JPH09139564A - Thick film wiring and method of forming the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to form a desired electrode pattern in a short process and to prevent the reduction in the specific resistance of an electrode material from being generated by a method wherein pattern-shaped plated layers consisting of the electrode material are made to bond on a glass substrate via a glass paste. SOLUTION: A patterned insulating layer 2 running counter to an electrode to be formed is first formed on a plate material 1 having a conductivity to manufacture a substrate 3 for transfer use. After that, plated layers 4 consisting of an electrode material are respectively formed on wiring pattern parts 1a other than the layer 2, while a bonding layer 6 containing an adhesive glass frit is formed on the whole surface of a glass substrate 5 to be made the layers 4 transfer. Then, after the substrate 3 is pressure bonded on the substrate 5, the layers 4 are peeled from the substrate 3 and the layers 4 are transferred on the substrate 5 along with the layer 6. Subsequently, the substrate 5 is fired to make the layers 4 adhere closely to the substrate 5 and the pattern-shaped plated layers 4 consisting of the electrode material are bonded on the substrate 5 via a glass paste 7.

Description

Detailed Description of the Invention

[0001]

The present invention relates to a printed wiring board,
The present invention relates to a thick film wiring in a plasma display panel substrate or the like and a method for forming the same.

[0002]

Usually, in the thick film wiring as described above, a thin film is formed by applying an electrode paste on the entire surface of a substrate on which it is to be formed and baking it, and the thin film is formed by a photolithography method. It is formed by patterning by (resist film formation, exposure, development, etching, resist peeling). However, this method has a drawback in that the patterning process by the photolithography method takes a long time, resulting in a long process. In addition, since the paste material contains glass frit in addition to the metal powder and the ratio of the metal powder serving as the electrode per unit volume is low, it is difficult to obtain a material having a low specific resistance as the electrode.

The present invention has been made in view of the above problems, and an object of the present invention is to form a desired electrode pattern in a short process and to prevent a decrease in the specific resistance of the electrode material. A thick film wiring and a method for forming the same are provided.

[0004]

In order to achieve the above object, the thick film wiring of the present invention is characterized in that a patterned plating layer made of an electrode material is adhered onto a glass substrate via a glass paste. It is what

The thick film wiring having the above structure can be formed by a method including at least the following steps. (1) A step of forming a transfer substrate by forming an insulating layer having a pattern opposite to that of an electrode to be formed on a conductive plate material. (2) A step of forming a plating layer by plating an electrode material on the insulating layer non-formation portion of the transfer substrate. (3) A step of forming a glass frit-containing adhesive layer on the entire surface or a part of the glass substrate to be transferred. (4) The transfer substrate and the glass substrate are pressure-bonded to each other,
A step of separating the transfer substrate and the glass substrate and transferring the plating layer together with the adhesive layer onto the glass substrate. (5) A step of firing the glass substrate to melt the glass frit in the adhesive layer, and fusing the plating layer to the glass substrate.

The thick film wiring having the above structure can be formed by a method including at least the following steps. (1) A step of forming a transfer substrate by forming an insulating layer having a pattern opposite to that of an electrode to be formed on a conductive plate material. (2) A step of forming a plating layer by plating an electrode material on the insulating layer non-formation portion of the transfer substrate. (3) A step of forming a glass frit-containing adhesive layer on the entire surface or a part of the transfer substrate. (4) The transfer substrate and the glass substrate are pressure-bonded to each other,
A step of separating the transfer substrate and the glass substrate and transferring the plating layer together with the adhesive layer onto the glass substrate. (5) A step of firing the glass substrate to melt the glass frit in the adhesive layer, and fusing the plating layer to the glass substrate.

[0007]

BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of the thick film wiring according to the present invention will be described below by describing the forming procedure thereof with reference to the drawings.

First, as shown in FIG. 1A, an insulating layer 2 having a pattern opposite to that of an electrode to be formed is formed on a plate material 1 having conductivity to prepare a transfer substrate 3.

As the plate material 1 of the transfer substrate 3, a glass plate having a conductive layer on its surface, SUS, Invar 36 (F
e: Ni = 64: 36), Invar 42 (Fe: Ni =
58:42), Kovar (Fe: Ni: Co = 54: 2)
9:17), materials such as Ti are preferable. Further, it is preferable that the surface roughness (Rmax) is polished to 1000 Å or less. Examples of this polishing method include a lapping polishing method and an electric field composite polishing method.

The insulating layer 2 exposes the wiring pattern portion 1a of the plate material 1 by applying a photoresist on the plate material 1, exposing the photoresist layer through a predetermined mask, and exposing the photoresist layer closely. It is formed by Alternatively, it can be obtained by forming an insulating film on the plate material 1 and patterning the insulating film by a photolithography method. As the insulating film, a SiNx film or a SiOx film formed by a CVD method, a SiNx film formed by a reactive deposition film, an S
An iOx film or a shot glass film, a coating glass, a coating film of a ceramic precursor polymer, a curable resin or the like (baking if necessary) and the like are used. Examples of ceramic precursor polymers include silazane polymers and silanol compounds. After forming the insulating film as described above on the plate material, specifically, after performing the steps of forming a resist film, exposing through a mask, and developing, a step of etching the insulating film by dry etching is taken. . Note that dry etching can be performed with a high aspect ratio by performing reactive ion etching. After that, the resist is peeled off to complete the transfer substrate 3 on which the insulating layer 2 having a pattern opposite to the electrodes to be formed on the plate material 1 is formed as shown in FIG.

As another method for producing the transfer substrate, a portion of the plate material where the insulating layer is to be formed may be previously etched to form a recess, and the insulating layer may be formed in the recess. In this case, a photoresist layer is patterned on the plate material, the surface of the plate material corresponding to the pattern openings is etched to form recesses, and then an insulating layer is formed on the entire surface, and then the photoresist layer and the photoresist layer are formed thereon. It is simpler to adopt the method of peeling the insulating layer (lift-off method).

After the transfer substrate 3 is manufactured, an electrode material is plated on the wiring pattern portion 1a other than the insulating layer 2 on the transfer substrate 3 to form a plated layer 4, as shown in FIG. 1 (b). . As the electrode material, Ag, Cu, N
A metal material such as i is used. On the other hand, as shown in FIG. 1C, a glass frit-containing adhesive layer 6 having adhesiveness or adhesiveness is formed on the entire surface of the glass substrate 5 to which the plating layer 4 is transferred.
To form As the adhesive layer 6, a material used as a binder for a normal metal paste is used. Specifically, a low melting point glass frit (PbO) containing PbO as a main component is used.
O, Al ₂ O ₃ , B ₂ O ₃ , SiO ₂ etc.), binder resin (eg ethyl cellulose, nitrocellulose,
(Alkaline resin, etc.) and, if necessary, a solvent and additives are added. The adhesive layer 6 may be formed only on the plating layer 4 portion, or the plating layer 4 of the transfer substrate 3 may be formed.
It may be formed on the entire surface or a part thereof including the above. If it is formed only on the plating layer 4 portion, it only serves as an adhesive layer, but if it is formed on the entire surface as shown in the figure, it serves as a base layer at the time of transfer. The effect of preventing the diffusion of

The surface of the insulating layer 2 having a pattern contradictory to the electrodes to be formed on the transfer substrate 3 for the purpose of improving the releasability in the process of separating the transfer substrate 3 from the glass substrate 5, that is, in the transfer process. It is preferable to provide a releasable resin layer. This releasable resin layer can be formed of a silicone resin, a polyimide resin, a Teflon resin, or the like, and particularly when considering the releasability of the adhesive,
Silicone resins are preferably used. The silicone resin may be a thermosetting silicone resin, an ultraviolet curable silicone resin, or an electron beam curable silicone resin. The thickness of such a peelable resin layer is 0.00
It is preferably about 5 to 1 μm. The thickness of the peelable resin layer is 0.
If the thickness is less than 005 μm, it is difficult to form a thinner layer and the protection of the entire surface of the insulating layer becomes insufficient. Further, if the thickness of the peelable resin layer exceeds 1 μm, the electrodeposited substance may not be formed in the recess or the shape of the recess may change, which is not preferable. Examples of the method of forming the releasable resin layer include a method of coating by a pouring method and then curing, spin coating, roll coating and the like.

Then, as shown in FIG. 1D, the transfer substrate 3 is pressure-bonded onto the glass substrate 5 so that the adhesive layer 6 contacts the glass substrate 5. This pressure bonding may be performed by any method such as roller pressure bonding, plate pressure bonding, and vacuum pressure bonding. Further, when the adhesive layer 6 has a binder resin that exhibits tackiness or adhesiveness by heating, thermocompression bonding can be performed. Thereafter, as shown in FIG. 1E, the transfer substrate 3 is peeled off, and the plating layer 4 is transferred together with the adhesive layer 6 on the glass substrate 5. Then, the peeled transfer substrate 3 is reused.

Then, the glass substrate 5 is fired to bring the plated layer 4 into close contact with the glass substrate. That is, when the glass frit-containing adhesive layer 6 is fired, the solvent or binder resin as a binder component is incinerated and disappears, the remaining glass frit component is melted, and the plating layer 4 and the glass substrate 5 can be bonded. As a result, as shown in FIG. 1F, a thick film wiring in which the patterned plating layer 4 made of the electrode material is bonded onto the glass substrate 5 via the glass paste 7 is formed.

[0016]

As described above, according to the present invention,
A patterned plating layer made of an electrode material is formed on a transfer substrate by a plating method, the plating layer is transferred to a glass substrate by a glass frit-containing adhesive layer, and then baked to melt the glass frit in the adhesive layer. Since the thick film wiring is formed by adhering the plating layer to the glass substrate, the patterning process by the photolithography method is not required unlike the thick film wiring using the conventional electrode paste, so the process can be shortened. be able to. In addition, since the glass frit does not exist in the electrode as in the case of using the electrode paste, the specific resistance of the electrode material does not decrease.

[Brief description of the drawings]

FIG. 1 is a process chart showing a procedure for forming a thick film wiring.

[Explanation of symbols]

 1 plate material 2 insulating layer 3 transfer substrate 4 plating layer 5 glass substrate 6 glass frit-containing adhesive layer 7 glass paste

Claims (3)

[Claims] 1. A thick film wiring, wherein a patterned plating layer made of an electrode material is bonded onto a glass substrate via a glass paste. 2. A thick film wiring forming method comprising at least the following steps. (1) A step of forming a transfer substrate by forming an insulating layer having a pattern opposite to that of an electrode to be formed on a conductive plate material. (2) A step of forming a plating layer by plating an electrode material on the insulating layer non-formation portion of the transfer substrate. (3) A step of forming a glass frit-containing adhesive layer on the entire surface or a part of the glass substrate to be transferred. (4) The transfer substrate and the glass substrate are pressure-bonded to each other,
A step of separating the transfer substrate and the glass substrate and transferring the plating layer together with the adhesive layer onto the glass substrate. (5) A step of firing the glass substrate to melt the glass frit in the adhesive layer, and fusing the plating layer to the glass substrate. 3. A thick film wiring forming method comprising at least the following steps. (1) A step of forming a transfer substrate by forming an insulating layer having a pattern opposite to that of an electrode to be formed on a conductive plate material. (2) A step of forming a plating layer by plating an electrode material on the insulating layer non-formation portion of the transfer substrate. (3) A step of forming a glass frit-containing adhesive layer on the entire surface or a part of the transfer substrate. (4) The transfer substrate and the glass substrate are pressure-bonded to each other,
A step of separating the transfer substrate and the glass substrate and transferring the plating layer together with the adhesive layer onto the glass substrate. (5) A step of firing the glass substrate to melt the glass frit in the adhesive layer, and fusing the plating layer to the glass substrate.