JPH08203821A - Pattern formation method - Google Patents

Abstract

(57) [Abstract] [Purpose] When a predetermined pattern is formed by applying a mask pattern of a resist to a thin film made of a resist or wax which is dissolved by an organic solvent provided on a substrate, the pattern is formed. It is possible to obtain a high quality thin film pattern by removing only the mask pattern provided on the thin film without affecting the thin film. [Structure] When a predetermined pattern is formed on a thin film by applying a mask pattern made of a resist on the thin film, a thin film that is insensitive to ultraviolet rays is used and a resist sensitive to ultraviolet rays is photo-etched. Thus, a mask pattern is formed, and finally, the mask pattern is removed by exposure to ultraviolet light and a phenomenon treatment.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pattern forming method for forming a predetermined pattern on a thin film of resist or wax provided on a substrate.

[0002]

2. Description of the Related Art For the reason that it is necessary to remove with an organic solvent, it is necessary to form a predetermined pattern on a thin film made of a resist which is dissolved by an organic solvent on a substrate. Then, for example, an EB (electron beam) resist is used that is dissolved by an organic solvent, a thin film is formed by applying the resist on a substrate, and the resist that is dissolved by the organic solvent is patterned on the thin film. A mask pattern formed by the above process is provided, the EB resist is patterned by gas etching, and then the mask pattern is removed by gas etching.

[0003]

The problem to be solved is to pattern a resist dissolved in an organic solvent on a thin film made of a resist or a wax dissolved in an organic solvent provided on a substrate. If an attempt is made to remove the mask pattern with an organic solvent after forming a predetermined pattern on the thin film by applying the formed mask pattern, even the thin film having the pattern formed thereon will be dissolved by the organic solvent. In addition, if the mask pattern is to be removed by gas etching, it is difficult to selectively etch the mask pattern and the thin film.

[0004]

According to the present invention, when a predetermined pattern is formed by applying a resist mask pattern to a thin film made of a resist or a wax which is dissolved by an organic solvent provided on a substrate, the pattern is formed. In order to obtain a high quality thin film pattern by removing only the mask pattern provided on the thin film without affecting the thin film formed on the substrate, it is possible to use an organic solvent on the substrate. A step of forming a thin film made of a resist or a wax which is insoluble and insensitive to ultraviolet rays,
A step of forming a photoresist layer sensitive to ultraviolet rays on the thin film, a step of exposing the photoresist layer to ultraviolet rays by applying a photomask on the photoresist layer, and the exposed portion of the photoresist layer is removed by a phenomenon. The process, the process of forming a predetermined pattern by etching the thin film using the phenomenon-treated photoresist layer as a mask pattern, and exposing the entire surface of the phenomenon-treated photoresist layer with ultraviolet rays, And a step of removing the photoresist layer.

[0005]

FIG. 1 shows the steps of a pattern forming method according to the present invention.

In the present invention, first, as shown in FIG. 1A, a thin film 2 is formed on a substrate 1 by applying a resist or wax which is soluble in an organic solvent and is insensitive to ultraviolet rays. Then, a photoresist sensitive to ultraviolet rays is applied on the thin film 2 to form a photoresist layer 3.

Next, as shown in FIG. 1B, a photomask 4 is applied on the photoresist layer 3 and then exposed to ultraviolet UV so that the photoresist layer 3 is exposed. The part not covered by the mask 4 is made to melt by the phenomenon liquid.

Then, as shown in FIG. 1C, the exposed portion of the photoresist layer 3 is removed by immersing it in a phenomenon liquid to perform patterning.

Next, as shown in FIG. 1D, the photoresist layer 3 patterned by the phenomenon treatment.
Is used as a mask pattern to etch the thin film 2 to form a predetermined pattern therein.

At this time, the thin film 2 is etched by an etching gas.

Next, as shown in FIG. 1E, ultraviolet rays U are applied to the entire surface of the photoresist layer 3 as a mask pattern.
Exposure with V is performed.

Finally, as shown in FIG. 1F, the photoresist layer 3 is removed by immersing it in a phenomenon liquid to obtain a thin film 2 having a predetermined pattern formed on the substrate 1.

Thus, according to the pattern forming method of the present invention, the thin film 2 made of the resist or the wax, which is provided on the substrate 1 and is dissolved by the organic solvent, is masked with the photoresist layer 3 to form a predetermined pattern. After forming the pattern, when removing the mask pattern, the photoresist layer 3 as the mask pattern is not affected by the thin film 2 on which the pattern is formed.
Only will be able to be removed.

[0014]

As described above, in the pattern forming method according to the present invention, a predetermined pattern is formed on a thin film of resist or wax dissolved by an organic solvent by applying a mask pattern of the resist on the thin film and etching the thin film. In doing so, use a thin film that is not sensitive to ultraviolet light, form a mask pattern by photoetching the resist that is sensitive to ultraviolet light, and finally remove the mask pattern by ultraviolet light exposure and phenomenon treatment. Therefore, there is an advantage that a thin film pattern with good quality can be obtained by removing only the mask pattern provided on the thin film without affecting the thin film on which the predetermined pattern is formed. ing.

[Brief description of drawings]

FIG. 1 is a process drawing showing an embodiment of a pattern forming method according to the present invention.

[Explanation of symbols]

 1 substrate 2 thin film 3 photoresist layer as a mask pattern 4 photomask

Claims (1)

[Claims] 1. A step of forming a thin film of a resist or a wax which is soluble in an organic solvent and is insensitive to ultraviolet rays on a substrate, and a step of forming a photoresist layer sensitive to ultraviolet rays on the thin film. And a step of exposing the photoresist layer to ultraviolet rays by applying a photomask on the photoresist layer, a step of removing the exposed portion of the photoresist layer by a phenomenon, and a thin film with the phenomenon-treated photoresist layer as a mask pattern. A pattern forming method comprising: a step of forming a predetermined pattern by etching; and a step of exposing a whole surface of a photoresist layer subjected to a phenomenon treatment to ultraviolet rays and then removing the photoresist layer due to a phenomenon.