JPH0789475B2 - Atom or molecule supply cylinder - Google Patents
Atom or molecule supply cylinderInfo
- Publication number
- JPH0789475B2 JPH0789475B2 JP6636593A JP6636593A JPH0789475B2 JP H0789475 B2 JPH0789475 B2 JP H0789475B2 JP 6636593 A JP6636593 A JP 6636593A JP 6636593 A JP6636593 A JP 6636593A JP H0789475 B2 JPH0789475 B2 JP H0789475B2
- Authority
- JP
- Japan
- Prior art keywords
- atoms
- atom
- molecules
- probe
- molecule
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 17
- 239000000523 sample Substances 0.000 claims description 16
- 239000002041 carbon nanotube Substances 0.000 claims description 15
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 15
- 230000005641 tunneling Effects 0.000 claims description 4
- 125000004429 atom Chemical group 0.000 description 51
- 239000013078 crystal Substances 0.000 description 22
- 239000002071 nanotube Substances 0.000 description 21
- 239000000758 substrate Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052733 gallium Inorganic materials 0.000 description 5
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Description
【0001】[0001]
【産業上の利用分野】本発明は、原子または分子の操作
により微細な結晶などを作製する装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for producing fine crystals by manipulating atoms or molecules.
【0002】[0002]
【従来の技術】原子を1個ずつ自由に操作して、これま
で出来なかった新しい結晶構造を作成することは、素子
の高性能化や新しい素子の開発にとって重要であり、強
く望まれている手法である。原子を1個ずつ操作して微
細な結晶を作製する方法としては、これまでは、STM
(Scannig Tunneling Micros
cope:走査トンネル顕微鏡)と類似の装置を用い、
プローブを原子操作に用いていた。図3に従来の原子操
作の基本的な方法を示す。先端が原子オーダーで鋭端な
STMプローブ4は先端を原子程度のサイズにまで尖ら
せたものである。原子操作方法は次のようになる。まず
原子浴5にSTMプローブ4を移動し、原子3をプロー
ブの先に捉える。次に基板2の上の結晶成長する場所に
移動し、そこで針先の原子3を放出することによって原
子1個を所定の場所におき、これを繰り返すことにより
複数個の原子の操作を行っていた(イーグラー( D.
M.Eigler )他、ネイチャー(Nature)
第44巻, 524頁、1990年)。2. Description of the Related Art It is important and highly desired to freely manipulate atoms one by one to create a new crystal structure which has not been possible until now, because it is important for improving the performance of devices and developing new devices. It is a technique. Until now, STM has been used as a method for producing fine crystals by manipulating atoms one by one.
(Scanning Tunneling Micros
Cope: scanning tunneling microscope)
The probe was used for atomic manipulation. FIG. 3 shows a basic method of conventional atomic operation. The tip of the STM probe 4 having a sharp tip on the order of atoms is sharpened to the size of an atom. The atomic manipulation method is as follows. First, the STM probe 4 is moved to the atomic bath 5, and the atom 3 is captured at the tip of the probe. Next, the substrate is moved to a position on the substrate 2 where the crystal grows, and the atom 3 at the tip of the needle is ejected to place one atom at a predetermined position. By repeating this, a plurality of atoms are manipulated. (Eggler (D.
M. Eigler) and others, Nature
44, 524, 1990).
【0003】[0003]
【発明が解決しようとする課題】しかし、前記の方法で
は、原子浴と結晶成長場所の距離が離れており、かつ原
子を1個ずつ操作するために、それらの間のプローブの
移動を頻繁に行わねばならず、結晶成長には極めて長時
間を要するという問題があった。例えば微細結晶構造を
短時間で作製するためには原子1個ずつを効率よく供給
する部品が必要となるが、従来このような部品は知られ
ていない。However, in the above method, the distance between the atomic bath and the crystal growth site is large, and since the atoms are manipulated one by one, the movement of the probe between them is frequently performed. It has to be carried out, and there has been a problem that crystal growth requires an extremely long time. For example, in order to fabricate a fine crystal structure in a short time, a component that efficiently supplies one atom at a time is required, but such a component has not been known so far.
【0004】本発明の目的は、原子を1個ずつしかも短
時間に操作できる原子供給部品を提供することである。It is an object of the present invention to provide an atom supply component which can operate atoms one by one and in a short time.
【0005】本願発明によれば、原子または分子が一度
に一個通れる程度の内径をもったカーボンナノチューブ
を用いることによって、原子を一個ずつ、しかも連続的
に供給することが可能となった。According to the present invention, an atom or molecule once
By using carbon nanotubes with an inner diameter that allows one to pass through, it became possible to supply atoms one by one and continuously.
【0006】また、原子または分子が一度に一個通れる
程度の内径をもったカーボンナノチューブに、それより
大きな内径をもったカーボンナノチューブを連続的につ
なげた構成とする事で更に効率のよい原子または分子の
供給が可能となる。Also, one atom or molecule can pass through at a time
By providing a structure in which carbon nanotubes having a similar inner diameter are continuously connected to carbon nanotubes having a larger inner diameter , it is possible to more efficiently supply atoms or molecules .
【0007】成長させる際にはカーボンナノチューブの
近傍に走査トンネル顕微鏡あるいは原子間力顕微鏡のプ
ローブを配置しておき、このプローブで成長させたい位
置を特定する。またバンドギャップの狭いカーボンナノ
チューブを使えばチューブに電流を流せるのでチューブ
自体を走査トンネル顕微鏡のプローブとして用いること
ができる。When growing, a probe of a scanning tunnel microscope or an atomic force microscope is placed in the vicinity of the carbon nanotube, and the position to grow is specified by this probe. Also, if carbon nanotubes with a narrow band gap are used, an electric current can be passed through the tube, so the tube itself can be used as a probe for a scanning tunneling microscope.
【0008】カーボンナノチューブ(以下ナノチューブ
あるいはチューブと略称)は、炭素原子が共有結合する
ことによってできたベンゼン殻様の六角形の分子を構成
単位とする平面的な網面のネットワーク(グラファイト
層)が、原子や分子が一度に一個が通れる程度の内径に
丸められて形成された円筒状高分子である。化学的には
非常に安定であり、他の原子との反応性が低い。そのた
め、ナノチューブの中を化学反応をおこさずに原子を通
すことが可能である。従って、このナノチューブの先端
に結晶成長を行う部分をおき、先端から連続的に原子や
分子を放出し、結晶を作製することが可能である。Carbon nanotubes (hereinafter abbreviated as nanotubes or tubes) have a planar network network (graphite layer) having benzene shell-like hexagonal molecules formed by covalently bonding carbon atoms as constituent units. , A cylindrical polymer formed by rolling an atom or molecule into an inner diameter such that one atom or molecule can pass through at a time. It is chemically very stable and has low reactivity with other atoms. Therefore, it is possible to pass atoms through the nanotubes without causing a chemical reaction. Therefore, it is possible to form a crystal by placing a portion for crystal growth at the tip of the nanotube and continuously emitting atoms or molecules from the tip.
【0009】本発明においては、原子や分子をナノチュ
ーブの一方の端から供給し、チューブの中を通し、他方
の端から放出することにより結晶成長を行う。このた
め、ナノチューブの先端を、結晶成長する部分に持って
いけば、先端から連続的に原子を放出し、結晶を作成す
ることができる。In the present invention, crystals are grown by supplying atoms and molecules from one end of the nanotube, passing through the tube, and discharging from the other end. Therefore, if the tip of the nanotube is brought to the portion where the crystal grows, atoms can be continuously emitted from the tip to form a crystal.
【0010】原子の放出は、反対側の端を、大きな内径
に変換するアダプターに接続し、それを同類の原子や分
子の蒸気圧の圧力源に接続して圧力をかければよい。ア
ダプターは次のように作製する。例えば円筒状のグラフ
ァイトの一方の端を、電子線またはイオンビームなどで
加工し、カーボンナノチューブの外形程度の大きさの穴
をあける。他方の端はドライエッチングあるいは機械的
に削り、数十μm程度またはそれ以上の大きさの穴を深
くあけ、両方の穴をつなげることにより作製することが
できる。このアダプターとカーボンナノチューブの接続
は、カーボンナノチューブをこのアダプターの穴に差し
込めばよい。あるいは上述のような穴をあけたアダプタ
ーをナノチューブを成長させるチャンバー内に小さな穴
の方を上にして入れておき、放電、CVD法等でナノチ
ューブを成長させると、穴の上にナノチューブが形成さ
れたものができるのでそれを用いてもよい。また同類の
原子や分子の蒸気圧の圧力源とは例えば金属の場合は分
子線セルのようなものを用いればよい。つまりるつぼに
金属を入れて加熱して液体状にするとそこから金属蒸気
が発生するのでそれを使えばよい。またアダプター上に
抵抗線を形成しておき電流を流してヒーターとする。The emission of atoms can be accomplished by connecting the opposite end to an adapter that converts to a large inner diameter and connecting it to a pressure source of the vapor pressure of like atoms and molecules. . The adapter is manufactured as follows. For example, one end of cylindrical graphite is processed with an electron beam or an ion beam to form a hole having a size approximately equal to that of the carbon nanotube. The other end can be manufactured by dry etching or mechanically shaving, making a hole with a size of about several tens of μm or more deeply, and connecting both holes. To connect the adapter to the carbon nanotube, the carbon nanotube may be inserted into the hole of the adapter. Alternatively, the adapter with the holes as described above is placed in the chamber for growing the nanotubes with the small holes facing up, and the nanotubes are formed on the holes when the nanotubes are grown by discharge, CVD method, or the like. You can use it because you can create something. Further, as the pressure source of vapor pressure of atoms and molecules of the same kind, for example, in the case of metal, a molecular beam cell may be used. In other words, if you put metal in the crucible and heat it into a liquid state, metal vapor will be generated from it, so you can use it. In addition, a resistance wire is formed on the adapter and an electric current is applied to make it a heater.
【0011】原子や分子を一個ずつ放出するには次のよ
うにすればよい。あらかじめ原子、分子が放出する最低
の圧力を調べておき、ヒーターにパルス的な電流を流
し、蒸気圧をこの最低蒸気圧の上下でパルス的に変え、
かつ蒸気圧の上下幅を適切にとることにより、原子を一
パルスで一個の割合で放出することが可能である。上下
幅は次のように決める。まず適当な上下幅の蒸気圧で原
子、分子を放出してみて、基板上にSTM、AFM(A
tomic Force Microscope:原子
間力顕微鏡)等を走査して原子が何個放出されたかを調
べ、それをフィードバックして一個放出する上下幅を決
める。To release atoms and molecules one by one, the following procedure should be performed. The minimum pressure released by atoms and molecules is investigated in advance, a pulse-like electric current is passed through the heater, and the vapor pressure is changed in pulses above and below this minimum vapor pressure.
Moreover, it is possible to release one atom at a time with one pulse by appropriately setting the upper and lower widths of the vapor pressure. The vertical width is determined as follows. First, try to release atoms and molecules with an appropriate vapor pressure of the upper and lower widths, and then STM, AFM (A
The atomic force microscope (Atomic Force Microscope) and the like are scanned to check how many atoms are emitted, and the feedback is used to determine the vertical width for emission of one atom.
【0012】放出したい場所に円筒を移動させるには次
のようにすればよい。In order to move the cylinder to the place where it is desired to discharge it, the following may be done.
【0013】飯島ら(固体物理、第27巻 、 441頁、
1992年)によれば、ナノチューブはその直径が2〜
50nm程度と極めて微細である。そのため結晶の特定
の場所にその程度の距離まで近づけることが可能であ
る。STM、AFM等のプローブをナノチューブの近傍
に配置し、それによって結晶の特定の場所を見つけ、ナ
ノチューブとプローブの距離から逆算して、ナノチュー
ブを特定の場所に移動すればよい。移動距離が短いので
図3に示した従来例に比べれば移動時間は短くて済む。
なおナノチューブはグラファイ面を巻いたものである
が、巻く方向によってチューブのバンドギャップが狭い
もの、広いもの、両者の中間のものが存在する。バンド
ギャップの狭いものつまり狭ギャップ半導体を使えばチ
ューブに電流を流すことができ、供給円筒自体をSTM
として使うことができ、STMと供給円筒を共に備えて
おく必要がなくなりしかも原子、分子の供給がさらに効
率的になる。 Iijima et al. (Solid physics, Vol. 27 , p. 441,
1992), nanotubes have a diameter of 2 to
It is extremely fine, about 50 nm. Therefore, it is possible to approach a specific place of the crystal to such a distance . A probe such as an STM or AFM may be arranged in the vicinity of the nanotube, a specific location of the crystal may be found by the probe, and the nanotube may be moved back to the specific location by calculating backward from the distance between the nanotube and the probe. Since the moving distance is short, the moving time is shorter than that in the conventional example shown in FIG.
It should be noted that the nanotubes are wound on the graphy surface, but there are tubes with a narrow band gap, tubes with a wide band gap, and tubes in between, depending on the winding direction. If a narrow band gap semiconductor, that is, a narrow gap semiconductor, is used, current can be passed through the tube, and the supply cylinder itself is an STM.
It is not necessary to have both the STM and the supply cylinder, and the supply of atoms and molecules becomes more efficient.
【0014】また、内径の異なるナノチューブが連続的
につながったものを用いることでより原子の供給効率を
向上させることができる。このようなナノチューブは、
チューブの成長時に六員環構造の一部が五員環または七
員環構造に置き代わったことにより生じる。すなわち、
五員環が入ったときにはチューブの先が閉じようとし、
七員環が入ったときには先端が広がろうとする。ある程
度先が閉じたり、広がったりしたところで、六員環構造
に再び置き換えれば、内径の異なったナノチューブが連
続的につながったものができる。このようなものは実際
に観測されており(飯島ら、固体物理、第27巻、44
1頁、1992年)、目的にあったものを選んで用いれ
ばよい。このようなナノチューブを用いることで、大き
な内径をもつチューブに原子を一時的に蓄えることがで
きるため、さらに高効率の原子供給が可能になる。Further, by using nanotubes having different inner diameters which are continuously connected, the atom supply efficiency can be further improved. Such nanotubes are
It occurs when a part of the six-membered ring structure is replaced by a five-membered ring or a seven-membered ring structure during tube growth. That is,
When the five-member ring entered, the tip of the tube tried to close,
When the seven-membered ring enters, the tip tries to widen. When the tip is closed or expanded to some extent and replaced with a six-membered ring structure again, nanotubes with different inner diameters can be continuously connected. Such a thing has been actually observed (Iijima et al., Solid State Physics, Vol. 27, 44).
1 page, 1992), you can select and use the one that suits your purpose. By using such a nanotube, atoms can be temporarily stored in a tube having a large inner diameter , so that atoms can be supplied with higher efficiency.
【0015】[0015]
【実施例】(実施例1)本発明の一実施例を図1に示
す。二つの供給円筒を近接して設けたものを用意し、一
方のチューブからGa原子3、もう一方のチューブ(図
示せず)からAsを供給して単結晶GaAs基板2上に
GaAsの微細なパターンを形成する例である。ここで
はチューブとして内径が1nm程度のものを用いた。G
aとAsの供給源として、MBEで用いるクヌーセンセ
ル(Kセル)を用いる。Kセルを使うときは基板を下向
き、円筒を上向きにする方がよい(図1では分かりやす
いように上下反対向きに描いてある)。セルの上にアダ
プターを置き、セルから出るGaとAsの蒸気をアダプ
ターへ導き、チューブへ充填する。次いでSTMで基板
2の表面にテラス構造が存在する場所を探す。テラス構
造がある場所は原子の安定なサイトになるからである。
次にチューブ1をそこへ移動させ、ヒーターに電流をパ
ルス状に流し一瞬アダプターを加熱して中の蒸気圧を上
げてGa原子を一個放出する。放出したGa原子はテラ
スに取り込まれる。Asも同様にして一個放出してGa
As分子を一個形成する。このような手順を繰り返して
微細な構造を作製する。EXAMPLE 1 An example of the present invention is shown in FIG. Prepare two cylinders provided close to each other, and supply Ga atoms 3 from one tube and As from the other tube (not shown) to form a fine pattern of GaAs on the single crystal GaAs substrate 2. Is an example of forming. Here, a tube having an inner diameter of about 1 nm was used. G
The Knudsen cell (K cell) used in MBE is used as a supply source of a and As. When using the K cell, it is better to face the substrate downward and the cylinder upward (in FIG. 1, they are drawn upside down for clarity). An adapter is placed on the cell, and vapors of Ga and As exiting from the cell are guided to the adapter and filled in a tube. Next, a place where the terrace structure exists on the surface of the substrate 2 is searched for by STM. This is because the place with the terrace structure becomes a stable site of atoms.
Next, the tube 1 is moved there, and an electric current is passed through the heater in a pulsed manner to heat the adapter for a moment to raise the vapor pressure therein and release one Ga atom. The released Ga atom is taken into the terrace. In the same way, As is also released and Ga
One As molecule is formed. Such a procedure is repeated to produce a fine structure.
【0016】二つのチューブの先端同士の間隔は極めて
近接させることが可能であるので、各チューブの結晶成
長場所への移動は非常に短時間で行うことができる。ま
た従来のようにいちいち原子浴から原子を取り出してこ
なくてよく原子を連続的に放出することが可能であるの
で結晶成長を短時間に行うことができる。Since the intervals between the tips of the two tubes can be made extremely close to each other, the movement of each tube to the crystal growth site can be performed in a very short time. Further, since it is possible to continuously release atoms without having to take them out from the atomic bath as in the conventional case, crystal growth can be performed in a short time.
【0017】微細結晶作製に用いる原子としては、Ga
のようにそれ自体で固体を形づくるものでもよいし、ま
たアルシン(AsH3 )などの分子のように、結晶に付
着してから分解するようなものでも用いることができ
る。また原料はGaとAsに限らず、AlとGaとAs
を使えばAlGaAs、AlとSbを使えばAlSbを
作ることができ、ヘテロの微細構造の作製も容易であ
る。また化合物に限らずシリコン、ゲルマニウムなど単
元素の材料も作製できることは明らかである。Ga is used as an atom for producing a fine crystal.
It is also possible to use a substance that forms a solid by itself, or a substance such as a molecule of arsine (AsH3) that decomposes after being attached to a crystal. The raw materials are not limited to Ga and As, but Al, Ga and As
Can be used to form AlGaAs, and Al and Sb can be used to form AlSb, and it is easy to form a hetero fine structure. Further, it is obvious that not only compounds but also single element materials such as silicon and germanium can be prepared.
【0018】なお図1ではチューブ1が基板2に対して
斜めになっているが、垂直でも同様である。斜めになっ
ていると斜面に微細構造を形成したいときに便利であ
る。Although the tube 1 is inclined with respect to the substrate 2 in FIG. 1, the tube 1 may be vertically arranged. Being slanted is convenient when it is desired to form a fine structure on the slope.
【0019】(実施例2) 本発明の他の実施例を図2に示す。このような内径の異
なるナノチューブ1、10を連続的につなげた場合に
は、細いナノチューブ1を基板2に近づけ、その先端か
ら原子3を放出する。大きな内径をもつナノチューブ1
0の内径を、例えば100オングストローム程度にすれ
ば、一時的に原子を蓄えることができる。従って、外部
からの原子の供給が止まっても、しばらくは太いナノチ
ューブ10に蓄積した原子を用いてかなりの量の結晶成
長が可能となる。(Embodiment 2) Another embodiment of the present invention is shown in FIG. When the nanotubes 1 and 10 having different inner diameters are continuously connected, the thin nanotube 1 is brought close to the substrate 2 and the atom 3 is emitted from the tip thereof. Nanotube with large inner diameter 1
If the inner diameter of 0 is set to, for example, about 100 angstroms, atoms can be temporarily stored. Therefore, even if the supply of atoms from the outside is stopped, a considerable amount of crystals can be grown using the atoms accumulated in the thick nanotube 10 for a while.
【0020】(実施例3)実施例1、2では原子供給チ
ューブの近傍にSTMを設置してこのSTMで移動を行
う場合を示したが、狭バンドギャップ半導体のチューブ
を使えばチューブ自体をSTMとして使えるので装置が
極めて簡単になる。(Embodiment 3) In Embodiments 1 and 2, the STM was installed in the vicinity of the atom supply tube and movement was performed by this STM. However, if a narrow band gap semiconductor tube is used, the tube itself will be STM. Since it can be used as, the device becomes extremely simple.
【0021】[0021]
【発明の効果】本発明の原子・分子供給円筒を用いるこ
とにより、微細結晶構造などを作製する際に、短時間で
原子や分子を1個ずつ操作して結晶成長を行うことがで
きる。By using the atom / molecule supplying cylinder of the present invention, it is possible to carry out crystal growth by manipulating atoms and molecules one by one in a short time when producing a fine crystal structure or the like.
【0022】[0022]
【図1】本発明の実施例1を示す図である。FIG. 1 is a diagram showing a first embodiment of the present invention.
【図2】本発明の実施例2を示す図である。FIG. 2 is a diagram showing a second embodiment of the present invention.
【図3】従来のSTMのプローブを用いた原子操作法を
示す図である。FIG. 3 is a diagram showing an atomic manipulation method using a conventional STM probe.
1、10 カーボンナノチューブ 2 基板 3 原子 4 STMプローブ 1,10 carbon nanotube 2 substrate 3 atom 4 STM probe
Claims (4)
として、原子または分子が一度に一個通れる程度の内径
をもったカーボンナノチューブを用いることを特徴とす
る原子または分子の供給円筒。1. A cylinder for supplying atoms or molecules, wherein carbon nanotubes having an inner diameter such that one atom or molecule can pass through at a time are used as parts for supplying atoms or molecules one by one .
として、原子または分子が一度に一個通れる程度の内径
をもったカーボンナノチューブと、それより大きな内径
をもったカーボンナノチューブとが連続的につながった
ものを用いることを特徴とする原子または分子の供給円
筒。2. A carbon nanotube having an inner diameter that allows one atom or molecule to pass through at a time and a carbon nanotube having a larger inner diameter as a component for supplying atoms or molecules one by one. A cylinder for supplying atoms or molecules, characterized in that they are connected together electrically.
ネル顕微鏡あるいは原子間力顕微鏡のプローブを配置し
ておき、このプローブで成長させたい位置を特定する請
求項1または2に記載の原子または分子の供給円筒。3. A cylinder for supplying atoms or molecules according to claim 1 or 2, wherein a probe of a scanning tunnel microscope or an atomic force microscope is arranged in the vicinity of the carbon nanotube, and a position to be grown by the probe is specified. .
ーブを用いてチューブ自体を走査トンネル顕微鏡のプロ
ーブとして用いる請求項1または2に記載の原子または
分子の供給円筒。4. The atom or molecule supplying cylinder according to claim 1, wherein the tube itself is used as a probe of a scanning tunneling microscope by using a carbon nanotube having a narrow band gap.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6636593A JPH0789475B2 (en) | 1993-03-25 | 1993-03-25 | Atom or molecule supply cylinder |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6636593A JPH0789475B2 (en) | 1993-03-25 | 1993-03-25 | Atom or molecule supply cylinder |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH06283129A JPH06283129A (en) | 1994-10-07 |
| JPH0789475B2 true JPH0789475B2 (en) | 1995-09-27 |
Family
ID=13313756
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6636593A Expired - Lifetime JPH0789475B2 (en) | 1993-03-25 | 1993-03-25 | Atom or molecule supply cylinder |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0789475B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4676073B2 (en) * | 2001-02-13 | 2011-04-27 | エスアイアイ・ナノテクノロジー株式会社 | Mask white defect correction method |
| CA2688576A1 (en) * | 2007-05-31 | 2008-12-04 | The Governors Of Acadia University | Applications for scanning tunnelling microscopy |
| US10112317B2 (en) | 2014-09-22 | 2018-10-30 | The Boeing Company | Nanotube particle device and method for using the same |
-
1993
- 1993-03-25 JP JP6636593A patent/JPH0789475B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06283129A (en) | 1994-10-07 |
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