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JPH081810A - Microlens formed by isotropic etching - Google Patents

Microlens formed by isotropic etching

Info

Publication number
JPH081810A
JPH081810A JP17154294A JP17154294A JPH081810A JP H081810 A JPH081810 A JP H081810A JP 17154294 A JP17154294 A JP 17154294A JP 17154294 A JP17154294 A JP 17154294A JP H081810 A JPH081810 A JP H081810A
Authority
JP
Japan
Prior art keywords
isotropic etching
microlens
light
lens
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17154294A
Other languages
Japanese (ja)
Inventor
Koichi Ishida
康一 石田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP17154294A priority Critical patent/JPH081810A/en
Publication of JPH081810A publication Critical patent/JPH081810A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To develope a microlens, simple in manufacturing, profitable in mass production and never have been developed conventionally, by employing thin film forming technique, photo-lithograph and isotropic etching technique. CONSTITUTION:A spherical recess 4, produced by the isotropic etching of a plate 1, is filled with a film 5, made of a substance having a large refractive index of light. whereby the film 5 functions as a lens. The microlens, having a diameter smaller than 1mum, can be formed by a technique employed for the manufacture of a semiconductor integrated circuit.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】光エレクトロニクスの進歩にとも
ない、微小光学系を用いる産業分野が急速に拡大してい
る。微小光学とは数mmから1μm以下の非常に小さな
光学素子、あるいはそれを基礎とした総合技術を言う。
光通信、光情報処理の高速化、大容量化のために微小光
学のさらなる微細化、高集積化が望まれている。そのた
めにはこれまで以上に微小なレンズの開発が必要であ
る。本発明は製造が簡単、大量生産に有利で、かつこれ
までに無く微小なレンズとその応用に関するものであ
る。
[Industrial field of application] With advances in optoelectronics, the field of industry using micro-optical systems is expanding rapidly. Micro optics refers to an extremely small optical element of several mm to 1 μm or less, or a comprehensive technology based on it.
Further miniaturization and higher integration of micro optics are desired for high speed and large capacity of optical communication and optical information processing. For that purpose, it is necessary to develop smaller lenses than ever before. The present invention relates to a lens which is simple to manufacture, is advantageous for mass production, and has a finer lens than ever before, and its application.

【0002】[0002]

【従来の技術】通常、レンズはガラスを、溶融または軟
化して型に入れ成形したり、研削、研磨することにより
製造される。この従来の技術では大きさ1μm以下のレ
ンズを形成することは不可能である。
2. Description of the Related Art Generally, a lens is manufactured by melting or softening glass, molding it into a mold, grinding, and polishing. With this conventional technique, it is impossible to form a lens having a size of 1 μm or less.

【0003】[0003]

【発明が解決しようとする課題】本発明は薄膜形成技
術、フォトリソグラフ、等方性エッチングの技術を用い
て製造が簡単、大量生産に有利で、かつこれまでに無く
微小なレンズを開発しようとするものである。
DISCLOSURE OF THE INVENTION The present invention intends to develop a lens which is simpler to manufacture, advantageous to mass production, and finer than ever before, using thin film forming technology, photolithography and isotropic etching technology. To do.

【0004】[0004]

【課題を解決するための手段】薄膜形成、フォトリソグ
ラフ、等方性エッチングの技術を用いて微小なレンズを
製造する方法を図1を追って説明する。図1の(イ)〜
(ロ)は順に微小レンズの製造工程を表す。また、図1
の(イ)〜(ロ)は全て断面図である。 (イ)光を伝播し光屈折率の小さな物質でできた1板を
用意する。 (ロ)1板の上に、2フォトレジストを塗布する。 (ハ)フォトリソグラフにより2フォトレジストに3孔
を開ける。 (ニ)等方性エッチングを行う。すると1板がエッチン
グされ、4球面状の窪みができる。 (ホ)フォトレジストを除去する。 (ヘ)1板の上に、光を伝播し光屈折率の大きな物質で
できた5膜を形成する。
A method of manufacturing a minute lens using thin film formation, photolithography, and isotropic etching techniques will be described with reference to FIG. 1 (a)-
(B) represents the manufacturing process of a micro lens in order. Also, FIG.
(A) to (b) are all sectional views. (A) Prepare one plate made of a substance that propagates light and has a small optical refractive index. (B) Apply 2 photoresists on 1 plate. (3) 3 holes are formed in 2 photoresists by photolithography. (D) Isotropic etching is performed. Then, one plate is etched, and four spherical spherical depressions are formed. (E) Remove the photoresist. (F) Five films made of a substance that propagates light and has a large optical refractive index are formed on one plate.

【0005】[0005]

【作用】上記の(イ)〜(ヘ)工程を経て、4球面状の
窪みの部分に、光を伝播し光屈折率の大きな物質が満た
され、レンズとして作用する。
After the above steps (a) to (f), the portion of the four-spherical depression is filled with a substance that propagates light and has a large optical refractive index, and acts as a lens.

【0006】[0006]

【実施例1】図1に示す微小レンズの製造工程におい
て、2フォトレジストに開ける3孔を図2に示すように
円筒型にすると、円形の微小レンズができる。
[Embodiment 1] In the manufacturing process of the microlens shown in FIG. 1, if the three holes formed in the two photoresists are made cylindrical as shown in FIG. 2, a circular microlens is formed.

【実施例2】図1に示す微小レンズの製造工程におい
て、2フォトレジストに開ける3孔を図3に示すように
方型にすると、極めて幅の狭い円筒形のレンズ(シリン
ドリカルレンズ)ができる。
[Embodiment 2] In the process of manufacturing the minute lens shown in FIG. 1, if the three holes formed in the two photoresists are formed in a rectangular shape as shown in FIG. 3, a cylindrical lens (cylindrical lens) having an extremely narrow width can be obtained.

【実施例3】1板の材料としてSiO(酸化けい素)
を用い、水で薄めたHFでSiOの等方性エッチング
を行い、5膜としてSi(窒化けい素)を用い
る。SiOの屈折率は約1.5であり、Si
屈折率は約2.0である。従ってこの構成で凸レンズが
できる。
Example 3 SiO 2 (silicon oxide) as a material for one plate
Is used to perform isotropic etching of SiO 2 with HF diluted with water, and Si 3 N 4 (silicon nitride) is used as the 5 film. The refractive index of SiO 2 is about 1.5, and the refractive index of Si 3 N 4 is about 2.0. Therefore, with this structure, a convex lens can be formed.

【実施例4】1板の材料としてSiOを用い、CF
のプラズマエッチングでSiOの等方性エッチングを
行い、5膜としてSi3N4を用いる。
Example 4 SiO 2 was used as a material for one plate, and CF 4
The isotropic etching of SiO 2 is performed by the plasma etching of, and Si 3 N 4 is used as the five films.

【実施例5】1板の材料としてをSi用い、5膜
としてSiOを用いる。SiOの屈折率は約1.5
であり、Siの屈折率は約2.0である。従って
この構成で凹レンズができる。この場合、5膜は付けな
くてもよい。
Fifth Embodiment Si 3 N 4 is used as a material for one plate, and SiO 2 is used as five films. The refractive index of SiO 2 is about 1.5
And the refractive index of Si 2 N 4 is about 2.0. Therefore, with this structure, a concave lens can be formed. In this case, five films may not be attached.

【実施例6】図1の微小レンズ形成の工程において、図
1(ハ)で2フォトレジストに3孔を開けた後、図4に
示すように異方性エッチングで1板に6穴を開ける。そ
の後、図1(ニ)〜(ヘ)の工程を通し、微小レンズを
形成する。すると4球面状の窪みが6穴が無い場合とく
らべて変化する。そして微小レンズの焦点距離を変化さ
せられる。
[Sixth Embodiment] In the step of forming the microlenses of FIG. 1, after three holes are formed in two photoresists in FIG. 1C, six holes are formed in one plate by anisotropic etching as shown in FIG. . Then, the microlenses are formed through the steps of FIGS. Then, the sphere-shaped depression changes as compared with the case where there are no 6 holes. Then, the focal length of the minute lens can be changed.

【実施例7】7半導体基板上に形成した8受光素子の上
に9等方性エッチングにより形成した微小レンズを形成
すると、8受光素子に光が集められ、光を受ける効率が
高まる。
[Embodiment 7] When a microlens formed by 9 isotropic etching is formed on 8 light receiving elements formed on 7 semiconductor substrates, the light is collected by the 8 light receiving elements and the efficiency of receiving light is increased.

【実施例8】7半導体基板上に形成した10発光素子の
上に9等方性エッチングにより形成した微小レンズを形
成すると、10発光素子からの光をひとつの方向に集め
られる。
[Embodiment 8] By forming a microlens formed by 9 isotropic etching on 10 light emitting elements formed on 7 semiconductor substrates, light from 10 light emitting elements can be collected in one direction.

【0007】[0007]

【効果】薄膜形成、フォトリソグラフ、等方性エッチン
グの技術は半導体集積回路の製造に使用されており、完
成度が高く高精度である。2フォトレジストに開ける3
孔は大きさ0.5μmのものが、その大きさも位置も再
現性良く形成できる。従って4球面状の窪みとその部分
にできるレンズは大きさ1μm以下のものが形成でき
る。
[Effect] Thin film formation, photolithography, and isotropic etching techniques are used in the manufacture of semiconductor integrated circuits, and are highly completed and highly accurate. 2 Open in photoresist 3
The hole having a size of 0.5 μm can be formed with good reproducibility in size and position. Therefore, it is possible to form a dent having four spherical surfaces and a lens formed in that portion having a size of 1 μm or less.

【図面の簡単な説明】[Brief description of drawings]

【図1】 (イ)〜(ヘ)は微小レンズの製造工程を表
す断面図である。
1A to 1F are cross-sectional views showing a manufacturing process of a minute lens.

【図2】 本発明の実施例1の製造工程を表す斜視図FIG. 2 is a perspective view showing a manufacturing process according to the first embodiment of the present invention.

【図3】 本発明の実施例2の製造工程を表す斜視図FIG. 3 is a perspective view showing a manufacturing process according to a second embodiment of the present invention.

【図4】 本発明の実施例6の製造工程を表す断面図FIG. 4 is a sectional view showing a manufacturing process of a sixth embodiment of the present invention.

【図5】 本発明の実施例7のを表す断面図FIG. 5 is a cross-sectional view showing Example 7 of the present invention.

【図6】 本発明の実施例8のを表す断面図FIG. 6 is a cross-sectional view showing Example 8 of the present invention.

【符号の説明】[Explanation of symbols]

1 光を伝播し光屈折率の小さな物質でできた板 2 フォトレジスト 3 2フォトレジストに開けた孔 4 1板が等方性エッチングされてできた球面状の窪み 5 光屈折率の大きな物質でできた膜 6 異方性エッチングで1板に開けた穴 7 半導体基板 8 受光素子 9 等方性エッチングにより形成した微小レンズ 10 発光素子 1 A plate made of a substance that propagates light and has a small optical refractive index 2 A photoresist 3 2 A hole made in a photoresist 4 1 A spherical recess formed by isotropic etching of a plate 5 A substance having a large optical refractive index Film formed 6 Holes formed in one plate by anisotropic etching 7 Semiconductor substrate 8 Light receiving element 9 Microlens formed by isotropic etching 10 Light emitting element

Claims (9)

【特許請求の範囲】[Claims] 【請求項1】 等方性エッチングにより形成する微小レ
ンズの製造法
1. A method of manufacturing a microlens formed by isotropic etching.
【請求項2】 等方性エッチングにより形成する微小円
形レンズ
2. A minute circular lens formed by isotropic etching.
【請求項3】 等方性エッチングにより形成する極めて
幅の狭い円筒形レンズ
3. An extremely narrow cylindrical lens formed by isotropic etching.
【請求項4】 水で薄めたHFで等方性エッチングを行
い、微小レンズを形成する方法
4. A method of forming microlenses by performing isotropic etching with HF diluted with water.
【請求項5】 CFのプラズマエッチングで等方性エ
ッチングを行い、微小レンズを形成する方法
5. A method for forming microlenses by performing isotropic etching with CF 4 plasma etching.
【請求項6】 等方性エッチングにより形成する微小凹
レンズ
6. A micro concave lens formed by isotropic etching.
【請求項7】 等方性エッチングを行う前に異方性エッ
チングを行って、等方性エッチングにより形成する微小
レンズの焦点距離を変化させる方法
7. A method of changing the focal length of a microlens formed by isotropic etching by performing anisotropic etching before the isotropic etching.
【請求項8】 等方性エッチングにより形成した微小レ
ンズを上部に形成し受光効率を高めた受光素子
8. A light-receiving element having a microlens formed by isotropic etching formed on the top to enhance light-receiving efficiency.
【請求項9】 等方性エッチングにより形成した微小レ
ンズを上部に形成し光をひとつの方向に集める発光素子
9. A light emitting device in which a microlens formed by isotropic etching is formed on the upper part to collect light in one direction.
JP17154294A 1994-06-20 1994-06-20 Microlens formed by isotropic etching Pending JPH081810A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17154294A JPH081810A (en) 1994-06-20 1994-06-20 Microlens formed by isotropic etching

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17154294A JPH081810A (en) 1994-06-20 1994-06-20 Microlens formed by isotropic etching

Publications (1)

Publication Number Publication Date
JPH081810A true JPH081810A (en) 1996-01-09

Family

ID=15925061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17154294A Pending JPH081810A (en) 1994-06-20 1994-06-20 Microlens formed by isotropic etching

Country Status (1)

Country Link
JP (1) JPH081810A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614598B1 (en) 1998-11-12 2003-09-02 Institute Of Technology, California Microlensing particles and applications
EP1151796A3 (en) * 2000-04-27 2004-03-31 Sony Corporation Immersion lens, optical system incorporating same, method of production of same, and mold for production of same
US6958865B1 (en) * 1998-11-12 2005-10-25 California Institute Of Technology Microlicensing particles and applications
US7042649B2 (en) 2003-08-11 2006-05-09 California Institute Of Technology Microfabricated rubber microscope using soft solid immersion lenses
US7161736B2 (en) 2000-08-16 2007-01-09 California Institute Of Technology Solid immersion lens structures and methods for producing solid immersion lens structures
CN102446774A (en) * 2010-10-01 2012-05-09 住友金属矿山株式会社 Method of manufacturing a base plate for mounting semiconductor elements
CN103560083A (en) * 2013-11-18 2014-02-05 电子科技大学 Stripping process for non-refrigerating infrared FPA detector electrode patterning

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614598B1 (en) 1998-11-12 2003-09-02 Institute Of Technology, California Microlensing particles and applications
US6958865B1 (en) * 1998-11-12 2005-10-25 California Institute Of Technology Microlicensing particles and applications
US7248413B2 (en) 1998-11-12 2007-07-24 California Institute Of Technology Microlensing particles and applications
EP1151796A3 (en) * 2000-04-27 2004-03-31 Sony Corporation Immersion lens, optical system incorporating same, method of production of same, and mold for production of same
US6825995B2 (en) 2000-04-27 2004-11-30 Sony Corporation Optical device, optical system, method of production of same, and mold for production of same
US7161736B2 (en) 2000-08-16 2007-01-09 California Institute Of Technology Solid immersion lens structures and methods for producing solid immersion lens structures
US7042649B2 (en) 2003-08-11 2006-05-09 California Institute Of Technology Microfabricated rubber microscope using soft solid immersion lenses
CN102446774A (en) * 2010-10-01 2012-05-09 住友金属矿山株式会社 Method of manufacturing a base plate for mounting semiconductor elements
CN103560083A (en) * 2013-11-18 2014-02-05 电子科技大学 Stripping process for non-refrigerating infrared FPA detector electrode patterning

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