[go: up one dir, main page]

JPH08180757A - Method of forming contact - Google Patents

Method of forming contact

Info

Publication number
JPH08180757A
JPH08180757A JP31882994A JP31882994A JPH08180757A JP H08180757 A JPH08180757 A JP H08180757A JP 31882994 A JP31882994 A JP 31882994A JP 31882994 A JP31882994 A JP 31882994A JP H08180757 A JPH08180757 A JP H08180757A
Authority
JP
Japan
Prior art keywords
insulating resin
resin layer
hole
plating
bump
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31882994A
Other languages
Japanese (ja)
Inventor
Kazunori So
和範 宗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Priority to JP31882994A priority Critical patent/JPH08180757A/en
Publication of JPH08180757A publication Critical patent/JPH08180757A/en
Pending legal-status Critical Current

Links

Landscapes

  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Manufacture Of Switches (AREA)

Abstract

(57)【要約】 【構成】 絶縁性樹脂層1と導電層2とが積層され、絶
縁性樹脂層1を貫通して導電層2に至る貫通孔3を有す
る積層体4において、絶縁性樹脂層1の表面1aおよび
/または貫通孔3の内面1bに、オゾン処理および/ま
たは紫外線6照射を行う。その後、めっきにより貫通孔
3内に金属物質を充填して、バンプ7などの接点部を形
成する。 【効果】 絶縁性樹脂層1の表面1aおよび/またはめ
っきすべき貫通孔3の内面1bは、めっき液との濡れ性
が向上する。めっき液の不完全な貫通孔内への充填によ
るバンプの未成長および成長不良、さらに絶縁性樹脂層
1の表面1aの貫通孔3近傍に気泡が付着することによ
るバンプ変形などの接点部の欠陥不良が極端に減少する
ので、精密なバンプめっきなどの接点部の形成が行え
る。特に、一製品あたりに多くの接点部を形成する場
合、従来法では問題となっていた低歩留りが改善される
ので、大きな経済効果が得られる。
(57) [Summary] [Structure] In the laminated body 4 in which the insulating resin layer 1 and the conductive layer 2 are laminated, and the through hole 3 penetrating the insulating resin layer 1 to reach the conductive layer 2, The surface 1a of the layer 1 and / or the inner surface 1b of the through hole 3 is subjected to ozone treatment and / or irradiation with ultraviolet rays 6. After that, the through holes 3 are filled with a metal substance by plating to form contact portions such as the bumps 7. [Effect] The wettability of the surface 1 a of the insulating resin layer 1 and / or the inner surface 1 b of the through hole 3 to be plated with the plating solution is improved. Bump ungrowing and defective growth due to incomplete filling of the plating solution into the through holes, and contact defects such as bump deformation due to bubbles adhering to the vicinity of the through holes 3 on the surface 1a of the insulating resin layer 1. Since the number of defects is extremely reduced, it is possible to form contact parts such as precise bump plating. In particular, when a large number of contact portions are formed per product, the low yield, which has been a problem in the conventional method, is improved, so that a large economic effect can be obtained.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、異方導電フィルム、回
路基板、フィルムキャリアなどに用いられる加工フィル
ムに接点部を形成する方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for forming a contact portion on a processed film used for an anisotropic conductive film, a circuit board, a film carrier or the like.

【0002】[0002]

【従来の技術】近年の電子機器の多機能化と小型軽量化
に伴い、半導体分野においては配線回路のパターンが高
集積化され、多ピンおよび狭ピッチのファインパターン
が採用されている。例えば、半導体素子を回路基板に直
接実装したり、フィルムキャリア、異方導電フィルムな
どを介して外部基板上のランド部に実装する試みがなさ
れているが、さらに信頼性の高い電気的接続を得るため
に、上記回路基板、フィルムキャリア、異方導電フィル
ムの接続部位に接点部を形成することが要望されてい
る。
2. Description of the Related Art In recent years, electronic devices have become more multifunctional and smaller and lighter. In the semiconductor field, wiring circuit patterns have been highly integrated and fine patterns with a large number of pins and a narrow pitch have been adopted. For example, it has been attempted to directly mount a semiconductor element on a circuit board or to mount it on a land portion on an external board via a film carrier, an anisotropic conductive film, etc., but to obtain a more reliable electrical connection. Therefore, it is desired to form a contact portion at the connection portion of the circuit board, the film carrier, and the anisotropic conductive film.

【0003】このような要望に応えて、例えば特開平2
−129938号公報には、導電パターンが形成された
絶縁性樹脂フィルムの厚み方向にレーザー光を照射して
微細な貫通孔を形成し、該貫通孔内にめっきなどの手段
によって金属物質を充填し、該金属物質をバンプ状に突
出させてなる接点部(以下、かかる接点部を特に「バン
プ」という。)を有する配線基板の製造方法が開示され
ている。
In response to such a demand, for example, Japanese Unexamined Patent Application Publication No.
JP-A-129938 discloses that a through hole is formed by irradiating a laser beam in a thickness direction of an insulating resin film on which a conductive pattern is formed, and a metal substance is filled in the through hole by means such as plating. There is disclosed a method for manufacturing a wiring board having a contact portion formed by protruding the metal substance in a bump shape (hereinafter, such a contact portion is particularly referred to as a "bump").

【0004】このような微細貫通孔に、バンプをめっき
により成長させる方法は公知である。しかし、絶縁性樹
脂フィルムは有機物で構成されているため、各種めっき
液との濡れ性が悪く、一般に水をはじく性質を持ってい
る。また、貫通孔が微細であるばかりでなく、貫通孔底
部の導電部位は絶縁性樹脂フィルム表面よりも奥深い所
にあるため、めっき時において、めっき液をすべての貫
通孔内に充填させることは難しい。めっき液が完全に貫
通孔内に充填されない場合には、当然バンプが成長しな
いか、あるいはバンプの成長が不良となるので、かかる
バンプ未成長または成長不良の孔を有する製品は不良品
となる。
A method for growing bumps in such fine through holes by plating is known. However, since the insulating resin film is made of an organic substance, it has poor wettability with various plating solutions and generally has a property of repelling water. Further, not only the through holes are fine, but also the conductive portion at the bottom of the through holes is deeper than the surface of the insulating resin film, so it is difficult to fill the plating solution into all the through holes during plating. . If the plating solution is not completely filled in the through holes, the bumps will not grow or the growth of the bumps will be poor. Therefore, a product having such holes with no bump growth or poor growth is a defective product.

【0005】さらに、絶縁性樹脂フィルム表面のめっき
液との濡れ性が悪いと、積層フィルムをめっき液に浸漬
する際に、フィルム表面に気泡が付着しやすくなる。こ
のような気泡は一度付着すると、めっき液の流速を大き
くしても取り除くことができないので、仮にめっき液が
完全に貫通孔内に充填され、バンプが成長したとして
も、気泡の近傍に位置するバンプは気泡を避けて成長す
るので、バンプが変形するなどの欠陥不良を生ずる。
Further, if the wettability of the insulating resin film surface with the plating solution is poor, bubbles are likely to adhere to the film surface when the laminated film is immersed in the plating solution. Once such bubbles are attached, they cannot be removed even if the flow rate of the plating solution is increased, so even if the plating solution is completely filled in the through holes and the bumps grow, they will be located near the bubbles. Since the bump grows while avoiding air bubbles, defective defects such as deformation of the bump occur.

【0006】めっき時におけるバンプ未成長または成長
不良、およびバンプ変形などの接点部の欠陥不良を低減
するために、例えばめっき液に浸漬させる前に、絶縁性
樹脂との濡れ性の良いメタノールを始めとする溶媒に浸
漬させるなどして、貫通孔内に一旦これらの溶媒を流入
させ、その後、貫通孔内部の溶媒を水と置換する方法が
採用されることがある。
[0006] In order to reduce defective or defective growth of bumps such as bump undeformation and contact deformation at the time of plating, for example, methanol which has good wettability with an insulating resin is used before being immersed in a plating solution. A method may be adopted in which these solvents are once allowed to flow into the through-holes, for example, by immersing the solvent in the solvent, and then the solvent inside the through-holes is replaced with water.

【0007】しかしこの方法では、バンプ未成長または
成長不良となる孔の確率は減るが、完全にゼロにするこ
とはできない。また、製造工程が煩雑となり、製造コス
トを上昇させる要因ともなる。特に一製品あたりのバン
プ数が増える状況にある現在、かかる問題は歩留り、製
造コストに大きな影響を与えているので、バンプ未成長
および成長不良、バンプ変形などの接点部の欠陥不良の
発生を極力抑えることが強く要望されている。
However, with this method, the probability of holes in which bumps have not grown or defective growth is reduced, but it cannot be completely eliminated. In addition, the manufacturing process becomes complicated, which also increases the manufacturing cost. Especially in the current situation where the number of bumps per product is increasing, this problem has a large impact on the yield and the manufacturing cost. There is a strong demand for suppression.

【0008】[0008]

【発明が解決しようとする課題】本発明は、上記従来の
欠点を解決するものであり、接点部を形成する際、例え
ばバンプめっきの際、めっき液と絶縁性樹脂との濡れ性
の悪さによるバンプ未成長または成長不良、バンプ変形
などの接点部の欠陥不良をなくし、電気的接続信頼性の
高い異方導電フィルム、回路基板、フィルムキャリアな
どの加工フィルムを得るための、バンプなどの接点部を
形成する方法の提供を目的とする。
SUMMARY OF THE INVENTION The present invention solves the above-mentioned drawbacks of the prior art, and is caused by poor wettability between a plating solution and an insulating resin when forming a contact portion, for example, bump plating. Contact parts such as bumps to eliminate defective defects such as bump undeveloped or poor growth, bump deformation, etc. and obtain processed films such as anisotropic conductive films, circuit boards, film carriers, etc. with high electrical connection reliability The purpose is to provide a method of forming a.

【0009】[0009]

【課題を解決するための手段】そこで、本発明者は、め
っきによりバンプ電極を形成する際に、絶縁性樹脂フィ
ルム表面の濡れ性不足によるバンプの未成長、ならびに
バンプ変形などの欠陥をなくす方法について検討を重ね
た。その結果、オゾン処理および/または紫外線照射の
工程をバンプめっき前に加えることで、バンプ未成長お
よび成長不良、ならびにバンプ変形などの接点部の欠陥
不良を容易に防げることを見いだし、本発明を完成する
に至った。
Therefore, the present inventor has proposed a method of eliminating defects such as bumps not growing due to insufficient wettability of the surface of an insulating resin film and bump deformation when forming bump electrodes by plating. Was repeatedly examined. As a result, it was found that by adding the step of ozone treatment and / or ultraviolet irradiation before bump plating, it is possible to easily prevent defective growth of the bumps and defective growth of the contact portion such as deformation of the bumps, and complete the present invention. Came to do.

【0010】即ち、本発明は、絶縁性樹脂層と導電層と
が積層され、該絶縁性樹脂層を貫通して該導電層に至る
貫通孔を有する積層体において、該絶縁性樹脂層の表面
および/または該貫通孔の内面に、オゾン処理および/
または紫外線照射を行った後、該貫通孔内に金属物質を
充填することを特徴とする接点部の形成方法を提供する
ものである。
That is, according to the present invention, in a laminate having an insulating resin layer and a conductive layer laminated, and having a through hole penetrating the insulating resin layer to reach the conductive layer, the surface of the insulating resin layer is And / or the inner surface of the through hole is treated with ozone and / or
Alternatively, the present invention provides a method for forming a contact portion, which comprises irradiating an ultraviolet ray and then filling the through hole with a metal substance.

【0011】以下、本発明を図面に基づいて説明する。
図1は、本発明の接点部の形成方法による製造工程を示
す、積層体の断面図であり、図1(A)は接点部を形成
する前の積層体の断面図、図1(B)は接点部を形成し
た後の積層体の断面図である。図1(A)においては、
絶縁性樹脂層1と導電層2とが積層され、絶縁性樹脂層
1を厚さ方向に貫通して導電層2に至る貫通孔3が穿設
され、積層体4が形成されている。
The present invention will be described below with reference to the drawings.
FIG. 1 is a cross-sectional view of a laminated body showing a manufacturing process according to the method for forming a contact portion of the present invention, and FIG. 1 (A) is a sectional view of the laminated body before forming the contact portion, and FIG. FIG. 4 is a cross-sectional view of the laminated body after forming the contact portion. In FIG. 1 (A),
The insulating resin layer 1 and the conductive layer 2 are laminated, a through hole 3 penetrating the insulating resin layer 1 in the thickness direction to reach the conductive layer 2 is formed, and a laminated body 4 is formed.

【0012】本発明における絶縁性樹脂層1は、電気絶
縁性を有するものであれば、その材質は特に限定されな
いが、絶縁性と共に可撓性を有するものが好ましく、具
体的にはポリエステル系樹脂、エポキシ系樹脂、ウレタ
ン系樹脂、ポリスチレン系樹脂、ポリエチレン系樹脂、
ポリアミド系樹脂、ポリイミド系樹脂、アクリロニトリ
ル−ブタジエン−スチレン(ABS)共重合体樹脂、ポ
リカーボネート系樹脂、シリコーン系樹脂、フッ素系樹
脂などの熱硬化性樹脂または熱可塑性樹脂が挙げられ、
目的に応じて適宜選択できる。これらの樹脂のうち、優
れた耐熱性、耐薬品性、さらに機械的強度に優れるポリ
イミド系樹脂が特に好適に使用される。
The insulating resin layer 1 in the present invention is not particularly limited in its material as long as it has electrical insulation, but it is preferable that the insulating resin layer 1 has flexibility as well as insulation. , Epoxy resin, urethane resin, polystyrene resin, polyethylene resin,
Thermosetting resins or thermoplastic resins such as polyamide resins, polyimide resins, acrylonitrile-butadiene-styrene (ABS) copolymer resins, polycarbonate resins, silicone resins, fluorine resins, etc.
It can be appropriately selected according to the purpose. Among these resins, a polyimide resin having excellent heat resistance, chemical resistance, and mechanical strength is particularly preferably used.

【0013】また、絶縁性樹脂層1の厚さは任意に選択
できるが、絶縁性樹脂層1の厚み精度(ばらつき)、貫
通孔3の形成性の点からは通常、5〜200μm、好ま
しくは10〜100μmに設定するのがよい。
Although the thickness of the insulating resin layer 1 can be arbitrarily selected, it is usually 5 to 200 μm, preferably the thickness of the insulating resin layer 1 (variation) and the formability of the through holes 3. It is preferable to set it to 10 to 100 μm.

【0014】貫通孔3の形成方法としては、機械的加
工、光加工、化学エッチングなどの方法が挙げられる
が、微細加工性、加工形状の自由度、加工精度などの点
からレーザー加工が好ましい。詳しくは、絶縁性樹脂層
1の表面1aに孔形状、例えば丸、四角、菱形などを有
するマスクを密着させ、マスクの上から処理する間接的
エッチング法、スポットを絞ったレーザー光を絶縁性樹
脂層1の表面1aに照射するか、あるいはマスクを通し
てレーザー光を絶縁性樹脂層1の表面1aに結像させる
ドライエッチング法などを行う。照射するレーザー光と
しては、照射出力の大きな紫外線レーザー光が好まし
く、特にエキシマレーザーの如き紫外線レーザーによる
アブレーションを用いたドライエッチング加工を行った
場合は、高アスペクト比が得られ、微細な加工ができる
ので好ましいものである。
Examples of the method of forming the through holes 3 include mechanical processing, optical processing, chemical etching and the like, but laser processing is preferable from the viewpoints of fine processability, degree of freedom of processing shape, processing accuracy and the like. Specifically, a mask having a hole shape, for example, a circle, a square, or a rhombus is brought into close contact with the surface 1a of the insulating resin layer 1, and an indirect etching method of processing from the top of the mask, a laser beam with a narrowed spot is used as the insulating resin. The surface 1a of the layer 1 is irradiated, or a dry etching method for forming an image of laser light on the surface 1a of the insulating resin layer 1 through a mask is performed. As the laser light to be irradiated, a large irradiation output ultraviolet laser light is preferable, and particularly when dry etching processing using ablation with an ultraviolet laser such as an excimer laser is performed, a high aspect ratio can be obtained and fine processing can be performed. Therefore, it is preferable.

【0015】貫通孔3は、隣合う貫通孔同士がつながら
ない範囲内で、孔径をできる限り大きくし、また、孔間
ピッチをできる限り小さくして、単位面積当たりの貫通
孔の数を増やすことが、導通路としての電気抵抗を小さ
くする上で好ましい。図1(a)に示すように、貫通孔
3の開口部3aの孔径を底部3bよりも大きく設定する
ことにより、貫通孔3の内面1bへの紫外線照射が容易
となるので好ましく、貫通孔3の開口部3aの孔径は、
5〜200μm、好ましくは8〜50μm程度がよく、
貫通孔3の底部3bの孔径は、3〜190μm、好まし
くは5〜45μm程度がよい。
In the through holes 3, the diameter of the through holes 3 is made as large as possible and the pitch between the holes is made as small as possible within a range in which adjacent through holes are not connected to each other, thereby increasing the number of through holes per unit area. It is preferable to reduce the electric resistance of the conductive path. As shown in FIG. 1 (a), it is preferable to set the diameter of the opening 3 a of the through hole 3 to be larger than that of the bottom 3 b, because it becomes easier to irradiate the inner surface 1 b of the through hole 3 with ultraviolet rays. The hole diameter of the opening 3a of
5 to 200 μm, preferably about 8 to 50 μm,
The hole diameter of the bottom portion 3b of the through hole 3 is 3 to 190 μm, preferably about 5 to 45 μm.

【0016】導電層2は、後述するような製造工程での
電気めっきにおいて電極(陰極)となるように導電性を
有するものであれば特に限定されず、例えば金、銀、
銅、白金、鉛、錫、ニッケル、鉄、コバルト、インジウ
ム、ロジウム、クロム、タングステン、ルテニウムなど
の単独金属、またはこれらを成分とする各種合金、例え
ば、半田、ニッケル−錫、金−コバルトなどが挙げられ
る。また、導電層2は、必ずしも単層である必要はな
く、上記各金属の層が二層以上積層された積層構造にす
ることも可能である。
The conductive layer 2 is not particularly limited as long as it has conductivity so as to become an electrode (cathode) in electroplating in a manufacturing process described later, and for example, gold, silver,
Single metals such as copper, platinum, lead, tin, nickel, iron, cobalt, indium, rhodium, chromium, tungsten, and ruthenium, or various alloys containing these, for example, solder, nickel-tin, gold-cobalt, etc. Can be mentioned. Further, the conductive layer 2 does not necessarily have to be a single layer, and may have a laminated structure in which two or more layers of each metal described above are laminated.

【0017】導電層2の厚みは特に限定されないが、1
〜200μm、好ましくは5〜80μmに設定するのが
よい。導電層2は、通常、回路パターンが形成され、導
電性回路の形成方法としては、絶縁性樹脂層1の他方面
1cに目的の回路パターンを直接描画、形成する方法
(アディティブ法)、目的の回路パターンを残すように
導電層2の他の部分を除去して形成する方法(サブトラ
クティブ法)が挙げられる。
The thickness of the conductive layer 2 is not particularly limited, but 1
˜200 μm, preferably 5 to 80 μm. A circuit pattern is usually formed on the conductive layer 2. As a method of forming a conductive circuit, a method of directly drawing and forming a target circuit pattern on the other surface 1c of the insulating resin layer 1 (additive method), There is a method (subtractive method) of removing the other part of the conductive layer 2 so as to leave the circuit pattern.

【0018】前者の方法としては、スパッタリング、各
種蒸着、各種メッキなどの成膜方法を用いた回路パター
ンの描画が挙げられる。また、後者の方法としては、絶
縁性樹脂層1の他方面1c側に導電層2を積層し、導電
層2の表面2aに目的の回路パターン形状だけを被覆す
るようにレジスト層5を形成した後、露出している導電
層2をエッチングして、所望の回路パターンを得る方法
が挙げられる。
Examples of the former method include drawing a circuit pattern using a film forming method such as sputtering, various vapor depositions, various platings, and the like. As the latter method, the conductive layer 2 is laminated on the other surface 1c side of the insulating resin layer 1, and the resist layer 5 is formed on the surface 2a of the conductive layer 2 so as to cover only the desired circuit pattern shape. Then, the exposed conductive layer 2 may be etched to obtain a desired circuit pattern.

【0019】めっきにより接点部を形成する前に、導電
層2の表面2aを絶縁化する必要があるので、図1
(A)に示すように、絶縁保護としてレジスト層5を設
ける。レジスト層5の材料は絶縁化できるものならば特
に限定はない。
Since it is necessary to insulate the surface 2a of the conductive layer 2 before forming the contact portion by plating,
As shown in (A), a resist layer 5 is provided as insulation protection. The material of the resist layer 5 is not particularly limited as long as it can be insulated.

【0020】次に、オゾン処理および/または紫外線照
射による絶縁性樹脂層1の表面1aおよび/または貫通
孔3の内面1bの改質について説明する。
Next, modification of the surface 1a of the insulating resin layer 1 and / or the inner surface 1b of the through hole 3 by ozone treatment and / or ultraviolet irradiation will be described.

【0021】紫外線は電磁波の一種であり、その波長は
可視光よりも短く、通常100〜400nmの波長領域
にあるものが紫外線と呼ばれている。また、光のエネル
ギーはその波長によって決まり、波長が短いほどエネル
ギーが高い。電磁波が物質に作用を及ぼすためには、反
応を引き起こすのに十分な強さのエネルギーが必要であ
る。紫外線のもつエネルギーは、赤外線および可視光よ
りもかなり高い。有機化合物の結合エネルギーは、紫外
線のエネルギーに近く、特に短波長領域の紫外線は多く
の有機化合物のものより高い。このことが紫外線が多く
の物質と様々な反応のできる一番の原因である。
Ultraviolet rays are a type of electromagnetic wave, and the wavelength thereof is shorter than that of visible light, and those having a wavelength range of 100 to 400 nm are called ultraviolet rays. The energy of light depends on its wavelength, and the shorter the wavelength, the higher the energy. In order for an electromagnetic wave to act on a substance, enough energy is required to cause a reaction. The energy of ultraviolet light is much higher than that of infrared light and visible light. The binding energy of organic compounds is close to that of ultraviolet rays, and ultraviolet rays in the short wavelength region are higher than those of many organic compounds. This is the reason why ultraviolet rays can react with many substances in various ways.

【0022】絶縁性樹脂などの有機材料は紫外線を照射
されると、表面から数ミクロン深さまでの範囲で、ポリ
マーの結合が切断される。切断部位では水素原子の引き
抜き、それに続く酸素原子の導入などにより、カルボニ
ル基、カルボキシル基、水酸基などの極性の高い官能基
が形成され、その結果、表面エネルギーが大きくなり、
水の接触角が低下して、濡れ性が向上する。
When an organic material such as an insulating resin is irradiated with ultraviolet rays, polymer bonds are broken within a range of a depth of several microns from the surface. At the cleavage site, by extracting a hydrogen atom and then introducing an oxygen atom, a highly polar functional group such as a carbonyl group, a carboxyl group, and a hydroxyl group is formed, and as a result, the surface energy increases,
The contact angle of water is reduced and the wettability is improved.

【0023】紫外線の光源としては多くの種類のものが
あるが、有機物と反応するのに有効な短波長紫外線を効
率よく放射し、寿命も長く実用的なものとして、低圧水
銀ランプが好ましい。水銀ランプが放射する代表的な紫
外線波長は、365nm、254nm、185nmであ
るが、低圧水銀ランプは254nm線と185nm線を
最も効率よく放射するランプである。本発明において
は、185nm線および/または254nm線の紫外線
を放射するランプであれば、低圧水銀ランプに限らず、
好適に使用できる。
Although there are many kinds of ultraviolet light sources, a low-pressure mercury lamp is preferable because it efficiently emits short-wavelength ultraviolet light effective for reacting with organic substances and has a long life and is practical. Typical ultraviolet wavelengths emitted by a mercury lamp are 365 nm, 254 nm and 185 nm, but a low-pressure mercury lamp is a lamp that emits the 254 nm line and the 185 nm line most efficiently. In the present invention, as long as the lamp emits ultraviolet rays of 185 nm line and / or 254 nm line, it is not limited to the low pressure mercury lamp,
It can be preferably used.

【0024】185nm線は酸素分子を分解して、下記
式、に示すように、オゾンを生成することができ
る。しかしオゾンには260nm近辺に強力な吸収バン
ドがあり、そのためオゾンは254nm線により分解さ
れ、速やかに活性酸素原子を放出する(式)。
The 185 nm line can decompose oxygen molecules to generate ozone as shown in the following formula. However, ozone has a strong absorption band in the vicinity of 260 nm, so that ozone is decomposed by the 254 nm line and rapidly releases active oxygen atoms (equation).

【0025】 O2 + hν(185nm) → O + O O2 + O → O3 3 + hν(254nm) → O2 + O O 2 + hν (185 nm) → O + O O 2 + O → O 3 O 3 + hν (254 nm) → O 2 + O

【0026】このオゾンから分解発生した活性酸素原子
は、強力な酸化力を持っており、例えば紫外線照射など
によって生成した有機化合物のフリーラジカルまたは励
起状態の分子と反応して、CO2 やH2 Oのような揮発
性物質、あるいはカルボニル基、カルボキシル基、水酸
基などの極性の高い官能基を持った化合物を生成する。
有機物の分解、除去量はオゾン濃度および紫外線露光量
に依存するので、紫外線照射またはオゾン処理を単独で
行うよりも、両者の併用が特に好ましい。
The active oxygen atom decomposed and generated from ozone has a strong oxidizing power, and reacts with a free radical or an excited state molecule of an organic compound produced by, for example, irradiation with ultraviolet rays to produce CO 2 or H 2 It produces a volatile substance such as O or a compound having a highly polar functional group such as a carbonyl group, a carboxyl group, and a hydroxyl group.
Since the amount of organic matter decomposed and removed depends on the ozone concentration and the amount of exposure to ultraviolet rays, it is particularly preferable to use both of them together rather than to perform ultraviolet irradiation or ozone treatment alone.

【0027】オゾン濃度については、絶縁性樹脂層1の
表面1aおよび/または貫通孔3の内面1bの濡れ性改
善を目的とした場合、低圧水銀ランプなどから放射され
た紫外線により生成されたオゾンの濃度程度でも可能で
あり、オゾン発生器などを用いてさらにオゾンを発生さ
せてオゾン濃度を高めることは必ずしも必要でない。こ
の場合の具体的なオゾン濃度は、通常は100〜100
0ppm、好ましくは200〜600ppm、より好ま
しくは400〜500ppmの範囲内に設定するのがよ
い。オゾン濃度が100ppm未満であると効果は不十
分であり、一方、1000ppmを越えて設定しても、
すでに接触角の低下の限度に達しており不経済である。
Regarding the ozone concentration, for the purpose of improving the wettability of the surface 1a of the insulating resin layer 1 and / or the inner surface 1b of the through holes 3, the ozone concentration of ozone generated by ultraviolet rays emitted from a low pressure mercury lamp or the like is used. It is possible to increase the ozone concentration by using an ozone generator or the like to further increase the ozone concentration. The specific ozone concentration in this case is usually 100 to 100.
It is preferable to set it in the range of 0 ppm, preferably 200 to 600 ppm, and more preferably 400 to 500 ppm. If the ozone concentration is less than 100 ppm, the effect is insufficient, while if it exceeds 1000 ppm,
It is uneconomical because the contact angle has already reached the limit of decrease.

【0028】しかし、ドライデスミアのように、レーザ
ー加工などにより貫通孔3の開口部3aおよび底部3b
に付着した分解物のエッチング除去量が多いような場合
には、酸素ガスを原料にしてオゾンを発生させるオゾン
発生器を用いて、オゾン濃度を高める必要がある。この
場合の具体的なオゾン濃度は、通常は2000〜100
00ppm、好ましくは3000〜6000ppm、よ
り好ましくは4500〜5500ppmの範囲内に設定
する。オゾン濃度が2000ppm未満であると、分解
物量の減少は認められるが、完全に除去することはでき
ず、一方、10000ppmを越えて設定しても、すで
に分解物は完全に除去されており不経済である。
However, like dry desmear, the opening 3a and the bottom 3b of the through hole 3 are formed by laser processing or the like.
When there is a large amount of the decomposed product adhering to and removed by etching, it is necessary to increase the ozone concentration by using an ozone generator that generates ozone using oxygen gas as a raw material. The specific ozone concentration in this case is usually 2000 to 100.
The concentration is set to 00 ppm, preferably 3000 to 6000 ppm, and more preferably 4500 to 5500 ppm. If the ozone concentration is less than 2000 ppm, a decrease in the amount of decomposition products is observed, but it cannot be completely removed. On the other hand, even if the ozone concentration exceeds 10000 ppm, the decomposition products have already been completely removed, which is uneconomical. Is.

【0029】また、雰囲気温度は、絶縁性樹脂層1の表
面1aなどの濡れ性改善を目的とした場合、通常は室温
以上、好ましくは15〜45℃、より好ましくは20〜
30℃に設定し、付着分解物のエッチング除去を目的と
した場合では、通常70〜170℃、好ましくは90〜
150℃、より好ましくは100〜120℃に設定す
る。
For the purpose of improving the wettability of the surface 1a of the insulating resin layer 1, the ambient temperature is usually room temperature or higher, preferably 15 to 45 ° C., more preferably 20 to.
When the temperature is set to 30 ° C. and the purpose is to remove adhered decomposed substances by etching, it is usually 70 to 170 ° C., preferably 90 to
The temperature is set to 150 ° C, more preferably 100 to 120 ° C.

【0030】本発明は、このオゾン処理および/または
紫外線照射による有機物質の改質作用を、めっき液によ
る接点部の形成の前処理に応用したものである。従来の
液体による改質とは異なり、作用物質の活性酸素は気体
であり、一方の紫外線は光であるので、絶縁性樹脂層1
に穿設された、いかなる微細な貫通孔に対しても、濡れ
性改善、およびレーザー加工などによる分解物の除去に
効果があるものである。
The present invention applies the modifying action of the organic substance by the ozone treatment and / or the ultraviolet irradiation to the pretreatment for forming the contact portion with the plating solution. Unlike the conventional modification with a liquid, the active oxygen of the active substance is a gas, and the ultraviolet rays on the other hand are light, so that the insulating resin layer 1
It is effective for improving the wettability and removing the decomposed products by laser processing or the like with respect to any fine through-holes formed in the.

【0031】次に、めっき液による接点部の形成方法に
ついて説明する。レジスト保護を行った積層体4の絶縁
性樹脂層1の表面1aに、1〜5mW/cm2 、好まし
くは2〜3mW/cm2 の強度で紫外線6を照射する。
照射時間は通常5〜30分間、好ましくは10〜20分
間とする。但し、付着分解物のエッチング除去を目的と
した場合、紫外線6の強度は通常20〜80mW/cm
2 、好ましくは30〜70mW/cm2 、より好ましく
は40〜50mW/cm2 とし、照射時間は通常5〜3
0分間、好ましくは10〜20分間とする。
Next, a method of forming a contact portion with a plating solution will be described. The surface 1a of the insulative resin layer 1 of the laminate 4 which has been protected by the resist is irradiated with ultraviolet rays 6 at an intensity of 1 to 5 mW / cm 2 , preferably 2 to 3 mW / cm 2 .
The irradiation time is usually 5 to 30 minutes, preferably 10 to 20 minutes. However, when the purpose is to remove adhered decomposition products by etching, the intensity of the ultraviolet rays 6 is usually 20 to 80 mW / cm.
2 , preferably 30 to 70 mW / cm 2 , more preferably 40 to 50 mW / cm 2 , and the irradiation time is usually 5 to 3
It is set to 0 minutes, preferably 10 to 20 minutes.

【0032】濡れ性を向上させる程度の改質処理程度で
あれば、オゾン濃度は1000ppm以下の範囲に設定
すれば十分であるので、特にオゾナイザーは必要とせ
ず、紫外線照射によって自然発生するオゾンを利用する
ことになる。このオゾン濃度が100ppm以上になる
ためには、装置による差はあるが、ランプ点灯後およそ
5分を要する。
Since it is sufficient to set the ozone concentration in the range of 1000 ppm or less as long as it is a modification treatment for improving the wettability, an ozonizer is not particularly required, and ozone naturally generated by ultraviolet irradiation is used. Will be done. It takes about 5 minutes after the lamp is turned on for the ozone concentration to reach 100 ppm or more, although there is a difference depending on the device.

【0033】照射後、絶縁性樹脂層1の表面1aの接触
角は下がっているが、放置時間が長ければ接触角は徐々
に戻ってしまうので、できる限り早くめっきを行うこと
が好ましい。
After irradiation, the contact angle of the surface 1a of the insulating resin layer 1 decreases, but the contact angle gradually returns if the standing time is long, so it is preferable to perform plating as soon as possible.

【0034】めっき液の材料としては、導電性を有する
金属であれば特に限定されず、導電層2と同じ材質が挙
げられ、本発明においては様々な金属のめっきを活用で
きる。電気めっきにおいては、導電層2を電極に接続
し、積層体4をめっき浴に浸漬して、導電層2を陰極と
して通電する。この際の電流密度は、めっきする金属に
より異なるが、例えばニッケルをめっきする場合には、
3〜8A/dm2 に設定する。通電により貫通孔3内に
金属物質が充填され、接点部が形成される。
The material of the plating solution is not particularly limited as long as it is a conductive metal, and the same material as that of the conductive layer 2 can be used. In the present invention, various metal plating can be used. In electroplating, the conductive layer 2 is connected to an electrode, the laminate 4 is immersed in a plating bath, and the conductive layer 2 is used as a cathode to conduct electricity. The current density at this time varies depending on the metal to be plated, but when plating nickel, for example,
Set to 3 to 8 A / dm 2 . By energizing, the through hole 3 is filled with a metal substance to form a contact portion.

【0035】本発明において接点部は、電気的な接触、
接続を意図して絶縁性樹脂層1の表面1aに設けられる
導体部分である。接点部全体としての態様は、絶縁性樹
脂層1の表面1aからの突出の有無を問わず、また、接
点部の接触面の形状は、接触対象の部材の突起状態に応
じて、凸状、平面状、凹状のいずれであってもよい。従
って、絶縁性樹脂層1の表面1aに対する垂直面・平行
面で切断したときの接点部の断面形状は限定されるもの
ではなく、全ての多角形、円形、楕円形、これら各形状
の一部分や複合形などが挙げられ、これら断面形状の組
み合わせによって、接点部の形状は、多角柱・円柱の端
部または側面、円錐(台)、角錐(台)、球体の一部な
ど、あらゆる立体的形状が可能となる。しかし、接点部
は、図1(B)に示すように、マッシュルーム形状(バ
ンプ状)のバンプ7とするのが、電気的信頼性の点から
好ましいものである。バンプ7の高さは目的、使用に応
じて自由に設定できる。
In the present invention, the contact portion is an electrical contact,
It is a conductor portion provided on the surface 1a of the insulating resin layer 1 for the purpose of connection. The aspect of the contact portion as a whole does not matter whether or not there is a protrusion from the surface 1a of the insulating resin layer 1, and the shape of the contact surface of the contact portion is a convex shape depending on the protruding state of the member to be contacted, It may be flat or concave. Therefore, the cross-sectional shape of the contact portion when cut in a plane parallel to the surface 1a of the insulating resin layer 1 is not limited, and all polygons, circles, ellipses, a part of each of these shapes, The shape of the contact point can be any three-dimensional shape such as the end or side of a polygonal column or a cylinder, a cone (stand), a pyramid (stand), or a part of a sphere, depending on the combination of these cross-sectional shapes. Is possible. However, as shown in FIG. 1B, it is preferable that the contact portion is a mushroom-shaped (bump-shaped) bump 7 from the viewpoint of electrical reliability. The height of the bump 7 can be freely set according to the purpose and use.

【0036】なお、導電層2の表面2aを絶縁化するた
めのレジスト層5を形成するには、通常、乾燥処理工程
を必要とするので、貫通孔3の底部3bにおける導電層
2の露出面2bが酸化される。導電層2の露出面2bに
酸化膜が形成されると、通電が不良となるので、バンプ
未成長または成長不良となる。従って、めっき直前に酸
化膜除去を目的とした前処理を行う必要がある。酸化膜
を除去するための前処理剤としては、酸化膜を除去でき
るものであれば特に限定はなく、例えは酸化銅の除去で
あれば、ソフトエッチング剤〔荏原ユージライト社製、
PB−228(100g/L)/硫酸(10mL/L)
の混液〕が好適に使用される。酸化膜の除去に際して
は、超音波振動を併用することが好ましく、積層体4を
1〜3分間浸漬処理し、貫通孔3の底部3bにおける導
電層2の露出面2bを活性化させる。
Since the drying process is usually required to form the resist layer 5 for insulating the surface 2a of the conductive layer 2, the exposed surface of the conductive layer 2 at the bottom 3b of the through hole 3 is required. 2b is oxidized. When the oxide film is formed on the exposed surface 2b of the conductive layer 2, the current flow becomes poor, resulting in bump non-growth or poor growth. Therefore, it is necessary to perform a pretreatment for the purpose of removing the oxide film immediately before plating. The pretreatment agent for removing the oxide film is not particularly limited as long as it can remove the oxide film, for example, if the removal of copper oxide, a soft etching agent [Ebara Eugelite Co.,
PB-228 (100 g / L) / sulfuric acid (10 mL / L)
Is preferably used. When removing the oxide film, ultrasonic vibration is preferably used together, and the laminate 4 is immersed for 1 to 3 minutes to activate the exposed surface 2b of the conductive layer 2 at the bottom 3b of the through hole 3.

【0037】最後に、絶縁保護としてのレジスト層5を
導電層2から剥離して、接点部としてのバンプ7が形成
された積層体4を得る。
Finally, the resist layer 5 for insulation protection is peeled off from the conductive layer 2 to obtain the laminated body 4 having the bumps 7 as contact portions.

【0038】[0038]

【作用】本発明の接点部の形成方法によれば、絶縁性樹
脂層の表面および/または絶縁性樹脂層に穿設された貫
通孔の内面に、オゾン処理および/または紫外線照射を
行うので、絶縁性樹脂層の表面および/またはめっきす
べき貫通孔の内面は、めっき液との濡れ性が向上する。
従って、めっき液が完全に貫通孔内に充填されないこと
によるバンプの未成長、めっき液の貫通孔内への不十分
な充填によるバンプの成長不良、さらにめっきの際に気
泡が絶縁性樹脂層の表面の貫通孔近傍に付着することに
よるバンプ変形などの接点部の欠陥不良が解消されるの
で、歩留まりが大きく改善されるものである。
According to the method of forming a contact portion of the present invention, the surface of the insulating resin layer and / or the inner surface of the through hole formed in the insulating resin layer is subjected to ozone treatment and / or ultraviolet irradiation. The surface of the insulating resin layer and / or the inner surface of the through hole to be plated has improved wettability with the plating solution.
Therefore, the bumps do not grow because the plating solution is not completely filled in the through holes, the bumps do not grow well due to insufficient filling of the plating solution into the through holes, and bubbles during the plating process may cause bubbles in the insulating resin layer. The defect defect of the contact portion such as the bump deformation due to the adhesion to the vicinity of the through hole on the surface is eliminated, so that the yield is greatly improved.

【0039】[0039]

【実施例】以下、実施例および比較例をもって本発明を
詳細に述べるが、本発明はこれらによって何ら限定され
るものではない。
The present invention will be described in detail below with reference to Examples and Comparative Examples, but the present invention is not limited thereto.

【0040】〔実施例1〕絶縁性樹脂層であるポリイミ
ドフィルム(26μm厚)の片面に、導電層であり、銅
箔からなる銅層(35μm厚)を形成して、積層体であ
る二層フィルムを作成した。ポリイミドフィルムの表面
に、遮蔽マスクを通して、発振波長248nmのKrF
エキシマレーザー光を照射してドライエッチングを施
し、ポリイミドフィルムのみに30μmφの微細貫通孔
を9900個穿設した。
[Example 1] A two-layer laminated body in which a copper layer (35 µm thick) made of a copper foil, which is a conductive layer, is formed on one surface of a polyimide film (26 µm thick) which is an insulating resin layer. I made a film. KrF with an oscillation wavelength of 248 nm is passed through the shielding mask on the surface of the polyimide film.
Dry etching was performed by irradiating an excimer laser beam, and 9900 fine through holes having a diameter of 30 μm were formed only in the polyimide film.

【0041】この貫通孔の開口部周辺および底部には黒
色のポリイミド分解物が付着していた。この分解物はカ
ーボンを主成分とするものであり、めっき時に導電体と
して作用するので、電解めっき、特にバンプを形成する
場合、この分解物を完全に除去しなければ、直接バンプ
形状不良につながる。一般にこれらの分解物除去法とし
て、過マンガン酸カリウムを用いたウェットデスミア法
が知られているが、本実施例のように孔が微細である場
合、液回りの影響を受け易く、すべての孔の付着分解物
を一様に除去するのが難しい。
A black polyimide decomposed product was attached to the periphery of the opening and the bottom of the through hole. This decomposed product contains carbon as a main component and acts as a conductor during plating. Therefore, when electrolytic plating, especially when forming bumps, unless the decomposed product is completely removed, it directly leads to defective bump shape. . Generally, as a method for removing these decomposed products, a wet desmear method using potassium permanganate is known. However, when the pores are fine as in this example, all the pores are easily affected by the liquid flow. It is difficult to uniformly remove the attached decomposition products of.

【0042】そこで本発明方法の応用として、紫外線と
オゾンを利用したドライデスミアを行ったところ、付着
していたポリイミド分解物質が除去できた。詳しくは高
出力型遠紫外線応用装置(日本電池社製、光表面改質装
置DUV150−1)を用いて、二層フィルムのポリイ
ミド表面に約40mW/cm2 の強度で20分間紫外線
を照射した。このときの雰囲気のオゾン濃度は約400
0ppmであり、雰囲気温度は100℃であった。な
お、ドライデスミアの条件に関しては、温度が室温の場
合、オゾン濃度が2000ppm未満の場合、または照
射時間が10分未満の場合、いずれも分解物量の減少は
認められるが、完全に除去することはできなかった。
Then, as an application of the method of the present invention, dry desmear using ultraviolet rays and ozone was performed, and the attached polyimide decomposed substance could be removed. Specifically, using a high-power type deep UV application device (manufactured by Nippon Battery Co., Ltd., photo surface modification device DUV150-1), the polyimide surface of the two-layer film was irradiated with UV light at an intensity of about 40 mW / cm 2 for 20 minutes. At this time, the ozone concentration in the atmosphere is about 400.
It was 0 ppm and the ambient temperature was 100 ° C. Regarding the dry desmear conditions, when the temperature is room temperature, the ozone concentration is less than 2000 ppm, or the irradiation time is less than 10 minutes, a decrease in the amount of decomposed products is observed, but it cannot be completely removed. could not.

【0043】処理後、貫通孔の形状を観察したところ、
ポリイミド表面における貫通孔の開口部での孔径は30
μmφ、ポリイミドと銅層との界面(貫通孔の底部)で
の径は20μmφ、孔の深さは26μmであった。ポリ
イミド表面における水との接触角は、処理前が74°で
あったのに対し、処理後では26°であった。
After the treatment, when the shape of the through hole was observed,
The diameter of the through hole on the surface of the polyimide is 30.
μmφ, the diameter at the interface between the polyimide and the copper layer (bottom of the through hole) was 20 μmφ, and the depth of the hole was 26 μm. The contact angle with water on the surface of the polyimide was 74 ° before the treatment and 26 ° after the treatment.

【0044】このようにして得られた二層フィルムの銅
層表面に塩化ビニル系のインクレジストを塗工し、15
0℃、30分間で硬化させて絶縁化した。加熱乾燥後の
接触角は65℃に上がっていた。
A vinyl chloride-based ink resist was applied to the surface of the copper layer of the two-layer film thus obtained,
It was cured at 0 ° C. for 30 minutes for insulation. The contact angle after heating and drying had risen to 65 ° C.

【0045】次に、紫外線−オゾン洗浄機(日本電池社
製、ポータブル型光表面改質装置DUV−25×4A)
を用いて、二層フィルムのポリイミド表面に、185n
mおよび254nmの紫外線を10分間照射し、オゾン
雰囲気下とした。このときのオゾン濃度は約500pp
mであった。
Next, an ultraviolet-ozone cleaning machine (manufactured by Nippon Battery Co., Ltd., portable type optical surface modification device DUV-25 × 4A)
185n on the polyimide surface of the two-layer film using
m and 254 nm ultraviolet rays were radiated for 10 minutes to make an ozone atmosphere. The ozone concentration at this time is about 500 pp
It was m.

【0046】処理後の水との接触角は28°に下がって
いた。この接触角が低いほど水との濡れ性が良く、その
結果、バンプ未成長および成長不良、ならびにバンプ変
形が減少するが、この濡れ性を維持できる時間は限られ
ており、空気雰囲気下24時間後では接触角は48℃に
まで上がる。従って、紫外線照射後、できる限り早くバ
ンプめっきを行うことにより、本発明が奏する効果を最
大限に活用できることになる。本実施例では紫外線照射
後からめっきまでの放置時間は30分とした。
The contact angle with water after the treatment was lowered to 28 °. The lower the contact angle, the better the wettability with water, and as a result, the bump ungrowing and the growth failure and the bump deformation decrease, but the wettability can be maintained for a limited period of time in an air atmosphere for 24 hours. After that the contact angle rises to 48 ° C. Therefore, by performing bump plating as soon as possible after the irradiation of ultraviolet rays, the effects of the present invention can be fully utilized. In the present example, the standing time from the irradiation of ultraviolet rays to the plating was 30 minutes.

【0047】なお、先に述べたインクレジストの乾燥工
程のために、貫通孔底部の銅表面が酸化されているの
で、めっき直前に銅の酸化膜除去を目的とした前処理を
行った。前処理剤は酸化銅を除去できるものであれば、
特に限定はないが、本実施例ではソフトエッチング剤
〔荏原ユージライト社製、PB−228(100g/
L)/硫酸(10mL/L)の混液〕を用い、超音波振
動を併用しながら二層フィルムを1分間浸漬処理し、貫
通孔底部の露出した銅層を活性化させた。
Since the copper surface at the bottom of the through hole was oxidized due to the above-described ink resist drying step, a pretreatment for removing the copper oxide film was performed immediately before plating. If the pretreatment agent can remove copper oxide,
Although not particularly limited, in the present embodiment, a soft etching agent [PB-228 (manufactured by Ebara-Udylite Co., 100 g /
L) / sulfuric acid (10 mL / L) mixed solution], the two-layer film was immersed for 1 minute while also using ultrasonic vibration to activate the exposed copper layer at the bottom of the through hole.

【0048】これを純水洗浄した後、銅層を電極に接続
して60℃のニッケル浴に浸漬し、銅層をマイナス極と
して、貫通孔内にニッケルめっきを成長させた。電流密
度は5A/dm2 に設定し、ニッケルがポリイミドフィ
ルム表面から20μm突出したときに、めっき処理を終
了した。
After washing this with pure water, the copper layer was connected to an electrode and immersed in a nickel bath at 60 ° C., and the copper layer was used as a negative electrode to grow nickel plating in the through hole. The current density was set to 5 A / dm 2 , and the plating treatment was terminated when nickel was projected from the polyimide film surface by 20 μm.

【0049】最後に、塗工したレジスト層を剥離して、
ニッケルバンプ付きの二層フィルムを得た。この二層フ
ィルムのバンプすべてを顕微鏡観察したところ、バンプ
抜けまたはバンプ欠陥不良は一つもなかった。
Finally, the coated resist layer is peeled off,
A two-layer film with nickel bumps was obtained. When all the bumps of this two-layer film were observed with a microscope, there was no bump missing or bump defect defect.

【0050】〔比較例1〕実施例1における、バンプめ
っき直前のオゾン雰囲気下での紫外線照射を省く以外
は、実施例1と同様にして操作を行った。その結果、9
900個の孔のうち、84個の孔にはバンプが成長して
いなかった。
Comparative Example 1 The same operation as in Example 1 was carried out except that the ultraviolet irradiation in the ozone atmosphere immediately before bump plating in Example 1 was omitted. As a result, 9
Bumps did not grow in 84 of the 900 holes.

【0051】〔比較例2〕実施例1における、バンプめ
っき直前のオゾン雰囲気下での紫外線照射を省き、代わ
りに従来のメタノール置換法を用いた以外は、実施例1
と同様にして操作を行った。その結果、9900個の孔
のうち、3個の孔にはバンプが成長していなかった。
Comparative Example 2 Example 1 was repeated except that the ultraviolet irradiation in the ozone atmosphere immediately before bump plating was omitted and the conventional methanol substitution method was used instead.
The same operation was carried out. As a result, bumps did not grow in three of the 9,900 holes.

【0052】[0052]

【発明の効果】本発明の接点部の形成方法によれば、絶
縁性樹脂層の表面および/または絶縁性樹脂層に穿設さ
れた貫通孔の内面に、オゾン処理および/または紫外線
照射を行うので、絶縁性樹脂層の表面および/またはめ
っきすべき貫通孔の内面は、めっき液との濡れ性が向上
する。従って、めっき液が完全に貫通孔内に充填されな
いことによるバンプの未成長、めっき液の貫通孔内への
不十分な充填によるバンプの成長不良、さらにめっきの
際に気泡が絶縁性樹脂層の表面の貫通孔近傍に付着する
ことによるバンプ変形などの接点部の欠陥不良が極端に
減少するので、精密なバンプめっきなどの接点部の形成
が行える。特に、一製品あたりに多くの接点部を形成す
る場合、従来法では問題となっていた低歩留りが改善さ
れるので、大きな経済効果が得られる。
According to the method of forming the contact portion of the present invention, the surface of the insulating resin layer and / or the inner surface of the through hole formed in the insulating resin layer is subjected to ozone treatment and / or ultraviolet irradiation. Therefore, the wettability with the plating solution is improved on the surface of the insulating resin layer and / or the inner surface of the through hole to be plated. Therefore, the bumps do not grow because the plating solution is not completely filled in the through holes, the bumps do not grow well due to insufficient filling of the plating solution into the through holes, and bubbles during the plating process may cause bubbles in the insulating resin layer. Since defective defects of the contact portion such as bump deformation due to the adhesion to the vicinity of the through hole on the surface are extremely reduced, the contact portion can be precisely formed by bump plating. In particular, when a large number of contact portions are formed per product, the low yield, which has been a problem in the conventional method, is improved, so that a large economic effect can be obtained.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の接点部の形成方法による製造工程を示
す、積層体の断面図である。
FIG. 1 is a cross-sectional view of a laminated body showing a manufacturing process according to a method of forming a contact portion of the present invention.

【符号の説明】[Explanation of symbols]

1 絶縁性樹脂層 1a 表面 1b 内面 2 導電層 3 貫通孔 4 積層体 6 紫外線 7 バンプ(接点部) DESCRIPTION OF SYMBOLS 1 Insulating resin layer 1a Surface 1b Inner surface 2 Conductive layer 3 Through hole 4 Laminated body 6 Ultraviolet ray 7 Bump (contact part)

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 絶縁性樹脂層と導電層とが積層され、該
絶縁性樹脂層を貫通して該導電層に至る貫通孔を有する
積層体において、該絶縁性樹脂層の表面および/または
該貫通孔の内面に、オゾン処理および/または紫外線照
射を行った後、該貫通孔内に金属物質を充填することを
特徴とする接点部の形成方法。
1. A laminate in which an insulating resin layer and a conductive layer are laminated, and which has a through hole penetrating the insulating resin layer and reaching the conductive layer, the surface of the insulating resin layer and / or the A method of forming a contact portion, which comprises subjecting an inner surface of a through hole to ozone treatment and / or ultraviolet irradiation, and then filling the through hole with a metal substance.
【請求項2】 紫外線照射をオゾンの存在下にて行うこ
とを特徴とする請求項1記載の方法。
2. The method according to claim 1, wherein the ultraviolet irradiation is performed in the presence of ozone.
【請求項3】 185nmおよび/または254nmの
紫外線を照射することを特徴とする請求項1または2記
載の方法。
3. The method according to claim 1, which comprises irradiating with ultraviolet rays having a wavelength of 185 nm and / or 254 nm.
【請求項4】 オゾン濃度が100〜1000ppmま
たは2000〜10000ppmであることを特徴とす
る請求項1〜3のいずれか記載の方法。
4. The method according to claim 1, wherein the ozone concentration is 100 to 1000 ppm or 2000 to 10000 ppm.
JP31882994A 1994-12-21 1994-12-21 Method of forming contact Pending JPH08180757A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31882994A JPH08180757A (en) 1994-12-21 1994-12-21 Method of forming contact

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31882994A JPH08180757A (en) 1994-12-21 1994-12-21 Method of forming contact

Publications (1)

Publication Number Publication Date
JPH08180757A true JPH08180757A (en) 1996-07-12

Family

ID=18103426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31882994A Pending JPH08180757A (en) 1994-12-21 1994-12-21 Method of forming contact

Country Status (1)

Country Link
JP (1) JPH08180757A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6406991B2 (en) 1999-12-27 2002-06-18 Hoya Corporation Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board
JP2008135550A (en) * 2006-11-28 2008-06-12 Sumitomo Bakelite Co Ltd Key contact built-in type multilayer circuit board and its manufacturing method
WO2014104154A1 (en) * 2012-12-27 2014-07-03 ウシオ電機株式会社 Desmearing method and desmearing device
JP2014127604A (en) * 2012-12-27 2014-07-07 Ushio Inc Desmearing method
WO2015025777A1 (en) * 2013-08-23 2015-02-26 ウシオ電機株式会社 Desmearing method and desmearing apparatus
JP2015061026A (en) * 2013-09-20 2015-03-30 ウシオ電機株式会社 Manufacturing method of wiring board material and wiring board material
JP2015119126A (en) * 2013-12-20 2015-06-25 ウシオ電機株式会社 Desmearing method of wiring board material, production method of wiring board material and composite insulation layer formation material
KR20150138027A (en) * 2014-05-29 2015-12-09 도요타지도샤가부시키가이샤 Multilayer wiring board and manufacturing method for the multilayer wiring board
JP2016012678A (en) * 2014-06-30 2016-01-21 ウシオ電機株式会社 Desmear processing method and desmear processing apparatus
KR20160089463A (en) 2014-01-20 2016-07-27 우시오덴키 가부시키가이샤 Desmearing processing device
US9745428B2 (en) 2013-08-09 2017-08-29 Canon Components, Inc. Method for processing resin product and resin product
TWI607680B (en) * 2014-06-27 2017-12-01 牛尾電機股份有限公司 Scrape removal device
US20200113061A1 (en) * 2016-03-03 2020-04-09 Ushio Denki Kabushiki Kaisha Method for producing wiring board, and wiring board
CN115942617A (en) * 2022-12-27 2023-04-07 东莞市五株电子科技有限公司 Blind groove manufacturing method and rigid-flexible PCB
CN115988760A (en) * 2022-12-27 2023-04-18 东莞市五株电子科技有限公司 High-reliability blind hole manufacturing method and PCB

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6713376B2 (en) 1999-12-27 2004-03-30 Hoya Corporation Method of manufacturing a contract element and a multi-layered wiring substrate, and wafer batch contact board
US6406991B2 (en) 1999-12-27 2002-06-18 Hoya Corporation Method of manufacturing a contact element and a multi-layered wiring substrate, and wafer batch contact board
JP2008135550A (en) * 2006-11-28 2008-06-12 Sumitomo Bakelite Co Ltd Key contact built-in type multilayer circuit board and its manufacturing method
US20150351251A1 (en) * 2012-12-27 2015-12-03 Ushio Denki Kabushiki Kaisha Desmearing method and desmearing device
WO2014104154A1 (en) * 2012-12-27 2014-07-03 ウシオ電機株式会社 Desmearing method and desmearing device
JP2014127604A (en) * 2012-12-27 2014-07-07 Ushio Inc Desmearing method
US11102889B2 (en) 2012-12-27 2021-08-24 Ushio Denki Kabushiki Kaisha Desmearing method and desmearing device
KR20170030654A (en) 2012-12-27 2017-03-17 우시오덴키 가부시키가이샤 Desmearing method and desmearing device
JP2016111372A (en) * 2012-12-27 2016-06-20 ウシオ電機株式会社 Desmear processing device
CN104838732A (en) * 2012-12-27 2015-08-12 优志旺电机株式会社 Slag removal treatment method and slag removal treatment device
US9745428B2 (en) 2013-08-09 2017-08-29 Canon Components, Inc. Method for processing resin product and resin product
JP2015041728A (en) * 2013-08-23 2015-03-02 ウシオ電機株式会社 Desmear processing method and desmear processing apparatus
US20160199887A1 (en) * 2013-08-23 2016-07-14 Ushio Denki Kabushiki Kaisha Desmearing method and desmearing apparatus
WO2015025777A1 (en) * 2013-08-23 2015-02-26 ウシオ電機株式会社 Desmearing method and desmearing apparatus
JP2015061026A (en) * 2013-09-20 2015-03-30 ウシオ電機株式会社 Manufacturing method of wiring board material and wiring board material
WO2015093229A1 (en) * 2013-12-20 2015-06-25 ウシオ電機株式会社 Desmearing method for wiring board materials, method for producing wiring board material and composite insulating layer-forming material
JP2015119126A (en) * 2013-12-20 2015-06-25 ウシオ電機株式会社 Desmearing method of wiring board material, production method of wiring board material and composite insulation layer formation material
US10420221B2 (en) 2013-12-20 2019-09-17 Ushio Denki Kabushiki Kaisha Wiring board desmear treatment method
KR20160089463A (en) 2014-01-20 2016-07-27 우시오덴키 가부시키가이샤 Desmearing processing device
KR20150138027A (en) * 2014-05-29 2015-12-09 도요타지도샤가부시키가이샤 Multilayer wiring board and manufacturing method for the multilayer wiring board
DE102015108162B4 (en) 2014-05-29 2023-09-21 Denso Corporation Multilayer circuit board and manufacturing process for the multilayer circuit board
TWI607680B (en) * 2014-06-27 2017-12-01 牛尾電機股份有限公司 Scrape removal device
TWI616126B (en) * 2014-06-27 2018-02-21 Ushio Electric Inc Desmear treatment device
JP2016012678A (en) * 2014-06-30 2016-01-21 ウシオ電機株式会社 Desmear processing method and desmear processing apparatus
US20200113061A1 (en) * 2016-03-03 2020-04-09 Ushio Denki Kabushiki Kaisha Method for producing wiring board, and wiring board
CN115942617A (en) * 2022-12-27 2023-04-07 东莞市五株电子科技有限公司 Blind groove manufacturing method and rigid-flexible PCB
CN115988760A (en) * 2022-12-27 2023-04-18 东莞市五株电子科技有限公司 High-reliability blind hole manufacturing method and PCB

Similar Documents

Publication Publication Date Title
JPH08180757A (en) Method of forming contact
JP2654359B2 (en) Method for surface modification of halogenated polymer materials
US5495665A (en) Process for providing a landless via connection
JP3593234B2 (en) Method for manufacturing double-sided wiring tape carrier for semiconductor device
US6522014B1 (en) Fabrication of a metalized blind via
JP4212006B2 (en) Manufacturing method of multilayer printed wiring board
WO2008056603A1 (en) Electroless copper plating method
JPH1065315A (en) Method of manufacturing flexible printed circuit and flexible printed circuit obtained by the method
JP2984205B2 (en) Anisotropic conductive film
US4976808A (en) Process for removing a polyimide resin by dissolution
JP3213037B2 (en) Manufacturing method of processed film
JP2984064B2 (en) Method for producing anisotropic conductive film
JP3265062B2 (en) Manufacturing method of processed film
JP3034829B2 (en) Method for manufacturing double-sided tape carrier
US7922887B2 (en) Metal structure and method of its production
JP2003046028A (en) Manufacturing method of multilayer printed wiring board
JP4332795B2 (en) Electroless plating method
JPH05226054A (en) Method for producing anisotropic conductive film
JPH05325669A (en) Manufacture of anisotropic conductive film
JPH05152019A (en) Anisotropic conductive connector
JP3405473B2 (en) Laser processing of heat-resistant resin
JP4905318B2 (en) Circuit board manufacturing method
JP3236352B2 (en) Circuit board manufacturing method
JP4176105B2 (en) Printed wiring board
JP2009295872A (en) Method for manufacturing printed circuit board, and printed circuit board

Legal Events

Date Code Title Description
A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040106

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040303

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20040907

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20041104

A02 Decision of refusal

Effective date: 20050621

Free format text: JAPANESE INTERMEDIATE CODE: A02

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20050810

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20051003

A912 Removal of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20051202