JPH08220007A - Method for analyzing minute foreign matter, analyzer and method for manufacturing semiconductor element or liquid crystal display element using these - Google Patents

Abstract

(57) [Abstract] [Purpose] Much higher accuracy than the device that adopts the conventional method of linking the device coordinates of the particle inspection device and the device coordinates of other analysis devices such as SEM that are not particle inspection devices. By adopting a method capable of linking with the above, there is provided a method for analyzing a minute foreign substance and an apparatus therefor for observing, analyzing and evaluating the minute foreign substance. [Arrangement] The position of the minute foreign matter on the surface of the sample is obtained by a particle inspection device, the sample is moved onto a coordinate stage of the analyzer, and the position of the minute foreign substance obtained by the inspection device is input to the analyzer, and A method for analyzing a minute foreign matter for analyzing the content of a foreign matter, wherein the device coordinates adopted by the particle inspection device and the device coordinates adopted by the analyzer are determined by using a virtual coordinate system based on a fixed point on the outer circumference of the sample. Link

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for analyzing minute foreign substances existing on the surface of a flat sample such as a silicon wafer for semiconductor devices or an insulating transparent substrate for liquid crystal display devices.
The present invention relates to an analyzer therefor and a method for manufacturing a semiconductor element or a liquid crystal display element using them. For more information,
For minute foreign matter that has been detected and located by a particle inspection device whose device coordinates are defined in advance, by linking the location of the identified minute foreign substance with the coordinates of the analyzer, The present invention relates to a method and an apparatus for easily analyzing, inspecting, and evaluating, and a manufacturing method of a semiconductor element and a liquid crystal display element using them.

Incidentally, the term “analyzer” used herein means light, X
Secondary particles that are irradiated or absorbed by the interaction with the sample by irradiating the sample surface with energy such as rays, electromagnetic waves, electrons, neutral chemical species (atoms, molecules, etc.), ions, and various particle beams such as phonons. By detecting a line, it means an analyzer for investigating the color tone, three-dimensional image, elemental analysis, chemical structure, crystal structure, etc. of the sample surface, or processing the sample surface, such as a metallographic microscope, laser microscope, probe microscope, atomic microscope. Force microscope (hereinafter referred to as AFM), scanning tunneling microscope (hereinafter referred to as STM), magnetic force microscope (hereinafter referred to as
MFM, Scanning Electron Microscope
n Microscope, hereafter referred to as SEM), Electron Probe Micro-Analyse
r, hereinafter referred to as EPMA), X-ray photoelectron spectrometer (X-ray)
Photoelectron Spectrometer (hereinafter referred to as XPS),
Ultraviolet Photoelectron Spectral Spectrometer
ectrometer (hereinafter referred to as UPS), Secondary Ion Mass Spectrometer (hereinafter referred to as SIM)
S), Time of Flight Mass Spectrometer
-SIMS, hereinafter referred to as TOF-SIMS), Scanning Auger Electron Spectromete
r, hereinafter referred to as SAM), Auger electron spectrometer (Auger
Electron Spectrometer (hereinafter referred to as AES), high-speed reflection electron beam diffractometer (Reflection High Energy Electron)
Diffraction Spectrometer, hereafter called RHEED),
High Energy Electron Diffracti
on Spectrometer, hereinafter referred to as HEED), Low Energy Electron Diffraction Spectrom
eter, hereinafter referred to as LEED), Electron Energy-Loss Spectrometer, hereinafter referred to as EE
LS), Focused Ion Beam System (Focused Ion Be)
am instruments, hereafter referred to as FIB), Particle Induced X-ray Emission Spectroscopy, hereafter P
IXE), microscopic Fourier transform infrared spectroscope (hereinafter referred to as microscopic FT-IR), analysis of microscopic Raman, etc.,
Equipment with functions for inspection, evaluation, processing, observation equipment,
Refers to analysis equipment, inspection equipment and evaluation equipment.

[0003]

2. Description of the Related Art It is said that defects in ultra-high-integrated LSIs represented by 4M-bit and 16M-bit DRAMs are mostly caused by defects caused by foreign matter adhering to the wafer.

This is because as the pattern width becomes finer, it adheres to the wafer in the manufacturing process of the previous process.
This is because minute size foreign matter, which has not been a problem in the past, becomes a pollution source. It is generally said that the size of the minute foreign matter that causes this problem is a fraction of the minimum wiring width of the ultra-high integration LSI to be manufactured.
In bit-DRAM (minimum wiring width 0.5 μm), minute foreign substances having a diameter of 0.1 μm level are targeted. Such minute foreign substances become pollutants and cause disconnection and short circuit of the circuit pattern, which greatly leads to the occurrence of defects and deterioration of quality and reliability. Therefore, the key point for improving the yield is to quantitatively and accurately measure and analyze the actual condition such as the adhered state of the minute foreign matter to grasp and manage it.

As a means for doing this, conventionally, a particle inspection apparatus has been used which is capable of detecting the existence position of minute foreign matter existing on the surface of a flat sample such as a silicon wafer. As a conventional particle inspection device,
Hitachi Electronic Engineering Co., Ltd., device name; IS-2
000, LS-6000 or manufactured by Tencor, USA; device name: Surfscan 6200; Estek, device name: WIS-9000. Further, regarding the measurement principle used in these particle inspection devices and the device configuration for realizing them, for example, refer to documents,
"High-performance semiconductor process analysis and evaluation technology", 111-
For details, see page 129, edited by Semiconductor Technology Research Group, published by Realize Co., Ltd.

FIG. 10 shows a particle inspection apparatus LS-60.
00 is used to display a CRT display screen showing the measurement results of minute foreign matter (0.1 μm or more) present on an actual 6-inch silicon wafer. That is, this display screen shows only the approximate position of the minute foreign matter, the number of each minute foreign matter, and its particle size distribution. The circle shown in FIG. 10 represents the outer circumference of a 6-inch silicon wafer, and the points existing therein correspond to the positions where minute foreign matter exists. It should be noted that the particles and foreign substances described here mean some different parts such as convex parts, concave parts, adhered particles, and defects with respect to the wafer, and are parts where light scattering (diffuse reflection) occurs.

However, as can be seen from FIG. 10, since the information obtained from the conventional particle inspection apparatus is only the size of the minute foreign matter existing on the sample surface such as a silicon wafer and the existing position on the sample surface, It is not possible to identify the actual state of what the minute foreign substance is.

For example, FIG. 6 shows an IC inspection microscope device MODER: IM-12 sold by NIDEK CO., LTD.
It is explanatory drawing which shows the basic composition of the conventional metal microscope with an actuator which is an example of the metal microscope with a positioning function used for the detection of the conventional minute foreign material seen in 0 etc.
In FIG. 6, a sample silicon wafer 2 is placed on an xy actuator 1 having coordinates roughly linked to the coordinates of the particle inspection apparatus. The foreign matter 7 detected by the particle inspection apparatus is xy based on the position information of the foreign matter obtained from the particle inspection apparatus.
The actuator 1 allows the metal microscope 3 to be carried to the visual field or its vicinity. The inspection procedure and the inspection result when inspecting the foreign matter 7 existing on the surface of a planar silicon wafer using a conventional metal microscope with an actuator will be described below.

First, a plurality of slightly dirty mirror-polished silicon wafers 2 {CZ (plane orientation; 100) 6 inch diameter silicon wafer manufactured by Mitsubishi Materials Silicon} are used for particle inspection equipment {US; manufactured by Tencor Corporation, apparatus name. Surf scan 6200}, and the approximate size of the foreign matter present on the silicon wafer 2 and its approximate location were observed. On the silicon wafer 2, about 800 foreign matters having an average diameter of 0.1 to 0.2 μm, about 130 foreign matters having a diameter of 0.2 to 0.3 μm, and 0.3 to 0 are randomly placed at random positions. Approximately 30 foreign substances with a level diameter of 4 μm and approximately 13 foreign substances with a level diameter of 0.4 to 0.5 μm
There were about 15 particles each having a diameter of 0.5 μm or more. In the coordinates of the surf scan 6200, the direction in contact with the orientation flat (hereinafter referred to as orientation flat) of the wafer is the x-axis (or y-axis) direction, and the perpendicular direction in the wafer plane is the y-axis (or x-axis) direction. Then, the outermost circumference of the wafer was measured at three or more points (however, the orientation flat portion was avoided), and this was applied to the equation of a circle or an ellipse to set the center position of the wafer to (0, 0). Is defined in the form.

Next, using a conventional metallurgical microscope with an actuator, the direction of contact with the orientation flat of the wafer is x.
Axial direction, vertical direction on the wafer surface is y-axis (or x-axis) direction, and the outermost circumference of the wafer is measured at 3 points (however, the orientation flat part is avoided), and this is converted into a circle equation. By fitting, the center position of the wafer is (0,0)
In this manner, the silicon wafer 2 is set on the xy actuator 1, and the xy actuator 1 is moved based on the position information of the foreign matter obtained from the particle inspection apparatus, so that the foreign matter of each size is metalized. An attempt was made to observe using the microscope 3 (the observation was performed by fixing the magnification of the eyepiece lens at 20 times and varying the objective lens at 5, 20, and 50 times).

As a result, when a 5 × objective lens of a metallurgical microscope was used, it was barely possible to find a foreign substance having a level diameter of 0.4 to 0.5 μm as a dark spot, and a foreign substance smaller than that was hardly found. . In addition, all the foreign matters of 0.4 μm or more could be found. On the other hand, the objective lens 5
When 0 times was used, a foreign substance having a level diameter of 0.2 to 0.3 μm was rarely found as a dark spot. However, almost no foreign matter smaller than that was found. Therefore, in order to investigate the cause, the amount of coordinate deviation at this time was investigated by using a plurality of wafers in which a grid pattern was engraved. As a result, in the xy coordinate display, the origin position or the center position of the wafer and its It was found to have a deviation amount of approximately (± 250 μm, ± 250 μm) with respect to any point that can be defined inside.

On the other hand, the field of view of the apparatus used this time when the objective lens is magnified 5 times is about 1500 μmφ, whereas it is only about 150 μmφ when the objective lens is 50 times magnified.

That is, when the objective lens is 50 times,
Most of the foreign substances with a level diameter of 2 to 0.3 μm could not be found because the objective lens magnification was changed from 5 times to 50 times as high as that of the microscope. Becomes larger, and the target is 0.2 to 0.
It was found that the foreign matter with the 3 μm level diameter was not contained within the field of view of the current device.

[0014]

Therefore, it is necessary to identify the actual state of each minute foreign substance by directly observing it or analyzing its composition by using an appropriate analyzer such as SEM. Becomes However, since the position on the wafer where each minute foreign substance obtained from the particle inspection device exists is defined in the device coordinates of the particle inspection device, it does not necessarily coincide with the device coordinates of the analysis device which is not the particle inspection device. Further, when a sample such as a wafer that has been inspected for foreign matter by a particle inspection apparatus is set in an analyzer such as an SEM that is not a particle inspection apparatus, a coordinate deviation error will occur due to new setting. Therefore, in order to identify the actual condition of the minute foreign matter, by using some measure, the device coordinates possessed by the particle inspection device and the device coordinates possessed by the analyzer other than the particle inspection device such as SEM are highly accurately linked. Is required.

Therefore, the device coordinates possessed by the xy stages of the individual particle inspection devices and the analysis devices such as SEM which are not particle inspection devices were examined. As a result, it was found that, in most of the devices, the coordinates of the xy stage adopted were the xy coordinate system. Also,
The coordinate axes and origin position of each device with respect to the wafer to be measured are determined by (1) the direction in contact with the orientation flat of the wafer is the x-axis (or y-axis) direction, and the perpendicular direction in the wafer plane. Is the y-axis (or x-axis) direction,
Further, a method of defining the intersection of the outermost periphery of the wafer and the y axis as (0, y) and the intersection of the x axis as (0, 0) (see FIG. 11A), or (2) wafer Is the x-axis (or y-axis) direction in contact with the orientation flat, the perpendicular direction is the y-axis (or x-axis) direction in the wafer plane, and three or more sample points at the outermost periphery of the wafer are A method is adopted in which the center position of the wafer is defined as the origin (0, 0) by measuring and applying this to a circular or elliptic equation (see FIG. 11B).

However, in these methods, the functions used for defining the coordinates are different and the number of sample points are different depending on each device, and thus the defined coordinates themselves are different. Also, the difference in surface accuracy or subtle size of the orientation flat portion and the outermost peripheral portion of each wafer,
Or, the position of the sample point may inevitably be varied due to the adjustment of the wafer on the sample table or the slight warpage of the wafer.Therefore, for each wafer or for each setting at the coordinate axis and the origin position or the center position. Misalignment may occur. As a result, in the conventional simple “coordinate link method of inputting position information of minute defects and foreign substances detected by the particle inspection device to the coordinates of the analysis device which is not the particle inspection device”, the A deviation occurs in the coordinate axis of the device coordinates with respect to and the origin position. Therefore, it becomes impossible to set a minute defect or foreign matter in the field of view of the apparatus at the magnification that can analyze the minute foreign matter of the analyzer. That is, it is necessary to increase the magnification in order to inspect the minute foreign matter, but if the magnification is increased, the field of view which is the inspection area or the analysis area becomes narrow.

Therefore, the amount of coordinate deviation caused by the above-mentioned reason was investigated for various devices using a plurality of wafers in which a grid pattern was engraved.・ Even particle inspection equipment, equipment name; IS-2000 and Hitachi, Ltd., measuring SEM, equipment name; S-7000) are defined in the origin position or center position and in the xy coordinate display. It was found that the amount of deviation was approximately (± 100 μm, ± 100 μm) with respect to any possible point. For this reason, the SE for the minute foreign matter at an arbitrary position on the wafer detected by the particle inspection device is detected.
When observing or analyzing with an analyzer such as M, which is not a particle inspection apparatus, and trying to evaluate, at least around the position where the minute foreign matter detected by the particle inspection apparatus is considered to be (± 100 μ
m, ± 100 μm) or more (200
μm × 200 μm = 40000 μm ² , SEM magnification 5
In the field of view of the SEM at a magnification of 00), observation is performed using an analyzer that is not a particle inspection device such as an SEM, and after confirming the position of the minute foreign matter, the original purpose is expanded by some method such as enlarging the portion. It is necessary to observe or analyze and evaluate the minute foreign matter. Therefore, it takes a considerable time.

Now, in order to intuitively grasp what the size of this region is for a minute foreign substance, the presently relatively high resolution is obtained in this range of 40,000 μm ² (200 μm × 200 μm). It is possible to detect by calculating the detection range (area) occupied by one pixel of the CCD camera, assuming that the observation is performed using a CCD camera of 1 million pixels which is considered to be a CCD camera with Let us consider the size of minute foreign matter that is considered to exist. Detection range occupied by one pixel in the conditions above, obtained a 0.04 .mu.m ² (4 million in [mu] m ² ÷ 100 million in = 0.2μm × 0.2μm) from the calculation. On the other hand, since it is difficult to identify an object having a size less than one pixel, the detection limit for minute foreign matter is 0.04 μm ² (0.2 μm × 0.2 μm).
m). That is, 100 μm of a fine foreign substance having a projected area of 0.04 μm ² or less (diameter of about 0.2 μm) is directly applied.
It can be seen that it is difficult to detect using a CCD camera of 10,000 pixels and it is extremely difficult to specify the position of the minute foreign matter. Furthermore, it is almost impossible to specify the position of the minute foreign matter of 0.2 μm or less.

From the above, based on the device coordinates of the particle inspection device, it is possible to detect an SEM or other analysis device, which is not a particle inspection device, for a minute foreign substance having a diameter of about 0.2 μm or less, which is conventionally detected by the particle inspection device. It is generally difficult to specify the position of the minute foreign matter and directly observe or evaluate the minute foreign matter by linking with the device coordinates.

On the other hand, in order to correlate the locations of the foreign matters existing in the wafer between the foreign matter inspection apparatus and the analysis apparatus, the position coordinate data of the detected minute foreign matters are stored and shared, and the file conversion and the coordinate conversion are performed. Japanese Unexamined Patent Publication No. 4-123454 discloses a method of correcting positional deviation between devices by providing shared position coordinate data in each device by providing interface means for performing the above. In addition, a standard coordinate system is set for the wafer, and each inspection device is provided with a conversion unit for the standard coordinate system and the coordinate system unique to each inspection device to perform all coordinate input / output according to the standard coordinate system. Japanese Patent Laid-Open No. 3-102845 discloses a method of performing all of the coordinate systems in accordance with the standard coordinate system. However, in all of these methods, the coordinate system is set in each device with reference to, for example, the leftmost point on the scribe line on the wafer or around the wafer, or the standard coordinate system is used. The coordinate axis itself deviates due to the detection accuracy of the left end point (even if the direction in the x-axis direction is slightly tilted, it changes greatly), and it is not an invariant coordinate axis. Therefore, it is impossible to prevent an error in the coordinate axes between the devices.

The present invention has been made in order to solve such a problem, and links the device coordinates of the particle inspection device and the device coordinates of another analysis device such as an SEM which is not the particle inspection device with the conventional device coordinates. An object of the present invention is to provide a method and an apparatus for analyzing minute foreign matter, which enables observation, analysis and evaluation of minute foreign matter by adopting a method capable of linking with much higher accuracy than an apparatus adopting the method. And

Another object of the present invention is to analyze the semiconductor element or the liquid crystal display element in the process of manufacturing the semiconductor element or the liquid crystal display element by analyzing minute foreign matters on the surface of an insulating transparent substrate such as a wafer or glass by using the analysis method. It is an object of the present invention to provide a method for manufacturing a semiconductor element or a liquid crystal display element, which improves the yield of the liquid crystal display element and the like and improves the reliability.

[0023]

A method for analyzing minute foreign matter according to the present invention comprises: determining the position of a minute foreign matter on the surface of a sample in a particle inspection device, transferring the sample onto a coordinate stage of the analysis device, A method for analyzing a minute foreign substance, which comprises inputting the obtained position of the minute foreign substance into an analyzer to analyze the contents of the minute foreign substance, wherein the device coordinates adopted by the particle inspection device and the device coordinates adopted by the analyzer are provided. And are linked by using a virtual coordinate system based on a fixed point on the outer circumference of the sample.

The temporary coordinate system is defined by an arbitrary temporary sample point on the outer circumference, and a fixed point on the outer circumference of the sample can be determined by setting a point on the outer circumference on the temporary coordinate system as a sample point.

The sample is a circular wafer having an orientation flat, and at least three points of the circular portion of the wafer and at least two points of the orientation flat portion are used by using the respective device coordinates of the particle inspection device and the analysis device. The measurement is performed as a temporary sample point, the circular temporary center coordinates of the sample and the temporary tilt of the orientation flat are obtained from the coordinates of the measured temporary sample point, and the direction of the temporary tilt is determined as the x-axis or y.
An xy coordinate system having an origin at the center coordinate of the circle as an axis is a temporary coordinate system, and at least three points of the circular portion and at least two points of the orientation flat portion are sample points at fixed points in the temporary coordinate system. The coordinates of the circular center of the sample and the inclination of the orientation flat are determined from the coordinates of the sample point, and the xy coordinate system having the origin of the central coordinates of the circle with the direction of the inclination as the x-axis or the y-axis is a virtual coordinate system. Can be determined.

It is possible to reduce the error by selecting four or more sample points in the circular part and three or more points in the orientation flat part and obtaining the center coordinates of the circle and the inclination of the orientation flat from the measured coordinates by the least square method. It is preferable because it can

The wafer may be a semiconductor element during the manufacturing process or a semiconductor wafer on which the element is being formed.

The sample is a rectangular substrate, and the corners of the rectangular substrate are measured as sample points by using the respective device coordinates of the particle inspection device and the analysis device,
A central coordinate obtained by the intersection of the perpendicular bisectors of two specific sides of the polygon and a temporary inclination obtained by any two points of one specific side are obtained, and a temporary coordinate system is defined by the temporary inclination and the central coordinate. It is possible to obtain the inclination of the specific side by the sample points which are the fixed points of the specific side in the temporary coordinate system, and determine the virtual coordinate system by the inclination and the center coordinates.

The sample is a rectangular substrate, and the device coordinates of the particle inspecting device and the analyzing device are used to measure any two points other than the corners on the two specific sides of the rectangular substrate as sample points. Then, the provisional inclinations of the specific two sides are calculated from the respective two points, and the straight lines in contact with the directions of the provisional inclinations are defined as the provisional x-axis and provisional y-axis, respectively, and the intersection is defined as the provisional center coordinate to define the provisional coordinate system. , At least two sample points at fixed points in the provisional coordinate system are set on each of the specific two sides, the inclinations of the two sides are obtained from the positions of the sample points, and contact with the direction of the inclination It is preferable to define the virtual coordinate system with the straight lines as the x-axis and the y-axis, respectively, when the corners of the rectangular substrate are rounded.

It is preferable to determine three or more sample points on each of the specific sides and obtain the slope of the specific side from the measurement coordinates of the three or more points by the least square method to reduce the error.

The prismatic substrate may be a liquid crystal display element in the middle of the manufacturing process or an insulating transparent substrate on which the element is being formed.

A micro foreign matter analyzer of the present invention is an analyzer for analyzing a micro foreign matter by mounting a sample, the position of which is detected by a particle inspection apparatus, on a stage, and analyzing the micro foreign matter. Means for obtaining a virtual coordinate system based on the above fixed point and coordinate conversion means for converting coordinates between the virtual coordinate system and device coordinates are added.

Means for determining the virtual coordinate system means for determining a temporary coordinate system based on temporary sample points on the outer circumference of the sample;
The virtual coordinate system may be defined by a fixed point sample point on the outer circumference of the sample defined by the temporary coordinate system.

The particle inspection apparatus of the present invention is a particle inspection apparatus for detecting minute foreign matter on a sample,
Means for obtaining a virtual coordinate system based on a fixed point on the outer circumference of the sample and coordinate transformation means for transforming coordinates between the virtual coordinate system and device coordinates are added.

It is preferable to determine three or more sample points on each of the specific sides and obtain the slope of the specific side from the measurement coordinates of the three or more points by the least square method in order to reduce the error.

The analyzing device in each of the analyzing methods or analyzing devices is a metallographic microscope, a scanning electron microscope, a scanning laser microscope, a microscopic infrared spectroscopic device for analyzing a chemical structure,
Micro Raman spectroscope, Photoluminescence device for fluorescence spectroscopic analysis, Electron probe microanalysis device for surface trace element analysis, Auger electron spectroscope, Electron energy loss spectroscope, Secondary ion mass spectroscope, Time-of-flight mass spectroscope Equipment, particle beam excitation X-ray spectroscope, high-speed backscattered electron diffractometer for crystal analysis, focused ion spectroscope for surface processing, X-ray photoelectron spectroscope for chemical structure analysis, ultraviolet electron photospectrometer, and scanning Type probe microscope, atomic force microscope, scanning tunnel microscope, and magnetic force microscope.

The method of manufacturing a semiconductor device of the present invention includes at least a cleaning step, a film forming step, an exposing step, an etching step,
2. A method of manufacturing a semiconductor device, comprising a step including an ion implantation step, a diffusion step, and a heat treatment step, wherein at least one of the steps is accompanied by an inspection step, and at least one of the inspection steps is set forth in claim 1. A method or an apparatus according to claim 11 is used to analyze minute foreign matter.

Further, in the method for producing a liquid crystal display element of the present invention, a TFT substrate in which at least a thin film transistor and a pixel electrode are provided on an insulating transparent substrate and a counter substrate in which at least a counter electrode is provided on the insulating transparent substrate are fixed. A method of manufacturing a liquid crystal display device, in which a liquid crystal material is injected into the space while holding a space between the substrates, and a liquid crystal material is injected into the space. At least one of the step and the ion implantation step is accompanied by an inspection step, and at least one of the inspection steps is for analyzing a minute foreign substance by the method according to claim 1 or the apparatus according to claim 11.

[0039]

According to the method for analyzing microscopic foreign matter according to claim 1,
Since the link between the device coordinates of the particle inspection device and the device coordinates of the analysis device is performed through a virtual coordinate system based on a fixed point on the outer circumference of the sample, the center coordinate of the sample that is the virtual coordinate system is the true center of the circle. However, the coordinate system is always based on a fixed point on the outer circumference of the sample. Therefore, it is possible to make a very accurate and highly accurate correspondence. As a result, the rough position of the fine foreign matter detected by the particle inspection device can be reliably set within the field of view of the analysis device in a short time at a magnification at which the analysis device can identify the fine foreign matter, and the analysis of the fine foreign matter can be performed efficiently. You can

According to the analysis method of the second aspect, the coordinates of the center of the temporary sample point are not always the true center of the circle, but the temporary center coordinates are used as a reference to locate the sample on the outer periphery of the sample at a certain distance. Since the sample points are set, the sample points are almost fixed points on the sample. Therefore, it is not necessary to mark a sample or the like, and an accurate fixed point can be surely set on the sample even if the sample varies in size.

According to the analysis method of the third aspect, when the sample is a circular wafer having orientation flats, the provisional inclination as the reference is obtained by obtaining the provisional inclination of the linear portion of the orientation flat and the provisional center coordinates of the circle. Since the system is defined, the fixed point is defined in the temporary coordinate system, and the virtual coordinate system is defined by the fixed point, a fixed virtual coordinate system based on the shape of the wafer can be easily defined.

According to the analysis method of claim 4, since the least squares method is used by selecting many sample points that are constant on the sample, the measurement error can be minimized and the link accuracy is improved. To do.

According to the analysis method of the fifth aspect, it is possible to analyze the minute foreign matter on the semiconductor wafer in the manufacturing process. Therefore, the cause of the defect in the manufacturing process of the semiconductor element can be analyzed.

According to the analysis method of the sixth aspect, even if the sample is a rectangular substrate, a constant virtual coordinate system can be accurately set through the temporary coordinate system based on the outer shape of the substrate.

According to the analysis method of claim 7, since the sample points are defined by specific two sides on the rectangular substrate, if the corners of the rectangular sample are rounded and the fixed points are difficult to determine. However, the virtual coordinate system can be definitely determined.

According to the analyzing method of the eighth aspect, since three or more sample points on each specific side are set and the arithmetic processing is performed by the least square method, the measurement error can be suppressed to a very small value. it can.

According to the analysis method of the ninth aspect, since it is possible to analyze minute foreign matters on the insulating transparent substrate in the manufacturing process of the liquid crystal display element, it is possible to analyze the cause of the defect in the manufacturing process of the liquid crystal display element. You can

According to the method or apparatus of the tenth or fifteenth aspect, the surface shape, elemental analysis, chemical structure, crystal structure and the like of the minute foreign matter can be analyzed and the surface can be processed by selecting an analyzing apparatus. it can.

According to the analyzer of the eleventh aspect, means for defining a virtual coordinate system based on a fixed point of the outer shape of the sample and coordinate conversion means between the virtual coordinate system and the coordinates of the apparatus are provided. The position of the minute foreign matter roughly detected by the particle inspection apparatus provided with these means is accurately linked to the apparatus coordinates of the analyzing apparatus, and the minute foreign matter can be easily set within the visual field of the analyzing apparatus.

According to the analyzer of the twelfth aspect, since the means for determining the temporary coordinate system from an arbitrary point on the outer circumference of the sample and the means for determining the virtual coordinate system based on the temporary coordinate system are provided, the accuracy is improved. A good virtual coordinate system can be obtained, the same position can be specified in both the particle inspection device and the analysis device, and the device coordinates can be completely linked between both devices.

According to the particle inspection apparatus of the thirteenth aspect, since the particle inspection apparatus is also provided with the linking means having the same apparatus coordinates as that of the analyzing apparatus of the present invention, minute foreign matter is detected in the same virtual coordinate system as the analyzing apparatus. It is possible to detect, and it is possible to easily set the minute foreign matter in the visual field of the analyzer.

According to the particle inspection apparatus of the fourteenth aspect, since the means for determining the temporary coordinate system from an arbitrary point on the outer circumference of the sample and the means for determining the virtual coordinate system based on the temporary coordinate system are provided. A highly accurate virtual coordinate system can be obtained,
Fully linked to the device coordinates of the analyzer.

According to the semiconductor element manufacturing method of the sixteenth to seventeenth aspects, it is possible to extract the condition of the minute foreign matter on the wafer surface at any time during the manufacturing process or to perform 100% inspection. It is possible to know the occurrence status and the cause of the occurrence, and to immediately feed back to the manufacturing process. As a result, even in a VLSI having a submicron order wiring, it is possible to minimize defects due to minute foreign matters, improve yield, and improve reliability.

According to the method of manufacturing a liquid crystal display element of claims 18 to 19, the state of minute foreign matter can be grasped during the process of forming thin film transistors, signal wirings, etc., and therefore fine wiring accompanying high definition can be obtained. Even in the liquid crystal display element, it is possible to prevent an accident such as disconnection, and the yield and reliability of the liquid crystal display element can be improved.

[0055]

EXAMPLES Next, a method for analyzing minute foreign substances according to the present invention, an analyzer therefor, and a method for producing a semiconductor element or a liquid crystal display element using these will be described.

In the method for analyzing minute foreign matter according to the present invention, the position of the minute foreign matter on the sample surface is obtained in the particle inspection apparatus, the sample is moved onto the coordinate stage of the analysis apparatus, and the fine foreign matter obtained by the particle inspection apparatus is detected. When the position is obtained by the coordinates of the analysis device, a temporary coordinate system based on the shape of the sample is determined by the device coordinates of the particle inspection device and the analysis device, and on the outer periphery of the sample at a constant distance on the temporary coordinate system. The virtual coordinate system is set based on the sample points. As a result, the virtual coordinate system becomes constant with respect to the sample, the coordinate system is unified between both devices, the error between both devices is small, and the minute foreign matter detected by the particle inspection device can be easily detected within the field of view of the analyzer. It can be set, and the surface shape, elemental analysis, chemical structure, crystal structure, etc. of minute foreign matter can be easily analyzed.

In order to further inspect and analyze the minute foreign matter detected by the particle inspection apparatus adopting the conventional coordinate system by the analyzing apparatus adopting the conventional coordinate system, a sample such as a wafer is transferred to the analyzing apparatus for analysis. As described above, aligning the minute foreign matter detected by the particle inspection apparatus within the visual field of the apparatus is extremely difficult and requires a long time. The inventors of the present invention have conducted diligent studies in order to make it possible to easily align the minute foreign matter detected by the particle inspection device within the visual field of the analysis device, and as a result, a positional deviation occurs between the two devices. It was found that the cause is that the position coordinates of the minute foreign matter on the sample such as the wafer specified by the particle inspection device do not match the position coordinates of the minute foreign substance on the sample specified by the coordinate system of the analyzer. . That is, even if the sample is set in the same manner between the two devices by using a certain point of the sample as a mark and the alignment is performed in the respective device coordinates, the error becomes large and they do not completely match. To match the position coordinates between these two devices,
As a result of further intensive studies by the inventors, even if the cause of the disagreement is to find the center of the sample with reference to the circle on the outer periphery of the sample, the outer periphery of the sample is not a perfect circle, and the center coordinates depend on the sample point to be measured. Find out that is changing,
The inventors have completed the present invention by finding that a coordinate error between both devices can be made extremely small by linking with a virtual coordinate system obtained by using a common point (constant point) on a sample as a reference.

When the virtual coordinate system is determined with reference to a fixed point on the outer circumference of the sample, for example, in the case of a circular plate-like sample having an orientation flat portion such as a semiconductor wafer, at least two points are provided in the orientation flat portion and three points are provided in the circular portion. Need sample points,
It is difficult to set sample points in a certain place. Therefore, in the present invention, a temporary coordinate system is defined by an arbitrary temporary sample point, a point at a certain distance is defined as a sample point in the temporary coordinate system, and the virtual coordinate system (the center of the circle does not necessarily become the origin is defined as the origin by the sample point. However, the origin is always a fixed point based on a fixed point), so that the virtual coordinate system is a fixed coordinate system based on the fixed point of the sample The coordinate error of can be almost eliminated. In other words, in the temporary coordinate system, for example, the circular part may not be a perfect circle, or the outer peripheral part may be distorted, so that the origin may be a point that is not the true center. Since the outer shape is almost a perfect circle and the outer circumference is also polished, the distortion is small and the deviation from the true center is about ± 30 μm or less. Since the sample point is set at a point distance based on that point, the error of the sample point is ± 3
Even if the center coordinate obtained from 0 μm or less is not the center of the true circle, the sample point is set as a fixed point, so there is almost no effect on the coordinate system based on the error of the sample point, and the sample as a fixed point The virtual coordinate system having the center coordinates as the origin and the tilt as the x-axis or the y-axis is constant even in different analyzers by obtaining the center coordinates of the circle and the inclination of the orientation flat by using the points. The reason is that since the deviation of the center coordinates from the true center is the same between the different devices, there is almost no deviation of the center coordinates of the respective devices from the relative position.

[Embodiment 1] As described above, in order to link the device coordinates of the particle inspection device and the analysis device which is not the particle inspection device with high accuracy, the device coordinates adopted by the respective devices are fixed on the outer shape of the sample. It is best to define in a virtual coordinate system based on points. This is because if the sample points, which are the measurement points on the wafer that is the sample for determining the coordinate axis in each device, are different, the reference point on the outer circumference of the wafer, which is not a perfect circle on a microscopic scale, changes and the origin of the coordinate axis becomes perfect. Does not match. In addition, since the orientation flat does not have a completely flat surface, the tilt shifts when the sample points are different. Therefore, there is a high possibility that an error will occur when coordinate conversion is performed between the two devices.

First, a coordinate system that is effective for efficiently linking different device coordinates is selected. It should be noted that, for a wafer that originally has a different size or shape, without considering the wafer shape, for any position on the wafer,
It is extremely difficult to uniquely define the position coordinates by applying only the device coordinates. Therefore, by taking into consideration the shape of the wafer to be evaluated, the coordinate system is determined with reference to the points on each wafer, and the coordinate system is determined by the individual device coordinates of each device. Absolutely define arbitrary position coordinates. That is, a virtual coordinate system considering a fixed point of each wafer is set, and arbitrary position coordinates on each wafer are defined in each device. Next, the specific method will be described with reference to the flowchart of FIG.

In order to accurately link the device coordinates of the particle inspection device and the analysis device other than the particle inspection device to the wafers having different sizes and orientation flat lengths,
Define and set a virtual coordinate system that satisfies the following conditions.

(1) The virtual coordinate system defined on the wafer does not depend on the size of the wafer or the orientation flat length.

(2) The virtual coordinate system defined on the wafer is not affected by the setting state of the wafer.

As a virtual coordinate system Fa satisfying the above conditions, it has been clarified as a result of the research that it is effective to use the orientation flat direction of the wafer as the x-axis and the center defined by the outer periphery of the wafer as the origin S. It was

By defining a virtual coordinate system Fa with a certain point on the outer shape of the wafer as a reference, with the x axis being the orientation flat direction of the wafer and the origin S being the center defined from the outer periphery of the wafer The results of an examination of the error factors that occur when performing are summarized.

The following are examples of error factors that occur when the coordinates of each device are linked.

Due to the subtle distortion of the wafer outer peripheral shape as shown in FIG. 4 (orientation flat distortion errors e _o , e _ok , outer peripheral distortion errors e _c , e _ck ) Since the sample points are slightly deviated, a distortion error e occurs. The outer peripheral portion of the wafer has a polishing surface edge (inner line in FIG. 4A) and a wafer edge as seen in FIG.

By examining the nature of the distortion error,
The results of research on a method for minimizing the effect of distortion error are shown.

The outer peripheral portion of the wafer has a polishing surface edge and a wafer edge as shown in FIG. The distortions e _o , e _ok , e _c , and e _ck depending on the delicate shape of these outer peripheral portions become error factors that occur when the device coordinates are linked.

On the other hand, the magnitude of the strain is considered to depend on the wafer manufacturing conditions, and it is considered that there is a difference between the polished surface edge (e _ok , e _ck ) and the wafer edge (e _o , e _c ). Therefore, it is considered appropriate to select the less measured portion by measuring and examining each strain. On the other hand, in general, a particle inspection apparatus optically observes the wafer edge, and it has been extremely difficult to position the sample point at the edge of the polishing surface.
Therefore, it has become clear from the results of the study conducted by the present inventors that the position of the sample point needs to be set at the wafer edge even in an analyzer that is not a particle inspection apparatus, and at this time, the coordinate link accuracy is most improved. .

As a result of repeating the SEM observation of the outer peripheral portion of the wafer, the change in strain was not so rapid in the orientation flat portion and the outer peripheral portion. From this examination result, it was found that the distortion amount at a relatively close position can be ignored. Therefore, the position of the sample point on the outer peripheral portion of the wafer used for the link of the device coordinates, the analysis device, which is not a particle inspection device,
It has been found that the error can be minimized by setting the particle inspection apparatuses at substantially the same position. For this purpose, we think that it is necessary to define a reference point that is a unique reference on each wafer for each wafer, and to define the sample point based on this reference point. The methods were examined, and as a result, they were found to be effective (see FIG. 5, the deformation of the outer circumference and the inclination of the temporary coordinate system are exaggerated in FIG. 5).

(A) First, the outer shape of the wafer n is measured,
As shown in FIG. 2, arbitrary different temporary sample points 3 (CP _t1n , CP _t2n , CP _t3n ) on the outer peripheral portion and arbitrary different temporary sample points 2 (OP
_t1n , OP _t2n ) is determined (see S1 in FIG. 1), and the rough center S of the temporary wafer is determined from these temporary sample points.
_t (c _tn , d _tn ) and the equation of the axis including the orientation flat (y
_t = a _tn · x _t + b _tn ) is obtained (see S2 and FIG. 2 in FIG. 1). The temporary wafer center S _t and the true center S _r obtained at this time are considerably deformed even if the outer shape of the wafer is deformed. Is relatively close (see FIG. 5).

(B) Next, the central point S uniquely defined
_{By using t} as a reference point, the positions of the respective sample points are commonly set between the two devices, and the wafer n is used as a reference.
New sample points (CP _1d , CP _2d , C
P _3d , OP _1d , OP _2d ) are measured and defined (S3,
FIG. 5 (b)), by fitting to the equations of circles and straight lines, the common wafer center (c _n ,
d _n ) and the inclination a _{n of the} orientation flat can be uniquely defined with good reproducibility. At this time, as shown in FIG. 5B, three points, for example, points on the circumference, which intersect a straight line forming a constant angle with respect to the temporary center point and the circular portion on the outer circumference of the wafer, are −3 from the x-axis.
By choosing three points 0 °, 90 °, 210 °, and by choosing OP _1d and OP _2d at a constant distance from the intersection OP _c of the orientation flat and the y axis, the constant point is always taken as the sample point. can do.

(C) Based on this result, in each device, the circular center coordinates and sample points (OP1d, OP2) are determined by the sample points (CP1d, CP2d, CP3d).
obtains the inclination of the orientation flat with d), determining respective axis with the same direction as the inclination a _n origin S and the origin S and passes through the orientation flat x axis (or y axis), the virtual coordinate system Fa
Can be defined (see S4). In FIG. 5 (a),
3 different arbitrary temporary sample points (C
P _t1n , CP _t2n , CP _t3n ) and two arbitrary different sample points (OP _t1n , O) on the orientation flat portion.
P _t2n ) and the defined new sample points (CP _1n ,
The positional relationship among CP _2n , CP _3n , OP _1n , and OP _2n ) is shown. The correlation function between the virtual coordinate system and the device coordinate is obtained and linked to each other (see S5 in FIG. 1).

Thus, as shown in FIG. 3, the virtual coordinate system Fa (x
_{a, y a)} is determined.

This series of operations is processed by the computer provided in the analyzer. Further, in the above-described embodiment, the center of the circle is the origin and the orientation flat direction is the x-axis direction.
The origin can be set at another place, or the orientation flat direction can be set in the y-axis direction or another direction without setting the x-axis direction. The point is that the virtual coordinate system is set with reference to a fixed point on the sample.

In order to further improve the accuracy, it was effective to define a large number of sample points. Further, as an approximation method for reducing the error, application of the least square method to these sample points was effective. Therefore, the least squares method was applied to the calculation of the slope a and the center (c, d). That is, any different 3 on the orientation flat part
The slope of the orientation flat is calculated by finding the equation of a straight line passing through more than four sample points using the least squares method, and the equation of a circle or elliptic equation passing through four new sample points of arbitrary different points on the outer circumference. Is a method of calculating the center S of the wafer by obtaining the value using the method of least squares.

Further, in the above-mentioned embodiment, an example of a silicon wafer for a semiconductor element has been explained. However, if there is no rectangular arc portion such as an insulating transparent substrate for a liquid crystal display element, one side of the rectangle Is determined and its inclination is determined, and the coordinates of the intersections of the vertical bisectors are used as the reference by detecting the coordinates of both ends of the other two sides, and based on the specific shape of the sample as described above. Coordinate conversion between the two devices can be performed through the coordinate system.

When the sample point is a square sample, it can always be a fixed point by selecting the corner point as the sample point. However, if the corner points are rounded, the inclination of that side is calculated with reference to an arbitrary fixed point on the side.
It can be an axis or a y-axis.

When the inclination of the side is obtained from the sample points on the side, the measurement accuracy is further improved by determining three or more sample points and averaging by the least squares method as in the above-mentioned orientation flat portion. improves.

[Embodiment 2] FIG. 6 is an explanatory view showing the basic structure of a metal microscope with an actuator which is an example of a metal microscope with a coordinate link function used in an embodiment of the method for observing minute foreign matter according to the present invention. The device configuration is the same as the basic configuration of a conventional metal microscope with an actuator.

First, the virtual coordinate system Fa was defined on the wafer according to the procedure shown in Example 1 for the particle inspection apparatus manufactured by Tencor, the apparatus name (Surfscan 6200) and the metal microscope with an actuator. The device coordinates were linked between the two devices, and the amount of deviation that occurred was investigated using multiple wafers with a grid-like pattern engraved. In the xy coordinate display, the origin position or center position and It was found that the deviation amount was approximately (± 80 μm, ± 80 μm) with respect to any definable point, and it was found that there was a considerable improvement effect.

Therefore, an attempt was made to observe minute foreign matters of 0.2 μm level existing on a silicon wafer used in the manufacture of semiconductor elements. As a result, even when the magnification of the metallurgical microscope is 400 (the magnification of the eyepiece is fixed to 20 times and the objective lens is fixed to 20 times), the fine foreign matter can be kept within the visual field range, and the fine foreign matter of the level of 0.2 μm which could not be achieved in the past can be obtained. Certainly microscopic observation was possible (observed as dark dots).

[Embodiment 3] In this embodiment, as an analyzer, instead of the metallurgical microscope 3 of Embodiment 2, for example,
Device name RCM8000 sold by Nikon Corporation
The above-mentioned means for setting a coordinate system common to the conventional scanning laser microscopes such as those described above is used. Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the means and method for coordinate linking are also exactly the same as in the second embodiment.

Therefore, an attempt was made to observe fine foreign matters of 0.2 μm level existing on a silicon wafer used in the manufacture of semiconductor elements. As a result of observing each foreign matter 7 using UV light for the measurement, it is possible to observe the surface of the foreign matter 7 with respect to the fine foreign matter of 0.2 μm diameter level or more, and the dark point for the fine foreign matter 7 of 0.2 μm or less. I was able to find

The present example is characterized in that it is non-destructive and that the surface can be observed in the atmosphere. For example, when it is used in the manufacturing process of a semiconductor element or a liquid crystal display element, it can be used for foreign matter analysis in the steps after the film forming step. Especially effective.

[Embodiment 4] In this embodiment, instead of the metallurgical microscope 3 of Embodiment 2, as an analysis device, for example, a device name sold by JEOL Ltd., a microscopic infrared unit IR-MAU110 is installed. It uses the conventional microscopic FTIR found in JIR-5500 and the like, and is the same in that the above-mentioned means for setting a common coordinate system is provided (this device is equipped with a metallurgical microscope). It is installed). Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the method of coordinate link is also exactly the same as in the fourth embodiment.

Therefore, an attempt was made to observe fine foreign particles of 0.2 μm or more existing on a silicon wafer used in the manufacture of semiconductor elements. As a result, according to this example, an IR spectrum with a high S / N could not be obtained from a foreign substance of 3 μm or less. However, it was found that some of the foreign matters 7 of 3 μm or more gave IR spectra peculiar to organic substances, and the cause of the foreign matters depended on the resist removal defect. It is effective to use this analysis in the manufacturing process of the semiconductor device or the liquid crystal display device, especially in the steps after the resist coating step.

[Embodiment 5] In this embodiment, as an analyzer, instead of the metallographic microscope 3 of Embodiment 2, for example,
Equipment name, NR-18, sold by JASCO Corporation
It uses the conventional micro Raman seen in 00 etc.,
It is the same as the above-mentioned means for setting the virtual coordinate system, etc. (note that this apparatus is equipped with a metallurgical microscope). Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the coordinate linking method is also exactly the same as in the second embodiment.

Therefore, an attempt was made to observe foreign matter having a size of 0.2 μm or more existing on a silicon wafer used for manufacturing a semiconductor element. As a result, according to this example, a Raman spectrum having a high S / N was not obtained from a foreign matter having a size of 1 μm or less. However, it was found that Raman spectra peculiar to inorganic substances were obtained from some of the foreign substances 7 of 1 μm or more, and the cause of the generation of the foreign substances was related to the film forming process. It is effective to use this analysis in the manufacturing process of the semiconductor device or the liquid crystal display device, particularly in the steps related to film formation, etching, cleaning and the like.

[Embodiment 6] In this embodiment, instead of the metallurgical microscope 3 of Embodiment 4, as an analyzer, for example,
This is the same as the device name sold by JASCO Corporation, the conventional PL found in the 25C type, etc., and the same means as described above for setting the virtual coordinate system. (Note that this device is equipped with a metallurgical microscope). Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the method of coordinate linking is exactly the same as that of the second embodiment, and it is possible to set a minute foreign substance up to 0.2 μm.

Therefore, an attempt was made to observe fine foreign particles of 0.2 μm or more existing on a silicon wafer used in the manufacture of semiconductor elements. As a result, according to this example, a fluorescence spectrum with a high S / N could not be obtained from a foreign substance of 3 μm or less. However, among the foreign substances 7 having a size of 3 μm or more, some foreign substances gave fluorescence spectra peculiar to inorganic substances and crystallinity, and it was found that the cause of generation of the foreign substances is related to film formation, etching, and heat treatment. It is effective to use this analysis in the manufacturing process of the semiconductor device or the liquid crystal display device, particularly in the processes related to film formation, etching and heat treatment.

[Embodiment 7] In this embodiment, as an analyzer, instead of the metallurgical microscope 3 of Embodiment 2, for example,
Equipment name F-20 sold by Hitachi, Ltd.
It is the same as the one using the conventional spectrofluorometer as shown in 00, etc., and the same means as described above for setting the virtual coordinate system are provided (this device is equipped with a metallurgical microscope). Has been). Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the method of coordinate link is also exactly the same as in the fourth embodiment.

Therefore, an attempt was made to observe fine foreign particles of 0.2 μm or more existing on a silicon wafer used in the manufacture of semiconductor elements. As a result, according to this example, a fluorescence spectrum could not be obtained with a foreign substance of 2 μm or less, but 2 μm
Fluorescence spectra with high S / N were not obtained from some of the above foreign substances. However, of the foreign matter 7 of 2 μm or more,
It was found that the fluorescence spectra peculiar to some inorganic substances were obtained, and the cause of the generation of the foreign matter was related to film formation, etching, and cleaning. It is effective to use this analysis in the manufacturing process of the semiconductor device or the liquid crystal display device, particularly in the steps related to film formation, etching, cleaning and the like.

[Embodiment 8] FIG. 7 is an explanatory view showing the basic constitution of another embodiment of the method for analyzing minute foreign matter according to the present invention. The difference between the present embodiment and the fourth embodiment is that, instead of the metallographic microscope 3 used in FIG. 6, for example, a device name S-7000 such as a measuring SEM sold by Hitachi, Ltd. is used. , The same as the above-mentioned means for setting the virtual coordinate system (the x used
-Y stage is different from Example 2).

In the present embodiment, as shown in FIG. 7, the analyzing apparatus is an electron gun unit 43 equipped with an electron gun for applying a scanning electron beam 50 to the silicon wafer 2 and an electron lens, and 2 generated from the silicon wafer 2. A secondary electron detector 44 for converting the secondary electrons into an electric signal, and the signal obtained by the secondary electron detector 44 is sent to an amplification / control unit 45 for amplifying and controlling the electric signal. And is displayed by the CRT 46 which outputs a secondary electron image. Reference numeral 41 denotes a chamber for keeping them vacuum, which is evacuated through the exhaust port 42 and kept in vacuum. Using this length-measuring SEM, the minute foreign matter 7 existing on the silicon wafer 2 can be inspected by the same procedure as in the fourth embodiment. That is, Example 1
The virtual coordinate system Fa is defined on the wafer stage on the stage of the measuring SEM according to the procedure shown in FIG.

As in the second embodiment, the amount of deviation caused by the coordinate link was investigated using a plurality of wafers having a grid-like pattern engraved. As a result, in the xy coordinate display, the origin position or center position and It was found that the deviation amount was approximately (± 35 μm, ± 35 μm) with respect to an arbitrary point that can be defined, and it was found that there was a considerable improvement effect.

Therefore, an attempt was made to observe minute foreign matters of 0.1 μm level existing on a silicon wafer used in the manufacture of semiconductor elements. According to this example, the foreign matter could be easily found in the field of view of the SEM (magnification: 3000 times) with respect to the minute foreign matter 7, and a clear SEM image could be obtained.
There were various fine foreign matters 7 such as protruding ones or dented ones, and their shapes could be grasped. The analysis in this example is particularly performed in the manufacturing process of a semiconductor device or a liquid crystal display device, including film formation, etching, cleaning,
It is effective for all processes such as exposure, ion implantation, diffusion, and heat treatment.

[Embodiment 9] FIG. 8 is an explanatory view showing the basic structure of another embodiment of the method for analyzing minute foreign matter according to the present invention. In this embodiment, an X-ray detector 47, an amplification / control unit 48 for amplifying / controlling an electric signal provided by the X-ray detector 47, are used in addition to those using the SEM of the eighth embodiment.
A CRT 49 for displaying X-ray output is added. The EPMA is formed by this, but the configurations of the other parts are all the same as those of the eighth embodiment, and the method of coordinate linking such as the provision of means for setting the virtual coordinate system on the wafer is the same as that of the eighth embodiment. Exactly the same. Using this example, the same silicon wafer 2 as in Example 8 was used.
As a result of inspecting the minute foreign matter 7 existing on the surface of the, it was possible to perform elemental analysis on the protruding minute foreign matter 7. The minute foreign matter 7 is W, Cu, Fe, C, S, O, C
It was found to be a compound of 1 and the like. But 0.3
For the minute foreign matter 7 having a size of μm or less, a considerable detection time was required to perform a detailed elemental analysis.

The analysis in this embodiment is particularly effective in all steps such as film formation, etching, cleaning, exposure, ion implantation, diffusion, and heat treatment in the manufacturing process of semiconductor devices or liquid crystal display devices.

[Embodiment 10] In this embodiment, as the analyzer, AES is used in place of the EPMA of Embodiment 9, and other configurations are exactly the same as those shown in FIG.
The means for setting the virtual coordinate system and the operating method thereof are the same as in the eighth embodiment. As AES, for example, PHI-670 manufactured by Perkin Elmer Co. can be used. As a result, the minute foreign matter 7 existing on the surface of the silicon wafer 2 was analyzed in the same manner as in each of the above-described examples, and as a result, the elemental analysis could be performed on the protruding minute foreign matter 7. The composition of the minute foreign matter 7 is W, Cu, Fe, C,
It was possible to distinguish the compounds of S, O, and Cl, to identify the dust source and take countermeasures against it. The analysis according to the present embodiment is particularly effective for all steps such as film formation, etching, cleaning, exposure, ion implantation, diffusion, and heat treatment in the manufacturing process of semiconductor devices or liquid crystal display devices.

[Embodiment 11] In this embodiment, EELS is used as the analyzer in place of the EPMA of Embodiment 9, and other configurations are exactly the same as those shown in FIG. The means for setting and the operating method thereof are the same as in the eighth embodiment. As EELS, for example, PHI-660 manufactured by Perkin Elmer Co., Ltd. can be used. As a result, the minute foreign matter 7 existing on the surface of the silicon wafer 2 was inspected in the same manner as in each of the above-described examples. As a result, the protruding minute foreign matter 7 can be analyzed by a compound, and the chemical bond state of the minute foreign matter 7 can be determined. It became clear that we could identify the dust source and take countermeasures against it. The analysis according to this embodiment is particularly effective for each process of film formation, etching, and exposure in the manufacturing process of semiconductor devices or liquid crystal display devices.

[Embodiment 12] FIG. 9 is an explanatory view showing the basic constitution of the RHEED of another embodiment of the method for analyzing minute foreign matter of the present invention. In this embodiment, the electron gun unit 43 used in Embodiment 8 is used as the secondary electron detector 4 for the silicon wafer 2.
By tilting the same angle as that of No. 4 so that the electron beam 50 hits the surface of the silicon wafer 2 even if the surface of the silicon wafer 2 is hit, and the surface of the silicon wafer 2 is rotated instead of the secondary electron detector 44. It is different from the eighth embodiment in that a CCD camera 57 for obtaining a diffraction spot by the electron beam thus deposited is attached, and the other points are the same.

As a result of inspecting the fine foreign matter 7 existing on the surface of the silicon wafer 2 in the same manner as in each of the embodiments,
Diffraction spots could be obtained for some of the minute foreign substances 7, and it was found that these were crystalline substances, and when they were crystalline substances such as whiskers, it was possible to suppress them. The analysis according to the present embodiment is effective for suppressing abnormal growth of crystals and selecting the conditions thereof when used in the manufacturing process of a semiconductor device or a liquid crystal display device, particularly after film formation and heat treatment.

[Embodiment 13] In this embodiment, as an analyzer, SIMS, that is, the electron gun unit 43 of Embodiment 8 is used instead of the EPMA of Embodiment 9 as an ion gun and a condenser.
An ion gun unit provided with a lens is used to irradiate the surface of the silicon wafer 2 with a scanning ion beam instead of the electron gun 50, and the secondary ions generated on the surface of the silicon wafer 2 instead of the secondary electron detector 44. In order to separate and detect, a mass spectrometric unit using a double-convergence type mass spectrometer or a quadrupole mass spectrometer is used, and other configurations are exactly the same as those shown in FIG. The setting means of the virtual coordinate system and the operating method thereof are the same as in the ninth embodiment.

As SIMS, for example, CAMECA
The IMS-5F etc. made from can be used.

As a result of inspecting the minute foreign matter 7 existing on the surface of the silicon wafer 2 in the same manner as in each of the embodiments,
It has been found that the composition analysis can be performed on the protruding minute foreign matter 7, the cause of the generation of the minute foreign matter is clarified, and the yield is reduced due to the deterioration of the electrical characteristics due to the diffusion of the metal from the foreign matter. It is effective to use this analysis in each process of film formation, etching, cleaning, and heat treatment in the manufacturing process of semiconductor devices or liquid crystal display devices.

[Embodiment 14] This embodiment is the same as Embodiment 13 above.
TOF-SIMS is used instead of SIMS, and a mass analysis unit using a time-of-flight mass spectrometer is used instead of a mass spectrometer unit such as a double-focusing mass spectrometer or a quadrupole mass spectrometer. Other configurations are exactly the same as those shown in FIG. 6, and the virtual coordinate system setting means and method are the same as in the ninth embodiment.

According to this example, the chemical structure of the foreign substance can be analyzed by analyzing the fragments from each foreign substance, but unlike Example 15, the high molecular weight substance existing on the outermost surface of the foreign substance. The effect is that analysis can be performed. Therefore, it is particularly effective for analyzing foreign substances including organic substances.

[Embodiment 15] This embodiment is the same as Embodiment 13 described above.
PIXE is used instead of SIMS, and the configuration of the thirteenth embodiment further includes an X-ray detector, an amplification / control unit for amplifying / controlling an electric signal provided by the X-ray detector, and an X-ray. A CRT that outputs an image is added to the P
It constitutes an IXE device.

According to this embodiment, the composition of each foreign substance can be analyzed, but it is particularly suitable for highly sensitive and highly accurate elemental analysis. Therefore, it is particularly effective for analyzing foreign particles that are ultrafine particles of 0.1 μm or less.

[Embodiment 16] In this embodiment, an FIB, that is, the electron gun unit 43 of Embodiment 8 is used as an analyzer in place of the X-ray detector of Embodiment 8 as an ion gun and a condenser.
The FIB is an ion gun unit equipped with a lens, and is capable of removing unnecessary foreign matter by irradiating the surface of the silicon wafer 2 with a scanning ion beam instead of the electron gun 50. The rest of the configuration is exactly the same as that shown in FIG. 7, and the setting means of the virtual coordinate system and its method are the same as in the eighth embodiment.

According to this embodiment, it is possible to observe minute foreign matters, remove unnecessary foreign matters, and immediately repair them. Therefore, it is particularly effective in improving the yield by repairing defects due to foreign matter.

[Embodiment 17] In this embodiment, XPS using soft X-rays such as AlKα and MgKα is used in place of the electron gun unit 43 of Embodiment 9, and other configurations are shown in FIG.
This is exactly the same as that shown by, and the virtual coordinate system setting means and the like are the same as in the ninth embodiment.

According to this embodiment, it is possible to chemically bond the protruding minute foreign matter 7, and in this embodiment, since the soft X-ray beam is used in particular, there is an effect that the damage to the sample is particularly small. . Therefore, it is particularly effective for analyzing a depth of several tens of liters from the outermost surface of a foreign substance without destroying it.

[Embodiment 18] In this embodiment, a UPS using an ultraviolet beam for converting ultraviolet rays generated from a high pressure mercury lamp into a beam is used instead of the electron gun unit 43 of the ninth embodiment. It is exactly the same as that shown by 8, and the setting means of the virtual coordinate system and the method thereof are the same as in the ninth embodiment.

Also in this embodiment, the composition analysis can be performed on the protruding minute foreign matter 7. In this embodiment, since the ultraviolet beam is used in particular, there is an effect that the damage to the sample is particularly small. Therefore, it is particularly effective for analyzing the composition from the outermost surface of a foreign substance to a depth of several tens of liters without breaking.

[Embodiment 19] In this embodiment, as an analyzer, instead of the metal microscope 3 of Embodiment 2, for example, probe microscope SPA350 manufactured by Seiko Instruments Inc. is used.
(AFM probe was used as a probe). Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the virtual coordinate system setting means and method are also the same as those in the second embodiment. This embodiment is characterized in that the surface can be observed in the atmosphere.

Therefore, an attempt was made to observe foreign matter of a level of 0.1 μm existing on a silicon wafer used for manufacturing a semiconductor device. According to the present embodiment, it is possible to easily find the foreign matter in the scanning range of the AFM (scanning range 80 μm) with respect to the minute foreign matter 7, and obtain a clear AFM image. There were various fine foreign matters 7 such as protruding ones or dented ones, and their shapes could be grasped. The analysis in this embodiment is particularly effective in all processes such as film formation, etching, cleaning, exposure, ion implantation, diffusion, and heat treatment in the manufacturing process of semiconductor devices or liquid crystal display devices.

[Embodiment 20] In this embodiment, as an analyzer, instead of the metal microscope 3 of Embodiment 2, for example, probe microscope SPA350 manufactured by Seiko Instruments Inc.
(Using an STM probe as a probe). Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the virtual coordinate system setting means and method are also the same as those in the second embodiment. This embodiment is characterized in that the surface can be observed in the atmosphere.

Therefore, an attempt was made to observe foreign matters of 0.1 μm level existing on a silicon wafer used in the manufacture of semiconductor devices. According to the present embodiment, the S
A foreign substance could be found within the TM scanning range (scanning range 80 μm), and a clear STM image could be obtained. There are various fine foreign matters 7 such as protruding ones and concave ones, and the shape thereof can be grasped. The analysis in the present embodiment is particularly performed in the manufacturing process of the semiconductor element or the liquid crystal display element, especially film formation, etching, It is effective for all processes such as cleaning, exposure, ion implantation, diffusion, and heat treatment.

[Embodiment 21] In this embodiment, as an analyzer, instead of the metal microscope 3 of Embodiment 2, for example, probe microscope SPA350 manufactured by Seiko Denshi Kogyo Co., Ltd.
(Using an MFM probe as a probe). Therefore, the other configuration is exactly the same as the configuration shown in FIG. 6, and the virtual coordinate system setting means and method are also the same as those in the second embodiment. This embodiment is characterized in that the surface can be observed in the atmosphere.

Therefore, an attempt was made to observe foreign matter of a level of 0.1 μm existing on a silicon wafer used for manufacturing a semiconductor device. According to the present embodiment, it is possible to easily find the foreign matter with respect to the minute foreign matter 7 within the MFM scanning range (scan range 80 μm), obtain a clear MFM image, and find the cause of the foreign matter generation. The analysis in this embodiment is particularly effective for the steps of film formation and ion implantation in the manufacturing process of semiconductor devices or liquid crystal display devices.

[Comparative Example 1] Particle inspection device manufactured by Tencor, device name; Surfscan 6200 and measuring SEM manufactured by Hitachi, Ltd., measuring SEM, device name: S-700
When 0 is used, the device coordinates are directly linked between the two devices, and the amount of deviation generated is investigated using a plurality of prototype wafers.
It has been found that there is a deviation amount of approximately (± 150 μm, ± 150 μm) with respect to the origin position or the center position and any point that can be defined therein.

[0125]

As described above, according to the analysis method of the present embodiment, the device coordinates of the particle inspection device and the device coordinates of the analysis device are surrounded by a temporary coordinate system based on the outer shape of the sample. Since a sample point is defined at a fixed position above and a virtual coordinate system is defined by the sample point and linked, the deviation that occurs when linking the device coordinates of the conventional particle inspection device and the device coordinates of the analyzer is drastically reduced. Can be made. As a result, the location of the minute foreign matter detected by the particle inspection device can be easily and reliably set within the visual field of the analysis device by operating the device coordinates of both devices.

Therefore, even in the case of a sample having a wide area, it is possible to detect even minute foreign matter which has been difficult in the past by increasing the magnification, and the minute foreign matter can be set within the visual field of the analyzer. Therefore, it is possible to easily detect minute foreign substances, and it is possible to selectively perform surface observation and composition analysis only in the range where minute foreign substances are present, which greatly shortens the measurement time and ensures early sample quality. An evaluation can be done.

According to the analyzer of the present invention, the means for setting the temporary coordinate system based on the outer peripheral shape of the sample, the sample point is set at a fixed position on the outer periphery of the sample by the temporary coordinate system, and the sample point is used. Since the means for setting the virtual coordinate system and the means for obtaining the correlation function between the virtual coordinate system and the apparatus coordinates are provided, the apparatus coordinates of the particle inspection apparatus and the analyzer based on the same fixed virtual coordinate system. Are linked to each other. As a result, the minute foreign matter detected by the particle inspection device can be reliably set within the visual field of the analysis device in a short time by the device coordinates of the analysis device.

Further, since each of the above-mentioned various analyzers is provided with means for setting the coordinate system based on the shape of the sample, the minute foreign matter detected by the particle inspection device can be easily set within the visual field of the analyzer. You can
An analyzer suitable for the purpose can be used, and it is possible to analyze the surface shape, elemental analysis, chemical structure, crystal structure, and the like of the minute foreign matter, and also to perform surface processing.

Further, by applying the analysis method and the analysis apparatus of the present invention to the manufacturing process of semiconductor elements and the manufacturing process of liquid crystal display elements, it is possible to prevent the influence of foreign matter on a fine pattern, and to improve yield and reliability. It is possible to obtain a semiconductor device or a liquid crystal display device with improved characteristics.

[Brief description of drawings]

FIG. 1 is a flowchart for setting a virtual coordinate system based on the shape of a sample and obtaining a correlation function between device coordinates by the analysis method and the analysis device of the present invention.

FIG. 2 is an explanatory diagram for setting a temporary coordinate system.

FIG. 3 is an explanatory diagram for setting a virtual coordinate system.

FIG. 4 is an exaggerated view of a deformed state of a peripheral portion of a wafer.

FIG. 5 is a diagram illustrating a relationship between a temporary sample point that sets a temporary coordinate system and a sample point that sets a virtual coordinate system.

FIG. 6 is a diagram showing a configuration in which a metallurgical microscope is used as an analyzing device in an embodiment of the analyzing method and the analyzing device of the present invention.

FIG. 7 is a diagram showing a configuration in which a length-measuring SEM is used as an analysis device in an embodiment of the analysis method and the analysis device of the present invention.

FIG. 8 is a diagram showing a configuration in which an EPMA is used as an analysis device in an embodiment of the analysis method and the analysis device of the present invention.

FIG. 9 is a diagram showing a configuration in which RHEED is used as an analyzing device in an embodiment of the analyzing method and the analyzing device of the present invention.

FIG. 10 shows an example of a result obtained by measuring foreign matters on a silicon wafer with a particle inspection apparatus.

FIG. 11 is a diagram showing a definition example of device coordinates adopted by a conventional particle inspection device and analysis device.

[Explanation of symbols]

1 stage, 2 wafers (sample), 3 metallographic microscope,
7 Small foreign matter.

Claims (19)

[Claims] 1. A particle inspecting apparatus determines the position of a minute foreign substance on the surface of a sample, transfers the sample onto a coordinate stage of an analyzer, and inputs the position of the minute foreign substance determined by the particle inspecting apparatus into the coordinates of the analyzer. And a method for analyzing the content of the minute foreign matter, wherein the apparatus coordinates adopted by the particle inspection apparatus and the apparatus coordinates adopted by the analyzer are virtual based on a fixed point on the outer circumference of the sample. A method for analyzing minute foreign matter, characterized by linking using a coordinate system. 2. A temporary coordinate system is defined by an arbitrary temporary sample point on the outer circumference, and a fixed point on the outer circumference of the sample is defined by setting a point on the outer circumference on the temporary coordinate system as a sample point. 1. The analysis method according to 1. 3. The sample is a circular wafer having an orientation flat, and at least three points of the circular portion of the wafer and at least 2 of the orientation flat portion are used by using respective device coordinates of the particle inspection device and the analysis device. The point is measured as a temporary sample point, the temporary center coordinate of the circle of the sample and the temporary tilt of the orientation flat are obtained from the coordinates of the measured temporary sample point, and the direction of the temporary tilt is defined as the x-axis or the y-axis. The xy coordinate system having the center coordinates of the origin as the origin is defined as a temporary coordinate system, and at least three points in the circular portion and at least two points in the orientation flat portion are defined as sample points at fixed points in the temporary coordinate system, and the sample is determined. From the coordinates of the points, the center coordinates of the circle of the sample and the orientation The inclination of the station flat,
3. The analysis method according to claim 1, wherein an xy coordinate system having the center of the circle as an origin is defined as a virtual coordinate system with the direction of the inclination as the x axis or the y axis. 4. The sample points are 4 points or more in a circular portion,
4. The center coordinates of the circle and the inclination of the orientation flat are determined by the least square method from the measurement coordinates selected from three or more points in the orientation flat portion.
Analytical method described. 5. The analysis method according to claim 3, wherein the wafer is a semiconductor element in the middle of a manufacturing process or a semiconductor wafer on which the element is being formed. 6. The sample is a prismatic substrate, and the corners of the prismatic substrate are measured as sample points by using the respective device coordinates of the particle inspection device and the analyzer, and the two specific sides of the prism are measured. A central coordinate obtained by the intersection of the vertical bisectors and a temporary inclination obtained by arbitrary two points on one specific side are obtained, a temporary coordinate system is defined by the temporary inclination and the central coordinate, and the specific point in the temporary coordinate system is determined. 3. The analysis method according to claim 1, wherein the inclination of the specific side is obtained from sample points that are fixed points on one side, and a virtual coordinate system is determined by the inclination and the center coordinates. 7. The sample is a rectangular substrate, and using the respective device coordinates of the particle inspection device and the analysis device, two arbitrary points other than corners on specific two sides of the rectangular substrate are tentative samples. Measured as points, the provisional inclinations of the specific two sides are obtained from the respective two points, and the straight lines in contact with the directions of the provisional inclinations are defined as provisional x-axis and provisional y-axis, respectively. A system is defined, at least two sample points at fixed points in the temporary coordinate system are defined on each of the specific two sides, and the slopes of the two sides are calculated from the positions of the sample points. The analysis method according to claim 1 or 2, wherein a virtual coordinate system is defined with a straight line in contact with the direction as the x-axis and the y-axis, respectively. 8. The analysis method according to claim 6, wherein three or more sample points on each of the specific sides are defined, and the slope of the specific side is obtained from the measurement coordinates of the three or more points by the least squares method. 9. The analysis method according to claim 6, wherein the prismatic substrate is a liquid crystal display element in the middle of a manufacturing process or an insulating transparent substrate on which the element is being formed. 10. The analysis device comprises a metallographic microscope, a scanning electron microscope, a scanning laser microscope, a microscopic infrared spectroscopic device for analyzing chemical structures, a microscopic Raman spectroscopic device, a photoluminescence device for performing fluorescence spectroscopic analysis, and a surface trace amount. Electron probe microanalysis device for elemental analysis, Auger electron spectrometer, electron energy loss spectrometer, secondary ion mass spectrometer, time-of-flight mass spectrometer, particle beam excited X-ray spectrometer, high-speed reflection for crystal analysis Electron beam diffractometer, focused ion analyzer for surface processing, X-ray photoelectron spectrometer for chemical structure analysis, ultraviolet electron photospectrometer,
Further, at least one selected from the group consisting of a scanning probe microscope, an atomic force microscope, a scanning tunnel microscope and a magnetic force microscope.
The analysis method according to 6, 7, 8 or 9. 11. An analysis device for analyzing a minute foreign substance, which is placed on a stage, wherein a sample of which the position of the minute foreign substance is detected by a particle inspection device, is analyzed, the virtual coordinates being based on a fixed point on the outer circumference of the sample. An apparatus for analyzing minute foreign matter, further comprising means for obtaining a system and coordinate conversion means for converting coordinates between the virtual coordinate system and device coordinates. 12. The means for obtaining the virtual coordinate system includes a means for determining a temporary coordinate system based on a temporary sample point on the outer circumference of the sample and a virtual point based on a fixed point on the outer circumference of the sample defined by the temporary coordinate system. The analyzer according to claim 11, further comprising means for defining a coordinate system. 13. A particle inspection device for detecting minute foreign matter on a sample, comprising means for obtaining a virtual coordinate system based on a fixed point on the outer periphery of the sample, and coordinates between the virtual coordinate system and the device coordinates. A particle inspection apparatus additionally provided with coordinate conversion means for converting the above. 14. The means for obtaining the virtual coordinate system comprises means for determining a temporary coordinate system based on temporary sample points on the outer circumference of the sample, and virtual means based on fixed point sample points on the outer circumference of the sample defined by the temporary coordinate system. 14. The particle inspection apparatus according to claim 13, further comprising means for determining a coordinate system. 15. The analysis device comprises a metallographic microscope, a scanning electron microscope, a scanning laser microscope, a microscopic infrared spectroscopic device for analyzing chemical structures, a microscopic Raman spectroscopic device, a photoluminescence device for fluorescent spectroscopic analysis, and a trace amount on the surface. Electron probe microanalysis device for elemental analysis, Auger electron spectrometer, electron energy loss spectrometer, secondary ion mass spectrometer, time-of-flight mass spectrometer, particle beam excited X-ray spectrometer, high-speed reflection for crystal analysis Electron beam diffractometer, focused ion analyzer for surface processing, X-ray photoelectron spectrometer for chemical structure analysis, ultraviolet electron photospectrometer,
The analyzer according to claim 11 or 12, which is at least one selected from the group consisting of a scanning probe microscope, an atomic force microscope, a scanning tunnel microscope, and a magnetic force microscope. 16. A method of manufacturing a semiconductor device comprising at least a cleaning step, a film forming step, an exposure step, an etching step, an ion implantation step, a diffusion step, and a heat treatment step, wherein at least one of the steps is performed. A method of manufacturing a semiconductor device, comprising an inspection step, wherein at least one of the inspection steps is for analyzing minute foreign matter by the method according to claim 1. 17. A method of manufacturing a semiconductor device comprising at least a cleaning step, a film forming step, an exposure step, an etching step, an ion implantation step, a diffusion step, and a heat treatment step, wherein at least one of the steps is performed. A method of manufacturing a semiconductor device, comprising an inspection step, wherein at least one of the inspection steps is for analyzing a minute foreign substance by using the analysis apparatus according to claim 11. 18. A TFT substrate in which at least a thin film transistor and a pixel electrode are provided on an insulative transparent substrate, and a counter substrate in which at least a counter electrode is provided on an insulative transparent substrate are adhered in the periphery with a constant gap. A method for manufacturing a liquid crystal display device, in which a liquid crystal material is injected into the gap,
At least one of a cleaning process, a film forming process, an exposure process, an etching process, an ion implantation process, and a heat treatment process, which are manufacturing processes of the substrate or the counter substrate, is accompanied by an inspection process, and at least one of the inspection processes is performed. A method of manufacturing a liquid crystal display element for analyzing minute foreign matter by the method of. 19. A TFT substrate in which at least a thin film transistor and a pixel electrode are provided on an insulative transparent substrate, and a counter substrate in which at least a counter electrode is provided on an insulative transparent substrate are attached in the periphery with a constant gap. A method for manufacturing a liquid crystal display device, in which a liquid crystal material is injected into the gap,
The cleaning process, the film forming process, the exposure process, the etching process, the ion implantation process, and the heat treatment process, which are manufacturing processes of the substrate or the counter substrate, are accompanied by an inspection process, and at least one of the inspection processes is performed. A method for manufacturing a liquid crystal display element, which is used to analyze minute foreign matter using the analyzer described in 1.