JPH07193358A - Manufacture of ceramic electronic circuit board - Google Patents
Manufacture of ceramic electronic circuit boardInfo
- Publication number
- JPH07193358A JPH07193358A JP35521192A JP35521192A JPH07193358A JP H07193358 A JPH07193358 A JP H07193358A JP 35521192 A JP35521192 A JP 35521192A JP 35521192 A JP35521192 A JP 35521192A JP H07193358 A JPH07193358 A JP H07193358A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- substrate
- ceramic
- board
- ceramics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 title claims abstract description 78
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 49
- 238000000034 method Methods 0.000 claims abstract description 42
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
- 239000002184 metal Substances 0.000 claims abstract description 31
- 238000001816 cooling Methods 0.000 claims abstract description 4
- 239000000758 substrate Substances 0.000 claims description 90
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 15
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 11
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 239000002131 composite material Substances 0.000 abstract description 42
- 238000010438 heat treatment Methods 0.000 abstract description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 6
- 238000005266 casting Methods 0.000 abstract description 6
- 229910002804 graphite Inorganic materials 0.000 abstract description 6
- 239000010439 graphite Substances 0.000 abstract description 6
- 239000002994 raw material Substances 0.000 abstract description 6
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract description 2
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000012299 nitrogen atmosphere Substances 0.000 abstract description 2
- 239000004411 aluminium Substances 0.000 abstract 3
- 238000007531 graphite casting Methods 0.000 abstract 2
- 238000005498 polishing Methods 0.000 abstract 1
- 238000005219 brazing Methods 0.000 description 38
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- 239000010949 copper Substances 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 230000007547 defect Effects 0.000 description 11
- 238000005304 joining Methods 0.000 description 11
- 238000002844 melting Methods 0.000 description 7
- 230000008018 melting Effects 0.000 description 7
- 239000012298 atmosphere Substances 0.000 description 6
- 239000000956 alloy Substances 0.000 description 4
- 229910045601 alloy Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000000843 powder Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 238000005275 alloying Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 239000000155 melt Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011225 non-oxide ceramic Substances 0.000 description 2
- 229910052575 non-oxide ceramic Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910017945 Cu—Ti Inorganic materials 0.000 description 1
- 241000238631 Hexapoda Species 0.000 description 1
- 229910008332 Si-Ti Inorganic materials 0.000 description 1
- 229910006749 Si—Ti Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000009749 continuous casting Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004512 die casting Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007719 peel strength test Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は金属とセラミックスとの
接合体の製造方法に関するものであり、特にパワーモジ
ュールのような大電力電子装置の実装に好適なアルミニ
ウムーセラミックス複合電子回路基板の製造方法に関す
るものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a bonded body of metal and ceramics, and particularly to a method for manufacturing an aluminum-ceramic composite electronic circuit board suitable for mounting a high power electronic device such as a power module. It is about.
【0002】[0002]
【従来の技術】パワーモジュールのような大電力装置の
実装基板としてはセラミックス基板の表面に金属を接合
して作製した金属−セラミックス複合電子回路基板が使
用され、特に電気及び熱伝導性の優れた銅とアルミナあ
るいは窒化アルミニウムセラミックスとの複合基板が現
在主に使われている。2. Description of the Related Art A metal-ceramic composite electronic circuit board produced by bonding a metal to a surface of a ceramic substrate is used as a mounting substrate for a high power device such as a power module, and is particularly excellent in electrical and thermal conductivity. Composite substrates of copper and alumina or aluminum nitride ceramics are currently mainly used.
【0003】銅とセラミックスとの接合方法として、直
接接合法とろう接法がある。前者は酸化物セラミックス
と銅との接合のために開発された技術で、接合するとき
に酸素を含有する銅板を使って、不活性雰囲気中で加熱
するか、あるいは無酸素銅を使用して酸化性雰囲気中で
加熱することにより、銅とセラミックスを接合させる方
法である。この方法で非酸化物セラミックスと銅を接合
させる場合、予め非酸化物セラミックスの表面に酸化物
層を形成しなければならない。例えば特開昭59-3077 号
に開示されているように、予め空気中において、約1000
℃の温度で窒化アルミニウム基板を処理し、表面に酸化
物を生成させてから、上述の方法で銅と窒化アルミニウ
ムを接合させる。ろう接法は銅とセラミックスとの間に
活性金属のろう材を介して接合する方法であり、この方
法では一般にAg−Cu−Ti系ろう材が使用されてい
る。As a method of joining copper and ceramics, there are a direct joining method and a brazing method. The former is a technology developed for joining oxide ceramics and copper.When joining, a copper plate containing oxygen is used to heat in an inert atmosphere or to oxidize using oxygen-free copper. It is a method of joining copper and ceramics by heating in a neutral atmosphere. When joining non-oxide ceramics and copper by this method, it is necessary to previously form an oxide layer on the surface of the non-oxide ceramics. For example, as disclosed in JP-A-59-3077, about 1000
The aluminum nitride substrate is treated at a temperature of ° C to form an oxide on the surface and then the copper and aluminum nitride are bonded by the method described above. The brazing method is a method of joining copper and ceramics through a brazing material of an active metal, and in this method, an Ag-Cu-Ti based brazing material is generally used.
【0004】銅−セラミックス複合基板は広く使用され
るにもかかわらず、生産中及び実用上幾つかの問題点が
ある。その中で最も重大な問題点は電子部品の実装及び
使用中にセラミックス基板の内部にクラックが生じるこ
とにより発生する基板の表裏間の絶縁破壊である。Although the copper-ceramic composite substrate is widely used, it has some problems during production and practical use. The most serious problem among them is the dielectric breakdown between the front and back surfaces of the substrate, which is caused by cracks inside the ceramic substrate during mounting and use of electronic components.
【0005】セラミックス基板と銅を接合させる為に、
セラミックス基板と銅が1000℃近くまで加熱され、ま
た、パワーモジュール等の電子部品を実装するときに、
銅−セラミックス複合基板は400 ℃近くまで加熱され
る。セラミックスより銅の熱膨張係数は約一桁大きいた
め、室温まで複合基板を冷却するときに、熱膨張係数の
違いにより、基板の内部で大きな熱応力が発生する。さ
らに電子部品の使用環境、及び使用中の発熱により、基
板の温度が常に変化し、これに対応して基板に作用する
熱応力も変化する。これらの熱応力の作用によって、セ
ラミックス基板にクラックが生じる。そのために、セラ
ミックス電子回路基板の重要な評価項目の一つである耐
ヒートサイクル特性、つまり−40℃から125 ℃までの温
度範囲で基板の加熱と冷却とを繰り返した場合に、基板
にクラックが発生するまでの繰り返し回数によって評価
される特性値は、直接接合法で作製した銅−アルミナ複
合基板については20回であるが、ろう接法で作製した同
基板のこの特性値は10回以下である。In order to bond a ceramic substrate and copper,
When the ceramics substrate and copper are heated to nearly 1000 ° C, and when mounting electronic components such as power modules,
The copper-ceramic composite substrate is heated to near 400 ° C. Since the coefficient of thermal expansion of copper is about an order of magnitude higher than that of ceramics, when the composite substrate is cooled to room temperature, a large thermal stress is generated inside the substrate due to the difference in coefficient of thermal expansion. Furthermore, the temperature of the substrate constantly changes due to the environment in which the electronic component is used and the heat generated during use, and the thermal stress acting on the substrate also changes accordingly. The effect of these thermal stresses causes cracks in the ceramic substrate. Therefore, heat cycle resistance, which is one of the important evaluation items for ceramics electronic circuit boards, that is, cracks are generated on the board when the board is heated and cooled repeatedly in the temperature range of -40 ° C to 125 ° C. The characteristic value evaluated by the number of repetitions until occurrence is 20 times for the copper-alumina composite substrate manufactured by the direct bonding method, but this characteristic value of the same substrate manufactured by the brazing method is 10 times or less. is there.
【0006】銅と同じような優れた電気と熱伝導性を有
するアルミニウムを導電回路材料として使う構想は以前
からあった(例えば特開昭59-121890 号にこのような構
想が記述されている)。アルミニウムは銅より軟らか
い。その降伏強度は銅の約1/4である。したがって、
アルミニウムを回路材料として使えば、複合基板の内部
に発生した残留応力を大幅に緩和できることが予測でき
る。しかし、上記の特開昭59-121890 号の発明ではアル
ミニウムとセラミックスとの具体的な接合方法は開示さ
れていなかった。特開平3-125463号、特開平4-12554 号
及び特開平4-18746 はろう接法でアルミニウム−セラミ
ックス複合基板を作製する方法を開示している。これら
の文献によると、作製したアルミニウム−セラミックス
基板の耐ヒートサイクル特性は200 回以上で、銅−セラ
ミックス基板の約10培である。There has been a concept of using aluminum, which has excellent electric and thermal conductivity similar to copper, as a conductive circuit material (for example, such a concept is described in JP-A-59-121890). . Aluminum is softer than copper. Its yield strength is about 1/4 that of copper. Therefore,
If aluminum is used as a circuit material, it can be expected that the residual stress generated inside the composite substrate can be relieved significantly. However, the above-mentioned Japanese Patent Laid-Open No. 59-121890 does not disclose a specific method for joining aluminum and ceramics. Japanese Unexamined Patent Publication Nos. 3125463, 4-12554 and 4-18746 disclose methods for producing an aluminum-ceramic composite substrate by a brazing method. According to these documents, the heat cycle resistance of the manufactured aluminum-ceramic substrate is 200 times or more, which is about 10 times that of the copper-ceramic substrate.
【0007】しかし、上述の公報に開示されているよう
なろう接法でアルミニウム−セラミックス複合基板を製
造するとき、またこのように作成した基板を使用すると
きに次の問題点がある。However, there are the following problems when an aluminum-ceramic composite substrate is manufactured by the brazing method as disclosed in the above publication and when the substrate thus prepared is used.
【0008】1)アルミニウムは酸化しやすいため、上
述の公報に開示された方法は真空または高純度不活性ガ
ス雰囲気中において行われなければならない。1) Since aluminum is easily oxidized, the method disclosed in the above-mentioned publication must be carried out in vacuum or in a high-purity inert gas atmosphere.
【0009】2)アルミニウムの融点は660 ℃と低く、
ろう接温度をこれに近付けると、アルミニウムは全部溶
けて、形状が崩れてしまうか、局部的に溶けて、虫喰い
と呼ばれるろう接欠陥が起こる。一方、ろう接温度を低
くすると、ろう材とセラミックスとの反応が起こりにく
いため、接合体の強度は弱い。本発明の実施例に示すよ
うに、Al−Si系のろう合金を使用する場合、ろう接
は590 ℃以上、640 ℃以下の温度範囲よりさらに狭い温
度範囲内で行わなければならない。発明者の経験による
と、大量生産の場合、特に真空において複合基板を製造
するときには(発熱体からの熱は輻射と伝導だけによっ
て伝達され、対流がないので)、炉内の温度を均一にコ
ントロールすることは非常に困難である。2) The melting point of aluminum is as low as 660 ° C,
When the brazing temperature is brought close to this, all of the aluminum melts and the shape collapses, or the aluminum locally melts, causing a brazing defect called bug eating. On the other hand, when the brazing temperature is lowered, the reaction between the brazing material and the ceramics is less likely to occur, so that the strength of the joined body is weak. As shown in the examples of the present invention, when an Al-Si based brazing alloy is used, the brazing should be performed within a temperature range narrower than the temperature range of 590 ° C to 640 ° C. According to the experience of the inventor, in the case of mass production, especially when manufacturing a composite substrate in a vacuum (the heat from the heating element is transferred only by radiation and conduction, and there is no convection), the temperature in the furnace is uniformly controlled. Very difficult to do.
【0010】3)ろう接法で複合基板を作製する場合
は、ろう接温度がアルミニウムの融点660 ℃以下でなけ
ればならない。しかしながら、このような温度では、ア
ルミニウム系ろう材とセラミックスとの濡れ性がよくな
い。従って、この方法で複合基板を製造するときには、
未接欠陥が発生しやすい。3) When a composite substrate is manufactured by the brazing method, the brazing temperature must be 660 ° C. or lower of the melting point of aluminum. However, at such a temperature, the wettability between the aluminum brazing material and the ceramic is not good. Therefore, when manufacturing a composite substrate by this method,
Non-contact defects are likely to occur.
【0011】4)アルミナ基板なら直接ろう接できる
が、窒化アルミニウムセラミックス基板の場合、銅を直
接接合する場合と同じように、予め窒化アルミニウム基
板の表面を酸化処理しなければならない。この方法では
工程が複雑になるだけではなく、窒化アルミニム基板は
本来高熱伝導の要求に対応する為に開発されたものであ
るのに、表面に酸化物が形成されると、熱伝導特性に悪
影響を与えることは言うまでもない。4) Although an alumina substrate can be directly brazed, in the case of an aluminum nitride ceramic substrate, the surface of the aluminum nitride substrate must be previously oxidized as in the case of directly joining copper. This method not only complicates the process, but since the aluminum nitride substrate was originally developed to meet the requirement for high thermal conductivity, the formation of oxide on the surface adversely affects the thermal conductivity. Needless to say to give.
【0012】5)銅−セラミックス複合基板の場合と同
様に、ろう接法で作製した基板の耐ヒートサイクル特性
は直接接合法で作製したものより低いと考えられる。こ
れは基板の作製に使用するろう合金は純金属より硬く、
塑性変形が起こりにくいので、応力の緩和に不利な影響
を与える為である。5) As in the case of the copper-ceramics composite substrate, the heat cycle resistance of the substrate produced by the brazing method is considered to be lower than that produced by the direct joining method. This is because the braze alloy used to make the substrate is harder than pure metal,
This is because plastic deformation is unlikely to occur, which adversely affects stress relaxation.
【0013】[0013]
【発明が解決しようとする課題】上述したように、ろう
接法でアルミニウム−セラミックス複合基板を作製する
工程に於いては、安定性などの問題点があり、また、セ
ラミックス基板が非酸化物系のものである場合、製造工
程が複雑になるという問題点がある。さらに、このよう
に作製した複合基板は接合強度及び耐熱特性等の面にお
いて必ずしも最適ではないと考えられる。As described above, in the process of producing an aluminum-ceramic composite substrate by the brazing method, there are problems such as stability, and the ceramic substrate is a non-oxide type. However, the manufacturing process is complicated. Further, it is considered that the composite substrate manufactured in this way is not necessarily optimum in terms of bonding strength and heat resistance.
【0014】本発明はこのような問題点を克服し、より
良い接合強度、熱伝導性、及び耐熱特性を有するアルミ
ニウム−セラミックス複合基板を製造するための、安定
且つ便利な製造方法を提供することを目的とする。The present invention overcomes these problems and provides a stable and convenient manufacturing method for manufacturing an aluminum-ceramic composite substrate having better bonding strength, thermal conductivity, and heat resistance. With the goal.
【0015】[0015]
【課題を解決するための手段】本発明者等はかかる課題
を解決するために鋭意研究した結果、アルミニウム−セ
ラミックス複合基板を製造するための斬新な製造方法を
見いだし、本発明を提供することができた。Means for Solving the Problems As a result of intensive studies for solving the above problems, the present inventors have found a novel manufacturing method for manufacturing an aluminum-ceramic composite substrate, and can provide the present invention. did it.
【0016】すなわち本発明は、(1)セラミックス基
板の少なくとも片面に金属導電回路を有するセラミック
ス電子回路基板の製造において、(ア)上記導電回路形
成用の金属をあらかじめ溶解してから、鋳型に鋳込む
か、もしくは鋳型において上記金属を溶解すること、
イ)上記鋳型の所定の場所に予めセラミックス基板を配
置しておくか、もしくは上記溶融金属の中へセラミック
ス基板を差し込むかすることによって、セラミックス基
板を上記溶融金属と直接接触させること、(ウ)上記セ
ラミックス基板と上記溶融金属を接触させた状態で保持
した後冷却し、金属とセラミックス基板を直接接合させ
ることを特徴とするセラミックス電子回路基板の製造方
法;(2)上記金属がアルミニウムまたはその合金であ
り、上記セラミックス基板がアルミナ、窒化アルミニウ
ムまたはその他の電子装置の実装に好適なセラミックス
基板である上記の製造方法;に関するものである。That is, according to the present invention, (1) in the production of a ceramic electronic circuit board having a metal conductive circuit on at least one surface of the ceramic substrate, (a) the metal for forming the conductive circuit is melted in advance and then cast into a mold. Melting or melting the metal in a mold,
(A) Directly contacting the ceramic substrate with the molten metal by previously disposing the ceramic substrate at a predetermined place in the mold or by inserting the ceramic substrate into the molten metal; A method for manufacturing a ceramics electronic circuit board, characterized in that the ceramics substrate and the molten metal are held in contact with each other and then cooled to directly bond the metal and the ceramics substrate; (2) The metal is aluminum or an alloy thereof. And the above-mentioned manufacturing method, wherein the ceramic substrate is a ceramic substrate suitable for mounting alumina, aluminum nitride, or other electronic devices.
【0017】[0017]
【作用】発明者等の以前の研究によれば、大気中におい
て加熱すると、アルミニウムの表面に厚い酸化物(アル
ミナ)の層が形成されるので、アルミニウムとセラミッ
クスとの接合はできない。真空及び不活性雰囲気中にお
いては、アルミニウムとセラミックスとを接合できる
が、接合界面部分に薄い酸化物の層が検出され、アルミ
ニウムとセラミックスはアルミニウム表面の薄い酸化膜
を介して接合していることがわかる。アルミナに覆われ
ているアルミニウムはセラミックスに対して濡れ性が良
くないため、このように作製した接合体の界面部分には
未接部が形成され易く、接合強度がばらついていた。According to the previous research conducted by the inventors, when heated in the atmosphere, a thick oxide (alumina) layer is formed on the surface of aluminum, so that aluminum and ceramics cannot be joined. Although aluminum and ceramics can be bonded in a vacuum and in an inert atmosphere, a thin oxide layer is detected at the bonding interface, and aluminum and ceramics are bonded through a thin oxide film on the aluminum surface. Recognize. Since aluminum covered with alumina does not have good wettability with respect to ceramics, a non-contact portion is easily formed in the interface portion of the joined body thus produced, and the joining strength varies.
【0018】このような酸化膜による悪影響を抑えるた
めに、発明者らは以前からアルミニウムに合金元素S
i、Ti等を添加し、その効果について調べた。Siに
は表面の酸化膜を薄くする効果があり、Tiは界面での
反応を促進する役割をする。またSiとTiを同時に添
加する場合、接合体の強度及び安定性の改善に最も有効
であることが確認された。しかし、いずれの場合も、接
合体の界面部分から酸化物が検出され、アルミニウムと
セラミックスは依然として、酸化膜を介して接合してい
ることが分った。In order to suppress the adverse effect of such an oxide film, the present inventors have long used aluminum as an alloying element S.
i, Ti, etc. were added and the effect was investigated. Si has the effect of thinning the oxide film on the surface, and Ti plays the role of promoting the reaction at the interface. It was also confirmed that the simultaneous addition of Si and Ti is most effective in improving the strength and stability of the joined body. However, in each case, oxide was detected from the interface part of the bonded body, and it was found that aluminum and ceramics were still bonded via the oxide film.
【0019】アルミニウム表面の酸化物アルミナは化学
的に非常に安定で、他の物質と反応しにくい。従って、
これが界面に存在すると、アルミニウムとセラミックス
基板との接合を妨げることが考えられる。Oxide alumina on the surface of aluminum is chemically very stable and does not easily react with other substances. Therefore,
If this is present at the interface, it is considered that the bonding between aluminum and the ceramic substrate is hindered.
【0020】発明者等が以前行ったアルミニウムとセラ
ミックス粉末との焼結体に関する研究では、アルミニウ
ムとセラミックス粉末の間に酸化膜が介在せず、直接接
合している部分があり、またその間にアルミニウムとセ
ラミックスとの反応生成物が形成されていることが判明
した。これは粉末を混合、加圧成形する際にアルミニウ
ム粉末表面の酸化膜が破られ、アルミニウムとセラミッ
クス粉末とが直接接触している状態で加熱されたためで
あると考えられる。この事はアルミニウムとセラミック
スとの直接接合の可能性を示唆している。In a previous study conducted by the inventors of the present invention on a sintered body of aluminum and ceramic powder, there is a portion where aluminum oxide and ceramic powder are directly joined without an oxide film interposed, and aluminum is also interposed between them. It was found that a reaction product of the and the ceramics was formed. It is considered that this is because the oxide film on the surface of the aluminum powder was broken when the powder was mixed and pressure-molded, and the aluminum and the ceramic powder were heated while being in direct contact with each other. This suggests the possibility of direct bonding between aluminum and ceramics.
【0021】本発明者らはアルミニウム表面の酸化膜を
除去し、良質な金属−セラミックス複合基板を作製する
ためにいろいろ試みたが、以下の手段が有効であること
がわかった。The present inventors have made various attempts to remove the oxide film on the aluminum surface and produce a good quality metal-ceramic composite substrate, but it has been found that the following means is effective.
【0022】1)金属を溶解し、金属溶湯表面の酸化膜
を破るために金属溶湯とセラミックス基板の間に相対運
動を起こさせた。もっと具体的に言うと、鋳型の所定の
場所に予めセラミックス基板を設置してから溶湯を鋳込
むか、鋳込んだ溶融金属の中へセラミック基板を差し込
むかすることによって、セラミックス基板を溶融金属と
の間に相対運動を起こさせる。1) A relative motion was caused between the molten metal and the ceramic substrate in order to dissolve the metal and break the oxide film on the surface of the molten metal. More specifically, by placing a ceramics substrate at a predetermined location of the mold in advance and then casting the molten metal, or by inserting the ceramics substrate into the cast molten metal, Cause a relative movement between.
【0023】2)温度が高くなると、金属表面の酸化膜
が分解しやすい為、溶湯の温度を高くすることが好まし
い。しかし、溶湯を高温に加熱するには余分のエネルギ
ーが必要であると同時に溶湯の蒸発及び溶湯と鋳型との
反応が激しくなる等好ましくないことが起こるので、適
切な溶湯温度は700 ℃以上、1000℃以下の範囲であり、
この温度範囲では健全な複合基板が作製できる。2) Since the oxide film on the metal surface is easily decomposed when the temperature rises, it is preferable to raise the temperature of the molten metal. However, heating the molten metal to a high temperature requires extra energy, and at the same time, unfavorable conditions such as the evaporation of the molten metal and the reaction between the molten metal and the mold become violent. Is below ℃,
A sound composite substrate can be produced in this temperature range.
【0024】3)溶湯表面の酸化をできるだけ抑えるた
めに、溶湯の鋳込み及び基板の差し込みはできるだけ迅
速に行う。また製造は大気中において行ってもかまわな
いが、酸化防止のために溶解及び鋳込みは真空または不
活性雰囲気中において行うことが好ましい。3) In order to suppress the oxidation of the molten metal surface as much as possible, the molten metal is cast and the substrate is inserted as quickly as possible. The production may be carried out in the air, but it is preferable to carry out the melting and casting in a vacuum or an inert atmosphere in order to prevent oxidation.
【0025】なお、電子回路のパターンの形成方法につ
いては、予め鋳型に回路パターンの模様を形成し、直接
回路パターンを形成するか、べたのアルミニウム層を形
成した後、エッチング法で回路パターンを形成する方法
がある。Regarding the method of forming the pattern of the electronic circuit, the pattern of the circuit pattern is formed in advance on the mold and the circuit pattern is directly formed, or after the solid aluminum layer is formed, the circuit pattern is formed by the etching method. There is a way to do it.
【0026】[0026]
【実施例1】図1に示すように黒鉛鋳型1の中に厚さ0.
635mm のアルミナ(セラミックス)基板2とアルミニウ
ム原料3および黒鉛ピストン4を設置し、これをそれぞ
れ700 ℃(実験1)、800 ℃(実験2)、900 ℃(実験
3)、1000℃(実験4)に加熱した炉の中に入れた。ア
ルミニウム原料が溶けて、ピストンの重量で、アルミナ
基板を設置した部分に入り込んだ後、鋳型を加熱炉から
取り出し、室温まで冷却した。なお、本実施例において
は、黒鉛鋳型の酸化を防ぐために、加熱および冷却を窒
素雰囲気中で行った。このように作製した片面で0.5mm
厚さのアルミニウム層を有する複合基板を機械および電
解研磨し、光学顕微鏡でアルミニウムの組織を観察し、
またこの複合基板から幅4mm のピール強度測定用試料を
切り出し、90°ピール強度試験を行った。Example 1 As shown in FIG. 1, a graphite mold 1 has a thickness of 0.
A 635 mm alumina (ceramics) substrate 2, an aluminum raw material 3 and a graphite piston 4 are installed, and these are 700 ℃ (experiment 1), 800 ℃ (experiment 2), 900 ℃ (experiment 3), 1000 ℃ (experiment 4), respectively. It was placed in a furnace that was heated to room temperature. After the aluminum raw material melted and entered the portion where the alumina substrate was installed by the weight of the piston, the mold was taken out of the heating furnace and cooled to room temperature. In this example, heating and cooling were performed in a nitrogen atmosphere in order to prevent oxidation of the graphite template. 0.5mm on one side made in this way
Mechanically and electropolishing a composite substrate with a thick aluminum layer, observing the structure of the aluminum with an optical microscope,
A 4 mm wide sample for peel strength measurement was cut out from this composite substrate and a 90 ° peel strength test was conducted.
【0027】いずれの温度において作製した複合基板
も、そのアルミウム部分の組織は非常に緻密で、気孔、
巣等鋳物によくある欠陥は一切なかった。また表1に示
すように、複合基板の強度は35kg/cm 以上で、かつ破壊
は界面ではなく、アルミニウム中で起こったので、アル
ミニウムがアルミナ基板に強固に接合していることがわ
かった。更に、未接欠陥については、700 ℃で作製した
サンプルの中に多少有るが、800 ℃以上の温度で作製し
たサンプルには一切なかった。The composite substrate produced at any temperature has a very dense structure of the aluminum part,
There were no defects commonly found in castings such as cavities. Further, as shown in Table 1, since the strength of the composite substrate was 35 kg / cm or more, and the fracture occurred not in the interface but in the aluminum, it was found that the aluminum was firmly bonded to the alumina substrate. Furthermore, some non-contact defects were found in the samples prepared at 700 ° C, but were not found in the samples prepared at 800 ° C or higher.
【0028】なお、これらの実施例ではアルミナ基板を
用いて複合基板を作製したが、発明者の一人は別の発明
において、同じ方法で窒化アルミニウム複合基板が作製
できることを確認した。In these examples, the alumina substrate was used to manufacture the composite substrate, but one inventor confirmed in another invention that the aluminum nitride composite substrate could be manufactured by the same method.
【0029】[0029]
【表1】 本明細書に記述した内容から、上述の実施例に示す方法
が唯一の方法ではなく、また本実施例に示すような条件
に限定されるべきではないことが容易に理解されよう。
高圧鋳造、ダイカスト、連続鋳造等各種の方法で複合基
板を製造することが可能であり、製造温度での保持時間
を長くし、アルミニウムの中に表面酸化物の分解および
活性化に役立つ合金元素、または融点を低下させる合金
元素例えばSi、Ge、Ti、Mg等を添加し、セラミ
ックス基板中の焼結助剤をアルミニウムと反応しやすい
組成にし、またその量を増えさせるような措置をとれ
ば、もっと低い温度で複合基板が作製できることが容易
に考えられる。[Table 1] From the contents described in the present specification, it will be easily understood that the method shown in the above-mentioned embodiment is not the only method and should not be limited to the conditions shown in this embodiment.
High pressure casting, die casting, it is possible to produce a composite substrate by various methods such as continuous casting, the holding time at the production temperature is lengthened, an alloying element useful in the decomposition and activation of surface oxides in aluminum, Alternatively, if alloying elements that lower the melting point, such as Si, Ge, Ti, and Mg, are added to make the sintering aid in the ceramic substrate a composition that easily reacts with aluminum, and measures are taken to increase the amount, It is easily conceivable that the composite substrate can be produced at a lower temperature.
【0030】[0030]
【比較例1〜6】比較のためにろう接法でアルミニウム
−セラミックス複合基板を作製した。[Comparative Examples 1 to 6] For comparison, an aluminum-ceramic composite substrate was produced by a brazing method.
【0031】2枚の厚さ0.5mm のアルミニウム板がろう
材を介して上下から厚さ0.635mm のセラミックス基板を
はさむように、アルミニウム板とセラミックス基板をセ
ットした。この上に更に重りを乗せて、10-5の真空にお
いて、650 ℃、20分間保持し、アルミニウム板とセラミ
ックス基板をろう接した。使ったセラミックス基板はア
ルミナと窒化アルミニウム基板の2種類であり、ろう材
は厚さ0.2mm の3種類のAl−Si−Ti合金箔であっ
た。その組成は表2に示されている。複合基板の評価は
実施例に示した方法と同じ方法で行った。The aluminum plate and the ceramic substrate were set so that the two aluminum plates having a thickness of 0.5 mm sandwich the ceramic substrate having a thickness of 0.635 mm from above and below via the brazing material. A weight was further placed on this, and it was held in a vacuum of 10 −5 at 650 ° C. for 20 minutes to braze the aluminum plate and the ceramic substrate. The ceramics substrates used were two types, alumina and aluminum nitride substrates, and the brazing material was three types of Al-Si-Ti alloy foil with a thickness of 0.2 mm. Its composition is shown in Table 2. The evaluation of the composite substrate was performed by the same method as shown in the examples.
【0032】[0032]
【表2】 表1に複合基板の評価結果を合わせて示している。HS
ろう材でろう接した複合基板はアルミニウム板自身が溶
けてしまい、形状が崩れてしまった。MSとLSろう材
でろう接した複合基板はアルミニウム板が全部は溶けな
かったが、かなりの部分が溶けてしまい、虫喰いろう接
欠陥が発生した。これらの試料のピール強度は30kg/cm
以下で、特に窒化アルミニウム基板の場合ろう接強度が
2.5kg/cm以下であり、基板として要求されるピール強度
5kg/cmより低かった。またこれらの複合基板には未接部
分の面積がほぼ10% 以上あった。[Table 2] Table 1 also shows the evaluation results of the composite substrate. HS
In the composite substrate brazed with the brazing material, the aluminum plate itself melted and the shape collapsed. In the composite substrate brazed with the MS and LS brazing material, the aluminum plate was not entirely melted, but a considerable part was melted, and a worm-eating soldering defect was generated. The peel strength of these samples is 30 kg / cm
Below, especially in the case of aluminum nitride substrate, the brazing strength is
2.5 kg / cm or less, peel strength required as a substrate
It was lower than 5 kg / cm. In addition, the area of the non-contact portion of these composite substrates was approximately 10% or more.
【0033】[0033]
【比較例7〜8】アルミニウム板の溶解を防ぐために、
ろう接温度を10℃下げて、640 ℃にし、LSとMSろう
材を用いて、アルミニウム−アルミナ複合基板の作製を
試みた。しかし、表1に示すように、この温度ではLS
ろう材によるろう接はできなかった。MSろう材による
ろう接はできたが、ろう接強度は650 ℃でろう接したも
のより低くなり、また上述したような虫喰い、未接欠陥
が相変わらず発生した。温度をさらに低くすれば虫喰い
欠陥をなくせる可能性が有るが、未接欠陥がもっと多く
なる可能性が有る。[Comparative Examples 7 to 8] In order to prevent dissolution of the aluminum plate,
The brazing temperature was lowered by 10 ° C. to 640 ° C., and an aluminum-alumina composite substrate was tried to be produced by using LS and MS brazing material. However, as shown in Table 1, at this temperature LS
Brazing with brazing material was not possible. Although brazing with the MS brazing material was possible, the brazing strength was lower than that at brazing at 650 ° C, and the above-mentioned insect biting and non-contact defects still occurred. Lowering the temperature may eliminate bug-eating defects, but there may be more non-contact defects.
【0034】[0034]
【比較例9〜10】ろう接温度をHSろう材の溶融温度
(約580 ℃)まで下げて、アルミニウム−アルミナ複合
基板の作製を試みた。しかし、このような低い温度では
セラミックス基板とろう材は接合しなかった。また590
℃でろう接した場合、アルミニウム板が一部溶けて、虫
喰い欠陥が生じた。これ以上温度を高めることはできな
いことがわかった。Comparative Examples 9 to 10 An attempt was made to produce an aluminum-alumina composite substrate by lowering the brazing temperature to the melting temperature of the HS brazing material (about 580 ° C). However, at such a low temperature, the ceramic substrate and the brazing material were not joined. Again 590
In the case of brazing at ℃, a part of the aluminum plate was melted to cause a bug-eating defect. It was found that the temperature cannot be raised any higher.
【0035】以上の比較例からわかるようにろう接法で
作製したアルミニウム−セラミックス複合基板は本発明
の直接接合法で作製したものより、接合強度が低く、ま
た未接欠陥が発生する確率が高い。As can be seen from the above comparative examples, the aluminum-ceramic composite substrate manufactured by the brazing method has a lower bonding strength and a higher probability of non-contact defects than those manufactured by the direct bonding method of the present invention. .
【0036】[0036]
【発明の効果】本明細書に開示したような本発明の方法
によれば、従来のろう接法で作製する場合の未接等のろ
う接欠陥をなくし、アルミニウムとセラミックス基板と
の高信頼性、高強度接合が実現できる。これによって、
耐ヒートサイクル特性が優れた良質なアルミニウム−セ
ラミックス複合基板が製造できる。According to the method of the present invention as disclosed in the present specification, a soldering defect such as non-contact in the case of manufacturing by the conventional brazing method is eliminated, and high reliability of aluminum and a ceramic substrate is obtained. High strength bonding can be realized. by this,
A good quality aluminum-ceramics composite substrate with excellent heat cycle resistance can be manufactured.
【図1】図1は本発明の実施例においてアルミニウム−
セラミックス複合基板を作製するときの鋳型の断面図で
ある。FIG. 1 is a schematic diagram of an aluminum-based structure according to an embodiment of the present invention
It is a sectional view of a mold at the time of producing a ceramics composite substrate.
1 黒鉛鋳型 2 セラミックス基板 3 アルミニウム原料 4 黒鉛ピストン 1 Graphite Template 2 Ceramics Substrate 3 Aluminum Raw Material 4 Graphite Piston
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/12 H05K 3/00 R ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification number Office reference number FI technical display location H01L 23/12 H05K 3/00 R
Claims (2)
属導電回路を有するセラミックス電子回路基板の製造に
おいて、上記導電回路形成用の金属を溶解した後、セラ
ミックス基板を上記溶融金属と直接接触させた状態で保
持して冷却することによって金属とセラミックス基板と
を直接接合させることを特徴とするセラミックス回路基
板の製造方法。1. In the production of a ceramic electronic circuit board having a metal conductive circuit on at least one surface of a ceramic substrate, the metal for forming the conductive circuit is melted, and then the ceramic substrate is held in direct contact with the molten metal. A method for manufacturing a ceramics circuit board, characterized in that the metal and the ceramics board are directly joined by cooling with cooling.
ウム合金であり、上記セラミックス基板がアルミナ、窒
化アルミニウムから選ばれる1種であることを特徴とす
る請求項1記載のセラミックス電子回路基板の製造方
法。2. The method for manufacturing a ceramic electronic circuit board according to claim 1, wherein the metal is aluminum or an aluminum alloy, and the ceramic substrate is one selected from alumina and aluminum nitride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4355211A JP2642574B2 (en) | 1992-12-17 | 1992-12-17 | Manufacturing method of ceramic electronic circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4355211A JP2642574B2 (en) | 1992-12-17 | 1992-12-17 | Manufacturing method of ceramic electronic circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH07193358A true JPH07193358A (en) | 1995-07-28 |
| JP2642574B2 JP2642574B2 (en) | 1997-08-20 |
Family
ID=18442601
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4355211A Expired - Lifetime JP2642574B2 (en) | 1992-12-17 | 1992-12-17 | Manufacturing method of ceramic electronic circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2642574B2 (en) |
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| US5965193A (en) * | 1994-04-11 | 1999-10-12 | Dowa Mining Co., Ltd. | Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material |
| JP2001267447A (en) * | 2000-03-14 | 2001-09-28 | Toshiba Corp | Ceramic circuit board and semiconductor device |
| JP2006028018A (en) * | 2005-08-01 | 2006-02-02 | Dowa Mining Co Ltd | Al-ceramic composite substrate |
| US7276292B2 (en) | 2001-03-01 | 2007-10-02 | Dowa Mining Co., Ltd. | Insulating substrate boards for semiconductor and power modules |
| JP2008283210A (en) * | 2008-07-14 | 2008-11-20 | Dowa Holdings Co Ltd | Manufacturing method of metal-ceramic circuit board |
| JP2009105456A (en) * | 2009-02-12 | 2009-05-14 | Toshiba Corp | Semiconductor device |
| JP2011199209A (en) * | 2010-03-24 | 2011-10-06 | Dowa Metaltech Kk | Method for manufacturing metal-ceramic bonded circuit board |
| JP2012211053A (en) * | 2011-03-31 | 2012-11-01 | Dowa Holdings Co Ltd | Method for manufacturing metal-ceramic jointed member |
| JP2016048789A (en) * | 2015-11-05 | 2016-04-07 | Dowaホールディングス株式会社 | Manufacturing method of aluminum-ceramic joined body |
| WO2018135499A1 (en) | 2017-01-17 | 2018-07-26 | 国立大学法人信州大学 | Method for manufacturing ceramic circuit board |
| WO2018155564A1 (en) | 2017-02-24 | 2018-08-30 | 国立研究開発法人物質・材料研究機構 | Method for manufacturing aluminum circuit board |
| JP2023026446A (en) * | 2019-02-22 | 2023-02-24 | Dowaメタルテック株式会社 | Metal-ceramic bonded substrate and manufacturing method thereof |
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| US5965193A (en) * | 1994-04-11 | 1999-10-12 | Dowa Mining Co., Ltd. | Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material |
| US6183875B1 (en) | 1994-04-11 | 2001-02-06 | Dowa Mining Co., Ltd. | Electronic circuit substrates fabricated from an aluminum ceramic composite material |
| JP2001267447A (en) * | 2000-03-14 | 2001-09-28 | Toshiba Corp | Ceramic circuit board and semiconductor device |
| US7276292B2 (en) | 2001-03-01 | 2007-10-02 | Dowa Mining Co., Ltd. | Insulating substrate boards for semiconductor and power modules |
| JP2006028018A (en) * | 2005-08-01 | 2006-02-02 | Dowa Mining Co Ltd | Al-ceramic composite substrate |
| JP2008283210A (en) * | 2008-07-14 | 2008-11-20 | Dowa Holdings Co Ltd | Manufacturing method of metal-ceramic circuit board |
| JP2009105456A (en) * | 2009-02-12 | 2009-05-14 | Toshiba Corp | Semiconductor device |
| JP2011199209A (en) * | 2010-03-24 | 2011-10-06 | Dowa Metaltech Kk | Method for manufacturing metal-ceramic bonded circuit board |
| JP2012211053A (en) * | 2011-03-31 | 2012-11-01 | Dowa Holdings Co Ltd | Method for manufacturing metal-ceramic jointed member |
| JP2016048789A (en) * | 2015-11-05 | 2016-04-07 | Dowaホールディングス株式会社 | Manufacturing method of aluminum-ceramic joined body |
| WO2018135499A1 (en) | 2017-01-17 | 2018-07-26 | 国立大学法人信州大学 | Method for manufacturing ceramic circuit board |
| WO2018155564A1 (en) | 2017-02-24 | 2018-08-30 | 国立研究開発法人物質・材料研究機構 | Method for manufacturing aluminum circuit board |
| US11570901B2 (en) | 2017-02-24 | 2023-01-31 | National Institute For Materials Science | Method for manufacturing aluminum circuit board |
| JP2023026446A (en) * | 2019-02-22 | 2023-02-24 | Dowaメタルテック株式会社 | Metal-ceramic bonded substrate and manufacturing method thereof |
Also Published As
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|---|---|
| JP2642574B2 (en) | 1997-08-20 |
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