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JPH0775173B2 - Electrical connection device and manufacturing method thereof - Google Patents

Electrical connection device and manufacturing method thereof

Info

Publication number
JPH0775173B2
JPH0775173B2 JP5688886A JP5688886A JPH0775173B2 JP H0775173 B2 JPH0775173 B2 JP H0775173B2 JP 5688886 A JP5688886 A JP 5688886A JP 5688886 A JP5688886 A JP 5688886A JP H0775173 B2 JPH0775173 B2 JP H0775173B2
Authority
JP
Japan
Prior art keywords
guide hole
metal reservoir
metal
insulating layer
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP5688886A
Other languages
Japanese (ja)
Other versions
JPS62216180A (en
Inventor
薫 橋本
英二 堀越
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5688886A priority Critical patent/JPH0775173B2/en
Publication of JPS62216180A publication Critical patent/JPS62216180A/en
Publication of JPH0775173B2 publication Critical patent/JPH0775173B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

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  • Manufacturing Of Electrical Connectors (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Description

【発明の詳細な説明】 〔概 要〕 低融点合金の溶融・凝固を利用する方式の電気的接続装
置において、低融点合金を入れる該合金溜め部上方に絶
縁層を設けて該合金を該溜め部に良好に配設する。
DETAILED DESCRIPTION OF THE INVENTION [Outline] In an electrical connection device of a system that utilizes melting and solidification of a low melting point alloy, an insulating layer is provided above the alloy reservoir part for containing the low melting point alloy, and the alloy is stored in the reservoir. Satisfactorily arranged in the section.

〔産業上の利用分野〕[Industrial application field]

本発明は電気的接続装置に係り、特に接点ピンを接続す
るために低融点合金を加熱し溶融させて接点ピンの挿
入,抜去を微少力で多数回反復させることができるLSI
モジュール、ICモジュール、あるいは回路基板等の電気
装置間を電気的に相互に接続するための装置、すなわち
コネクタに関する。さらに、本発明はそのような電気的
接続装置の製造に関する。
The present invention relates to an electrical connecting device, and particularly to an LSI capable of heating and melting a low-melting point alloy for connecting contact pins and inserting and removing contact pins many times with a small force.
The present invention relates to a device for electrically connecting electrical devices such as a module, an IC module, or a circuit board, that is, a connector. Furthermore, the invention relates to the manufacture of such an electrical connection device.

〔従来の技術〕[Conventional technology]

従来の電気的接続装置は、通常、雄型接点に相当するピ
ン(接点ピン)と雌型接点に相当するジャックにより構
成されており、これらの嵌合を通じて電気装置相互の接
続を得るようにできている。
Conventional electrical connection devices usually consist of pins that correspond to male contacts (contact pins) and jacks that correspond to female contacts. ing.

最近、集積度の向上に伴い接続装置当りのピン数の増加
に対処して、ピン挿入力及び抜去力の軽減を図ろうとす
る試みもなされており、例えば、零挿入力(ZIF)接続
装置及び軽挿入力(LIF)接続装置として知られてい
る。これらの接続装置には接点ピンをジャックに挿入し
た後に、カム機構により接触力を付与する形式、あるい
はスライドカムにより一括して接続するのではなくて、
分割して接続する機構を採り入れる形式がある。しかし
ながらこれらの接続装置は、複雑な機構と、それに伴う
煩雑な取り扱いとを必要とするものであり、また、製造
コストの上昇をもひきおこす。
Recently, attempts have been made to reduce the pin insertion force and the withdrawal force by coping with the increase in the number of pins per connection device with the increase in the integration degree. For example, a zero insertion force (ZIF) connection device and Known as the light insertion force (LIF) connection device. Instead of connecting the contact pins to the jacks to these connecting devices by a cam mechanism or applying a contact force all at once after inserting the contact pins into the jack,
There is a form that adopts a mechanism that connects by dividing. However, these connecting devices require a complicated mechanism and complicated handling associated therewith, and also cause an increase in manufacturing cost.

上記問題を解決するために、本発明者らは先に、低融点
合金の溶融と凝固を利用して接点ピンの挿入,抜去を行
なう方式の電気的接続装置を開示した〔特開昭58−1699
6号,特願昭58−64737号,特開昭59−146433号、及び特
願昭59−268553号〕。
In order to solve the above-mentioned problems, the present inventors have previously disclosed an electrical connecting device of a system in which a contact pin is inserted and removed by utilizing melting and solidification of a low melting point alloy [JP-A-58-58]. 1699
6, Japanese Patent Application No. 58-64737, Japanese Patent Application Laid-Open No. 59-146433, and Japanese Patent Application No. 59-268553].

第3図は特願昭59−268553号に開示された電気的接続装
置の実装モデル断面図である。
FIG. 3 is a sectional view of a mounting model of the electrical connecting device disclosed in Japanese Patent Application No. 59-268553.

第3図においてプリント回路基板1、接続装置2及びLS
Iモジュール3が下から順に第1接点ピン5及び第2接
点ピン6によってそれぞれ接続されている。
In FIG. 3, the printed circuit board 1, the connection device 2 and the LS
The I modules 3 are connected in order from the bottom by a first contact pin 5 and a second contact pin 6, respectively.

接続装置2はガラスセラミック基板が使用され、これに
接点ピン5と6を通す段つき貫通孔(ハンダ溜め)4が
設けられており、孔の内壁には例えばAu−Pt厚膜ペース
ト、次にAu厚膜ペーストを使用したAu−Pt/Au2層のメタ
ライズ層8が設けられており、接点ピン5のヘッド9は
段上に配設された例えば80%Au−20%Sn低融点金属(ハ
ンダ)7で溶融固着されている。
A glass-ceramic substrate is used for the connection device 2, and a stepped through hole (solder reservoir) 4 through which the contact pins 5 and 6 are inserted is provided in the connection device 2. The inner wall of the hole is made of, for example, Au-Pt thick film paste, and then A metallization layer 8 of Au-Pt / Au2 layer using Au thick film paste is provided, and the head 9 of the contact pin 5 is, for example, 80% Au-20% Sn low melting point metal (solder). ) 7, it is melted and fixed.

〔発明が解決しようとする問題点〕[Problems to be solved by the invention]

上記従来の接続装置ではメタライズ層8が貫通孔4の内
壁上部にまで形成されているのでこの孔4の段上に低融
点金属7を配設する際、低融点金属が貫通孔上部のメタ
ライズ層と接続せしめられ、いわゆる“棚吊り”状態と
なり段付き部まで流れ落ちない場合があり、このような
場合接点ピン間の接続不良、接点ピンの斜め接続等の問
題がある。
Since the metallization layer 8 is formed up to the upper part of the inner wall of the through hole 4 in the above-mentioned conventional connecting device, when the low melting point metal 7 is arranged on the step of the hole 4, the low melting point metal is located on the upper part of the through hole. There is a case where it does not flow down to the stepped portion due to a so-called “shelf-hanging” state, and in such a case, there are problems such as poor connection between contact pins and diagonal connection of contact pins.

第4A図と第4B図はそれぞれ低融点合金の貫通孔内での正
常な配設状態及び棚吊り状態を模式的に示した断面図で
ある。
FIG. 4A and FIG. 4B are cross-sectional views schematically showing a normal arrangement state and a hanging state in the through hole of the low melting point alloy, respectively.

〔問題点を解決するための手段〕[Means for solving problems]

上記問題点は本発明によれば電気装置間に介在せしめて
それらを電気的に接続するための装置であって、下記の
手段: 絶縁材料からなる接続ホード、接続ボードを貫通して穿
たれた、電気装置の接点ピンを挿入可能なガイド孔、該
ガイド孔の一部に形成された金属溜め、該金属溜めに収
容された、接点間接続に供される低融点金属、そして前
記金属溜めの近傍に配置された、メラタイズ層、を組み
合わせて含んでなる電気的接続装置において;前記金属
溜め領域上方の前記ガイド孔内壁面に絶縁層を配設した
ことを特徴とする電気的接続装置によって解決される。
According to the present invention, the above-mentioned problem is a device for electrically connecting them by interposing them between the electric devices, and the following means are provided: a connecting hod made of an insulating material; A guide hole into which a contact pin of an electric device can be inserted, a metal reservoir formed in a part of the guide hole, a low melting point metal accommodated in the metal reservoir for connection between contacts, and the metal reservoir An electrical connection device comprising a combination of a melatize layer, which is arranged in the vicinity, wherein an insulating layer is provided on the inner wall surface of the guide hole above the metal reservoir region. To be done.

さらに、本発明によれば、上記したような電気的接続装
置の製造方法が提供される。この製造方法は、前記ガイ
ド孔内壁面にメタライズ層を形成した後、該金属溜め近
傍にワックスを配設し、該ワックス上方のガイド孔内壁
面に前記絶縁層をスクリーン印刷し、その後該ワックス
を溶解せしめることことを特徴とする。
Further, according to the present invention, there is provided a method of manufacturing the above electrical connection device. In this manufacturing method, after forming a metallized layer on the inner wall surface of the guide hole, a wax is arranged in the vicinity of the metal reservoir, the insulating layer is screen-printed on the inner wall surface of the guide hole above the wax, and then the wax is formed. It is characterized by being dissolved.

〔作 用〕[Work]

本発明によれば貫通孔上部内壁面上に絶縁層が設けられ
ているので孔上部における低融点金属の接続が起らな
い。
According to the present invention, since the insulating layer is provided on the inner wall surface of the upper portion of the through hole, the connection of the low melting point metal does not occur at the upper portion of the hole.

〔実施例〕〔Example〕

以下本発明の実施例を図面に基づいて説明する。 Embodiments of the present invention will be described below with reference to the drawings.

第1図は本発明の一実施例を説明するための要部概略断
面図である。
FIG. 1 is a schematic sectional view of an essential part for explaining an embodiment of the present invention.

第1図に示すように厚さ約3mmのガラスセラミック基板1
1に接点ピン(図示せず)を挿入するための直径約1.0mm
の貫通孔12が段付き部13(直径0.6mm)を有して設けら
れ、貫通孔12の内壁面に例えばPt−Au/Au2層からなる発
熱体であるメタライズ層15が設けられ、貫通孔上部のメ
タライズ層15上に例えば誘電体ペーストを用いた絶縁層
16が約10〜20μmの厚さに形成されている。図で示した
破線は絶縁層16を形成した後に挿入された例えばIn−48
%Snからなる低融点合金14である。絶縁層16の流さは約
1mm程度が好ましい。
As shown in Fig. 1, a glass-ceramic substrate with a thickness of about 3 mm 1
Diameter of about 1.0mm for inserting contact pin (not shown) into 1
Of the through hole 12 having a stepped portion 13 (diameter 0.6 mm), the inner wall surface of the through hole 12 is provided with a metallized layer 15 which is a heating element made of, for example, a Pt-Au / Au2 layer. An insulating layer using, for example, a dielectric paste on the upper metallized layer 15
16 is formed to a thickness of about 10 to 20 μm. The broken line shown in the figure is, for example, In-48 inserted after forming the insulating layer 16.
It is a low melting point alloy 14 composed of% Sn. The flow rate of the insulating layer 16 is about
About 1 mm is preferable.

第2A図ないし第2B図は本発明に係る絶縁層を形成する方
法を説明するための工程断面図である。
2A to 2B are process cross-sectional views for explaining a method of forming an insulating layer according to the present invention.

メタライズ層15の形成までは従来法と同様である。The process up to the formation of the metallized layer 15 is similar to the conventional method.

第2A図に示すようにメタライズ層15を形成したガラスセ
ラミック基板11の貫通孔12の中にワックス17の粉、ある
いは球を、適量つめた後、同じワックス17を満たした容
器18中に置き、ワックス17を溶解させる。このようにし
て第2B図に示すように溶解したワックス17は貫通孔の下
部を埋める。この状態もしくは容器18中の適当な位置で
切りとった基板11(+ワックス)を第2C図に示すように
スクリーン印刷機に設置し、そして、例えばテルピネオ
カレ等の有機溶剤でうすめたガラスを主成分とする絶縁
ペースト16をスクリーン印刷する(19はスクリーンマス
クである。)。これによって、メタライズ層15の表面に
さらに絶縁ペーストの層16形成される。この状態の基板
11を第2D図に示すように逆さにして焼成すると、昇温時
に、まずワックスが溶解,消失し、次に絶縁層16がメタ
ライズ層15の表面に焼付けられる。この時、ワックス17
で被覆されていた部分には、絶縁層は形成されない。こ
のようにして、貫通孔17の上部のみが絶縁された金属溜
めが形成できる(第2E図)。この金属溜めに、低融点金
属を従来法によって充填したところ、すべて底へ流れ落
ち、接点ピンを介した安定した電気的接続が得られた。
As shown in FIG. 2A, powder of wax 17 in the through hole 12 of the glass-ceramic substrate 11 on which the metallized layer 15 is formed, or spheres, after being packed in an appropriate amount, placed in a container 18 filled with the same wax 17, Melt wax 17. In this way, the melted wax 17 fills the lower part of the through hole as shown in FIG. 2B. The substrate 11 (+ wax) cut in this state or at an appropriate position in the container 18 is set in a screen printing machine as shown in FIG. 2C, and the main component is glass thinned with an organic solvent such as terpineocare. The insulating paste 16 is screen-printed (19 is a screen mask). As a result, an insulating paste layer 16 is further formed on the surface of the metallized layer 15. Substrate in this state
When 11 is fired upside down as shown in FIG. 2D, when the temperature rises, the wax first melts and disappears, and then the insulating layer 16 is baked on the surface of the metallized layer 15. At this time, wax 17
The insulating layer is not formed on the portion covered with. In this way, a metal reservoir in which only the upper part of the through hole 17 is insulated can be formed (Fig. 2E). When this metal reservoir was filled with a low melting point metal by the conventional method, it all fell down to the bottom, and stable electrical connection was obtained through the contact pins.

〔発明の効果〕〔The invention's effect〕

以上説明したように本発明によれば低融点金属(ハン
ダ)が貫通孔の段付部(金属溜めの底)まで流れ落ちる
ので接点ピンが安定した接続作用を行なうことができ
る。
As described above, according to the present invention, the low melting point metal (solder) flows down to the stepped portion (the bottom of the metal reservoir) of the through hole, so that the contact pin can perform a stable connecting action.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例を説明するための要部概略断
面図であり、第2A図ないし第2E図は本発明に係る絶縁層
を形成する方法を説明するための工程断面図であり、第
3図は特願昭59−268553号に開示された電気的接続装置
の実装モデル断面図であり、第4A図と第4B図はそれぞれ
低融点金属の貫通孔内での正常な配設状態及び棚吊り状
態を模式的に示した断面図である。 11……ガラスセラミック基板、12……貫通孔、 13……段付き部、14……低融点金属、 15……メタライズ層、16……接続層。
FIG. 1 is a schematic cross-sectional view of an essential part for explaining an embodiment of the present invention, and FIGS. 2A to 2E are process cross-sectional views for explaining a method for forming an insulating layer according to the present invention. FIG. 3 is a cross-sectional view of a mounting model of the electrical connecting device disclosed in Japanese Patent Application No. 59-268553, and FIGS. 4A and 4B are normal layouts in through holes of low melting point metal. It is sectional drawing which showed the installation state and the shelf hanging state typically. 11 …… Glass-ceramic substrate, 12 …… Through hole, 13 …… Stepped portion, 14 …… Low melting point metal, 15 …… Metalized layer, 16 …… Connecting layer.

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】電気装置間に介在せしめてそれらを電気的
に接続するための装置であって、下記の手段: 絶縁材料からなる接続ホード、 該接続ボードを貫通して穿たれた、電気装置の接点ピン
を挿入可能なガイド孔、 該ガイド孔の一部に形成された金属溜め、 該金属溜めに収容された、接点間接続に供される低融点
金属、そして 前記金属溜めの近傍に配置された、メラタイズ層、 を組み合わせて含んでなる電気的接続装置において; 前記金属溜め領域上方の前記ガイド孔内壁面に絶縁層を
配設したことを特徴とする電気的接続装置。
1. A device for interposing electrical connection between electrical devices, the device comprising the following means: a connecting hod made of an insulating material, an electrical device drilled through the connecting board. Guide hole into which the contact pin can be inserted, a metal reservoir formed in a part of the guide hole, a low-melting metal housed in the metal reservoir for connection between contacts, and arranged in the vicinity of the metal reservoir An electrical connection device comprising a combination of a melted layer and an insulating layer formed on the inner wall surface of the guide hole above the metal reservoir region.
【請求項2】絶縁材料からなる接続ボードと、該接続ボ
ードを貫通して穿たれた、電気装置の接点ピンを挿入可
能なガイド孔と、該ガイド孔の一部に形成された金属溜
めと、該金属溜めに収容された、接点間接続に供される
低融点金属と、前記金属溜めの近傍に配置された、メタ
ライズ層と、前記金属溜め領域上方の前記ガイド孔内壁
面に配設された絶縁層とを組み合わせて含んでなる電気
的接続装置の製造方法であって; 前記ガイド孔内壁面にメタライズ層を形成した後、該金
属溜め近傍にワックスを配設し、該ワックス上方のガイ
ド孔内壁面に前記絶縁層をスクリーン印刷し、その後該
ワックスを溶解せしめ、それから低融点金属を充填する
ことを特徴とする電気的接続装置の製造方法。
2. A connection board made of an insulating material, a guide hole penetrating the connection board, into which a contact pin of an electric device can be inserted, and a metal reservoir formed in a part of the guide hole. A low-melting-point metal accommodated in the metal reservoir, which is used for connection between contacts, a metallization layer disposed in the vicinity of the metal reservoir, and an inner wall surface of the guide hole above the metal reservoir region. A method for manufacturing an electrical connecting device including a combination of an insulating layer and an insulating layer; forming a metallized layer on the inner wall surface of the guide hole, and disposing a wax near the metal reservoir; A method for manufacturing an electrical connection device, comprising screen-printing the insulating layer on the inner wall surface of a hole, then melting the wax, and then filling the low melting point metal.
JP5688886A 1986-03-17 1986-03-17 Electrical connection device and manufacturing method thereof Expired - Fee Related JPH0775173B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5688886A JPH0775173B2 (en) 1986-03-17 1986-03-17 Electrical connection device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5688886A JPH0775173B2 (en) 1986-03-17 1986-03-17 Electrical connection device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
JPS62216180A JPS62216180A (en) 1987-09-22
JPH0775173B2 true JPH0775173B2 (en) 1995-08-09

Family

ID=13039965

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5688886A Expired - Fee Related JPH0775173B2 (en) 1986-03-17 1986-03-17 Electrical connection device and manufacturing method thereof

Country Status (1)

Country Link
JP (1) JPH0775173B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8854192B1 (en) 2000-03-15 2014-10-07 Logitech Europe S.A. Configuration method for a remote
US9207652B2 (en) 2005-04-20 2015-12-08 Logitech Europe S.A. System and method for adaptive programming of a remote control

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8854192B1 (en) 2000-03-15 2014-10-07 Logitech Europe S.A. Configuration method for a remote
US9207652B2 (en) 2005-04-20 2015-12-08 Logitech Europe S.A. System and method for adaptive programming of a remote control

Also Published As

Publication number Publication date
JPS62216180A (en) 1987-09-22

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