解によ
り素材またはめっき面を均一に溶解でき、めっき面の表
面粗さを小さくすることができる。また、被めっき材が
リードフレームの場合、ワイヤボンディング性、ダイボ
ンディング性を高めることができる。As described above, according to the present invention, the material or the plated surface can be uniformly melted by melting, and the surface roughness of the plated surface can be reduced. In addition, when the material to be plated is a lead frame, wire bondability and die bondability can be improved.
【図１】本発明及び従来のめっき時間とめっき表面粗さ
の関係を示す特性図である。FIG. 1 is a characteristic diagram showing a relationship between plating time and plating surface roughness according to the present invention and the related art.
【図２】本発明によるメッキ処理工程を経ためっき面の
走査電子顕微鏡による、図面に代わる顕微鏡写真であ
る。FIG. 2 is a scanning electron microscope photograph of a plated surface that has undergone a plating process according to the present invention, which is a micrograph in place of a drawing.
【図３】従来技術によるメッキ処理工程を経ためっき面
の走査電子顕微鏡による、図面に代わる顕微鏡写真であ
る。FIG. 3 is a scanning electron microscope photograph of a plated surface that has undergone a plating process according to a conventional technique, which is a micrograph in place of a drawing.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉田 和章 茨城県日立市助川町３丁目１番１号 日立 電線株式会社電線工場内 (72)発明者 小泉 良一 茨城県日立市助川町３丁目１番１号 日立 電線株式会社電線工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Kazuaki Yoshida 3-1-1 Sukegawa-cho, Hitachi City, Ibaraki Hitachi Cable Company, Ltd. (72) Inventor Ryoichi Koizumi 3-1-1 Sukegawa-cho, Hitachi City, Ibaraki Prefecture No. 1 inside the electric wire factory of Hitachi Cable Ltd.
Claims (6)
された被めっき材を流動状態にある１０〜２００ｇ／ｌ
−シアン化アルカリ塩溶液に浸漬し、 前記浸漬状態のまま水素電極基準で−０．２〜＋０．８
Ｖの電位或いは１０〜５０ｍＡ／ｃｍ2 の電流を５〜６
０秒間付与して表面処理を行うことを特徴とするめっき
膜の表面処理方法。1. A material to be plated, which has been subjected to matte Ag plating or bright Ag plating, in a fluid state of 10 to 200 g / l.
-Immersion in an alkali cyanide salt solution, -0.2 to +0.8 on the basis of the hydrogen electrode in the immersed state.
V potential or current of 10-50mA / cm 2 is 5-6
A surface treatment method for a plating film, which comprises applying the surface treatment for 0 second.
特徴とする請求項１記載のめっき膜の表面処理方法。2. The surface treatment method for a plating film according to claim 1, wherein Ag plating is applied after the surface treatment.
ことを特徴とする請求項１記載のめっき膜の表面処理方
法。3. The surface treatment method for a plating film according to claim 1, wherein the material to be plated is a lead frame.
沢Ｃｕめっきが施された被めっき材を流動状態にある１
０〜２００ｇ／ｌ−シアン化アルカリ塩溶液に浸漬し、 前記浸漬状態のまま水素電極基準で−０．２〜＋０．８
Ｖの電位或いは１０〜５０ｍＡ／ｃｍ2 の電流を５〜６
０秒間付与して表面処理を行うことを特徴とするめっき
膜の表面処理方法。4. A Cu alloy material or a material to be plated on which a dull Cu plating or a bright Cu plating is applied is in a fluidized state.
It is dipped in a solution of 0 to 200 g / l-alkali cyanide, and in the dipped state, it is -0.2 to +0.8 based on the hydrogen electrode.
V potential or current of 10-50mA / cm 2 is 5-6
A surface treatment method for a plating film, which comprises applying the surface treatment for 0 second.
特徴とする請求項４記載のめっき膜の表面処理方法。5. The surface treatment method for a plating film according to claim 4, wherein Cu plating is performed after the surface treatment.
ことを特徴とする請求項４記載のめっき膜の表面処理方
法。6. The method for surface treatment of a plated film according to claim 4, wherein the material to be plated is a lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9029596A JPH09256200A (en) | 1996-03-19 | 1996-03-19 | Plating film surface treatment method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9029596A JPH09256200A (en) | 1996-03-19 | 1996-03-19 | Plating film surface treatment method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09256200A true JPH09256200A (en) | 1997-09-30 |
Family
ID=13994554
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9029596A Pending JPH09256200A (en) | 1996-03-19 | 1996-03-19 | Plating film surface treatment method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09256200A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002121698A (en) * | 2000-10-13 | 2002-04-26 | Sony Corp | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| JP2007254855A (en) * | 2006-03-24 | 2007-10-04 | Dowa Holdings Co Ltd | Silver plated metal member for electronic parts and method for producing the same |
-
1996
- 1996-03-19 JP JP9029596A patent/JPH09256200A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002121698A (en) * | 2000-10-13 | 2002-04-26 | Sony Corp | Semiconductor manufacturing apparatus and semiconductor device manufacturing method |
| JP2007254855A (en) * | 2006-03-24 | 2007-10-04 | Dowa Holdings Co Ltd | Silver plated metal member for electronic parts and method for producing the same |
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