JPH07201495A - Plasma processing apparatus and cleaning method thereof - Google Patents

Abstract

(57) [Abstract] [Purpose] A plasma can be generated even at a low pressure of 1 × 10 ^-3 Torr or less by combining inductive coupling due to the inductance of the antenna member and capacitive coupling between the antenna member and the processing container. Provided is a plasma processing apparatus capable of performing the same. In a plasma processing apparatus that performs a plasma process on an object to be processed W placed on a susceptor 26 in the processing container 4, the processing container is formed of a conductive material such as stainless steel, and faces the susceptor. The spiral antenna member 6 is provided inside or outside the processing container.
To place. A high frequency power source 8 for plasma generation is connected between the antenna member and the processing container or the susceptor, and inductive coupling due to the inductance of the antenna member,
Plasma is generated by capacitive coupling between the antenna member and the processing container.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a plasma processing apparatus and a cleaning method thereof.

[0002]

2. Description of the Related Art Generally, in a part of a semiconductor manufacturing process, for example, a plasma processing apparatus is used to perform various kinds of processing such as plasma etching on a semiconductor wafer as an object to be processed. In this type of plasma processing apparatus, for example, two flat plate-shaped electrodes are positioned in parallel in a processing container, and a high frequency voltage of 13.56 MHz, for example, is applied between them by a high frequency power source for plasma generation. As a result, plasma is generated, and the surface of the wafer is subjected to processing such as etching. In the plasma generated between the parallel plate electrodes as described above, the electric field is an alternating electric field directed from one electrode to the other electrode, and thus electrons are attracted along this electric field and collide with gas molecules, As a result, active species are generated, and the active species collide with the wafer surface to perform etching.

[0003]

By the way, high density of semiconductor products, for example, in DRAM, 4M and 16M are taken as examples.
With the shift from the bit storage capacity to the 64M and 256M bit storage capacities, finer fine processing is required. Therefore, plasma is generated in a low pressure region to improve the directionality of etching and the like. Is required.

However, in the parallel plate electrode type plasma processing apparatus as described above, an electric field is generated between both electrodes but a magnetic field is generated due to the coupling circuit formed by the electrostatic capacitance formed between the electrodes. It was difficult to do so, and therefore the confinement of the plasma by the magnetic field was not sufficient, so the pressure region of the plasma was 1 × 10 ⁻² Torr or more, and the pressure was relatively high. Therefore, the active species during etching are likely to be scattered by gas molecules and the directionality is deteriorated,
There is a problem in that etching processing having a sharp shape, which is required in a 64 M or 256 M bit DRAM or the like, cannot be performed. Further, when the etching pressure is high as described above, the by-products generated by the etching cannot be sufficiently discharged, and therefore not only the etching shape is further deteriorated but also the etching rate is lowered. Was also occurring.

In order to solve such a problem, a method of arranging a magnet above the processing container and confining the ions in the processing region by a magnetic field generated by the magnet to perform etching efficiently, and Japanese Patent Laid-Open No. Hei. As disclosed in Japanese Patent Publication No. 79027, a method has been proposed in which a high-frequency voltage is applied to both ends of a spiral coil and a high-frequency current is passed through the coil to utilize an inductance component to generate plasma.

However, a device using a magnet requires a separate mechanism for rotating the device, which undesirably increases the cost. Further, even in a so-called inductively coupled device in which a high frequency voltage is applied to both ends of the coil, it is difficult to sufficiently generate plasma in a required low pressure region.

Further, a CVD (Chemical Vapor Deposi) is used by using this type of plasma processing apparatus.
In the case of performing the film forming process by a cleaning process, the cleaning process is performed regularly or irregularly by using a cleaning gas or the like while plasma is generated in order to remove unnecessary film formation adhering to the inside of the processing container. In this case, plasma tends to concentrate mainly in the processing space just above the susceptor, and it is difficult for the active species to reach the inner wall of the processing container. Therefore, the cleaning time becomes relatively long.

The present invention focuses on the above problems,
It was created to solve this effectively. An object of the present invention is to perform plasma processing capable of generating plasma even at a low pressure of 1 × 10 ⁻³ Torr or less by combining inductive coupling due to the inductance of the antenna member and capacitive coupling between the antenna member and the processing container. To provide a device.

[0009]

In order to solve the above problems, the first invention is a plasma processing apparatus for performing a plasma processing on an object to be processed placed on a susceptor in an airtight processing container. In the above, the processing container is formed of a conductive material, an antenna member facing the susceptor is arranged, and a high frequency power supply for plasma generation is connected between one end of the antenna member and the processing container or the susceptor, The other end of the antenna member is configured to be an open end.

In order to solve the above-mentioned problems, a second aspect of the present invention is a plasma processing apparatus for performing plasma processing on an object to be processed placed on a susceptor in an airtight processing container, facing the susceptor. An antenna member having one end opened and the other end connected to a high-frequency power source for plasma generation is disposed, and a plasma density is increased on the side wall of the processing container to increase the plasma density in the processing container. Means are provided.

A third aspect of the present invention is a plasma processing apparatus for performing a plasma process on an object to be processed placed on a susceptor in an airtight processing container, the inside or outside of the processing container facing the susceptor. An antenna member is arranged, a high frequency power source for plasma generation is provided which is connected to both ends of the antenna member during plasma processing, and one end of the antenna member and one end of the high frequency power source are opened during cleaning of the processing container. The cleaning changeover switch means is provided.

[0012]

According to the first aspect of the invention, the antenna is constructed by connecting a high-frequency power source between the antenna member arranged facing the susceptor and the processing container or the susceptor, and applying a high-frequency voltage. Plasma is generated in the processing container due to the action of the electric wave from the member and the electric field between the antenna member and the processing container. This plasma is 1
Occurs even in a low pressure state of × 10 ^-3 Torr or less,
Therefore, for example, it is possible to improve the directionality during etching.

The second aspect of the present invention is configured as described above, and by connecting a high-frequency power source to the antenna member arranged to face the susceptor and applying a high-frequency voltage, a processing container is generated by radio waves from the antenna member. Plasma will be generated inside. This plasma is 1 × 10 ^-3 Torr
It also occurs in the following low pressure states. Then, the plasma density increasing means provided on the side wall of the processing container acts to further generate plasma or confine the plasma by the action of the electric field or magnetic field generated therefrom, and as a result, the processing is performed. Increase the plasma density in the container. By increasing the plasma density in this way, the etching rate can be improved at the time of etching, for example. As the plasma density increasing means, a coil part wound around the side wall of the processing container is connected to an auxiliary high frequency power supply or a DC power supply, or a permanent magnet is arranged outside the processing container, for example, at equal intervals in the circumferential direction. Can be used.

According to the third aspect of the present invention, since it is configured as described above, a high-frequency power source is connected to both ends of the antenna member arranged to face the susceptor during plasma processing, for example, plasma CVD film-forming processing, and a high-frequency voltage is applied thereto. As a result, high-density plasma is generated mainly directly below the antenna member by the radio waves from the antenna member, and a film formation process by plasma CVD is performed.

At the time of cleaning, by opening the film formation / cleaning changeover switch means, a high frequency voltage is applied only to one end of the antenna member and the other end is made an open end. As a result, an electric field is applied from the antenna member to the entire area of the processing container. Therefore, the plasma formed by this electric field spreads not only directly under the antenna member but also in the entire area of the processing container to clean the inner wall of the processing container. Can be efficiently performed.

[0016]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the plasma processing apparatus according to the present invention will be described below in detail with reference to the accompanying drawings. First, the plasma processing apparatus of the first invention will be described. 1 is a partially cutaway schematic configuration diagram showing an example of the plasma processing apparatus according to the first invention, FIG. 2 is a sectional view showing an example of the plasma processing apparatus of the present invention, and FIG. 3 is a processing container of the apparatus shown in FIG. FIG. 6 is a schematic diagram showing movement of electrons and the like.

In this embodiment, the case where the plasma processing apparatus according to the present invention is applied to a plasma etching apparatus will be described. In this plasma etching apparatus 2, an antenna member 6 is provided on the ceiling of the processing container 4, and a high frequency power source 8 for plasma generation is connected between one end of the antenna member 6 and the processing container 4 or a susceptor 26 described later. Characterized by: That is, the processing container 4 is formed in a cylindrical shape from a conductive material such as aluminum or stainless steel, and its upper end opening is made of a dielectric material such as quartz for propagating the radio wave from the antenna member 6 inside. The upper lid 10 is hermetically closed by a sealing member 12 such as an O-ring.
Forms the ceiling wall of the. Further, the lower end opening of the processing container 4 is also hermetically closed by a cylindrical inner frame 14 made of aluminum, stainless steel or the like, and a sealed processing chamber 16 is formed in the processing container 4. When aluminum is used for the processing container 4 or the inner frame 14, the surface thereof is anodized to provide a corrosion resistant coating.

The inner frame 14 includes a cylindrical wall portion 14A, a bottom portion 14B provided at a slight distance upward from the lower end of the cylindrical wall portion 14A, and an outer portion provided on the outer periphery of the lower end of the cylindrical wall portion 14A. It is composed of a flange portion 14C. Then, the processing container 4 is placed on the outer flange portion 14C so as to cover the inner frame 14 in an airtight manner.

A gas supply conduit 18 is provided above the processing container 4 so that a processing gas, such as HF gas, can be introduced into the processing chamber 16 from a processing gas source (not shown) through a mass flow controller (not shown). Has been. In addition, at the lower part on the other side of the processing container 4, the gas exhaust pipe line 2
0 is provided, and the vacuum pump (not shown) can be used to evacuate.

A susceptor assembly 22 for mounting and fixing an object to be processed, for example, the semiconductor wafer W, is arranged in the processing chamber 16. This susceptor assembly 22
The bottom portion 14 of the inner frame 14 via the plurality of insulating members 23
The susceptor assembly 22 is mounted on B and at the same time, for example, an O-ring 24 is interposed as an insulating member between the side surface of the susceptor assembly 22 and the cylindrical wall portion 14A of the inner frame 14. The assembly 22 is configured to be held in an insulated state from the inner frame 14 and the processing container 4, which are grounded externally.

The susceptor assembly 22 is formed of, for example, aluminum or the like, has a three-layer structure in the illustrated example, and has a susceptor 26 as a lower electrode on which the wafer W is mounted and a susceptor support for supporting the susceptor 26. Stand 28,
It is constituted by a cooling jacket housing base 30 provided below this. The electrostatic chuck sheet 32 is attached to the mounting surface on the upper surface of the susceptor 26 with an adhesive or the like to form an electrostatic chuck. Then, the semiconductor wafer W as the object to be processed is suction-held on the electrostatic chuck sheet 32.

The susceptor support base 28 is provided with a temperature adjusting device for adjusting the temperature of the semiconductor wafer W, for example, a ceramic heater 34. This heater 34
Is connected to a heater controller (not shown),
The temperature control is performed in response to a signal from a temperature monitor (not shown) that monitors the temperature of the susceptor 26. A high frequency power supply 38 is connected to the susceptor support base 28 via a switch 102.

The susceptor 26 is detachably fixed to the susceptor support base 28 by using a connecting member such as a bolt 36. With this configuration, the high frequency power source 3
It is possible to replace only the susceptor 26 portion separately from the susceptor support base 28 connected to the No. 8, and the maintenance of the device is facilitated. As described above, since the O-ring 24 is interposed between the side wall of the susceptor 26 and the inner surface of the cylindrical wall portion 14A of the inner frame 14, the processing gas introduced into the processing chamber is treated by the susceptor support base. It does not reach below 28 and contamination of these parts is prevented.

A cooling jacket 42 for accumulating a coolant 40 such as liquid nitrogen is installed inside the cooling jacket housing base 30. The cooling jacket 42 is connected to a liquid nitrogen source 48 by a pipe 44 via a valve 46. A liquid level monitor (not shown) is arranged in the cooling jacket 42, and by opening / closing the valve 46 in response to a signal from the liquid level monitor, the refrigerant 40, eg, liquid, in the cooling jacket 42 is opened. It is configured to control the supply amount of nitrogen. Further, the bottom surface of the inner wall of the cooling jacket 42 is formed, for example, in a porous form so that nucleate boiling can occur, and the liquid nitrogen therein can be maintained at a predetermined temperature, for example, -196 ° C. . in this way,
The configured susceptor assembly 22 is insulated from the inner frame 14 and the processing container 4 forming the processing chamber 16 by the insulating members 23 and 24, and electrically forms a cathode coupling of the same polarity. ing.

Also, between the susceptor 26 of the upper layer of the susceptor assembly 22 and the susceptor support 28 of the middle layer provided with the heater 34, and the susceptor support 2
8 and the lower cooling jacket accommodating portion 30 are formed with gaps 50 and 52, respectively, which are airtightly formed by sealing members 54 and 56 such as O-rings. And gas supply line 58
For example, it is open to the atmosphere via. Instead of opening to the atmosphere, an inert gas such as He gas or Ar gas may be supplied at a predetermined pressure, for example, 1 atm.

On the other hand, the antenna member 6 provided on the upper lid 10 made of a dielectric material such as quartz is arranged so as to face the susceptor 26 and has a diameter of 6.3, for example.
A wire 58 made of a conductive material such as 5 mm (1/4 inch) of copper or stainless steel is wound in a spiral shape about 3 to 4 times, and the terminal 6 is provided at the outer end which is one end thereof.
0 is set. This terminal 60 and the processing container 4
And a matching circuit 62 for performing impedance matching with the plasma generation, for example, 13.56 MHz
The high frequency power source 8 is connected in series, and the other end of the high frequency power source 8 can be connected to the processing container 4 or the susceptor 26 via the switch 100 or the switch 101, respectively. Therefore, this antenna member 6
To emit a radio wave toward the processing chamber and generate an electric field between the antenna member 6 and the processing container 4 or the susceptor 26, whereby plasma is generated in the processing chamber 16. That is, the circuit configuration for plasma generation in this embodiment is a combination circuit of inductive coupling due to the inductance of the antenna member 6 and container coupling formed between the antenna member 6 and the processing container 4. Further, a shield wire net 63 is provided above the antenna member 6 so as to cover the entire antenna member 6,
It prevents the radio waves from leaking to the outside.

Regarding the size of each part in this embodiment, the height and diameter of the processing container 4 are set to about 10 cm to 100 cm and 20 cm to 100 cm, respectively, and the diameter of the susceptor 26 is set to about 10 cm to 60 cm. For example, an 8-inch (about 20 cm) wafer W is placed. The distance L1 between the susceptor 26 and the upper lid 10 is set to about 100 cm or less, and the thickness L2 and the diameter L3 of the upper lid 10 are set to about 1 cm to 10 cm and 100 cm or less, respectively. The maximum diameter L4 of the antenna member 6 is substantially the same as the diameter of the wafer W, 10
It is set to about cm to 30 cm. This antenna member 6
The overall diameter of the wafer may be set larger or smaller than the diameter of the wafer as long as it is within the range in which plasma is generated.

In the above embodiment, the susceptor 26 is
A high frequency power source 38 for attracting active species is connected to the
The frequency of this high frequency is preferably in the range of 380 KHz to several MHz. In addition, the voltage applied to the susceptor 26 is
A high frequency voltage having a reverse phase to the high frequency applied to the antenna member 6 may be used. Further, the potential of the susceptor 26 may be dropped to the ground or may be in the floating state. Furthermore, this susceptor 26 has several hundred
A bias voltage of KV may be applied.

Next, the operation of this embodiment configured as described above will be described. First, the semiconductor wafer W is housed in the processing chamber 16 by a transfer arm (not shown) via a gate valve (not shown), and is placed on the electrostatic chuck sheet 32 provided on the placement surface of the susceptor 26. A DC voltage of, for example, 2.0 KV is applied to the conductive film 32A of the electrostatic chuck sheet 32 from a high voltage DC source (not shown), and the wafer W is attracted and held by the Coulomb force due to polarization.

The inside of the processing chamber 16 is evacuated in advance by a vacuum pump (not shown) connected to the gas exhaust pipe 20, and a processing gas, for example, HF gas, is supplied through the gas supply pipe 18. Is supplied while controlling the flow rate, and the process pressure in the processing chamber 16 is, for example, 1 × 10 ⁻³ Torr.
The pressure is maintained at a considerably low level, and at the same time, a high frequency power of, for example, 13.56 MHz is applied between the antenna member 6 and the processing container 4 from the high frequency power source 8 for plasma generation.
Then, a radio wave is emitted toward the processing chamber 16 by the inductive action of the inductance component of the antenna member 6, and at the same time,
An alternating electric field is generated in the processing chamber 16 by the action of the capacitive component between the antenna member 6 and the processing container 4, and as a result, the processing gas is ionized and plasma is generated in the processing chamber 16, which is generated by plasma discharge excitation. The active species can perform very anisotropic etching on the wafer surface.

FIG. 3 schematically shows the movement of electrons and anions 64 in the processing chamber 16 at this time. The anions move to the susceptor 26 side while spirally swirling due to the action of radio waves and electric fields. However, as compared with the conventional parallel plate electrode type device, the movable distance of the negative ions 64 becomes longer, and during this period, many ions collide with gas molecules and a lot of ions are generated. Therefore, the etching rate can be improved accordingly. The plasma is 1 × 10 ⁻³ Tor.
Since it is generated even under a considerably low pressure between r and 1 × 10 ⁻⁶ Torr, scattering of active species during etching is small and the directionality is uniform, and therefore, as described above, the anisotropy is high. That is, etching processing having a sharp shape can be performed, and for example, fine processing required for 64M or 256M bit DRAM can be performed.

Here, during the etching process of the wafer W, cold heat from the cooling jacket 42 provided in the cooling jacket housing 30 is applied to the susceptor support 28 and the susceptor 26.
Then, the low temperature etching is performed in the order of the wafer W and the processing temperature of the wafer W is controlled by controlling the heat generation amount of the heater 34 provided on the susceptor support 28 at this time. In this case, the gap 52 between the cooling jacket housing 30 and the susceptor support 28 and the susceptor support 28
In order to improve the heat transfer property in the gap 50 between the wafer W and the susceptor 26, for example, the atmosphere of 1 atm is introduced, and the wafer W
Maintains heat transfer efficiency to. Then, by lowering the temperature of the wafer W as described above, further miniaturization of etching can be promoted.

As a result of combining the inductive coupling due to the inductance of the antenna member 6 and the capacitive coupling between the antenna member 6 and the processing container 4 as in the present embodiment, as a result, actually, an extremely high value of 1 × 10 ^-6 Torr is achieved. Plasma could be generated even under vacuum. Although a wire rod is used as the antenna member 6 and the diameter of the entire antenna member is about 20 cm in the above embodiment, the material, size, etc. are not limited to this. For example, the antenna member shown in FIGS. 4 to 11 can also be adopted.

The antenna member 6 shown in FIG. 4 is formed by winding a wire made of a conductive material in a spiral shape like the antenna member shown in FIG. 1, and the terminal 6 is provided at the inner end instead of the outer end.
0 is provided, and a high frequency power source 8 for plasma generation is connected thereto. The antenna member 6 shown in FIG. 5 is not formed by winding a wire made of a conductive material a plurality of times as shown in FIG. 4, but is wound only once so as to correspond to a relatively large diameter, for example, a wafer diameter. A terminal 60 is provided at the end.

The antenna member 6 shown in FIG. 6 is formed by bending a long wire made of a conductive material back and forth in a meandering shape.
A terminal 60 is provided at the end thereof. In the antenna member 6 shown in FIG. 7, a long wire made of a conductive material is bent in an amorphous manner, and a terminal 60 is provided at the end thereof.

In the antenna member 6 shown in FIG. 8, a long hollow pipe 66 made of a conductive material such as copper or stainless steel, not a wire material, is spirally wound in the same manner as shown in FIG. 4, and the terminal 60 is provided at this end. It is provided. In the antenna member 6 shown in FIG. 9, a hollow pipe 66 made of a relatively long conductive material having a length of about 200 mm is linearly provided, and a terminal 60 is provided at this end portion.

The antenna member 6 shown in FIG. 10 has a hollow pipe 66 made of a relatively long conductive material once or twice.
It is bent in a U shape once and a terminal 60 is provided at its end. The antenna member 6 shown in FIG. 11 has a width of 20 mm.
A conductive plate 68 made of a conductive material such as stainless steel is spirally wound about once and a half or twice, and a terminal 60 is provided at the end thereof.

When an experiment was conducted using the antenna member shown in FIGS. 4 to 11, 5.0 to 1.0 × 10
It was confirmed that plasma was generated at a low pressure of ^-4 Torr. In this experiment, the other end of the high-frequency power source 8 for plasma generation is connected to either the processing container 4 or the susceptor 26 or the processing container 4 and the susceptor 26 at the same time by switching the switches 100, 101, and 102. Of course, inductive coupling and capacitive coupling are combined.

On the other hand, when the other end of the high frequency power source 8 for plasma generation is not connected to either the processing container 4 or the susceptor 26 even when the antenna member shown in FIG. Even when the other end of the high frequency power source 8 for use in the equipment is connected to the processing container 4 or the susceptor 26, when the antenna member shown in FIGS. 12 to 15 is used, 5.0 to 1.0 × 10 It was not possible to generate plasma under a low pressure of ^-4 Torr. That is, the antenna member 70 shown in FIG.
A flat plate 72 made of a conductive material having a thickness of about 0 mm is used, and a terminal 60 is provided at one corner thereof.

The antenna member 70 shown in FIG. 13 is formed by bending a relatively short and narrow stainless plate 74 into a substantially rectangular shape, and the terminal 60 is provided at the end thereof. In the antenna member 70 shown in FIG. 14, a hollow pipe 76 made of a conductive material such as copper having a relatively short length of about 100 mm is linearly formed, and a terminal 60 is provided at the end thereof. In an antenna member 70 shown in FIG. 15, a hollow pipe 76 having a relatively short length of about 100 mm is formed by bending a tip, and the terminal 60 is provided at the other end.

Even if the antenna member 76 shown in FIGS. 12 to 15 is used as described above, all of them are 5.0 to 1.0 × 1.
Plasma could not be generated under a low pressure of 0 ^-4 Torr. Although the case where each antenna member 6 is provided outside the processing container 4 has been described in each of the above-described embodiments, the present invention is not limited to this, and the antenna member 6 may be provided inside the processing container 4 as shown in FIG. It may be accommodated.

That is, in this case, for example, the wire 58 which constitutes the antenna member 6 is covered with an insulator 78 made of ceramic, polyimide polymer, SiC (silicon carbide) or the like to prevent metal contamination, and this is covered. Processing container 4
Install it on the ceiling side. In this case, since the antenna member 6 is provided in the upper portion of the processing chamber 16, the ceiling portion of the processing container 4 may be integrally formed of, for example, stainless steel like the side wall. It is not necessary to use the quartz upper lid 10 used.

The power supply line 8 from the high frequency power source 8 for plasma generation connected to the wire rod 58 of the antenna member 6 is also provided.
Reference numeral 0 indicates that the ceiling of the processing container 4 is inserted into the container via the insulating material 82. By housing the antenna member 6 in the processing container 4 in this way, the distance between the wafer W and the antenna member 6 is shortened, and the plasma generation efficiency can be improved.

In the embodiment of FIG. 16, the case where the antenna member 6 is composed of the wire rod 58 is shown, but instead of the wire rod 58 as shown in FIG. 17, it is as shown in FIG. A spiral hollow pipe 66 made of a conductive material is used, and an insulator 78 is coated on the outside thereof. Further, a large number of gas ejection holes 84 directed through the hollow pipe 66 and the insulator 78 and directed into the processing chamber 16 are formed. Then, to one end of the spiral hollow pipe 66, a gas supply pipeline 86 made of a conductor that penetrates the container ceiling through an insulating material 82 is connected. The processing gas can be supplied into the processing container 4 in the form of a shower.

Then, the power supply line 80 of the high frequency power source 8 for plasma generation is connected to the gas supply line 86. Thus, by using the antenna member 6 also as the processing gas supply head, it is possible to efficiently supply the processing gas.
In the case of this embodiment, it goes without saying that the gas supply conduit 18 provided on the side wall of the processing container 4 in FIG. 2 can be omitted.

Further, as a modification of the apparatus shown in FIG. 17, the apparatus shown in FIG. 18 may be used. That is, the upper part of the inside of the processing container 4 is provided with an insulator 92 which is divided into an upper insulating plate 88 and a lower insulating plate 90, and a wire rod 58 is provided between the upper insulating plate 88 and the lower insulating plate 90. The antenna member 6 formed in a spiral shape is sandwiched. The wire 58 is connected to the power supply line 80 from the high frequency power source 8 as shown in FIG. 16, while the upper and lower insulating plates 8 are connected.
A large number of gas passages 94 are formed in each of the gas passages 8 and 90, and a gas supply pipe line 86 for a processing gas is connected to the gas passages 94.

Then, a large number of processing gas supplied to the gas passage 94 is formed on the lower surface of the lower insulating plate 90, and the gas injection port 9 is formed.
It is configured to inject from 6 to the processing chamber 16.
In the above embodiment, the plasma etching processing apparatus has been described as an example, but the present invention is not limited to this and can be applied to all other plasma processing apparatuses, for example, a plasma CVD apparatus. When the present invention is applied to a plasma CVD apparatus, for example, TiN ₄ and NH ₃ gas or a processing gas in which hydrazine is combined is supplied to supply TiN 4 gas.
A film of (titanium nitride) is formed. in this case,
When a groove or the like formed on the wafer surface is embedded by film formation, plasma is generated in a low pressure atmosphere of 1 × 10 ⁻³ Torr, so that ion scattering is suppressed as in the case of etching. It is possible to embed the groove portion without causing voids or the like.

Next, the second invention will be described. By using the antenna member with one end opened as in the above-mentioned first invention, plasma can be generated even in a high vacuum state of 1 × 10 ⁻⁶ Torr.
In the invention, the plasma density increasing means is provided to increase the plasma density generated above. still,
The same parts as those of the processing apparatus of the first invention shown in FIGS. 1 and 2 are designated by the same reference numerals and the description thereof will be omitted.

FIG. 19 is a schematic perspective view showing a plasma processing apparatus according to the second invention. This plasma processing apparatus 1
At 00, a susceptor assembly 22 having the same structure as the apparatus of the first invention is housed in the processing container 102, and the semiconductor wafer W to be processed is placed on the susceptor assembly 22. The lower part of the processing container 102 is sealed by a bottom part 14B made of, for example, stainless steel, and a gas exhaust pipe 20 for discharging the atmosphere in the container is connected to the bottom part 14B. Further, in the susceptor 26 provided above the susceptor assembly 22, a high frequency power source 38 of, for example, several 100 KHz is provided in the capacitor 104 in order to attract active species generated by plasma to the wafer W side.
Connected through.

The upper lid 10 of the processing container 102 is
Similar to the case of the first invention, it is made of a quartz dielectric material such as quartz having a thickness L1, and a similar antenna member 6 wound in a spiral and flat shape is disposed on the upper portion thereof. There is. One end of the antenna member 6, for example, the center side is made an open end, and the other end on the outer peripheral side is for generating plasma of, for example, 13.56 MHz from the terminal A through the matching circuit 62 as in the first invention. High frequency power source 8 is connected. By the action of the antenna member 6, plasma can be generated even in a low-pressure vacuum atmosphere as in the first aspect of the invention. The processing container 1
The side wall portion 102A of No. 02 is made of, for example, stainless steel in the case of the first invention, but in the present invention, is made of a quartz dielectric such as quartz similar to the material of the lid 10. .

Then, the side wall portion 10 of the processing container 102
2A is provided with a plasma density increasing means 106 for increasing the plasma density, which is a feature of the present invention. Specifically, the plasma density increasing means 106 includes a coil portion 108 wound a plurality of times along the outer periphery of the side wall portion 102A and a matching circuit 110 on terminals B and C at both ends of the coil portion 108. Connected via, for example, 13.
It is composed of a 56 MHz auxiliary high frequency power supply 112. By applying a high frequency voltage from the auxiliary high frequency power supply 112 to both ends of the coil portion 108, plasma is generated between the coil portion 108 and the susceptor 26, and the plasma density in the container can be improved. Becomes If a helical resonance type coil is used as the coil 108, only the electrons can be accelerated by the action of the propagating low-frequency helicon wave, and the plasma density can be further improved. In this case, in order to efficiently generate plasma, it is preferable to wind the coil portion 108 over the entire side wall portion 102A located above the susceptor 26.

Next, the operation of this embodiment configured as described above will be described. First, from the gas supply line 18,
By applying a high-frequency voltage to the antenna member 6 from the high-frequency power source 8 while flowing a processing gas, for example, HF gas, the radio waves emitted from the antenna member 6 act and the first
1 × 10 ⁻³ or less, for example, 1 × 10 ³ as in the case of the invention of
Plasma is generated even under a high vacuum pressure reduction of about ^-6 Torr. This antenna member 6 has a function as a so-called ignition source for plasma in this embodiment. In this case, this antenna member 6
Although the plasma density cannot be increased only by the plasma generated by the above, however, in this embodiment, the plasma density increasing means 106 is provided on the side wall portion 102A.
The plasma density can be maintained high because the plasma density is high. That is, by applying a high frequency voltage from the auxiliary high frequency power supply 112 to the coil portion 108 wound around the side wall portion 102A, an alternating magnetic field is generated in the processing chamber, and this alternating magnetic field is generated by the action of the antenna member 6 described above. Further, plasma is synergistically generated due to the plasma attracting action, so that the plasma density in the processing chamber can be increased. Then, the scattering of active species and the like caused by the plasma discharge excitation is suppressed, and the wafer surface can be subjected to very anisotropic etching.

In this case, since the plasma density can be particularly increased, the anisotropy can be further improved and the processing efficiency can be increased. In this example, the plasma density could be set to 1 × 10 ¹⁰ / cm ³ or more. High frequency power source 8 for plasma generation in the above embodiment
And the frequency of the auxiliary high frequency power supply 112 is 13.5.
It is not limited to 6 MHz, and can be used over a wide range of 2 to 50 MHz, for example.

In the above embodiment, the high frequency power source 8 for plasma generation and the auxiliary high frequency power source 112 are provided as separate bodies, but the present invention is not limited to this. For example, as shown in FIG. Three taps 114A on both ends,
Connect the transformer 114 having 114B and 114C,
One of the two ends, such as tap 114A
Is connected to a terminal A that is electrically connected to the antenna unit 6 via the matching circuit 62. In addition, the intermediate tap 114B is connected to the terminal B that conducts to one side of the coil portion 108, and the tap 1 at the other end is connected.
14C to the coil unit 10 via the matching circuit 110.
8 is connected to the other terminal C. Then, in order to adjust the phase of the high frequency voltage applied to the antenna member 6 and the coil portion 108, the phase shifter 116 is provided in either one of the circuits, in the illustrated example, for example, the circuit connected to the antenna member 6. Intervene. According to this, the number of high-frequency power supplies can be reduced, and the manufacturing cost can be reduced.

Further, instead of the auxiliary high frequency power supply 112 and the matching circuit 110 shown in FIG. 19, a variable DC power supply 118 (shown by a virtual line in the drawing) is provided to apply a DC voltage to the coil section 108. You may According to this, according to the polarity of the DC power supply 118, the processing container 10
A magnetic field directed upwards or downwards is formed in the space 2, so that the plasma generated by the antenna member 6 is restrained by this magnetic field and stays in the processing container 102 for a correspondingly long time, which makes it difficult to disappear. In addition, it is possible to improve the plasma density in the processing chamber. In this case, it is preferable to set the voltage of the DC power supply 118 to a voltage in the range of about 0 to 500V. Further, when the apparatus is not used, the switch means (not shown) is opened to stop the application of the DC voltage to the coil portion 108 and suppress the influence of the magnetic field on the peripheral equipment and the like.

In the above embodiment, the plasma density increasing means 106 is constituted by the auxiliary high frequency power source 112 or the direct current power source 118 and the coil portion 108 connected to the auxiliary high frequency power source 112. Also, it may be configured as shown in FIG. 21 and 22 show the second
It is a diagram showing a modified example of the invention of, in this embodiment, instead of the coil portion 108 and the auxiliary high frequency power supply 112,
As the plasma density increasing means 106, a plurality of permanent magnets 120 are arranged outside the side wall portion 102A of the processing container 102.

Specifically, the permanent magnets 120 are formed in a bar shape extending along the height direction of the processing container 102, and eight permanent magnets 120 are provided at equal intervals along the circumferential direction of the container 102 in the illustrated example. It is arranged. The number of magnets 120 is not limited to eight. Further, the permanent magnets 120 are arranged so that the N poles or the S poles are along the side wall portion 102, and the polarities of the adjacent permanent magnets 120 are set to be alternately opposite to the container center direction.

By arranging the permanent magnet 120 as the plasma density increasing means 106 in this way, a strong magnetic field 12 from the north pole to the south pole of the permanent magnet 120 is disposed in the processing chamber.
2, the plasma generated under high vacuum by the action of the antenna member 6 is restrained and confined in the container by the action of the magnetic field 122, and the disappearance thereof is suppressed. This effect is more strongly exhibited as the magnitude of the magnetic field 122 is larger, and it is preferable to set it to, for example, 5 gauss or more under a high vacuum of 1 × 10 ⁻⁶ Torr.
Due to the effect of confining the plasma by the magnetic field 122, the plasma density can be maintained at a considerably high level even in a low pressure atmosphere of 1 × 10 ⁻⁶ Torr, and highly anisotropic etching or the like can be performed.

Next, another modification of the second invention will be described. FIG. 23 is a diagram showing another modification of the second invention. In this modification, the plasma density increasing means 1 is used.
The configuration of 06 is similar to that shown in FIG.
The shape of the processing container 102 and the shape of the antenna unit 6 are different.

Specifically, the processing container 102 is formed of a dielectric such as quartz in a bell jar shape and has a small capacity, and a first chamber 124 having a small capacity and a second chamber 126 having a large capacity and connected below the first chamber 124. It is composed of The second chamber 126 is configured as a processing chamber, the susceptor assembly 22 is housed in the second chamber 126, and the side wall portion 102A of the second chamber 126 is shown in FIG.
A plasma density increasing means 106 having a configuration similar to that shown in FIG. 2 and including, for example, a helical resonance type coil portion 108 and an auxiliary high frequency power source 112 is arranged.

On the side wall of the first chamber 124, the antenna member 6 made of a linear conductor is spirally wound a plurality of times, one end of which is an open end and the other end of which is matched. A high frequency power source 8 for plasma generation is connected via a circuit 62. A gas supply conduit 18 for supplying a processing gas or the like is connected to the ceiling of the first chamber 124, and, for example, Ar gas or HF gas introduced into this is supplied from the antenna unit 6. By the action of the electromagnetic wave, it can be turned into plasma even in a low pressure atmosphere of about 1 × 10 ⁻⁶ Torr.
In such an embodiment, the etching gas such as Ar gas flowing into the first chamber 124 from the gas supply line 18 is affected by the electromagnetic waves from the antenna portion 6 wound around the side wall of the second invention. 1 × 1 as described in
Even under a high vacuum of about 0 ^-6 Torr, plasma is generated.

The plasma generated here moves into the second chamber 126 below, and the coil portion 1 wound around the side wall portion 102A of the second chamber 126.
Since a high frequency voltage of, for example, 13.56 MHz is applied to both ends of 08, the upper first chamber 12
As a result of being attracted to the plasma flowing in from No. 4, Ar gas or the like is also excited in the second chamber 126, and the generation of plasma is promoted. Ie 1 by itself
By supplying the plasma generated in the first chamber 124 to the second chamber 126, which is difficult to generate the plasma at a low pressure of 10 ⁻³ Torr or less, the second chamber 126 is attracted to the second chamber 126 to generate the second chamber. It is possible to generate plasma even within 126. Therefore, as a result, the plasma density in the processing chamber can be greatly increased even in a low-pressure atmosphere of 1 × 10 ⁻⁶ Torr, and etching with extremely high anisotropy can be performed.

In this case, by making the pressure in the first chamber 124 slightly positive than the pressure in the second chamber 126, the plasma and the active species generated in the first chamber 124 become the first pressure. The second chamber 126 can be smoothly transferred to the second chamber 126, and conversely, plasma generated in the second chamber 126 can be prevented from flowing back into the first chamber 124. It is possible to further improve the density. Further, by using different high-frequency power sources 8 and 112 as the energy supply source for the antenna section 6 and the coil section 108 therebelow, these can be controlled separately and fine-tuned plasma control becomes possible.

Further, in the present embodiment, the coil portion 10
A variable DC power supply may be used instead of the auxiliary high frequency power supply 112 and the matching circuit 110 connected to the same circuit 8 as described in the configuration shown in FIG. Instead of the plasma density increasing means 106 composed of 112, a plasma density increasing means composed of a plurality of permanent magnets 120 having the same configuration as described in FIGS. 21 and 22 may be used.

In the second invention as well, the plasma etching processing apparatus has been described as an example, but the present invention is not limited to this, and all other plasma processing apparatuses, for example, plasma C.
It can also be applied to a VD device. In this case, as described in the above embodiment, the scattering of active species of plasma and reactive gas is suppressed and the anisotropy is improved, and as a result, for example, filling of the groove portion without causing voids can be performed. It can be carried out.

In each of the above embodiments, the case where the high frequency voltage is applied to one end of the antenna member during the plasma processing has been described, but the present invention is not limited to this, and the application of the high frequency voltage to the antenna member is different. Paying attention to the difference in the plasma formation region caused by the above, the method of applying the high frequency voltage may be changed as follows between the plasma processing and the cleaning. 24 and 25 are sectional views showing the plasma processing apparatus of the third invention.

In the third invention, the case where the plasma processing apparatus is applied to a plasma CVD apparatus will be described. In this type of plasma CVD apparatus, since unnecessary film formation adheres to the inner wall of the processing container during the film formation process, a cleaning process for removing the unnecessary film is performed regularly or irregularly. The cleaning method is efficiently performed by changing the method of applying the high-frequency voltage during the cleaning processing to the method of applying during the plasma film formation processing. The same parts as those of the first invention shown in FIGS. 1 and 2 are designated by the same reference numerals.

Plasma C as this plasma processing apparatus
The VD device 150 also has a cylindrical processing container 4 made of, for example, aluminum or the like as in the first invention. The processing container 4 is grounded and the upper end opening is made of an upper dielectric material such as quartz. The lid 10 is airtightly closed via a seal member 12. In the processing container 4, a susceptor 26 made of, for example, aluminum as a lower electrode having a mounting surface on which the semiconductor wafer W is mounted is mounted on a susceptor support base 28. The susceptor support base 28 is a processing container. It is installed on the bottom via an insulating member 23. The susceptor 26 is connected to a matching box 154 and a bias high-frequency power source 156 of 13.56 MHz, for example, via a power supply line 152, and a wafer holding means 157 composed of, for example, an electrostatic chuck is mounted on the mounting table.
Is provided so that the wafer can be adsorbed and held by Coulomb force.

The susceptor support base 28 is provided with, for example, a cooling jacket 158 for flowing cooling water, and the joint between the susceptor support base 28 and the susceptor 26 is provided with heating means 160 such as a ceramic heater. By combining this with the cooling jacket 158, the wafer temperature can be set over a wide range. At the bottom of the processing container, an exhaust port 1 connected to a vacuum pump (not shown) that evacuates the inside of the container.
A gate valve 16 is provided on the side wall of the container and is opened / closed when the wafer W is loaded / unloaded into / from the container.
Two are provided.

Further, on the side wall of the processing container 4, there is provided a processing gas supply nozzle 164 for introducing a film forming gas for film formation, a cleaning gas for etching, etc. into the container, and the supply side is branched to this nozzle. A source gas source, for example, a silane source 168, an etching gas source 170, for example, a carrier gas source 172 such as N ₂ are connected to each of the branched passages 166, and mass flow controllers 174A and 174B for controlling the flow rate in each branch passage. , 174C and on-off valves 176A, 176B, 176C. Further, on the side wall of the processing container 4, an additive gas supply nozzle 17 for supplying an additive gas such as argon gas or O ₂ at the time of film formation.
No. 8 is provided, an argon gas source 182 and an oxygen source 184 are connected to this nozzle via a gas passage 180, and a mass flow controller 186 and an on-off valve 188 are provided in each branch passage of this gas passage 180. There is. still,
The raw material gas and the additive gas are not limited to those described above, and a gas used in a normal plasma CVD process can also be applied.

On the upper surface of the upper lid 10, there is provided an antenna member 6 having the same structure as that shown in FIGS. 1 and 2, which is a feature of the present invention. This antenna member 6 also includes a wire 58 made of a conductive material such as copper or stainless steel.
The antenna member 6 is configured to be wound or wound in a spiral shape about 2 to 3 times, and the matching circuit 62 and the plasma generator, for example, 1
A high-frequency power source 8 of 3.56 MHz is connected in series. The power supply line 190 connecting one end of the antenna member 6 and one end of the high frequency power source 8 is provided with a cleaning switch means 192 that is closed during the film forming process and opened during the cleaning process. By switching the means 192, the method of supplying power to the antenna member 6 is switched between the film formation and the cleaning. Further, a shield wire net 63 is provided above the antenna member 6 so as to cover the whole.

The cross-sectional shape of the antenna member 6 is not particularly limited, and may be circular as in the illustrated example or rectangular. Further, the size of each unit is configured in the same manner as, for example, the device shown in FIGS. The source gas is not limited to silane, but other source gases such as disilane and TE
Of course, OS-based source gas or the like can be used.

Next, the operation of the third invention will be described. First, a case where a film forming process is performed using this apparatus will be described. After the wafer W is adsorbed and held on the susceptor 26, the wafer W is maintained at a process temperature, for example, about 400 ° C., and the inside of the processing container 4 is kept at a predetermined pressure, for example, about 10 mTorr, while a source gas such as a silane gas and an additive gas. For example, Ar gas and O ₂ are introduced into the container at a predetermined flow rate. Simultaneously with the supply of the raw material gas and the like, the film formation / cleaning changeover switch means 192 is closed to apply a high frequency voltage from the high frequency power source 8 to both ends of the antenna member 6. Thereby, since the high frequency voltage is applied to both ends of the antenna member 6, the antenna member 6 is
In a region directly below the wafer W, that is, in a region above the wafer W, the intensity of radio waves is increased, plasma P1 is generated in this region, and the source gas and the additive gas are excited to become active species to promote the reaction, so that the reaction is accelerated on the wafer W. A film is deposited. In this case, the attraction of plasma may be promoted by applying a high frequency bias voltage to the susceptor 26.
Further, this may be dropped on the ground or may be in a floating state. As described above, by strengthening the radio wave immediately below the antenna member 6, high-density plasma can be condensed in this portion, and the film formation process can be performed quickly and highly efficiently.

Next, description will be made on the case of performing the cleaning process for the unnecessary film deposited in the processing container. First,
The dummy wafer W is adsorbed and held on the susceptor 26 for the purpose of protecting the electrostatic chuck, and the etching gas source 1 is completely stopped with the supply of the source gas and the additive gas during film formation.
While supplying an etching gas such as CF ₄ , NF ₃ system gas, ClF ₃ system gas from 70 at a predetermined flow rate, the inside of the container is maintained at a predetermined vacuum state, for example, 20 mTorr or less. When CF ₄ and NF ₃ system gases are used as the etching gas, they are supplied alone, while when ClF ₃ system gas is used as the etching gas, N 4 is used as the carrier gas from the carrier gas source 172. ₂ Gas is also supplied at a specified flow rate. At the same time as the etching gas is supplied, the film formation / cleaning changeover switch 1
As shown in FIG. 25, 92 is opened and one end of the antenna member 6 and one end of the high frequency power source 8 are opened, and a high frequency voltage from the high frequency power source 8 is applied only to the other end.

As a result, an electric field is applied from the antenna member 58 to the entire inner wall of the processing container 4, and as a result, plasma P2 rises in substantially the entire area of the container as shown in FIG. Not only immediately below 6, but also in every corner of the processing container, the unnecessary film formed on the inner wall of the processing container 4 and the surfaces of the susceptor 26 and the susceptor support 28 is removed to perform cleaning. In this way, the plasma uniformly spreads in the processing container 4 over substantially the entire area, so that the cleaning operation can be performed quickly and in a short time. In this case, a high frequency voltage for bias may be applied to the susceptor 26 as in the case of film formation, or it may be grounded or may be in a floating state. Further, instead of dropping the side wall of the processing container 4 to the ground, a high-frequency voltage for bias may be applied to the side wall of the processing container 4 or it may be in a floating state.

As the etching gas, CF ₄ ,
The etching gas is not limited to the NF ₃ and ClF ₃ system gases, other etching gas may be used, and the frequency of the high frequency power source is 1
Not limited to 3.56 MHz, 200 KHz and the like KHz
To several tens of MHz can be used.
In the present embodiment, an apparatus of the type in which the antenna member 6 is arranged on the outside of the ceiling of the processing container 4 as shown in FIG. 2 has been described as an example, but the present invention is not limited to this and is shown in FIGS. As described above, the antenna member 6 can also be applied to an apparatus of the type in which it is arranged on the ceiling of the processing container 4.

[0077]

As described above, according to the plasma processing apparatus of the present invention, the following excellent operational effects can be exhibited. According to the first aspect of the invention, since the plasma is generated by combining the inductive coupling by the antenna member and the container coupling between the antenna member and the processing container, plasma is generated in the conventional parallel plate type electrode structure. The object to be processed can be processed by generating plasma even under a vacuum degree higher than 1 × 10 ⁻³ Torr, which was not obtained. Therefore, in such a vacuum atmosphere, it is possible to suppress the scattering of ions and the like, so that the anisotropy of the processing and the processing rate are improved without complicating the apparatus, and the etching pattern interval can be made finer. It is possible to improve the uniformity of the film thickness of the fine etching process or the film formation on the object to be processed. According to the second invention, since the plasma density increasing means for increasing the density of the plasma generated by the action of the antenna member is provided, 1 ×
It is possible to generate a high-density plasma even under a high vacuum of 10 ⁻³ Torr or less, for example, 1 × 10 ⁻⁶ Torr. Therefore, the anisotropy and the processing rate can be further increased by suppressing the scattering of ions and the like. According to the third aspect of the present invention, a high frequency voltage is applied to both ends of the antenna member during the film formation process by plasma so that the high density plasma is condensed in the processing container immediately below the antenna member to accelerate the process. Also, during cleaning, a high-frequency voltage was applied to only one end of the antenna member and the other end was left open, so that plasma was formed over a wide area in the processing container, and active species were sufficiently supplied to the inner wall of the processing container. Therefore, the cleaning process can be efficiently performed in a short time.

[Brief description of drawings]

FIG. 1 is a partially cutaway schematic configuration diagram showing an example of a plasma processing apparatus according to a first invention.

FIG. 2 is a sectional view showing an example of a plasma processing apparatus of the present invention.

FIG. 3 is a schematic diagram showing movement of electrons and the like in a processing container of the apparatus shown in FIG.

FIG. 4 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 5 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 6 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 7 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 8 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 9 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 10 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 11 is a plan view showing a modified example of the antenna member used in the present invention.

FIG. 12 is a plan view showing an antenna member that cannot generate plasma in a low pressure atmosphere.

FIG. 13 is a plan view showing an antenna member that cannot generate plasma in a low pressure atmosphere.

FIG. 14 is a plan view showing an antenna member that cannot generate plasma in a low pressure atmosphere.

FIG. 15 is a plan view showing an antenna member that cannot generate plasma in a low pressure atmosphere.

FIG. 16 is a partial cross-sectional view showing a modified example of the plasma processing apparatus of the present invention.

FIG. 17 is a partial cross-sectional view showing another modified example of the plasma processing apparatus of the present invention.

FIG. 18 is a partial cross-sectional view showing still another modified example of the plasma processing apparatus of the present invention.

FIG. 19 is a schematic perspective view showing a plasma processing apparatus according to a second invention.

20 is a circuit diagram showing an example of a high frequency power supply applicable to the device shown in FIG.

21 is a schematic perspective view showing a modified example of the invention of FIG. 2. FIG.

22 is a diagram showing an arrangement of permanent magnets of the device shown in FIG. 21. FIG.

FIG. 23 is a schematic perspective view showing another modification of the second invention.

FIG. 24 is a sectional view showing a plasma processing apparatus of a third invention.

FIG. 25 is a cross-sectional view showing a state where cleaning is performed by the processing apparatus shown in FIG.

[Explanation of symbols]

2 Plasma Etching Device (Plasma Processing Device) 4 Processing Container 6 Antenna Member 8 High Frequency Power Supply for Plasma Generation 16 Processing Chamber 18 Gas Supply Pipeline 20 Gas Exhaust Pipeline 26 Susceptor 32 Electrostatic Chuck Sheet 34 Ceramic Heater 42 Cooling Jacket 58 Wire Rod 60 Terminal 62 Matching circuit 63 Shield wire mesh 66 Hollow pipe 68 Conductive plate 84 Gas ejection hole 100 Plasma processing device 102 Processing container 102A Side wall part 106 Plasma density increasing means 108 Coil part 112 Auxiliary high frequency power supply 118 DC power supply 120 Permanent magnet 122 Magnetic field 124th 1 chamber 126 2nd chamber 150 Plasma CVD apparatus 164 Processing gas supply nozzle 168 Silane source 170 Etching gas source 172 Carrier gas source 178 Additive gas supply nozzle 182 argon gas source 192 deposited cleaning selector switch means P1, P2 plasma W workpiece (semiconductor wafer)

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification number Office reference number FI technical display location C23F 4/00 E 8417-4K H01L 21/205 21/3065 H01L 21/302 N (72) Inventor Jiro Hata, 2-3-1, Nishi-Shinjuku, Shinjuku-ku, Tokyo Within Tokyo Electron Limited (72) Inventor Nobuo Ishii 2-3-1, Nishi-Shinjuku, Shinjuku-ku, Tokyo Within Tokyo Electron Limited

Claims (9)

[Claims] 1. A plasma processing apparatus for performing plasma processing on an object to be processed placed on a susceptor in an airtight processing container, wherein the processing container is made of a conductive material and an antenna facing the susceptor. A plasma processing apparatus, wherein a member is arranged, a high frequency power source for generating plasma is connected between one end of the antenna member and the processing container or the susceptor, and the other end of the antenna member is an open end. 2. The plasma processing apparatus according to claim 1, wherein a wall portion of the processing container located between the antenna member and the susceptor is made of a dielectric material. 3. A processing gas is introduced into the processing container to
3. The plasma processing apparatus according to claim 1, wherein the object to be processed is plasma-processed while maintaining the degree of vacuum between 0 Torr and 1 × 10 ⁻⁶ Torr. 4. A plasma processing apparatus for performing plasma processing on an object to be processed placed on a susceptor in an airtight processing container, wherein one end is opened to face the susceptor and the other end generates plasma. A plasma processing apparatus, wherein an antenna member connected to a high-frequency power source for use in the processing container is arranged, and a plasma density increasing means for increasing a plasma density in the processing container is provided on a side wall portion of the processing container. 5. The plasma density increasing means comprises a coil portion wound around the processing container and an auxiliary high frequency power source connected to the coil portion. Plasma processing equipment. 6. The plasma according to claim 4, wherein the plasma density increasing means comprises a coil portion wound around the processing container and a DC power source connected to the coil portion. Processing equipment. 7. The plasma processing apparatus according to claim 4, wherein the plasma density increasing means comprises a permanent magnet arranged outside the processing container. 8. A plasma processing apparatus for performing plasma processing on an object to be processed placed on a susceptor in an airtight processing container, wherein an antenna member is arranged inside or outside the processing container so as to face the susceptor. Then, a high-frequency power source for plasma generation, which is connected to both ends of the antenna member during plasma processing, is provided, and one end of the antenna member and one end of the high-frequency power source are opened when cleaning the processing container. A plasma processing apparatus, wherein the plasma processing apparatus is configured to be provided. 9. A method of cleaning a plasma processing apparatus for performing plasma processing on an object to be processed placed on a susceptor in an airtight processing container, the method being provided inside or outside the processing container so as to face the susceptor. An antenna member is arranged, a high frequency voltage from a high frequency power source for plasma generation is applied to both ends of the antenna member during plasma processing, and the high frequency voltage is applied to one end of the antenna member during cleaning and the other end of the antenna member is also applied. The method for cleaning a plasma processing apparatus is characterized in that is an open end.