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JPH08299878A - Rotary coating apparatus and rotary coating method - Google Patents

Rotary coating apparatus and rotary coating method

Info

Publication number
JPH08299878A
JPH08299878A JP11494395A JP11494395A JPH08299878A JP H08299878 A JPH08299878 A JP H08299878A JP 11494395 A JP11494395 A JP 11494395A JP 11494395 A JP11494395 A JP 11494395A JP H08299878 A JPH08299878 A JP H08299878A
Authority
JP
Japan
Prior art keywords
substrate
solvent vapor
processing chamber
gas containing
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11494395A
Other languages
Japanese (ja)
Inventor
Manabu Yabe
学 矢部
Masakazu Sanada
雅和 真田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP11494395A priority Critical patent/JPH08299878A/en
Publication of JPH08299878A publication Critical patent/JPH08299878A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C11/00Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
    • B05C11/02Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
    • B05C11/08Spreading liquid or other fluent material by manipulating the work, e.g. tilting

Landscapes

  • Coating Apparatus (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)

Abstract

PURPOSE: To reduce the use amt. of a coating soln. without generating coating irregularity. CONSTITUTION: A treatment chamber 5 is filled with a gas containing solvent vapor supplied from a solvent vapor supply source 12 through a diffusion passage 13. A substrate 1 is held to a horizontal posture in the treatment chamber 5 by a chuck 2. A nozzle 9 supplies a photoresist liquid to the center of rotation of the substrate 1 and the chuck 2 is rotated and the gas containing solvent vapor is sprayed on the peripheral part of the substrate from a vapor nozzle 17 along the rotary radius of the substrate 1. The photoresist soln. is spread over the surface of the substrate 1 by the centrifugal force by the rotation of the substrate 1 and spread over the surface of the substrate 1 by the pressure of the sprayed gas and spread over the entire surface of the substrate 1 rapidly and uniformly by the centrifugal force and the pressure of the gas. The treatment chamber 5 is filled with the gas containing the solvent vapor and the sprayed gas contains solvent vapor and the generation of coating irregularity is suppressed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、例えばIC、LS
I、液晶表示装置等の電子部品の製造工程における微細
パターンの形成工程において、シリコンウエハに代表さ
れる半導体基板、あるいは誘電体、金属、絶縁体等の基
板を回転させて、フォトレジスト液やシリカ系被膜形成
用塗布液等の塗布液を塗布する回転式塗布装置および回
転式塗布方法に関するものである。
BACKGROUND OF THE INVENTION This invention relates to, for example, ICs and LSs.
I. In the process of forming a fine pattern in the process of manufacturing electronic components such as liquid crystal display devices, a semiconductor substrate typified by a silicon wafer, or a substrate such as a dielectric, metal, or insulator is rotated to produce a photoresist solution or silica. The present invention relates to a rotary coating device and a rotary coating method for coating a coating liquid such as a system coating forming liquid.

【0002】[0002]

【従来の技術】この種の回転式塗布装置は一般に、回転
可能に支持した基板の中心部分に塗布液を滴下し、その
基板を回転させることで塗布液を基板全体に塗り広げ、
その後、余剰の塗布液を振り切るといった方法で基板へ
の塗布を行う。ところで、この種の塗布液は一般に非常
に高価であるため、塗布液の使用量の低減が望まれてい
る。ところが、上述の工程で単に基板への塗布液の供給
量を少なくするだけでは、基板へ滴下した塗布液が回転
により基板の周辺部分まで広がった段階では、その周辺
部分に届いた塗布液は、ある程度乾燥がすすんで粘度が
高くなっていることもあって、遠心力だけでは広がりが
悪く、均一な厚みに塗布することが困難で塗布ムラを生
じるという問題点がある。
2. Description of the Related Art Generally, a rotary coating apparatus of this type drops a coating solution on a central portion of a rotatably supported substrate and rotates the substrate to spread the coating solution over the entire substrate.
After that, coating on the substrate is performed by a method of shaking off the excess coating liquid. By the way, since this type of coating liquid is generally very expensive, it is desired to reduce the amount of the coating liquid used. However, by simply reducing the supply amount of the coating liquid to the substrate in the above process, when the coating liquid dropped on the substrate spreads to the peripheral portion of the substrate by rotation, the coating liquid reaching the peripheral portion is There is a problem that since the drying is advanced to some extent and the viscosity is high, the spread is poor only by centrifugal force, it is difficult to apply a uniform thickness, and uneven application occurs.

【0003】実開昭58−91473号公報に記載のよ
うに、基板上に供給された塗布液に気体を吹き付けるこ
とにより、塗布液を非接触で塗り広げることも提案され
ているが、かかる構成ではかえって塗布液の乾燥を促進
する結果となり、塗布ムラの発生を誘発することになっ
てしまう。特開平2−122519号公報に記載のよう
に、塗布液に吹き付ける気体を塗布液の溶媒の蒸気を含
むものとすることも提案されているが、やはり気体を吹
き付けるときにまわりの空気が巻き込まれることで塗布
液の乾燥を促進してしまい、塗布ムラの発生は不可避で
あった。
As disclosed in Japanese Utility Model Laid-Open No. 58-91473, it has been proposed that the coating liquid is spread in a non-contact manner by blowing a gas onto the coating liquid supplied onto the substrate. On the contrary, it results in promoting the drying of the coating liquid, which induces the occurrence of coating unevenness. As described in Japanese Patent Application Laid-Open No. 2-122519, it has been proposed that the gas sprayed on the coating liquid contains the vapor of the solvent of the coating liquid, but the surrounding air is also entrained when the gas is sprayed. The drying of the coating solution was promoted, and the occurrence of coating unevenness was unavoidable.

【0004】[0004]

【発明が解決しようとする課題】本発明は上述の事情に
鑑みてなされたものであり、塗布ムラを発生させること
なく、塗布液の使用量を低減できる回転式塗布装置およ
び回転式塗布方法を提供することを目的とする。
SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and provides a rotary coating apparatus and a rotary coating method capable of reducing the amount of coating liquid used without causing coating unevenness. The purpose is to provide.

【0005】[0005]

【課題を解決するための手段】請求項1にかかる回転式
塗布装置の発明は、処理室を構成する処理室構成体と、
処理室内に基板を保持して回転させる保持回転手段と、
該保持回転手段に保持された基板の回転中心近傍に塗布
液を供給する塗布液供給手段と、前記処理室内全体に溶
剤蒸気を含む気体を供給する第1の溶剤蒸気供給手段
と、前記保持回転手段に保持された基板の周辺部に溶剤
蒸気を含む気体を吹き付ける第2の溶剤蒸気供給手段と
を有することを特徴とする。
An invention of a rotary coating apparatus according to a first aspect of the present invention includes a processing chamber constructing body which constitutes a processing chamber,
Holding and rotating means for holding and rotating the substrate in the processing chamber;
A coating solution supplying means for supplying a coating solution near the center of rotation of the substrate held by the holding and rotating means; a first solvent vapor supplying means for supplying a gas containing a solvent vapor into the entire processing chamber; Second solvent vapor supply means for spraying a gas containing solvent vapor to the peripheral portion of the substrate held by the means.

【0006】請求項2の発明は、請求項1の回転式塗布
装置において、前記第2の溶剤蒸気供給手段が、前記保
持回転手段に保持された基板の回転半径にそって溶剤蒸
気を含む気体を吹き付けるものである。請求項3の発明
は、請求項1または請求項2の回転式塗布装置におい
て、前記第1および第2の溶剤蒸気供給手段が、同一の
溶剤蒸気供給源につながれているものである。
According to a second aspect of the present invention, in the rotary coating apparatus according to the first aspect, the second solvent vapor supply means is a gas containing a solvent vapor along a radius of gyration of the substrate held by the holding and rotating means. Is what is blown. A third aspect of the present invention is the rotary coating apparatus according to the first or second aspect, wherein the first and second solvent vapor supply means are connected to the same solvent vapor supply source.

【0007】請求項4にかかる回転式塗布方法は、処理
室内に溶剤蒸気を含む気体を供給して処理室内に充満さ
せ、該処理室内に基板を回転可能に保持してその回転中
心近傍に塗布液を供給し、保持回転手段に保持された基
板を回転させながら、その基板の周辺部に溶剤蒸気を含
む気体を吹き付けることにより、供給された塗布液を基
板表面に塗り広げることを特徴とする。
In the rotary coating method according to the fourth aspect, a gas containing a solvent vapor is supplied into the processing chamber to fill the inside of the processing chamber, the substrate is rotatably held in the processing chamber, and the substrate is coated near the center of rotation. It is characterized in that while supplying a liquid and rotating the substrate held by the holding and rotating means, a gas containing a solvent vapor is sprayed on the peripheral portion of the substrate to spread the supplied coating liquid on the substrate surface. .

【0008】[0008]

【作用】請求項1の発明では、塗布液は塗布液供給手段
から基板の回転中心近傍に供給され、基板の回転による
遠心力で基板面にひろげられる。さらにこのとき、第2
の溶剤蒸気供給手段が基板の周辺部に溶剤蒸気を含む気
体を吹き付けるので、塗布液は吹き付けられた気体の圧
力によっても基板面にひろげられる。遠心力と気体の圧
力とが相まって、塗布液は速く且つ均一に基板全面にひ
ろげられる。このとき、処理室は第1の溶剤蒸気供給手
段によって溶剤蒸気を含んだ気体で満たされており、ま
た、第2の溶剤蒸気供給手段から供給される気体も溶剤
蒸気を含んだ気体であるので、塗布液の溶剤の蒸発を過
剰に促進してしまうことはなく、塗布ムラの発生は顕著
に抑制される。
According to the first aspect of the present invention, the coating liquid is supplied from the coating liquid supply means to the vicinity of the center of rotation of the substrate and is spread on the substrate surface by the centrifugal force generated by the rotation of the substrate. At this time, the second
Since the solvent vapor supply means of (3) blows the gas containing the solvent vapor to the peripheral portion of the substrate, the coating liquid can be spread on the substrate surface by the pressure of the blown gas. The centrifugal force and the gas pressure combine to spread the coating liquid quickly and uniformly over the entire surface of the substrate. At this time, the processing chamber is filled with the gas containing the solvent vapor by the first solvent vapor supply means, and the gas supplied from the second solvent vapor supply means is also the gas containing the solvent vapor. Moreover, the evaporation of the solvent of the coating liquid is not excessively accelerated, and the occurrence of coating unevenness is significantly suppressed.

【0009】請求項2の発明では、第2の溶剤蒸気供給
手段が、保持回転手段に保持された基板の回転半径にそ
って溶剤蒸気を含む気体を吹き付けるので、保持回転手
段による回転と相まって、塗布液を基板面に効率よくひ
ろげられる。請求項3の発明では、第1および第2の溶
剤蒸気供給手段が、同一の溶剤蒸気供給源につながれて
おり、装置構成が複雑化しない。
According to the second aspect of the present invention, the second solvent vapor supply means blows the gas containing the solvent vapor along the radius of rotation of the substrate held by the holding and rotating means. The coating liquid can be efficiently spread on the substrate surface. According to the third aspect of the invention, the first and second solvent vapor supply means are connected to the same solvent vapor supply source, and the device configuration does not become complicated.

【0010】請求項4の発明では、塗布液は基板の回転
中心近傍に供給され、基板の回転による遠心力で基板面
にひろげられ、さらにこのとき、基板の周辺部に溶剤蒸
気を含む気体が吹き付けられ、塗布液はその気体の圧力
によっても基板面にひろげられる。処理室は溶剤蒸気を
含んだ気体で満たされており、また、基板の周辺部に吹
き付けられる気体も溶剤蒸気を含んだ気体であるので、
塗布液の溶剤の蒸発を過剰に促進してしまうことはな
く、塗布ムラの発生は顕著に抑制される。
In the invention of claim 4, the coating liquid is supplied to the vicinity of the center of rotation of the substrate and is spread on the surface of the substrate by the centrifugal force due to the rotation of the substrate, and at this time, a gas containing solvent vapor is generated in the peripheral portion of the substrate. The coating liquid is sprayed and spread on the substrate surface by the pressure of the gas. Since the processing chamber is filled with a gas containing solvent vapor, and the gas sprayed on the peripheral portion of the substrate is also a gas containing solvent vapor,
The evaporation of the solvent of the coating liquid is not excessively accelerated, and the occurrence of coating unevenness is significantly suppressed.

【0011】[0011]

【実施例】本発明の実施例である回転式塗布装置を、図
面を参照して以下に説明する。図1は本発明の実施例の
回転式塗布装置を示す模式図である。1は略円形の半導
体ウエハ(以下、基板と称する)、2は基板1の中央を
吸着して水平姿勢に保持するチャック、3はチャック2
を回転駆動するモータである。4は基板1を保持した状
態のチャック2を納めた状態でほぼ密閉状態となる処理
室5を構成する処理室構成体、6は処理室5内に配置さ
れその内部の気流を案内する案内板、7は図示しない排
気源に接続され処理室5内の雰囲気を排気する排気路、
8は基板1に塗布しようとするフォトレジスト液を貯留
し、加圧することにより送り出すフォトレジスト液供給
源、9はフォトレジスト供給源8に対してバルブ10を
有する配管11によって結ばれ、チャック2に保持され
た基板1の回転中心にフォトレジスト液を供給するノズ
ルである。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A rotary coating apparatus which is an embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram showing a rotary coating apparatus according to an embodiment of the present invention. Reference numeral 1 is a substantially circular semiconductor wafer (hereinafter referred to as a substrate), 2 is a chuck for adsorbing the center of the substrate 1 and holding it in a horizontal posture, 3 is a chuck 2
Is a motor for rotating and driving. Reference numeral 4 denotes a processing chamber constituting body which constitutes a processing chamber 5 which is substantially sealed when the chuck 2 holding the substrate 1 is housed therein, and 6 is a guide plate which is disposed in the processing chamber 5 and which guides an air flow therein. , 7 are exhaust paths connected to an exhaust source (not shown) to exhaust the atmosphere in the processing chamber 5,
Reference numeral 8 denotes a photoresist liquid supply source that stores the photoresist liquid to be applied to the substrate 1 and sends the photoresist liquid by pressurizing, and 9 is connected to the photoresist supply source 8 by a pipe 11 having a valve 10 and is attached to the chuck 2. It is a nozzle that supplies a photoresist liquid to the center of rotation of the held substrate 1.

【0012】12はフォトレジスト液供給源8に貯留さ
れているフォトレジスト液の溶剤成分と同一の溶剤を貯
留しており、その溶剤の蒸気を発生させて任意の気体と
混合させるなどしてその溶剤蒸気を含む気体を供給する
溶剤蒸気供給源、13は処理室構成体4の基板1の回転
中心の直上方にあたる位置に開口して処理室5と連通
し、その処理室5内全体に溶剤蒸気を含む気体を拡散さ
せて供給する拡散通路、14は拡散通路13の上端位置
と溶剤蒸気供給源12とを流量計15およびバルブ16
を介して接続する配管、17はチャック2に保持された
基板1の回転中心から離れた周辺部に対面するように処
理室5内に設けられた蒸気ノズル、18は蒸気ノズル1
7と溶剤蒸気供給源12とを流量計19およびバルブ2
0を介して接続する配管、21はチャック2の側方に設
けられ、基板1の下面に向かって溶剤を吹き出して、そ
の下面に回り込んだフォトレジスト液を除去する洗浄ノ
ズル、22は該洗浄ノズル21に配管23とバルブ24
を介して溶剤を供給する溶剤供給源である。蒸気ノズル
17は、図2の(a)の下面図、(b)に示すように、
中空の半球形に形成された下部にスリット25を形成し
てなり、かかるスリット25の長手方向がチャック2に
保持された基板1の回転半径方向に沿うように、基板1
の周辺部に対面するように設けられる。そして、配管1
8から蒸気ノズル17の中に入った溶剤蒸気を含む気体
はスリット25から吹き出されて、基板1の回転半径方
向に沿って基板の周辺部に吹き付けられる。
Reference numeral 12 stores a solvent which is the same as the solvent component of the photoresist liquid stored in the photoresist liquid supply source 8. The vapor of the solvent is generated and mixed with an arbitrary gas. A solvent vapor supply source for supplying a gas containing a solvent vapor, 13 is opened at a position just above the center of rotation of the substrate 1 of the processing chamber constituting body 4 and communicates with the processing chamber 5, and the solvent is entirely distributed in the processing chamber 5. A diffusion passage 14 for diffusing and supplying a gas containing vapor, a flow meter 15 and a valve 16 for connecting the upper end position of the diffusion passage 13 and the solvent vapor supply source 12 to each other.
Piping 17 connected to the substrate 1, 17 is a vapor nozzle provided in the processing chamber 5 so as to face the peripheral portion of the substrate 1 held by the chuck 2 away from the center of rotation, and 18 is the vapor nozzle 1
7 and solvent vapor supply source 12 to a flow meter 19 and a valve 2
Pipes connected via 0, 21 is provided on the side of the chuck 2, a cleaning nozzle that blows the solvent toward the lower surface of the substrate 1 to remove the photoresist liquid that has flowed to the lower surface, and 22 is the cleaning Piping 23 and valve 24 on nozzle 21
It is a solvent supply source for supplying a solvent via the. The steam nozzle 17 is, as shown in the bottom view of FIG.
The slit 25 is formed in the lower portion formed in a hollow hemisphere, and the slit 25 is formed so that the longitudinal direction of the slit 25 is along the rotation radius direction of the substrate 1 held by the chuck 2.
It is provided so as to face the peripheral portion of the. And piping 1
The gas containing the solvent vapor that has entered the vapor nozzle 17 from 8 is blown out from the slit 25, and is blown to the peripheral portion of the substrate along the radial direction of rotation of the substrate 1.

【0013】なお、バルブ10、16、20、24の開
閉やモータ3の回転等、本装置の動作は、図示しないマ
イクロコンピュータ等よりなる制御装置により制御され
る。また、処理室構成体4には、基板1を処理室5へ出
し入れするための図示しない出し入れ口とその出し入れ
口を開閉するシャッタが設けられている。次に、本発明
の回転式塗布方法を、上記装置の動作と共に説明する。
The operation of this device, such as the opening / closing of the valves 10, 16, 20, 24 and the rotation of the motor 3, is controlled by a control device such as a microcomputer (not shown). Further, the processing chamber structure 4 is provided with an unillustrated loading / unloading port for loading / unloading the substrate 1 into / from the processing chamber 5 and a shutter for opening / closing the loading / unloading port. Next, the spin coating method of the present invention will be described together with the operation of the above apparatus.

【0014】本装置の運転が行われるときには、バルブ
16は常時開にされて、溶剤蒸気供給源12から拡散通
路13内へ常に溶剤蒸気を含む気体が供給される。供給
された気体は拡散通路13内で拡散し、均一な状態で処
理室5内へ導入されてその処理室5内に充満する。この
とき、排気路7に連通する排気源も駆動され、処理室5
内は溶剤蒸気を含む気体により下降気流が形成される。
When the apparatus is operated, the valve 16 is normally opened so that the solvent vapor supply source 12 constantly supplies the gas containing the solvent vapor into the diffusion passage 13. The supplied gas diffuses in the diffusion passage 13, is introduced into the processing chamber 5 in a uniform state, and fills the processing chamber 5. At this time, the exhaust source communicating with the exhaust passage 7 is also driven, and the processing chamber 5
A downward airflow is formed in the interior by the gas containing the solvent vapor.

【0015】処理しようとする基板1が前記出し入れ口
から処理室5内へ搬入されて基板1の中心がチャック2
の回転中心と一致するように吸着保持され、出し入れ口
が閉じられて、その基板1に対する塗布処理が開始され
る。図3はモータ3によるチャック2の回転数と、フォ
トレジスト液の吐出や溶剤蒸気を含む気体の処理室5へ
の供給のタイミングとを示すタイムチャートである。バ
ルブ16は常時開であり、溶剤蒸気供給源12から拡散
通路13を通っての処理室5への溶剤蒸気を含む気体の
供給は、常時行われている。
The substrate 1 to be processed is carried into the processing chamber 5 through the loading / unloading port, and the center of the substrate 1 is chucked by the chuck 2.
The substrate 1 is adsorbed and held so as to coincide with the center of rotation, the loading / unloading port is closed, and the coating process on the substrate 1 is started. FIG. 3 is a time chart showing the number of revolutions of the chuck 2 by the motor 3 and the timing of discharging the photoresist liquid and supplying gas containing solvent vapor to the processing chamber 5. The valve 16 is normally open, and the supply of the gas containing the solvent vapor from the solvent vapor supply source 12 to the processing chamber 5 through the diffusion passage 13 is always performed.

【0016】基板1が処理室5へ搬入されると、まず、
チャック2が停止した状態のままで、バルブ10が開か
れて基板1の回転中心近傍にフォトレジスト液が滴下供
給される。バルブ10の開状態は3.5秒間継続される
が、その開状態の間にモータ3の回転駆動が開始され、
チャック2が回転し始める。チャック2の回転速度は1
000rpmまで高められ、4秒の間だけその回転速度
に保たれた後、さらにその後3000rpmまで増加さ
せられるが、回転数が1000rpmに達して1.5秒
程度経ったとき、バルブ20が開かれて、溶剤蒸気を含
む気体が蒸気ノズル17のスリット25から吹き出され
て、基板1の回転半径に沿って基板の周辺部に吹き付け
られる。これにより、供給されたフォトレジスト液は、
基板1の回転による遠心力で基板1の表面に広がるだけ
でなく、吹き付けられた気体の圧力によっても基板1の
表面に押し広げられることになり、遠心力と気体の圧力
とが相まって、フォトレジスト液が速く且つ均一に基板
全面に広げられることになる。このとき、基板1の周囲
は拡散通路13から供給される溶剤蒸気を含んだ気体に
よって満たされており、また、基板1上のフォトレジス
ト液に吹き付けられる気体も溶剤蒸気を含んだ気体であ
るので、フォトレジスト液の溶剤の蒸発を過剰に促進し
てしまうことはなく、塗布ムラの発生は顕著に抑制され
る。バルブ20は3秒間だけ開放され、その間だけ蒸気
ノズル17から基板1周辺部へ溶剤蒸気を含む気体が吹
き付けられる。
When the substrate 1 is loaded into the processing chamber 5, first,
With the chuck 2 stopped, the valve 10 is opened and the photoresist liquid is dripped and supplied near the rotation center of the substrate 1. Although the open state of the valve 10 is continued for 3.5 seconds, the rotational driving of the motor 3 is started during the open state,
The chuck 2 starts to rotate. Rotation speed of chuck 2 is 1
The speed is increased to 000 rpm and kept at that rotational speed for 4 seconds, and then further increased to 3000 rpm, but when the rotational speed reaches 1000 rpm for about 1.5 seconds, the valve 20 is opened. The gas containing the solvent vapor is blown out from the slit 25 of the vapor nozzle 17 and is blown to the peripheral portion of the substrate along the rotation radius of the substrate 1. As a result, the supplied photoresist liquid is
The centrifugal force caused by the rotation of the substrate 1 not only spreads on the surface of the substrate 1 by the centrifugal force but also spreads on the surface of the substrate 1 by the pressure of the blown gas. The liquid can be spread quickly and uniformly over the entire surface of the substrate. At this time, the periphery of the substrate 1 is filled with the gas containing the solvent vapor supplied from the diffusion passage 13, and the gas sprayed on the photoresist solution on the substrate 1 is also the gas containing the solvent vapor. The evaporation of the solvent of the photoresist solution is not excessively promoted, and the occurrence of coating unevenness is significantly suppressed. The valve 20 is opened for 3 seconds, and only during that time, the gas containing the solvent vapor is sprayed from the vapor nozzle 17 to the peripheral portion of the substrate 1.

【0017】チャック2の回転速度が1000rpmか
ら3000rpmまで増加している途中でバルブ20が
閉じられ、蒸気ノズル17からの溶剤蒸気を含む気体の
吹き出しが停止される。その後、チャック2は約20秒
程度の間、3000rpmの速度を保って回転駆動され
る。かかるチャック2の高速回転により、基板1上の余
剰のフォトレジスト液が振り切り除去され、基板1上の
フォトレジスト液が所望の厚みの膜に形成されるととも
に、形成された膜が乾燥される。続いてチャック2の回
転速度が約1200rpmにまで下げられ、その間に、
バルブ24が開かれて洗浄ノズル21から基板1の下面
に向けて溶剤が吹き付けられて、基板1の裏面が洗浄さ
れる。そして、バルブ24が閉じられた後、チャック2
の回転速度が約2000rpmまで高められ、基板1の
裏面に付着した溶剤を振り切り乾燥させる。乾燥が終了
すると、チャック2の回転は停止されてこの基板1の塗
布処理が終了し、この基板1を処理室構成体4の出し入
れ口から搬出するとともに、次なる基板を処理室5へ搬
入するのである。
The valve 20 is closed while the rotation speed of the chuck 2 is increasing from 1000 rpm to 3000 rpm, and the blowing of the gas containing the solvent vapor from the vapor nozzle 17 is stopped. After that, the chuck 2 is rotationally driven at a speed of 3000 rpm for about 20 seconds. By the high speed rotation of the chuck 2, the excess photoresist liquid on the substrate 1 is shaken off and removed, the photoresist liquid on the substrate 1 is formed into a film having a desired thickness, and the formed film is dried. Then, the rotation speed of the chuck 2 is reduced to about 1200 rpm, during which,
The valve 24 is opened, the solvent is sprayed from the cleaning nozzle 21 toward the lower surface of the substrate 1, and the back surface of the substrate 1 is cleaned. Then, after the valve 24 is closed, the chuck 2
The rotation speed of is increased to about 2000 rpm, and the solvent attached to the back surface of the substrate 1 is shaken off and dried. When the drying is completed, the rotation of the chuck 2 is stopped, the coating process of the substrate 1 is completed, and the substrate 1 is carried out from the loading / unloading port of the processing chamber constituting body 4 and the next substrate is loaded into the processing chamber 5. Of.

【0018】〔実験例〕発明者は、基板1として直径8
インチの半導体ウエハを用い、溶媒として乳酸エチルを
含んだ粘度18cPのフォトレジスト液を約1.2μm
の厚みに塗布する場合について実験を行った。本発明の
装置として、基板1よりも上方の容積が約15リットル
の処理室5を形成し、基板1の回転中心から半径方向に
約70mm離れかつ基板1表面から約15mm上方の位
置に上述の如き構造の蒸気ノズル17を、そのスリット
25が基板1の半径方向と一致する向きに設置した。そ
して、フォトレジスト液の溶媒である乳酸エチルの飽和
蒸気を1リットル/minの流量で配管14から拡散通
路13を通して処理室5内へ供給するとともに、上述し
た本発明の方法のタイムチャートのタイミングに従って
蒸気ノズル17から10〜50cc/minの流量で約
3秒間吹き出して供給して塗布の実験を行った。この実
験の結果、ノズル9からのフォトレジスト液の供給量を
約1.2cc程度にまで減少させても、膜厚の均一性が
±20Å程度の範囲に収まる十分に均一な塗布結果が得
られ、かつ複数枚の基板を連続して処理しても安定して
同様の結果を得ることができた。
[Experimental Example] The inventor has found that the substrate 1 has a diameter of 8 mm.
Inch semiconductor wafer is used, and a photoresist solution containing ethyl lactate as a solvent and having a viscosity of 18 cP is about 1.2 μm.
Experiments were carried out for the case of applying the same thickness. As the apparatus of the present invention, a processing chamber 5 having a volume of about 15 liters above the substrate 1 is formed, and the processing chamber 5 is radially separated from the center of rotation of the substrate 1 by about 70 mm and above the surface of the substrate 1 by about 15 mm. The vapor nozzle 17 having such a structure was installed so that the slit 25 thereof was aligned with the radial direction of the substrate 1. Then, saturated vapor of ethyl lactate, which is the solvent of the photoresist solution, is supplied from the pipe 14 into the processing chamber 5 through the diffusion passage 13 at a flow rate of 1 liter / min, and according to the timing of the time chart of the method of the present invention described above. An experiment of coating was conducted by supplying by blowing from the steam nozzle 17 at a flow rate of 10 to 50 cc / min for about 3 seconds. As a result of this experiment, even if the amount of photoresist solution supplied from the nozzle 9 was reduced to about 1.2 cc, a sufficiently uniform coating result was obtained in which the film thickness uniformity was within a range of about ± 20 Å. Moreover, the same result could be stably obtained even when a plurality of substrates were continuously processed.

【0019】なお、以上の実施例では、蒸気ノズル17
から供給する溶剤として、塗布しようとするフォトレジ
スト液の溶媒と同じ溶剤を使用したが、必ずしも同じ溶
剤でなくてもよい。また、蒸気ノズル17の形状やそこ
からの溶剤蒸気の供給のタイミングも、上記実施例のも
のに限らず、さまざまに変更することができる。なお、
以上の実施例においては、チャック2とモータ3とが保
持回転手段に、ノズル9が塗布液供給手段に、拡散通路
13が第1の溶剤蒸気供給手段に、蒸気ノズル17が第
2の溶剤蒸気供給手段に、それぞれ相当する。
In the above embodiment, the steam nozzle 17
Although the same solvent as the solvent of the photoresist solution to be applied was used as the solvent supplied from the above, the solvent does not necessarily have to be the same. Further, the shape of the vapor nozzle 17 and the timing of supply of the solvent vapor from the vapor nozzle 17 are not limited to those in the above-described embodiment, but can be variously changed. In addition,
In the above embodiment, the chuck 2 and the motor 3 serve as the holding and rotating means, the nozzle 9 serves as the coating liquid supply means, the diffusion passage 13 serves as the first solvent vapor supply means, and the vapor nozzle 17 serves as the second solvent vapor. Each corresponds to a supply means.

【0020】[0020]

【発明の効果】請求項1の発明によれば、塗布液は塗布
液供給手段から基板の回転中心近傍に供給され、基板の
回転による遠心力で基板面にひろげられ、さらに第2の
溶剤蒸気供給手段から吹き付けられた気体の圧力によっ
ても基板面にひろげられるので、遠心力と気体の圧力と
が相まって、供給する塗布液が少量であっても、塗布液
は速く且つ均一に基板全面にひろげられる。また、処理
室は第1の溶剤蒸気供給手段によって溶剤蒸気を含んだ
気体で満たされており、第2の溶剤蒸気供給手段から供
給される気体も溶剤蒸気を含んだ気体であるので、塗布
液の溶剤の蒸発を過剰に促進してしまうことはなく、塗
布ムラの発生は顕著に抑制される。その結果、塗布ムラ
を発生させることなく、塗布液の使用量を低減できる。
According to the first aspect of the present invention, the coating liquid is supplied from the coating liquid supply means to the vicinity of the rotation center of the substrate and is spread on the substrate surface by the centrifugal force due to the rotation of the substrate, and further the second solvent vapor is supplied. Since the pressure of the gas blown from the supply means can spread it over the substrate surface, the centrifugal force and the pressure of the gas combine to spread the coating liquid quickly and uniformly over the entire surface of the substrate even if the coating liquid supplied is small. To be Further, the processing chamber is filled with the gas containing the solvent vapor by the first solvent vapor supply means, and the gas supplied from the second solvent vapor supply means is also the gas containing the solvent vapor. The evaporation of the solvent is not excessively accelerated, and the occurrence of coating unevenness is significantly suppressed. As a result, the usage amount of the coating liquid can be reduced without causing uneven coating.

【0021】請求項2の発明によれば、第2の溶剤蒸気
供給手段が、保持回転手段に保持された基板の回転半径
にそって溶剤蒸気を含む気体を吹き付けるので、保持回
転手段による回転と相まって、塗布液を基板面に効率よ
くひろげることができ、さらなる塗布ムラの軽減と塗布
液消費量の低減ができる。請求項3の発明によれば、第
1および第2の溶剤蒸気供給手段が、同一の溶剤蒸気供
給源につながれているので、別途に溶剤蒸気供給手段を
設ける必要がなく、装置構成を簡単にできる。
According to the second aspect of the present invention, the second solvent vapor supply means blows the gas containing the solvent vapor along the radius of rotation of the substrate held by the holding and rotating means. Together, the coating liquid can be efficiently spread on the surface of the substrate, and the coating unevenness and the consumption of the coating liquid can be further reduced. According to the invention of claim 3, since the first and second solvent vapor supply means are connected to the same solvent vapor supply source, it is not necessary to separately provide the solvent vapor supply means, and the apparatus configuration can be simplified. it can.

【0022】請求項4の発明によれば、塗布液は基板の
回転中心近傍に供給され、基板の回転による遠心力で基
板面にひろげられ、さらに、基板の周辺部に溶剤蒸気を
含む気体が吹き付けられ、塗布液はその気体の圧力によ
っても基板面にひろげられる。処理室は溶剤蒸気を含ん
だ気体で満たされており、また、基板の周辺部に吹き付
けられる気体も溶剤蒸気を含んだ気体であるので、塗布
液の溶剤の蒸発を過剰に促進してしまうことはなく、塗
布ムラの発生は顕著に抑制される。その結果、塗布ムラ
を発生させることなく、塗布液の使用量を低減できる。
According to the invention of claim 4, the coating liquid is supplied to the vicinity of the center of rotation of the substrate and is spread on the surface of the substrate by the centrifugal force due to the rotation of the substrate. Furthermore, a gas containing solvent vapor is generated in the peripheral portion of the substrate. The coating liquid is sprayed and spread on the substrate surface by the pressure of the gas. Since the processing chamber is filled with a gas containing solvent vapor, and the gas sprayed on the peripheral portion of the substrate is also a gas containing solvent vapor, it may accelerate the evaporation of the solvent of the coating liquid excessively. However, the occurrence of coating unevenness is significantly suppressed. As a result, the usage amount of the coating liquid can be reduced without causing uneven coating.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の実施例の回転式塗布装置の要部の構
成を示す模式的断面図である。
FIG. 1 is a schematic cross-sectional view showing a configuration of a main part of a rotary coating apparatus according to an embodiment of the present invention.

【図2】蒸気ノズルの構造を示す図である。FIG. 2 is a diagram showing a structure of a steam nozzle.

【図3】装置の制御を示すタイミングチャートである。FIG. 3 is a timing chart showing control of the apparatus.

【符号の説明】[Explanation of symbols]

1 基板 2 チャック 3 モータ 4 処理室構成体 5 処理室 9 ノズル 12 溶剤蒸気供給源 13 拡散通路 17 蒸気ノズル 1 Substrate 2 Chuck 3 Motor 4 Processing Chamber Construct 5 Processing Chamber 9 Nozzle 12 Solvent Vapor Supply Source 13 Diffusion Passage 17 Vapor Nozzle

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/30 564D ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Office reference number FI technical display location H01L 21/30 564D

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】処理室を構成する処理室構成体と、 処理室内に基板を保持して回転させる保持回転手段と、 該保持回転手段に保持された基板の回転中心近傍に塗布
液を供給する塗布液供給手段と、 前記処理室内全体に溶剤蒸気を含む気体を供給する第1
の溶剤蒸気供給手段と、 前記保持回転手段に保持された基板の周辺部に溶剤蒸気
を含む気体を吹き付ける第2の溶剤蒸気供給手段と、を
有することを特徴とする回転式塗布装置。
1. A processing chamber constituting body which constitutes a processing chamber, a holding and rotating means for holding and rotating a substrate in the processing chamber, and a coating liquid supplied to the vicinity of the center of rotation of the substrate held by the holding and rotating means. A coating liquid supply means, and a gas supplying solvent vapor to the entire processing chamber
And a second solvent vapor supply means for spraying a gas containing solvent vapor onto the peripheral portion of the substrate held by the holding and rotating means.
【請求項2】前記第2の溶剤蒸気供給手段は、前記保持
回転手段に保持された基板の回転半径にそって溶剤蒸気
を含む気体を吹き付けるものである請求項1記載の回転
式塗布装置。
2. The rotary coating apparatus according to claim 1, wherein the second solvent vapor supply means blows a gas containing a solvent vapor along a radius of rotation of the substrate held by the holding and rotating means.
【請求項3】前記第1および第2の溶剤蒸気供給手段
が、同一の溶剤蒸気供給源につながれている請求項1ま
たは請求項2記載の回転式塗布装置。
3. The rotary coating apparatus according to claim 1, wherein the first and second solvent vapor supply means are connected to the same solvent vapor supply source.
【請求項4】処理室内に溶剤蒸気を含む気体を供給して
処理室内に充満させ、 該処理室内に基板を回転可能に保持してその回転中心近
傍に塗布液を供給し、 保持回転手段に保持された基板を回転させながら、その
基板の周辺部に溶剤蒸気を含む気体を吹き付けることに
より、供給された塗布液を基板表面に塗り広げることを
特徴とする回転式塗布方法。
4. A gas containing solvent vapor is supplied into the processing chamber to fill the inside of the processing chamber, a substrate is rotatably held in the processing chamber, and a coating liquid is supplied near the center of rotation of the substrate. A rotary coating method, wherein the supplied coating liquid is spread on the surface of the substrate by spraying a gas containing a solvent vapor onto the peripheral portion of the substrate while rotating the held substrate.
JP11494395A 1995-05-12 1995-05-12 Rotary coating apparatus and rotary coating method Pending JPH08299878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11494395A JPH08299878A (en) 1995-05-12 1995-05-12 Rotary coating apparatus and rotary coating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11494395A JPH08299878A (en) 1995-05-12 1995-05-12 Rotary coating apparatus and rotary coating method

Publications (1)

Publication Number Publication Date
JPH08299878A true JPH08299878A (en) 1996-11-19

Family

ID=14650498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11494395A Pending JPH08299878A (en) 1995-05-12 1995-05-12 Rotary coating apparatus and rotary coating method

Country Status (1)

Country Link
JP (1) JPH08299878A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006159034A (en) * 2004-12-03 2006-06-22 Toshiba Corp Inkjet coating device
EP1847328A1 (en) * 1997-12-08 2007-10-24 ASML Holding N.V. Photoresist coating process control with solvent vapor sensor
US7335604B2 (en) 2002-02-22 2008-02-26 Seiko Epson Corporation Thin-film coating apparatus
US8758965B2 (en) 2005-09-22 2014-06-24 Samsung Electronics Co., Ltd. Apparatus and method for manufacturing color filter adsorbing toner nano particles by using electrostatic force
JP2016190236A (en) * 2016-06-10 2016-11-10 株式会社半導体エネルギー研究所 Ink head
JP2017050379A (en) * 2015-09-01 2017-03-09 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1847328A1 (en) * 1997-12-08 2007-10-24 ASML Holding N.V. Photoresist coating process control with solvent vapor sensor
US7335604B2 (en) 2002-02-22 2008-02-26 Seiko Epson Corporation Thin-film coating apparatus
JP2006159034A (en) * 2004-12-03 2006-06-22 Toshiba Corp Inkjet coating device
US8758965B2 (en) 2005-09-22 2014-06-24 Samsung Electronics Co., Ltd. Apparatus and method for manufacturing color filter adsorbing toner nano particles by using electrostatic force
JP2017050379A (en) * 2015-09-01 2017-03-09 株式会社Screenホールディングス Substrate processing apparatus and substrate processing method
JP2016190236A (en) * 2016-06-10 2016-11-10 株式会社半導体エネルギー研究所 Ink head

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