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JPH08226900A - Surface condition inspection method - Google Patents

Surface condition inspection method

Info

Publication number
JPH08226900A
JPH08226900A JP7300680A JP30068095A JPH08226900A JP H08226900 A JPH08226900 A JP H08226900A JP 7300680 A JP7300680 A JP 7300680A JP 30068095 A JP30068095 A JP 30068095A JP H08226900 A JPH08226900 A JP H08226900A
Authority
JP
Japan
Prior art keywords
substrate
inspection
light
circuit pattern
foreign matter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7300680A
Other languages
Japanese (ja)
Inventor
Michio Kono
道生 河野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP7300680A priority Critical patent/JPH08226900A/en
Publication of JPH08226900A publication Critical patent/JPH08226900A/en
Pending legal-status Critical Current

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  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

(57)【要約】 【課題】 レチクルやペリクル面上に付着したゴミ等の
異物を高精度に検出することのできる表面状態検査方法
を得ること。 【解決手段】 互いに異なる方向に延びる複数のパター
ンを備える基板の表面を照明光で照明し、該照明によっ
て基板表面から発生する回折光と散乱光のうち検出方向
に生じる光を検出することによって基板の表面状態を検
査する方法において、基板表面の検査位置に対して複数
の検査状態を設定し、該複数の検査状態のそれぞれで前
記検出方向に生じる光がある場合に、検査位置に異物が
あると判断すること。
(57) 【Abstract】 PROBLEM TO BE SOLVED: To obtain a surface state inspection method capable of highly accurately detecting foreign matter such as dust adhering to the surface of a reticle or a pellicle. A substrate is provided by illuminating the surface of a substrate having a plurality of patterns extending in mutually different directions with illumination light and detecting light generated in the detection direction among diffracted light and scattered light generated from the substrate surface by the illumination. In the method for inspecting the surface state of the substrate, a plurality of inspection states are set for the inspection positions on the substrate surface, and when there is light generated in the detection direction in each of the plurality of inspection states, there is a foreign substance at the inspection position. To judge.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【発明の属する技術分野】本発明は表面状態検査方法に
関し、特に半導体製造装置で使用される回路パターンが
形成されているレチクルやフォトマスク等の基板におい
て、この基板上の回路パターン以外の異物、例えば不透
過性のゴミ等を検出する際に好適な表面状態検査方法に
関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface state inspection method, and more particularly to a substrate such as a reticle or a photomask on which a circuit pattern used in a semiconductor manufacturing apparatus is formed, and foreign matter other than the circuit pattern on the substrate, For example, the present invention relates to a surface state inspection method suitable for detecting impermeable dust and the like.

【0002】[0002]

【従来の技術】一般にIC製造工程においては、レチク
ル又はフォトマスク等の基板上に形成されている露光用
の回路パターンを半導体焼付け装置(ステッパー又はマ
スクアライナー)によりレジストが塗布されたウエハ面
上に転写して製造している。この際、基板面上にゴミ等
の異物が存在すると転写する際、異物も同時に転写され
てしまい、IC製造の歩留りを低下させる原因となって
くる。
2. Description of the Related Art Generally, in an IC manufacturing process, an exposure circuit pattern formed on a substrate such as a reticle or a photomask is formed on a wafer surface coated with a resist by a semiconductor printing apparatus (stepper or mask aligner). It is transcribed and manufactured. At this time, if foreign matter such as dust is present on the surface of the substrate, the foreign matter is also simultaneously transferred at the time of transfer, which causes a decrease in yield of IC manufacturing.

【0003】特にレチクルを使用し、ステップアンドリ
ピート方法により繰り返してウエハ面上に回路パターン
を焼き付ける場合、レチクル面上の1個の異物がウエハ
全面に焼き付けられてしまいIC製造の歩留りを大きく
低下させる原因となってくる。その為、近年前記基板上
のゴミ等の異物の存在が大きな問題点となってきてい
る。そこで、レチクルやフォトマスク等の回路パターン
の欠陥や該回路パターン上の異物を検出する為の種々の
方法が提案されている。
In particular, when a reticle is used and a circuit pattern is repeatedly printed on the wafer surface by the step-and-repeat method, one foreign substance on the reticle surface is printed on the entire surface of the wafer, greatly reducing the yield of IC manufacturing. It becomes a cause. Therefore, in recent years, the presence of foreign matter such as dust on the substrate has become a big problem. Therefore, various methods have been proposed for detecting a defect in a circuit pattern such as a reticle or a photomask and a foreign substance on the circuit pattern.

【0004】それらの方法の一つとして設計データと比
較する方法がある。これは予めレチクル又はフォトマス
クの理想パターンである設計データを計算機処理できる
様、記憶させておいてレーザー等のビームでレチクル等
を照射して、その透過光からのパターンと前記設計デー
タを比較することによりレチクル等の回路パターンの欠
陥や異物を検出する方法であり、パターンジュネレータ
等の誤動作に起因するフォトマスク上の各チップの共通
欠陥も検出可能である。
One of those methods is a method of comparing with design data. This is to store the design data that is the ideal pattern of the reticle or photomask in advance so that it can be processed by a computer, irradiate the reticle with a beam of a laser or the like, and compare the pattern from the transmitted light with the design data. This is a method for detecting a defect in a circuit pattern such as a reticle or a foreign substance, and it is also possible to detect a common defect of each chip on a photomask due to a malfunction of a pattern generator or the like.

【0005】しかしながら、該方法においては膨大な設
計データを扱う為、検査時間が長く、しかも被検物の位
置決めに高い精度が要求される。
However, since the method handles a huge amount of design data, the inspection time is long and high positioning accuracy is required for the positioning of the test object.

【0006】又、別の一方法は隣接するチップ同士で比
較する方法である。これはフォトマスク上のチップパタ
ーン同士を比較することにより欠陥を検出する為、設計
データ等の被検物以外の比較されるものが不要であり、
検査時間も短い。しかしながら、該方法ではステッパー
用のレチクル等で1レチクル中1チップの場合には原理
的に検査することができない。
Another method is to compare adjacent chips. Since this detects defects by comparing the chip patterns on the photomask, it is unnecessary to compare anything other than the test object such as design data,
Inspection time is also short. However, in this method, in the case of a stepper reticle or the like, one chip in one reticle cannot be in principle inspected.

【0007】従って、前記2つの方法はステッパー用の
レチクル検査方法、特に高速の検査を必要とする自動化
した異物検査装置にはいずれも適していない。そこで、
前記欠点を補う方式として異物が等方に光を散乱する特
性を利用した方法があり、例えば図4は該方法を用いた
一実施形態である。
Therefore, neither of the above two methods is suitable for a reticle inspection method for steppers, especially for an automated foreign matter inspection apparatus that requires high-speed inspection. Therefore,
As a method of compensating for the above-mentioned defects, there is a method utilizing the characteristic that a foreign substance scatters light isotropically. For example, FIG. 4 shows an embodiment using this method.

【0008】同図において走査用ミラー22とレンズ2
1を介してレーザー23からの光束の光路をミラー20
の挿入により選択的に2つに分け、2つのミラー15,
19により各々基板5の表面と裏面に順次入射させ、走
査用ミラー22を回転若しくは振動させて基板5上を走
査している。そして基板5からの直接の反射光及び透過
光の光路から離れた位置に複数の受光部16,17,1
8を設け、該複数の受光部16,17,18からの出力
信号を用いて基板5上の異物の存在を検出している。
In the figure, the scanning mirror 22 and the lens 2
The optical path of the light flux from the laser 23 via the mirror 20
By selectively inserting into two, two mirrors 15,
The light is made incident on the front surface and the back surface of the substrate 5 in sequence by 19 and the scanning mirror 22 is rotated or vibrated to scan the substrate 5. A plurality of light receiving portions 16, 17, 1 are provided at positions apart from the optical paths of the reflected light and the transmitted light directly from the substrate 5.
8 is provided, and the presence of foreign matter on the substrate 5 is detected using the output signals from the plurality of light receiving units 16, 17, and 18.

【0009】即ち、回路パターンからの回折光は方向性
が強い為、各受光部からの出力値は異なるが異物からの
回折光は等方的に散乱されている為、各受光部からの出
力値は各々等しくなってくる。従って、このときの各受
光部の出力値を比較することにより異物の存在を検出し
ている。
That is, since the diffracted light from the circuit pattern has a strong directivity, the output values from the respective light receiving parts are different, but the diffracted light from the foreign matter is isotropically scattered, so that the output from each light receiving part is different. The values are equal. Therefore, the presence of foreign matter is detected by comparing the output values of the respective light receiving units at this time.

【0010】一方、回路パターンから異物を分離する分
離精度を上げる為に本出願人は特願昭61-303631 号、特
願昭61-30362号等においてに示す表面状態検査装置を提
案している。
On the other hand, the present applicant has proposed the surface condition inspection device shown in Japanese Patent Application Nos. 61-303631 and 61-30362 in order to increase the accuracy of separating foreign matters from the circuit pattern. .

【0011】同図において、レチクル等の基板5の横方
向c1,c2に対してβの角度をなすB1,B2方向に
斜め上方からレーザービームを入射させて(入射角α
0、図5(B)参照)走査している。そして図5(B)
に示すように、この入射面内で入射側に戻ってくる異物
からの散乱光の内、基板5に対する反射角α1の散乱光
のみを受光している。
In FIG. 1, a laser beam is made incident obliquely from above in the directions B1 and B2 forming an angle β with respect to the lateral directions c1 and c2 of the substrate 5 such as a reticle.
0, see FIG. 5B). And FIG. 5 (B)
As shown in FIG. 7, only the scattered light having the reflection angle α1 with respect to the substrate 5 is received among the scattered light from the foreign matter returning to the incident side on the incident surface.

【0012】図5(A)はこの方式の原理を示したもの
で基板5を真上から見た説明図である。同図において基
板5上の回路パターンは、縦横方向(V1,V2方向、
L1,L2方向)が大部分である為、それらのパターン
にレーザービームが入射すると、パターン回折光はその
直角方向であるL1,L2方向あるいはV1,V2方向
に進む。そこで基板5に対するレーザービームの走査方
向を前記基板5の縦横方向に対して、例えばβの角度を
なす方向にしている。これにより回路パターンからの回
折光は基板5の縦横方向が支配的である為、該回路パタ
ーンからの回折光はわずかしか受光しないが、等方散乱
性のある異物からの回折光は比較的多く受光することに
なる。従って、受光部9からの出力信号の大きさを判定
することにより異物の存在を検出している。
FIG. 5A shows the principle of this system and is an explanatory view of the substrate 5 viewed from directly above. In the figure, the circuit pattern on the substrate 5 is shown in the vertical and horizontal directions (V1, V2 directions,
Since most of them are in the L1 and L2 directions), when a laser beam is incident on these patterns, the pattern diffracted light proceeds in the L1 and L2 directions or the V1 and V2 directions which are the orthogonal directions. Therefore, the scanning direction of the laser beam with respect to the substrate 5 is set to a direction that forms an angle β with the vertical and horizontal directions of the substrate 5. As a result, the diffracted light from the circuit pattern is dominated in the vertical and horizontal directions of the substrate 5, so that only a small amount of diffracted light from the circuit pattern is received, but the diffracted light from a foreign substance having isotropic scattering is relatively large. It will receive light. Therefore, the presence of the foreign matter is detected by determining the magnitude of the output signal from the light receiving unit 9.

【0013】しかしながら、上記従来の方法に依れば基
板5の縦横方向に対してβの角度をなす回路パターンが
存在する場合は、このパターンから異物の場合と同様の
回折光を受光することになり、回路パターンを異物と誤
検知する可能性があった。
However, according to the above-mentioned conventional method, when there is a circuit pattern forming an angle β with respect to the vertical and horizontal directions of the substrate 5, the same diffracted light as in the case of a foreign substance is received from this pattern. Therefore, the circuit pattern may be erroneously detected as a foreign matter.

【0014】[0014]

【発明が解決しようとする課題】本発明は回路パターン
と異物とを高精度に分離して、異物の存在の有無を正確
に判別できる表面状態検査方法の提供を目的とする。
SUMMARY OF THE INVENTION It is an object of the present invention to provide a surface state inspection method capable of accurately separating a circuit pattern and a foreign substance and accurately determining the presence or absence of the foreign substance.

【0015】[0015]

【課題を解決するための手段】本発明の表面状態検査方
法は、(1−1)互いに異なる方向に延びる複数のパタ
ーンを備える基板の表面を照明光で照明し、該照明によ
って基板表面から発生する回折光と散乱光のうち検出方
向に生じる光を検出することによって基板の表面状態を
検査する方法において、基板表面の検査位置に対して複
数の検査状態を設定し、該複数の検査状態のそれぞれで
前記検出方向に生じる光がある場合に、検査位置に異物
があると判断することや、前記基板は回路パターンが形
成された基板であること等を特徴としている。
According to the surface condition inspection method of the present invention, (1-1) the surface of a substrate having a plurality of patterns extending in mutually different directions is illuminated with illumination light, and the illumination is generated from the substrate surface. In the method of inspecting the surface state of the substrate by detecting the light generated in the detection direction among the diffracted light and the scattered light, a plurality of inspection states are set for the inspection position of the substrate surface, and the inspection state of the plurality of inspection states is set. It is characterized in that when there is light generated in each of the detection directions, it is determined that there is a foreign substance at the inspection position, and that the substrate is a substrate on which a circuit pattern is formed.

【0016】[0016]

【発明の実施の形態】図1は本発明の一実施形態の光学
系の概略図である。同図において1はレーザー光源、2
はポリゴンミラー、4は投光部でf−θレンズを有して
いる。5は基板でレチクル等の被測定物であり、該基板
5の表面に回路パターンを形成している。6は集光部で
基板5上の異物からの散乱光束を集光している。7はミ
ラー等の反射部材、8は導光レンズ、9は受光部、150
は回転XYステージである。ポリゴンミラー2と投光部
4は投光手段の一部を構成している。又、集光部6と反
射部材7そして導光レンズは受光手段の一部を構成して
いる。
1 is a schematic view of an optical system according to an embodiment of the present invention. In the figure, 1 is a laser light source, 2
Is a polygon mirror, and 4 is a light projecting section having an f-θ lens. A substrate 5 is an object to be measured such as a reticle, and a circuit pattern is formed on the surface of the substrate 5. A light condensing unit 6 condenses the scattered light flux from the foreign matter on the substrate 5. 7 is a reflecting member such as a mirror, 8 is a light guiding lens, 9 is a light receiving section, and 150
Is a rotary XY stage. The polygon mirror 2 and the light projecting section 4 form a part of the light projecting means. Further, the light collecting section 6, the reflecting member 7 and the light guiding lens constitute a part of the light receiving means.

【0017】レーザー光源1からの光束をポリゴンミラ
ー2により一方向へ反射させ、投光部4により基板5上
の点Oに集光している。そしてポリゴンミラーを回転さ
せ基板5上を点B1から点B2方向に走査すると共に、
基板5を矢印S1若しくは矢印S2方向に移動させるこ
とにより基板5上の全面を走査している。レーザー光源
1、ポリゴンミラー2、そして投光部4は走査光学系の
一要素を構成している。そして、基板5の上方の集光部
6及び反射部材7を介して点P2に集光し、その後導光
レンズ8により受光部(光電変換器)9に導光してい
る。
The light beam from the laser light source 1 is reflected in one direction by the polygon mirror 2 and is condensed at a point O on the substrate 5 by the light projecting section 4. Then, the polygon mirror is rotated to scan the substrate 5 in the direction from point B1 to point B2, and
The entire surface of the substrate 5 is scanned by moving the substrate 5 in the direction of arrow S1 or arrow S2. The laser light source 1, the polygon mirror 2, and the light projecting unit 4 constitute one element of the scanning optical system. Then, the light is condensed at a point P2 via the condensing unit 6 above the substrate 5 and the reflecting member 7, and then guided to the light receiving unit (photoelectric converter) 9 by the light guiding lens 8.

【0018】レンズ8の光軸81の延長上の反射部材7
との交点71と基板5上の交点Oとを結ぶ線は集光部6
の光軸であり、又点Oとポリゴンミラー2の反射点P1
を結ぶ線は投光部4の光軸である。集光部6、反射部材
7、そして導光レンズ8は検出光学系の一要素を構成し
ている。
Reflecting member 7 on extension of optical axis 81 of lens 8.
The line connecting the intersection point 71 with the intersection point O on the substrate 5 is
Of the optical axis of the polygon mirror 2 and the reflection point P1 of the polygon mirror 2
The line connecting the lines is the optical axis of the light projecting unit 4. The condensing unit 6, the reflecting member 7, and the light guide lens 8 form one element of the detection optical system.

【0019】本実施形態における点P2はポリゴンミラ
ー2の回転に伴って、その反射点P1から発散した光束
が基板5上の異物で散乱し、集光部6により集光する位
置である。
The point P2 in this embodiment is the position where the light beam diverging from the reflection point P1 is scattered by the foreign matter on the substrate 5 as the polygon mirror 2 rotates and is condensed by the light condensing unit 6.

【0020】110 は比較処理手段であり、同一のレーザ
光源からの照明光で基板5に対する表面状態の複数回の
検査結果にもとづいて、基板5の表面状態を判別する。
従って、比較処理手段110 は複数回の検査結果を一旦記
憶する記憶回路と、基板の各位置の検査結果同志を順次
比較していく処理回路とを含んでおり、比較処理は予め
決められたシーケンスにもとづいて基板全面に亘り高速
にて実行される。
Reference numeral 110 denotes a comparison processing means, which determines the surface state of the substrate 5 based on a plurality of inspection results of the surface state of the substrate 5 with illumination light from the same laser light source.
Therefore, the comparison processing means 110 includes a storage circuit that temporarily stores the inspection results of a plurality of times and a processing circuit that sequentially compares the inspection results of each position of the substrate, and the comparison processing is performed in a predetermined sequence. Based on this, it is executed at high speed over the entire surface of the substrate.

【0021】100 はコントローラであり、本実施形態に
示す表面状態検査装置の制御を行う。従って、比較処理
手段110 、後述するステージ駆動手段120 、出力装置13
0 等はこのコントローラ100 からの指令に従い作動す
る。又、図示していないが、ポリゴンミラー2やレーザ
ー1などもコントローラ100 により駆動制御して良い
し、キーボード等の入力手段からの信号はコントローラ
100 により処理されて各手段へ指令が伝達される。
Reference numeral 100 denotes a controller, which controls the surface condition inspection apparatus according to this embodiment. Therefore, the comparison processing means 110, the stage driving means 120, which will be described later, and the output device 13
0 etc. operates according to the command from the controller 100. Although not shown, the polygon mirror 2 and the laser 1 may be controlled and controlled by the controller 100, and signals from an input means such as a keyboard may be controlled by the controller.
It is processed by 100 and the command is transmitted to each means.

【0022】120 は基板5が載置されたステージ150 の
駆動を行うステージ駆動手段であり、該ステージ駆動手
段120 はステージ150 をX,Y,θ方向に移動及び回転
させることができる。
Reference numeral 120 denotes a stage driving means for driving the stage 150 on which the substrate 5 is placed, and the stage driving means 120 can move and rotate the stage 150 in the X, Y and θ directions.

【0023】130 は検査結果を出力する出力装置であ
り、衆知のプリンタやCRTなどディスプレイから成
る。ステージ駆動手段120 はコントローラ100 からの信
号にもとづいて、ステージ150 をX方向に移動させる。
このとき基板5は光束により表面を走査されており、ス
テージ150 のX方向への移動によって基板5の全面が走
査され、所定位置からの光が受光素子9により受光され
る。
Reference numeral 130 denotes an output device for outputting the inspection result, which includes a display such as a well-known printer or CRT. The stage driving means 120 moves the stage 150 in the X direction based on a signal from the controller 100.
At this time, the surface of the substrate 5 is scanned by the light flux, the entire surface of the substrate 5 is scanned by the movement of the stage 150 in the X direction, and the light from the predetermined position is received by the light receiving element 9.

【0024】一旦全面走査が完了し、受光素子9からの
信号が全て比較処理手段110 内に記憶された後、コント
ローラ100 から信号にもとづいて、ステージ駆動手段12
0 はステージ150 を所定角度θだけ回転させ、基板5の
受光素子9に対する相対位置(即ち回路パターンの受光
素子9に対する相対位置)を、1回目の検査段階とは異
なる関係とする。
After the entire surface scanning is completed and all the signals from the light receiving element 9 are stored in the comparison processing means 110, the stage driving means 12 is driven based on the signals from the controller 100.
0 rotates the stage 150 by a predetermined angle θ and sets the relative position of the substrate 5 to the light receiving element 9 (that is, the relative position of the circuit pattern to the light receiving element 9) to a relationship different from that in the first inspection step.

【0025】そして、1回目の検査同様、基板5を同一
のレーザ光源からの照明光で走査しつつステージ150 を
X方向に移動させ、基板5の全面を走査して、受光素子
9により基板5の各位置からの光を受光する。受光素子
9からの信号は比較手段110に随時入力されて、2回目
の検査結果が記憶される。
Then, similarly to the first inspection, the stage 150 is moved in the X direction while scanning the substrate 5 with the illumination light from the same laser light source to scan the entire surface of the substrate 5, and the light receiving element 9 causes the substrate 5 to move. The light from each position of is received. The signal from the light receiving element 9 is input to the comparing means 110 at any time, and the second inspection result is stored.

【0026】ここで、この2回目の検査終了後、コント
ローラ100 からの信号にもとづいて、比較処理手段110
では、1回目と2回目の検査結果を基板5の全測定領域
にわたり記憶し、基板5の各位置における表面状態を判
別する。
After completion of the second inspection, the comparison processing means 110 is generated based on the signal from the controller 100.
Then, the first and second inspection results are stored over the entire measurement area of the substrate 5, and the surface state at each position of the substrate 5 is determined.

【0027】判別結果、即ち最終的な表面状態の検査結
果はコントローラ100 を介して、或いはコントローラ10
0 の信号にもとづいて比較処理手段110 から直接出力装
置に入力され、検査結果がデータ又は図面等の形態で出
力される。
The determination result, that is, the final inspection result of the surface condition is sent via the controller 100 or the controller 10.
Based on the signal of 0, it is directly input from the comparison processing means 110 to the output device, and the inspection result is output in the form of data or drawings.

【0028】本実施形態ではポリゴンミラー2の回転に
よって基板5面上を光束で走査する際、一方向の走査に
よって形成される点B1と点B2を結ぶ交線l1が基板
5上に形成されている。主パターン(基板5上の回路パ
ターンの支配的な大部分のパターン)から生じる回折光
の方向と一致しないように基板5を該基板の縦横方向に
対してβの角度をなすように点Oを中心として回転させ
ている。そして、集光部6を該集光部6の光軸の基板5
への投影像が基板5上の前記主パターンから生じる回折
光の方向と一致しないように角度βだけずらして配置し
ている。
In the present embodiment, when the surface of the substrate 5 is scanned with a light beam by the rotation of the polygon mirror 2, an intersection line 11 connecting the points B1 and B2 formed by the unidirectional scanning is formed on the substrate 5. There is. A point O is formed so that the substrate 5 is formed at an angle of β with respect to the vertical and horizontal directions of the substrate so as not to coincide with the direction of the diffracted light generated from the main pattern (the majority of the circuit patterns on the substrate 5). It is rotated as the center. Then, the condensing unit 6 is connected to the substrate 5 having the optical axis of the condensing unit 6.
The projection image on the substrate 5 is displaced by an angle β so as not to coincide with the direction of the diffracted light generated from the main pattern on the substrate 5.

【0029】即ち、本実施形態では集光部6を入射光束
による基板5上の支線l1と対応する集光用の交線l2
が交線l1と略一致するようにして基板5上の異物から
生じる散乱光束を効率良く受光部9に導光している。
That is, in this embodiment, the converging portion 6 is made to intersect with the branch line l1 on the substrate 5 by the incident light beam and the intersecting line 12 for condensing.
The scattered light flux generated from the foreign matter on the substrate 5 is efficiently guided to the light receiving portion 9 such that is substantially coincident with the intersection line l1.

【0030】尚、集光用の交線l2は交線l1と厳密に
一致していなくても異物からの散乱光束が集光可能な範
囲内で交線l1と一致していれば良い。
The converging line 12 for condensing does not have to exactly coincide with the intersecting line 11 as long as it coincides with the intersecting line 11 within a range in which the scattered light beam from the foreign matter can be condensed.

【0031】図2(A),(B) は本発明に係る表面状態検査
状態を示す説明図である。同図は図1の実施形態にて行
った検査に加えて追加検査を行うことにより、誤検知を
無くし、異物の分離精度を高める検査方法を示してい
る。同図(A)は図1に示す実施形態で行った異物の検
出方法を示す説明図である。同図(B)は同図(A)で
示した検査に加えて行う追加検査の方法を示す説明図で
ある。
2 (A) and 2 (B) are explanatory views showing a surface state inspection state according to the present invention. This figure shows an inspection method that eliminates erroneous detection and increases the accuracy of separating foreign matter by performing an additional inspection in addition to the inspection performed in the embodiment of FIG. FIG. 1A is an explanatory diagram showing a foreign matter detection method performed in the embodiment shown in FIG. FIG. 6B is an explanatory diagram showing a method of additional inspection performed in addition to the inspection shown in FIG.

【0032】同図(A),(B) において、5はレチクル若し
くはフォトマスク等の基板、10は回路パターンで基板
5の縦横方向に対して角度βだけ傾いている。O1,O
2はレーザービームの入射方向、B1,B2は方向O
1,O2に垂直な方向である。
In FIGS. 3A and 3B, 5 is a substrate such as a reticle or photomask, and 10 is a circuit pattern which is inclined by an angle β with respect to the vertical and horizontal directions of the substrate 5. O1, O
2 is the incident direction of the laser beam, B1 and B2 are directions O
1, the direction perpendicular to O2.

【0033】基板5上の回路パターンの中には該基板5
の縦横方向に対してβ1の角度をなす方向の回路パター
ン10が含まれているとする。同図(A)において基板
5をレーザービームの入射方向O1,O2に対し時計回
りに角度β1だけ回転させる。そうすると前記基板5の
縦横方向に対してβ1の角度をなす回路パターン10に
レーザービームが入射し、O1,O2方向に比較的強い
回折光が生じる。この為、レーザービームの入射方向に
戻ったパターン回折光が受光されて異物と誤検知する結
果になる。
In the circuit pattern on the substrate 5, the substrate 5
It is assumed that the circuit pattern 10 is included in a direction that forms an angle β1 with respect to the vertical and horizontal directions. In FIG. 9A, the substrate 5 is rotated clockwise by an angle β1 with respect to the laser beam incident directions O1 and O2. Then, the laser beam is incident on the circuit pattern 10 forming an angle β1 with respect to the vertical and horizontal directions of the substrate 5, and relatively strong diffracted light is generated in the O1 and O2 directions. Therefore, the pattern diffracted light returning in the incident direction of the laser beam is received, resulting in erroneous detection as a foreign matter.

【0034】そこで、同図(B)に示しているように基
板5をレーザービームの入射方向O1,O2に対して反
時計回りに角度β1だけ戻し、更に同じく反時計回りに
角度β2だけ回転させる。つまり反時計回りに角度(β
1+β2)だけ回転させて再度検査する。そうすると前
記基板5の縦横方向に対してβ1の角度をなすパターン
10からの回折光は受光方向O1,O2に対して(β1
+β2)の角度をなす方向に出ていく為、受光されな
い。
Therefore, as shown in FIG. 7B, the substrate 5 is returned counterclockwise by an angle β1 with respect to the laser beam incident directions O1 and O2, and is further rotated counterclockwise by an angle β2. . That is, the angle (β
Rotate 1 + β2) and inspect again. Then, the diffracted light from the pattern 10 forming an angle β1 with respect to the vertical and horizontal directions of the substrate 5 is (β1
Light is not received because it goes out in the direction of + β2).

【0035】この様に回路パターン中に基板の縦横方向
に対して、例えばβの角度をなすパターンが含まれてい
る場合、該パターンと同じ方向に走査して検査を行うと
回折光が受光されてパターンが異物かの区別をつけるこ
とはできない。しかし、更に走査方向を変えて(基板の
縦横方向は含まない)再度検査を行うと、もし始めの検
査で検出したものがパターンであれば回折光は受光され
ず、異物であれば回折光の等方散乱性故に受光されるこ
とになり、パターンか異物かの明確な判定を行うことが
できる。
As described above, when the circuit pattern includes a pattern forming an angle β, for example, with respect to the vertical and horizontal directions of the substrate, when the inspection is performed by scanning in the same direction as the pattern, diffracted light is received. It is impossible to distinguish whether the pattern is a foreign matter. However, when the scanning direction is further changed and the inspection is performed again (not including the vertical and horizontal directions of the substrate), if the first inspection detects a pattern, the diffracted light is not received, and if it is a foreign substance, the diffracted light is not received. Since the light is received because of the isotropic scattering property, it is possible to clearly determine whether it is a pattern or a foreign matter.

【0036】そこで、前記2回の検査結果を基板上の各
座標点毎に比較して最終的な判定を行うようにすれば良
い。
Therefore, it is only necessary to compare the two inspection results for each coordinate point on the substrate to make a final determination.

【0037】表1は前記2回の検査結果から回路パター
ンか異物かを判定する例を示したものである。同表にお
いて、例えば回折光を受光した状態をON、受光しない
状態をOFFで夫々表わし、第1回目の検査結果と第2
回目の検査結果の論理積をとるとONのときは異物であ
り、OFFのときはパターンという最終判定になる。
Table 1 shows an example of determining whether a circuit pattern or a foreign substance is obtained from the results of the two inspections. In the table, for example, the state where the diffracted light is received is represented as ON, and the state where the diffracted light is not received is represented as OFF, respectively.
When the logical product of the inspection results of the second time is taken, it is a foreign matter when it is ON, and a final judgment that it is a pattern when it is OFF.

【0038】尚、図2(A),(B) に示した方法において、
更に基板5の回転角度を変えて検査を行い、検査回数を
増やしていくと異物と回路パターンの分離精度をさらに
高めることができる。
In the method shown in FIGS. 2 (A) and 2 (B),
Further, if the rotation angle of the substrate 5 is changed and the inspection is performed and the number of inspections is increased, the accuracy of separating the foreign matter from the circuit pattern can be further improved.

【0039】表2はレーザービームの入射方向に対し
て、β1,β2,β3の3つの夫々角度だけ前記基板5
を回転させて検査を行った結果を示す一例である。同表
においてパターンA,B,Cは基板1の縦若しくは横方
向に対して夫々β1,β2,β3の角度をなすパターン
である。そして表1と同様に夫々の回転角度での検査結
果の論理積をとることにより異物か回路パターンかの最
終的な判定を行っており、表1で示した場合より異物の
分離精度は高いと言える。
Table 2 shows that the substrate 5 is formed at three angles β1, β2 and β3 with respect to the incident direction of the laser beam.
It is an example showing the result of performing the inspection by rotating. In the table, patterns A, B, and C are patterns that form angles β1, β2, and β3 with respect to the vertical or horizontal direction of the substrate 1, respectively. Then, as in the case of Table 1, the final judgment of the foreign matter or the circuit pattern is made by taking the logical product of the inspection results at the respective rotation angles, and the foreign matter separation accuracy is higher than that shown in Table 1. I can say.

【0040】[0040]

【表1】 図3(A),(B) は本発明に係る他の表面状態検査状態の一
例を示す説明図である。同図(A)は基板を回転させな
いで検査を行う説明図、同図(B)は基板を反時計回り
にβの角度だけ回転させて検査を行う説明図である。
[Table 1] 3A and 3B are explanatory views showing an example of another surface state inspection state according to the present invention. FIG. 7A is an explanatory diagram for performing the inspection without rotating the substrate, and FIG. 9B is an explanatory diagram for performing the inspection by rotating the substrate counterclockwise by an angle β.

【0041】同図(A),(B) において、5はレチクルやフ
ォトマスク等の基板、12及び13は受光部で回路パタ
ーンや異物からの回折光を受光する。14は入射レーザ
ービームの基板5上でのビームスポットを表わしてい
る。11は回路パターンで角部を有している。B1,B
2は基板5を回転させないときの該基板5の横方向を示
している。
In FIGS. 1A and 1B, 5 is a substrate such as a reticle or photomask, and 12 and 13 are light receiving portions for receiving diffracted light from a circuit pattern or foreign matter. Reference numeral 14 represents a beam spot of the incident laser beam on the substrate 5. 11 is a circuit pattern having a corner. B1, B
Reference numeral 2 indicates the lateral direction of the substrate 5 when the substrate 5 is not rotated.

【0042】本実施形態は図1の実施形態とは異なり、
比較的大きなビーム径のレーザービームを基板5上の回
路パターンに照射している。これは実際の表面状態検査
装置としては、できるだけ検査速度を上げる為にビーム
径は大きくしようという要求を考慮した為である。
This embodiment differs from the embodiment of FIG.
The circuit pattern on the substrate 5 is irradiated with a laser beam having a relatively large beam diameter. This is because an actual surface condition inspecting device takes into consideration the requirement to increase the beam diameter in order to increase the inspection speed as much as possible.

【0043】一方、ビーム径を小さくすると異物の回折
光の等方散乱性は強まるが検査速度が低下する為、両者
の兼ね合いでビーム径を決定する。通常は、該ビーム径
は30から60μmである。
On the other hand, if the beam diameter is made smaller, the isotropic scattering property of the diffracted light of the foreign matter is strengthened, but the inspection speed is lowered. Therefore, the beam diameter is decided in consideration of both factors. Usually, the beam diameter is 30 to 60 μm.

【0044】一方、基板上の回路パターンは最小で5μ
m前後のものがある為、検査中にビーム径内に多数の回
路パターンが存在することになる。例えば、本実施形態
においては同図(A)に示しているようにビーム径14
の中に存在する異物からの等方散乱性の回折光を異なる
2個所に配置した受光部12及び13によって受光し、
異物の検出を行っているが、前記ビーム径14の中に角
部を有する例えば、くの字型の回路パターン11が存在
した場合、該回路パターン11の直線部による回折光
(矢印で示している)が丁度、前記受光部12及び13
で受光されると2つの受光部12及び13の出力差がな
くなり異物と誤検知してしまうことになる。
On the other hand, the circuit pattern on the substrate is 5 μm minimum.
Since there are some around m, many circuit patterns exist within the beam diameter during inspection. For example, in this embodiment, as shown in FIG.
Isotropically scattered diffracted light from a foreign substance present inside is received by the light receiving portions 12 and 13 arranged at two different positions,
Although foreign matter is detected, if, for example, a V-shaped circuit pattern 11 having a corner in the beam diameter 14 is present, diffracted light by the linear portion of the circuit pattern 11 (shown by an arrow) Is exactly the same as the light receiving parts 12 and 13
When the light is received at, the output difference between the two light receiving units 12 and 13 disappears, resulting in erroneous detection as a foreign substance.

【0045】そこで、同図(B)に示している様に図2
に示した方法を適用して、基板5を反時計回りに例えば
角度βだけ回転させると、前記くの字型の回路パターン
11の直線部からの回折光は受光部12及び13からは
それて行き(矢印で示している)受光されなくなる。
Therefore, as shown in FIG.
When the substrate 5 is rotated counterclockwise by, for example, the angle β by applying the method shown in FIG. 3, the diffracted light from the straight portion of the doglegged circuit pattern 11 is separated from the light receiving portions 12 and 13. Ongoing light (indicated by arrow) is no longer received.

【0046】しかし、もし異物であるならば基板5を角
度βだけ回転させて検査を行っても、受光部12及び1
3においては前回の検査と同様の回折光が受光されるこ
とになる。
However, if it is a foreign substance, even if the substrate 5 is rotated by the angle β for inspection, the light receiving parts 12 and 1 are detected.
In 3, the same diffracted light as in the previous inspection is received.

【0047】表3は図3の実施形態の2回の検査結果を
示した一例である。同表においてPMT1及びPMT2
は夫々受光部12及び13を表わしており、表1及び表
2と同様に2回の検査結果の論理積をとって、ONであ
れば異物、OFFであればパターンという最終判定を行
っている。
Table 3 is an example showing two inspection results of the embodiment of FIG. In the table, PMT1 and PMT2
Represent the light receiving portions 12 and 13, respectively, and, as in Table 1 and Table 2, the logical product of the inspection results of two times is taken, and the final determination of foreign matter if ON and pattern if OFF. .

【0048】図6は本発明に係る表面状態検査方法の概
要を示すブロック図である。同図から明らかな様に、本
発明によれば表面状態の検査を被測定物である基板全面
に対しN回行い、N回の検査結果を比較処理手段により
比較して、精度の良い表面状態の検査結果を得ている。
FIG. 6 is a block diagram showing an outline of the surface condition inspection method according to the present invention. As is clear from the figure, according to the present invention, the surface state is inspected N times on the entire surface of the substrate to be measured, and the inspection results of N times are compared by the comparison processing means to obtain an accurate surface state. Have obtained the inspection results of.

【0049】比較処理手段は、先の実施形態で示した様
にマイクロコンピュータ等に予めプログラミングされた
シーケンスに従い、基板の各位置に対してN回の検査結
果を比較して、各位置に存するものが回路パターンなの
か、或いは異物であるなのか、又は何も存在していない
のかを正確に判別する。
The comparison processing means is present at each position by comparing the inspection results N times with respect to each position on the substrate in accordance with the sequence preprogrammed in the microcomputer as shown in the previous embodiment. Is a circuit pattern, is a foreign substance, or is not present.

【0050】従って、本発明によれば表面状態検査用の
受光素子は原理的に単一であっても正確に検査が行い得
る。又、複数の受光素子を異なる位置に配して受光シス
テムを構成する場合は、本発明を適用することにより表
面状態の検査精度を格段に向上させることが出来る。
Therefore, according to the present invention, even if the light receiving element for surface state inspection is theoretically single, the inspection can be accurately performed. Further, when a plurality of light receiving elements are arranged in different positions to form a light receiving system, the inspection accuracy of the surface state can be remarkably improved by applying the present invention.

【0051】尚、以上述べた実施形態においては、異物
は等方散乱性を有しているという前提の下に基板の表面
状態検査方法を論じてきたが、実際の異物は必ずしも等
方散乱性を有しているわけではなく、やや異方散乱性を
有している場合もある。しかし回路パターンの回折光は
異物の異方散乱性に比較すれば、強い異方散乱性(強い
方向性)を有している為、例えば受光数や受光位置を調
節する等の処置により、異物と回路パターンの分離精度
を高めることができる。
In the embodiments described above, the method for inspecting the surface state of the substrate has been discussed on the assumption that the foreign matter has isotropic scattering property. However, the actual foreign matter does not necessarily have isotropic scattering property. In some cases, it does not have, but may have an anisotropic scattering property. However, since the diffracted light of the circuit pattern has a strong anisotropic scattering property (strong directionality) as compared with the anisotropic scattering property of the foreign material, the foreign material may be treated by, for example, adjusting the number of received light or the light receiving position. The accuracy of separating the circuit pattern can be improved.

【0052】又、基板を回転させる角度は、基板上の回
路パターン中に存在している基板の縦横方向以外の方向
性を持つパターンを考慮して決定するのが良い。
The angle at which the substrate is rotated may be determined in consideration of a pattern existing in the circuit pattern on the substrate and having a direction other than the vertical and horizontal directions of the substrate.

【0053】又、以上述べた実施形態においては、基板
を一定角度だけ回転させる例を示したが、逆に該基板を
固定して相対的に光学系を回転させても良い。つまり、
基板に対して投光手段の一部或いは受光手段の一部のみ
を回転させても同様の効果を期待できる。
Further, in the above-described embodiments, the example in which the substrate is rotated by a certain angle is shown, but conversely, the substrate may be fixed and the optical system may be relatively rotated. That is,
The same effect can be expected by rotating only part of the light projecting means or part of the light receiving means with respect to the substrate.

【0054】更に、本発明は基板上の異物と回路パター
ンを分別する表面状態検査方法だけでなく、一般に基板
に対して照射したレーザービームの散乱状態をもとに該
基板の表面状態を検査する種々の用途に広く適用できる
ものである。
Further, the present invention is not limited to the method for inspecting the surface condition for separating the foreign matter and the circuit pattern on the substrate, but generally, the surface condition of the substrate is inspected based on the scattering condition of the laser beam applied to the substrate. It is widely applicable to various uses.

【0055】[0055]

【表2】 [Table 2]

【0056】[0056]

【発明の効果】本発明に依れば基板と光学系を相対的に
一定角度だけ傾けて再検査することにより、基板上の異
物と回路パターンとの分離精度を大きく高めることがで
き、受光部を増やして検査した場合と同様の効果が得ら
れる為、受光部の感度差や感度変化等による問題を軽減
でき、低コスト化にもつながる表面状態検査方法を達成
することができる。
According to the present invention, by tilting the substrate and the optical system relative to each other by a certain angle and reinspecting, the accuracy of separating the foreign matter on the substrate from the circuit pattern can be greatly improved. Since the same effect as in the case of inspecting by increasing the number can be obtained, it is possible to reduce the problem due to the difference in sensitivity and the change in sensitivity of the light receiving portion, and it is possible to achieve the surface state inspection method which leads to cost reduction.

【0057】特に本発明によれば、検査位置において複
数の検査状態を順次設定し、各検査状態のそれぞれで光
が検出された場合に検査位置に異物があると判断するた
め、複数の各検査を共通の検出系で行うことができ低コ
ストを達成すると共に、複数の検出を同一感度で行える
ため基板上のパターンとは区別して極めて高精度で異物
検査が可能になるという優れた効果を得ることができ
る。
In particular, according to the present invention, a plurality of inspection states are sequentially set at the inspection position, and when light is detected in each of the inspection states, it is determined that there is a foreign substance at the inspection position. Since a common detection system can be used to achieve low cost, and multiple detections can be performed with the same sensitivity, an excellent effect that foreign matter inspection can be performed with extremely high accuracy by being distinguished from the pattern on the substrate be able to.

【図面の簡単な説明】[Brief description of drawings]

【図1】 本発明の一実施形態を示す概略図FIG. 1 is a schematic diagram showing an embodiment of the present invention.

【図2】 本発明に係る表面状態検査状態を示す説明図FIG. 2 is an explanatory view showing a surface state inspection state according to the present invention.

【図3】 本発明に係る表面状態検査状態を示す説明図FIG. 3 is an explanatory view showing a surface state inspection state according to the present invention.

【図4】 従来例の表面状態検査装置を示す概略図FIG. 4 is a schematic diagram showing a conventional surface condition inspection apparatus.

【図5】 図1の実施形態の検査状態を示す説明図FIG. 5 is an explanatory view showing an inspection state of the embodiment of FIG.

【図6】 本発明の一実施形態のブロック図FIG. 6 is a block diagram of an embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1 レーザー光源 2 ポリゴンミラー 4 投光部 5 レチクル等の基板 6 集光部 7 反射部材 8 導光レンズ 9,12,13 受光部 10 回路パターン中の主パターンに対し角度β1の傾
きを持つパターン 11 回路パターン中の主パターン以外の角部を含むパ
ターン 14 レーザービームの基板5上におけるビーム径 100 コントローラ 110 比較処理手段 120 ステージ駆動手段 130 出力装置 150 ステージ
1 Laser Light Source 2 Polygon Mirror 4 Projector 5 Substrate such as Reticle 6 Condenser 7 Reflector 8 Light Guide Lens 9, 12, 13 Light Receiver 10 Pattern with an Inclination of Angle β1 to Main Pattern in Circuit Pattern 11 Patterns including corners other than the main pattern in the circuit pattern 14 Beam diameter of laser beam on substrate 5 100 Controller 110 Comparison processing means 120 Stage driving means 130 Output device 150 Stage

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 21/66 H01L 21/30 502V ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H01L 21/66 H01L 21/30 502V

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 互いに異なる方向に延びる複数のパター
ンを備える基板の表面を照明光で照明し、該照明によっ
て基板表面から発生する回折光と散乱光のうち検出方向
に生じる光を検出することによって基板の表面状態を検
査する方法において、基板表面の検査位置に対して複数
の検査状態を順次設定し、該複数の検査状態のそれぞれ
で前記検出方向に生じる光がある場合に、検査位置に異
物があると判断することを特徴とする表面状態検査方
法。
1. By illuminating the surface of a substrate having a plurality of patterns extending in mutually different directions with illumination light, and detecting the light generated in the detection direction among the diffracted light and scattered light generated from the substrate surface by the illumination. In the method of inspecting the surface state of a substrate, a plurality of inspection states are sequentially set for inspection positions on the substrate surface, and when there is light generated in the detection direction in each of the plurality of inspection states, a foreign substance is present at the inspection position. A method for inspecting a surface condition, which is characterized by determining that there is
【請求項2】 前記基板は回路パターンが形成された基
板であることを特徴とする特許請求の範囲第1項記載の
表面状態検査方法。
2. The surface condition inspection method according to claim 1, wherein the substrate is a substrate on which a circuit pattern is formed.
JP7300680A 1995-10-25 1995-10-25 Surface condition inspection method Pending JPH08226900A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7300680A JPH08226900A (en) 1995-10-25 1995-10-25 Surface condition inspection method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7300680A JPH08226900A (en) 1995-10-25 1995-10-25 Surface condition inspection method

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP21878887A Division JPH0682729B2 (en) 1987-08-31 1987-08-31 Surface condition inspection method and surface condition inspection device

Publications (1)

Publication Number Publication Date
JPH08226900A true JPH08226900A (en) 1996-09-03

Family

ID=17887790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7300680A Pending JPH08226900A (en) 1995-10-25 1995-10-25 Surface condition inspection method

Country Status (1)

Country Link
JP (1) JPH08226900A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009053132A (en) * 2007-08-29 2009-03-12 Hitachi High-Technologies Corp Defect inspection method and defect inspection apparatus
KR101295463B1 (en) * 2010-12-01 2013-08-16 가부시키가이샤 히다치 하이테크놀로지즈 Method of evaluating substrate quality and apparatus thereof
CN109724995A (en) * 2019-01-21 2019-05-07 上海精测半导体技术有限公司 Measurement equipment and its surface detection module and detection method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137050A (en) * 1984-12-07 1986-06-24 Hitachi Ltd Apparatus for inspecting wafer
JPS6211142A (en) * 1985-06-28 1987-01-20 Hitachi Electronics Eng Co Ltd Apparatus for inspecting foreign matter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61137050A (en) * 1984-12-07 1986-06-24 Hitachi Ltd Apparatus for inspecting wafer
JPS6211142A (en) * 1985-06-28 1987-01-20 Hitachi Electronics Eng Co Ltd Apparatus for inspecting foreign matter

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009053132A (en) * 2007-08-29 2009-03-12 Hitachi High-Technologies Corp Defect inspection method and defect inspection apparatus
KR101295463B1 (en) * 2010-12-01 2013-08-16 가부시키가이샤 히다치 하이테크놀로지즈 Method of evaluating substrate quality and apparatus thereof
CN109724995A (en) * 2019-01-21 2019-05-07 上海精测半导体技术有限公司 Measurement equipment and its surface detection module and detection method

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