[go: up one dir, main page]

JPH08138611A - Charged particle beam equipment - Google Patents

Charged particle beam equipment

Info

Publication number
JPH08138611A
JPH08138611A JP6271069A JP27106994A JPH08138611A JP H08138611 A JPH08138611 A JP H08138611A JP 6271069 A JP6271069 A JP 6271069A JP 27106994 A JP27106994 A JP 27106994A JP H08138611 A JPH08138611 A JP H08138611A
Authority
JP
Japan
Prior art keywords
sample
charged particle
particle beam
objective lens
secondary electron
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP6271069A
Other languages
Japanese (ja)
Inventor
Mamoru Nakasuji
護 中筋
Hiroyasu Shimizu
弘泰 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP6271069A priority Critical patent/JPH08138611A/en
Publication of JPH08138611A publication Critical patent/JPH08138611A/en
Withdrawn legal-status Critical Current

Links

Abstract

(57)【要約】 【目的】 インレンズ型で減速電界型の対物レンズを用
いる荷電粒子線装置において、1次荷電粒子線の軸上色
収差を小さく抑え、2次電子を効率良く検出器に集め
る。 【構成】 アノード3と共に電子銃1からの1次電子を
平行ビームにする静電レンズを形成する電極4と、上極
5aと下極5bとの間に試料15を載置した対物レンズ
8との間に、試料15からの2次電子を検出する2次電
子検出器5を設け、電極4に−100Vの電圧を印加す
ると共に、試料15はグランド電位にする。試料15へ
の1次電子を10kVの電圧を印加したライナチューブ
6により減速させる。試料15からの2次電子が、対物
レンズ8の磁界によりライナチューブ6の上部に出た
後、2次電子検出器5に捕捉される。
(57) [Summary] [Objective] In a charged particle beam device using an in-lens type deceleration electric field type objective lens, the axial chromatic aberration of the primary charged particle beam is suppressed small, and secondary electrons are efficiently collected in a detector. . [Structure] An electrode 4 forming an electrostatic lens for converting a primary electron from an electron gun 1 into a parallel beam together with an anode 3, and an objective lens 8 having a sample 15 mounted between an upper pole 5a and a lower pole 5b. A secondary electron detector 5 for detecting secondary electrons from the sample 15 is provided between the two, and a voltage of -100 V is applied to the electrode 4 and the sample 15 is set to the ground potential. The primary electrons to the sample 15 are decelerated by the liner tube 6 to which a voltage of 10 kV is applied. Secondary electrons from the sample 15 are emitted to the upper part of the liner tube 6 by the magnetic field of the objective lens 8 and then captured by the secondary electron detector 5.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、荷電粒子線装置に関
し、特に低エネルギーの電子線プローグで試料の観察、
計測等を行う走査型電子顕微鏡、線幅測定機、又はマイ
クロアナライザ等に適用して好適なものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a charged particle beam apparatus, and particularly to observing a sample with a low energy electron beam probe.
It is suitable for application to a scanning electron microscope, a line width measuring device, a microanalyzer, or the like that performs measurement and the like.

【0002】[0002]

【従来の技術】荷電粒子線を対物レンズとしての電磁レ
ンズにより試料上に収束させて、その試料を観察する荷
電粒子線装置は、今日超微細構造の半導体集積回路の検
査やDNA或いは蛋白質等の超微細構造を解明する上で
有用である。この種の荷電粒子線装置としては、走査型
電子顕微鏡や線幅測定機等が知られている。以下では、
荷電粒子線装置として、走査型電子顕微鏡を例に取って
説明する。
2. Description of the Related Art A charged particle beam apparatus for focusing a charged particle beam on a sample by an electromagnetic lens as an objective lens and observing the sample is used today for inspection of a semiconductor integrated circuit having an ultrafine structure, DNA or protein, etc. It is useful for elucidating the ultrafine structure. Scanning electron microscopes, line width measuring machines, and the like are known as charged particle beam devices of this type. Below,
A scanning electron microscope will be described as an example of the charged particle beam device.

【0003】一般的に、走査型電子顕微鏡では、電子銃
から射出された電子線はコンデンサレンズ等で収束され
た後、対物レンズとしての電磁レンズに入射する。電磁
レンズは2つの磁極を持ち、これらの2つの磁極の間に
生ずる磁界により電子線の焦点位置が調整されて、試料
に照射される。そして、試料から発生する2次電子が2
次電子検出器で検出される。
Generally, in a scanning electron microscope, an electron beam emitted from an electron gun is converged by a condenser lens or the like and then enters an electromagnetic lens as an objective lens. The electromagnetic lens has two magnetic poles, and the focus position of the electron beam is adjusted by the magnetic field generated between these two magnetic poles to irradiate the sample. The secondary electrons generated from the sample are 2
It is detected by the secondary electron detector.

【0004】以上のような構成において、対物レンズと
なる電磁レンズとして減速電界型で、且つ2つの磁極の
間に対象となる試料を置いて観察するインレンズ型の電
磁レンズを使用すれば、試料に照射される電子線(1次
電子)の軸上色収差係数が大幅に小さくなることが知ら
れている。そのため、従来からこのような構成を持つイ
ンレンズ型の荷電粒子線装置の実用化が計られてきた。
In the above-mentioned structure, if the deceleration electric field type electromagnetic lens as the objective lens and the in-lens type electromagnetic lens for observing by placing the target sample between the two magnetic poles are used, It is known that the axial chromatic aberration coefficient of the electron beam (primary electron) radiated on the image is significantly reduced. Therefore, an in-lens type charged particle beam device having such a configuration has been conventionally put into practical use.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、従来の
減速電界型で、且つインレンズ型の電磁レンズを使用し
た場合には、2次電子の検出方法に問題があり、今日ま
で実用化された装置は見られない。即ち、従来の荷電粒
子線装置では、試料から放出された2次電子は加速され
て1次電子の減速を行うための電位が印加されたライナ
チューブ等へ入射してしまい、2次電子検出器へ入らな
いため、試料の観察画像が得られないという不都合があ
った。
However, when the conventional deceleration electric field type and in-lens type electromagnetic lens is used, there is a problem in the method of detecting secondary electrons, and the device has been put to practical use to date. Can't be seen. That is, in the conventional charged particle beam device, the secondary electrons emitted from the sample are accelerated and enter the liner tube or the like to which a potential for decelerating the primary electrons is applied, so that the secondary electron detector is detected. Since it does not enter, there is a disadvantage that an observation image of the sample cannot be obtained.

【0006】本発明は斯かる点に鑑み、1次電子等の入
射する荷電粒子線の軸上色収差係数を小さくした上で、
更に、2次電子を効率良く2次電子検出器に導くことが
できる荷電粒子線装置を提供することを目的とする。
In view of the above point, the present invention reduces the axial chromatic aberration coefficient of the charged particle beam on which primary electrons or the like are incident, and
It is another object of the present invention to provide a charged particle beam device that can efficiently guide secondary electrons to a secondary electron detector.

【0007】[0007]

【課題を解決するための手段】本発明による荷電粒子線
装置は、荷電粒子線を収束させるための対物レンズ
(8)の対向する2つの磁極(9a,9b)間に試料
(15)を配置し、その対物レンズ(8)の上極(9
a)側に配置された電極(6)とその試料(15)との
間に電界を形成し、その試料(15)上にその荷電粒子
線を収束させる荷電粒子線装置において、その対物レン
ズ(8)の上極(9a)の上部に、その荷電粒子線の照
射によりその試料(15)から発生する2次電子を検出
する2次電子検出器(5)を設けたものである。
In a charged particle beam apparatus according to the present invention, a sample (15) is arranged between two facing magnetic poles (9a, 9b) of an objective lens (8) for focusing a charged particle beam. Then, the upper pole (9
In the charged particle beam device that forms an electric field between the electrode (6) arranged on the side a) and the sample (15) thereof and focuses the charged particle beam on the sample (15), the objective lens ( 8) A secondary electron detector (5) for detecting secondary electrons generated from the sample (15) by irradiation of the charged particle beam is provided above the upper electrode (9a).

【0008】この場合、その対物レンズ(8)の上極
(9a)とその2次電子検出器(5)との間に、その荷
電粒子線をその試料(15)上で走査する走査用偏向コ
イル(7)を設けることが好ましい。また、その2次電
子検出器(5)の2次電子入射口の周囲の少なくとも一
部をその試料(15)の電位以下の電位が印加された補
助電極(4)で覆うことが好ましい。
In this case, the deflection for scanning for scanning the charged particle beam on the sample (15) between the upper pole (9a) of the objective lens (8) and the secondary electron detector (5). It is preferable to provide a coil (7). Further, it is preferable that at least a part of the periphery of the secondary electron entrance of the secondary electron detector (5) is covered with the auxiliary electrode (4) to which a potential lower than that of the sample (15) is applied.

【0009】更に、その補助電極(4)を含んで形成さ
れる静電レンズによる収束作用でその荷電粒子線が光源
像(クロスオーバ)を形成しないようにするのが好まし
い。
Further, it is preferable that the charged particle beam does not form a light source image (crossover) by the converging action of the electrostatic lens formed including the auxiliary electrode (4).

【0010】[0010]

【作用】斯かる本発明の荷電粒子線装置によれば、イン
レンズ型の対物レンズ(8)を使用し、対物レンズ
(8)の上極(9a)の上部に、荷電粒子線の照射によ
り試料(15)から発生する2次電子を検出する2次電
子検出器(5)を設けている。従って、上極(9a)側
に電極(6)が存在しても、試料(15)からほぼ全て
の方向に発生する2次電子は、対物レンズ(8)の強い
磁界により一旦光軸近傍に収束し光軸にほぼ平行になっ
た後、通常正の電位に保たれる2次電子検出器(5)に
捕捉される。従って、電極(6)によって入射する荷電
粒子線の軸上色収差を小さくした上で、2次電子の捕捉
効率が良く、SN比の良い検出像が得られる。
According to such a charged particle beam apparatus of the present invention, the in-lens type objective lens (8) is used, and the charged particle beam is irradiated onto the upper pole (9a) of the objective lens (8). A secondary electron detector (5) for detecting secondary electrons generated from the sample (15) is provided. Therefore, even if the electrode (6) is present on the side of the upper pole (9a), the secondary electrons generated from the sample (15) in almost all directions are once brought close to the optical axis by the strong magnetic field of the objective lens (8). After it converges and becomes almost parallel to the optical axis, it is trapped by the secondary electron detector (5) which is normally kept at a positive potential. Therefore, the axial chromatic aberration of the charged particle beam incident by the electrode (6) is reduced, and the secondary electron capturing efficiency is good, and a detection image with a good SN ratio can be obtained.

【0011】また、対物レンズ(8)の上極(9a)と
2次電子検出器(5)との間に、荷電粒子線を試料(1
5)上で走査する走査用偏向コイル(7)を設ける場合
には、走査用偏向コイル(7)は2次電子検出器(5)
より下にあるので、例えば2次電子検出器(5)のある
空間に強い偏向電界が発生していても、電子線は視野走
査とは無関係に同じ場所を通るため、視野歪みの発生が
なく、走査に対応してダイナミックに非点補正を行う必
要がない。
A charged particle beam is applied between the upper pole (9a) of the objective lens (8) and the secondary electron detector (5) to the sample (1).
5) When a scanning deflection coil (7) for scanning is provided, the scanning deflection coil (7) is a secondary electron detector (5).
Since it is below, even if a strong deflection electric field is generated in a space where the secondary electron detector (5) is present, the electron beam passes through the same place regardless of the visual field scanning, so that no visual field distortion occurs. , It is not necessary to dynamically perform astigmatism correction corresponding to scanning.

【0012】また、2次電子検出器(5)の2次電子入
射口の周囲の少なくとも一部を試料(15)の電位以下
の電位が印加された電極(4)で覆う場合には、その電
極(4)によって2次電子が押し戻されるため、試料
(15)からの2次電子が2次電子検出器(5)に効率
良く入射する。更に、電極(4)を含んで形成される静
電レンズによる収束作用で荷電粒子線が光源像を形成し
ないようにする場合には、1次電子の軸上色収差係数が
より小さく抑えられる。
When at least part of the periphery of the secondary electron entrance of the secondary electron detector (5) is covered with the electrode (4) to which a potential lower than that of the sample (15) is applied, Since the secondary electrons are pushed back by the electrode (4), the secondary electrons from the sample (15) are efficiently incident on the secondary electron detector (5). Further, in the case where the charged particle beam does not form a light source image due to the converging action of the electrostatic lens formed including the electrode (4), the axial chromatic aberration coefficient of the primary electron can be suppressed to a smaller value.

【0013】[0013]

【実施例】以下、本発明による荷電粒子線装置の一実施
例につき、図面を参照して説明する。本例は走査型電子
顕微鏡に本発明を適用したものである。図1は、本例の
走査型電子顕微鏡の主要部の断面図を示し、この図1に
おいて、電子銃1から放出された電子線(1次電子)1
3は、電子銃1の下部に配置され、光軸AXを囲むよう
に配置された円筒型で出口がつば状に広がったアノード
電極3で約10.5kVに加速される。加速された電子
線は、アノード電極3の外側に配置されたコンデンサー
レンズ2によりクロスオーバ(光源像)19を作り、こ
のクロスオーバ19からの電子線は、約10kVの電位
のアノード電極3とアノード電極3の下部に配置された
約−100Vの電位をもつ電極4とによって作られる静
電レンズでほぼ平行ビームにされる。電極4は、その中
央部に電子線を通過させる貫通孔を持ち、後述する2次
電子線検出器の導入開口部を囲む開口を有する下向きの
蓋状に形成されている。平行ビームとなった電子線は、
減速電界型で且つ2つの磁極の間に試料を配置するイン
レンズ型の対物レンズ8により試料テーブル11のほぼ
中央部に載置される試料15の上面に収束される。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the charged particle beam device according to the present invention will be described below with reference to the drawings. In this example, the present invention is applied to a scanning electron microscope. FIG. 1 shows a sectional view of the main part of the scanning electron microscope of this example. In FIG. 1, an electron beam (primary electron) 1 emitted from an electron gun 1 is shown.
Reference numeral 3 denotes a cylindrical anode electrode 3 arranged below the electron gun 1 and surrounding the optical axis AX and having a widened outlet, and is accelerated to about 10.5 kV. The accelerated electron beam makes a crossover (light source image) 19 by the condenser lens 2 arranged outside the anode electrode 3, and the electron beam from this crossover 19 is at a potential of about 10 kV and the anode electrode 3 and the anode. An electrostatic lens made by an electrode 4 having a potential of about −100 V arranged under the electrode 3 makes a substantially parallel beam. The electrode 4 has a through hole at its center for passing an electron beam, and is formed in a downward lid shape having an opening surrounding an introduction opening of a secondary electron beam detector described later. The electron beam that became a parallel beam
The deceleration electric field type objective lens 8 of the in-lens type in which the sample is arranged between the two magnetic poles is focused on the upper surface of the sample 15 placed on the sample table 11 substantially in the center thereof.

【0014】対物レンズ8は、円筒型の空間16を持
ち、上部が1次電子及び2次電子が通過する円形の貫通
孔の周囲の上極9aとなり、下部が空間16側に突き出
した円柱状の下極9bとなった円筒状のコア9と、下極
9bの周囲に装着されたコイル10とから構成される電
磁レンズであり、1次電子はこの2つの磁極9a,9b
により生ずる磁界により試料15上に収束される。対物
レンズ8の下極9bの直上には、試料テーブル11が水
平に配置され、試料テーブル11は試料テーブル11の
底部に固定された駆動装置17により移動できるように
なっている。また、試料テーブル11はアースされてお
り、試料15の電位はグランド電位(0V)である。
The objective lens 8 has a cylindrical space 16, the upper part of which is the upper pole 9a around a circular through hole through which the primary and secondary electrons pass, and the lower part of which is a columnar shape protruding toward the space 16 side. Is an electromagnetic lens composed of a cylindrical core 9 serving as the lower pole 9b and a coil 10 mounted around the lower pole 9b, and the primary electrons are the two magnetic poles 9a and 9b.
Is focused on the sample 15 by the magnetic field generated by. A sample table 11 is horizontally arranged directly above the lower pole 9b of the objective lens 8, and the sample table 11 can be moved by a driving device 17 fixed to the bottom of the sample table 11. The sample table 11 is grounded, and the potential of the sample 15 is the ground potential (0V).

【0015】更に、1次電子及び2次電子が通過する対
物レンズ8の上極9aの内側には、絶縁碍子12を介し
て円筒状で試料側がつば状に広がったライナチューブ6
が固定されている。ライナチューブ6には、1次電子の
速度を減速するため約10kVの電圧が印加されてい
る。更に、上極9aの端部上面には、1次電子で試料1
5の表面を走査するための走査用の偏向器7が設けられ
ている。
Further, inside the upper pole 9a of the objective lens 8 through which the primary and secondary electrons pass, a liner tube 6 having a cylindrical shape and a sample side expanding like a brim through an insulator 12 is provided.
Has been fixed. A voltage of about 10 kV is applied to the liner tube 6 to reduce the speed of the primary electrons. Furthermore, on the upper surface of the end of the upper electrode 9a, the sample 1
A scanning deflector 7 for scanning the surface of the optical disc 5 is provided.

【0016】電子線の照射により試料15から発生する
2次電子はライナチューブ6に印加された電圧により生
ずる電界で加速されながら対物レンズ8による磁界で曲
げられ、ライナチューブ6には入射することなく、仮想
面14より上部に進む。仮想面14の高さはライナチュ
ーブ6のほぼ中間位置である。対物レンズ8の上極9a
の上部で、且つ仮想面14から所定の距離L(図2参
照)だけ離れた上部で、高い位置に、光軸AXから所定
の距離で2次電子検出器5が配置されている。更に、2
次電子検出器5の前側面は、電極4の側面の開口に挿通
されている。
Secondary electrons generated from the sample 15 by the irradiation of the electron beam are bent by the magnetic field of the objective lens 8 while being accelerated by the electric field generated by the voltage applied to the liner tube 6, and do not enter the liner tube 6. , Above the virtual plane 14. The height of the imaginary surface 14 is approximately the middle position of the liner tube 6. Upper pole 9a of objective lens 8
The secondary electron detector 5 is arranged at a predetermined distance from the optical axis AX at a high position above the virtual surface 14 and at a predetermined distance L (see FIG. 2) from the virtual surface 14. Furthermore, 2
The front side surface of the secondary electron detector 5 is inserted through the opening on the side surface of the electrode 4.

【0017】2次電子検出器5は、2次電子の導入開口
部に設けられた前後2枚のメッシュ5a,5bと、フォ
トマルチプライア5cとより構成されている。2枚のメ
ッシュ5a,5bには、2次電子線を捕獲するため、そ
れぞれ約20kV,10kVの電圧が印加されている。
高電位の2枚のメッシュ5a,5bにより捕獲された2
次電子はフォトマルチプライア5cの受光面に入射す
る。なお、メッシュ5a,5bは2次電子入射口の全面
に設ける必要はなく、その一部に設けるだけでもよい。
The secondary electron detector 5 is composed of two meshes 5a and 5b in the front and rear, which are provided in the secondary electron introduction opening, and a photomultiplier 5c. To capture the secondary electron beam, voltages of about 20 kV and 10 kV are applied to the two meshes 5a and 5b, respectively.
2 captured by two high-potential meshes 5a and 5b
Secondary electrons enter the light-receiving surface of the photomultiplier 5c. The meshes 5a and 5b need not be provided on the entire surface of the secondary electron entrance, but may be provided only on a part thereof.

【0018】次に、本例の荷電粒子線装置の動作につき
説明する。上述のように、電子銃1から射出された1次
電子は、コンデンサレンズ2でクロスオーバ19を形成
した後、約10kVの高電圧が印加されたアノード電極
3により加速されると共に、アノード電極3と−100
Vの電圧が印加された電極4とにより作られる静電レン
ズにより平行ビームとなり、2次電子検出器5の前方を
通過して対物レンズ8に入射する。この場合、2次電子
検出器5のメッシュ5aには2次電子を捕獲するため約
20kVの高電圧が印加されているが、1次電子は高速
に加速されているため、2次電子検出器5によりその光
路が殆ど折り曲げられることなく直進して対物レンズ8
に入射する。
Next, the operation of the charged particle beam device of this example will be described. As described above, the primary electron emitted from the electron gun 1 is accelerated by the anode electrode 3 to which a high voltage of about 10 kV is applied after the crossover 19 is formed by the condenser lens 2 and the anode electrode 3 And -100
An electrostatic lens formed by the electrode 4 to which a voltage of V is applied forms a parallel beam, which passes through the front of the secondary electron detector 5 and enters the objective lens 8. In this case, a high voltage of about 20 kV is applied to the mesh 5a of the secondary electron detector 5 to capture the secondary electrons, but the primary electrons are accelerated at a high speed, so the secondary electron detector The optical path of the objective lens 8 is almost straightened by 5 and goes straight.
Incident on.

【0019】また、クロスオーバ19とアノード電極3
及び電極4が作る静電レンズの主面間との距離をこの静
電レンズの焦点距離と等しいかそれより短くしたので、
1次電子がこの静電レンズと対物レンズ8との間でクロ
スオーバを作らない。従って、1次電子の軸上色収差係
数が大きくなることはなく、本例では、色収差係数が
0.7mmの高分解能の1次ビームを作ることができ
た。次に、試料15の表面上には対物レンズ8の2つの
磁極9a,9bによる強磁場が存在し、試料から全ての
方向に放出された2次電子は、この磁場の収束作用で光
軸AX近くに収束されて、仮想面14の上に進み、ビー
ムの向きが光軸AXと平行に近い角度に揃えられた後、
対物レンズ8の上極9aの上部の空間へ出てくる。この
空間では、上面、側面が電極4により約−100Vの電
位に保たれ、2次電子検出器5のメッシュ5aが約+2
0kVの電位に保たれている。従って、仮想面14から
の2次電子は効率的に2次電子検出器5に入射する。こ
の場合、電極4の電位(−100V)が試料15の電位
(グランド電位)より低いため、2次電子は効率良く2
次電子検出器5に捕らえられる。
Further, the crossover 19 and the anode electrode 3
Since the distance between the main surface of the electrostatic lens formed by the electrode 4 and the electrode 4 is equal to or shorter than the focal length of this electrostatic lens,
Primary electrons do not create a crossover between this electrostatic lens and the objective lens 8. Therefore, the axial chromatic aberration coefficient of primary electrons does not increase, and in this example, a high-resolution primary beam with a chromatic aberration coefficient of 0.7 mm could be produced. Next, a strong magnetic field due to the two magnetic poles 9a and 9b of the objective lens 8 exists on the surface of the sample 15, and the secondary electrons emitted from the sample in all directions are converged by this magnetic field to cause the optical axis AX. After being converged in the vicinity and traveling on the virtual surface 14 and the direction of the beam is aligned at an angle close to parallel to the optical axis AX,
It emerges into the space above the upper pole 9a of the objective lens 8. In this space, the upper and side surfaces are kept at a potential of about −100 V by the electrode 4, and the mesh 5 a of the secondary electron detector 5 is about +2.
The potential is kept at 0 kV. Therefore, the secondary electrons from the virtual surface 14 efficiently enter the secondary electron detector 5. In this case, since the potential of the electrode 4 (−100 V) is lower than the potential of the sample 15 (ground potential), the secondary electrons are efficiently converted to 2
It is captured by the secondary electron detector 5.

【0020】図2は、仮想面14から2次電子検出器5
に至る2次電子の軌道の一例を示し、横軸は光軸AXか
らの距離R(mm)、縦軸は仮想面14からの高さHを
表している。この図2は、光軸AXから1mmずれた位
置から光軸AXに対する角度が±8°の方向に発散する
2次電子の軌道を計算して表したものであるが、全ての
2次電子は軌道18に示すように、−100Vの電圧が
印加された電極4により上面及び左側面に進めず、仮想
面14からその中心部がL(本例では、Lは2〜5c
m)だけ高い位置に配置された2次電子検出器5に入射
している。
FIG. 2 shows the secondary electron detector 5 from the virtual surface 14.
Shows an example of the orbit of the secondary electrons leading to, the horizontal axis represents the distance R (mm) from the optical axis AX, and the vertical axis represents the height H from the virtual surface 14. This FIG. 2 shows the orbits of secondary electrons diverging from the position deviated from the optical axis AX by 1 mm in the direction of an angle of ± 8 ° with respect to the optical axis AX, but all the secondary electrons are As shown in the orbit 18, the electrode 4 to which a voltage of −100 V is applied does not advance to the upper surface and the left side surface, and the central portion of the virtual surface 14 is L (in this example, L is 2 to 5 c
It is incident on the secondary electron detector 5 arranged at a position higher by m).

【0021】以上のように、本例の荷電粒子線装置によ
れば、試料15から発生した2次電子は、殆ど100%
の割合で2次電子検出器5に入るため、SN比の良い試
料15の観察像が得られる。更に、走査用の偏向器7
は、2次電子検出器5より下に配置されているので、非
点補正を走査に応じてダイナミックに行う必要はない。
また、2次電子検出器5が配置された空間は強い偏向電
界が発生しているが、視野走査とは無関係に同じ場所を
通るため、視野歪みの発生や、視野によって非点補正を
変える必要はない。
As described above, according to the charged particle beam apparatus of this example, almost 100% of the secondary electrons generated from the sample 15 are generated.
Since it enters the secondary electron detector 5 at a ratio of, the observation image of the sample 15 having a good SN ratio can be obtained. Further, the deflector 7 for scanning
Is arranged below the secondary electron detector 5, it is not necessary to dynamically perform astigmatism correction according to scanning.
In addition, a strong deflection electric field is generated in the space where the secondary electron detector 5 is arranged, but since it passes through the same place regardless of the visual field scanning, it is necessary to generate visual field distortion or change the astigmatism correction depending on the visual field. There is no.

【0022】なお、本例ではライナチューブ6に10k
Vの電圧を印加し、試料15をグランド電位にしたが、
ライナチューブ6を接地(アース)してグランド電位に
保ち、試料15にマイナスの電位を持たせてもよい。そ
の場合、電極4の電位は試料15の電位より更に低い電
位にするのが好ましい。更に、本発明は上述実施例に限
定されず、例えば線幅測定機やマイクロアナライザ等に
適用することで種々の構成を取り得る。
In this example, the liner tube 6 has 10 k
The voltage of V was applied to bring the sample 15 to the ground potential.
The liner tube 6 may be grounded (grounded) to maintain the ground potential, and the sample 15 may have a negative potential. In that case, the potential of the electrode 4 is preferably lower than that of the sample 15. Furthermore, the present invention is not limited to the above-mentioned embodiment, and various configurations can be taken by applying it to, for example, a line width measuring machine, a micro analyzer or the like.

【0023】[0023]

【発明の効果】本発明の荷電粒子線装置によれば、試料
から発散する2次電子は対物レンズの磁界により電極の
上部に進んだ後、2次電子検出器に捕捉される。従っ
て、電極で1次荷電粒子の軸上色収差を改善した上で、
2次電子の捕捉効率が良く、SN比の良い検出像が得ら
れる利点がある。
According to the charged particle beam device of the present invention, the secondary electrons diverging from the sample travel to the upper part of the electrode by the magnetic field of the objective lens and then are captured by the secondary electron detector. Therefore, after improving the axial chromatic aberration of the primary charged particles at the electrode,
There are advantages that the secondary electron capturing efficiency is good and a detection image with a good S / N ratio can be obtained.

【0024】また、対物レンズの上極と2次電子検出器
との間に、荷電粒子線を試料上で走査する走査用偏向コ
イルを設ける場合には、電子線は視野走査とは無関係に
同じ場所を通るため、視野歪みの発生がなく、非点補正
を走査に応じてダイナミックに行う必要がない。また、
2次電子検出器の2次電子入射口の周囲の少なくとも一
部を試料の電位以下の電位が印加された電極で覆う場合
には、試料からの2次電子が2次電子検出器に効率良く
入射し、検出信号のSN比が向上する。
When a scanning deflection coil for scanning the charged particle beam on the sample is provided between the upper pole of the objective lens and the secondary electron detector, the electron beam is the same regardless of the field scanning. Since it passes through a place, no visual field distortion occurs and it is not necessary to dynamically perform astigmatism correction according to scanning. Also,
When at least a part of the periphery of the secondary electron entrance of the secondary electron detector is covered with an electrode to which a potential equal to or lower than the potential of the sample is applied, the secondary electrons from the sample are efficiently transferred to the secondary electron detector. Upon incidence, the SN ratio of the detection signal is improved.

【0025】更に、電極を含んで形成される静電レンズ
による収束作用で荷電粒子線が光源像を形成しないよう
にする場合には、1次荷電粒子の軸上色収差係数が小さ
く抑えられ、高分解能で収束できる。
Further, when the charged particle beam is prevented from forming a light source image by the converging action of the electrostatic lens formed including the electrodes, the axial chromatic aberration coefficient of the primary charged particles can be suppressed to a small value, and the high value can be obtained. It can converge with resolution.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明による荷電粒子線装置の一実施例として
の走査型電子顕微鏡の概略構成を示す断面図である。
FIG. 1 is a sectional view showing a schematic configuration of a scanning electron microscope as an embodiment of a charged particle beam device according to the present invention.

【図2】図1の仮想面14から2次電子検出器5に至る
2次電子の軌道の一例を示す図である。
FIG. 2 is a diagram showing an example of trajectories of secondary electrons from a virtual plane 14 in FIG. 1 to a secondary electron detector 5.

【符号の説明】[Explanation of symbols]

1 電子銃 2 コンデンサレンズ 3 アノード電極 4 電極 5 2次電子検出器 6 ライナチューブ 7 走査用の偏向器 8 対物レンズ 9 コア 9a 対物レンズ8の上極 9b 対物レンズ8の下極 10 対物レンズ8のコイル 11 試料テーブル 13 1次電子 14 仮想面 15 試料 DESCRIPTION OF SYMBOLS 1 Electron gun 2 Condenser lens 3 Anode electrode 4 Electrode 5 Secondary electron detector 6 Liner tube 7 Deflector for scanning 8 Objective lens 9 Core 9a Upper pole of objective lens 8 9b Lower pole of objective lens 8 Of objective lens 8 Coil 11 Sample table 13 Primary electron 14 Virtual plane 15 Sample

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 荷電粒子線を収束させるための対物レン
ズの対向する2つの磁極間に前記試料を配置し、前記対
物レンズの上極側に配置された電極と前記試料との間に
電界を形成し、前記試料上に前記荷電粒子線を収束させ
る荷電粒子線装置において、 前記対物レンズの上極の上部に、前記荷電粒子線の照射
により前記試料から発生する2次電子を検出する2次電
子検出器を設けたことを特徴とする荷電粒子線装置。
1. A sample is arranged between two opposing magnetic poles of an objective lens for converging a charged particle beam, and an electric field is formed between an electrode arranged on the upper pole side of the objective lens and the sample. In a charged particle beam device for forming and converging the charged particle beam on the sample, a secondary electron for detecting a secondary electron generated from the sample by irradiation of the charged particle beam on an upper pole of the objective lens. A charged particle beam device comprising an electron detector.
【請求項2】 前記対物レンズの上極と前記2次電子検
出器との間に、前記荷電粒子線を前記試料上で走査する
走査用偏向コイルを設けたことを特徴とする請求項1記
載の荷電粒子線装置。
2. A scanning deflection coil for scanning the charged particle beam on the sample is provided between the upper pole of the objective lens and the secondary electron detector. Charged particle beam device.
【請求項3】 前記2次電子検出器の2次電子入射口の
周囲の少なくとも一部を前記試料の電位以下の電位が印
加された補助電極で覆うことを特徴とする請求項1又は
2記載の荷電粒子線装置。
3. The secondary electrode detector according to claim 1, wherein at least part of the periphery of the secondary electron entrance of the secondary electron detector is covered with an auxiliary electrode to which a potential lower than the potential of the sample is applied. Charged particle beam device.
【請求項4】 前記補助電極を含んで形成される静電レ
ンズによる収束作用で前記荷電粒子線が光源像を形成し
ないことを特徴とする請求項3記載の荷電粒子線装置。
4. The charged particle beam device according to claim 3, wherein the charged particle beam does not form a light source image due to a converging action of an electrostatic lens formed including the auxiliary electrode.
JP6271069A 1994-11-04 1994-11-04 Charged particle beam equipment Withdrawn JPH08138611A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6271069A JPH08138611A (en) 1994-11-04 1994-11-04 Charged particle beam equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6271069A JPH08138611A (en) 1994-11-04 1994-11-04 Charged particle beam equipment

Publications (1)

Publication Number Publication Date
JPH08138611A true JPH08138611A (en) 1996-05-31

Family

ID=17494961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6271069A Withdrawn JPH08138611A (en) 1994-11-04 1994-11-04 Charged particle beam equipment

Country Status (1)

Country Link
JP (1) JPH08138611A (en)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10134754A (en) * 1996-11-05 1998-05-22 Jeol Ltd Scanning electron microscope
JP2001110351A (en) * 1999-10-05 2001-04-20 Hitachi Ltd Scanning electron microscope
JP2003532256A (en) * 2000-04-24 2003-10-28 フェイ カンパニ Collection of secondary electrons through the objective of a scanning electron microscope
US7049585B2 (en) 2000-07-27 2006-05-23 Ebara Corporation Sheet beam-type testing apparatus
US7135676B2 (en) 2000-06-27 2006-11-14 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US7241993B2 (en) 2000-06-27 2007-07-10 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
JP4302316B2 (en) * 1998-03-09 2009-07-22 株式会社日立製作所 Scanning electron microscope
US8637820B2 (en) 2010-03-02 2014-01-28 Hitachi High-Technologies Corporation Scanning electron microscope and inspection method using same
WO2019064496A1 (en) * 2017-09-29 2019-04-04 株式会社日立ハイテクノロジーズ Scanning electron microscope
JP2022542692A (en) * 2019-07-31 2022-10-06 カール ツァイス マルチセム ゲーエムベーハー Particle beam system and its use for flexible setting of current intensity of individual particle beams
US20240029995A1 (en) * 2021-03-31 2024-01-25 Asml Netherlands B.V. Electron-optical system and method of operating an electron-optical system

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10134754A (en) * 1996-11-05 1998-05-22 Jeol Ltd Scanning electron microscope
JP4302316B2 (en) * 1998-03-09 2009-07-22 株式会社日立製作所 Scanning electron microscope
JP2001110351A (en) * 1999-10-05 2001-04-20 Hitachi Ltd Scanning electron microscope
JP2003532256A (en) * 2000-04-24 2003-10-28 フェイ カンパニ Collection of secondary electrons through the objective of a scanning electron microscope
US7241993B2 (en) 2000-06-27 2007-07-10 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US7135676B2 (en) 2000-06-27 2006-11-14 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US8053726B2 (en) 2000-06-27 2011-11-08 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US7297949B2 (en) 2000-06-27 2007-11-20 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US7411191B2 (en) 2000-06-27 2008-08-12 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US8368031B2 (en) 2000-06-27 2013-02-05 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US8803103B2 (en) 2000-06-27 2014-08-12 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US7601972B2 (en) 2000-06-27 2009-10-13 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US9368314B2 (en) 2000-06-27 2016-06-14 Ebara Corporation Inspection system by charged particle beam and method of manufacturing devices using the system
US7829871B2 (en) 2000-07-27 2010-11-09 Ebara Corporation Sheet beam-type testing apparatus
US7417236B2 (en) 2000-07-27 2008-08-26 Ebara Corporation Sheet beam-type testing apparatus
US7109484B2 (en) 2000-07-27 2006-09-19 Ebara Corporation Sheet beam-type inspection apparatus
US7049585B2 (en) 2000-07-27 2006-05-23 Ebara Corporation Sheet beam-type testing apparatus
US8637820B2 (en) 2010-03-02 2014-01-28 Hitachi High-Technologies Corporation Scanning electron microscope and inspection method using same
WO2019064496A1 (en) * 2017-09-29 2019-04-04 株式会社日立ハイテクノロジーズ Scanning electron microscope
CN111108579A (en) * 2017-09-29 2020-05-05 株式会社日立高新技术 scanning electron microscope
JPWO2019064496A1 (en) * 2017-09-29 2020-10-01 株式会社日立ハイテク Scanning electron microscope
US11189457B2 (en) 2017-09-29 2021-11-30 Hitachi High-Tech Corporation Scanning electron microscope
DE112017007822B4 (en) 2017-09-29 2023-06-01 Hitachi High-Technologies Corporation SCANNING ELECTRON MICROSCOPE
JP2022542692A (en) * 2019-07-31 2022-10-06 カール ツァイス マルチセム ゲーエムベーハー Particle beam system and its use for flexible setting of current intensity of individual particle beams
US12119204B2 (en) 2019-07-31 2024-10-15 Carl Zeiss Multisem Gmbh Particle beam system and the use thereof for flexibly setting the current intensity of individual particle beams
US20240029995A1 (en) * 2021-03-31 2024-01-25 Asml Netherlands B.V. Electron-optical system and method of operating an electron-optical system

Similar Documents

Publication Publication Date Title
CN109300759B (en) Low energy scanning electron microscope system, scanning electron microscope system and sample detection method
JP2919170B2 (en) Scanning electron microscope
JP4215282B2 (en) SEM equipped with electrostatic objective lens and electrical scanning device
US6407387B1 (en) Particle beam apparatus
JP4037533B2 (en) Particle beam equipment
JP4300710B2 (en) Scanning electron microscope
US20100102227A1 (en) Electron beam apparatus
JPH06132002A (en) Scanning electron microscope
JPH0536371A (en) Particle beam device
US6667478B2 (en) Particle beam apparatus
JPH0727556Y2 (en) Charged particle energy analyzer
JPH08138611A (en) Charged particle beam equipment
JP4156744B2 (en) Charged particle beam apparatus and test piece inspection method
JPH0935679A (en) Scanning electron microscope
JP2000149850A (en) Charged particle beam equipment
JP2002025492A (en) Method and apparatus for imaging a sample using a low profile electron detector for a charged particle beam imager including an electrostatic mirror
JPH0773841A (en) Scanning electron microscope and secondary electron detection system
US7394069B1 (en) Large-field scanning of charged particles
JP2001319612A (en) Direct mapping electron microscope
JPH0319166Y2 (en)
JP3101141B2 (en) Electron beam equipment
JPH0864163A (en) Charged particle beam device
JPH0236207Y2 (en)
JPS60130044A (en) Scanning type electron microscope
JP3814968B2 (en) Inspection device

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20020115