JPH08220203A - Magnetoelectric converting element - Google Patents
Magnetoelectric converting elementInfo
- Publication number
- JPH08220203A JPH08220203A JP7020348A JP2034895A JPH08220203A JP H08220203 A JPH08220203 A JP H08220203A JP 7020348 A JP7020348 A JP 7020348A JP 2034895 A JP2034895 A JP 2034895A JP H08220203 A JPH08220203 A JP H08220203A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- magnetoresistive
- magnetoresistive element
- resistance
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010409 thin film Substances 0.000 claims description 15
- 238000006243 chemical reaction Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 abstract description 103
- 239000004065 semiconductor Substances 0.000 abstract description 33
- 239000002184 metal Substances 0.000 abstract description 10
- 229910052751 metal Inorganic materials 0.000 abstract description 10
- 239000012790 adhesive layer Substances 0.000 abstract description 5
- 239000006185 dispersion Substances 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract description 3
- 229910000859 α-Fe Inorganic materials 0.000 abstract description 2
- 230000005389 magnetism Effects 0.000 abstract 2
- 239000010408 film Substances 0.000 description 21
- 230000035945 sensitivity Effects 0.000 description 11
- 230000007935 neutral effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000001514 detection method Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Landscapes
- Measuring Magnetic Variables (AREA)
- Hall/Mr Elements (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、磁電変換素子に関し、
特に、半導体材料を主材料とする感磁部の温度特性並び
に電気特性の改善が図られた磁電変換素子の構造に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a magnetoelectric conversion element,
In particular, the present invention relates to a structure of a magnetoelectric conversion element in which the temperature characteristics and the electric characteristics of a magnetic sensitive section mainly composed of a semiconductor material are improved.
【０００２】[0002]
【従来の技術】従来、磁気的な現象に応じて電気的な量
を変化させて信号の処理などに利用する磁電変換素子の
１つとして、磁気抵抗素子が知られている。図１は、従
来の磁気抵抗素子の平面構造図であり、図１２は、その
切断線Ａ−Ａに沿う方向からの断面構造図である。図１
及び図１２を参照して、磁気抵抗素子１には、基板２の
表面上に接着層３を介して一対の感磁部２０ａ，２０ｂ
が設けられている。一対の感磁部２０ａ，２０ｂの各々
は、同じ形状及び構造を有している。図１３は、感磁部
の要部構造斜視図である。例えば、一方の感磁部２０ａ
は、図１２及び図１３に示すように、ＩｎＳｂなどの半
導体材料からなる半導体層２１の表面上に所定の間隔で
並んで形成されたショートバー電極２２を有している。
ショートバー電極２２は、例えばＴｉなどの中間層２２
ａとＡｌ、ＩｎあるいはＣｕなどのメタル層２２ｂの積
層構造を有している。中間層２２ａは、例えばメタル層
２２ｂの材料としてＡｌやＣｕを用いた場合に、メタル
層２２ｂと半導体層２１との接合力が低いことに鑑み、
両者の接合力を高めるために設けられている。2. Description of the Related Art Conventionally, a magnetoresistive element has been known as one of magnetoelectric conversion elements which is used for signal processing by changing an electrical quantity according to a magnetic phenomenon. FIG. 1 is a plan structural view of a conventional magnetoresistive element, and FIG. 12 is a sectional structural view taken along a section line AA thereof. FIG.
12, the magnetoresistive element 1 includes a pair of magnetic sensitive parts 20a and 20b on the surface of the substrate 2 with an adhesive layer 3 interposed therebetween.
Is provided. Each of the pair of magnetic sensitive parts 20a and 20b has the same shape and structure. FIG. 13 is a perspective view of the structure of the main part of the magnetic sensing part. For example, one magnetic sensitive section 20a
As shown in FIGS. 12 and 13, each has short bar electrodes 22 formed on the surface of a semiconductor layer 21 made of a semiconductor material such as InSb so as to be arranged at a predetermined interval.
The short bar electrode 22 is an intermediate layer 22 made of, for example, Ti.
It has a laminated structure of a and a metal layer 22b of Al, In, Cu or the like. Considering that the intermediate layer 22a has a low bonding strength between the metal layer 22b and the semiconductor layer 21 when Al or Cu is used as the material of the metal layer 22b, for example,
It is provided to increase the bonding force between the two.
【０００３】上記の磁気抵抗素子１の動作について、図
１４に示す回路図を参照して説明する。一対の感磁部２
０ａ，２０ｂは、電気的に直列に接続されており、直列
接続の一方端は入力電圧Ｖinを印加するための入力端子
に接続され、他方端は接地電位に接続するための接地端
子に接続されている。また、一対の感磁部２０ａ，２０
ｂの中間点は、出力電圧Ｖout を取り出すための出力端
子に接続されている。そして、外部からの磁界が印加さ
れていない状態あるいは一対の感磁部２０ａ，２０ｂに
均等に磁界が作用している状態においては、２つの感磁
部２０ａ，２０ｂの抵抗値は等しくなっているため、出
力電圧Ｖout はＶin／２となっている。また、外部磁界
３０が印加された場合、外部磁界３０の影響を受けて感
磁部２０ａ，２０ｂの各々の抵抗値が変動する。そし
て、この抵抗値の変動を受けて、出力電圧Ｖout の値が
Ｖin／２から変動する。この出力電圧の変動分を検出す
ることにより、外部磁界の検出動作を行う。The operation of the magnetoresistive element 1 will be described with reference to the circuit diagram shown in FIG. A pair of magnetic sensitive parts 2
0a, 20b are electrically connected in series, one end of the series connection is connected to an input terminal for applying an input voltage Vin, and the other end is connected to a ground terminal for connecting to a ground potential. ing. In addition, the pair of magnetic sensitive sections 20a, 20
The middle point of b is connected to the output terminal for taking out the output voltage Vout. The resistance values of the two magnetic sensing parts 20a and 20b are equal to each other when no magnetic field is applied from the outside or when the magnetic field is uniformly applied to the pair of magnetic sensitive parts 20a and 20b. Therefore, the output voltage Vout is Vin / 2. When the external magnetic field 30 is applied, the resistance value of each of the magnetically sensitive parts 20a and 20b changes under the influence of the external magnetic field 30. Then, the value of the output voltage Vout changes from Vin / 2 in response to the change in the resistance value. An external magnetic field detection operation is performed by detecting the variation of the output voltage.
【０００４】[0004]
【発明が解決しようとする課題】従来の磁気抵抗素子
は、磁気抵抗素子の感度（磁界印加時の抵抗値／無磁界
時の抵抗値）が、半導体層２１の材料の有する特性によ
って一様に定められるため、感磁部パターン形成後に任
意の感度レベルに設定できないという不都合があった。In the conventional magnetoresistive element, the sensitivity (resistance value when a magnetic field is applied / resistance value when no magnetic field is applied) of the magnetoresistive element is uniform depending on the characteristics of the material of the semiconductor layer 21. Since it is determined, there is an inconvenience that it is not possible to set an arbitrary sensitivity level after forming the magnetic field sensing pattern.
【０００５】また、従来の磁気抵抗素子は、半導体ウエ
ハーの表面に多数の感磁部を形成し、接着層３を介して
基板２と接着した後、ダイシングにより個々の磁気抵抗
素子をチップに分割して製造される。特に、感磁部２０
ａ，２０ｂの半導体層２１は、スライスした半導体ウエ
ハーを用い、さらにエッチング処理などを施して所望の
膜厚となるように製造される。しかしながら、ウエハー
面上に多数の磁気抵抗素子用の感磁部が形成される場
合、ウエハーの全面に亘って個々の半導体層２１の膜厚
を均一に形成することは困難であり、個々の半導体層２
１の膜厚にばらつきが生じる場合がある。そして、例え
ば、１つの感磁部の半導体層２１内に膜厚の不均一が生
じた場合には、半導体層２１が有すべき抵抗値に誤差が
生じることとなり、設定した抵抗特性を得ることができ
ない。Further, in the conventional magnetoresistive element, a large number of magnetic sensitive portions are formed on the surface of a semiconductor wafer, and after adhering to the substrate 2 via the adhesive layer 3, the individual magnetoresistive elements are divided into chips by dicing. Manufactured. In particular, the magnetic sensing unit 20
The semiconductor layers 21 of a and 20b are manufactured to have a desired film thickness by using a sliced semiconductor wafer and further performing an etching process or the like. However, when a large number of magneto-sensitive elements for magnetoresistive elements are formed on the wafer surface, it is difficult to form the individual semiconductor layers 21 to have a uniform film thickness over the entire surface of the wafer. Layer 2
The film thickness of 1 may vary. Then, for example, when the film thickness is uneven in the semiconductor layer 21 of one magnetic sensitive portion, an error occurs in the resistance value that the semiconductor layer 21 should have, and the set resistance characteristic is obtained. I can't.
【０００６】また、一対の感磁部の各々の半導体層２
１，２１間で膜厚のばらつきが生じると、無磁界時等の
出力端子からの出力電圧Ｖout が中性電圧（Ｖin／２）
からずれる場合が生じる。この中性電圧に誤差が含まれ
ると、磁界が印加された場合の出力電圧の変動分に検出
誤差が生じ、検出精度が低下する。従って、このような
チップを不良品として排除するために製造上の歩留まり
が低下するという問題があった。Further, each semiconductor layer 2 of the pair of magnetic sensitive sections
When the film thickness varies between No. 1 and No. 21, the output voltage Vout from the output terminal when there is no magnetic field is neutral voltage (Vin / 2).
There may be a deviation. If the neutral voltage contains an error, a detection error occurs in the variation of the output voltage when the magnetic field is applied, and the detection accuracy is reduced. Therefore, there is a problem that the manufacturing yield is reduced because such chips are excluded as defective products.
【０００７】本発明の目的は、感度調整が可能であり、
また製造工程における感磁部の膜厚不均一等に起因する
素子の電気特性のばらつきを低減し得る磁電変換素子を
提供することである。An object of the present invention is that the sensitivity can be adjusted,
Another object of the present invention is to provide a magnetoelectric conversion element that can reduce variations in the electrical characteristics of the element due to uneven film thickness of the magnetically sensitive portion in the manufacturing process.
【０００８】[0008]
【課題を解決するための手段】本発明による磁電変換素
子は、両端部を有する所定の平面パターンに形成された
磁気抵抗層と、磁気抵抗層の一主面上に分散して形成さ
れた複数のショートバー電極と、磁気抵抗層の両端部の
間に磁気抵抗層の少なくとも一つの主面に沿って延びる
薄膜抵抗層とを備えている。そして、薄膜抵抗層は、磁
気抵抗層より小さい抵抗率で、かつ小さい温度係数を有
する材料から構成され、薄膜抵抗層の抵抗値は磁気抵抗
層の抵抗値より大きく設定されていることを特徴として
いる。A magnetoelectric conversion element according to the present invention comprises a magnetoresistive layer formed in a predetermined plane pattern having both ends, and a plurality of magnetoresistive layers dispersedly formed on one main surface of the magnetoresistive layer. And a thin-film resistance layer extending between at least both ends of the magnetoresistive layer along at least one main surface of the magnetoresistive layer. The thin-film resistance layer is made of a material having a smaller resistivity than the magnetoresistive layer and a small temperature coefficient, and the resistance value of the thin-film resistance layer is set to be larger than the resistance value of the magnetoresistive layer. There is.
【０００９】[0009]
【作用】本発明による薄膜抵抗層は、磁気抵抗層の両端
部の間に延び、かつ磁気抵抗層の一主面に沿って形成さ
れるため、磁気抵抗層と並列に設置された並列抵抗とし
て機能する。そして、外部から磁界が印加されていない
場合には、磁気抵抗層と薄膜抵抗層との並列合成抵抗が
当該磁気抵抗素子の抵抗として作用し、磁界が印加され
た場合には、薄膜抵抗層の抵抗値は影響を受けず、磁気
抵抗層の抵抗値が磁気抵抗効果によって変動する。従っ
て、この場合の当該磁電変換素子の抵抗は、磁気抵抗層
の抵抗値の変動のみの影響を受けてその抵抗値が変動す
る。Since the thin film resistance layer according to the present invention extends between both ends of the magnetoresistive layer and is formed along one main surface of the magnetoresistive layer, it can be used as a parallel resistor installed in parallel with the magnetoresistive layer. Function. When a magnetic field is not applied from the outside, the parallel combined resistance of the magnetoresistive layer and the thin film resistance layer acts as the resistance of the magnetoresistive element, and when a magnetic field is applied, the thin film resistance layer The resistance value is not affected, and the resistance value of the magnetoresistive layer changes due to the magnetoresistive effect. Therefore, the resistance of the magneto-electric conversion element in this case is affected only by the change in the resistance value of the magnetoresistive layer, and the resistance value changes.
【００１０】すなわち、薄膜抵抗層の膜厚を調整するこ
とにより、磁気抵抗層と薄膜抵抗層との合成抵抗の値を
適宜調整することが可能であり、磁界が印加されない場
合と印加された場合との合成抵抗の比を持って示される
磁電変換素子の感度Ｋ（＝Ｒb ／Ｒ0 ：Ｒb は磁界が印
加された場合の合成抵抗、Ｒ0 は磁界が印加されない場
合の合成抵抗) を所望の値に調整することができる。That is, by adjusting the film thickness of the thin film resistance layer, it is possible to appropriately adjust the value of the combined resistance of the magnetoresistive layer and the thin film resistance layer. When the magnetic field is not applied and when it is applied. The sensitivity K (= Rb / R0: Rb is the combined resistance when a magnetic field is applied, R0 is the combined resistance when no magnetic field is applied) of the magnetoelectric conversion element, which is shown by the ratio of the combined resistance with Can be adjusted to.
【００１１】また、直列に接続された一対の磁気抵抗層
を備える磁電変換素子においては、各磁気抵抗層に対し
て薄膜抵抗層を形成することにより、磁気抵抗層の各々
の膜厚がばらついた場合に対しても、相互の抵抗値のば
らつきを微小に抑制する働きをなす。これにより、外部
磁界が印加されていない状態の出力電圧である中性電圧
のばらつきを抑制することができる。Further, in the magnetoelectric conversion element having a pair of magnetoresistive layers connected in series, the film thickness of each magnetoresistive layer is varied by forming a thin film resistive layer for each magnetoresistive layer. Even in the case, it has a function of slightly suppressing the variation of the mutual resistance values. As a result, it is possible to suppress variations in the neutral voltage, which is the output voltage when the external magnetic field is not applied.
【００１２】[0012]
【実施例】以下、本発明の実施例につき図面を参照しつ
つ説明することにより、本発明を明らかにする。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be clarified by describing embodiments of the present invention with reference to the drawings.
【００１３】第１の実施例 図１は、本発明による磁電変換素子の１つである磁気抵
抗素子の平面構造図であり、図２は、その切断線Ａ−Ａ
に沿う方向からの断面構造図である。この磁気抵抗素子
１は、互いに同じ形状、同じ構造を有する一対の感磁部
１０ａ，１０ｂを有している。一対の感磁部１０ａ，１
０ｂは接着層３を介在してフェライトやガラスなどから
なる基板２の表面上に接合されている。一対の感磁部１
０ａ，１０ｂの一方、例えば感磁部１０ａは、ＩｎＳ
ｂ、ＩｎＡｓ、ＧａＡｓなどのIII−Ｖ族半導体材料か
らなる半導体層１１と、半導体層１１の表面上に形成さ
れたＴｉ層１２と、さらにＴｉ層１２の表面上に分散し
て形成されたメタル層１３を有している。 First Embodiment FIG. 1 is a plan view of the structure of a magnetoresistive element which is one of the magnetoelectric conversion elements according to the present invention, and FIG.
FIG. 6 is a cross-sectional structural view from a direction along the line. The magnetoresistive element 1 has a pair of magnetic sensitive sections 10a and 10b having the same shape and the same structure. A pair of magnetic sensitive parts 10a, 1
0b is bonded on the surface of the substrate 2 made of ferrite or glass with the adhesive layer 3 interposed. A pair of magnetic sensitive parts 1
One of 0a and 10b, for example, the magnetic sensing part 10a, is made of InS.
b, InAs, GaAs, a semiconductor layer 11 made of a III-V group semiconductor material, a Ti layer 12 formed on the surface of the semiconductor layer 11, and a metal formed on the surface of the Ti layer 12 in a dispersed manner. It has a layer 13.
【００１４】半導体層１１は、図示の例ではほぼ平面Ｕ
字形にパターニングされており、その膜厚は５μｍに設
定されている。Ｕ字型の平面パターンの両端部は、配線
接続のための端子部５を構成している。この半導体層１
１は、磁界の影響を受けて電気的抵抗が変化する磁気抵
抗効果を奏する。The semiconductor layer 11 is substantially plane U in the illustrated example.
The film is patterned in a V shape, and its film thickness is set to 5 μm. Both ends of the U-shaped plane pattern form terminal portions 5 for wiring connection. This semiconductor layer 1
1 has a magnetoresistive effect in which the electrical resistance changes under the influence of a magnetic field.
【００１５】Ｔｉ層１２は、半導体層１１の表面に沿っ
て同一形状に形成されており、その膜厚は後述する磁気
抵抗素子の所望の電気特性等を実現し得る厚さに設定さ
れている。The Ti layer 12 is formed in the same shape along the surface of the semiconductor layer 11, and its film thickness is set to a thickness that can realize desired electrical characteristics of a magnetoresistive element described later. .
【００１６】メタル層１３は、いわゆるショートバー電
極を構成しており、例えばＡｌ、Ｉｎ、Ｃｕなどの金属
材料から構成されている。ここで、半導体層１１表面上
に形成されるＴｉ層１２の機能について説明する。図３
は、Ｔｉ層１２が形成された磁気抵抗素子１の等価回路
を示す回路図である。図３において、ＭＲ１，ＭＲ２
は、一対の半導体層１１を示し、Ｒ1 ，Ｒ2はＴｉ層１
２，１２を示している。Ｔｉ層１２は、半導体層１１に
対しては並列に接続された抵抗として作用する。従っ
て、このＴｉ層１２の膜厚の変化によって、本来の磁気
抵抗部を構成する半導体層１１との合成抵抗の値が変化
する。このような並列抵抗を構成するＴｉ層１２の膜厚
による磁気抵抗素子の電気的特性等について説明する。The metal layer 13 constitutes a so-called short bar electrode, and is made of a metal material such as Al, In or Cu. Here, the function of the Ti layer 12 formed on the surface of the semiconductor layer 11 will be described. FIG.
FIG. 4 is a circuit diagram showing an equivalent circuit of the magnetoresistive element 1 in which the Ti layer 12 is formed. In FIG. 3, MR1 and MR2
Indicates a pair of semiconductor layers 11, and R 1 and R 2 are Ti layers 1
2 and 12 are shown. The Ti layer 12 acts as a resistor connected in parallel to the semiconductor layer 11. Therefore, due to the change in the film thickness of the Ti layer 12, the value of the combined resistance with the semiconductor layer 11 that originally constitutes the magnetoresistive part changes. The electrical characteristics and the like of the magnetoresistive element depending on the thickness of the Ti layer 12 forming such a parallel resistance will be described.
【００１７】まず、図４は、磁気抵抗素子１のＴｉ層１
２の膜厚と感度との関係を示している。この図４に示す
ように、Ｔｉ層１２の膜厚を変化させることにより磁気
抵抗素子１の感度Ｋが変化することがわかる。従って、
Ｔｉ層１２の膜厚を適当な値に設定することにより、磁
気抵抗素子１の感度Ｋを所望の値に設定することができ
る。First, FIG. 4 shows the Ti layer 1 of the magnetoresistive element 1.
2 shows the relationship between the film thickness of 2 and the sensitivity. As shown in FIG. 4, it is understood that the sensitivity K of the magnetoresistive element 1 changes by changing the film thickness of the Ti layer 12. Therefore,
By setting the film thickness of the Ti layer 12 to an appropriate value, the sensitivity K of the magnetoresistive element 1 can be set to a desired value.
【００１８】次に、図５は、Ｔｉ層１２の膜厚を種々変
化させた場合の磁気抵抗素子１の感磁部の合成抵抗の変
化率の温度特性を示している。図５（ａ）〜図５（ｃ）
から明らかなように、外部磁界Ｂの大きさに関わらず、
Ｔｉ層１２の膜厚が大きくなるに連れて、温度が上昇し
た際の合成抵抗が低下する割合が減少している。これ
は、Ｔｉの抵抗値の温度依存性を示す温度係数が、半導
体層１１のＩｎＳｂ等の材料の温度係数に比べて小さい
ことによるものである。この結果、Ｔｉ層１２の膜厚を
所定の値に設定することにより、感磁部の合成抵抗の温
度上昇に依存する割合を抑制することができ、磁気抵抗
素子１の温度特性を改善することができる。Next, FIG. 5 shows the temperature characteristics of the rate of change of the combined resistance of the magnetic sensing part of the magnetoresistive element 1 when the film thickness of the Ti layer 12 is variously changed. 5 (a) to 5 (c)
As is clear from the above, regardless of the magnitude of the external magnetic field B,
As the thickness of the Ti layer 12 increases, the rate at which the combined resistance decreases when the temperature rises decreases. This is because the temperature coefficient showing the temperature dependence of the resistance value of Ti is smaller than the temperature coefficient of the material such as InSb of the semiconductor layer 11. As a result, by setting the film thickness of the Ti layer 12 to a predetermined value, it is possible to suppress the ratio of the combined resistance of the magnetic sensing part depending on the temperature rise, and improve the temperature characteristic of the magnetoresistive element 1. You can
【００１９】さらに、図６は、図１に示すような一対の
感磁部を備えた磁気抵抗素子１の中性電圧のばらつきを
示す中性電圧分布図である。一対の感磁部１０ａ，１０
ｂを直列接続し、その中点から出力電圧を取り出す磁気
抵抗素子１は、一対の感磁部の合成抵抗が互いに等しく
設定され、これにより一対の感磁部の間から取り出され
る出力電圧の中性電圧値が印加電圧の１／２（Ｖin／
２）に調整されていることが理想である。これに対し、
本実施例の磁気抵抗素子１は、図６に示すように、印加
電圧Ｖinが５Ｖの場合、Ｔｉ層１２の膜厚を大きくする
に従って、理想的な中性電圧２．５Ｖの近傍に各素子の
中性電圧出力値が集束していることが明らかである。Further, FIG. 6 is a neutral voltage distribution diagram showing variations in the neutral voltage of the magnetoresistive element 1 having a pair of magnetic sensitive portions as shown in FIG. A pair of magnetic sensitive parts 10a, 10
In the magnetoresistive element 1 in which b is connected in series and the output voltage is taken out from the midpoint thereof, the combined resistances of the pair of magnetic sensitive parts are set to be equal to each other, so that the output voltage taken out between the pair of magnetic sensitive parts is The applied voltage value is 1/2 of the applied voltage (Vin /
Ideally, it is adjusted to 2). In contrast,
As shown in FIG. 6, in the magnetoresistive element 1 of the present embodiment, when the applied voltage Vin is 5V, as the film thickness of the Ti layer 12 is increased, each element is near an ideal neutral voltage of 2.5V. It is clear that the neutral voltage output values are focused.
【００２０】上記のように、半導体層１１の表面にＴｉ
層１２を設けることにより、まず、磁気抵抗素子１の感
度を所望のレベルに調整することができる。また、温度
変化によって抵抗値が変化する抵抗の温度特性を改善す
ることができる。さらに、一対の感磁部の抵抗値の相互
のばらつきを微小とし、中性電圧の誤差を微小にするこ
とができる。As described above, Ti is formed on the surface of the semiconductor layer 11.
By providing the layer 12, first, the sensitivity of the magnetoresistive element 1 can be adjusted to a desired level. In addition, it is possible to improve the temperature characteristic of the resistor, the resistance value of which changes with the temperature change. Further, it is possible to make the mutual variation of the resistance values of the pair of magnetic sensitive parts small, and make the error of the neutral voltage small.
【００２１】このような効果を奏するＴｉ層１２は、種
々の検討の結果より、半導体層１１の抵抗値よりもその
抵抗値が大きいことが好ましい。このため、このような
条件を満たす材料であれば、Ｔｉに限定されることなく
適用することができる。From the results of various studies, it is preferable that the Ti layer 12 having such an effect has a resistance value larger than that of the semiconductor layer 11. Therefore, any material satisfying such conditions can be applied without being limited to Ti.
【００２２】次に、上記の第１の実施例による磁気抵抗
素子１については、以下の実施例に示すような変形例の
適用が可能である。まず、第２の実施例による磁気抵抗
素子１は、図７に示すように、半導体層１１の表面上に
ショートバー電極を構成するメタル層１３を形成した
後、メタル層１３全体を覆うように、Ｔｉ層１２を形成
したものである。Next, with respect to the magnetoresistive element 1 according to the first embodiment described above, it is possible to apply a modified example as shown in the following embodiments. First, in the magnetoresistive element 1 according to the second embodiment, as shown in FIG. 7, after the metal layer 13 forming the short bar electrode is formed on the surface of the semiconductor layer 11, the whole metal layer 13 is covered. , Ti layer 12 is formed.
【００２３】また、第３の実施例による磁気抵抗素子１
は、メタル層１３が形成された表面と対向する半導体層
１１の表面にＴｉ層１２を形成したものである。この場
合においても、Ｔｉ層１２は半導体層１１の平面パター
ンに沿って同じ形状に形成されている。Further, the magnetoresistive element 1 according to the third embodiment.
Is a Ti layer 12 formed on the surface of the semiconductor layer 11 facing the surface on which the metal layer 13 is formed. Also in this case, the Ti layer 12 is formed in the same shape along the plane pattern of the semiconductor layer 11.
【００２４】さらに、図９に示す第５の実施例による磁
気抵抗素子１は、図２に示す第１の実施例による磁気抵
抗素子１に対して、基板２に対する感磁部１０ａ（１０
ｂ）の接着方向が異なる構造を有している。Further, the magnetoresistive element 1 according to the fifth embodiment shown in FIG. 9 is different from the magnetoresistive element 1 according to the first embodiment shown in FIG.
It has a structure in which the adhesion direction of b) is different.
【００２５】さらに、図１０に示す第６の実施例による
磁気抵抗素子１は、図７に示す第３に実施例による磁気
抵抗素子１に対して、基板２に対する感磁部１０ａ（１
０ｂ）の接着方向が逆の構成を有している。Further, the magnetoresistive element 1 according to the sixth embodiment shown in FIG. 10 is different from the magnetoresistive element 1 according to the third embodiment shown in FIG.
0b) has the opposite bonding direction.
【００２６】さらに、図１１に示す第６の実施例による
磁気抵抗素子１は、図８に示す第３の実施例による磁気
抵抗素子１に対して、基板２に対する感磁部１０ａ（１
０ｂ）接着方向が逆の構成を有している。Further, the magnetoresistive element 1 according to the sixth embodiment shown in FIG. 11 is different from the magnetoresistive element 1 according to the third embodiment shown in FIG.
0b) The bonding direction is opposite.
【００２７】なお、上記第１ないし第６の実施例による
磁気抵抗素子１は、所定の抵抗率を有するＴｉ層１２を
半導体層１１に対して並列に形成し、その膜厚を調整す
ることによって磁気抵抗素子１の感磁部の合成抵抗値を
調整する構成を示している。しかしながら、Ｔｉ層１２
の平面形状を変化させることによってＴｉ層１２の抵抗
値を所定の値に設定するようにしてもよい。さらには、
Ｔｉ層１２の膜厚及び平面形状の双方を調整することに
よりＴｉ層１２の抵抗値を所望の値に設定してもよい。In the magnetoresistive element 1 according to the first to sixth embodiments, the Ti layer 12 having a predetermined resistivity is formed in parallel with the semiconductor layer 11 and the film thickness is adjusted. The structure which adjusts the synthetic resistance value of the magnetic sensitive part of the magnetoresistive element 1 is shown. However, the Ti layer 12
The resistance value of the Ti layer 12 may be set to a predetermined value by changing the plane shape of the above. Furthermore,
The resistance value of the Ti layer 12 may be set to a desired value by adjusting both the film thickness and the planar shape of the Ti layer 12.
【００２８】[0028]
【発明の効果】以上のように、本発明による磁電変換素
子は、磁気抵抗層と薄膜抵抗層と並設し、薄膜抵抗層の
抵抗値を所定の値に調整している。これによって、磁電
変換素子の感度レベルの調整が可能となる。As described above, in the magnetoelectric conversion element according to the present invention, the magnetoresistive layer and the thin film resistance layer are arranged in parallel, and the resistance value of the thin film resistance layer is adjusted to a predetermined value. Thereby, the sensitivity level of the magnetoelectric conversion element can be adjusted.
【００２９】また、一対の磁気抵抗層を利用する磁気抵
抗素子に対しては、外部磁界が印加されていない場合な
どにおける中性電圧のばらつきを微小とすることによ
り、出力電圧の検出精度のばらつきの少ない磁気抵抗素
子を製造することができる。Further, with respect to the magnetoresistive element utilizing the pair of magnetoresistive layers, the dispersion of the detection accuracy of the output voltage is made small by making the dispersion of the neutral voltage minute when the external magnetic field is not applied. It is possible to manufacture a magnetoresistive element having a small number of components.
【００３０】さらに、薄膜抵抗層の材料として、磁気抵
抗層の材料より温度係数の小さい材料を用いた場合に
は、磁電変換素子の温度特性も改善することができる。Furthermore, when a material having a smaller temperature coefficient than the material of the magnetoresistive layer is used as the material of the thin film resistance layer, the temperature characteristics of the magnetoelectric conversion element can be improved.
【図１】磁電変換素子の一例による磁気抵抗素子の平面
構造図。FIG. 1 is a plan structure diagram of a magnetoresistive element according to an example of a magnetoelectric conversion element.
【図２】図１中の切断線Ａ−Ａに沿う方向からの断面構
造図。FIG. 2 is a cross-sectional structural view from a direction along a cutting line AA in FIG.
【図３】図２に示す磁気抵抗素子の等価回路図。3 is an equivalent circuit diagram of the magnetoresistive element shown in FIG.
【図４】第１の実施例による磁気抵抗素子のＴｉ層の膜
厚と感度との関係を示す感度特性図。FIG. 4 is a sensitivity characteristic diagram showing the relationship between the film thickness of the Ti layer and the sensitivity of the magnetoresistive element according to the first embodiment.
【図５】第１の実施例による磁気抵抗素子の感磁部の抵
抗変化率を示す温度特性図。FIG. 5 is a temperature characteristic diagram showing a resistance change rate of a magnetic sensing portion of the magnetoresistive element according to the first embodiment.
【図６】第１の実施例による磁気抵抗素子の中性電圧の
分布特性図。FIG. 6 is a distribution characteristic diagram of a neutral voltage of the magnetoresistive element according to the first embodiment.
【図７】第２の実施例による磁気抵抗素子の断面構造
図。FIG. 7 is a sectional structural view of a magnetoresistive element according to a second embodiment.
【図８】第３の実施例による磁気抵抗素子の断面構造
図。FIG. 8 is a sectional structural view of a magnetoresistive element according to a third embodiment.
【図９】第４の実施例による磁気抵抗素子の断面構造
図。FIG. 9 is a sectional structural view of a magnetoresistive element according to a fourth embodiment.
【図１０】第５の実施例による磁気抵抗素子の断面構造
図。FIG. 10 is a sectional structural view of a magnetoresistive element according to a fifth embodiment.
【図１１】第６の実施例による磁気抵抗素子の断面構造
図。FIG. 11 is a sectional structural view of a magnetoresistive element according to a sixth embodiment.
【図１２】従来の磁気抵抗素子の一例を示す断面構造
図。FIG. 12 is a sectional structural view showing an example of a conventional magnetoresistive element.
【図１３】図１２に示す磁気抵抗素子の感磁部の要部構
造斜視図。13 is a perspective view showing the structure of a main part of a magnetic sensing section of the magnetoresistive element shown in FIG.
【図１４】従来の磁気抵抗素子の等価回路図。FIG. 14 is an equivalent circuit diagram of a conventional magnetoresistive element.
１…磁気抵抗素子 ２…基板 ３…接着層 １０ａ，１０ｂ…感磁部 １１…半導体層 １２…Ｔｉ層 １３…メタル層 DESCRIPTION OF SYMBOLS 1 ... Magnetoresistive element 2 ... Substrate 3 ... Adhesive layer 10a, 10b ... Magnetic sensitive part 11 ... Semiconductor layer 12 ... Ti layer 13 ... Metal layer
───────────────────────────────────────────────────── フロントページの続き (72)発明者 池田 利昭 京都府長岡京市天神二丁目26番10号 株式 会社村田製作所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Toshiaki Ikeda 2-10-10 Tenjin, Nagaokakyo, Kyoto Prefecture Murata Manufacturing Co., Ltd.
Claims (1)
成された磁気抵抗層と、 前記磁気抵抗層の一主面上に分散して形成された複数の
ショートバー電極と、 前記磁気抵抗層の両端部の間に、前記磁気抵抗層の少な
くとも一つの主面に沿って延びる薄膜抵抗層とを備えて
おり、 前記薄膜抵抗層は、前記磁気抵抗層より小さい抵抗率
で、かつ小さい温度係数を有する材料から構成され、前
記薄膜抵抗層の抵抗値は前記磁気抵抗層の抵抗値より大
きく設定されていることを特徴とする、磁電変換素子。1. A magnetoresistive layer having a predetermined planar pattern having both ends, a plurality of short bar electrodes dispersedly formed on one main surface of the magnetoresistive layer, and a magnetoresistive layer of the magnetoresistive layer. Between both ends, a thin film resistance layer extending along at least one main surface of the magnetoresistive layer is provided, wherein the thin film resistance layer has a smaller resistivity than the magnetoresistive layer, and a small temperature coefficient. A magnetoelectric conversion element, comprising a material having a resistance value of the thin film resistance layer set to be larger than a resistance value of the magnetoresistance layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02034895A JP3339237B2 (en) | 1995-02-08 | 1995-02-08 | Magnetoelectric conversion element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP02034895A JP3339237B2 (en) | 1995-02-08 | 1995-02-08 | Magnetoelectric conversion element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08220203A true JPH08220203A (en) | 1996-08-30 |
| JP3339237B2 JP3339237B2 (en) | 2002-10-28 |
Family
ID=12024629
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP02034895A Expired - Lifetime JP3339237B2 (en) | 1995-02-08 | 1995-02-08 | Magnetoelectric conversion element |
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| Country | Link |
|---|---|
| JP (1) | JP3339237B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0972950A (en) * | 1995-09-07 | 1997-03-18 | Kayaba Ind Co Ltd | Differential magnetoresistive circuit |
| WO2015083604A1 (en) * | 2013-12-02 | 2015-06-11 | コニカミノルタ株式会社 | Signal amplification device and sensor device |
| JP2018107280A (en) * | 2016-12-26 | 2018-07-05 | アルプス電気株式会社 | Magnetic detection device, method of manufacturing magnetic detection device, and current detection device using magnetic detection device |
-
1995
- 1995-02-08 JP JP02034895A patent/JP3339237B2/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0972950A (en) * | 1995-09-07 | 1997-03-18 | Kayaba Ind Co Ltd | Differential magnetoresistive circuit |
| WO2015083604A1 (en) * | 2013-12-02 | 2015-06-11 | コニカミノルタ株式会社 | Signal amplification device and sensor device |
| JP2018107280A (en) * | 2016-12-26 | 2018-07-05 | アルプス電気株式会社 | Magnetic detection device, method of manufacturing magnetic detection device, and current detection device using magnetic detection device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3339237B2 (en) | 2002-10-28 |
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