JPH0745711B2 - High directional vapor deposition equipment - Google Patents
High directional vapor deposition equipmentInfo
- Publication number
- JPH0745711B2 JPH0745711B2 JP62310822A JP31082287A JPH0745711B2 JP H0745711 B2 JPH0745711 B2 JP H0745711B2 JP 62310822 A JP62310822 A JP 62310822A JP 31082287 A JP31082287 A JP 31082287A JP H0745711 B2 JPH0745711 B2 JP H0745711B2
- Authority
- JP
- Japan
- Prior art keywords
- vapor deposition
- vapor
- vaporized substance
- substrate
- highly directional
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 この発明は蒸発物質蒸気の被蒸着基板への入射角がほぼ
一定である高指向性蒸着装置に関するものである。Description: TECHNICAL FIELD The present invention relates to a highly directional vapor deposition apparatus in which an incident angle of vaporized substance vapor on a vapor deposition substrate is substantially constant.
最近、リフトオフ法によって多層配線基板の配線層を形
成することが考えられており、リフトオフ法によって配
線層を形成するためには、高指向性蒸着装置を用いる必
要がある。Recently, it has been considered to form a wiring layer of a multilayer wiring board by a lift-off method, and it is necessary to use a highly directional vapor deposition device to form the wiring layer by the lift-off method.
従来の高指向性蒸着装置（特公昭39−4785号公報）にお
いては、蒸発物質蒸気の被蒸着基板への入射角をほぼ一
定にするため、蒸着源と被蒸着基板との間にコメリータ
を設けている。In a conventional highly directional vapor deposition device (Japanese Patent Publication No. 39-4785), a comerita is provided between the vapor deposition source and the vapor deposition substrate in order to make the incident angle of vaporized substance vapor on the vapor deposition substrate almost constant. ing.
しかし、このような高指向性蒸着装置においては、蒸発
物質のコリメータからの噴出速度が小さいから、成膜速
度を大きくすることができない。However, in such a highly directional vapor deposition apparatus, the vapor deposition rate from the collimator is low, and therefore the deposition rate cannot be increased.
この発明は上述の課題を解決するためになされたもの
で、蒸着物質の指向性が高くしかも成膜速度が大きい高
指向性蒸着装置を提供することを目的とする。The present invention has been made to solve the above problems, and an object of the present invention is to provide a highly directional vapor deposition apparatus in which the vapor deposition material has a high directivity and a film formation rate is high.
この目的を達成するため、この発明においては、蒸発物
質蒸気の被蒸着基板への入射角がほぼ一定である高指向
性蒸着装置において、密閉型のセル内に蒸発物質を入
れ、上記セルの上記被蒸着基板に対向する面に複数個の
噴出穴を設け、上記噴出穴のアスペクト比を４以上にす
る。In order to achieve this object, in the present invention, in a highly directional vapor deposition device in which the incident angle of vaporized substance vapor on a substrate to be vapor-deposited is substantially constant, the vaporized substance is put in a closed cell, A plurality of ejection holes are provided on the surface facing the deposition target substrate, and the aspect ratio of the ejection holes is 4 or more.
この高指向性蒸着装置においては、蒸発物質を加熱する
と、蒸発物質が蒸発し、その蒸発物質蒸気が噴出穴から
噴出する。In this highly directional vapor deposition apparatus, when the vaporized substance is heated, the vaporized substance vaporizes, and the vaporized vapor vapor is ejected from the ejection hole.
第１図はこの発明に係る高指向性蒸着装置を示す断面図
である。図において、６は真空チャンバで、真空チャン
バ６は真空ポンプ（図示せず）に接続されている。５は
真空チャンバ６内に設けられた被蒸着基板、１は密閉型
のセル、２はセル１内に入れられた蒸発物質、７はセル
１の被蒸着基板５に対向する面に設けられた複数個の噴
出穴で、噴出穴７のアスペクト比は４（≒1/tan15゜）
以上である。３は蒸発物質蒸気、４は噴出蒸気である。FIG. 1 is a sectional view showing a highly directional vapor deposition device according to the present invention. In the figure, 6 is a vacuum chamber, and the vacuum chamber 6 is connected to a vacuum pump (not shown). Reference numeral 5 denotes a vapor deposition substrate provided in the vacuum chamber 6, 1 is a closed cell, 2 is an evaporated substance contained in the cell 1, and 7 is a surface of the cell 1 facing the vapor deposition substrate 5. With multiple ejection holes, the aspect ratio of ejection hole 7 is 4 (≒ 1 / tan15 °)
That is all. Reference numeral 3 is vapor of vaporized substance and 4 is vapor of jetting.
この高指向性蒸着装置においては、真空ポンプにより真
空チャンバ６内を10-3Pa以下に排気したのち、蒸発物質
２を加熱すると、蒸発物質２が溶融、蒸発し、蒸発物質
蒸気３となる。この結果、セル１内の圧力は真空状態に
ある真空チャンバ６内の圧力に比べて極めて高くなり、
蒸発物質蒸気３は噴出穴７から噴出して噴出蒸気４にな
る。そして、噴出穴７のアスペクト比を４以上にしてい
るから、蒸発物質蒸気３の被蒸着基板５への入射角を15
゜以下にすることができ、蒸着物質の指向性が高い。ま
た、蒸発物質蒸気３が噴出穴７から噴出するから、蒸発
物質蒸気３の噴出速度が大きく、しかもセル１に複数個
の噴出穴７が設けられているから、蒸発物質蒸気３の噴
出量が多いので、成膜速度が大きい。In this highly directional vapor deposition apparatus, after evacuation of the vacuum chamber 6 to 10 −3 Pa or less by the vacuum pump and then heating the evaporation material 2, the evaporation material 2 is melted and evaporated to become evaporation material vapor 3. As a result, the pressure in the cell 1 becomes extremely higher than the pressure in the vacuum chamber 6 in the vacuum state,
The vaporized substance vapor 3 is ejected from the ejection hole 7 to become the ejected vapor 4. Since the ejection hole 7 has an aspect ratio of 4 or more, the incident angle of the vaporized substance vapor 3 on the deposition target substrate 5 is 15 or less.
The degree of directivity of the vapor deposition material is high. Further, since the vaporized substance vapor 3 is ejected from the ejection hole 7, the ejection velocity of the vaporized substance vapor 3 is high, and moreover, since a plurality of ejection holes 7 are provided in the cell 1, the ejection amount of the vaporized substance vapor 3 is increased. Since there are many, the film forming rate is high.
なお、被蒸着基板５を振動または移動すれば、被蒸着基
板５に付着する蒸着物質の膜厚をより均一にすることが
できる。If the vapor deposition substrate 5 is vibrated or moved, the film thickness of the vapor deposition substance attached to the vapor deposition substrate 5 can be made more uniform.
以上説明したように、この発明に係る高指向性蒸着装置
においては、噴出穴のアスペクト比を４以上にしている
から、蒸着物質の指向性が高い。また、蒸発物質蒸気が
噴出穴から噴出するから、蒸発物質蒸気の噴出速度が大
きく、しかもセルに複数個の噴出穴が設けられているか
ら、蒸発物質蒸気の噴出量が多いので、成膜速度が大き
い。As described above, in the highly directional vapor deposition device according to the present invention, since the aspect ratio of the ejection holes is 4 or more, the directivity of the vapor deposition substance is high. In addition, since the vaporized substance vapor is ejected from the ejection hole, the ejection velocity of the vaporized substance vapor is high, and since the cell is provided with a plurality of ejection holes, the ejection amount of the vaporized substance vapor is large. Is big.
第１図はこの発明に係る高指向性蒸着装置を示す断面図
である。 １……セル、２……蒸発物質、３……蒸発物質蒸気、４
……噴出蒸気、５……被蒸着基板、７……噴出穴FIG. 1 is a sectional view showing a highly directional vapor deposition device according to the present invention. 1 ... cell, 2 ... evaporated material, 3 ... evaporated material vapor, 4
...... Sprayed vapor, 5 …… Substrate to be vapor-deposited, 7 …… Spout hole
フロントページの続き (72)発明者 亀井 常彰 神奈川県横浜市戸塚区吉田町292番地 株 式会社日立製作所生産技術研究所内 (56)参考文献 特開 昭61−279668（ＪＰ，Ａ) 特開 昭60−211067（ＪＰ，Ａ)Front page continuation (72) Inventor, Tsuneaki Kamei, 292 Yoshida-cho, Totsuka-ku, Yokohama, Kanagawa Pref., Institute of Industrial Science, Hitachi, Ltd. (56) Reference JP-A-61-279668 (JP, A) JP-A-60 -211067 (JP, A)
Claims (1)
ぼ一定である高指向性蒸着装置において、密閉型のセル
内に蒸発物質を入れ、上記セルの上記被蒸着基板に対向
する面に複数個の噴出穴を設け、上記噴出穴のアスペク
ト比を４以上にしたことを特徴とする高指向性蒸着装
置。1. In a high directivity vapor deposition apparatus in which an incident angle of vaporized substance vapor on a substrate to be vapor-deposited is substantially constant, the vaporized substance is put in a closed cell, and a surface of the cell facing the substrate to be vapor-deposited. A highly directional vapor deposition apparatus, characterized in that a plurality of ejection holes are provided in the, and the aspect ratio of the ejection holes is 4 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62310822A JPH0745711B2 (en) | 1987-12-10 | 1987-12-10 | High directional vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62310822A JPH0745711B2 (en) | 1987-12-10 | 1987-12-10 | High directional vapor deposition equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01152265A JPH01152265A (en) | 1989-06-14 |
| JPH0745711B2 true JPH0745711B2 (en) | 1995-05-17 |
Family
ID=18009830
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62310822A Expired - Lifetime JPH0745711B2 (en) | 1987-12-10 | 1987-12-10 | High directional vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0745711B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2733253B1 (en) * | 1995-04-24 | 1997-06-13 | Commissariat Energie Atomique | DEVICE FOR DEPOSITING MATERIAL BY EVAPORATION ON LARGE SURFACE SUBSTRATES |
| JP4476019B2 (en) * | 2004-05-20 | 2010-06-09 | 東北パイオニア株式会社 | Deposition source, vacuum film formation apparatus, organic EL element manufacturing method |
| JP4455937B2 (en) * | 2004-06-01 | 2010-04-21 | 東北パイオニア株式会社 | Deposition source, vacuum film formation apparatus, organic EL panel manufacturing method |
| CN103741097B (en) * | 2013-12-30 | 2016-02-03 | 深圳市华星光电技术有限公司 | Vacuum deposition apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6067659A (en) * | 1983-09-21 | 1985-04-18 | Konishiroku Photo Ind Co Ltd | Thin film forming method |
| JPS60211067A (en) * | 1984-04-06 | 1985-10-23 | Mitsubishi Electric Corp | Thin film forming equipment |
| JPS61279668A (en) * | 1985-06-05 | 1986-12-10 | Mitsubishi Electric Corp | Thin film forming equipment |
-
1987
- 1987-12-10 JP JP62310822A patent/JPH0745711B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH01152265A (en) | 1989-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| WO2001036704A3 (en) | Method and apparatus for forming carbonaceous film | |
| KR930005110A (en) | Improved method of depositing materials in integrated circuit fabrication | |
| CA2107242A1 (en) | An Evaporation System for Gas Jet Deposition on Thin Film Materials | |
| TWI335356B (en) | Apparatus and method for depositing thin films | |
| FR2680799B1 (en) | TARGET ELEMENT FOR CATHODE SPRAYING, PROCESS FOR PREPARING SAID ELEMENT, AND TARGETS, ESPECIALLY LARGE AREA, MADE FROM THIS ELEMENT. | |
| JPH0745711B2 (en) | High directional vapor deposition equipment | |
| JP2009506200A5 (en) | ||
| WO2004042104A3 (en) | Thin films and methods for forming thin films utilizing ecae-targets | |
| WO2002063063A1 (en) | Film forming method and film forming device | |
| JPS59170270A (en) | Apparatus for forming film | |
| TW200925302A (en) | Evaporation equipment | |
| JPS6473075A (en) | Film forming device by ion beam sputtering | |
| JPH05230627A (en) | Vacuum deposition device | |
| JP2002525436A5 (en) | ||
| JP2548387B2 (en) | Liquid crystal alignment film manufacturing equipment | |
| JPS5462984A (en) | Masking deposition method | |
| JPS61174371A (en) | Thin film forming device | |
| JPH05320893A (en) | Thin film deposition system | |
| JPS61163267A (en) | Vacuum deposition equipment | |
| JPH04116160A (en) | Film forming device | |
| JPS5568796A (en) | Manufacture of speaker diaphragm | |
| CN120384258A (en) | PVD mask structure and process | |
| JPH02163364A (en) | Crowded metal microspherearranged body | |
| JPH0347571B2 (en) | ||
| JPS6152359A (en) | Formation of vapor deposited metal film as thermal shield |