JPH087365A - Magneto-optical recording medium - Google Patents
Magneto-optical recording mediumInfo
- Publication number
- JPH087365A JPH087365A JP14160294A JP14160294A JPH087365A JP H087365 A JPH087365 A JP H087365A JP 14160294 A JP14160294 A JP 14160294A JP 14160294 A JP14160294 A JP 14160294A JP H087365 A JPH087365 A JP H087365A
- Authority
- JP
- Japan
- Prior art keywords
- magneto
- layer
- recording
- optical recording
- dielectric layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、光磁気記録媒体に関す
る。さらに、詳しくは生産性に優れ、繰り返し記録性に
優れる光磁気記録媒体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magneto-optical recording medium. More specifically, it relates to a magneto-optical recording medium having excellent productivity and excellent repetitive recording property.
【0002】[0002]
【従来の技術】光記録媒体の中でも書き込み消去のでき
る書き換え可能型として従来知られるものとして相変化
型、フォトクロミック型、光磁気型等がある。これらの
書き換え可能型の中でも、光磁気型は書き込み速度や繰
返し耐性に優れているという特徴を有する。光磁気記録
媒体の記録は、収束させたレ−ザ光を媒体に照射して光
磁気記録膜の温度をキュウ−リ点近傍まで上昇させ磁界
を印加して反転磁区を形成させるものである。2. Description of the Related Art Among optical recording media, phase change type, photochromic type, magneto-optical type, etc. are known as rewritable types capable of writing and erasing. Among these rewritable types, the magneto-optical type has a feature that it is excellent in writing speed and repetition resistance. In recording on a magneto-optical recording medium, converged laser light is irradiated onto the medium to raise the temperature of the magneto-optical recording film to near the Curie point and apply a magnetic field to form an inverted magnetic domain.
【0003】このような光磁気記録媒体は、一般的に次
のような構成が例示される。基板/第1誘電体層(80
〜120nm)/光磁気記録層(20〜30nm)/第
2誘電体層(30〜50nm)/反射膜(40〜60n
m)の膜厚構成である。第1誘電体及び第2誘電体はS
iNやSiC,光磁気記録層はTbFeCo,反射膜は
Alで構成されることが多い。Generally, such a magneto-optical recording medium has the following structure. Substrate / first dielectric layer (80
˜120 nm) / magneto-optical recording layer (20-30 nm) / second dielectric layer (30-50 nm) / reflection film (40-60 n)
m) is the film thickness configuration. The first dielectric and the second dielectric are S
In many cases, iN, SiC, the magneto-optical recording layer is made of TbFeCo, and the reflective film is made of Al.
【0004】このような従来構造の光磁気記録媒体は、
通常、複数のチャンバ−から構成されるインライン型の
スパッタリング装置で第1誘電体から反射膜まで成膜さ
れるが、第1誘電体層が厚いため生産性が低いという問
題がある。The magneto-optical recording medium having such a conventional structure is
Usually, the first dielectric layer to the reflective film are formed by an in-line type sputtering apparatus composed of a plurality of chambers, but there is a problem that productivity is low because the first dielectric layer is thick.
【0005】しかしながら、生産性を向上させようとし
て、第1誘電体層を薄くすると、連続した消去/記録動
作により媒体の溝特性やサ−ボ特性が劣化するという問
題が生ずる。これは、レ−ザ−照射により光磁気記録層
に蓄積された熱が樹脂基板表面に伝達し、数10nmの
溝形状が変化するためだと考えられる。However, when the thickness of the first dielectric layer is reduced in order to improve the productivity, there arises a problem that the groove characteristic and the servo characteristic of the medium are deteriorated by the continuous erasing / recording operation. It is considered that this is because the heat accumulated in the magneto-optical recording layer by the laser irradiation is transferred to the surface of the resin substrate and the groove shape of several tens nm is changed.
【0006】[0006]
【発明が解決しようとする課題】上記のような現状に鑑
み、本発明者らは鋭意検討を重ねた結果、従来の光磁気
記録媒体の構造に比べて特に第1誘電体層が薄い構造の
媒体であっても、繰り返しの消去・再生により媒体の溝
特性やサ−ボ特性の劣化の少ない媒体を見出し、本発明
を完成するに至った。In view of the above situation, the inventors of the present invention have made extensive studies and found that the first dielectric layer has a thinner structure than the conventional magneto-optical recording medium. Even with respect to the medium, a medium having little deterioration in groove characteristics and servo characteristics due to repeated erasure / reproduction was found, and the present invention was completed.
【0007】即ち、本発明は、基板上に少なくとも第1
誘電体層(膜厚:Anm)、希土類金属と遷移金属から
なる光磁気記録層(膜厚:Bnm)、第2誘電体層(膜
厚:Cnm)および反射膜層(膜厚:Dnm)を有する
光磁気記録媒体において、膜厚A〜Dがそれぞれ25n
m≦A≦33nm、13nm≦B≦17nm、20nm
≦C≦35nm、60nm≦D≦100nmであり、第
1誘電体層と第2誘電体層とがケイ素と窒素とから構成
され、さらに反射膜層が1.0〜2.5重量%のクロム
を含むアルミニウムから構成されることを特徴とする光
磁気記録媒体に関する。That is, the present invention provides at least a first substrate on a substrate.
A dielectric layer (film thickness: Anm), a magneto-optical recording layer (film thickness: Bnm) made of a rare earth metal and a transition metal, a second dielectric layer (film thickness: Cnm) and a reflective film layer (film thickness: Dnm). In the magneto-optical recording medium, the film thicknesses A to D are each 25 n
m ≦ A ≦ 33 nm, 13 nm ≦ B ≦ 17 nm, 20 nm
≦ C ≦ 35 nm, 60 nm ≦ D ≦ 100 nm, the first dielectric layer and the second dielectric layer are composed of silicon and nitrogen, and the reflective film layer is 1.0 to 2.5 wt% chromium. And a magneto-optical recording medium characterized by being composed of aluminum containing
【0008】以下、本発明を詳細に説明する。The present invention will be described in detail below.
【0009】本発明に用いる基板としては、ガラス、ポ
リカ−ボネイト樹脂、アクリル樹脂、オレフィン樹脂な
どの透明材料を用いることが可能である。As the substrate used in the present invention, it is possible to use a transparent material such as glass, polycarbonate resin, acrylic resin or olefin resin.
【0010】本発明に用いる第1誘電体層および第2誘
電体層としては、ケイ素と窒素とから構成され、その膜
厚をそれぞれAnmおよびCnmとすると、25nm≦
A≦33nmおよび20nm≦C≦35nmの膜厚を有
するものである。第1誘電体層の膜厚としては、基板側
に熱が伝達するのを実質的に防止し、かつ媒体を薄くす
るという点で25nm≦A≦30nmが好ましい。この
ような誘電体層は、窒素雰囲気下で、ケイ素タ−ゲット
をスパッタリングしたり、窒化ケイ素タ−ゲットをスパ
ッタリングすることにより得ることができる。The first dielectric layer and the second dielectric layer used in the present invention are composed of silicon and nitrogen, and if the film thicknesses are Anm and Cnm, respectively, 25 nm ≦
It has a film thickness of A ≦ 33 nm and 20 nm ≦ C ≦ 35 nm. The thickness of the first dielectric layer is preferably 25 nm ≦ A ≦ 30 nm from the viewpoint of substantially preventing heat transfer to the substrate side and thinning the medium. Such a dielectric layer can be obtained by sputtering a silicon target or a silicon nitride target under a nitrogen atmosphere.
【0011】本発明に用いる光磁気記録層は希土類金属
と遷移金属とからなる。希土類金属としてはTb、D
y、Gdなどを、遷移金属としては、Fe、Co、Ni
などを例示することができ、それぞれの金属の一種以上
を組合わせればよい。具体的には、TbFe,TbC
o,TbFeCo,DyCo,DyFeCo,GdF
e,GdFeCo,TbFeNi,GdTbFeCoな
どを挙げることができる。さらに、光磁気記録層には耐
蝕性などを高めるために、Cr,Ti,Al,Ta,M
o,Bi,Cuなどの金属を一種以上含有してもよい。The magneto-optical recording layer used in the present invention comprises a rare earth metal and a transition metal. Tb and D as rare earth metals
Transition metals such as y and Gd are Fe, Co, and Ni.
Etc. can be illustrated, and one or more kinds of each metal may be combined. Specifically, TbFe, TbC
o, TbFeCo, DyCo, DyFeCo, GdF
e, GdFeCo, TbFeNi, GdTbFeCo, etc. can be mentioned. Furthermore, in order to improve the corrosion resistance of the magneto-optical recording layer, Cr, Ti, Al, Ta, M
One or more metals such as o, Bi and Cu may be contained.
【0012】このような光磁気記録層は、例えば希土類
金属タ−ゲットと遷移金属タ−ゲットとからスパッタリ
ングにより得ることができる。光磁気記録層の膜厚(B
nm)は、13nm≦B≦17nmが好ましい。Such a magneto-optical recording layer can be obtained by sputtering from a rare earth metal target and a transition metal target, for example. Thickness of magneto-optical recording layer (B
nm) is preferably 13 nm ≦ B ≦ 17 nm.
【0013】本発明に用いる反射膜層は、1.0〜2.
5重量%のクロムを含むアルミニウムから構成され、膜
厚Dnmは60nm≦D≦100nmである。反射膜層
の材質と厚さは、第1誘電体層の厚さと関連があり、繰
り返し消去・記録に溝特性やサ−ボ特性の劣化が起こら
ず従来と同等の記録再生特性が得られるように決定され
るものである。繰り返し消去・記録に対する耐性が大き
くなるという点で、80〜100nmが好ましい。反射
膜層の膜厚が60nm未満では、溝特性やサ−ボ特性の
劣化をひきおこす場合があり、一方、膜厚が100nm
をこえると、効果が飽和し、記録パワ−の上昇のみ引き
起こすため光磁気記録媒体の特性としては好ましくない
場合がある。また、クロム含量としては、1.0〜2.
0重量%が好ましく、耐蝕性などを高める目的で、A
g,Ti,Mo、Taなどの金属をを微量含有させても
よい。The reflective film layer used in the present invention has a thickness of 1.0-2.
It is made of aluminum containing 5% by weight of chromium, and the film thickness Dnm is 60 nm ≦ D ≦ 100 nm. The material and the thickness of the reflective film layer are related to the thickness of the first dielectric layer, so that it is possible to obtain the same recording / reproducing characteristics as before without deterioration of groove characteristics and servo characteristics during repeated erasing / recording. Will be decided. The thickness is preferably 80 to 100 nm from the viewpoint that the resistance to repeated erasure / recording increases. When the film thickness of the reflective film layer is less than 60 nm, the groove characteristics and the servo characteristics may be deteriorated, while the film thickness is 100 nm.
If it exceeds, the effect is saturated and only the increase of the recording power is caused, so that it may not be preferable as the characteristic of the magneto-optical recording medium. The chromium content is 1.0 to 2.
0% by weight is preferable, and for the purpose of enhancing corrosion resistance, A
A trace amount of a metal such as g, Ti, Mo or Ta may be contained.
【0014】本発明の光磁気記録媒体には、必要に応じ
て反射膜層の上部に保護コ−ト層や基板の反誘電体層側
にハードコート層を設けてもよく、また、単板のままで
も貼り合せて使用してもよい。In the magneto-optical recording medium of the present invention, a protective coat layer may be provided on the reflective film layer or a hard coat layer may be provided on the anti-dielectric layer side of the substrate, if necessary. You may use it as it is or by pasting it together.
【0015】[0015]
【発明の効果】本発明によれば、第1誘電体を従来構造
に比べて薄くしても、従来構造と同等の光学特性、記録
再生特性を得ることができ、さらに反射膜の膜厚を特定
することにより第1誘電体膜が薄い媒体の欠点である繰
り返し消去・記録による溝特性、サ−ボ特性の劣化を抑
制することが可能である。また、反射膜層が厚くなって
も、反射膜層の成膜速度は誘電体層の成膜速度に比べて
大きいため、生産性の低下は生じない。さらに、反射膜
層を厚くすることによる記録パワ−の上昇は、反射膜の
組成を特定することにより制御が可能であり、また、耐
蝕性に優れる。According to the present invention, even if the first dielectric is thinner than that of the conventional structure, the same optical characteristics and recording / reproducing characteristics as those of the conventional structure can be obtained. By specifying it, it is possible to suppress deterioration of groove characteristics and servo characteristics due to repeated erasure / recording, which is a drawback of a medium having a thin first dielectric film. Further, even if the reflective film layer is thick, the film forming rate of the reflective film layer is higher than the film forming rate of the dielectric layer, and therefore the productivity is not reduced. Further, the increase in recording power due to the thickening of the reflection film layer can be controlled by specifying the composition of the reflection film, and the corrosion resistance is excellent.
【0016】[0016]
実施例1〜12 1.6μmピッチの案内溝をもつ直径86mmのポリカ
−ボネイト基板上にスパッタリング装置で第1誘電体層
SiN,引き続きTbとFeCoタ−ゲットを用いた二
元スパッタリングで光磁気記録層、第2誘電体層Si
N,Al98.5Cr1.5(wt%)の反射膜層を表1に示
す構成で成膜した。光磁気記録層の組成はTbタ−ゲッ
トとFeCoタ−ゲットへの投入電力を調整し、Tb19
(Fe92Co8)81at%とした。Examples 1 to 12 Magneto-optical recording was performed on a polycarbonate substrate having a diameter of 86 mm having a guide groove with a pitch of 1.6 μm by a sputtering device with a first dielectric layer SiN, and then by binary sputtering using Tb and FeCo targets. Layer, second dielectric layer Si
A reflection film layer of N, Al 98.5 Cr 1.5 (wt%) was formed in the configuration shown in Table 1. The composition of the magneto-optical recording layer is Tb data - target and FeCo data - to adjust the power supplied to the target, Tb 19
(Fe 92 Co 8 ) 81 at%.
【0017】これらの試料の記録媒体としての記録再生
特性を検討した。測定装置は波長780nmでNAが
0.53の光磁気ディスク測定装置を用い、測定条件は
測定半径30mm、ディスク回転数1800rpm,記
録再生周波数3.7MHzで記録時の印加磁界を200
Oeとして記録レ−ザ−パワ−を変えてCNRを求め
た。消去は記録に先立ち印加磁界−300Oe,消去光
パワ−9.0mWで行った。The recording / reproducing characteristics of these samples as recording media were examined. The measuring device is a magneto-optical disc measuring device having a wavelength of 780 nm and an NA of 0.53. The measuring conditions are a measurement radius of 30 mm, a disc rotation speed of 1800 rpm, a recording / reproducing frequency of 3.7 MHz, and an applied magnetic field of 200 at the time of recording.
The CNR was obtained by changing the recording laser power as Oe. Erasure was performed with an applied magnetic field of -300 Oe and an erasing light power of 9.0 mW prior to recording.
【0018】また、これらの試料の記録媒体としての繰
り返し消去・記録特性を検討した。測定装置は波長78
0nmでNAが0.53の光磁気ディスク測定装置を用
い、測定条件は測定半径30mm、ディスク回転数18
00rpm,記録再生周波数5.0MHzで、消去パワ
−12mW,記録パワ−12mWで100万回の繰り返
し消去・記録を行った。繰り返し試験を行ったトラック
の溝信号とサ−ボ信号を観察したところ従来構造の媒体
においては試験前に比べ変化は認められなかった。Further, repeated erasure / recording characteristics of these samples as a recording medium were examined. The measuring device has a wavelength of 78
Using a magneto-optical disk measuring device with 0 nm and NA of 0.53, the measurement conditions are as follows: measurement radius 30 mm, disk rotation speed 18
Repeated erasure / recording was performed at 00 rpm, a recording / reproducing frequency of 5.0 MHz, an erasing power of 12 mW, and a recording power of 12 mW. When the groove signal and the servo signal of the track subjected to the repeated test were observed, no change was observed in the medium having the conventional structure as compared with that before the test.
【0019】表1にトラッキングサ−ボの変化量、最適
記録パワ−、最適記録パワ−でのCNRを示す。なお、
トラッキングサ−ボの変化量は、繰り返し試験後のトラ
ッキングエラ−信号の振幅を試験前の振幅で除した値で
示し、最適記録パワ−は、キャリアレベルと第2高調波
の差が最大となるパワ−とした。Table 1 shows the amount of change in tracking servo, the optimum recording power, and the CNR at the optimum recording power. In addition,
The amount of change in the tracking servo is indicated by a value obtained by dividing the amplitude of the tracking error signal after the repeated test by the amplitude before the test, and the optimum recording power has the maximum difference between the carrier level and the second harmonic. Powerful.
【0020】[0020]
【表1】 [Table 1]
【0021】比較例1〜7 膜厚を変化させた以外は実施例1と同様にして、表2に
示す構造の光磁気記録媒体を作成した。これらの光磁気
記録媒体のトラッキングサ−ボの変化量を実施例1と同
様にして測定し、その結果を併せて表2に示す。第1誘
電体層の薄い構造(20nm)の媒体においては溝特
性、サ−ボ特性に変化が認められた。Comparative Examples 1 to 7 Magneto-optical recording media having the structures shown in Table 2 were prepared in the same manner as in Example 1 except that the film thickness was changed. The amount of change in the tracking servo of these magneto-optical recording media was measured in the same manner as in Example 1, and the results are also shown in Table 2. In the medium having the thin structure (20 nm) of the first dielectric layer, the groove characteristics and the servo characteristics were changed.
【0022】[0022]
【表2】 [Table 2]
【0023】比較例8〜9 膜厚を変化させた以外は実施例1と同様にして、表3に
示す構造の光磁気記録媒体を作成した。これらの光磁気
記録媒体のトラッキングサ−ボの変化量、最適記録パワ
−、最適記録パワ−でのCNRを実施例1と同様にして
測定し、その結果を併せて表3に示す。Comparative Examples 8 to 9 Magneto-optical recording media having the structures shown in Table 3 were prepared in the same manner as in Example 1 except that the film thickness was changed. The tracking servo change amount, the optimum recording power, and the CNR at the optimum recording power of these magneto-optical recording media were measured in the same manner as in Example 1, and the results are also shown in Table 3.
【0024】[0024]
【表3】 [Table 3]
【0025】これらのことより、第1誘電体層の薄い構
造では消去・記録時に光磁気記録層に蓄積された熱が基
板に伝わり繰り返し消去・記録により基板の微小構造で
ある溝の形状が変化するものと考えられるが、反射膜の
膜厚を大きくすることにより基板方向への熱の伝導が減
少し、繰り返し消去・記録による劣化を抑制することが
できると考えられる。From the above, in the thin structure of the first dielectric layer, the heat accumulated in the magneto-optical recording layer at the time of erasing / recording is transmitted to the substrate, and the shape of the groove, which is a minute structure of the substrate, changes due to repeated erasing / recording. However, it is considered that by increasing the film thickness of the reflective film, heat conduction in the substrate direction is reduced and deterioration due to repeated erasure / recording can be suppressed.
【0026】また、トラッキングサ−ボの変化が1.2
を越えた試料はエラ−レイトの変化が50%を越えた。
1.2から1.15の試料では変化は約20%であり、
1.15から1.1の試料では変化は約10%であり、
1.1以下では変化は5%程度であり1.05以下では
変化は認められなかった。Further, the change of the tracking servo is 1.2
The change of the error rate of the samples exceeding 50% exceeded 50%.
The change from about 1.2 to 1.15 is about 20%,
For samples from 1.15 to 1.1 the change is about 10%,
Below 1.1, the change was about 5%, and below 1.05 no change was observed.
【0027】第2誘電体層厚が35nmでは反射膜を厚
くして、トラッキングサ−ボの変化を小さくする効果が
あるが、40nmでは反射膜厚を大きくしてもそのよう
な効果は得られない。これは、光磁気記録層から反射膜
への熱の伝導が十分ではなくなるためと考えられる。When the thickness of the second dielectric layer is 35 nm, there is an effect of thickening the reflection film to reduce the change of the tracking servo, but when it is 40 nm, such an effect can be obtained even if the reflection film thickness is increased. Absent. It is considered that this is because the heat conduction from the magneto-optical recording layer to the reflective film becomes insufficient.
【0028】反射膜厚が120nmでは、100nmに
比較して変化の抑制が飽和しており100nmを越えて
設定しても繰り返し消去・記録に対する改善の効果が出
ていない。100nmを越えると記録パワ−が大きくな
るだけである。When the reflection film thickness is 120 nm, the suppression of change is saturated as compared with 100 nm, and even if the reflection film thickness is set to exceed 100 nm, the effect of improving the repeated erasure / recording is not obtained. If it exceeds 100 nm, the recording power only increases.
【0029】実施例13 Crを含まないAlの反射膜の厚さを変えた試料を実施
例1に準じて製造した。試料の構成はポリカ−ボネイト
基板/第1誘電体層(25nm)/TbFeCo層(1
5nm)/第2誘電体層(35nm)/Al反射膜とし
た。Al反射膜の膜厚は50,60、80、100nm
とした。これらの試料の記録再生特性を実施例1と同様
に記録パワ−、CNRを測定した。CNRは各試料とも
に45dB以上が得られた。記録パワ−を図1に示す。
記録パワ−はAl膜厚50nmにおいても6.0mWと
大きな値であり、また膜厚増加による記録パワ−の増加
は膜厚20nmで約1.0mWである。このように反射
膜としてCrを含まないAlを用いる場合にはCrを含
むAlを用いる場合と比較して記録パワ−が大きいこと
と膜厚増加による記録パワ−増加が大きいことよりAl
膜厚を増して繰り返し消去・記録試験への耐性を向上さ
せるには不利である。Example 13 A sample in which the thickness of the reflection film of Al not containing Cr was changed was manufactured according to Example 1. The sample was composed of a polycarbonate substrate / first dielectric layer (25 nm) / TbFeCo layer (1
5 nm) / second dielectric layer (35 nm) / Al reflective film. The thickness of the Al reflection film is 50, 60, 80, 100 nm
And The recording power and CNR of the recording and reproducing characteristics of these samples were measured in the same manner as in Example 1. The CNR of 45 dB or more was obtained for each sample. The recording power is shown in FIG.
The recording power has a large value of 6.0 mW even when the Al film thickness is 50 nm, and the increase of the recording power due to the film thickness increase is about 1.0 mW at the film thickness of 20 nm. As described above, when Al containing no Cr is used as the reflective film, the recording power is large and the increase in recording power due to the increase in the film thickness is large as compared with the case of using Al containing Cr.
It is disadvantageous to increase the film thickness and improve the resistance to repeated erasure / recording tests.
【0030】実施例14 Crの含有量と膜厚を変えた試料を実施例1に準じて製
造した。試料の構成はポリカ−ボネイト基板/第1誘電
体層(25nm)/TbFeCo層(15nm)/第2
誘電体層(35nm)/反射膜とした。Example 14 Samples having different Cr contents and film thicknesses were manufactured according to Example 1. The composition of the sample is a polycarbonate substrate / first dielectric layer (25 nm) / TbFeCo layer (15 nm) / second
Dielectric layer (35 nm) / reflection film.
【0031】反射膜はAl99Cr1,Al98Cr2,Al
97.5Cr2.5、Al97Cr3(wt%)の4種であり、膜
厚はそれぞれ50,60,80,100,120nmと
した。The reflective film is made of Al 99 Cr 1 , Al 98 Cr 2 , Al
There are four kinds of 97.5 Cr 2.5 and Al 97 Cr 3 (wt%), and the film thicknesses are 50, 60, 80, 100 and 120 nm, respectively.
【0032】これらの試料について実施例1と同様の条
件で繰り返し消去・記録試験を行った。図2に繰り返し
消去・記録試験後のトラッキングエラ−変化を示す。Repeated erasing / recording tests were performed on these samples under the same conditions as in Example 1. FIG. 2 shows the tracking error change after the repeated erasure / recording test.
【0033】Cr量が2.5(wt%)の試料では80
nm以上で1.15以下であり、1wt%と2wt%の
試料では60nm厚以上でトラッキングエラ−の変化は
1.15以下、80nm以上では1.1以下である。こ
れに対して、Cr量が3wt%の試料では膜厚を増大し
ても、トラッキングエラ−変化を十分小さくすることは
できない。80 for a sample with a Cr content of 2.5 (wt%)
In the samples of 1 wt% and 2 wt%, the change in tracking error is 1.15 or less at a thickness of 60 nm or more, and 1.1 or less at 80 nm or more. On the other hand, in the sample having a Cr content of 3 wt%, the tracking error change cannot be sufficiently reduced even if the film thickness is increased.
【図1】 Al反射膜を用いた試料の最適記録パワ−の
反射膜厚依存性を示す図である。FIG. 1 is a diagram showing a reflection film thickness dependence of an optimum recording power of a sample using an Al reflection film.
【図2】 AlCr反射膜の材質と膜厚とを変化させた
ときのトラッキングエラ−変化を示す図である。FIG. 2 is a diagram showing a tracking error change when a material and a film thickness of an AlCr reflective film are changed.
Claims (1)
厚:Anm)、希土類金属と遷移金属からなる光磁気記
録層(膜厚:Bnm)、第2誘電体層(膜厚:Cnm)
および反射膜層(膜厚:Dnm)を有する光磁気記録媒
体において、 膜厚A〜Dがそれぞれ25nm≦A≦33nm、13n
m≦B≦17nm、20nm≦C≦35nm、60nm
≦D≦100nmであり、 第1誘電体層と第2誘電体層とがケイ素と窒素とから構
成され、さらに反射膜層が1.0〜2.5重量%のクロ
ムを含むアルミニウムから構成されることを特徴とする
光磁気記録媒体。1. A substrate having at least a first dielectric layer (film thickness: Anm), a magneto-optical recording layer (film thickness: Bnm) made of a rare earth metal and a transition metal, and a second dielectric layer (film thickness: Cnm).
And a reflective film layer (film thickness: Dnm), the film thicknesses A to D are 25 nm ≦ A ≦ 33 nm and 13 n, respectively.
m ≦ B ≦ 17 nm, 20 nm ≦ C ≦ 35 nm, 60 nm
≦ D ≦ 100 nm, the first dielectric layer and the second dielectric layer are composed of silicon and nitrogen, and the reflective film layer is composed of aluminum containing 1.0 to 2.5% by weight of chromium. A magneto-optical recording medium characterized by the following.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14160294A JP3438004B2 (en) | 1994-06-23 | 1994-06-23 | Magneto-optical recording medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14160294A JP3438004B2 (en) | 1994-06-23 | 1994-06-23 | Magneto-optical recording medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH087365A true JPH087365A (en) | 1996-01-12 |
| JP3438004B2 JP3438004B2 (en) | 2003-08-18 |
Family
ID=15295835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14160294A Expired - Fee Related JP3438004B2 (en) | 1994-06-23 | 1994-06-23 | Magneto-optical recording medium |
Country Status (1)
| Country | Link |
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| JP (1) | JP3438004B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7018696B2 (en) | 2003-04-18 | 2006-03-28 | Target Technology Company Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7045188B2 (en) | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314660B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7374805B2 (en) | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
-
1994
- 1994-06-23 JP JP14160294A patent/JP3438004B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7045188B2 (en) | 1998-06-22 | 2006-05-16 | Nee Han H | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7291374B2 (en) | 1998-06-22 | 2007-11-06 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7384677B2 (en) | 1998-06-22 | 2008-06-10 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7314660B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7314659B2 (en) | 2000-07-21 | 2008-01-01 | Target Technology Company, Llc | Metal alloys for the reflective or semi-reflective layer of an optical storage medium |
| US7316837B2 (en) | 2000-07-21 | 2008-01-08 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7374805B2 (en) | 2000-07-21 | 2008-05-20 | Target Technology Company, Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
| US7018696B2 (en) | 2003-04-18 | 2006-03-28 | Target Technology Company Llc | Metal alloys for the reflective or the semi-reflective layer of an optical storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3438004B2 (en) | 2003-08-18 |
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