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JPH0831304B2 - Method for manufacturing plasma display panel - Google Patents

Method for manufacturing plasma display panel

Info

Publication number
JPH0831304B2
JPH0831304B2 JP61022560A JP2256086A JPH0831304B2 JP H0831304 B2 JPH0831304 B2 JP H0831304B2 JP 61022560 A JP61022560 A JP 61022560A JP 2256086 A JP2256086 A JP 2256086A JP H0831304 B2 JPH0831304 B2 JP H0831304B2
Authority
JP
Japan
Prior art keywords
pattern
electrode
layer
substrate
firing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP61022560A
Other languages
Japanese (ja)
Other versions
JPS62180932A (en
Inventor
衛 宮原
利之 南都
傳 篠田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61022560A priority Critical patent/JPH0831304B2/en
Publication of JPS62180932A publication Critical patent/JPS62180932A/en
Publication of JPH0831304B2 publication Critical patent/JPH0831304B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Description

【発明の詳細な説明】 〔概 要〕 プラズマディスプレイパネルの製造方法であって、IF
層等の中間層を500〜600℃で焼成した際にガラス基板が
所定量収縮し電極パターン等の下位層も収縮するので、
その下位層パターンを当該収縮量を見込した寸法で形成
することにより、位置合わせして形成されるクロストー
ク防止用隔壁等の上位層パターンとの位置合わせ精度を
向上し得る。
DETAILED DESCRIPTION OF THE INVENTION [Summary] A method for manufacturing a plasma display panel, comprising:
When an intermediate layer such as a layer is baked at 500 to 600 ° C., the glass substrate shrinks by a predetermined amount and the lower layers such as the electrode pattern also shrink,
By forming the lower layer pattern in such a size that the contraction amount is expected, it is possible to improve the alignment accuracy with the upper layer pattern such as the partition wall for crosstalk prevention formed by alignment.

〔産業上の利用分野〕[Industrial applications]

この発明は、プラズマディスプレイパネルの製造方法
に係り、さらに詳しく言えば電極の絶縁層やクロストー
ク防止用隔壁の焼成工程におけるガラス基板の収縮を補
償した電極あるいはクロストーク防止用隔壁のパターン
形成法に関する。
The present invention relates to a method for manufacturing a plasma display panel, and more particularly to a method for forming a pattern of an electrode or a crosstalk preventing partition that compensates for shrinkage of a glass substrate in a firing process of an insulating layer of an electrode or a crosstalk preventing partition. .

プラズマディスプレイパネル(以下PDPと記す)のガ
ラス基板には、所定パターンの電極、ガラスの絶縁層
(以下IF層と略す)、隣接放電セルのクロストーク防止
用隔壁を順次積層したものや、前記クロストーク防止用
隔壁上にさらに電極を形成したものがある。一方、それ
ら電極、クロストーク防止用隔壁のパターンは高密度
化、多素子化が進み、ピッチ360μm、パターン幅100μ
m、パターン総数640本におよんでいる。
A glass substrate of a plasma display panel (hereinafter referred to as PDP) has a predetermined pattern of electrodes, a glass insulating layer (hereinafter referred to as IF layer), and a cross talk prevention partition of adjacent discharge cells, which are sequentially laminated, There is one in which an electrode is further formed on the talk preventing partition. On the other hand, the pattern of these electrodes and the barrier ribs for crosstalk prevention is becoming denser and the number of elements is increasing, and the pitch is 360 μm and the pattern width is 100 μm.
m, total of 640 patterns.

したがって、精度が高く、作業効率の良いパネルの製
造方法が要望されていた。
Therefore, there has been a demand for a method of manufacturing a panel with high accuracy and high work efficiency.

〔従来の技術と発明が解決しようとする問題点〕[Problems to be solved by conventional technology and invention]

PDPのガラス基板にはソーダライムガラスが用いられ
るが、この材質はクロストーク防止用隔壁やIF層の焼成
温度である500〜600℃を経過後、第2図に代表例にて示
す如く焼成前の寸法にたいし、焼成1回で収縮代0.0323
%、収縮後0.999679、同じく2回でそれぞれ0.0537%、
0.999473になる。尚、これら収縮代は焼成条件により、
それぞれ0.0261〜0.0398%、0.0407〜0.0549%のばらつ
きがある。
Soda lime glass is used for the glass substrate of the PDP, but this material is used after the firing temperature of the barrier ribs for preventing crosstalk and the IF layer, 500 to 600 ° C, before firing as shown in the representative example in Fig. 2. Shrinkage allowance of 0.0323 per firing
%, 0.999679 after contraction, 0.0537% for each of the same two times,
It becomes 0.999473. The shrinkage allowance depends on the firing conditions.
There are variations of 0.0261 to 0.0398% and 0.0407 to 0.0549%, respectively.

この収縮は230mmのガラス基板ではそれぞれ74μm、1
24μmにおよぶ。従来ピッチが大きく、パターン幅も大
きく、総本数が少ない場合には、この程度の誤差は無視
出来たが、既述の如く最近はピッチ360μm、電極幅100
μm、総数640本の微小、多数パターンが用いられるよ
うになり、これらの収縮値は無視出来ない値となってき
た。
This shrinkage is 74 μm for a 230 mm glass substrate, 1
It reaches 24 μm. In the past, when the pitch was large, the pattern width was large, and the total number was small, such an error could be ignored, but as mentioned above, recently, the pitch is 360 μm and the electrode width is 100 μm.
With the use of small and large number of patterns of 640 μm and a total of 640, the shrinkage values have become non-negligible.

本発明はこのような点にかんがみて考案されたもの
で、簡易な方法で精度の高いパターン形成が可能なPDP
の製造方法を提供することを目的としている。
The present invention has been devised in view of such a point, and a PDP capable of highly accurate pattern formation by a simple method.
It is intended to provide a manufacturing method of.

〔問題点を解決するための手段〕[Means for solving problems]

基板をソーダライムガラスで構成するとともに、該基
板上に電極層を所定ピッチで相互に平行な複数本の線状
電極として形成する際、当該電極層の幅方向のピッチと
電極幅が前記絶縁層を焼成する時のガラス基板の収縮量
を見込んだ寸法分だけ所定寸法よりも大きな寸法となる
パターンで形成し、この後前記絶縁層をガラスペースト
を塗布し焼成することにより形成し、さらに該絶縁層上
に電極パターンの間に位置する関係で所定間隔の平行な
パターンによりクロストーク防止用隔壁層をプリント形
成することを特徴としている。
When the substrate is made of soda lime glass and the electrode layer is formed on the substrate as a plurality of linear electrodes parallel to each other at a predetermined pitch, the pitch in the width direction of the electrode layer and the electrode width are the insulating layer. Is formed by a pattern having a size larger than a predetermined size by a size that allows for the amount of shrinkage of the glass substrate when baking, and then the insulating layer is formed by applying a glass paste and baking the insulating layer. The feature is that the partition layer for crosstalk prevention is printed and formed on the layer by a parallel pattern having a predetermined interval because of being positioned between the electrode patterns.

〔作 用〕[Work]

ガラス基板上に形成された電極層のパターンは、その
上に絶縁層を形成した時に所定量収縮するけれども、そ
の収縮パターンが絶縁層上に形成されるクロストーク防
止用隔壁層のパターンと適度な位置関係になるので、ク
ロストーク防止用隔壁層および電極層のパターン間の位
置ずれは皆無になる。
Although the pattern of the electrode layer formed on the glass substrate shrinks by a predetermined amount when the insulating layer is formed on the electrode layer, the contracted pattern is appropriate to the pattern of the partition layer for crosstalk prevention formed on the insulating layer. Because of the positional relationship, there is no positional deviation between the patterns of the partition layer for crosstalk prevention and the electrode layer.

〔実施例〕〔Example〕

以下図面を参照して本発明の好ましい実施例を詳細に
説明する。
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

第1図は本発明を適用したメモリ形のPDPにおける一
方の電極支持基板の構成を示すもので、1はガラス基
板、2は線状パターンの電極、3はIF層、4はクロスト
ーク防止用隔壁である。
FIG. 1 shows the structure of one electrode supporting substrate in a memory type PDP to which the present invention is applied. 1 is a glass substrate, 2 is a linear pattern electrode, 3 is an IF layer, 4 is for crosstalk prevention It is a partition.

電極パターン2はガラス基板1上に蒸着、スパッタ等
の方法により形成される。IF層3は電極パターン2上に
ガラスペーストを塗布した後、500〜600℃にて焼成する
ことで、形成される。クロストーク防止用隔壁4は、上
記IF層焼成後の電極パターン2に位置合わせ、すなわち
隔壁4のピッチの中央に電極パターン2が正しく配置さ
れるようにしてプリント法により形成される。
The electrode pattern 2 is formed on the glass substrate 1 by a method such as vapor deposition and sputtering. The IF layer 3 is formed by applying a glass paste on the electrode pattern 2 and baking it at 500 to 600 ° C. The crosstalk preventing partition wall 4 is formed by a printing method such that the electrode pattern 2 is aligned with the electrode pattern 2 after firing of the IF layer, that is, the electrode pattern 2 is correctly arranged at the center of the pitch of the partition wall 4.

今、これらパターンの寸法を具体的な数値により説明
する。完成後の電極パターンピッチ360μm、総数640本
の場合、ガラス基板上のこの全パターンが占める幅は0.
36×(640−1)=230.04mmである。従って、IF層焼3
を焼成する前の電極パターン2の、ピッチおよびガラス
基板1の占有幅は、IF層焼成条件により0.9996〜0.9998
倍にばらついて収縮するので、実際の焼成条件に適応し
た収縮比を選択して適用するが、いまその代表的な値と
して、収縮率の中心値0.9997を用いると次のように求め
られる。即ち、 ピッチ=360/0.9997=360.11μm 占有幅=230.04/0.9997=230.11mm である。この寸法による電極パターン2を形成後、IF層
形成のためにIF層用ガラス3を塗布し、500〜600℃の所
定の温度で焼成すると、前述したように電極パターンは
ガラス基板1と共に収縮するが、収縮後のピッチおよび
全パターン幅はこの上に位置合わせされるクロストーク
防止用隔壁パターン4のピッチおよび全パターン幅と一
致する。
Now, the dimensions of these patterns will be described with specific numerical values. When the electrode pattern pitch after completion is 360 μm and the total number is 640, the width occupied by all the patterns on the glass substrate is 0.
36 × (640-1) = 230.04 mm. Therefore, IF layer burning 3
The pitch and the occupied width of the glass substrate 1 of the electrode pattern 2 before firing are 0.9996 to 0.9998 depending on the IF layer firing conditions.
Since the shrinkage varies twice as much and shrinks, a shrinkage ratio suitable for the actual firing conditions is selected and applied. Now, as a typical value, the central value of shrinkage 0.9997 is obtained as follows. That is, pitch = 360 / 0.9997 = 360.11 μm and occupation width = 230.04 / 0.9997 = 230.11 mm. After the electrode pattern 2 having this size is formed, the IF layer glass 3 is applied to form the IF layer, and is baked at a predetermined temperature of 500 to 600 ° C., the electrode pattern shrinks together with the glass substrate 1 as described above. However, the pitch and the total pattern width after contraction match the pitch and the total pattern width of the crosstalk preventing partition wall pattern 4 aligned thereon.

なお収縮には、焼成条件により2.30〜3.98×104のば
らつきがあるので、その焼成条件に従った最適値が上記
範囲から決定される。
Since the shrinkage varies from 2.30 to 3.98 × 10 4 depending on the firing conditions, the optimum value according to the firing conditions is determined from the above range.

他方、本発明者らが先に特願昭60−160952号により提
案した面放電型ガス電パネルにおいては、一方のガラス
基板に電極、IF層、クロストーク防止用隔壁、電極が順
次積層して形成されており、IF層およびクロストーク防
止用隔壁の形成において500〜600℃の焼成工程が含まれ
る。このように焼成工程が2回の場合、第2図に示す如
く更に収縮が進み、第1回目焼成前の寸法から0.0537%
収縮する。従って、2回の焼成工程を有する場合は、該
2回目の焼成後に位置合わせされるパターンの寸法を0.
9993〜0.9996の中から、焼成条件に適して選ばれた収縮
比で割った値を第1回目焼成前の寸法とする。
On the other hand, in the surface discharge type gas electric panel previously proposed by the present inventors in Japanese Patent Application No. 60-160952, an electrode, an IF layer, a partition for crosstalk prevention, and an electrode are sequentially laminated on one glass substrate. It is formed, and includes a firing step at 500 to 600 ° C. in the formation of the IF layer and the partition for preventing crosstalk. In this way, when the firing process is performed twice, the shrinkage further progresses as shown in Fig. 2, and the dimension before the first firing is 0.0537%.
Contract. Therefore, when there are two firing steps, the dimension of the pattern to be aligned after the second firing is set to 0.
A value obtained by dividing by a shrinkage ratio selected from 9993 to 0.9996 suitable for the firing conditions is the dimension before the first firing.

焼成工程が3回以上におよぶ場合も、同様の考え方を
適用する。
The same idea is applied when the firing process is performed three times or more.

〔発明の効果〕 以上述べたように、本発明によれば、極めて簡易な方
法で、高精度の電極およびクロストーク防止用隔壁パタ
ーンが、効率よく形成できるので、PDPの品質向上と原
価低減に寄与しその工業的効果は頗る大である。
[Advantages of the Invention] As described above, according to the present invention, a highly accurate electrode and a partition pattern for crosstalk prevention can be efficiently formed by an extremely simple method, so that it is possible to improve the quality of the PDP and reduce the cost. It contributes and the industrial effect is great.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の1実施例を示す要部断面図、 第2図は焼成によるガラス基板の収縮測定値を説明する
ための図である。 図において、 1はガラス基板、 2は電極パターン、 3はIF層、 4はクロストーク防止用隔壁である。
FIG. 1 is a sectional view of an essential part showing one embodiment of the present invention, and FIG. 2 is a diagram for explaining measured values of shrinkage of a glass substrate by firing. In the figure, 1 is a glass substrate, 2 is an electrode pattern, 3 is an IF layer, and 4 is a partition for crosstalk prevention.

───────────────────────────────────────────────────── フロントページの続き (72)発明者 篠田 傳 神奈川県川崎市中原区上小田中1015番地 富士通株式会社内 (56)参考文献 特開 昭56−109431(JP,A) 特開 昭58−188030(JP,A) 特開 昭57−121125(JP,A) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Den Shinoda 1015 Kamiodanaka, Nakahara-ku, Kawasaki City, Kanagawa Prefecture Fujitsu Limited (56) References JP-A-56-109431 (JP, A) JP-A-58-188030 (JP, A) JP-A-57-121125 (JP, A)

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】プラズマディスプレイパネルの一方の基板
を構成するガラス基板上に所定パターンの電極層を形成
し、さらにその上に所定温度で焼成される絶縁層を形成
した後、所定パターンのクロストーク防止用隔壁を形成
する方法において、 前記基板をソーダライムガラスで構成するとともに、該
基板上に前記電極層を所定ピッチで相互に平行な複数本
の線状電極として形成する際、当該電極層の幅方向のピ
ッチと電極幅が前記絶縁層を焼成する時のガラス基板の
収縮量を見込んだ寸法分だけ所定寸法よりも大きな寸法
となるパターンで形成し、この後前記絶縁層をガラスペ
ーストを塗布し焼成することにより形成し、さらに該絶
縁層上に前記電極パターンの間に位置する関係で所定間
隔の平行なパターンによりクロストーク防止用隔壁層を
プリント形成する ことを特徴とするプラズマディスプレイパネルの製造方
法。
1. A crosstalk having a predetermined pattern after forming an electrode layer having a predetermined pattern on a glass substrate which constitutes one substrate of a plasma display panel and further forming an insulating layer which is baked at a predetermined temperature on the electrode layer. In the method for forming a barrier for prevention, the substrate is made of soda lime glass, and when the electrode layers are formed on the substrate as a plurality of linear electrodes parallel to each other at a predetermined pitch, Form a pattern in which the pitch in the width direction and the electrode width are larger than the predetermined dimension by a dimension that allows for the amount of shrinkage of the glass substrate when firing the insulating layer, and then the insulating layer is coated with a glass paste. Then, the partition wall layer for crosstalk prevention is formed by firing, and is formed on the insulating layer by a parallel pattern having a predetermined interval so as to be located between the electrode patterns. A method for manufacturing a plasma display panel, which comprises forming a print on a substrate.
JP61022560A 1986-02-03 1986-02-03 Method for manufacturing plasma display panel Expired - Lifetime JPH0831304B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61022560A JPH0831304B2 (en) 1986-02-03 1986-02-03 Method for manufacturing plasma display panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61022560A JPH0831304B2 (en) 1986-02-03 1986-02-03 Method for manufacturing plasma display panel

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP7997A Division JP2685048B2 (en) 1997-01-06 1997-01-06 Method for manufacturing substrate assembly for plasma display panel

Publications (2)

Publication Number Publication Date
JPS62180932A JPS62180932A (en) 1987-08-08
JPH0831304B2 true JPH0831304B2 (en) 1996-03-27

Family

ID=12086247

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61022560A Expired - Lifetime JPH0831304B2 (en) 1986-02-03 1986-02-03 Method for manufacturing plasma display panel

Country Status (1)

Country Link
JP (1) JPH0831304B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6097357A (en) 1990-11-28 2000-08-01 Fujitsu Limited Full color surface discharge type plasma display device
DE69318196T2 (en) 1992-01-28 1998-08-27 Fujitsu Ltd Plasma discharge type color display device
US6861803B1 (en) 1992-01-28 2005-03-01 Fujitsu Limited Full color surface discharge type plasma display device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56109431A (en) * 1980-01-31 1981-08-29 Fujitsu Ltd Manufacture of gas discharge panel
JPS58188030A (en) * 1982-04-26 1983-11-02 Fujitsu Ltd Production method of gas discharge panel

Also Published As

Publication number Publication date
JPS62180932A (en) 1987-08-08

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