JPH076933A - Manufacture of solid electrolytic capacitor - Google Patents
Manufacture of solid electrolytic capacitorInfo
- Publication number
- JPH076933A JPH076933A JP16013692A JP16013692A JPH076933A JP H076933 A JPH076933 A JP H076933A JP 16013692 A JP16013692 A JP 16013692A JP 16013692 A JP16013692 A JP 16013692A JP H076933 A JPH076933 A JP H076933A
- Authority
- JP
- Japan
- Prior art keywords
- electrolytic capacitor
- solid electrolytic
- small holes
- solid electrolyte
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 title claims abstract description 28
- 239000007787 solid Substances 0.000 title claims abstract description 20
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000126 substance Substances 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 150000002500 ions Chemical class 0.000 claims description 34
- 238000007740 vapor deposition Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052754 neon Inorganic materials 0.000 claims description 3
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 3
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 claims 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical group O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical group [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 31
- 239000007784 solid electrolyte Substances 0.000 abstract description 23
- 229910052782 aluminium Inorganic materials 0.000 abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 20
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 abstract description 12
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 238000005530 etching Methods 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 4
- 238000010884 ion-beam technique Methods 0.000 abstract description 3
- 239000004411 aluminium Substances 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 8
- 239000008151 electrolyte solution Substances 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000011148 porous material Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- -1 Nitrogen ions Chemical class 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 238000004093 laser heating Methods 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000012266 salt solution Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、有機物質からなる固体
電解質の新規な形成手段を有する固体電解コンデンサの
製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a solid electrolytic capacitor having a novel means for forming a solid electrolyte made of an organic substance.
【０００２】[0002]
【従来の技術】アルミニウム電解コンデンサは、単位面
積当たりの容量とコスト面で非常に優れていることか
ら、エレクトロニクス機器・装置やパワーエレクトロニ
クス分野を始め、数多くの分野で広範囲に使用されてい
る。2. Description of the Related Art Aluminum electrolytic capacitors are widely used in many fields including the field of electronic equipment / devices and power electronics, because they are very excellent in capacity per unit area and cost.
【０００３】一般にアルミニウム電解コンデンサは、単
位面積当たりの容量を大きくするためエッチングによっ
てアルミニウム電極箔を粗面化して数μｍ径の小孔を多
数設けアルミニウム電極箔の表面積を拡大し、しかる後
化成工程を経て前記小孔中を含めた表面に誘電体酸化皮
膜を形成し、コンデンサ素子形成後駆動用電解液を含浸
しているが、駆動用電解液は溶液であるため、前記小孔
中に駆動用電解液が満遍無く入り込み、容量拡大を図る
ことが可能となっている。Generally, in an aluminum electrolytic capacitor, in order to increase the capacity per unit area, the aluminum electrode foil is roughened by etching to provide a large number of small holes with a diameter of several μm to increase the surface area of the aluminum electrode foil, and a subsequent chemical conversion process is performed. After forming the capacitor element, a dielectric oxide film is formed on the surface including the inside of the small holes, and the driving electrolytic solution is impregnated after the formation of the capacitor element, but since the driving electrolytic solution is a solution, it is driven into the small holes. It is possible to expand the capacity by evenly flowing the electrolyte solution for use.
【０００４】しかしながら、このような駆動用電解液を
含浸した電解コンデンサは、駆動用電解液として有機酸
塩溶液等を利用している関係上、駆動用電解液での電気
伝導がイオン性となり、導電率が１０-2Ｓ／ｃｍ以下と
著しく小さく、周波数特性や温度特性とも劣る欠点を持
っていた。However, in such an electrolytic capacitor impregnated with the driving electrolytic solution, since the organic acid salt solution or the like is used as the driving electrolytic solution, the electric conduction in the driving electrolytic solution becomes ionic, The conductivity was remarkably small at 10 -2 S / cm or less, and it had a defect that frequency characteristics and temperature characteristics were poor.
【０００５】そのため、近年高い導電率を持ち、かつ電
子性伝導である例えばＴＣＮＱ錯体からなる有機半導体
を固体電解質として用いた固体電解コンデンサが考えら
れている。Therefore, in recent years, a solid electrolytic capacitor has been considered in which an organic semiconductor having a high conductivity and electronic conductivity, for example, a TCNQ complex is used as a solid electrolyte.
【０００６】しかして、有機半導体としてのＴＣＮＱ錯
体を固体電解質として形成する手段として、現在まで検
討された方法は、（１）溶液法、（２）溶融法、（３）
加熱蒸着法であるが、（１）の方法では小孔中に有機半
導体としてのＴＣＮＱ錯体を充分に取り込めないという
致命的な欠点を有し、また（２）の方法はある程度小孔
中に有機半導体を取り込むことができ一部実用化されて
いるが含浸条件確立に難点があり完全なものとはなって
おらず、更に（３）の方法はドライ工程で、かつ操作が
容易となり、また有機半導体としてＴＣＮＱ錯体に限定
することなく多様な有機物質に適用できる利点を持って
いるが、単なる加熱蒸着手段では小孔中に有機半導体を
十分に蒸着させることができず所望の静電容量を得るこ
とが困難であった。However, as the means for forming the TCNQ complex as an organic semiconductor as a solid electrolyte, the methods studied up to now are (1) solution method, (2) melting method, (3).
Although it is a heating vapor deposition method, the method (1) has a fatal drawback that the TCNQ complex as an organic semiconductor cannot be sufficiently incorporated into the small pores, and the method (2) has a certain degree of small organic content in the small pores. Although it can incorporate semiconductors and has been partially put into practical use, it is not perfect due to difficulties in establishing impregnation conditions. Furthermore, method (3) is a dry process and is easy to operate. Although it has an advantage that it can be applied to various organic substances without being limited to the TCNQ complex as a semiconductor, the organic semiconductor cannot be sufficiently vapor-deposited in the small holes by a simple heating vapor deposition means to obtain a desired capacitance. Was difficult.
【０００７】[0007]
【発明が解決しようとする課題】以上のように高い導電
率を持ち、かつ電子性伝導である有機半導体としてのＴ
ＣＮＱ錯体を固体電解質として用いた固体電解コンデン
サの固体電解質形成手段として、（１）溶液法、（２）
溶融法、（３）加熱蒸着法等が検討されているが、いず
れの方法においても所望の固体電解質を得る上で問題が
あり、実用上解決すべき課題を抱える結果となってい
た。As described above, T as an organic semiconductor having high conductivity and electronic conductivity is used.
As a solid electrolyte forming means of a solid electrolytic capacitor using a CNQ complex as a solid electrolyte, (1) solution method, (2)
Although the melting method, (3) heating vapor deposition method and the like have been studied, any of these methods has a problem in obtaining a desired solid electrolyte, resulting in problems to be solved in practice.
【０００８】本発明は、ＴＣＮＱ錯体等の有機物質を固
体電解質として用いた固体電解コンデンサの固体電解質
形成手段が抱える従来技術の課題を解決するために提案
されたものであり、その目的は、蒸着法を工夫すること
により、小孔中にも有機半導体としてのＴＣＮＱ錯体等
の有機物質を導入しながら、弁作用金属の酸化皮膜上に
均一で高密度の固体電解質を形成する方法を確立し、静
電容量が大きく、周波数特性及び温度特性の良好な固体
電解コンデンサを得ることが可能な固体電解コンデンサ
の製造方法を提供することである。The present invention has been proposed in order to solve the problems of the prior art which the solid electrolyte forming means of a solid electrolytic capacitor using an organic substance such as a TCNQ complex as a solid electrolyte has. By devising the method, we have established a method to form a uniform and high-density solid electrolyte on the oxide film of valve metal while introducing organic substances such as TCNQ complex as an organic semiconductor into the small pores. It is an object of the present invention to provide a method for manufacturing a solid electrolytic capacitor which has a large electrostatic capacity and is capable of obtaining a solid electrolytic capacitor having good frequency characteristics and temperature characteristics.
【０００９】[0009]
【課題を解決するための手段】本発明による固体電解コ
ンデンサの製造方法は、微細な小孔を持つ弁作用金属表
面に形成した酸化皮膜上に、イオンを照射しながら有機
物質を蒸着し陰極導電層としての固体電解質を形成する
ことを特徴としている。According to the method of manufacturing a solid electrolytic capacitor of the present invention, an organic substance is vapor-deposited while irradiating ions on an oxide film formed on the surface of a valve metal having fine pores to form a cathode conductive film. It is characterized by forming a solid electrolyte as a layer.
【００１０】また、イオン源と弁作用金属を対向配置
し、弁作用金属直下に蒸着物質を置き、イオンの照射方
向と蒸着物が同一方向になるようにすることが望まし
い。Further, it is desirable that the ion source and the valve action metal are arranged so as to face each other, and the vapor deposition substance is placed directly under the valve action metal so that the ion irradiation direction and the vapor deposition substance are in the same direction.
【００１１】更に、イオンは窒素（Ｎ2 ）ガスあるいは
ネオン（Ｎｅ）・ヘリウム（Ｈｅ）ガスを導入して作製
することが望ましい。Further, it is desirable that the ions are produced by introducing nitrogen (N 2 ) gas or neon (Ne) .helium (He) gas.
【００１２】[0012]
【作用】以上のような構成を有する本発明の製造方法に
よれば、有機物質の蒸着がイオン照射によって行うもの
であるため、蒸着物が小孔中にコントロールされてスム
ースに導入されることになり小孔中に有機物質としての
固体電解質が均一に高密度に形成され、静電容量を大き
くすることが可能であり、かつ周波数特性及び温度特性
も大幅に改善できる。According to the manufacturing method of the present invention having the above-described structure, since the vapor deposition of the organic substance is performed by ion irradiation, the vapor deposit can be smoothly introduced by being controlled in the small holes. The solid electrolyte as an organic substance is uniformly and densely formed in the small pores, the capacitance can be increased, and the frequency characteristic and the temperature characteristic can be greatly improved.
【００１３】また、本発明の製造方法はドライ工程であ
り、蒸着装置とイオン源のみで行うことができ複雑な機
器等を必要とせず、自動化工程が容易となり固体電解コ
ンデンサを高い信頼性と安定した状態で得ることができ
る。Further, the manufacturing method of the present invention is a dry process, can be carried out only by the vapor deposition apparatus and the ion source, does not require complicated equipment, and facilitates the automation process, thus making the solid electrolytic capacitor highly reliable and stable. Can be obtained in the
【００１４】[0014]
【実施例】以下、本発明による固体電解コンデンサの製
造方法の一実施例について図面を参照して説明する。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a method for manufacturing a solid electrolytic capacitor according to the present invention will be described below with reference to the drawings.
【００１５】すなわち、図１は本発明に用いる装置の一
例であり、真空容器１内にエッチング工程を経て微細な
小孔を形成した後、化成工程を経て前記小孔を含む表面
に酸化皮膜を形成したアルミニウム板２を取付基板３に
取付け、この取付基板３中央の直下数ｃｍに有機物質と
してのＴＣＮＱ錯体からなる蒸着物質４を置き、前記取
付基板３と蒸着物質４の同一線上に取付基板３から数十
ｃｍ離し、前記取付基板３中央とイオン源６の中心が一
致するようにイオン源６を配置させる。この場合前記取
付基板３は対象物により加熱、冷却、振動、回転あるい
は移動させることができる。蒸着物質４の蒸発は発熱源
ヒータ５で行うことが多いが、レーザ加熱やビーム加熱
等多様な加熱方式を用いることが可能である。また、イ
オン源６はカウフウマン形デュアルグリッドイオン源を
使用しているが、イオンの発生方法については冷陰極イ
オン発生法やその他、公知技術の如何なる方法でも実施
することができる。図中７はイオン生成のためのガス導
入バルブで、８は排気装置である。That is, FIG. 1 is an example of an apparatus used in the present invention, in which a fine small hole is formed in a vacuum container 1 through an etching process and then an oxide film is formed on a surface including the small hole through a chemical conversion process. The formed aluminum plate 2 is attached to a mounting substrate 3, a vapor deposition substance 4 made of a TCNQ complex as an organic substance is placed several cm directly below the center of the mounting substrate 3, and the attachment substrate 3 and the vapor deposition substance 4 are on the same line. The ion source 6 is arranged so that the center of the mounting substrate 3 and the center of the ion source 6 coincide with each other at a distance of several tens of cm from 3. In this case, the mounting substrate 3 can be heated, cooled, vibrated, rotated or moved depending on the object. Evaporation of the vapor deposition material 4 is often performed by the heat source heater 5, but various heating methods such as laser heating and beam heating can be used. Further, although the Kaufmann type dual grid ion source is used as the ion source 6, the cold cathode ion generating method or any other known method can be used as the ion generating method. In the figure, 7 is a gas introduction valve for ion generation, and 8 is an exhaust device.
【００１６】しかして、本発明は上記装置を用い、アル
ミニウム板２に蒸着物質４の蒸発方向と同一方向にイオ
ン源６から窒素（Ｎ2 ）ガスあるいはネオン（Ｎｅ）・
ヘリウム（Ｈｅ）ガスを利用して作製したイオンを照射
し、前記アルミニウム板２表面に固体電解質を形成し、
この固体電解質上に銀ペースト層を形成し、最後に樹脂
外装を施してなるものである。Therefore, the present invention uses the above-mentioned apparatus and applies nitrogen (N 2 ) gas or neon (Ne) gas from the ion source 6 to the aluminum plate 2 in the same direction as the evaporation direction of the vapor deposition material 4.
Irradiation of ions produced using helium (He) gas to form a solid electrolyte on the surface of the aluminum plate 2,
A silver paste layer is formed on this solid electrolyte, and finally a resin coating is applied.
【００１７】以上のような構成からなる固体電解コンデ
ンサの製造方法によれば、蒸着物質４の蒸着がイオン照
射であるため、蒸着物質４が弁作用金属に形成した小孔
内にコントロールされてスムースに導入されることにな
り小孔中を含めたアルミニウム板２表面に有機物質とし
てのＴＣＮＱ錯体からなる固体電解質が均一に形成され
る結果、従来のイオン照射しない単なる加熱蒸着によっ
て固体電解質を形成する場合と比較して静電容量が数倍
大きくなり、しかも周波数特性及び温度特性も大幅に向
上する優れた効果を得ることができる。According to the method for manufacturing a solid electrolytic capacitor having the above-described structure, since the vapor deposition of the vapor deposition material 4 is ion irradiation, the vapor deposition material 4 is controlled in the small holes formed in the valve metal to be smooth. As a result, the solid electrolyte composed of the TCNQ complex as an organic substance is uniformly formed on the surface of the aluminum plate 2 including the small holes, and as a result, the solid electrolyte is formed by conventional simple thermal vapor deposition without ion irradiation. It is possible to obtain an excellent effect that the capacitance is increased several times as compared with the case and the frequency characteristic and the temperature characteristic are significantly improved.
【００１８】また、本発明による固体電解質形成手段
は、溶液法あるいは溶融法と比較して簡易な装置でよく
自動化工程が容易で作業性向上にも大きく貢献できる。Further, the solid electrolyte forming means according to the present invention requires a simple apparatus as compared with the solution method or the melting method, the automation process is easy, and the workability can be greatly improved.
【００１９】次に本発明と従来例それぞれによって得ら
れたアルミニウム固体電解コンデンサの特性比較につい
て述べる。Next, a comparison of the characteristics of the aluminum solid electrolytic capacitors obtained by the present invention and the conventional example will be described.
【００２０】すなわち、図１の装置を用い、エッチング
工程を経て例えば平均１．４μｍのピット径を形成し、
次に化成電圧５０Ｖの条件下で化成を施し前記ピット径
を含む表面に酸化皮膜を形成したアルミニウム板２を、
イオン源６の照射面と平行になるように取付基板３に取
り付け、真空容器１内をあらかじめ１０-5〜１０-6Ｔｏ
ｒｒ程度に排気し、その後バルブ７から１×１０-4Ｔｏ
ｒｒになるまで窒素ガス（Ｎ2 ）を導入する。イオン源
７からの窒素イオンの発生は、イオンビームエネルギー
が１００ｅＶでイオン電流密度が１０〜１００ｎＡ／ｃ
ｍ2 となるように各パラメータを設定して行った。That is, using the apparatus of FIG. 1, an average pit diameter of 1.4 μm is formed through an etching process,
Next, the aluminum plate 2 which has been subjected to chemical conversion under the condition of a chemical conversion voltage of 50 V and which has an oxide film formed on the surface including the pit diameter,
It is attached to the attachment substrate 3 so as to be parallel to the irradiation surface of the ion source 6, and the inside of the vacuum container 1 is previously set to 10 −5 to 10 −6 To.
Evacuate to about rr, then from valve 7 to 1 × 10 −4 To
Nitrogen gas (N 2 ) is introduced until rr is reached. Nitrogen ions are generated from the ion source 7 with an ion beam energy of 100 eV and an ion current density of 10 to 100 nA / c.
Each parameter was set so as to be m 2 .
【００２１】しかして、このようにして発生させた窒素
イオンを利用して前記アルミニウム板２に照射しながら
蒸着物質４としてのＴＣＮＱ錯体０．０７ｇを蒸着し、
酸化皮膜が形成されたピット径を含むアルミニウム板２
全表面に固体電解質を形成した後、装置から取り外し固
体電解質上に銀ペースト層を形成して、最後にエポキシ
樹脂でモールドし８０℃−１時間乾燥し樹脂外装を施し
てなる本発明によるアルミニウム固体電解コンデンサ
と、イオンを照射せずに加熱蒸着し、その他は本発明と
同一手段で形成した従来例によるアルミニウム固体電解
コンデンサとの静電容量を比較した結果、本発明のもの
は最大値１．２μＦ／ｃｍ2 であったのに対し、従来例
のものは約０．１μＦ／ｃｍ2 であり、イオン照射を行
うことにより、静電容量値が約１２倍向上することがわ
かる。Then, while irradiating the aluminum plate 2 with the nitrogen ions thus generated, 0.07 g of the TCNQ complex as the deposition material 4 is deposited,
Aluminum plate 2 including pit diameter with oxide film formed
After forming the solid electrolyte on the entire surface, it is removed from the apparatus, a silver paste layer is formed on the solid electrolyte, and finally, it is molded with an epoxy resin, dried at 80 ° C. for 1 hour, and a resin coating is applied. As a result of comparing the electrostatic capacities of the electrolytic capacitor and the aluminum solid electrolytic capacitor according to the conventional example which was formed by the same means as the present invention by heating vapor deposition without irradiating ions, the maximum value of the present invention was 1. whereas there was a 2 .mu.F / cm 2, the conventional example of what is about 0.1ĩF / cm 2, by ion irradiation, it is understood that the capacitance value is increased about 12-fold.
【００２２】このことは、図２、図３、図４に示す静電
容量のイオン源からアルミニウム板までの距離依存性、
静電容量のイオン電流密度依存性及び静電容量のイオン
引き出し電極電圧依存性の結果より明らかなように、イ
オン照射により、イオンビームの持つエネルギーが蒸着
物質の蒸発に有効に作用し、アルミニウム板のピット内
にも蒸着物質としてのＴＣＮＱ錯体が導入されると同時
に、イオン照射効果によりアルミニウム板全表面に均一
で高密度なＴＣＮＱ錯体からなる固体電解質としての蒸
着膜が形成されることになり静電容量増大につながって
いるものとしてとらえることができる。This means that the capacitance dependence shown in FIGS. 2, 3 and 4 depends on the distance from the ion source to the aluminum plate.
As is clear from the results of the dependence of the capacitance on the ion current density and the dependence of the capacitance on the voltage of the ion-extracting electrode, the energy of the ion beam effectively acts on the evaporation of the deposition material by the ion irradiation, and the aluminum plate At the same time that the TCNQ complex as a vapor deposition substance is introduced into the pits of the electrode, a vapor deposition film as a solid electrolyte composed of a uniform and high density TCNQ complex is formed on the entire surface of the aluminum plate due to the ion irradiation effect. It can be regarded as an increase in electric capacity.
【００２３】なお、上記実施例では弁作用金属としてア
ルミニウム板を用いるものを例示して説明したが、タン
タル板を用いたものに適用しても同様の効果を得ること
ができることは勿論であり、また、本発明の固体電解質
形成として上記実施例にて例示した装置及び詳細条件に
限定されるものでなく、本発明の要旨を逸脱しない範囲
内で適宜設定できるこは言うまでもない。In the above-mentioned embodiment, the case where the aluminum plate is used as the valve action metal has been described as an example. However, it is needless to say that the same effect can be obtained by applying to the one using the tantalum plate. Further, it is needless to say that the solid electrolyte formation of the present invention is not limited to the apparatus and detailed conditions exemplified in the above examples, and can be appropriately set within a range not departing from the gist of the present invention.
【００２４】[0024]
【発明の効果】以上述べたように、本発明によれば簡易
な手段によって、小孔内を含む弁作用金属体全表面に固
体電解質としての蒸着膜を均一に形成できることによ
り、静電容量が大きく、かつ周波数特性及び温度特性が
大幅に改善されるため、今後電気・電子産業界を始め、
数多くの分野にわたって広く活用され、本発明が産業界
に及ぼす影響は大きなものがある。As described above, according to the present invention, it is possible to uniformly form a vapor-deposited film as a solid electrolyte on the entire surface of the valve action metal body including the inside of the small hole by a simple means. Since it is large and frequency characteristics and temperature characteristics are greatly improved, it will start in the electric and electronic industry in the future,
It is widely used in many fields, and the present invention has a great influence on the industry.
【図１】本発明を実施するための蒸着装置図。FIG. 1 is a diagram of a vapor deposition apparatus for carrying out the present invention.
【図２】イオン源とアルミニウム板の距離−静電容量特
性曲線図。FIG. 2 is a distance-capacitance characteristic curve diagram of an ion source and an aluminum plate.
【図３】イオン電流密度−静電容量特性曲線図。FIG. 3 is an ion current density-capacitance characteristic curve diagram.
【図４】イオン引出電極電圧−静電容量特性曲線図。FIG. 4 is an ion extraction electrode voltage-capacitance characteristic curve diagram.
１ 真空容器 ２ アルミニウム板 ３ 取付基板 ４ 蒸着物質 ５ 発熱源ヒータ ６ イオン源 ７ ガス導入バルブ ８ 排気装置 1 Vacuum Container 2 Aluminum Plate 3 Mounting Substrate 4 Vapor Deposition Material 5 Heat Source Heater 6 Ion Source 7 Gas Introduction Valve 8 Exhaust Device
───────────────────────────────────────────────────── フロントページの続き (72)発明者 吉野 勝美 大阪府岸和田市尾生町166−３ ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsumi Yoshino 166-3 Oomachi, Kishiwada City, Osaka Prefecture
Claims (6)
蒸着した有機物を陰極導電層として使用することを特徴
とする固体電解コンデンサの製造方法。1. A method for producing a solid electrolytic capacitor, wherein an organic substance deposited on a porous insulating film while irradiating with ions is used as a cathode conductive layer.
し、基板直下に蒸着物質を置き、イオンの照射方向と蒸
着物が同一方向となることを特徴とする請求項１記載の
固体電解コンデンサの製造方法。2. The solid electrolytic capacitor according to claim 1, wherein the ion source and the porous insulating film substrate are arranged to face each other, a vapor deposition material is placed immediately below the substrate, and the ion irradiation direction and the vapor deposition substance are in the same direction. Manufacturing method.
ン（Ｎｅ）・ヘリウム（Ｈｅ）ガスを導入して作製する
ことを特徴とする請求項１又は請求項２記載の固体電解
コンデンサの製造方法。3. The method for producing a solid electrolytic capacitor according to claim 1, wherein the ions are produced by introducing nitrogen (N 2 ) gas or neon (Ne) · helium (He) gas. .
を特徴とする請求項１〜請求項３のいずれかに記載の固
体電解コンデンサの製造方法。4. The method for producing a solid electrolytic capacitor according to claim 1, wherein the insulating film is aluminum oxide.
徴とする請求項１〜請求項３のいずれかに記載の固体電
解コンデンサの製造方法。5. The method for producing a solid electrolytic capacitor according to claim 1, wherein the insulating film is tantalum oxide.
ジメタン）錯体であることを特徴とする請求項１〜請求
項５のいずれかに記載の固体電解コンデンサの製造方
法。6. The method for producing a solid electrolytic capacitor according to claim 1, wherein the organic substance is a TCNQ (tetracyanoquinodimethane) complex.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4160136A JP3002605B2 (en) | 1992-05-26 | 1992-05-26 | Method for manufacturing solid electrolytic capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4160136A JP3002605B2 (en) | 1992-05-26 | 1992-05-26 | Method for manufacturing solid electrolytic capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH076933A true JPH076933A (en) | 1995-01-10 |
| JP3002605B2 JP3002605B2 (en) | 2000-01-24 |
Family
ID=15708656
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4160136A Expired - Fee Related JP3002605B2 (en) | 1992-05-26 | 1992-05-26 | Method for manufacturing solid electrolytic capacitor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3002605B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001073864A3 (en) * | 2000-03-24 | 2002-07-04 | Cymbet Corp | Thin-film battery having ultra-thin electrolyte and associated method |
| JP2015081365A (en) * | 2013-10-22 | 2015-04-27 | 株式会社半導体エネルギー研究所 | Film deposition device, film deposition method, and film deposition material removal method |
| US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US10658705B2 (en) | 2018-03-07 | 2020-05-19 | Space Charge, LLC | Thin-film solid-state energy storage devices |
| US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
| US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
-
1992
- 1992-05-26 JP JP4160136A patent/JP3002605B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2001073864A3 (en) * | 2000-03-24 | 2002-07-04 | Cymbet Corp | Thin-film battery having ultra-thin electrolyte and associated method |
| US9853325B2 (en) | 2011-06-29 | 2017-12-26 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US10199682B2 (en) | 2011-06-29 | 2019-02-05 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US10601074B2 (en) | 2011-06-29 | 2020-03-24 | Space Charge, LLC | Rugged, gel-free, lithium-free, high energy density solid-state electrochemical energy storage devices |
| US11527774B2 (en) | 2011-06-29 | 2022-12-13 | Space Charge, LLC | Electrochemical energy storage devices |
| US11996517B2 (en) | 2011-06-29 | 2024-05-28 | Space Charge, LLC | Electrochemical energy storage devices |
| JP2015081365A (en) * | 2013-10-22 | 2015-04-27 | 株式会社半導体エネルギー研究所 | Film deposition device, film deposition method, and film deposition material removal method |
| US10658705B2 (en) | 2018-03-07 | 2020-05-19 | Space Charge, LLC | Thin-film solid-state energy storage devices |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3002605B2 (en) | 2000-01-24 |
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