JPH08203952A - Semiconductor device - Google Patents

Abstract

(57) [Summary] [Object] To provide a semiconductor device capable of preventing film peeling in a bonding pad portion. A first insulating layer 12 formed on a main surface side of a semiconductor substrate 11, and a first conductive layer 13 in contact with the first insulating layer 12.
A second insulating layer 14 formed on the first insulating layer 13 and having an opening 14a, and the first conductive layer 1 at the opening 14a.
3 and a third conductive layer 16 which is in contact with the second conductive layer 15 and serves as a connection terminal of a bonding wire.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present application relates to a semiconductor device, and more particularly to a structure of a bonding pad portion thereof.

[0002]

2. Description of the Related Art FIG. 4 shows a conventional example and shows a structure of a bonding pad portion of a semiconductor device. Reference numeral 21 is a silicon substrate, 22 is an interlayer insulating layer, 23 is a barrier metal layer, 24 is an aluminum layer serving as a bonding pad, 25 is a protective insulating layer, and 25a is an opening provided in the protective insulating layer. The barrier metal layer 23 and the aluminum layer 24 are patterned simultaneously with the patterning of the barrier metal layer / aluminum layer of the source / drain contact of the MOS transistor. Therefore, the barrier metal layer 23 is inevitably formed between the interlayer insulating layer 22 and the aluminum layer 24.

[0003]

However, in general, the interlayer insulating layer 22 (formed by using silicon oxide, PSG or the like) and the barrier metal layer 23 (formed by using Ti / TiN or the like). Adhesion with is not so good, and as the size of the bonding pad is reduced, the adhesion is further reduced. Therefore, there is a problem in that the barrier metal layer 23 / aluminum layer 24 is easily peeled off due to a failure during wire bonding, leading to a decrease in reliability.

An object of the present invention is to provide a semiconductor device capable of preventing film peeling in a bonding pad portion.

[0005]

According to another aspect of the present invention, there is provided a semiconductor device including a first insulating layer formed on a main surface side of a semiconductor substrate, a first conductive layer in contact with the first insulating layer, and the first insulating layer. A second insulating layer formed on the upper surface and having an opening; a second conductive layer in contact with the first conductive layer in the opening;
The third that is in contact with the conductive layer and serves as the connection terminal of the bonding wire
And a conductive layer.

[0006]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 shows a first embodiment and shows the structure of a bonding pad portion of a semiconductor device.

Reference numeral 11 is a silicon substrate. Reference numeral 12 is a first insulating layer (layer thickness of about 500 to 1000 nm), which is LOC
Element isolation layer of OS structure (constituent material is silicon oxide) and interlayer insulating layer (constituent material is silicon oxide, PSG, BPSG)
Etc.).

Reference numeral 13 denotes a first conductive layer (layer thickness 200 to 400 n).
m) and the same material and process as the gate electrode of the MOS transistor (the constituent material is polysilicon etc.), or the first layer of the multilayer wiring (the constituent material is Al).
(Aluminum) and the like) and the same process.

Reference numeral 14 denotes a second insulating layer (layer thickness 500 to 1000).
and the interlayer insulating layer (constituent material is silicon oxide, PSG, BPSG, etc.). The second insulating layer 14 has an opening 14a (each side length is about 100 μm).

Reference numeral 15 is a second conductive layer (layer thickness of about 100 nm)
The barrier metal layer of the source / drain contact of the MOS transistor (high melting point metal such as Ti (titanium), W (tungsten), Mo (molybdenum) or a laminated structure of Ti / TiN is used. The same material and the same process as the above). Reference numeral 16 denotes a third conductive layer (layer thickness of about 500 to 1000 nm), which is a source / drain electrode (Al, Al-Si, A) on the barrier metal layer of the source / drain contact of the MOS transistor.
1-Cu, Al-Cu-Si, or the like is used. ) And the same material and the same process. That is, the second conductive layer 15 and the third conductive layer 16 are the barrier metal layer / source of the source / drain contact of the MOS transistor.
This is done simultaneously with the patterning of the drain electrode. Second conductive layer 15 and third conductive layer 1
6 is formed corresponding to the opening 14a of the second insulating layer 14, and the lower surface of the second conductive layer 15 is in contact with the upper surface of the first conductive layer 13. The third conductive layer 16 serves as a connection terminal of the bonding wire.

Reference numeral 17 is a protective insulating layer (layer thickness of about 1000 nm), which is formed using silicon nitride, PSG, BPSG or the like.

In the first embodiment described above, the first insulating layer 12 and the second conductive layer 1 having poor adhesion to the first insulating layer 12 are used.
Between the first insulating layer 12 and the first insulating layer 12
Since the conductive layer 13 is provided, as a result, the adhesion between the first insulating layer 12 and the second conductive layer 15 via the first conductive layer 13 is improved. Therefore, it is not possible to use wire bonding.
It is possible to prevent the film peeling of the second conductive layer 15 / third conductive layer 16 due to a phenomenon such as a dip.

Further, since the first conductive layer 13 is provided, the layer thickness of the bonding pad portion is correspondingly increased, so that the damage at the time of wire bonding can be alleviated.

2 and 3 show a second embodiment. Since the basic configuration is similar to that of the first embodiment shown in FIG. 1, substantially the same components are designated by the same reference numerals, and the description thereof will be omitted. In FIG. 3, the second insulating layer 1
4 and the opening 14a are shown, and others are omitted.

In the second embodiment, a plurality of openings 14a of the second insulating layer 14 are provided in the bonding pad portion to further improve the adhesion between the first conductive layer 13 and the second conductive layer 15. is there. The first conductive layer 13 and the second conductive layer 15 can be formed by appropriately adjusting the size and spacing of the openings 14a.
It is possible to appropriately adjust the adhesion to.

Needless to say, the same effects as in the first embodiment can be obtained in the second embodiment.

[0017]

According to the invention of the present application, since the first conductive layer is provided between the first insulating layer and the second conductive layer, a layer having good adhesion to the first insulating layer as the first conductive layer. Can be used, and the adhesion between the first insulating layer and the second conductive layer via the first conductive layer can be improved. Therefore, it is possible to prevent film peeling due to damage or the like during wire bonding.

[Brief description of drawings]

FIG. 1 is an explanatory diagram showing a first embodiment of the invention related to the present application.

FIG. 2 is an explanatory view showing a second embodiment of the invention related to the present application.

FIG. 3 is an explanatory view showing a second embodiment of the invention related to the present application.

FIG. 4 is an explanatory diagram showing a conventional example.

[Explanation of symbols]

 11 ... Semiconductor substrate 12 ... 1st insulating layer 13 ... 1st conductive layer 14 ... 2nd insulating layer 14a ... Opening part 15 ... 2nd conductive layer 16 ... 3rd conductive layer

Claims (1)

[Claims] 1. A first insulating layer formed on the main surface side of a semiconductor substrate, a first conductive layer in contact with the first insulating layer, and a second insulating layer formed on the first insulating layer and having an opening. A semiconductor device having a layer, a second conductive layer in contact with the first conductive layer in the opening, and a third conductive layer in contact with the second conductive layer and serving as a connection terminal of a bonding wire.