JPH09256156A - Film forming device - Google Patents
Film forming deviceInfo
- Publication number
- JPH09256156A JPH09256156A JP9016996A JP9016996A JPH09256156A JP H09256156 A JPH09256156 A JP H09256156A JP 9016996 A JP9016996 A JP 9016996A JP 9016996 A JP9016996 A JP 9016996A JP H09256156 A JPH09256156 A JP H09256156A
- Authority
- JP
- Japan
- Prior art keywords
- substrate holder
- vapor deposition
- substrate
- electrode
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 238000007740 vapor deposition Methods 0.000 claims abstract description 55
- 125000006850 spacer group Chemical group 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims 2
- 239000012528 membrane Substances 0.000 claims 1
- 238000001704 evaporation Methods 0.000 abstract description 8
- 239000000463 material Substances 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 27
- 239000013078 crystal Substances 0.000 description 23
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008020 evaporation Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、成膜装置に関する
ものである。[0001] The present invention relates to a film forming apparatus.
【0002】[0002]
【従来の技術】基板の表面に金属薄膜を形成して電極や
回路パターンとして使用することや圧電基板に薄膜の励
振電極を設け、電極に交流をかけて共振させ基準周波数
源とすることは古くから行われている。圧電セラミック
スやピエゾ効果を有する単結晶に薄膜の励振電極を設け
て振動子として使用している例が多いが、金属薄膜の成
膜は真空槽内に振動片を適当な治具で配置し、蒸着やス
パッタリング等の手法で行われている。基板に何を使用
するか、成膜材料に何を使用するかは薄膜を形成するに
おいては単なる選択事項なので、以下では例示としてA
Tカット水晶振動子の電極成膜を真空蒸着法で行う場合
を想定して説明するが例示に限定されるものではない。2. Description of the Related Art It is old to form a metal thin film on the surface of a substrate and use it as an electrode or a circuit pattern, or to provide a thin film excitation electrode on a piezoelectric substrate and apply alternating current to the electrode to cause resonance to serve as a reference frequency source. Has been done from. In many cases, a thin film excitation electrode is provided on a piezoelectric ceramic or a single crystal having a piezo effect to be used as a vibrator, but for film formation of a metal thin film, a vibrating piece is placed in an appropriate jig in a vacuum chamber, It is performed by methods such as vapor deposition and sputtering. What is used for the substrate and what is used for the film-forming material are merely choices in forming a thin film, and therefore, in the following, as an example,
The description will be made assuming that the electrode formation of the T-cut crystal unit is performed by the vacuum deposition method, but the present invention is not limited to the example.
【0003】図11はシリンダ型容器に収納されたAT
カット水晶振動子の斜視図である。ATカット水晶振動
子は2本のリード端子5を有する気密端子4と水晶振動
片2と金属カバー1で構成されており、水晶振動片2に
は電極3が形成されている。ATカット水晶振動子は水
晶原石を所望するATカット水晶振動片2に加工する工
程、水晶振動片2に電極3を成膜する工程、気密端子4
のリード端子5に水晶振動片2を固定するマウント工
程、所望する周波数に合わせ込む調整工程、金属カバー
1で水晶振動片2を気密封止する工程からなる。FIG. 11 shows an AT housed in a cylinder type container.
It is a perspective view of a cut crystal oscillator. The AT-cut crystal resonator is composed of an airtight terminal 4 having two lead terminals 5, a crystal vibrating piece 2 and a metal cover 1, and an electrode 3 is formed on the crystal vibrating piece 2. The AT-cut crystal unit is a step of processing a raw quartz crystal into a desired AT-cut crystal vibrating piece 2, a step of forming an electrode 3 on the crystal vibrating piece 2, a hermetic terminal 4.
The mounting step of fixing the crystal vibrating piece 2 to the lead terminal 5, the adjusting step of adjusting to the desired frequency, and the step of hermetically sealing the crystal vibrating piece 2 with the metal cover 1.
【0004】水晶振動片に電極を成膜する工程は、電気
信号を取りだすための励振電極を形成することを主たる
目的にしているが、同時にその振動周波数の粗調整をす
ることも目的としている。水晶振動片の表面上に質量が
一様に付加すると、その振動周波数が減少する特性があ
ることが知られている。前記の電極を成膜する工程でも
電極膜という質量が水晶振動片に付加されることでその
振動周波数が減少する。この減少する量を電極降下量あ
るいはプレートバック量という。プレートバック量は電
極膜の面積、密度、膜厚及び水晶振動片の大きさ、周波
数等によって異なる。電極膜の材料としては、銀、金、
ニッケル、アルミニウム、パラジウム等が使用され、用
途によってはクロムやチタンを下地にし、その上に前記
電極材を積層することもある。In the step of forming an electrode on the quartz crystal vibrating piece, the main purpose is to form an exciting electrode for taking out an electric signal, but at the same time, it is also an object to roughly adjust the vibration frequency. It is known that when a mass is uniformly applied on the surface of a quartz-crystal vibrating piece, its vibration frequency has a characteristic of decreasing. In the step of forming the electrode, the mass of the electrode film is added to the quartz crystal vibrating piece to reduce its vibration frequency. This decreasing amount is called an electrode drop amount or a plate back amount. The plate back amount varies depending on the area, density, film thickness of the electrode film, the size of the crystal vibrating piece, the frequency, and the like. The material of the electrode film is silver, gold,
Nickel, aluminum, palladium or the like is used, and depending on the application, chrome or titanium may be used as a base and the electrode material may be laminated thereon.
【0005】図1は従来技術による真空蒸着機内部の模
式を示す正面図である。蒸着室6にはATカット水晶振
動片(以下、ワーク振動子という)2に電極3を蒸着す
るための蒸着源7を有している。蒸着材料8は適宜前述
の材料から選ばれる。蒸着源7の上部にワークであるワ
ーク振動子2を多数整列収納した基板ホルダー9とプレ
ートバック量を制御するための膜厚モニター11が配置
されている。膜厚モニター11にはモニター水晶12が
あり、発振器13に接続されている。モニター水晶12
の振動周波数の変化を読み取り演算して、制御装置14
により蒸着速度、膜厚を管理している。基板ホルダー9
は蒸着治具10によりガイド固定されている。蒸着治具
10は宙に浮いた状態で記載されているが後述する機能
を持たせて設置されており、図では省略してある。図2
は真空蒸着機内部の模式を示す底面図である。蒸着治具
10は10基配置されており、全体が矢印の方向に回転
する。FIG. 1 is a front view showing the inside of a conventional vacuum vapor deposition machine. The vapor deposition chamber 6 has a vapor deposition source 7 for vapor-depositing the electrode 3 on the AT-cut quartz crystal vibrating piece (hereinafter referred to as a work oscillator) 2. The vapor deposition material 8 is appropriately selected from the above-mentioned materials. Above the vapor deposition source 7, a substrate holder 9 in which a large number of work vibrators 2 as works are arranged and housed, and a film thickness monitor 11 for controlling the plate back amount are arranged. The film thickness monitor 11 has a monitor crystal 12 and is connected to an oscillator 13. Monitor crystal 12
The change in the vibration frequency of the
The vapor deposition rate and film thickness are controlled by. Board holder 9
Is fixed to the guide by the vapor deposition jig 10. Although the vapor deposition jig 10 is described in a state of floating in the air, it is installed with a function described later, and is omitted in the drawing. FIG.
[Fig. 3] is a bottom view showing the inside of the vacuum vapor deposition machine. Ten vapor deposition jigs 10 are arranged, and the whole is rotated in the direction of the arrow.
【0006】ワーク振動子2に電極3を成膜する工程
は、電気信号を取りだすための励振電極を形成すること
を主たる目的にしているが、同時にその振動周波数を粗
調整し、一定の狙い値に入れることも目的としている。
成膜後のワーク振動子2の振動周波数のバラツキは、そ
の電極膜厚のバラツキによって大きく影響を受けるか
ら、蒸着室6内のワーク振動子2の電極膜厚はできるだ
け均一にする必要がある。図1に示すように蒸着源7が
蒸着室6の下部中央にある場合は、基板ホルダー9を蒸
着源7の等膜厚面に配置することで比較的分布の良い成
膜が可能である。しかし蒸着材料を数種類使用するため
に蒸着源7がいくつもある場合(蒸着源を中央に配置で
きない)や、蒸着源が点でなく線状の場合は等膜厚面が
得られないため、蒸着治具10を回転することで全体
(10基の蒸着治具)の成膜条件を同じにする。In the process of forming the electrode 3 on the work vibrator 2, the main purpose is to form an excitation electrode for extracting an electric signal, but at the same time, the vibration frequency is roughly adjusted to a constant target value. It is also intended to put in.
Since the variation of the vibration frequency of the work vibrator 2 after the film formation is greatly influenced by the variation of the electrode film thickness, it is necessary to make the electrode film thickness of the work vibrator 2 in the vapor deposition chamber 6 as uniform as possible. When the vapor deposition source 7 is located in the lower center of the vapor deposition chamber 6 as shown in FIG. 1, by disposing the substrate holder 9 on the uniform film thickness surface of the vapor deposition source 7, a film having a relatively good distribution can be formed. However, if there are multiple evaporation sources 7 because they use several kinds of evaporation materials (the evaporation sources cannot be arranged in the center), or if the evaporation sources are linear rather than dots, it is not possible to obtain a uniform film thickness surface. By rotating the jig 10, the film forming conditions of the whole (10 vapor deposition jigs) are made the same.
【0007】ワーク振動子2の両面に同じ成膜をするた
めに基板ホルダー9も回転させる。蒸着源7と基板ホル
ダー9を結ぶ線に直交するように基板ホルダー9を回転
させることでワーク振動子2の両面に同じ成膜をするこ
とができる。図3は基板ホルダーの一例であり正面図と
側面図である。下板15、電極形成用マスク16、1
8、基板ガイド用スペーサー17、上板19、固定用ネ
ジ20で構成されている。蒸着は真空排気を伴い、一回
のサイクルが長いものであり、基板ホルダー9にはでき
るだけ多くのワーク振動子2を収納したい。図4は図3
のAA断面図であり符号は図3と共通である。The substrate holder 9 is also rotated in order to form the same film on both surfaces of the work vibrator 2. By rotating the substrate holder 9 so as to be orthogonal to the line connecting the vapor deposition source 7 and the substrate holder 9, the same film can be formed on both surfaces of the work vibrator 2. FIG. 3 is an example of a substrate holder, and is a front view and a side view. Lower plate 15, mask 16 for electrode formation, 1
8, a substrate guide spacer 17, an upper plate 19, and a fixing screw 20. The vapor deposition involves evacuation and one cycle is long, and it is desirable to store as many work vibrators 2 in the substrate holder 9 as possible. FIG. 4 shows FIG.
3 is a sectional view taken along line AA of FIG.
【0008】図5は蒸着治具10に基板ホルダー9をセ
ットした正面図と側面図である。基板ホルダー9は外形
のみ点線で示している。基板ホルダー9は蒸着治具10
のガイド部21に図の上部から差し込まれる。この状態
で図の矢印のように蒸着治具10が回転する。図6は図
5のBB断面図である。FIG. 5 is a front view and a side view in which the substrate holder 9 is set on the vapor deposition jig 10. Only the outer shape of the substrate holder 9 is shown by a dotted line. The substrate holder 9 is a vapor deposition jig 10.
It is inserted into the guide part 21 from above in the figure. In this state, the vapor deposition jig 10 rotates as shown by the arrow in the figure. FIG. 6 is a BB sectional view of FIG.
【0009】[0009]
【発明が解決しようとする課題】図4で示したように、
基板ホルダーは下板15と上板19が桟の如く上下に突
出している。また図6に示したように蒸着治具のガイド
部はさらに突出した構造になっている。図7は蒸着源7
と蒸着治具10、基板ホルダー9の回転時の位置関係を
示す模式図である。ガイド部21により、蒸発物がAか
らBまでの角θ1だけ回転する間は遮蔽され、基板ホル
ダーの中でもワーク振動子の配置される位置により成膜
条件が変わることが判る。ガイド部21が厚いほど影響
が大きくなる。これは下板15と上板19の厚みも同じ
ことがいえる。あるワーク振動子2と蒸着源7の間に遮
蔽物が存在すると、遮蔽物のないワーク振動子と蒸着条
件が変わる。蒸着膜厚により振動周波数が変わる水晶振
動子としてはバラツキの要因となっている。また、蒸着
の効率も悪い。DISCLOSURE OF THE INVENTION Problems to be Solved by the Invention As shown in FIG.
In the substrate holder, the lower plate 15 and the upper plate 19 project vertically like a crosspiece. Further, as shown in FIG. 6, the guide portion of the vapor deposition jig has a structure further protruding. FIG. 7 shows a vapor deposition source 7.
FIG. 3 is a schematic diagram showing a positional relationship when the vapor deposition jig 10 and the substrate holder 9 are rotated. It can be seen that the guide portion 21 shields the evaporated material while it rotates by the angle θ 1 from A to B, and that the film forming conditions change depending on the position where the work vibrator is arranged in the substrate holder. The thicker the guide portion 21, the greater the influence. It can be said that the thicknesses of the lower plate 15 and the upper plate 19 are the same. If a shield exists between a certain work vibrator 2 and the vapor deposition source 7, the work vibrator without a shield and the vapor deposition conditions change. This is a cause of variations in a crystal unit whose vibration frequency changes depending on the thickness of the deposited film. Also, the efficiency of vapor deposition is poor.
【0010】[0010]
【課題を解決するための手段】蒸着室と、蒸着室の下部
に設置される蒸着源と、蒸着源の上部に設置され膜が形
成される基板を整列固定する基板ホルダーと、該基板ホ
ルダーをガイド固定し該基板ホルダーを蒸着源の上部で
自転公転させる蒸着治具と、基板に形成される膜厚を監
視する膜厚モニターと、該膜厚モニターの情報により蒸
着源をコントロールする制御装置により構成される成膜
装置において、前記蒸着源と前記基板ホルダーに固定さ
れた基板の間には蒸発物を遮蔽するものが存在しない構
造とする。A vapor deposition chamber, a vapor deposition source installed in the lower portion of the vapor deposition chamber, a substrate holder arranged above the vapor deposition source for aligning and fixing a substrate on which a film is formed, and the substrate holder With a vapor deposition jig that fixes the guide and revolves the substrate holder above the vapor deposition source, a film thickness monitor that monitors the film thickness formed on the substrate, and a controller that controls the vapor deposition source based on the information from the film thickness monitor. In the film forming apparatus configured, there is no structure that shields the evaporated material between the vapor deposition source and the substrate fixed to the substrate holder.
【0011】基板ホルダーは少なくとも2枚の電極形成
用マスクと基板ガイド用スペーサーで構成され、少なく
とも1枚の電極形成用マスクの表面には突起物がない基
板ホルダーを使用する。The substrate holder is composed of at least two electrode forming masks and a substrate guide spacer, and at least one electrode forming mask has no protrusions on the surface.
【0012】[0012]
【発明の実施の形態】図8は蒸着治具、基板ホルダーが
遮蔽物とならない構造の実施の形態であり、正面図と側
面図。筐体22は回転せず、基板ホルダー9は基板ホル
ダー固定具24、25により固定される。基板ホルダー
固定具24は筐体22に回転可能に取付けられ、基板ホ
ルダー固定具25は回転駆動軸23に軸方向にスライド
できる構造で取付けられている。FIG. 8 is a front view and a side view showing an embodiment of a structure in which a vapor deposition jig and a substrate holder do not serve as shields. The housing 22 does not rotate, and the substrate holder 9 is fixed by the substrate holder fixing tools 24 and 25. The substrate holder fixing tool 24 is rotatably attached to the housing 22, and the substrate holder fixing tool 25 is attached to the rotation drive shaft 23 in a structure capable of sliding in the axial direction.
【0013】図9は2枚の電極形成用マスク30、31
と基板ガイド用スペーサー32で構成された基板ホルダ
ーであり正面図と側面図である。電極形成用マスク30
にはガイドピン33が植設され、基板ガイド用スペーサ
ー32と電極形成用マスク31の位置決めに使用され
る。電極形成用マスク30と31はお互いに吸着するよ
うに磁化されている。FIG. 9 shows two masks 30 and 31 for forming electrodes.
FIG. 3 is a front view and a side view of a substrate holder including a substrate guide spacer 32. FIG. Electrode forming mask 30
A guide pin 33 is implanted in the substrate and is used for positioning the substrate guide spacer 32 and the electrode forming mask 31. The electrode forming masks 30 and 31 are magnetized so as to be attracted to each other.
【0014】図10は本発明の実施による蒸発源と基板
ホルダー回転時の位置関係を示す模式図である。基板ホ
ルダー、蒸着治具とも電極形成用マスク以上の遮蔽物と
はならない構造となっているので、基板ホルダーの厚み
の分(A’からB’までの角θ2)だけの少ない遮蔽で
すむ。従来のθ1よりはるかに小さい。FIG. 10 is a schematic diagram showing the positional relationship when the evaporation source and the substrate holder are rotated according to the embodiment of the present invention. Since both the substrate holder and the evaporation jig have a structure that does not become a shield more than the mask for electrode formation, only a portion of the thickness of the substrate holder (angle θ 2 from A ′ to B ′) is enough for shielding. It is much smaller than the conventional θ 1 .
【0015】[0015]
【発明の効果】本発明によれば、基板ホルダー、蒸着治
具とも電極形成用マスク以上の遮蔽物とはならない構造
となっているので、ワーク振動子(基板)が基板ホルダ
ーのどの位置にあっても同じ成膜条件とすることができ
るし、蒸着も有効に行える。According to the present invention, since the substrate holder and the vapor deposition jig are structured so as not to be a shield more than the electrode forming mask, the work vibrator (substrate) is located at any position of the substrate holder. However, the same film forming conditions can be used, and vapor deposition can be effectively performed.
【図1】従来技術による真空蒸着機内部の模式を示す正
面図。FIG. 1 is a front view showing a schematic inside of a vacuum vapor deposition machine according to a conventional technique.
【図2】真空蒸着機内部の模式を示す底面図。FIG. 2 is a bottom view schematically showing the inside of a vacuum vapor deposition machine.
【図3】従来技術による基板ホルダーの正面図と側面
図。FIG. 3 is a front view and a side view of a conventional substrate holder.
【図4】図3のAA断面図。FIG. 4 is a sectional view taken along line AA of FIG.
【図5】蒸着治具に基板ホルダーをセットした正面図と
側面図。FIG. 5 is a front view and a side view in which a substrate holder is set on a vapor deposition jig.
【図6】図5のBB断面図。6 is a cross-sectional view taken along the line BB of FIG.
【図7】蒸着源と蒸着治具、基板ホルダーの位置関係を
示す模式図。FIG. 7 is a schematic diagram showing a positional relationship between a vapor deposition source, a vapor deposition jig, and a substrate holder.
【図8】本発明による蒸着治具に基板ホルダーをセット
した正面図と側面図。FIG. 8 is a front view and a side view in which a substrate holder is set on a vapor deposition jig according to the present invention.
【図9】本発明用の基板ホルダー。FIG. 9 is a substrate holder for the present invention.
【図10】本発明による蒸着源と蒸着治具、基板ホルダ
ーの位置関係を示す模式図。FIG. 10 is a schematic diagram showing a positional relationship between a vapor deposition source, a vapor deposition jig, and a substrate holder according to the present invention.
【図11】ATカット水晶振動子の斜視図。FIG. 11 is a perspective view of an AT-cut crystal unit.
1 金属カバー 2 水晶片 3 電極 4 気密端子 5 リード端子 6 蒸着室 7 蒸着源 8 ワーク振動子 9 基板ホルダー 10 蒸着治具 11 膜厚モニター 12 モニター水晶 13 発振器 14 制御装置 15 下板 16 電極形成用マスク 17 基板ガイド用スペーサー 18 電極形成用マスク 19 上板 20 固定用ネジ 21 ガイド部 22 筐体 23 回転駆動軸 24 基板ホルダー固定具 25 基板ホルダー固定具 30 電極形成用マスク 31 電極形成用マスク 32 基板ガイド用スペーサー 33 ガイドピン 1 Metal Cover 2 Crystal Piece 3 Electrode 4 Airtight Terminal 5 Lead Terminal 6 Deposition Chamber 7 Deposition Source 8 Work Vibrator 9 Substrate Holder 10 Deposition Tool 11 Film Thickness Monitor 12 Monitor Crystal 13 Oscillator 14 Controller 15 Lower Plate 16 For Electrode Formation Mask 17 Substrate guide spacer 18 Electrode forming mask 19 Upper plate 20 Fixing screw 21 Guide portion 22 Housing 23 Rotation drive shaft 24 Substrate holder fixing tool 25 Substrate holder fixing tool 30 Electrode forming mask 31 Electrode forming mask 32 Substrate Spacer for guide 33 Guide pin
Claims (2)
着源と、蒸着源の上部に設置され膜が形成される基板を
整列固定する基板ホルダーと、該基板ホルダーをガイド
固定し該基板ホルダーを蒸着源の上部で自転公転させる
蒸着治具と、基板に形成される膜厚を監視する膜厚モニ
ターと、該膜厚モニターの情報により蒸着源をコントロ
ールする制御装置により構成される成膜装置において、
前記蒸着源と前記基板ホルダーに固定された基板の間に
は蒸発物を遮蔽するものが存在しないことを特徴とする
成膜装置。1. A vapor deposition chamber, a vapor deposition source installed at a lower portion of the vapor deposition chamber, a substrate holder disposed above the vapor deposition source for aligning and fixing a substrate on which a film is to be formed, and the substrate holder being fixed as a guide. It consists of a vapor deposition jig that revolves the substrate holder above the vapor deposition source, a film thickness monitor that monitors the film thickness formed on the substrate, and a controller that controls the vapor deposition source based on the information from the film thickness monitor. In the membrane device,
A film forming apparatus, characterized in that there is no substance that shields an evaporated substance between the vapor deposition source and the substrate fixed to the substrate holder.
成用マスクと基板ガイド用スペーサーで構成され、少な
くとも1枚の電極形成用マスクの表面には突起物がない
基板ホルダーを使用することを特徴とする請求項1記載
の成膜装置。2. The substrate holder comprises at least two electrode forming masks and a substrate guide spacer, and at least one electrode forming mask is a substrate holder having no protrusions on its surface. The film forming apparatus according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9016996A JPH09256156A (en) | 1996-03-18 | 1996-03-18 | Film forming device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9016996A JPH09256156A (en) | 1996-03-18 | 1996-03-18 | Film forming device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09256156A true JPH09256156A (en) | 1997-09-30 |
Family
ID=13990995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9016996A Pending JPH09256156A (en) | 1996-03-18 | 1996-03-18 | Film forming device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09256156A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7309269B2 (en) | 2002-04-15 | 2007-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
| US7517551B2 (en) | 2000-05-12 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light-emitting device |
| US9551063B2 (en) | 2002-02-25 | 2017-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system and a fabrication method of a light emitting device |
-
1996
- 1996-03-18 JP JP9016996A patent/JPH09256156A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7517551B2 (en) | 2000-05-12 | 2009-04-14 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing a light-emitting device |
| US9551063B2 (en) | 2002-02-25 | 2017-01-24 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system and a fabrication method of a light emitting device |
| US7309269B2 (en) | 2002-04-15 | 2007-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
| US9209427B2 (en) | 2002-04-15 | 2015-12-08 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
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