JPH07169981A - Manufacturing method of circular glass blunted diode grains - Google Patents

Abstract

(57) [Summary] [Object] The present invention is intended to provide a method for producing round glass blunted diode crystal grains, which does not damage the surface layer of the crystal and further stabilizes the electrical characteristics. [Structure] The surface of the scattering chip is coated with a light blocking agent, a light cover is put on the P surface of the chip, and the chip is exposed to light with a photoconductor
After developing with a developing solution, etching is performed with an acid solution to form a groove tank.
After surely filling the etched grid layer of the groove tank with a glass solution, it is crystallized into glass at a high temperature in a quartz tube, nickel-plated, fed into a quartz tube, sintered and further nickel-plated. Leave the chip on the glass liner, cover the entire surface of the chip with white wax, and glue the rubber tape on which the small circular iron piece has been attached in advance. After cooling the chips, the rubber tape is stripped off and fed into a sand blower to form a large number of small round crystal grains on the glass liner. A glass liner and small round crystal grains are immersed in trichloroethane for cleaning and separation, and a circular iron piece is sucked out with a magnet.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for producing a round glass blunted diode crystal grain, and in particular, a diode is manufactured by dipping various chemical agents in a post assembly manufacturing process without damaging the crystal surface layer. The present invention relates to a method for producing a more stable diode grain having a circular shape, a pointless shape, and electrical characteristics, which can be completed and can reduce environmental pollution.

[0002]

2. Description of the Related Art Generally, a traditional diode grain manufacturing method is a chip whose electric circuit has been designed with a laser beam. The straight line crossing method is used to cut the grain into some square-shaped grains. Completed through repeated dipping using various chemical agents. Such a method of producing diode crystal grains has the following drawbacks.

(1) Since it is possible to complete the fabrication of the diode only after the cut-completed crystal grains have been repeatedly immersed in various chemical agents, the surrounding environment is easily formed there to form severe pollution. (2) Moreover, the crystal grains that have been cut can be completed only after repeated immersion of various chemical agents.
Therefore, the surface of the crystal grain after fabrication is easily scratched, and the defect rate of the appearance of the diode product is easily increased. (3) Since the crystal grains that have been cut are in the shape of blocks, there is a tendency for discharge action to occur at the tips of the four corners, making their electrical characteristics more unstable and requiring extremely high precision. Cannot be used for equipment.

[0004]

SUMMARY OF THE INVENTION In order to remedy the various drawbacks of producing the above-mentioned traditional diode grains, the inventor has taken his years of experience in this work as his main body, and has conducted extensive research and experimentation. After that, the present invention was finally developed and designed, and the purpose thereof is to dip various chemical agents in the subsequent assembly and manufacturing process, and to complete the production of the diode without damaging the crystal surface layer, and as well as environmental pollution. Another object of the present invention is to provide a method of manufacturing a more stable diode crystal grain which has a circular shape and is free of tips and has electrical characteristics.

[0005]

The method for producing circular glass blunted diode grains according to the present invention covers a light cover having a light blocking agent on the surface of a diffusion chip and a circular translucent zone at the upper end. Then, it is sent to the photoconductor to be exposed and exposed with a developer, then the unexposed part is etched up to the N part of the lower layer, the light blocking agent is removed with a solvent, and it is removed with deionized water and washed. Expose the grid layer. After that, after filling the tank groove after etching with a glass solution, it was put into a quartz tube to complete vitrification at high temperature, and then the surface of the chip was plated with a single nickel and electroplated. The chip is placed in the quartz tube again and sintered, and then nickel is plated once more.

In addition, a single layer of white wax glass liner is paved at the upper end and placed on an electric heating plate to melt the white wax, and then the chip with secondary nickel plating is left on the glass liner. , And white wax to cover the entire surface of the chip, and some small circular iron pieces on the rubber tape are brought into close contact with the end surface of the chip, which is not coated with the glass solution, and adhered. Moreover, the chips that have been mixed together are removed from the electric heating plate, transferred to a plate that is naturally cooled, and the rubber tape is peeled off after cooling. In addition, it is sent into the sand blower and the procedure of sand spraying is advanced, and the procedure of sand spraying is advanced to the coated surface where the small circular iron pieces are adhered to the chips, and when the sand spraying is completed, it slightly moves on the glass liner. For example, columnar crystal grains having a size of a small circular iron piece on the surface are formed. Further, the glass liner and the crystal grains are immersed in trichloroethane for washing, the glass liner and the crystal grains are separated, and the iron pieces are blown out with a magnet, that is, the production is completed.

[0007]

EXAMPLES In order to further understand and understand the features and effects of the present invention, the following is a detailed description of the examples according to the present invention, in which each drawing is combined with a manufacturing procedure block diagram. To explain.

Referring to FIG. 1, there is shown a block diagram of a manufacturing procedure in which a crystal grain is coated with a circular glass in a method for producing a circular glass blunting diode crystal grain according to an embodiment of the present invention.

Flow chart ○ Diffusion of light blocking agent covering the chip-OP10 ↓ (DIFFUSED WAFER PHOTORESISTER COATING) ○ Photosensitization and visualization-OP20 ↓ (PHOTO EXPOSURE & PATTERN) ○ Etching groove tank-OP30 ↓ (GROVING ETCH) ○ Blocking Light agent removal-OP40 ↓ (PHOTORESISTER REMOVING) ○ Grid layer cleaning-OP50 ↓ (JUNCTION CLEAN) ○ Grid layer coating with glass powder-OP60 ↓ (GLASS SLURRY APPLICATION) ○ High temperature vitrification-OP70 ↓ (GLASS FIRING) ○ Nickel plating And Sintering-OP80 ↓ (NICKEL PLATING & SINTERING) ○ Liner and solid iron piece orientation-OP90 ↓ (SUBSTRATE & IRON WAFER MOUNTING) ○ Sand and segregated sphere grains-OP100 (SAND BLAST & DEMOUNTING)

First, in the present invention, the "single light blocking agent coated on the surface of the chip" OP10 covers the light cover of the tentative design, and it is sent to "OP20, which is exposed by a photoconductor and projected by a developer" OP20. After that, the "etching groove tank" OP30 is formed with an acid solution, and the "blocking agent removal" OP40 is performed with a solvent, and then the "grid layer cleaning" OP50 is performed with (-) divergent water to reveal. . Then, after performing "filling the etching groove tank grid layer with glass solution" OP60,
After being discharged into a quartz tube, OP70 "crystallizes at high temperature to complete vitrification" is made, and then "single nickel plating is performed and placed in a quartz tube and sintered" OP80, and after sintering Further nickel plating is performed once.

Separately, a single white wax glass liner is laid on the upper end surface and placed on an electric heating plate, and the white wax is melted into a molten state. Leave on a glass liner that has been paved, cover the entire surface of the chip with white wax, and further "precisely adhere the tape with some small round iron pieces adhered to the chip to the chip" OP90 Make up. Then, remove the mixed chips from the electric heating plate, transfer them to a naturally cooled flat plate, cool them off, peel off the rubber tape, and send it into the sand blower to cover the small circular iron pieces of the chips. And proceed with the procedure of sand spraying, "After sand spraying is completed, dip it in trichloroethane and wash it,
In addition, if you blow out a circular iron piece with a magnet "OP100, that is, the production is completed.

In the manufacturing procedure of the present invention, the procedure of once diffusing the light blocking agent that covers the chip (for example, as shown in FIG. 2) O
At the time of P10, be sure to set the rotation speed of the drying box and prepare the light blocking agent 2 in advance, place the diffusion tip 1 after completion of the washing on the tip basket stand, and further throw it into the drying box. Take out after drying (up to 100 ° C for half an hour after baking). Then, the light blocking agent (P
There must be a clear symbol on the surface and the N surface.) 2 Further, the chip 1 coated with the light blocking agent 2 is placed in a drying box at about 75 ° C., dried for about half an hour, then taken out, and transferred to the next exposure and development procedure OP20.

Photosensing and imaging procedure (as shown in FIG. 3) OP
Reference numeral 20 covers a light cover (light cover = mask) 3 at the upper end of the chip 1 (P surface facing upward and N surface facing downward) which has already been coated with the light blocking agent 2 and dried. The light cover 3 is provided with a small solid translucent area 5 at the upper end, and the chip 1 is left on the glass piece 4, and the glass piece 4 located in the lower layer, the chip 1 in the middle layer and the light cover 3 in the upper layer are covered. It is sandwiched tightly and made flat, and after that, it is sent into the double-sided photoconductor, and the light blocking agent 2 on both sides of the chip 1 is applied to about 1 at the same time.
Take out after exposure for about 0 seconds. The chip 1 exposed at this time (a slight translucent area on the P-side is exposed) is placed back on the chip cage and then placed in a drying box for about half an hour to 100 ° C.
To dry. The dried chip 1 is taken out, and a projecting process is carried out by progressing the projecting process for 15 seconds with butyl acetate and auxiliary reagents (toluene and acetone), respectively, to perform the projecting operation. After that, the process is transferred to the next etching groove tank procedure OP30.

Etching groove tank procedure (as shown in FIG. 4) OP30
Place the preliminary mixed acid in the acid bath. The mixed acid was prepared by mixing 9 parts of nitric acid, 9 parts of glacial acetic acid, 14 parts of hydrofluoric acid and 4 parts of sulfuric acid, and the acid temperature was controlled to about 10 ° C. Remove the chip 1 that has already been exposed by leaving it on the car stand,
The chip 1 is left in an acid bath at a temperature of 0 ° C., the chip 1 is etched, and after about 5 minutes, the chip 1 is taken out and water is immediately flowed for 5 to 10 minutes (immersing in a fluid water tank). A groove tank 6 is formed on the upper end of the chip 1 after the immersion in the offshore water except the exposed portion of the circular light-transmitting area 5 of the light cover 3, and the etching depth is sampled to test the circular groove. When the depth of the bath 6 reaches 127 ± 25.4 μm (5 ± 1 mil), the chip 1 is not etched there and is transferred to the light blocking agent removal procedure.

The chip 1 which has completed the etching by removing the light blocking agent OP40, penetrates into the mixed solution of oxyflu and sulfuric acid to remove the light blocking agent coated on the surface of the chip 1, and the next grid cleaning procedure. Transfer to OP50.

The grid layer cleaning OP50 is the chip 1 taken out after the light blocking agent is removed by infiltrating it into the mixed solution.
(-) After moving into the deionized water to wash the mixed solution on the surface of the chip 1 offshore, the chip 1 was taken out and shaken at a high frequency of high frequency for about 5 minutes to remove water adhering to the surface of the chip 1, and then IPA. Dehydrate and shake with (isopropyl alcohol) for about 5 minutes. The chips 1 after dehydration are left on the heating plate for 10
Dry it at a temperature of 0 ° C. and transfer to the next glass powder grid layer coating procedure OP60.

Glass powder grid layer coating procedure (FIG. 5)
OP60 is a glass solution 7 prepared by adding an appropriate amount of (-) divergent water to a preliminarily prepared glass powder, adding 5% of an adhesive agent, and stirring the mixture sufficiently. After the washing and drying of 1 is completed, the glass solution 7 is filled into the fully etched circular groove tank 6 with a wiper piece made of soft plastic (pu), and the surface of the chip 1 is removed. Then, the chip 1 of the glass solution 7 which is kept clean and filled up is left on the chip cradle and transferred to the next high temperature vitrification procedure OP70.

In the high-temperature vitrification procedure OP70, first, the diffusion quartz tube is placed at a temperature of about 72 ° C., and a control pattern for automatically drying for a long time is set in advance. The quartz table to be burned is put into a quartz tube for sintering, and the automatic operation lever is hooked to start the electric button and nitrogen is passed through the quartz tube to cause the chip 1 to oxidize. To prevent it from affecting its electrical characteristics. Once the chip 1 has been sintered for about 1 hour, the glass solution 7 completes the high temperature vitrification, and after the completed high temperature glass or the subsequent chip 1 is taken out, and then it is cleaned and wiped clean, Transfer to nickel plating and sintering procedure OP80.

Nickel Plating and Sintering Procedure (as shown in FIG. 6) OP80 is a chip in which an electroless electroplating solution (nickel water) is first prepared and heated, and heated to about 75 ° C. and high temperature vitrification is completed. The surface 1 is first subjected to an activation treatment, then left on a nickel-plated basket stand, and fed into an electroless plating solution to advance the primary nickel plating 8 and then taken out. Next, the chip 1 is sent into water and washed, and then IPA (isopropyl alcohol) is added.
The chips 1 are transferred to a tank to proceed with dehydration, and the dehydrated chips 1 are left to dry on an electric heating plate. After the drying is completed, the chip 1 is sandwiched on the chip cradle. After that, the chip 1 is placed in a sintered quartz tube at about 650 ° C., passed through nitrogen for about 1 hour, and then taken out, and the chip after sintering 1 is plated once more (secondary), the liner and the iron pieces are localized, and the procedure with gel OP9
Move to 0.

The procedure for attaching a liner and a ferrous piece stereotactic gel (as shown in FIGS. 7 and 8) OP90 is to place a glass liner 10 on an electric heating plate 9 at about 120 ° C. and to apply white wax 11
Is melted on the surface of the liner 10 in an appropriate amount, and the chip 1 completed by the secondary plating is solidified on the glass liner 10 in which the white wax 11 is melted on the surface, and the white wax 11 is melted to Cover the surface. In addition to this, a rubber tape 13 having a small number of small iron pieces 12 adhered to one bottom side is accurately adhered to the upper bridge of the chip 1 with white wax 11. Each small circular iron piece 12 adhered to the bottom side surface of the rubber tape 13 has a slightly larger area than each end surface of the chip 1 which is not filled with the glass solution 7. As a result, when the rubber tape 13 having some small circular iron pieces 12 adhered thereto is pasted and bonded on the chip 1, those small circular iron pieces 12 do not just fill the glass solution 7 on the P surface of the chip 1. Adheres closely to the end face. Therefore, each small circular iron piece 12 can be weighted at the upper end, and the adhesion of each small circular iron piece 12 and the chip 1 can be more closely combined. After that, the small circular iron pieces 12 are withdrawn from the heating plate and the iron pieces 12 and The chip 1 of the glass liner 10 is adhesively fixed, and then transferred onto a naturally cooled flat plate to be cooled, and the rubber tape is peeled off, and transferred to the next sand blowing and circular chip separation procedure OP100.

Sand spraying and circular chip separation procedure OP
In 100, the semi-finished products completed in the previous one step OP90 are thrown into the sand blower in the set state in order, and the small circular iron pieces 1 are put on the surface of the chip 1 by the sand blower.
Proceed with the procedure for spraying sand against the side where 2 is adhered. Once the tip 1 has completed the sand blowing by the sand blower, it is inspected whether the part of the tip 1 where the small circular iron piece 12 is not adhered has already blown, and when it blows, we use the glass liner 10 Clearly and with the guarantee of many small circular iron pieces 12, the part of the chip that has not been blown yet, the part of the chip that has blown and left them, that is, the small columnar crystal grains 14 (Fig.
As shown in). When the sand blasting procedure is completed, the glass liner 10 and a large number of crystal grains 14 left after the sand blasting are immersed in trichloroethane for cleaning and separation, and after that, the surface of the crystal grains is shaken by using an ultrasonic wave. And remove the small circular iron pieces 12 with a magnet,
What remained is circular glass-coated circular crystal grains 14.

[0022]

Summarizing what has been described above, according to the present invention, the method for producing circular glass blunted diode crystal grains is designed so that the diode surface is not damaged even if various crystal chemicals are immersed in the subsequent assembly manufacturing process. It can be manufactured, it can reduce environmental pollution, it can be made into a circular, pointless shape, and can produce more stable diode grains with electrical characteristics, which will improve the effectiveness and suit practical use, In addition, since it has industrial utility value, it can be said to be an ideal invention.

[Brief description of drawings]

FIG. 1 is a block diagram showing a manufacturing procedure according to an embodiment of the present invention.

FIG. 2 is a diagram showing chip-coated phosphorescent agent diffusion in an example of the present invention.

FIG. 3 is a diagram showing a state after the diffusion tip according to the embodiment of the present invention is exposed to light.

FIG. 4 is a view showing a state after the diffusion tip according to the embodiment of the present invention has been tentatively etched.

FIG. 5 is a view showing a glass solution for coating a grid layer of a diffusion tip in an example of the present invention.

FIG. 6 is a diagram showing a state after the diffusion tip nickel plating according to the embodiment of the present invention.

FIG. 7 is a diagram showing a state in which each small circular iron piece according to the present invention is stuck on a diffusion chip at an accurate position.

FIG. 8 is a cross-sectional view showing a diffusion tip, a glass liner, and each small circular iron piece after stereotactic gel matching in an example of the present invention.

FIG. 9 is a cross-sectional view showing the columnar crystal grains formed after the completion of sand spraying in the example of the present invention.

[Explanation of symbols]

 1 chip 2 phosphorescent agent 3 light cover (mask) 4 glass piece 5 circular translucent zone 6 circular groove tank 7 glass solution 8 primary nickel plating 9 electric heating plate 10 glass liner 11 white wax (wax) 12 small circular iron piece 13 Rubber tape 14 Round crystal grains

Claims (5)

[Claims] 1. A light cover in which a surface of a diffusion chip (chip = crystal piece) is coated with a single light blocker, and a slight circular translucent zone is designed on the single surface on the P surface of the chip. The chip, which is provided with a light cover and is covered with a light cover, is sent to a photoconductor to be exposed and exposed with a developer, and then a portion not exposed to an acid solution is etched up to the N portion of the lower layer to form a concave groove tank. , And, after removing the light blocking agent with a solvent, further remove the divergent water to make the grid layer clean so that it appears, and after surely filling the grid layer of the etched groove tank with a glass solution, After being injected into a quartz tube to complete crystal vitrification at high temperature, a single layer of nickel was plated,
After sending it into a quartz tube and sintering it, nickel plating was performed once more, and a single white wax glass liner (Liner) was laid on the upper edge of the quartz tube. The nickel-plated chip is left on the glass liner paving the white wax, and the whole surface of the chip is covered with white wax, and then a small amount of small round iron pieces are further attached in advance. Accurately attach the rubber tape to the chip to combine, and remove the chip that has been mixed for a while from the electric heating plate,
Then, the chips were transferred to a naturally cooled flat plate, and after being cooled, the chips were stripped off the rubber tape and sent into a sand blower (Sand Blower). When the sand spraying is completed by the spraying procedure, that is, a large number of small circular grains are formed on the glass liner, and the glass liner and a large number of small circular grains are trichloroethene (trichloroethene).
ane) to clean, separate, and suck out the iron pieces with a magnet. 2. The round glass blunting diode according to claim 1, wherein the etching acid liquid is a mixed composition of 9 parts nitric acid, 9 parts glacial acetic acid, 14 parts hydrogen hydrofluoric acid and 4 parts sulfuric acid. Crystal grain manufacturing method. 3. The solvent for removing the light blocking agent is oxyflur (Ox
The method for producing round glass blunted diode crystal grains according to claim 1, wherein the mixture composition is a mixture of yful) and sulfuric acid. 4. The round glass blunting according to claim 1, wherein the glass solution is prepared by adding an appropriate amount of deionized water to glass powder and further adding 5% of an adhesive to sufficiently stir the composition. Manufacturing method of diode grains. 5. The small circular iron piece adhered to the bottom side surface of the rubber tape has an area slightly larger than each end surface not filled with the glass solution on the chip, so that the small circular iron piece is adhered once. 2. The round glass blunted diode crystal according to claim 1, wherein each of the small circular iron pieces adheres to the end surface of the chip P surface not filled with the glass solution when the rubber tape is adhered to the chip. How to make grain.