JPH08194B2 - Gas purifying agent and gas purification method using the same - Google Patents
Gas purifying agent and gas purification method using the sameInfo
- Publication number
- JPH08194B2 JPH08194B2 JP61283835A JP28383586A JPH08194B2 JP H08194 B2 JPH08194 B2 JP H08194B2 JP 61283835 A JP61283835 A JP 61283835A JP 28383586 A JP28383586 A JP 28383586A JP H08194 B2 JPH08194 B2 JP H08194B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- purifying agent
- gas purifying
- impurities
- purification method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000012629 purifying agent Substances 0.000 title claims description 32
- 238000000034 method Methods 0.000 title claims description 15
- 238000000746 purification Methods 0.000 title claims description 9
- 239000007789 gas Substances 0.000 claims description 71
- 239000012535 impurity Substances 0.000 claims description 23
- 239000010936 titanium Substances 0.000 claims description 15
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 14
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 14
- 239000007787 solid Substances 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052744 lithium Inorganic materials 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 229910001868 water Inorganic materials 0.000 claims description 7
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 6
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 6
- 239000000919 ceramic Substances 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 239000011148 porous material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001569 carbon dioxide Substances 0.000 claims description 3
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004817 gas chromatography Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- 229910052756 noble gas Inorganic materials 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- RYZCLUQMCYZBJQ-UHFFFAOYSA-H lead(2+);dicarbonate;dihydroxide Chemical compound [OH-].[OH-].[Pb+2].[Pb+2].[Pb+2].[O-]C([O-])=O.[O-]C([O-])=O RYZCLUQMCYZBJQ-UHFFFAOYSA-H 0.000 description 1
- IDBFBDSKYCUNPW-UHFFFAOYSA-N lithium nitride Chemical compound [Li]N([Li])[Li] IDBFBDSKYCUNPW-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Gas Separation By Absorption (AREA)
- Solid-Sorbent Or Filter-Aiding Compositions (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明はアルゴン（Ar），ヘリウム（He），ネオン
（Ne），クリプトン（Kr），ゼノン（Xe），ラドン（R
n）等の希ガス及びメタン（CH4）等の一部の炭化水素ガ
ス中に微量に含有される不純物を除去できる新規なガス
純化剤およびその純化剤を使用したガス精製方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial field of application] The present invention relates to argon (Ar), helium (He), neon (Ne), krypton (Kr), xenon (Xe), and radon (R).
The present invention relates to a novel gas purifying agent capable of removing a trace amount of impurities contained in noble gases such as n) and some hydrocarbon gases such as methane (CH 4 ) and a gas purification method using the purifying agent.
前記希ガスやCH4等は、例えばArは半導体製造プロセ
スにおける雰囲気ガスやキャリアガスとして、CH4は太
陽電池用アモルファスの製造用ガスとして、Ar,Ne,Kr,X
eは電球用封入ガスとして、また、Ar,Heはガスクロマト
グラフィー用のキャリアガスとして種々の産業分野で、
使用されている。そして前記の分野では、その使用態様
から極めて高純度のガスが求められるが、前記ガスは、
その製造課程において窒素（N2），酸素（O2），一酸化
炭素（CO），二酸化炭素（CO2），水素（H2），水分等
の不純物を含むもので、これら不純物の除去が必要にな
る。The rare gas, CH 4, etc., for example, Ar as an atmosphere gas or a carrier gas in the semiconductor manufacturing process, CH 4 as a gas for producing an amorphous solar cell, Ar, Ne, Kr, X
e is a sealed gas for electric bulbs, and Ar and He are carrier gases for gas chromatography in various industrial fields.
It is used. And in the above-mentioned field, an extremely high-purity gas is required from its usage, but the gas is
In the manufacturing process, it contains impurities such as nitrogen (N 2 ), oxygen (O 2 ), carbon monoxide (CO), carbon dioxide (CO 2 ), hydrogen (H 2 ), and water. You will need it.
従来この種ガス中の前記不純物の除去はチタン（Ti）
の多孔物質（Tiスポンジ）及びジルコニウム（Zr）の多
孔質物（Zrスポンジ）等の純化剤に前記ガスを所定の温
度下で接触させることにより該不純物を除去していた。Conventionally, titanium (Ti) is used to remove the impurities in this kind of gas.
The impurities were removed by bringing the gas into contact with a purifying agent such as a porous substance (Ti sponge) and a porous substance (Zr sponge) of zirconium (Zr) at a predetermined temperature.
しかしながら、前記Tiスポンジ,Zrスポンジでは前記
不純物のうち化学的に安定なN2を除去するためには800
℃〜1000℃の温度下で接触させねばならず耐熱手段，加
熱コストの点で設備的，経済的に不都合であった。However, with the Ti sponge and Zr sponge, in order to remove chemically stable N 2 of the impurities, 800
Since they had to be contacted at temperatures of ℃ to 1000 ℃, it was inconvenient in terms of equipment and economics in terms of heat resistance and heating costs.
本発明は前記不都合に鑑み、化学的に安定な前記不純
物N2の除去を従来より低い温度で実現でき、実用的に有
利なガス純化剤とそれを用いたガス精製方法に係るもの
であり、リチウム（Li）をガス純化剤として新規に採用
したものである。即ち、第１発明の特徴は金属、もしく
はセラミックスでなる固型担体にリチウムを蒸着したガ
ス純化剤であり、第２発明は窒素，酸素，一酸化炭素，
二酸化炭素，水素，水分等を不純物として含有する希ガ
スまたはメタンガスを、金属もしくはセラミックスでな
る固型担体にリチウムを蒸着してなるガス純化剤に150
℃〜300℃、望ましくは200℃〜250℃で接触させること
により前記不純物を除去するガス精製方法にある。In view of the inconvenience, the present invention relates to a gas purifying method using the gas purifying agent and the gas purifying agent, which can realize the chemically stable removal of the impurity N 2 at a lower temperature than conventional ones, Lithium (Li) is newly adopted as a gas purifying agent. That is, the feature of the first invention is a gas purifying agent in which lithium is vapor-deposited on a solid support made of metal or ceramics, and the second invention is nitrogen, oxygen, carbon monoxide,
A noble gas or methane gas containing carbon dioxide, hydrogen, water, etc. as impurities is used as a gas purifying agent by depositing lithium on a solid support made of metal or ceramics.
There is a gas purification method for removing the impurities by contacting at a temperature of 300 to 300 ° C, preferably 200 to 250 ° C.
以下に本発明に係るガス純化剤と、それの製造方法の実
施例について説明する。Examples of the gas purifying agent according to the present invention and a method for producing the same will be described below.
Liは銀白色で固体の単体中最も軽いアルカリ金属であ
り、その性質として高温下でN2と接触させると窒化リチ
ウムを生ずることはよく知られている。従ってこれを純
化剤として使用することが考えられるが金属塊のまま使
用すると、 単位重量当りの表面積が小さいので反応量が少な
く、また、常温では反応性が低いので、150℃〜200℃と
して、より反応性を高めて使用するのが好ましいが、Li
の融点である179℃以上の使用ではLiの金属塊が液状と
なって流動し、これが純化されたガスに同伴されて純化
したガスを汚す不都合がある。Li is the lightest alkali metal among silver-white and solid simple substances, and it is well known that Li produces lithium nitride when contacted with N 2 at high temperature. Therefore, it can be considered to use this as a purifying agent, but if it is used as it is as a metal lump, the surface area per unit weight is small, so the reaction amount is small, and the reactivity at room temperature is low, so it is 150 ℃ ~ 200 ℃, It is preferable to use it with higher reactivity, but Li
If the melting point of 179 ° C. or higher is used, the metallic mass of Li flows in a liquid state and is entrained in the purified gas, which contaminates the purified gas.
Liの金属塊は水に接触すると急激な反応を起すので
安全上極めて取扱いにくい。Li metal ingots react very rapidly with water, and are extremely difficult to handle for safety reasons.
等の問題点がある。従ってLiをガス純化剤として採用す
るにはこれらの問題点を解決せねばならない。There are problems such as. Therefore, in order to adopt Li as a gas purifying agent, these problems must be solved.
本発明者はこのようなことから種々考究した結果、Ti
スポンジにLiを蒸着させたものでは、 （イ） Liの表面積が増加すること、反面水との反応は
緩慢になること （ロ） 150℃〜300℃という従来のTiスポンジ,Zrスポ
ンジに比べて遥かに低い接触温度でN2を除去でき、しか
も前記接触温度内でLiの融点温度以上の使用でもTiスポ
ンジに蒸着させたLiは放散することがなくガス純化剤と
して充分に使用し得ること 等を知見した。本発明は前記（イ），（ロ）の知見に基
づくものであり、その構成は金属もしくはセラミックス
でなる固型担体にリチウムを蒸着したものである。The present inventor conducted various studies based on the above findings and found that Ti
In the case where the sponge is vapor-deposited with Li, (a) the surface area of Li increases, but the reaction with water becomes slower. It is possible to remove N 2 at a much lower contact temperature, and even if it is used at a temperature above the melting point of Li within the contact temperature, the Li deposited on the Ti sponge does not emit and can be sufficiently used as a gas purifying agent. I found out. The present invention is based on the findings of the above (a) and (b), and has a structure in which lithium is vapor-deposited on a solid support made of metal or ceramics.
このように本発明に係るガス純化剤は、固型担体にリ
チウムを蒸着してなることを特徴とするものであるが、
以下にその製造方法について説明する。As described above, the gas purifying agent according to the present invention is characterized in that lithium is vapor-deposited on the solid carrier.
The manufacturing method will be described below.
第１図は本発明に係るガス純化剤を製造するための製
造管の縦断面図で、筒状容器体１の内部を多孔板２で上
下に仕切って上室3,下室４を区画し、そして該上室３に
上室管５を、又下室４に該下室４内底部で開口端が上方
に突出するよう配置して、下室管６を連設して形成され
ている。FIG. 1 is a vertical cross-sectional view of a production pipe for producing the gas purifying agent according to the present invention. The inside of the cylindrical container body 1 is vertically divided by a perforated plate 2 to divide an upper chamber 3 and a lower chamber 4. The upper chamber 3 is formed by connecting the upper chamber pipe 5 to the upper chamber 3 and the lower chamber 4 such that the opening end of the lower chamber 4 projects upward at the inner bottom of the lower chamber 4. .
このように構成した製造管を用いてまず、上室３内に
Liの金属塊を入れ、上室管５から加熱したArガスを導入
して下室管６に流通させることによってLiを加熱溶融さ
せる。First, in the upper chamber 3 using the manufacturing pipe configured as described above,
A metallic lump of Li is charged, and heated Ar gas is introduced from the upper chamber tube 5 and circulated in the lower chamber tube 6 to heat and melt Li.
この結果溶融した液状Liは多孔板２を通って下室４に
落下し該室４の底部に貯留する。次いで上室３内にTiス
ポンジ８を充填した後、下室管６から800℃〜1000℃に
加熱したArガスを導入し上室管５に流通させることによ
ってLiを蒸発させるとともに該Li蒸発蒸気を同伴して上
室３に搬送しTiスポンジ８に蒸着させて本発明のガス純
化剤を得る。As a result, the melted liquid Li passes through the perforated plate 2 and drops into the lower chamber 4 and is stored at the bottom of the chamber 4. Then, after filling Ti sponge 8 in the upper chamber 3, Ar gas heated from 800 ° C. to 1000 ° C. is introduced from the lower chamber pipe 6 and passed through the upper chamber pipe 5 to evaporate Li and vaporize the Li vapor. The gas purifying agent of the present invention is obtained by transporting it to the upper chamber 3 and depositing it on the Ti sponge 8.
尚、前記製造方法は単なる一例を示したもので、他の
方法、例えば下室４内にLiの金属塊を入れ該下室４の側
壁にLi溶融用のガス導入管を設けて該下室４内でLiを溶
解し、前記例の如く上室３内にTiスポンジを充填して、
下室４より上室３に向けて加熱Arを流してLi蒸気を上室
３に搬送して本発明の純化剤を得る方法や、Li溶解用の
ガスを導入する方法に替えて真空中でLiを蒸着させる等
適宜な製造方法を行なうことができる。Incidentally, the above-mentioned manufacturing method is merely an example, and another method, for example, a metal ingot of Li is put in the lower chamber 4 and a gas introduction pipe for melting Li is provided on the side wall of the lower chamber 4, Li is melted in 4, and Ti sponge is filled in the upper chamber 3 as in the above example,
In a vacuum, instead of the method of flowing the heating Ar from the lower chamber 4 toward the upper chamber 3 to convey Li vapor to the upper chamber 3 to obtain the purifying agent of the present invention, or the method of introducing a gas for melting Li, An appropriate manufacturing method such as vapor deposition of Li can be performed.
以上の如く製造された本発明のガス純化剤は、水中に
投下してもH2の泡が生ずるのみで、Liの金属塊の場合の
如き急激な反応の起きないことが確認できた。これによ
り本願発明のガス純化剤は取扱いが安全容易である。It was confirmed that the gas purifying agent of the present invention produced as described above produces only H 2 bubbles even when it is dropped in water, and does not cause a rapid reaction as in the case of a Li metal block. Therefore, the gas purifying agent of the present invention is safe and easy to handle.
次に本発明の第２発明は、N2,O2,CO,CO2,H2,H2O等を
不純物として含有する希ガスまたはメタンガスを前記ガ
ス純化剤に150℃〜300℃、望ましくは200℃〜250℃で接
触させることにより前記不純物を除去するガス精製方法
に関する。Next, the second invention of the present invention is the gas purifying agent containing a rare gas or methane gas containing N 2 , O 2 , CO, CO 2 , H 2 , H 2 O, etc. as impurities, at 150 ° C. to 300 ° C., preferably Relates to a gas purification method for removing the impurities by contacting at 200 ° C to 250 ° C.
次にこのガス精製方法の一実施例について説明する
と、８〜10メッシュのTiスポンジ60gにLiを3g蒸着させ
て得たガス純化剤を250℃の温度に保持し、N2…103ppm,
O2…1.04ppm,CO…10.3ppm,CO2…10.7ppm,H2…9.9ppm,H2
O…3.2ppmの不純物を含むHeガスを接触させ経時により
各不純物の除去率の変化を求めた。Next, an example of this gas purification method will be explained. A gas purifying agent obtained by vapor-depositing 3 g of Li on 60 g of 8-10 mesh Ti sponge was held at a temperature of 250 ° C., and N 2 ... 103 ppm,
O 2 … 1.04ppm, CO… 10.3ppm, CO 2 … 10.7ppm, H 2 … 9.9ppm, H 2
The change of the removal rate of each impurity was obtained by contacting He gas containing O ... 3.2 ppm of impurities with the passage of time.
このときHeガスの流量は2.13Nl/minとし、前記各成分
濃度の測定方法はN2,O2を濃縮ガスクロマトグラフィー
分析法で、CO,CO2をメタン化FIDガスクロマトグラフィ
ー分析法で、H2を四重極ガスクロマトグラフィー質量分
析法で、H2Oを水晶発振式水分計法でそれぞれ行なっ
た。この結果、第２図の如きグラフが得られた。第２図
から明らかなように、H2は導入後２時間を経過した時点
まで100％除去が持続し２時間後88.5％の除去率となり
その後時間の経過と共に除去率は低下して行くが約16時
間に亘って除去作用を保持していた。At this time, the flow rate of He gas was 2.13 Nl / min, and the measuring method of each component concentration was N 2 and O 2 by concentrated gas chromatography analysis method, and CO and CO 2 were methanation FID gas chromatography analysis method, H 2 was measured by quadrupole gas chromatography mass spectrometry, and H 2 O was measured by a crystal oscillation type moisture meter method. As a result, a graph as shown in FIG. 2 was obtained. As is clear from Fig. 2, 100% removal of H 2 continued until 2 hours after introduction, and the removal rate became 88.5% after 2 hours, but the removal rate decreased with the passage of time, but The removal action was maintained for 16 hours.
N2は導入後約10時間まで100％の除去率を持続し、12
時間後では90％の除去率となるが、20時間経てもその除
去作用が保持された。またCOも図の如くN2とほぼ同様に
除去率の変動を示した。更にO2,CO2についても図示され
ている如く前記H2,N2,COより秀れた除去率で除去される
ことを示した。なお、H2Oは良好に除去され22時間経過
後もほとんど検出されず100％除去されていることが認
められた。尚、本ガス純化剤はLiの融点温度以上で使用
してもLiを同伴せずに純化し得ることを該ガス純化剤通
過後の純化ガス中のLi濃度をICP発光分析法により測定
して確認した。N 2 maintains 100% removal rate up to about 10 hours after introduction,
After 90 hours, the removal rate was 90%, but the removal action was maintained even after 20 hours. As shown in the figure, CO also showed variation in removal rate similar to N 2 . Furthermore, it was shown that O 2 and CO 2 were also removed at a removal rate superior to that of H 2 , N 2 and CO as shown in the figure. It was confirmed that H 2 O was satisfactorily removed and was hardly detected even after 22 hours, and was completely removed. It should be noted that this gas purifying agent can be purified without accompanying Li even when used at a melting point temperature of Li or higher by measuring the Li concentration in the purified gas after passing through the gas purifying agent by ICP emission spectrometry. confirmed.
尚、本実施例では、Heガス中の不純物除去の例で説明
したが、He以外の希ガス及びCH4等の場合でも同様の効
果を示し、一般に本ガス純化剤と反応しない任意のガス
中に含まれる前記不純物を除去可能である。In this example, the example of removing impurities in He gas has been described, but the same effect is exhibited in the case of rare gases other than He and CH 4, etc., and in any gas that does not generally react with the gas purifying agent. It is possible to remove the impurities contained in.
また、Liを蒸着させる固型担体としては本実施例のTi
スポンジの如き多孔質物に限定されるものではないが、
多孔質物の方がLiを多量に蒸着でき反応表面積が増加す
るので有利である。更に、具体的な固型担体としは前記
Tiスポンジに限定せず一般にLiと反応せずLiの融点より
高い融点を有する任意の物質、例えば鉄（Fe），鋼（C
u）等の金属またはガラス等のセラミックスを用いても
良いが、入手し易さ、多孔質物である等の点でTiスポン
ジ,Zrスポンジが好ましい。尚、本発明に係るガス純化
剤を使用する温度は任意で良いが、150℃〜300℃の温
度、より望ましくは200℃〜250℃の温度下で被純化ガス
と接触させて該被純化ガス中の不純物を除去することが
好ましい。即ち、本ガス純化剤は150℃以下の使用温度
では不純物除去性能が低いので150℃以上で使用する。
そして使用温度を上昇する程不純物除去性能が上昇し、
200℃〜250℃で良好である。更に300℃で使用すると除
去性能は更に上昇するが、上昇の程度は200℃〜250℃の
使用温度に比べて大差なく、一方、本ガス純化剤を設け
る設備としては使用温度が高くなる程設備の耐熱性，加
熱コストの点で不利なので300℃以下での使用が好まし
い。In addition, as a solid carrier for vapor deposition of Li, Ti of the present embodiment is used.
Although not limited to porous materials such as sponges,
A porous material is advantageous because a large amount of Li can be deposited and the reaction surface area increases. Further, specific solid carriers are as described above.
Not limited to Ti sponge, it generally does not react with Li and has any melting point higher than that of Li, such as iron (Fe), steel (C
Metals such as u) or ceramics such as glass may be used, but Ti sponge and Zr sponge are preferable from the viewpoints of easy availability and being a porous material. The temperature for using the gas purifying agent according to the present invention may be arbitrary, but the temperature of 150 ° C. to 300 ° C., more preferably the temperature of 200 ° C. to 250 ° C. and the gas to be purified are brought into contact with the gas to be purified. It is preferable to remove the impurities therein. That is, since the gas purifier has a low impurity removal performance at a use temperature of 150 ° C or lower, it is used at 150 ° C or higher.
And as the operating temperature rises, the impurity removal performance increases,
Good at 200-250 ℃. When used at 300 ° C, the removal performance is further increased, but the degree of increase is not much different from the operating temperature of 200 ° C to 250 ° C. On the other hand, as the equipment for installing this gas purifier, the higher the operating temperature, the higher the operating temperature. Since it is disadvantageous in terms of heat resistance and heating cost, it is preferable to use it at 300 ° C or lower.
前記した如く、本発明のガス純化剤によれば、Liの金
属塊に比べ反応表面積が大きいので、多量の不純物を除
去でき実施効果が大きい。又N2の如き従来高温下での除
去を要した不純物も150℃〜300℃という比較的低温下で
処理し得るので加熱費用が軽減され経済的である。更に
Liと水との反応を緩慢にして安全で取扱い易くしたこと
によってLiをガス純化剤として実用的に使用し得るよう
にした点で意義があり、新規なガス純化剤を提供するも
のである。As described above, according to the gas purifying agent of the present invention, since the reaction surface area is larger than that of the metallic mass of Li, a large amount of impurities can be removed and the practical effect is large. Further, impurities such as N 2 which have conventionally been required to be removed at a high temperature can be treated at a relatively low temperature of 150 ° C. to 300 ° C., so that heating cost is reduced and it is economical. Further
It is significant in that Li can be practically used as a gas purifier by slowing the reaction between Li and water to make it safe and easy to handle, and it provides a novel gas purifier.
又、本発明のガス精製方法によれば、希ガスまたはメ
タンガスに含有している不純物を容易に取除くことがで
きる。Further, according to the gas purification method of the present invention, impurities contained in the rare gas or methane gas can be easily removed.
第１図は本発明のガス純化剤の製造方法の一例を示す製
造管の縦断面図、第２図は本発明のガス純化剤を用いた
ガス精製方法の不純物除去率を示す図である。 １……筒状容器体、２……多孔板、３……上室、４……
下室、５……上室管、６……下室管FIG. 1 is a longitudinal sectional view of a production pipe showing an example of a method for producing a gas purifying agent of the present invention, and FIG. 2 is a diagram showing an impurity removal rate in a gas purification method using the gas purifying agent of the present invention. 1 ... Cylindrical container, 2 ... Perforated plate, 3 ... Upper chamber, 4 ...
Lower chamber, 5 ... Upper chamber pipe, 6 ... Lower chamber pipe
Claims (4)
にリチウムを蒸着してなることを特徴とするガス純化
剤。1. A gas purifier comprising a solid carrier made of metal or ceramics, and lithium deposited on the solid carrier.
ムの多孔質物であることを特徴とする特許請求の範囲第
１項に記載のガス純化剤。2. The gas purifying agent according to claim 1, wherein the solid carrier is a porous material of titanium or zirconium.
素，水分等を不純物として含有する希ガスまたはメタン
ガスを、金属もしくはセラミックスでなる固型担体にリ
チウムを蒸着してなるガス純化剤に150℃〜300℃、望ま
しくは200℃〜250℃で接触させることにより前記不純物
を除去することを特徴とするガス純化剤を用いたガス精
製方法。3. A gas purifying agent obtained by vapor-depositing a rare gas or methane gas containing nitrogen, oxygen, carbon monoxide, carbon dioxide, hydrogen, water, etc. as impurities on a solid support made of metal or ceramics. A gas purification method using a gas purifying agent, characterized in that the impurities are removed by contacting at 150 ° C to 300 ° C, preferably 200 ° C to 250 ° C.
ムの多孔質物であることを特徴とする特許請求の範囲第
３項に記載のガス純化剤を用いたガス精製方法。4. The gas purification method using a gas purifying agent according to claim 3, wherein the solid carrier is a porous material of titanium or zirconium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283835A JPH08194B2 (en) | 1986-11-28 | 1986-11-28 | Gas purifying agent and gas purification method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61283835A JPH08194B2 (en) | 1986-11-28 | 1986-11-28 | Gas purifying agent and gas purification method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63137749A JPS63137749A (en) | 1988-06-09 |
| JPH08194B2 true JPH08194B2 (en) | 1996-01-10 |
Family
ID=17670774
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61283835A Expired - Lifetime JPH08194B2 (en) | 1986-11-28 | 1986-11-28 | Gas purifying agent and gas purification method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH08194B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6911065B2 (en) * | 2002-12-26 | 2005-06-28 | Matheson Tri-Gas, Inc. | Method and system for supplying high purity fluid |
-
1986
- 1986-11-28 JP JP61283835A patent/JPH08194B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63137749A (en) | 1988-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Miki et al. | Thermodynamics of phosphorus in molten silicon | |
| US4668424A (en) | Low temperature reusable hydrogen getter | |
| US3020128A (en) | Method of preparing materials of high purity | |
| CN110282614A (en) | A kind of system and method being carried out continuously Purification of Carbon Nanotubes | |
| US4302436A (en) | Method of regenerating disproportionated hydrides | |
| JPS623006A (en) | Nitrogen super purification facilities and purification process | |
| Pedersen et al. | The storage of industrially pure hydrogen in magnesium | |
| JPS6364901A (en) | Purifying apparatus for rare gas | |
| EP0004767A1 (en) | Removal of dinitrogen difluoride from atmospheres containing nitrogen trifluoride | |
| EP0484301B1 (en) | Process for the purification of ammonia | |
| JPH08194B2 (en) | Gas purifying agent and gas purification method using the same | |
| JPS60209249A (en) | Purifying agent for industrial gaseous raw material and method for preparation and use thereof | |
| Raj et al. | Zr2FeHx system hydrided at low temperatures: Structural aspects by Mössbauer and X-ray diffraction studies | |
| JP2897958B2 (en) | Amorphous alloy catalyst for exhaust gas purification | |
| JP2001172020A (en) | Method for purifying high-purity tungsten hexafluoride | |
| US5164052A (en) | Process for the purification of anhydrous hydrogen fluoride | |
| US4201739A (en) | Manufacture of metal halide particles | |
| JPS58217654A (en) | Titanium-chromium-vanadium alloy for occluding hydrogen | |
| US4215008A (en) | Rare earth-containing alloys and method for purification of hydrogen gas therewith | |
| US5693306A (en) | Production process for refined hydrogen iodide | |
| EP0446710B1 (en) | The use of an amorphous alloy catalyst for conversion of carbon dioxide | |
| JP2747753B2 (en) | Method and apparatus for removing trace impurity gas components in inert gas | |
| JPH04337045A (en) | Hydrogen storage material | |
| Mimura et al. | Hydrogen plasma arc melting | |
| Garton et al. | The preparation of some 17O-enriched oxides |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
| S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
| R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
| EXPY | Cancellation because of completion of term |