JPH09210822A - Manufacture of semiconductor pressure sensor - Google Patents
Manufacture of semiconductor pressure sensorInfo
- Publication number
- JPH09210822A JPH09210822A JP1562096A JP1562096A JPH09210822A JP H09210822 A JPH09210822 A JP H09210822A JP 1562096 A JP1562096 A JP 1562096A JP 1562096 A JP1562096 A JP 1562096A JP H09210822 A JPH09210822 A JP H09210822A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor substrate
- diaphragm
- surface side
- pressure sensor
- oxide film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 61
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 16
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 24
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体圧力センサ
の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a semiconductor pressure sensor.
【０００２】[0002]
【従来の技術】半導体マイクロ加工センサとは、シリコ
ンの異方性エッチングまたは薄膜形成技術等を利用して
加工された微小センサのことで、圧力センサまたは加速
度センサ等があり、これらのセンサはピエゾ効果を利用
したものである。2. Description of the Related Art A semiconductor microfabricated sensor is a minute sensor processed by utilizing anisotropic etching of silicon or thin film forming technology. There are pressure sensors, acceleration sensors, etc., and these sensors are piezoelectric sensors. It uses the effect.
【０００３】図２の断面図及び図３の平面図に基づいて
従来の半導体圧力センサの一例について説明する。図
で、１はシリコンからなる半導体基板、１ａは半導体基
板１に形成された所定厚みのダイヤフラム、２は半導体
基板１の表面側のダイヤフラム１ａ上に形成されたピエ
ゾ抵抗、３は半導体基板１の表面及び裏面上に形成され
たフィールド酸化膜、４はフィールド酸化膜３上に形成
されたシリコン窒化膜、５はピエゾ抵抗２に接続された
電極配線である。図２に示す半導体圧力セり半導体基板
１自体を局所的に薄くする方法によって形成されてい
る。また、図３の平面図に示すように、図に示す半導体
圧力センサでは、４つのピエゾ抵抗２がホイートストン
ブリッジのＲ１〜Ｒ４を構成するように接続されてい
る。An example of a conventional semiconductor pressure sensor will be described with reference to the sectional view of FIG. 2 and the plan view of FIG. In the figure, 1 is a semiconductor substrate made of silicon, 1 a is a diaphragm having a predetermined thickness formed on the semiconductor substrate 1, 2 is a piezoresistor formed on the diaphragm 1 a on the front surface side of the semiconductor substrate 1, and 3 is a semiconductor substrate 1. Field oxide films 4 formed on the front surface and the back surface are silicon nitride films formed on the field oxide film 3, and 5 are electrode wirings connected to the piezoresistor 2. The semiconductor pressure cell shown in FIG. 2 is formed by a method of locally thinning the semiconductor substrate 1 itself. Further, as shown in the plan view of FIG. 3, in the semiconductor pressure sensor shown in the drawing, four piezoresistors 2 are connected so as to form R1 to R4 of the Wheatstone bridge.
【０００４】半導体マイクロ加工センサの特徴として
は、（１）シリコンを用いるため、従来のブルドン管式
等に比べて小型で高感度である、（２）再現性が良く信
頼性も高い等が上げられる。半導体マイクロ加工センサ
の動作原理は、ダイヤフラム１ａが圧力を受けて撓む
と、ゲージ抵抗であるピエゾ抵抗２にダイヤフラム１ａ
のたわみ量に応じた応力が発生し、この応力に応じてピ
エゾ抵抗２の抵抗率が変化するので、それを電気的信号
の変動として検知するというものである。従って、半導
体圧力センサの基本的な評価項目として、常温常圧で計
測するピエゾ抵抗２の抵抗値以外に、高温または低温環
境下で評価するオフセット電圧温度特性、または、圧力
を印加した状態で計測する出力電圧・非直線性・圧力ヒ
ステリシス、及び、温度と圧力の、両者のストレス下で
の出力電圧温度特性・感度温度特性等がある。これらの
中で、圧力を印加して計測する項目は実際の圧力を印加
した状態の操作を確認する意味で重要な評価項目であ
る。The characteristics of the semiconductor micro-fabricated sensor are (1) smaller size and higher sensitivity than conventional Bourdon tube type because silicon is used, and (2) high reproducibility and high reliability. To be The principle of operation of the semiconductor microfabricated sensor is that when the diaphragm 1a bends under pressure, the diaphragm 1a is added to the piezoresistor 2 which is a gauge resistance.
A stress is generated in accordance with the amount of flexure of the piezoresistor, and the resistivity of the piezoresistor 2 changes in accordance with this stress. Therefore, as a basic evaluation item of the semiconductor pressure sensor, in addition to the resistance value of the piezoresistor 2 measured at normal temperature and normal pressure, the offset voltage temperature characteristic evaluated under high temperature or low temperature environment, or the measurement with the pressure applied Output voltage / non-linearity / pressure hysteresis, and output voltage temperature characteristics / sensitivity temperature characteristics under both stress of temperature and pressure. Among these, the item to measure by applying pressure is an important evaluation item in the sense of confirming the operation in the state where the actual pressure is applied.
【０００５】次に、図４に基づいて図２及び図３に示し
た半導体圧力センサの製造方法の一例について説明す
る。まず、（ａ）に示すように、半導体基板１を熱酸化
することで半導体基板１の表面及び裏面上にフィールド
酸化膜３を形成する。次に、（ｂ）に示すように、ピエ
ゾ抵抗形成箇所に開口を形成し、不純物のイオン注入工
程、熱拡散工程を経て、ピエゾ抵抗２を形成した後、半
導体基板１の両面にシリコン窒化膜４をＣＶＤ（Chemic
al Vapor Deposition ）により堆積させる。そして、
（ｃ）に示すように、半導体基板１の裏面側で、ダイヤ
フラム形成箇所の、フィールド酸化膜３及びシリコン窒
化膜４を除去して、水酸化カリウムを主成分とするエッ
チング液による異方性エッチングを実施し、所定厚さの
ダイヤフラム１ａを形成する。最後に、ピエゾ抵抗２に
接続される電極配線５をスパッタリング工程、エッチン
グ工程等により形成し、図２に示す半導体圧力センサを
完成させる。Next, an example of a method of manufacturing the semiconductor pressure sensor shown in FIGS. 2 and 3 will be described with reference to FIG. First, as shown in (a), the semiconductor substrate 1 is thermally oxidized to form the field oxide film 3 on the front and back surfaces of the semiconductor substrate 1. Next, as shown in (b), an opening is formed at a piezoresistive formation location, an ion implantation process of impurities and a thermal diffusion process are performed to form a piezoresistive film 2, and then a silicon nitride film is formed on both surfaces of the semiconductor substrate 1. 4 (Chemic
Al Vapor Deposition). And
As shown in (c), on the back surface side of the semiconductor substrate 1, the field oxide film 3 and the silicon nitride film 4 at the diaphragm formation portion are removed, and anisotropic etching is performed using an etching solution containing potassium hydroxide as a main component. Then, the diaphragm 1a having a predetermined thickness is formed. Finally, the electrode wiring 5 connected to the piezoresistor 2 is formed by a sputtering process, an etching process, etc., and the semiconductor pressure sensor shown in FIG. 2 is completed.
【０００６】[0006]
【発明が解決しようとする課題】以上に説明したような
製造工程で製造された半導体圧力センサに表面側から圧
力を印加し動作させたときダイヤフラム１ａが撓み、ダ
イヤフラム１ａの裏面側に引っ張り応力が働き、ダイヤ
フラム１ａの表面側に圧縮応力が働く。ダイヤフラム１
ａのエッジ部分（ダイヤフラム１ａの裏面側の周縁部、
図２のＡ部）の、表面側位置及び裏面側位置、及び、ダ
イヤフラム１ａの中央部分の、表面側位置及び裏面側位
置における応力を図５に示す。図５は、ダイヤフラム１
ａの厚みを約25μm 、印加圧力を1.0kgf/cm2とした場合
の応力をシミュレーションで求めたものである。図５よ
り明らかなように、半導体基板１の裏面側のエッジ部分
（ダイヤフラム１ａの裏面側の周縁部、図２のＡ部）に
最大の応力がかかっており、その部分での機械的な疲労
による寿命が問題となる。When the semiconductor pressure sensor manufactured by the manufacturing process as described above is operated by applying pressure from the front surface side, the diaphragm 1a bends and tensile stress is applied to the back surface side of the diaphragm 1a. A compressive stress acts on the surface side of the diaphragm 1a. Diaphragm 1
edge portion of a (peripheral portion on the back surface side of the diaphragm 1a,
FIG. 5 shows stresses at the front surface side position and the rear surface side position of (A portion in FIG. 2) and the front surface side position and the rear surface side position of the central portion of the diaphragm 1a. FIG. 5 shows the diaphragm 1.
The stress is obtained by simulation when the thickness of a is about 25 μm and the applied pressure is 1.0 kgf / cm 2 . As is clear from FIG. 5, the maximum stress is applied to the edge portion on the back surface side of the semiconductor substrate 1 (the peripheral edge portion on the back surface side of the diaphragm 1a, portion A in FIG. 2), and mechanical fatigue at that portion is exerted. Life is a problem.
【０００７】本発明は、上記問題点に鑑みなされたもの
で、その目的とするところは、機械的疲労耐性に優れ、
信頼性の高い半導体圧力センサの製造方法を提供するこ
とにある。The present invention has been made in view of the above problems, and an object thereof is to have excellent mechanical fatigue resistance,
An object of the present invention is to provide a highly reliable method for manufacturing a semiconductor pressure sensor.
【０００８】[0008]
【課題を解決するための手段】上記目的を達成するた
め、本発明の半導体圧力センサの製造方法は、シリコン
からなる半導体基板の表面側に、酸化工程及び不純物拡
散工程等によりピエゾ抵抗を形成し、前記半導体基板の
裏面側から異方性エッチング等により前記半導体基板を
エッチングして所定厚さのダイヤフラムを形成し、熱酸
化により前記半導体基板の裏面側の、前記ダイヤフラム
を形成した箇所に酸化膜を形成した後、その酸化膜をエ
ッチング等により除去することを特徴とするものであ
る。In order to achieve the above object, a method of manufacturing a semiconductor pressure sensor according to the present invention comprises forming a piezoresistor on a surface side of a semiconductor substrate made of silicon by an oxidation process and an impurity diffusion process. , The semiconductor substrate is etched from the back surface side of the semiconductor substrate by anisotropic etching or the like to form a diaphragm having a predetermined thickness, and an oxide film is formed on the back surface side of the semiconductor substrate by thermal oxidation at the location where the diaphragm is formed. Is formed, the oxide film is removed by etching or the like.
【０００９】本発明の圧力センサの製造方法は、従来技
術と同様に半導体基板の表面側にピエゾ抵抗の不純物拡
散層・電極配線等を形成し、半導体基板の裏面側に異方
性エッチングによりダイヤフラムを形成する。その後
に、熱酸化により半導体基板の裏面側のダイヤフラム形
成箇所に酸化膜を形成し、その酸化膜をエッチング等に
より除去することを特徴とするものである。In the method of manufacturing a pressure sensor of the present invention, as in the prior art, a piezoresistive impurity diffusion layer, electrode wiring, etc. are formed on the front surface side of a semiconductor substrate, and the diaphragm is anisotropically etched on the back surface side of the semiconductor substrate. To form. After that, an oxide film is formed on the rear surface side of the semiconductor substrate on the diaphragm formation portion by thermal oxidation, and the oxide film is removed by etching or the like.
【００１０】本発明によれば、ダイヤフラム形成後に半
導体基板の裏面側のダイヤフラム形成箇所を酸化して酸
化膜を形成し、その酸化膜をエッチング等により除去す
ることで、半導体基板の裏面側の、ダイヤフラムのエッ
ジ部分の形状を滑らかにすることができる（Ｒ形状を形
成することができる）。なぜなら、シリコンへ酸素分子
は等方的に熱拡散するため、酸化膜の形状は、ダイヤフ
ラムの形状をそのまま反映するのではなく、屈曲した部
分の形状は、より滑らかな形状となる。従って、その酸
化膜を除去すると、Ｒ形状が付いた、より滑らかな形状
のダイヤフラムのエッジ部分が露出することになる。ダ
イヤフラムのエッジ部分にＲ形状が付き、より滑らかな
形状となることで、ダイヤフラムのエッジ部分の応力集
中を緩和することができる。According to the present invention, after the diaphragm is formed, the diaphragm forming portion on the back surface side of the semiconductor substrate is oxidized to form an oxide film, and the oxide film is removed by etching or the like, thereby removing the oxide film on the back surface side of the semiconductor substrate. The shape of the edge portion of the diaphragm can be made smooth (R shape can be formed). Because oxygen molecules are isotropically thermally diffused into silicon, the shape of the oxide film does not reflect the shape of the diaphragm as it is, but the bent portion has a smoother shape. Therefore, when the oxide film is removed, the edge portion of the diaphragm having the R shape and having a smoother shape is exposed. The R shape is attached to the edge portion of the diaphragm to make it smoother, so that stress concentration at the edge portion of the diaphragm can be relaxed.
【００１１】[0011]
【発明の実施の形態】図１の断面図に基づいて本発明の
半導体圧力センサの製造方法の一実施形態について説明
する。但し、図２に示した半導体圧力センサの構成と同
等構成については同符号を付すこととする。まず、
（ａ）に示すように、シリコンからなる半導体基板１を
熱酸化することで、半導体基板１の表面側及び裏面側に
フィールド酸化膜３を形成する。次に、（ｂ）に示すよ
うに、半導体基板１の表面側に不純物拡散用の窓をフィ
ールド酸化膜３をエッチングすることにより開孔し、不
純物のイオン注入工程・熱拡散工程を経てピエゾ抵抗２
を形成する。続いて、シリコン窒化膜４を半導体基板１
の表面側及び裏面側にＣＶＤにより形成する。そして、
（ｃ）に示すように、半導体基板１の裏面側でダイヤフ
ラム１ａ形成用の窓を開孔し、半導体基板１の裏面側
で、水酸化カリウムを主成分とするエッチング液による
異方性エッチングを実施し、所定厚さのダイヤフラム１
ａを形成する。次に、（ｄ）に示すように、熱酸化によ
り半導体基板１の裏面側の、ダイヤフラム１ａの形成箇
所に酸化膜６を形成する。この熱酸化工程は、例えば、
酸素雰囲気中、約1000℃〜1100℃で行い、膜厚は約5000
±2000Åとするのが適当である。さらに、（ｅ）に示す
ように、この酸化膜６をフッ酸水溶液またはバッファー
ドフッ酸溶液（HF+NH4F ）などによりエッチングし除去
すると、ダイヤフラム１ａのエッジ部分にＲ形状が付
き、滑らかな形状となる。最後に、（ｆ）に示すよう
に、ピエゾ抵抗２に接続される電極配線５をスパッタリ
ングにより形成すれば半導体圧力センサが完成する。BEST MODE FOR CARRYING OUT THE INVENTION An embodiment of a method for manufacturing a semiconductor pressure sensor of the present invention will be described based on the sectional view of FIG. However, the same components as those of the semiconductor pressure sensor shown in FIG. 2 are designated by the same reference numerals. First,
As shown in (a), the semiconductor substrate 1 made of silicon is thermally oxidized to form the field oxide film 3 on the front surface side and the back surface side of the semiconductor substrate 1. Next, as shown in (b), a window for impurity diffusion is opened on the surface side of the semiconductor substrate 1 by etching the field oxide film 3, and a piezoresistive process is performed through an impurity ion implantation process and a thermal diffusion process. Two
To form Then, the silicon nitride film 4 is applied to the semiconductor substrate 1.
Are formed on the front surface side and the back surface side by CVD. And
As shown in (c), a window for forming the diaphragm 1a is opened on the back surface side of the semiconductor substrate 1, and anisotropic etching is performed on the back surface side of the semiconductor substrate 1 using an etching solution containing potassium hydroxide as a main component. Implemented and diaphragm 1 of specified thickness
a is formed. Next, as shown in (d), an oxide film 6 is formed on the rear surface side of the semiconductor substrate 1 at the location where the diaphragm 1a is formed by thermal oxidation. This thermal oxidation step, for example,
Performed in an oxygen atmosphere at approximately 1000 ° C to 1100 ° C, with a film thickness of approximately 5000
A value of ± 2000Å is appropriate. Further, as shown in (e), when the oxide film 6 is removed by etching with a hydrofluoric acid aqueous solution or a buffered hydrofluoric acid solution (HF + NH 4 F), an R shape is attached to the edge portion of the diaphragm 1a, resulting in a smooth surface. It becomes a shape. Finally, as shown in (f), a semiconductor pressure sensor is completed by forming the electrode wiring 5 connected to the piezoresistor 2 by sputtering.
【００１２】[0012]
【発明の効果】以上に述べたように、本発明の半導体圧
力センサの製造方法によれば、ダイヤフラムのエッジ部
分の形状を従来に比べ滑らかな形状とすることができる
ので、最も大きな応力がかかるその部分の、応力の集中
を緩和することができる。従って、半導体圧力センサの
機械的疲労に対する耐性を向上させることができ、容易
に信頼性の高い半導体圧力センサを得ることが可能とな
る。As described above, according to the method for manufacturing a semiconductor pressure sensor of the present invention, the edge portion of the diaphragm can be made smoother than before, so that the greatest stress is applied. The concentration of stress at that portion can be relieved. Therefore, the resistance of the semiconductor pressure sensor to mechanical fatigue can be improved, and a highly reliable semiconductor pressure sensor can be easily obtained.
【図１】本発明の半導体圧力センサの製造方法の一実施
形態を示す断面図である。FIG. 1 is a cross-sectional view showing one embodiment of a method for manufacturing a semiconductor pressure sensor of the present invention.
【図２】従来の半導体圧力センサの構造の一例を示す断
面図である。FIG. 2 is a sectional view showing an example of a structure of a conventional semiconductor pressure sensor.
【図３】半導体圧力センサの平面構造の一例を示す平面
図である。FIG. 3 is a plan view showing an example of a planar structure of a semiconductor pressure sensor.
【図４】従来の半導体圧力センサの製造方法の一例を示
す断面図である。FIG. 4 is a sectional view showing an example of a conventional method for manufacturing a semiconductor pressure sensor.
【図５】従来の半導体圧力センサの応力を示す表であ
る。FIG. 5 is a table showing stress of a conventional semiconductor pressure sensor.
１ 半導体基板 １ａ ダイヤフラム ２ ピエゾ抵抗 ６ 酸化膜 1 semiconductor substrate 1a diaphragm 2 piezoresistor 6 oxide film
Claims (1)
に、酸化工程及び不純物拡散工程等によりピエゾ抵抗を
形成し、前記半導体基板の裏面側から異方性エッチング
等により前記半導体基板をエッチングして所定厚さのダ
イヤフラムを形成し、熱酸化により前記半導体基板の裏
面側の、前記ダイヤフラムを形成した箇所に酸化膜を形
成した後、その酸化膜をエッチング等により除去するこ
とを特徴とする半導体圧力センサの製造方法。1. A piezoresistor is formed on a front surface side of a semiconductor substrate made of silicon by an oxidation step, an impurity diffusion step, etc., and the semiconductor substrate is etched from a back surface side of the semiconductor substrate by anisotropic etching or the like so as to be predetermined. A semiconductor pressure sensor characterized in that a diaphragm having a thickness is formed, an oxide film is formed on the rear surface side of the semiconductor substrate by thermal oxidation at a portion where the diaphragm is formed, and then the oxide film is removed by etching or the like. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1562096A JPH09210822A (en) | 1996-01-31 | 1996-01-31 | Manufacture of semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1562096A JPH09210822A (en) | 1996-01-31 | 1996-01-31 | Manufacture of semiconductor pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09210822A true JPH09210822A (en) | 1997-08-15 |
Family
ID=11893761
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1562096A Pending JPH09210822A (en) | 1996-01-31 | 1996-01-31 | Manufacture of semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09210822A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495389B2 (en) | 2000-09-05 | 2002-12-17 | Denso Corporation | Method for manufacturing semiconductor pressure sensor having reference pressure chamber |
-
1996
- 1996-01-31 JP JP1562096A patent/JPH09210822A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6495389B2 (en) | 2000-09-05 | 2002-12-17 | Denso Corporation | Method for manufacturing semiconductor pressure sensor having reference pressure chamber |
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