[go: up one dir, main page]

JPH08217568A - Production of porous electrically conductive silicon carbide sintered body - Google Patents

Production of porous electrically conductive silicon carbide sintered body

Info

Publication number
JPH08217568A
JPH08217568A JP7020382A JP2038295A JPH08217568A JP H08217568 A JPH08217568 A JP H08217568A JP 7020382 A JP7020382 A JP 7020382A JP 2038295 A JP2038295 A JP 2038295A JP H08217568 A JPH08217568 A JP H08217568A
Authority
JP
Japan
Prior art keywords
silicon carbide
particle size
powder
sintered body
carbonaceous material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7020382A
Other languages
Japanese (ja)
Other versions
JP3691536B2 (en
Inventor
Mitsushige Ogawa
充茂 小川
Yasuo Imamura
保男 今村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denka Co Ltd
Original Assignee
Denki Kagaku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Denki Kagaku Kogyo KK filed Critical Denki Kagaku Kogyo KK
Priority to JP02038295A priority Critical patent/JP3691536B2/en
Publication of JPH08217568A publication Critical patent/JPH08217568A/en
Application granted granted Critical
Publication of JP3691536B2 publication Critical patent/JP3691536B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B38/00Porous mortars, concrete, artificial stone or ceramic ware; Preparation thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474Uses not provided for elsewhere in C04B2111/00
    • C04B2111/00793Uses not provided for elsewhere in C04B2111/00 as filters or diaphragms
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2111/00Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/90Electrical properties
    • C04B2111/94Electrically conducting materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Processes For Solid Components From Exhaust (AREA)
  • Resistance Heating (AREA)
  • Filtering Materials (AREA)
  • Ceramic Products (AREA)

Abstract

PURPOSE: To ensure superior oxidation resistance by molding a powdery mixture of specified SiC powder with Si3 N4 powder and a carbonaceous material and firing the resultant molded body in a nonoxidizing atmosphere not contg. N2 . CONSTITUTION: The particle size distribution of SiC powder having 1-50μm average particle diameter is regulated so that the ratio (D10 /D50 ) of the particle diameter of 10% cumulative particle size of the distribution to that of 50% cumulative particle size is made >=0.2 and the SiC powder is mixed with a powdery mixture prepd. by mixing Si3 N4 with a carbonaceous material such as carbon black so that the molar ratio of metallic Si forming the Si3 N4 to carbon is made 1.0-2.0. Proper amts. of water and an org. binder such as PVA are added to the resultant powdery mixture contg. 20-70wt.% SiC and they are kneaded and molded in a prescribed shape. The resultant molded body is dried, dewaxed by heating and fired at 1,600-2,300 deg.C in a nonoxidizing atmosphere not contg. gaseous N2 to obtain the objective porous electrically conductive SiC sintered body having about 1-40μm pore diameter and about >=40% porosity.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ディーゼルエンジン等
から排出される可燃性微粒子の補集用フィルター等に用
いられる多孔質導電性炭化珪素焼結体の製造方法に関す
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a porous conductive silicon carbide sintered body used for a filter for collecting combustible fine particles discharged from a diesel engine or the like.

【0002】[0002]

【従来の技術】ディーゼルエンジン等から排出される可
燃性微粒子を補集するフィルターは、低熱膨張性のコー
ディエライトセラミックが使用されているが、一定量の
微粒子を捕集すると圧力損失が増大するため、定期的に
焼却し再生する必要がある。フィルターの再生は、バー
ナの燃焼ガスを噴射しその燃焼熱で焼却する方法やニク
ロム線ヒータあるいは発熱金属層を組み合わせて加熱し
焼却する方法がとられている。しかし、これらの方法は
外部からフィルターを加熱するため、可燃性微粒子の燃
焼に伴い局所的な発熱と大きな温度勾配によってフィル
ターの溶損や熱応力割れが発生する問題がある。
2. Description of the Related Art A filter which collects combustible fine particles discharged from a diesel engine or the like uses a cordierite ceramic having a low thermal expansion coefficient, but when a certain amount of fine particles are collected, pressure loss increases. Therefore, it is necessary to incinerate and regenerate regularly. The filter is regenerated by injecting the combustion gas of the burner and incinerating it with the combustion heat, or by incinerating it by heating in combination with a nichrome wire heater or a heating metal layer. However, since these methods heat the filter from the outside, there is a problem that melting loss and thermal stress cracking of the filter occur due to local heat generation and a large temperature gradient as the combustible particles burn.

【0003】このため補集した可燃性微粒子を均一に燃
焼し、コンパクトで現状の装置を大きく変更することな
く取り付けられる自己発熱型フィルターが検討されてい
る。この方法で使用されるフィルターは、主に炭化珪
素、珪化モリブデン、炭化チタニウムあるいはランタン
クロマイトを主成分とした導電性セラミックス(特開昭
58-119317,特開平2-42112 )を用いる技術が開示されて
いる。
Therefore, a self-heating type filter, which burns the collected combustible fine particles uniformly, and which is compact and can be attached without largely changing the existing apparatus, has been studied. The filter used in this method is mainly made of conductive ceramics containing silicon carbide, molybdenum silicide, titanium carbide or lanthanum chromite as a main component (Japanese Patent Laid-Open Publication No. Sho.
58-119317, JP-A-2-42112) are disclosed.

【0004】しかしながら、ランタンクロマイトのよう
な導電性の酸化物系セラミックスは、耐熱性が低く熱膨
張率が高いため熱応力割れが発生する問題がある。一
方、珪化モリブデン、炭化チタニウム等の導電性の非酸
化物系セラミックスはフィルター機能を付与するために
気孔率を高くすると容易に酸化し導電性が失われる問題
がある。さらに、純度の高い炭化珪素セラミックは、基
本的に絶縁体であるため、所望の導電性を得るためにT
i、Zrのような周期律表IVa 族元素あるいはV 、Nbのよ
うなVa 族元素の炭化物、窒化物、ホウ化物を添加し、
焼結体中に連続的な導電相を形成させることによって導
電性を付与する必要がある。しかし、これら導電性物質
は多量の添加が必要で、この多量添加によって大気中な
ど酸素を含む雰囲気で容易に酸化を受け導電性が失われ
る問題がある。
However, conductive oxide ceramics such as lanthanum chromite have a problem that thermal stress cracking occurs due to their low heat resistance and high coefficient of thermal expansion. On the other hand, conductive non-oxide ceramics such as molybdenum silicide and titanium carbide have a problem that they easily oxidize and lose conductivity when the porosity is increased to impart a filter function. Furthermore, since high-purity silicon carbide ceramics are basically insulators, in order to obtain the desired conductivity, T
i, the periodic table IV a-group element or V, such as Zr, carbides of V a group element such as Nb, nitrides, borides added,
It is necessary to impart conductivity by forming a continuous conductive phase in the sintered body. However, it is necessary to add a large amount of these electroconductive substances, and there is a problem that the electroconductivity is easily lost in an atmosphere containing oxygen such as the atmosphere due to the addition of a large amount thereof, and the electroconductivity is lost.

【本発明が解決しようとする課題】[Problems to be Solved by the Present Invention]

【0005】本発明は以上の状況に鑑がみなされたもの
であり、導電性付与物質を添加することなく炭化珪素の
導電性を向上し、優れた耐酸化性を付与するとともに、
フィルターとして最適な気孔径及び気孔率を有する多孔
質導電性炭化珪素焼結体を得ることを目的とする。
The present invention has been made in view of the above circumstances. It improves the conductivity of silicon carbide without adding a conductivity-imparting substance and imparts excellent oxidation resistance.
The object is to obtain a porous conductive silicon carbide sintered body having an optimum pore size and porosity as a filter.

【0006】[0006]

【課題を解決するための手段】すなわち、本発明の多孔
質導電性炭化珪素焼結体の製造方法は、炭化珪素、窒化
珪素及び炭素質物質からなる成形体を窒素を含まない非
酸化性雰囲気で焼成することを特徴とする。さらに、本
発明の製造方法の特徴は平均粒子径 1〜 50 μm 、粒度
分布の累積粒度 10%径と 50%径の粒径比(D10/D50) が
0.2以上の炭化珪素粉末、窒化珪素粉末及び炭素質物質
からなる混合粉末であって、炭化珪素粉末の含有量が、
20〜70重量% であり、カーボンに対する窒化珪素を構成
する金属珪素のモル比が 1.0〜 2.0の範囲である混合粉
末を成形し、窒素を含まない非酸化性雰囲気で、1600〜
2300℃の温度で焼成することを特徴とするものである。
That is, according to the method for producing a porous conductive silicon carbide sintered body of the present invention, a molded body made of silicon carbide, silicon nitride and a carbonaceous material is used in a non-oxidizing atmosphere containing no nitrogen. It is characterized by being fired at. Furthermore, the feature of the production method of the present invention is that the average particle size is 1 to 50 μm, the particle size ratio (D 10 / D 50 ) of the cumulative particle size 10% size and 50% size of the particle size distribution is
A mixed powder of silicon carbide powder of 0.2 or more, silicon nitride powder and a carbonaceous substance, wherein the content of silicon carbide powder is
20 to 70% by weight, and a mixed powder having a molar ratio of silicon metal constituting silicon nitride to carbon in the range of 1.0 to 2.0 is molded, and the mixture is heated to 1600 to 1600 in a non-oxidizing atmosphere containing no nitrogen.
It is characterized by firing at a temperature of 2300 ° C.

【0007】以下、さらに詳しく本発明について説明す
る。本発明の製造方法においては、炭化珪素、窒化珪素
及び炭素質物質からなる成形体を窒素を含まない非酸化
性雰囲気で焼成することによって多孔質導電性炭化珪素
焼結体を得るが、炭化珪素、窒化珪素及び炭素質物質か
らなる成形体は、炭化珪素粉末、窒化珪素粉末及び炭素
質物質からなる混合原料を成形してもよいし、また炭化
珪素粉末、金属珪素及び炭素質物質からなる混合原料を
成形して窒化して得られた炭化珪素、窒化珪素及び炭素
質物質からなる成形体であってもよい。
The present invention will be described in more detail below. In the production method of the present invention, a porous conductive silicon carbide sintered body is obtained by firing a molded body made of silicon carbide, silicon nitride and a carbonaceous material in a non-oxidizing atmosphere containing no nitrogen. A molded body made of silicon nitride and a carbonaceous material may be a mixed raw material made of silicon carbide powder, silicon nitride powder and a carbonaceous material, or a mixture made of silicon carbide powder, metallic silicon and a carbonaceous material. It may be a molded body made of silicon carbide, silicon nitride and a carbonaceous material obtained by molding and nitriding the raw material.

【0008】このようにして得られた成形体を炭化反応
によって、導電性物質を添加することなく導電性が向上
し、優れた耐酸化性を付与することができる。また、炭
化珪素粉末の配合量及び粒径を適宜設定することによ
り、所望の気孔率及び気孔径を有する多孔質導電性炭化
珪素焼結体を製造することができる。
By the carbonization reaction of the molded product thus obtained, the conductivity is improved without adding a conductive substance, and excellent oxidation resistance can be imparted. In addition, a porous conductive silicon carbide sintered body having a desired porosity and pore diameter can be manufactured by appropriately setting the compounding amount and particle diameter of the silicon carbide powder.

【0009】本発明の多孔質導電性炭化珪素焼結体の製
造方法において、炭化珪素、窒化珪素及び炭素質物質か
ら成る成形体を窒素含まない非酸化性雰囲気で焼成する
が、その理由は、窒化珪素の分解によって生成した窒素
元素が反応生成するβ型炭化珪素あるいは予め添加した
炭化珪素に不純物として含有され、導電性を向上させる
ためで、ここで含有される窒素元素は粒界相または粒内
に固溶あるいは単独で存在する場合もあるが、炭化珪素
との反応によって化合物として存在することもある。
In the method for producing a porous conductive silicon carbide sintered body of the present invention, a molded body made of silicon carbide, silicon nitride and a carbonaceous material is fired in a nitrogen-free non-oxidizing atmosphere because the reason is as follows. Nitrogen element generated by decomposition of silicon nitride is contained as an impurity in β-type silicon carbide or silicon carbide added in advance as a reaction to improve conductivity, and the nitrogen element contained here is a grain boundary phase or a grain boundary phase. In some cases, it may be present as a solid solution or alone, but it may also be present as a compound by the reaction with silicon carbide.

【0010】炭化珪素、窒化珪素及び炭素質物質から成
る成形体を炭化珪素粉末、窒化珪素粉末及び炭素物質か
らなる混合原料を成形して得る場合、これら原料粉末の
配合は、炭化珪素粉末の含有量が20〜70重量%であり、
カーボンに対する窒化珪素を構成する金属珪素のモル比
が 1.0〜 2.0の範囲とする。炭化珪素の配合量が20重量
%未満では機械的強度が低下し、70重量%を越えると窒
化珪素の転化によって反応生成した窒素元素を含有する
β型炭化珪素が少ないため比抵抗が高くなる。また、カ
ーボンに対する窒化珪素を構成する金属珪素のモル比が
1.0未満では焼結体中にカーボンが残存し、焼結性を阻
害するため粒界相が容易に酸化する。一方、モル比が
2.0を越えると窒化珪素の分解によって生成した金属珪
素の残存量が多く耐酸化性及び機械的強度が低下する。
When a molded body made of silicon carbide, silicon nitride and a carbonaceous material is obtained by molding a mixed raw material made of silicon carbide powder, silicon nitride powder and a carbonaceous material, the blending of these raw material powders includes the inclusion of silicon carbide powder. The amount is 20-70% by weight,
The molar ratio of silicon metal constituting silicon nitride to carbon is in the range of 1.0 to 2.0. When the content of silicon carbide is less than 20% by weight, the mechanical strength is lowered, and when it exceeds 70% by weight, the specific resistance is increased because the amount of β-type silicon carbide containing the nitrogen element produced by the conversion of silicon nitride is small. Further, the molar ratio of silicon metal constituting silicon nitride to carbon is
If it is less than 1.0, carbon remains in the sintered body and inhibits the sinterability, so that the grain boundary phase is easily oxidized. On the other hand, the molar ratio is
If it exceeds 2.0, the amount of metallic silicon produced by the decomposition of silicon nitride is large and the oxidation resistance and mechanical strength are lowered.

【0011】また、本発明の多孔質導電性炭化珪素焼結
体の気孔特性は、気孔径 1〜40μm 、気孔率 40%以上
で、ディーゼルパティキュレートフィルターとして適用
する場合、気孔径 5〜40μm 、気孔率はは50〜80%の範
囲がより好ましい。この理由は気孔径が 5.0μm より小
さいと可燃性微粒子の目詰まりが著しく短時間で圧力損
失が増大し、一方、気孔径が 40 μm を越えると、捕集
効率が低下しフィルター機能を果たさなくなり、また、
気孔率が50%より低いと圧力損失が増大し、80%を越え
ると機械的強度が低下するためである。
Further, the porous conductive silicon carbide sintered body of the present invention has a pore size of 1 to 40 μm, a porosity of 40% or more, and a pore size of 5 to 40 μm when applied as a diesel particulate filter. The porosity is more preferably in the range of 50 to 80%. The reason for this is that if the pore size is smaller than 5.0 μm, the combustible fine particles will be clogged significantly and the pressure loss will increase in a short time. ,Also,
This is because if the porosity is lower than 50%, the pressure loss increases, and if it exceeds 80%, the mechanical strength decreases.

【0012】本発明の導電性多孔質炭化珪素焼結体の製
造方法における気孔特性は、出発原料である炭化珪素粉
末の平均粒径及び粒度分布に依存し、所望の気孔径を得
るためには平均粒径が 1〜50μm 、粒度分布の累積粒度
10%径と 50%径の粒径比(D10/D50) が0.2 以上の粉末を
使用する必要がある。一方、窒化珪素粉末の平均粒径は
成形性及び炭素質物質との反応性の点から 100μm 以下
が好ましい。また、C源となる炭素質物質はカーボンブ
ラック、アセチレンブラック等の微粒子固体カーボン粉
末の他、熱分解などによって炭素となるフェノール、フ
ラン、ポリイミド等の有機系樹脂等を使用することもで
きる。
The pore characteristics in the method for producing a conductive porous silicon carbide sintered body of the present invention depend on the average particle size and particle size distribution of silicon carbide powder as a starting material, and in order to obtain a desired pore size. Average particle size of 1 to 50 μm, cumulative particle size distribution
It is necessary to use a powder having a particle size ratio (D 10 / D 50 ) of 10% diameter to 50% diameter of 0.2 or more. On the other hand, the average particle size of the silicon nitride powder is preferably 100 μm or less from the viewpoint of moldability and reactivity with the carbonaceous substance. Further, as the carbonaceous substance serving as the C source, fine particle solid carbon powder such as carbon black or acetylene black, or an organic resin such as phenol, furan, or polyimide which becomes carbon by thermal decomposition can be used.

【0013】混合原料の成形方法としては、メチルセル
ロース、ポリビニルアルコール等の有機系バインダーを
添加し、プレス成形、押出成形、射出成形あるいはスラ
リーを調整し所望の形状の容器に注入固化して行うこと
ができる。
As a method for molding the mixed raw material, an organic binder such as methyl cellulose or polyvinyl alcohol is added, press molding, extrusion molding, injection molding, or slurry is prepared and poured into a container having a desired shape and solidified. it can.

【0014】次に、炭化珪素、窒化珪素及び炭素質物質
から成る成形体の焼成方法は、1600〜2300℃の焼成温度
で、窒素を含まない非酸化性の雰囲気で焼成する。窒素
を含まない非酸化性の雰囲気としては、真空、アルゴ
ン、一酸化炭素、アンモニア、メタン、水素又はこれら
の二種以上の混合ガス雰囲気が挙げられる。これらの焼
成温度及び雰囲気等の条件は、窒化珪素がβ型炭化珪素
に転化し、さらに耐酸化性を向上させるために必要な条
件で、1600℃より低い温度では窒化珪素の炭化反応が不
十分で焼結体中に窒化珪素が残存するため比抵抗が高く
なる。また、窒素を含む雰囲気では窒化珪素の炭化によ
って反応生成した炭化珪素の粒成長を阻害するため、結
晶粒が小さく耐酸化性が低下する。好ましい焼成温度は
1800 〜 2300 ℃、より好ましくは 1900 〜 2300 ℃、
より好ましい雰囲気は真空中である。
Next, the method of firing the molded body made of silicon carbide, silicon nitride and a carbonaceous material is performed at a firing temperature of 1600 to 2300 ° C. in a non-oxidizing atmosphere containing no nitrogen. Examples of the non-oxidizing atmosphere containing no nitrogen include vacuum, argon, carbon monoxide, ammonia, methane, hydrogen, or a mixed gas atmosphere of two or more of these. Conditions such as firing temperature and atmosphere are necessary for converting silicon nitride into β-type silicon carbide and further improving oxidation resistance. At temperatures lower than 1600 ° C, carbonization reaction of silicon nitride is insufficient. Since silicon nitride remains in the sintered body, the specific resistance becomes high. Further, in an atmosphere containing nitrogen, grain growth of silicon carbide generated by carbonization of silicon nitride is hindered, so that the crystal grains are small and the oxidation resistance is lowered. The preferred firing temperature is
1800 to 2300 ° C, more preferably 1900 to 2300 ° C,
A more preferable atmosphere is vacuum.

【0015】[0015]

【実施例】以下、実施例、比較例を挙げてさらに具体的
に本発明を説明する。
EXAMPLES The present invention will be described more specifically with reference to Examples and Comparative Examples.

【0016】(実施例 1〜5 、比較例 1〜 9)出発原料
として表1記載の粒径(平均粒径、粒度分布粒径比)の
炭化珪素粉末と、カーボンに対する金属珪素のモル比を
調整した窒化珪素粉末及びカーボンブラックの混合粉末
を表1に示す割合で配合した原料 100重量部に対して、
水25重量部、バインダーとしてメチルセルロース10重量
部を添加し、ヘンシェル混合機で10分間混合し、次いで
ニーダ式混練機を用いて30分混練した。得られた混練物
は高圧真空押出成形機を用いて、外径寸法□50mm、セル
寸法2.5mm 、リブ圧0.5mm のハニカムを成形圧力 60 kg
/cm2で押出成形した。得られた成形体は、乾燥後、非酸
化性の雰囲気で 450℃×1hr の脱脂を行った後、表2に
示す焼成条件で焼成した。
(Examples 1 to 5 and Comparative Examples 1 to 9) A silicon carbide powder having a particle size (average particle size, particle size distribution particle size ratio) shown in Table 1 as a starting material and a molar ratio of metallic silicon to carbon were used. With respect to 100 parts by weight of raw materials in which the mixed powder of the adjusted silicon nitride powder and carbon black was mixed in the ratio shown in Table 1,
25 parts by weight of water and 10 parts by weight of methyl cellulose as a binder were added, mixed with a Henschel mixer for 10 minutes, and then kneaded with a kneader type kneader for 30 minutes. Using a high-pressure vacuum extruder, the kneaded product was used to form a honeycomb with an outer diameter of □ 50 mm, a cell size of 2.5 mm, and a rib pressure of 0.5 mm at a pressure of 60 kg.
Extrusion was performed at / cm 2 . The molded body thus obtained was dried, degreased at 450 ° C. for 1 hr in a non-oxidizing atmosphere, and then fired under the firing conditions shown in Table 2.

【0017】得られた焼結体について以下の特性を測定
し表3に示した。 (1) 気孔率:アルキメデス法。 (2) 平均気孔径: 水銀圧入法。 (3) 室温比抵抗:ハニカム構造体を□10×50mmL に切断
し、銀電極を形成し4端子法で測定した (4) 耐酸化性:大気中、温度1000℃×100 時間処理後の
比抵抗を測定した。 (5) 機械的強度:ハニカム構造体を□10×10mmL に切断
し、押出方向における圧縮強度を測定した。
The following properties of the obtained sintered body were measured and shown in Table 3. (1) Porosity: Archimedes method. (2) Average pore size: mercury porosimetry. (3) Room temperature resistivity: Honeycomb structure was cut into □ 10 × 50mmL, silver electrode was formed and measured by 4-probe method. (4) Oxidation resistance: Ratio after treatment at 1000 ℃ for 100 hours in air. The resistance was measured. (5) Mechanical strength: The honeycomb structure was cut into □ 10 × 10 mmL and the compressive strength in the extrusion direction was measured.

【0018】[0018]

【表1】 [Table 1]

【0019】[0019]

【表2】 [Table 2]

【0020】表1〜2から明らかなように、実施例1〜
5で得られた導電性多孔質炭化珪素焼結体は、好適な気
孔率及び平均気孔径を有し、室温比抵抗が低く優れた導
電性を示すとともに、優れた圧縮強度、耐酸化性を示
し、導電性ディーゼルパティキュレートフィルター等と
して優れた特性を有する。
As is clear from Tables 1 and 2, Examples 1 to 1
The electrically conductive porous silicon carbide sintered body obtained in No. 5 has suitable porosity and average pore diameter, has low room temperature specific resistance and excellent conductivity, and has excellent compressive strength and oxidation resistance. It has excellent characteristics as a conductive diesel particulate filter and the like.

【0021】[0021]

【発明の効果】本発明の導電性炭化珪素焼結体の製造方
法によれば、導電性付与材を添加することなく、導電
性、耐酸化性に優れ、フィルターとして最適な気孔率及
び気孔径を有する多孔質導電性炭化珪素焼結体が提供さ
れる。また、本発明の多孔質導電性炭化珪素焼結体の用
途は、特に、ディーゼルエンジンから排出される微粒子
を捕集し燃焼焼却するヒーター性能を有する導電性ディ
ーゼルパティキュレートフィルターとして、さらに、発
熱面積が大きく熱効率を高められる観点から、ダクトヒ
ーター、大型ドライヤーの熱源に使用される熱風発生機
用ヒーターとして最適である。また、暖房機器、調理機
器、乾燥機器、焼成炉等に使用されるヒーターとしても
適している。
EFFECT OF THE INVENTION According to the method for producing a conductive silicon carbide sintered body of the present invention, the conductivity and the oxidation resistance are excellent without adding a conductivity-imparting material, and the optimum porosity and pore diameter as a filter are obtained. There is provided a porous conductive silicon carbide sintered body having: In addition, the application of the porous conductive silicon carbide sintered body of the present invention, in particular, as a conductive diesel particulate filter having a heater performance of collecting and burning incineration of fine particles discharged from a diesel engine, further, a heating area It is most suitable as a duct heater and a heater for a hot air generator used as a heat source for a large dryer from the viewpoint of greatly increasing the heat efficiency. Further, it is also suitable as a heater used for heating equipment, cooking equipment, drying equipment, firing furnaces and the like.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 炭化珪素、窒化珪素及び炭素質物質から
なる成形体を窒素を含まない非酸化性雰囲気で焼成する
ことを特徴とする多孔質導電性炭化珪素焼結体の製造方
法。
1. A method for producing a porous conductive silicon carbide sintered body, which comprises firing a molded body made of silicon carbide, silicon nitride and a carbonaceous material in a non-oxidizing atmosphere containing no nitrogen.
【請求項2】 平均粒子径 1〜 50 μm 、粒度分布の累
積粒度 10%径と 50%径の粒径比(D10/D50) が 0.2以上の
炭化珪素粉末、窒化珪素粉末及び炭素質物質からなる混
合粉末であって、炭化珪素粉末の含有量が20〜70重量%
であり、カーボンに対する窒化珪素を構成する金属珪素
のモル比が 1.0〜 2.0の範囲である混合粉末を成形し、
窒素を含まない非酸化性雰囲気で、1600〜2300℃の温度
で焼成することを特徴とする多孔質導電性炭化珪素焼結
体の製造方法。
2. A silicon carbide powder, a silicon nitride powder and a carbonaceous material having an average particle size of 1 to 50 μm and a particle size ratio (D 10 / D 50 ) of cumulative particle size of 10% to 50% of particle size distribution of 0.2 or more. A mixed powder of substances, wherein the content of silicon carbide powder is 20 to 70% by weight.
And forming a mixed powder in which the molar ratio of metallic silicon constituting silicon nitride to carbon is in the range of 1.0 to 2.0,
A method for producing a porous conductive silicon carbide sintered body, which comprises firing at a temperature of 1600 to 2300 ° C. in a non-oxidizing atmosphere containing no nitrogen.
JP02038295A 1995-02-08 1995-02-08 Method for producing porous conductive silicon carbide sintered body Expired - Lifetime JP3691536B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP02038295A JP3691536B2 (en) 1995-02-08 1995-02-08 Method for producing porous conductive silicon carbide sintered body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02038295A JP3691536B2 (en) 1995-02-08 1995-02-08 Method for producing porous conductive silicon carbide sintered body

Publications (2)

Publication Number Publication Date
JPH08217568A true JPH08217568A (en) 1996-08-27
JP3691536B2 JP3691536B2 (en) 2005-09-07

Family

ID=12025497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02038295A Expired - Lifetime JP3691536B2 (en) 1995-02-08 1995-02-08 Method for producing porous conductive silicon carbide sintered body

Country Status (1)

Country Link
JP (1) JP3691536B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007021409A (en) * 2005-07-19 2007-02-01 Chokoon Zairyo Kenkyusho:Kk Manufacturing method of diesel particulate filter
JP2010126427A (en) * 2008-12-01 2010-06-10 Tokai Konetsu Kogyo Co Ltd Method of manufacturing silicon carbide heating element end part and silicon carbide heating element end part
WO2014156866A1 (en) * 2013-03-28 2014-10-02 株式会社クボタ Silicon nitride porous body, method for producing silicon nitride porous body, honeycomb structure, and honeycomb filter
JP2016183081A (en) * 2015-03-26 2016-10-20 東京窯業株式会社 Method for producing conductive silicon carbide sintered body and conductive silicon carbide sintered body
CN114763303A (en) * 2021-01-13 2022-07-19 中国科学院过程工程研究所 Coal gangue-based heating material and preparation method thereof

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007021409A (en) * 2005-07-19 2007-02-01 Chokoon Zairyo Kenkyusho:Kk Manufacturing method of diesel particulate filter
JP2010126427A (en) * 2008-12-01 2010-06-10 Tokai Konetsu Kogyo Co Ltd Method of manufacturing silicon carbide heating element end part and silicon carbide heating element end part
WO2014156866A1 (en) * 2013-03-28 2014-10-02 株式会社クボタ Silicon nitride porous body, method for producing silicon nitride porous body, honeycomb structure, and honeycomb filter
JP2014193783A (en) * 2013-03-28 2014-10-09 Kubota Corp Silicon nitride-based porous body, method for manufacturing a silicon nitride-based porous body, honeycomb structure, and honeycomb filter
JP2016183081A (en) * 2015-03-26 2016-10-20 東京窯業株式会社 Method for producing conductive silicon carbide sintered body and conductive silicon carbide sintered body
CN114763303A (en) * 2021-01-13 2022-07-19 中国科学院过程工程研究所 Coal gangue-based heating material and preparation method thereof
CN114763303B (en) * 2021-01-13 2023-05-02 中国科学院过程工程研究所 Gangue-based heating material and preparation method thereof

Also Published As

Publication number Publication date
JP3691536B2 (en) 2005-09-07

Similar Documents

Publication Publication Date Title
US5733352A (en) Honeycomb structure, process for its production, its use and heating apparatus
US6555031B2 (en) Process for producing silicon carbide bodies
JP4029175B2 (en) Method for producing porous transmission molded body
JP3548914B2 (en) Method for producing catalyst carrier
JP3681780B2 (en) Porous conductive silicon carbide sintered body, its production method and use
US10350532B2 (en) Porous alpha-SiC-containing shaped body having a contiguous open pore structure
CN102503521B (en) Preparation method of high-strength silicon carbide porous ceramic
JP3642836B2 (en) Silicon carbide honeycomb structure and manufacturing method thereof
JP3691536B2 (en) Method for producing porous conductive silicon carbide sintered body
JP2004501050A (en) Plasticizable mixtures and methods of use thereof
JP5208900B2 (en) Process for producing conductive silicon carbide based porous material for diesel particulate filter
JP2009292708A (en) Manufacturing method of silicon carbide porous body
JP3983838B2 (en) Method for producing high-strength porous α-SiC sintered body
JPH04187578A (en) Production of sintered compact of porous silicon carbide
JP2000016872A (en) Porous silicon carbide sintered body and its production
JPS6245344A (en) Catalyst carrier and its preparation
JPH0246545B2 (en)
JP4041879B2 (en) Ceramic porous body and method for producing the same
JPH0812462A (en) Electroconductive ceramic, its production and use
JP2634612B2 (en) Silicon carbide honeycomb filter and method for producing the same
JP2672545B2 (en) Method for manufacturing silicon carbide honeycomb filter
JP5643575B2 (en) Method for producing silicon carbide porous body
JPH0826827A (en) Electrically conductive reactional silicon carbide sintered compact, its production and use
JP3611345B2 (en) Ceramic and its use
JP4468541B2 (en) Method for producing recrystallized SiC

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20040202

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20040120

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20040910

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050118

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050426

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050519

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20050610

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20050616

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080624

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090624

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20090624

Year of fee payment: 4

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100624

Year of fee payment: 5

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110624

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110624

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120624

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130624

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20140624

Year of fee payment: 9

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term