JPH09212827A - Magnetoresistive magnetic head - Google Patents

Abstract

(57) [Abstract] [Problem] In a vertical magnetoresistive head,
It is possible to improve the recording density on the recording medium by narrowing the magnetic gap in the vertical magnetoresistive effect magnetic head by compensating for the decrease in the reproduction output by increasing the sensitivity in the magnetic sensitive section. To do. SOLUTION: The lower magnetic body 2 each made of a soft magnetic body
And magnetic sensing part 4 having a magnetoresistive effect between the upper magnetic body 6
Of the spin valve type giant magnetoresistive effect film structure part in which at least a soft magnetic film, a non-magnetic conductive film, a magnetic film, and an antiferromagnetic film are sequentially laminated. With this structure, a sense current is passed through the magnetic sensitive portion 4 in a direction parallel to the signal magnetic field direction from the magnetic recording medium introduced between the lower magnetic body 2 and the upper magnetic body 6.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoresistive effect type magnetic head, and more particularly to a current direction of a sense current for detecting a resistance change to a magnetoresistive effect magnetic sensitive portion thereof and a recording signal magnetic field from a magnetic recording medium. The present invention relates to a so-called vertical type magnetoresistive effect type magnetic head whose directions are selected in parallel.

[0002]

2. Description of the Related Art A so-called vertical type magnetoresistive effect magnetic head in which a direction of a sense current flowing through a magnetoresistive effect sensitive portion and a direction of a recording signal magnetic field from a magnetic recording medium are selected in parallel is shown in FIG. As shown in the schematic cross-sectional view of FIG. 1, on the substrate 1 to be the lower magnetic body, or when the substrate 1 is, for example, a non-magnetic ceramic substrate, this substrate 1
A lower magnetic body 2 such as sendust is formed on top of this, an insulating layer 3 of Al ₂ O ₃ or the like is deposited thereon, and a magnetic sensing portion 4 is formed thereon. Then, on the magnetic sensing part 4,
An upper magnetic body 6 having conductivity is arranged via an insulating layer 5 such as Al ₂ O ₃ and a protective layer 10 is formed thereon. When a recording / reproducing head is formed, a thin film recording head (not shown), for example, is further laminated and formed on the recording / reproducing head.

As shown in FIG. 1, the magnetically sensitive portion 4 is a so-called ABS (air bearing surface) (hereinafter referred to as ABS (air bearing surface) in the surface facing or contacting a magnetic recording medium such as a hard disk (not shown) such as a floating magnetic head. A magnetoresistive effect film, for example, a NiFe alloy film is formed in a strip shape extending backward from the medium facing surface 7). Electrodes 8a and 8b for passing a sense current i to the magnetic sensitive portion 4 are contacted with the front end and the rear end of the magnetic sensitive portion 4, and the sense current i is passed between these electrodes 8a and 8b. The front electrode 8a is electrically connected to the upper magnetic body 6 so that the upper magnetic body 6 has a function as a lead terminal from the electrode 8a.

In this way, the magnetic sensing section 4 is formed in the both magnetic layers 2.
It is sandwiched between and and 6 to be magnetically shielded from the outside, and the front end of the magnetic sensing part 4 is forwarded through a front gap between the magnetic layers 2 and 6 on the medium facing surface 7, that is, a magnetic gap G. From the magnetic gap G, a magnetic field leaking from a magnetic recording medium (not shown) that moves relatively while facing or facing the medium facing surface 7, that is, a signal magnetic field Hs from the recording portion is sensed. It is introduced into the magnetic portion 4. That is, the signal magnetic field is introduced in parallel with the sense current i passing through the magnetic sensing section 4.

In the magnetically sensitive portion 4, the resistance change caused by the signal magnetic field applied thereto is detected as a voltage change by the sense current, whereby the signal magnetic field is detected, that is, the recording on the magnetic recording medium is reproduced. .

In this structure, the distance between the lower and upper magnetic bodies 2 and 6 is selected so that the distance D _G between the portions forming the front magnetic gap _G is narrow, but the front of the magnetic sensing portion 4, that is, the electrode 8a. A sufficiently large distance D _B is selected in the rear portion other than the contacted portion. That is, since the distance D _B is selected sufficiently large in the rear of the magnetic sensing part 4, the risk of short circuit with the magnetic layer 6 can be avoided, and in the front, the front electrode 8a and the magnetic layer 6 are electrically separated from each other. since it is configured as to be connected to the spacing D _G in the magnetic gap G can be sufficiently narrow configured, those that permit the improvement of the recording density in turn the magnetic recording medium, for example, a hard disk.

[0007]

However, when the magnetic gap G is narrowed in this way, the amount of the signal magnetic field introduced into the magnetic sensitive section 4 decreases,
There is a problem that the reproduction output decreases.

Therefore, according to the present invention, in the vertical magnetoresistive effect magnetic head, the decrease in the reproduction output is compensated by the high sensitivity in the magnetic sensing section to obtain the vertical magnetoresistive effect magnetic head. It is possible to improve the recording density on the recording medium by narrowing the magnetic gap in the recording medium.

[0009]

According to the present invention, a magnetic sensitive section having a magnetoresistive effect is arranged between a lower magnetic body and an upper magnetic body, each of which is a soft magnetic body, and the magnetic sensitive section has a lower portion. This is a so-called vertical type magnetoresistive effect magnetic head structure in which a sense current is passed in a direction parallel to a signal magnetic field direction from a magnetic recording medium introduced between a magnetic body and an upper magnetic body. The part has at least a spin valve type giant magnetoresistive film structure part in which a soft magnetic layer, a nonmagnetic conductive layer, a magnetic layer, and an antiferromagnetic layer are sequentially stacked.

Further, in the present invention, a magnetic sensitive portion having a magnetic resistance is disposed between the lower magnetic body and the upper magnetic body, each of which is a soft magnetic body, and the lower magnetic body and the upper magnetic body are disposed in the magnetic sensitive section. A so-called vertical type magnetoresistive effect magnetic head configuration in which a sense current is passed in a direction parallel to a signal magnetic field direction from a magnetic recording medium introduced between the body,
The magnetically sensitive portion is at least a soft magnetic layer, a non-magnetic conductive layer,
It is configured to have a spin valve type giant magnetoresistive effect film structure part in which hard magnetic layers are sequentially stacked.

By the way, the present invention is intended for a so-called vertical type magnetoresistive effect magnetic head in which a sense current is passed in a direction parallel to the signal magnetic field direction, as described above. The expression that the sense current is applied in the direction parallel to the direction indicates that the main direction of the signal magnetic field introduced into the magnetic head and the main direction of the sense current are substantially parallel.

[0012]

Embodiments of the present invention will be described. The magnetic head according to the present invention can be applied to, for example, a vertical head whose schematic sectional view is shown in FIG.

That is, in this example, as shown in the drawing, on the substrate 1 which is the lower magnetic body, or when the substrate 1 is a nonmagnetic nonmagnetic ceramic substrate such as alumina titanium carbide, A lower magnetic substance 2 such as sendust is formed on the substrate 1, and Al ₂ O ₃ is formed on the lower magnetic substance 2.
An insulating layer 3 such as is deposited. Then, a magnetic sensitive portion 4 having a magnetoresistive effect is formed on the insulating layer, and an upper magnetic body 6 having conductivity is formed on the magnetic sensitive portion 4 via an insulating layer 5 of Al ₂ O ₃ or the like. Is placed on top of which a protective layer 1
0 is formed. When a recording / reproducing head is formed, a thin film recording head (not shown), for example, is further laminated and formed on the recording / reproducing head.

The magnetically sensitive portion 4 is formed in a strip shape extending rearward from the medium facing surface 7. Electrodes 8a and 8b for supplying a sense current i to the magnetic sensing portion 4 are contacted with the front end and the rear end of the magnetic sensitive portion 4, and these electrodes 8a and 8b are connected.
In the meantime, the sense current i is passed. And the front electrode 8
The a is electrically connected to the upper magnetic body 6 so that the upper magnetic body 6 has a function as a lead terminal from the electrode 8a.

In this way, the magnetically sensitive portion 4 is formed in the both magnetic layers 2.
It is sandwiched between and and 6 to be magnetically shielded from the outside, and the front end of the magnetic sensing part 4 is forwarded through a front gap between the magnetic layers 2 and 6 on the medium facing surface 7, that is, a magnetic gap G. From the magnetic gap G, a magnetic field leaking from a magnetic recording medium (not shown) that moves relatively while facing or facing the medium facing surface 7, that is, a signal magnetic field Hs from the recording portion is sensed. It is introduced into the magnetic portion 4. That is, the signal magnetic field Hs is introduced in parallel with the sense current i passing through the magnetic sensing section 4.

In the magnetic sensing section 4, the resistance change caused by the signal magnetic field applied thereto is detected as a voltage change by the sense current, so that the signal magnetic field is detected, that is, the recording on the magnetic recording medium is reproduced. .

According to the present invention, in such a vertical type magnetoresistive effect type magnetic head, in particular, the magnetic sensing portion 4 is of a spin valve type giant magnetoresistive effect type structure. That is, as shown in the schematic perspective view of the magnetic sensing section 4 in FIG. 2, a part of an example of which is shown in FIG. 2, a spin valve type giant magnetoresistive film is formed on the lower magnetic body 2 with an insulating layer 3 interposed therebetween. The structure 50 is included. In the example of FIG. 2, a base layer 51, a soft magnetic layer 52, a non-magnetic conductive layer 53, a magnetic layer 54, and an antiferromagnetic layer 55 exchange-coupled with the magnetic layer 54 on the insulating layer 3.
The protective layer 56 and the protective layer 56 are sequentially laminated, for example, by sputtering. The exchange coupling direction between the antiferromagnetic layer 55 and the magnetic layer 54 is selected in the direction parallel to the sense current i and along the signal magnetic field Hs.

The underlayer 51 is made of, for example, a material film of at least any one of Ta, Ti, Hf and the like having a thickness of 5.0 to 10.0 nm.

The soft magnetic layer 52 is made of, for example, NiFe or NiF.
eCo, NiFe-X or the like, and X is Ta, Cu, Nb, Zr, Mo, Rh, H.
Thickness of at least one of f and Cr, 15.0
It is made of a material film of nm or less.

The nonmagnetic conductive layer 53 is made of Cu, CuNi, C.
uAg or the like having a thickness of at least 1.8 to 3.0 n
m of material film.

The magnetic layer 54 is made of NiFe, NiFeCo,
At least one of Co and CoFe has a thickness of 1.0 to
It is made of a material film of 8.0 nm.

The antiferromagnetic layer 55 is made of a high coercive force antiferromagnetic material such as FeMn, NiMn, NiO, NiCoO or CoMn having a film thickness of 5.0 to 80 nm and magnetized in a fixed direction. .

Further, the protective layer can be made of the same material film as the above-mentioned base layer.

The spin-valve giant magnetoresistive effect film structure portion 50 shown in FIG. 2 is the case where the soft magnetic layer 52 is arranged on the substrate 1 side. The soft magnetic layer 51 to the antiferromagnetic layer 55 are laminated. The structure may be vertically inverted from that of FIG. 2, that is, the antiferromagnetic layer 55 may be arranged on the substrate 1 side. In this case, as the antiferromagnetic layer 55, for example, Fe
When an underlayer that induces antiferromagnetic properties such as Mn is required, it is desirable to further dispose, for example, a NiFe or Cu film on the above-mentioned underlayer 51.

The magnetic sensitive section 4 constituted by the spin valve type giant magnetoresistive effect film structure section 50 has a high resistance change with respect to an externally applied magnetic field, that is, a signal magnetic field from the recording medium, that is, a highly sensitive magnetoresistive effect type. Indicates.

The magnetoresistive effect operation of the spin-valve giant magnetoresistive effect film structure portion 50 will be briefly described. As described above, on the magnetic layer 54, there is an anti-strength which is exchange-coupled in parallel with the sense current i. Since the magnetic layer 55 is deposited, the magnetic layer 54 is a so-called pinned layer whose magnetization direction is fixed. The magnetic soft magnetic layer 52 is a so-called free layer which is separated from the magnetic layer 54 by the thin non-magnetic conductive layer 53 and whose magnetization direction is not fixed.

In this state, when an external magnetic field, that is, a signal magnetic field based on recording information from the magnetic recording medium is applied, the free layer, that is, the soft magnetic layer 52 is magnetized by this, and its spin rotates. When the spin direction of the pinned layer, ie, the magnetic layer 54, whose magnetization is fixed, and the spin direction of the free layer, ie, the soft magnetic layer 52, are 180 °, the resistance in the magnetic sensing section 4 becomes maximum. This is because the electrons trying to move between the electrodes 8a and 8b of the magnetic sensing part 4 are scattered at the interface between the nonmagnetic layer and the magnetic layers 52 and 54 having different spin directions. On the contrary, when the spin directions of the magnetic layers 52 and 54 are the same, the electron scattering is small and the resistance thereof is minimum.

As described above, when the spin-valve type giant magnetoresistive film structure is used, the structure is a multilayer film structure, and the structure of the pinned layer whose magnetization is fixed causes a large change in resistance due to an external magnetic field, that is, a highly sensitive magnetic field. The parts can be configured.

In an actual magnetic head, the soft magnetic layer 52 (free layer) can be easily formed by the signal magnetic field from the magnetic recording medium introduced into the magnetic sensitive section 4, that is, the spin valve type giant magnetoresistive effect film structure section 50. ), The easy magnetization axis direction of the soft magnetic layer 52 is set to the width direction of each layer, that is, the direction orthogonal to the sense current direction (signal magnetic field direction).

As described above, in the present invention, since the magnetic sensing section 4 has the spin valve type giant magnetoresistive effect film structure excellent in magnetic sensitivity, the sensitivity of the magnetic sensing section 4 is improved. The reproduction output is compensated in the vertical magnetoresistive effect magnetic head in which the amount of signal magnetic field taken into the magnetically sensitive portion is small.

The spin-valve type giant magnetoresistive effect film structure portion 50 constituting the magnetic sensing portion 4 has the antiferromagnetic layer 56 shown in FIG. 2 as shown in a schematic perspective view of a part of which is shown in FIG. Instead of the configuration of the magnetic layer 55, the predetermined direction, that is, the width direction, that is, the sense current i along the film surface, as described above,
Also, the hard magnetic layer 57 whose magnetization direction is set in a direction substantially orthogonal to the signal magnetic field Hs direction can be arranged.

That is, in this case, for example, the soft magnetic layer 52, the non-magnetic conductive layer 53, the hard magnetic layer 57, and the protective film 56 may be sequentially laminated on the base film 51. In FIG. 3, parts corresponding to those in FIG. 2 are designated by the same reference numerals, and duplicate description will be omitted. In this structure, the base film 51, the soft magnetic layer 52, the nonmagnetic conductive layer 53, and the protective film 56 can be formed of the same material film as described in the structure of FIG.

The hard magnetic film 57 is made of CoPt, C having high coercive force.
It can be made of oPtCr, CoCrTa, or the like.

In this case, the base layer 51 and the protective film 56 can be omitted. Further, in the configuration of FIG. 3, the arrangement of the soft magnetic layer 52 to the hard magnetic film 57 may be vertically inverted in FIG. 3, that is, the hard magnetic film 57 may be on the substrate 1 side.

Also in these configurations, the magnetic sensitive section 4 with high sensitivity can be constructed by the same operating principle as that of the spin valve type giant magnetoresistive film structure section of the configuration of FIG.

As described above, according to the present invention, the magnetic sensitive portion 4 is made to have the spin valve type giant magnetoresistive effect film structure 50 to enhance the sensitivity. The magnetization direction of the soft magnetic film 52 in the non-applied state is a predetermined direction, and in the case of the vertical magnetic head configuration of the present invention, as described above, it is actually the direction of the sense current i, that is, the signal magnetic field. The direction is set to cross the direction of Hs, that is, a direction substantially orthogonal thereto. In this case, since the longitudinal direction of the spin valve type giant magnetoresistive effect film structure portion 50 is the signal magnetic field Hs direction, the soft magnetic film is formed. The direction of magnetization of 52 is the direction of its short side, and its magnetization may become unstable due to shape anisotropy. Therefore, in order to stabilize this magnetization,
As shown in FIGS. 4 and 5, the magnetic sensing section 4 is the above-described spin-valve type giant magnetoresistive film structure section 50 and the magnetization stabilizing means 6 for applying a magnetic field for stabilizing the magnetization of the spin valve type giant magnetoresistive effect film structure section 50.
1 and 1.

As shown in the schematic perspective view of FIG. 4, for example, the magnetization stabilizing means 61 is adjacent to the spin valve type giant magnetoresistive film structure portion 50 along the film surface thereof, and has a sense current i and a signal. It is arranged on both sides or one side along the magnetic field Hs direction. Alternatively, as shown in a similar schematic perspective view in FIG. 5, the spin valve type giant magnetoresistive effect film structure section 50 is provided below the spin valve type giant magnetoresistive effect film structure section 50 and / or the spin valve type giant magnetoresistive effect film structure section 50 is interposed. To place.

The magnetization stabilizing means 61 has a high coercive force,
As indicated by an arrow M in FIGS. 4 and 5, the magnetization is fixed in a direction substantially orthogonal to the direction of the sense current i and the direction of the signal magnetic field Hs given to the above-described spin-valve giant magnetoresistive effect film structure portion 50. It is composed of a hard magnetic film. The coercive force of this hard magnetic film is
A magnetic film having a coercive force high enough not to be disturbed by an external magnetic field, such as BaFeO or C
It can be made of an o-based hard magnetic film such as CoPt or CoCrTa.

Further, in order to stabilize the magnetic characteristics, it is desirable to form a base film of Cr or the like under the hard magnetic film. On the hard magnetic film, at least one of soft magnetic films such as NiFe, NiFeCo, and NiFe-X is used, where X is Ta, Cu, Nb, Zr, or M.
A soft magnetic film made of at least one of o, Rh, Hf, and Cr can be deposited to form a structure in which the magnetic pole generated on the surface of the hard magnetic film is escaped to the side surface.

The magnetic field strength of the magnetization stabilizing means 61 by the hard magnetic film, that is, the magnetic field strength applied to the spin valve type giant magnetoresistive effect film structure portion 50 is selected by multiplying the residual magnetic flux density Br by the thickness δ. , Br · δ can be selected.

Further, the magnetization stabilizing means 61 may be constituted by a laminated structure of a magnetic film on the underlayer film and an antiferromagnetic film exchange-coupled to the magnetic film. The exchange coupling direction in this case is the direction of the sense current i and the signal magnetic field H described above.
The magnetization of the antiferromagnetic film is fixed so as to be substantially orthogonal to the direction of s.

The base film can be made of, for example, Ta, Ti, Hf or the like or an alloy containing an additive element therein.
Further, the magnetic film on this is made of NiFe, NiFeCo, N
iFe-X, where X is T
a, Cu, Nb, Zr, Mo, Rh, Hf, Cr or at least one of them, or 2 such as NiFe / Co
It may be configured by a layer structure or the like. The antiferromagnetic film is FeM
n, NiMn, NiO, NiCoO, CoO, CoMn
And the like.

The magnetization of the hard magnetic film or antiferromagnetic film can be performed by applying a magnetic field in a predetermined direction to form the film, or by applying a magnetic field in a predetermined direction after the film is formed.

By such a magnetization stabilizing means 61, a predetermined magnetic field is applied to the spin valve type giant magnetoresistive effect film structure portion 50, so that the soft magnetic film 52 due to the shape anisotropy or the like is formed. The instability of the magnetization is compensated to stabilize it.

[Embodiment] A vertical type magnetoresistive effect type magnetic head having the configuration of FIG.
The structure has the spin-valve giant magnetoresistive effect film structure portion 50 having the structure shown in (4) and the magnetization stabilizing means 61 shown in FIG. In this case, the film structure of the magnetically sensitive portion 4 has a two-layer magnetic structure of a 3.3 nm-thick NiFe film and a 1.1 nm-thick Co film on a 7.3 nm-thick underlying film made of Ta. The film and the anti-ferromagnetic film made of FeMn having a thickness of 10.0 nm are laminated to constitute the magnetization stabilizing means 61, and the intermediate film or the base film made of Ta having a thickness of 7.3 nm is formed thereon. , NiFe with a thickness of 10.0 nm on top of this
Soft magnetic layer 52 of 2.4 nm, non-magnetic conductive layer 3 of Cu having a thickness of 2.4 nm, magnetic layer 54 of Co having a thickness of 4.4 nm, and antiferromagnetic layer 55 of FeMn having a thickness of 10.0 nm. Then, a spin valve type giant magnetoresistive effect film structure portion 50 in which a protective layer 56 made of Ta having a thickness of 8.8 nm is laminated is configured. In this case, the track width, that is, the width Tw of the magnetic sensitive portion 4 is 5.0 μm, the length L of the magnetic sensitive portion 4 is 8 μm, the distance between the electrodes 8a and 8b, that is, the effective length l of the magnetic sensitive portion is 6 μm, The sense current Is = 6 mA.

In the magnetic head having this structure, the magnetic sensitive portion 4 showed excellent magnetoresistive characteristics without hysteresis and Barkhausen noise. The reproducing characteristic of the magnetic head according to the present invention, that is, the rate of change in resistance with respect to an external magnetic field is shown by the solid curve in FIG. The broken line curve in FIG.
Resistance change to a similar external magnetic field of a conventional vertical type magnetoresistive head in which two NiFe layers each having a thickness of 20 nm, which are not based on the spin-valve giant magnetoresistive film structure, are laminated via a nonmagnetic layer. The measurement results of rate characteristics are shown. The magnetic head having the conventional configuration has a track width Tw.
= 5.0 μm, the length L of the magnetic sensing part 4 was 7.5 μm, the distance between the electrodes, that is, the effective length of the magnetic sensing part 1 = 3.0 μm, and the sense current Is = 6 mA.

As is clear from FIG. 6, the magnetic head according to the present invention can obtain a large resistance change, that is, high sensitivity, with a small magnetic field, and its magnetic sensitivity reaches 2.6 times. It is.

As is clear from the above description, according to the configuration of the present invention, it is possible to compensate for the decrease in sensitivity in the vertical magnetoresistive effect magnetic head, so that the characteristics of the vertical magnetoresistive effect magnetic head, that is, A narrow gap can be achieved, and the recording density can be improved.

[0049]

As described above, according to the structure of the present invention,
In the vertical type magnetoresistive effect magnetic head, the reduction of the reproduction output is compensated by the high sensitivity in the magnetic sensitive section to record the magnetic gap in the vertical type magnetoresistive effect type magnetic head to be narrower. The recording density on the medium can be improved.

[Brief description of drawings]

FIG. 1 is a schematic sectional view of an example of a magnetic head to which the present invention is applied.

FIG. 2 is a schematic perspective view with a partial cross section showing an example of a magnetic sensing part of a magnetic head according to the present invention.

FIG. 3 is a schematic perspective view of an example of a magnetic sensing part of the magnetic head according to the present invention with a partial cross section.

FIG. 4 is a schematic perspective view of an example of a magnetic sensing unit including a magnetization stabilizing unit.

FIG. 5 is a schematic perspective view of an example of a magnetic sensing unit including a magnetization stabilizing unit.

FIG. 6 is a diagram showing magnetoresistive characteristics of a magnetic head according to the present invention and a conventional magnetic head.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Substrate, 2 Lower magnetic body, 4 Magnetic sensitive part, 6 Upper magnetic body, 8a Front electrode, 8b Rear electrode, 50 Spin valve type giant magnetoresistive film structure part, 51 Underlayer, 52
Soft magnetic layer, 53 non-magnetic layer, 54 magnetic layer, 55 antiferromagnetic layer, 56 protective layer, 57 hard magnetic layer, 61 magnetization stabilizing means.

Claims (14)

[Claims] 1. A magnetic sensitive section having a magnetoresistive effect is disposed between a lower magnetic body and an upper magnetic body, each of which is made of a soft magnetic body, and the lower magnetic body and the upper magnetic body are provided in the magnetic sensitive section. A sense current is applied in a direction parallel to the signal magnetic field direction from the magnetic recording medium introduced between the magnetic sensitive medium, and the magnetic sensitive section has at least a soft magnetic layer, a nonmagnetic conductive layer, a magnetic layer, and an antiferromagnetic layer in order. A magnetoresistive effect magnetic head having a laminated spin valve type giant magnetoresistive effect film structure portion. 2. A magnetic sensitive section having a magnetic resistance is disposed between a lower magnetic body and an upper magnetic body, each of which is made of a soft magnetic body, and the magnetic sensitive section is composed of the lower magnetic body and the upper magnetic body. A sense current is passed in a direction parallel to the direction of the signal magnetic field from the magnetic recording medium introduced between them, and the magnetically sensitive portion has at least a soft magnetic layer, a nonmagnetic conductive layer, and a hard magnetic layer which are sequentially laminated. A magnetoresistive effect magnetic head comprising a valve type giant magnetoresistive effect film structure. 3. The soft magnetic layer is made of NiFe, NiFeC.
o, at least one of NiFe-X, X
Is Ta, Cu, Nb, Zr, Mo, Rh, Hf, Cr
2. The magnetoresistive effect magnetic head according to claim 1, wherein the magnetoresistive effect magnetic head comprises at least one of: 4. The soft magnetic layer is made of NiFe, NiFeC.
o, at least one of NiFe-X, X
Is Ta, Cu, Nb, Zr, Mo, Rh, Hf, Cr
The magnetoresistive effect magnetic head according to claim 2, wherein the magnetoresistive effect magnetic head comprises at least one of: 5. The nonmagnetic conductive layer comprises Cu, CuNi,
The magnetoresistive effect magnetic head according to claim 1, wherein the magnetoresistive effect magnetic head is made of at least one of CuAg. 6. The nonmagnetic conductive layer comprises Cu, CuNi,
The magnetoresistive effect magnetic head according to claim 2, wherein the magnetoresistive effect magnetic head is made of at least one of CuAg. 7. The magnetic layer comprises NiFe, NiFeC
The magnetoresistive effect magnetic head according to claim 1, wherein the magnetoresistive effect magnetic head is made of at least one of o, Co, and CoFe. 8. The antiferromagnetic layer is FeMn, NiM
The magnetoresistive head according to claim 1, wherein the magnetoresistive head is made of at least one of n, NiO, NiCoO, CoO, and CoMn. 9. The hard magnetic layer comprises CoPt, CoPtC
3. The magnetoresistive head according to claim 2, wherein the magnetoresistive head is made of at least one of r and CoCrTa. 10. The magnetically sensitive portion includes the spin-valve giant magnetoresistive effect film structure portion and a magnetization stabilizing means for applying a fixed magnetic field to the spin-valve giant magnetoresistive effect film structure portion. The magnetoresistive effect magnetic head according to claim 1, wherein: 11. The magnetically sensitive portion comprises the spin-valve giant magnetoresistive effect film structure portion, and a magnetization stabilizing means for applying a fixed magnetic field to the spin-valve giant magnetoresistive effect film structure portion. The magnetoresistive effect magnetic head according to claim 2, wherein 12. The magnetoresistive head according to claim 10, wherein the magnetization stabilizing means is composed of a hard magnetic layer whose magnetization is fixed. 13. The magnetoresistive effect magnetic head according to claim 11, wherein the magnetization stabilizing means comprises a hard magnetic layer having a fixed magnetization. 14. The magnetoresistive effect type magnetic head according to claim 10, wherein the magnetization stabilizing means comprises an antiferromagnetic layer whose magnetization is fixed.