JPH08139426A - Surface mount electronic components - Google Patents
Surface mount electronic componentsInfo
- Publication number
- JPH08139426A JPH08139426A JP6303113A JP30311394A JPH08139426A JP H08139426 A JPH08139426 A JP H08139426A JP 6303113 A JP6303113 A JP 6303113A JP 30311394 A JP30311394 A JP 30311394A JP H08139426 A JPH08139426 A JP H08139426A
- Authority
- JP
- Japan
- Prior art keywords
- bonding material
- substrate
- electrode
- pad portion
- surface mount
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000000758 substrate Substances 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 8
- 239000010703 silicon Substances 0.000 claims abstract description 8
- 239000002265 redox agent Substances 0.000 claims abstract description 7
- 238000000605 extraction Methods 0.000 claims description 7
- 239000003638 chemical reducing agent Substances 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000000919 ceramic Substances 0.000 description 24
- 239000013078 crystal Substances 0.000 description 21
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 230000004308 accommodation Effects 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- MOFOBJHOKRNACT-UHFFFAOYSA-N nickel silver Chemical compound [Ni].[Ag] MOFOBJHOKRNACT-UHFFFAOYSA-N 0.000 description 1
- 239000010956 nickel silver Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Landscapes
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Parts Printed On Printed Circuit Boards (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
(57)【要約】
【目的】 小型でより製造上にも簡素化がはかれる信頼
性の高い表面実装型電子部品を提供する。
【構成】 外部回路と導通する引出電極が形成された基
板1Aが有り、前記引出電極に素子搭載パッド部11
C,12C,13C,14Cを設け、また電極31が設
けられた素子3が有り、前記素子のリード電極312の
一端には接合材パッド部313が設けられている、この
引出電極の素子搭載パッド部と素子のリード電極の接合
材パッド部とは少なくともシリコン系接合材等の弾性質
を有する導電性接合材51を介して電気的機械的に接合
されて、前記基板上に前記素子が搭載されており、前記
素子を搭載した基板に蓋体4を封止してなる表面実装型
電子部品において、前記弾性質を有する導電性接合材に
Pd等の酸化還元剤を混入させた。
(57) [Summary] [Purpose] To provide a highly reliable surface mount type electronic component which is small in size and can be simplified in manufacturing. [Structure] There is a substrate 1A on which a lead-out electrode that is electrically connected to an external circuit is formed, and the lead-out electrode is provided with an element mounting pad portion 11
There is an element 3 provided with C, 12C, 13C, 14C, and an electrode 31, and a lead pad 312 of the element is provided with a bonding material pad portion 313 at one end thereof. And the bonding material pad portion of the lead electrode of the element are electromechanically bonded at least through a conductive bonding material 51 having elasticity such as a silicon-based bonding material, and the element is mounted on the substrate. In the surface mount type electronic component in which the lid 4 is sealed on the substrate on which the element is mounted, a redox agent such as Pd is mixed in the conductive bonding material having elasticity.
Description
【0001】[0001]
【産業上の利用分野】本発明は、水晶振動子や水晶フィ
ルタ等の表面実装型電子部品に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface mount type electronic component such as a crystal oscillator or a crystal filter.
【0002】[0002]
【従来の技術】従来の実施例として、セラミックケース
を用いた圧電振動子を例にして説明する。図5は従来の
実施例を示す分解斜視図である。セラミック基板1Aは
アルミナからなり、薄板状に加工され、かつその側面に
外部端子を構成する4つの切り欠き1a,1b,1c,
1dが設けられている。このセラミック基板1A上に
は、前記4つの切り欠きから導電パッドを構成するサポ
ート搭載部13B(一部のみ図示)にかけて、図示しな
い引出電極がメタライズ処理されている。前記セラミッ
ク基板1Aの上部にさらに、切り抜き15Bが設けられ
たセラミック基板1Bが積層されている。そしてこれら
のセラミック基板1A,1Bを焼結することにより、前
記切り抜き15Bによる収容スペースが形成される。そ
してサポート21,22,23,24は、例えば洋白や
Cu−Ni−Zn系合金、SUS等の金属板からなり、
それぞれ基板結合部211,221,231,241と
素子搭載部212,222,232,242と、これら
を結合する立ち上がり部を有する平板形状となってい
る。これらのサポートの素子搭載部212,222,2
32,242を前記切り抜き15Bによって形成される
基板長手方向の中心側に向かって、かつ、基板結合部2
11,221,231,241を前記基板のサポート搭
載部13B(一部のみ図示)に搭載して例えばレーザー
溶接等の手法により電気的機械的な接合を施す。このよ
うにしてサポート21,22,23,24は、基板長手
方向の両端部の各々のサポート搭載部でのみ固定される
とともに前記サポート搭載部から中心側に向かって若干
斜め上方に延伸している。そして表裏面に励振電極31
(裏面については図示せず)が形成された矩形状の水晶
板3を前記サポートの素子搭載部212,222,23
2,242に搭載し、本発明の第1の実施例では、サポ
ート21,24のいずれか(もしくは両方)と励振電極
31とが、サポート22,23のいずれか(もしくは両
方)と裏面側の励振電極とが、エポキシ系あるいはポリ
イミド系の導電性接合材により少なくとも電気的に接続
が施されている。そして前記サポート、並びに水晶板が
基板が収容されたセラミック基板に蓋4をかぶせ、例え
ばシーム溶接等の手法により気密封止していた。2. Description of the Related Art As a conventional example, a piezoelectric vibrator using a ceramic case will be described as an example. FIG. 5 is an exploded perspective view showing a conventional embodiment. The ceramic substrate 1A is made of alumina, is processed into a thin plate shape, and has four notches 1a, 1b, 1c, which form external terminals on its side surfaces.
1d is provided. On the ceramic substrate 1A, a lead electrode (not shown) is metallized from the four cutouts to the support mounting portion 13B (only a part is shown) that constitutes a conductive pad. A ceramic substrate 1B provided with a cutout 15B is further laminated on the ceramic substrate 1A. Then, by sintering these ceramic substrates 1A and 1B, an accommodation space is formed by the cutout 15B. The supports 21, 22, 23, and 24 are made of, for example, nickel silver, Cu-Ni-Zn alloy, or a metal plate such as SUS,
Each of them has a flat plate shape having substrate coupling portions 211, 221, 231, 241 and element mounting portions 212, 222, 232, 242, and a rising portion coupling these components. These support element mounting parts 212, 222, 2
32 and 242 toward the center side in the substrate longitudinal direction formed by the cutout 15B, and the substrate coupling portion 2
11, 221, 231, and 241 are mounted on the support mounting portion 13B (only part of which is shown) of the substrate, and electromechanical bonding is performed by a method such as laser welding. In this way, the supports 21, 22, 23, 24 are fixed only at the respective support mounting portions at both ends in the substrate longitudinal direction, and extend slightly obliquely upward from the support mounting portions toward the center side. . The excitation electrodes 31 are provided on the front and back surfaces.
The rectangular crystal plate 3 on which the back surface (not shown) is formed is attached to the support element mounting portions 212, 222, and 23.
2 and 242, and in the first embodiment of the present invention, either (or both) of the supports 21 and 24 and the excitation electrode 31 are provided on either side (or both) of the supports 22 and 23 and the back surface side. The excitation electrode is at least electrically connected by an epoxy-based or polyimide-based conductive bonding material. Then, the support 4 and the ceramic substrate in which the crystal plate is housed are covered with the lid 4 and hermetically sealed by a technique such as seam welding.
【0003】[0003]
【発明が解決しようとする課題】近年、表面実装型電子
部品は、軽量化・薄型化・小型化が計られており、水晶
振動子や水晶フィルタ等の圧電振動子の分野でも例外で
はないのが現状である。しかし、耐熱性・温度特性・耐
衝撃性等を考慮すると、基板と圧電板との間に導電性接
合材を介してサポートが取り付ける必要があった。内蔵
する圧電板の形状が小さくなっても、サポートによる高
さ、あるいはサポート幅等により、表面実装型電子部品
としての圧電振動子の軽量化・薄型化・小型化の阻害要
因となっていた。また、サポート形成工程経るうえで工
程の複雑化・装置の多様化・製造上のコストアップが免
れ得なかった。In recent years, surface mount type electronic parts have been reduced in weight, thickness and size, and are no exception in the field of piezoelectric vibrators such as crystal oscillators and crystal filters. Is the current situation. However, considering heat resistance, temperature characteristics, impact resistance, etc., it was necessary to attach a support between the substrate and the piezoelectric plate via a conductive bonding material. Even if the shape of the built-in piezoelectric plate becomes small, the height or the support width of the support has been an obstacle to weight reduction, thickness reduction, and size reduction of the piezoelectric vibrator as a surface mount electronic component. Moreover, in the process of forming the support, the process is complicated, the equipment is diversified, and the manufacturing cost is increased.
【0004】そこで本発明は、小型でより製造上にも簡
素化がはかれる信頼性の高い表面実装型電子部品を提供
することを目的とする。Therefore, an object of the present invention is to provide a highly reliable surface mount type electronic component which is small in size and can be simplified in manufacturing.
【0005】[0005]
【課題を解決するための手段】そこで、本発明の表面実
装型電子部品は、外部回路と導通する引出電極が形成さ
れた基板が有り、前記引出電極に素子搭載パッド部を設
け、また主電極とリード電極が設けられた素子が有り、
前記素子のリード電極一端には接合材パッド部が設けら
れている、この引出電極の素子搭載パッド部と素子のリ
ード電極の接合材パッド部とは少なくともシリコン系接
合材等の弾性質を有する導電性接合材を介して電気的機
械的に接合されて、前記基板上に前記素子が搭載されて
おり、前記素子を搭載した基板に蓋体を封止してなる表
面実装型電子部品において、前記弾性質を有する導電性
接合材にPd等の酸化還元剤を混入させた。そして、前
記Pdの導電性接合材に対する歩合としては2〜8%が
混入されている。Therefore, the surface mount type electronic component of the present invention has a substrate on which an extraction electrode is formed which is electrically connected to an external circuit, the extraction electrode is provided with an element mounting pad portion, and the main electrode is provided. And there is an element provided with a lead electrode,
A bonding material pad portion is provided at one end of the lead electrode of the element. The element mounting pad portion of the extraction electrode and the bonding material pad portion of the lead electrode of the element are at least conductive materials having elasticity such as a silicon-based bonding material. Electromechanically bonded via a conductive bonding material, the element is mounted on the substrate, in the surface mount type electronic component formed by sealing a lid on the substrate on which the element is mounted, A redox agent such as Pd was mixed into the conductive bonding material having elasticity. Then, the proportion of Pd with respect to the conductive bonding material is 2 to 8%.
【0006】また、前記弾性質を有する導電性接合材
は、前記基板に一度塗布した後に素子を搭載し、少なく
とも、もう一度塗布して素子を接合した。The conductive bonding material having elasticity is applied to the substrate once and then the element is mounted, and at least applied again to bond the element.
【0007】また、少なくとも前記素子のリード電極の
接合材パッド部、あるいは前記基板の素子搭載パッド部
の少なくとも一方の表面をAgとした。At least one surface of the bonding material pad portion of the lead electrode of the element or the element mounting pad portion of the substrate is made of Ag.
【0008】また、素子のリード電極の接合材パッド部
分、あるいは前記基板の素子搭載パッド部の少なくとも
一方には、少なくとも素子が露出する部分を形成した。Further, at least one of the bonding material pad portion of the lead electrode of the element or the element mounting pad portion of the substrate is formed with at least a portion where the element is exposed.
【0009】[0009]
【作用】特許請求項1により、導電性接合材中のO2を
取り去るため導電性(金属片もしくは金属球)を劣化
(酸化による導電率の低下)させない。According to the first aspect of the present invention, since O 2 in the conductive bonding material is removed, the conductivity (metal piece or metal ball) is not deteriorated (the conductivity is lowered by oxidation).
【0010】特許請求項2により、導電性接合材中のO
2を取り去るため導電性(金属片もしくは金属球)を劣
化(酸化による導電率の低下)させない。According to claim 2, O in the conductive bonding material
Since 2 is removed, the conductivity (metal piece or metal sphere) is not deteriorated (the conductivity decreases due to oxidation).
【0011】特許請求項3により、一度塗布した導電性
接合材の上に素子を搭載し、その後もう一度導電性接合
材を塗布して硬化接合させるため、搭載精度の向上と接
合強度の向上がはかれる。According to the third aspect of the present invention, the element is mounted on the conductive bonding material once applied, and then the conductive bonding material is applied again to cure and bond, so that the mounting accuracy and the bonding strength can be improved. .
【0012】特許請求項4により、AgはAl等に比べ
て比較的酸化が起こりにくいため、同電極上に酸化膜が
できにくく、導電性接合材との導電性の低下をまねきに
くい。そして、導電性接合材とのなじみがよいため、基
板と素子のより強固な電気的機械的接合が可能となる。According to claim 4, since Ag is relatively less likely to oxidize than Al or the like, an oxide film is less likely to be formed on the same electrode, and the conductivity with the conductive bonding material is less likely to decrease. Further, since it is well compatible with the conductive bonding material, it is possible to perform stronger electromechanical bonding between the substrate and the element.
【0013】特許請求項5により、素子が露出した部分
と導電性接合材、あるいは基板が露出した部分と導電性
接合材とのぬれ性によるなじみがより強く、基板と素子
とのさらにより一層強固な機械的な接合が可能となる。According to claim 5, the wettability between the exposed portion of the element and the conductive bonding material or between the exposed portion of the substrate and the conductive bonding material is stronger, and the substrate and the element are even stronger. It is possible to perform various mechanical joining.
【0014】特許請求項6により、素子が露出した部分
と導電性接合材、あるいは基板が露出した部分と導電性
接合材とのぬれ性によるなじみがより強く、基板と素子
とのさらにより一層強固な機械的な接合が可能となる。According to claim 6, the wettability between the exposed portion of the element and the conductive bonding material or the exposed portion of the substrate and the conductive bonding material is stronger, and the substrate and the element are even stronger. It is possible to perform various mechanical joining.
【0015】[0015]
【実施例】次に、本発明の第1の実施例について、セラ
ミックケースを用いた表面実装型の圧電振動子を例にし
て説明する。図1は本発明の第1の実施例を示す分解斜
視図であり、図2は図1の組み立てた状態の断面図であ
る。セラミック基板1Aはアルミナからなり、薄板状に
加工され、かつその側面に外部端子を構成する4つの切
り欠き1a,1b,1c,1dが設けられている。この
セラミック基板1A上には、前記4つの切り欠きから導
電パッドを構成する素子搭載パッド部11C,12C,
13C,14Cにかけて、図示しない引出電極(Ag
等)がメタライズ処理されている。前記セラミック基板
1Aの上部にさらに、切り抜き15Cが設けられたセラ
ミック基板1Cが積層されている。そしてこれらのセラ
ミック基板1A,1Cを焼結することにより、前記切り
抜き15Cによる収容スペースが形成される。そして、
前記素子搭載パッド部11C,12C,13C,14C
の基板露出部131C(一部のみ図示)上に、導電性接
合材を塗布することにより前記導電性接合材の素子搭載
台51を構成する。この素子搭載台51を構成する導電
性接合材は、シリコン樹脂の接着剤からなり、導体部と
して例えば薄板状のAgや球状のAgを含み、かつ酸化
還元剤としてのPdを2〜8%含んだものである。ま
た、矩形状の水晶板3は、表裏面にスパッタリング蒸着
法等により、Alの励振電極31,32とリード電極3
12(裏面については図示せず)とが形成されており、
さらにリード電極の端部には長円切り欠き形状の素子露
出部314,324が設けられた接合材パッド部31
3,323が形成されている。そして前記接合材パッド
部313,323については、さらに同形状のマスクを
用いてAgが蒸着されている。そして、矩形状の水晶板
3を前記素子搭載台51に搭載し、前記同様のシリコン
樹脂系の導電性接合材52を水晶板3の素子露出部31
4,324を含む接合材パッド部313,323に塗布
して硬化させることにより、前記水晶板3と前記導電性
接合材による素子搭載搭載台51との電気的機械的な接
合が施される。以上を収容されたセラミック基板に蓋4
をかぶせ、例えばシーム溶接等の手法により気密封止す
る。Next, a first embodiment of the present invention will be described by taking a surface mount type piezoelectric vibrator using a ceramic case as an example. 1 is an exploded perspective view showing a first embodiment of the present invention, and FIG. 2 is a sectional view of the assembled state of FIG. The ceramic substrate 1A is made of alumina, is processed into a thin plate shape, and is provided with four notches 1a, 1b, 1c, and 1d forming external terminals on its side surface. On the ceramic substrate 1A, element mounting pad portions 11C, 12C, which form a conductive pad from the four notches,
13C and 14C, the extraction electrode (Ag
Etc.) have been metallized. A ceramic substrate 1C provided with a cutout 15C is further laminated on the ceramic substrate 1A. Then, by sintering these ceramic substrates 1A and 1C, an accommodation space is formed by the cutout 15C. And
The element mounting pad portions 11C, 12C, 13C, 14C
An element mounting base 51 of the conductive bonding material is formed by applying a conductive bonding material on the exposed substrate portion 131C (only a part of which is shown). The conductive bonding material forming the element mounting base 51 is made of a silicon resin adhesive, contains, for example, thin plate-like Ag or spherical Ag as the conductor portion, and contains 2 to 8% of Pd as the redox agent. It is The rectangular crystal plate 3 has Al excitation electrodes 31 and 32 and a lead electrode 3 formed on the front and back surfaces by a sputtering deposition method or the like.
12 (the back side is not shown) is formed,
Further, the bonding material pad portion 31 in which the element exposure portions 314 and 324 in the shape of oval cutouts are provided at the end portions of the lead electrodes
3, 323 are formed. Further, with respect to the bonding material pad portions 313 and 323, Ag is vapor-deposited using a mask having the same shape. Then, the rectangular crystal plate 3 is mounted on the element mounting base 51, and the same silicon resin-based conductive bonding material 52 is used as the element exposed portion 31 of the crystal plate 3.
By coating and hardening the bonding material pad portions 313 and 323 including 4,324, the electro-mechanical bonding between the crystal plate 3 and the element mounting base 51 by the conductive bonding material is performed. A lid 4 on the ceramic substrate that accommodates the above
And airtightly sealed by a technique such as seam welding.
【0016】尚、本発明の第1の実施例では、酸化還元
剤として、Pdとしたが、NiやCu等であってもよ
い。また、素子露出部形状として長円切り欠き形状とし
たが、円切り欠き形状や楕円切り欠き形状などでもよ
く、三角切り欠き形状や四角切り欠き形状等のような多
角形状としても特に問題はない。また、前記接合材パッ
ド部についてのみAgを蒸着したが励振電極、リード電
極等全ての電極領域にAgを蒸着してもよい。すなわ
ち、少なくとも2層以上の多層電極構造とした場合、最
上層の電極をAgとすればよい。例えば、Alの上層に
Cr、そのさらに上層にAgとすると好ましい。Although Pd is used as the redox agent in the first embodiment of the present invention, Ni, Cu or the like may be used. Further, although the element exposed portion has an oval cutout shape, it may have a circular cutout shape, an elliptical cutout shape, or a polygonal shape such as a triangular cutout shape or a square cutout shape. . Further, Ag is vapor-deposited only on the bonding material pad portion, but Ag may be vapor-deposited on all electrode regions such as the excitation electrode and the lead electrode. That is, in the case of a multi-layer electrode structure having at least two layers, the uppermost electrode may be Ag. For example, it is preferable to set Cr on the upper layer of Al and Ag on the upper layer.
【0017】次に、第2の実施例として、セラミックケ
ースを用いた表面実装型の圧電振動子を例にして説明す
る。また、水晶板としてモノリシック水晶フィルタと呼
ばれる多電極水晶板を用いた。図3は本発明の第2の実
施例を示す分解斜視図であり、図4は図3の組み立てた
状態の断面図である。尚、前記第1の実施例と同様の部
分については同番号を付した。セラミック基板1Aはア
ルミナからなり、薄板状に加工され、かつその側面に外
部端子を構成する4つの切り欠き1a,1b,1c,1
dが設けられている。このセラミック基板1A上には、
前記4つの切り欠きから導電パッドを構成する素子搭載
パッド部11C,12C,13C,14Cにかけて、図
示しない引出電極(Ag等)がメタライズ処理されてい
る。前記セラミック基板1Aの上部にさらに、切り抜き
15Cが設けられたセラミック基板1Cが積層されてい
る。そしてこれらのセラミック基板1A,1Cを焼結す
ることにより、前記切り抜き15Cによる収容スペース
が形成される。そして、前記素子搭載パッド部11C,
12C,13C,14Cの基板露出部112C、122
C(一部のみ図示)上に、導電性接合材を塗布して硬化
させることにより前記導電性接合材の素子搭載台51を
構成する。この素子搭載台51を構成する導電性接合材
は、シリコン樹脂の接着剤からなり、導体部として例え
ば薄板状のAgや球状のAgを含み、かつ酸化還元剤と
してのPdを2〜8%含んだものである。また、矩形状
の水晶板3は、表裏面にスパッタリング蒸着法等によ
り、Alの上層にCr、さらに上層にAgを蒸着した励
振電極33,34と共通電極35、並びにリード電極3
32,342(裏面については図示せず)とが形成され
ており、さらにリード電極の端部には円形状の素子露出
部334,344,354が設けられた接合材パッド部
333,343,353が形成されている。そして、矩
形状の水晶板3を前記素子搭載台51に搭載し、前記同
様のシリコン樹脂系の導電性接合材52を水晶板3の素
子露出部334,344,354を含む接合材パッド部
333,343,353に塗布して硬化させることによ
り、前記水晶板3と前記導電性接合材による素子搭載搭
載台51との電気的機械的な接合が施される。以上を収
容されたセラミック基板に蓋4をかぶせ、例えばシーム
溶接等の手法により気密封止する。Next, as a second embodiment, a surface mount type piezoelectric vibrator using a ceramic case will be described as an example. A multi-electrode crystal plate called a monolithic crystal filter was used as the crystal plate. FIG. 3 is an exploded perspective view showing a second embodiment of the present invention, and FIG. 4 is a sectional view of the assembled state of FIG. The same parts as those in the first embodiment are designated by the same reference numerals. The ceramic substrate 1A is made of alumina, is processed into a thin plate shape, and has four notches 1a, 1b, 1c, 1 which form external terminals on its side surfaces.
d is provided. On this ceramic substrate 1A,
From the four notches to the element mounting pad portions 11C, 12C, 13C and 14C that form the conductive pads, a lead electrode (not shown) (Ag or the like) is metallized. A ceramic substrate 1C provided with a cutout 15C is further laminated on the ceramic substrate 1A. Then, by sintering these ceramic substrates 1A and 1C, an accommodation space is formed by the cutout 15C. Then, the element mounting pad portion 11C,
12C, 13C, 14C substrate exposed portions 112C, 122
An element mounting base 51 of the conductive bonding material is formed by applying a conductive bonding material on C (only a part is shown) and curing it. The conductive bonding material forming the element mounting base 51 is made of a silicon resin adhesive, contains, for example, thin plate-like Ag or spherical Ag as the conductor portion, and contains 2 to 8% of Pd as the redox agent. It is The rectangular crystal plate 3 has excitation electrodes 33 and 34 and a common electrode 35, and a lead electrode 3 on which Cr is deposited on the upper layer of Al and Ag is deposited on the upper layer by sputtering deposition method or the like on the front and back surfaces.
32, 342 (the back surface is not shown) are formed, and bonding material pad portions 333, 343, 353 in which circular element exposed portions 334, 344, 354 are further provided at the end portions of the lead electrodes. Are formed. Then, the rectangular crystal plate 3 is mounted on the element mounting base 51, and the same silicon resin-based conductive bonding material 52 as described above is bonded to the bonding material pad portion 333 of the crystal plate 3 including the element exposed portions 334, 344 and 354. , 343, 353 and cured to electrically and mechanically bond the crystal plate 3 and the element mounting base 51 with the conductive bonding material. The lid 4 is put on the ceramic substrate containing the above and hermetically sealed by a technique such as seam welding.
【0018】尚、本発明の第2の実施例では、酸化還元
剤として、Pdとしたが、NiやCu等であってもよ
い。また、素子露出部形状として円形状としたが、楕円
形状や長円形状などでもよく、三角形状や四角形状等の
ような多角形状としても特に問題はない。In the second embodiment of the present invention, Pd is used as the redox agent, but Ni, Cu or the like may be used. Further, although the element exposed portion has a circular shape, it may have an elliptical shape, an oval shape, or the like, and a polygonal shape such as a triangular shape or a quadrangular shape does not pose any particular problem.
【0019】尚、本発明の第1,第2の実施例では水晶
振動子や水晶フィルタをあげたが、水晶発振器等に応用
する事も可能であるし、弾性表面波素子、圧電セラミッ
ク振動子や圧電セラミックフィルタ、あるいはコンデン
サ素子、焦電素子等に転用できることはいうまでもな
い。また、矩形状の素子に限らず、円盤形状の素子でも
実施できることはいうまでもない。In the first and second embodiments of the present invention, the crystal oscillator and the crystal filter are mentioned, but they can also be applied to a crystal oscillator, a surface acoustic wave element, a piezoelectric ceramic oscillator. It goes without saying that it can be diverted to a piezoelectric ceramic filter, a capacitor element, a pyroelectric element, or the like. Further, it goes without saying that not only the rectangular element but also a disk-shaped element can be implemented.
【0020】[0020]
【発明の効果】特許請求項1、並びに特許請求項2によ
り、導電性接合材中のO2を取り去るため導電性(金属
片もしくは金属球)を劣化(酸化による導電率の低下)
させなく、耐衝撃性の高い支持構造が得られる。そし
て、従来のサポートのスペースを考慮することなく電子
部品としての軽量化・薄型化・小型化がはかれる。ま
た、従来のサポート形成工程を考慮することなく製造上
にも簡素化がはかれる。EFFECTS OF THE INVENTION According to claim 1 and claim 2, the conductivity (metal piece or metal sphere) is deteriorated because the O 2 in the conductive bonding material is removed (the conductivity decreases due to oxidation).
A support structure with high impact resistance can be obtained without causing the above. Further, the weight, thickness, and size of the electronic component can be reduced without considering the conventional support space. Moreover, simplification can be achieved in manufacturing without considering the conventional support forming process.
【0021】特許請求項3により、一度塗布した導電性
接合材の上に素子を搭載し、その後もう一度導電性接合
材を塗布して硬化接合させるため、搭載精度の向上と接
合強度の向上がはかれる。According to the third aspect of the present invention, the element is mounted on the conductive bonding material once applied, and then the conductive bonding material is applied again to cure and bond, so that mounting accuracy and bonding strength can be improved. .
【0022】特許請求項4により、AgはAl等に比べ
て比較的酸化が起こりにくいため、同電極上に酸化膜が
できにくく、導電性接合材との導電性の低下をまねきに
くい。そして、導電性接合材とのなじみがよいため、基
板と素子のより強固な電気的機械的接合が可能となる。
そのため、より耐衝撃性が向上し、強度も向上するより
信頼性の高い支持構造が得られる。According to claim 4, since Ag is relatively less likely to oxidize than Al or the like, an oxide film is less likely to be formed on the same electrode, and the conductivity with the conductive bonding material is less likely to decrease. Further, since it is well compatible with the conductive bonding material, it is possible to perform stronger electromechanical bonding between the substrate and the element.
Therefore, it is possible to obtain a more reliable support structure with improved impact resistance and strength.
【0023】特許請求項5、並びに特許請求項6によ
り、素子が露出した部分と導電性接合材、あるいは基板
が露出した部分と導電性接合材とのぬれ性によるなじみ
がより強く、基板と素子とのさらにより一層強固な機械
的な接合が可能となる。そのため、より一層耐衝撃性が
向上し、強度も向上するより一層信頼性の高い支持構造
が得られる。According to claims 5 and 6, the wettability between the exposed portion of the element and the conductive bonding material or the exposed portion of the substrate and the conductive bonding material is stronger, and the substrate and the element are more familiar. This enables even stronger mechanical joining with. Therefore, it is possible to obtain a more reliable support structure with further improved impact resistance and strength.
【図1】本発明の第1の実施例を示す分解者斜視図であ
る。FIG. 1 is an exploded perspective view showing a first embodiment of the present invention.
【図2】図1の組み立てた状態の断面図である。FIG. 2 is a cross-sectional view of the assembled state of FIG.
【図3】本発明の第2の実施例を示す分解者斜視図であ
る。FIG. 3 is an exploded perspective view showing a second embodiment of the present invention.
【図4】図3の組み立てた状態の断面図である。4 is a cross-sectional view of the assembled state of FIG.
【図5】従来の実施例を示す分解者斜視図である。FIG. 5 is a perspective view of a disassembler showing a conventional example.
1A,1B,1C・・・セラミック基板 21,22,23,24・・・サポート 3・・・水晶板 4・・・蓋 51,52・・・シリコン樹脂系の導電性接合材 1A, 1B, 1C ... Ceramic substrate 21, 22, 23, 24 ... Support 3 ... Crystal plate 4 ... Lid 51, 52 ... Silicon resin-based conductive bonding material
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H03H 9/13 H04R 17/00 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication H03H 9/13 H04R 17/00
Claims (6)
た基板が有り、前記引出電極に素子搭載パッド部を設
け、また、主電極とリード電極が設けられた素子が有
り、前記素子のリード電極一端には接合材パッド部が設
けられている、この引出電極の素子搭載パッド部と素子
のリード電極の接合材パッド部とは少なくとも弾性質を
有する導電性接合材を介して電気的機械的に接合され
て、前記基板上に前記素子が搭載されており、前記素子
を搭載した基板に蓋体を封止してなる表面実装型電子部
品において、前記弾性質を有する導電性接合材に酸化還
元剤を混入させた事を特徴とする表面実装型電子部品。1. A lead of the element, wherein there is a substrate on which an extraction electrode is formed which is electrically connected to an external circuit, an element mounting pad portion is provided on the extraction electrode, and an element is provided on which a main electrode and a lead electrode are provided. A bonding material pad portion is provided at one end of the electrode, and the element mounting pad portion of the extraction electrode and the bonding material pad portion of the lead electrode of the element are electromechanical via a conductive bonding material having at least elasticity. In the surface mounting type electronic component, which is bonded to the above, the element is mounted on the substrate, and the lid is sealed on the substrate on which the element is mounted, the conductive bonding material having elasticity is oxidized. A surface mount electronic component characterized by containing a reducing agent.
シリコン系の接合材を用い、また酸化還元剤としてPd
を混入させた事を特徴とする特許請求項1記載の表面実
装型電子部品。2. A silicon-based bonding material is used as the elastic conductive bonding material, and Pd is used as the redox agent.
The surface mount type electronic component according to claim 1, wherein the surface mount electronic component is mixed.
記基板に一度塗布されて素子を搭載し、少なくとも、も
う一度塗布して素子を接合した事を特徴とする特許請求
項1、2記載の表面実装型電子部品。3. The conductive bonding material having elasticity is applied to the substrate once to mount an element, and at least applied again to bond the element. Surface mount electronic components.
材パッド部、あるいは前記基板の素子搭載パッド部の少
なくとも一方の表面がAgである事を特徴とする特許請
求項1、2、3記載の表面実装型電子部品。4. The surface according to claim 1, wherein at least one surface of the bonding material pad portion of the lead electrode of the element or at least one of the element mounting pad portion of the substrate is Ag. Mounted electronic components.
あるいは前記基板の素子搭載パッド部の少なくとも一方
には、少なくとも素子、あるいは基板が露出する部分が
形成されている事を特徴とする表面実装型電子部品。5. A bonding material pad portion of a lead electrode of a device,
Alternatively, at least one of the device mounting pad portions of the substrate is provided with at least a portion where the device or the substrate is exposed, which is a surface mount electronic component.
あるいは前記基板の素子搭載パッド部の少なくとも一方
には、少なくとも素子、あるいは基板が露出する部分が
形成されている事を特徴とする特許請求項1〜4いずれ
か1項に記載の表面実装型電子部品。6. A bonding material pad portion of a lead electrode of a device,
5. The surface mount type electronic device according to claim 1, wherein at least one of the element mounting pad portions of the substrate is formed with at least a portion where the element or the substrate is exposed. parts.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6303113A JP3063066B2 (en) | 1994-11-11 | 1994-11-11 | Surface mount electronic components |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6303113A JP3063066B2 (en) | 1994-11-11 | 1994-11-11 | Surface mount electronic components |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH08139426A true JPH08139426A (en) | 1996-05-31 |
| JP3063066B2 JP3063066B2 (en) | 2000-07-12 |
Family
ID=17917045
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6303113A Expired - Lifetime JP3063066B2 (en) | 1994-11-11 | 1994-11-11 | Surface mount electronic components |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3063066B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10007455B4 (en) * | 1999-02-19 | 2006-02-23 | Murata Mfg. Co., Ltd., Nagaokakyo | Piezoelectric acoustic component |
| JP2006211089A (en) * | 2005-01-26 | 2006-08-10 | Daishinku Corp | Piezoelectric vibration device |
| AU2002221088B2 (en) * | 2000-12-07 | 2007-01-18 | Ge Healthcare Bio-Sciences Kk | Chip quartz oscillator and liquid-phase sensor |
| JP2007166435A (en) * | 2005-12-15 | 2007-06-28 | Daishinku Corp | Crystal vibration device |
-
1994
- 1994-11-11 JP JP6303113A patent/JP3063066B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10007455B4 (en) * | 1999-02-19 | 2006-02-23 | Murata Mfg. Co., Ltd., Nagaokakyo | Piezoelectric acoustic component |
| AU2002221088B2 (en) * | 2000-12-07 | 2007-01-18 | Ge Healthcare Bio-Sciences Kk | Chip quartz oscillator and liquid-phase sensor |
| JP2006211089A (en) * | 2005-01-26 | 2006-08-10 | Daishinku Corp | Piezoelectric vibration device |
| JP2007166435A (en) * | 2005-12-15 | 2007-06-28 | Daishinku Corp | Crystal vibration device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3063066B2 (en) | 2000-07-12 |
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