JPH07157868A - Resistance heating evaporation source and thin film forming method using the same - Google Patents
Resistance heating evaporation source and thin film forming method using the sameInfo
- Publication number
- JPH07157868A JPH07157868A JP30370193A JP30370193A JPH07157868A JP H07157868 A JPH07157868 A JP H07157868A JP 30370193 A JP30370193 A JP 30370193A JP 30370193 A JP30370193 A JP 30370193A JP H07157868 A JPH07157868 A JP H07157868A
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- Prior art keywords
- thin film
- evaporation source
- main body
- vapor deposition
- deposition material
- Prior art date
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Abstract
(57)【要約】
【目的】 薄膜形成方法における従来技術の問題点を解
消し、簡便な装置構成でクラスターを生成し得る蒸発源
を提供する。
【構成】 蒸着材料１４が投入される本体１１と、該本
体と密閉可能な蓋１２とを有し、該本体が抵抗加熱によ
り発熱し、該蓋が該本体の発熱により蒸気化した蒸着材
料を放出する一又は複数の貫通孔１３を有してなる抵抗
加熱型蒸発源。
(57) [Summary] [Object] To provide an evaporation source capable of forming clusters with a simple apparatus configuration by solving the problems of the prior art in a thin film forming method. A main body 11 into which a vapor deposition material 14 is charged, and a lid 12 that can be sealed with the main body are provided. The main body generates heat by resistance heating, and the lid vaporizes the vapor deposition material by the heat of the main body. A resistance heating type evaporation source having one or a plurality of through holes 13 for discharging.
Description
【０００１】[0001]
【産業上の利用分野】本発明は、薄膜形成方法に関し、
特に蒸着材料を蒸発させてクラスターを生成するための
蒸発源に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film forming method,
In particular, it relates to an evaporation source for evaporating a vapor deposition material to generate clusters.
【０００２】[0002]
【従来の技術】常温固体状の物質を加熱蒸発させてクラ
スターを生成し、このクラスターを基体上に蒸着する薄
膜形成方法において、従来、クラスター生成は、円筒型
るつぼを電子衝撃法により加熱し、るつぼに設けられた
ノズルからクラスターを噴出させる方法によってなされ
ていた。2. Description of the Related Art In a thin film forming method in which a solid substance at room temperature is evaporated by heating to form clusters, and the clusters are vapor-deposited on a substrate, conventionally, cluster formation involves heating a cylindrical crucible by an electron impact method, This was done by a method of ejecting clusters from a nozzle provided in the crucible.
【０００３】[0003]
【発明が解決しようとする課題】上記従来法における電
子衝撃法は、フィラメントから放出された熱電子を加速
し、るつぼに衝突させてるつぼを加熱するものである。
この電子衝撃法においては、フィラメントを加熱するた
めの低電圧電源と、フィラメントから放出された熱電子
を加速するための高電圧電源との２つの電源が必要であ
り、また、放出された熱電子がるつぼ以外の方向に加速
されないように電界を制御しなければならない、という
問題があった。The electron impact method in the above conventional method is to accelerate the thermoelectrons emitted from the filament to heat the crucible which collides with the crucible.
This electron bombardment method requires two power sources, a low voltage power source for heating the filament and a high voltage power source for accelerating the thermoelectrons emitted from the filament. There was a problem that the electric field had to be controlled so that the electric field was not accelerated in directions other than the crucible.
【０００４】更に、るつぼ内で断熱膨張された蒸着材料
は、クラスターとして、るつぼに設けられたノズルから
噴出するが、蒸気化した蒸着物質がノズル付近で凝縮す
ることにより液化又は固化してノズルを塞ぐ場合があ
る、という問題もあった。Further, the vapor deposition material adiabatically expanded in the crucible is ejected as a cluster from a nozzle provided in the crucible, and the vaporized vapor deposition material is condensed or condensed in the vicinity of the nozzle to be liquefied or solidified to cause the nozzle to pass through the nozzle. There was also the problem that it might be blocked.
【０００５】本発明は、薄膜形成方法における従来技術
の上記問題点を解消し、簡便な装置構成でクラスターを
生成し得る蒸発源の提供と、この蒸発源を使用した薄膜
形成方法の提供を目的とするものである。An object of the present invention is to solve the above problems of the prior art in a thin film forming method, to provide an evaporation source capable of forming clusters with a simple apparatus structure, and to provide a thin film forming method using this evaporation source. It is what
【０００６】[0006]
【課題を解決するための手段】上記目的を達成する本発
明は、蒸着材料が投入される本体と、該本体と密閉可能
な蓋とを有し、該本体が抵抗加熱により発熱し、該蓋が
該本体の発熱により蒸気化した蒸着材料を放出する一又
は複数の貫通孔を有してなる抵抗加熱型蒸発源である。The present invention which achieves the above object has a main body into which a vapor deposition material is charged, and a lid capable of being sealed with the main body. The main body generates heat by resistance heating, Is a resistance heating type evaporation source having one or a plurality of through holes through which vaporized vapor deposition material is released by heat generation of the main body.
【０００７】また、本発明は、該蓋の貫通孔より放出さ
れる蒸着材料がクラスターであることを含むものであ
る。The present invention also includes that the vapor deposition material released from the through hole of the lid is a cluster.
【０００８】また、本発明は、該蓋の貫通孔近傍に加熱
手段を設けてなることを含むものである。The present invention also includes a heating means provided near the through hole of the lid.
【０００９】また、本発明は、蒸着材料を蒸発させてク
ラスターとして基板上に蒸着させる薄膜形成方法におい
て、クラスターを生成させるための蒸発源として上記い
ずれか一に記載の蒸発源を使用することを特徴とする薄
膜形成方法である。Further, according to the present invention, in the thin film forming method of evaporating a vapor deposition material to deposit on a substrate as a cluster, the evaporation source according to any one of the above is used as an evaporation source for generating a cluster. This is a characteristic thin film forming method.
【００１０】[0010]
【作用】本発明は、蒸着材料を投入する容器自体を抵抗
加熱により発熱させて、蒸着材料を加熱するので、従来
法による場合の複数の電源や煩雑な電界制御が不必要と
なる。According to the present invention, since the container itself in which the vapor deposition material is charged is heated by resistance heating to heat the vapor deposition material, a plurality of power sources and complicated electric field control in the conventional method are unnecessary.
【００１１】更に、蒸気化された蒸着材料が放出される
貫通孔近傍に加熱手段を設けることにより、蒸着材料が
凝縮して液化又は固化することによる貫通孔の目詰まり
を防止することができる。Further, by providing the heating means in the vicinity of the through hole from which the vaporized vapor deposition material is discharged, it is possible to prevent the through hole from being clogged due to the vaporization material being condensed and liquefied or solidified.
【００１２】この加熱手段としては、接触加熱又は非接
触加熱どちらでもよく、例えば、フィラメントによる接
触又は非接触加熱等が好適である。また、この加熱手段
の電源を蒸発源本体の加熱電源とは独立に設けることに
より貫通孔近傍の温度を本体とは独立に制御することが
できる。The heating means may be either contact heating or non-contact heating, and for example, filament contact or non-contact heating is suitable. Further, the temperature of the vicinity of the through hole can be controlled independently of the main body by providing the power source of the heating means independently of the heating power source of the evaporation source main body.
【００１３】本体を構成する材料としては、タンタル、
モリブデン、タングステン、グラファイト等を挙げるこ
とができる。The material constituting the main body is tantalum,
Examples thereof include molybdenum, tungsten, graphite and the like.
【００１４】本体の形状はボート型であることが操作性
の観点から好ましい。From the viewpoint of operability, it is preferable that the main body has a boat shape.
【００１５】蓋を構成する材料としては、タンタル、モ
リブデン、タングステン、グラファイト、アルミナ、ジ
ルコニア等を挙げることができる。Examples of the material forming the lid include tantalum, molybdenum, tungsten, graphite, alumina, zirconia and the like.
【００１６】蓋に設ける貫通孔は、蒸着材料をクラスタ
化することを考慮して、径２０μｍ〜５ｍｍとすること
が好ましい。It is preferable that the through hole provided in the lid has a diameter of 20 μm to 5 mm in consideration of clustering the vapor deposition material.
【００１７】本発明においては、本体と蓋とを密閉して
得られる内部表面に絶縁性被膜を設けてもよい。絶縁性
被膜としては、セラミックが好ましく、例えば、アルミ
ナ、ジルコニア等を挙げることができる。In the present invention, an insulating coating may be provided on the inner surface obtained by sealing the main body and the lid. The insulating coating is preferably ceramic, and examples thereof include alumina and zirconia.
【００１８】また、本発明薄膜形成方法は、本発明の蒸
発源により蒸着材料を蒸発させる他は、従来の薄膜形成
方法と同様である。The thin film forming method of the present invention is the same as the conventional thin film forming method except that the vapor deposition material is evaporated by the evaporation source of the present invention.
【００１９】[0019]
【実施例】以下、実施例により本発明を具体的に説明す
る。EXAMPLES The present invention will be specifically described below with reference to examples.
【００２０】実施例１ 図１は、本発明蒸発源の１態様を示す断面図である。図
中１１はボート型本体、１２は本体と密閉可能な蓋、１
３は蓋に設けた貫通孔、１４は蒸着材料、１５は加熱用
フィラメントである。本体１１は電流を通じることによ
り発熱する発熱抵抗体を具備しており、本体の発熱によ
り加熱された蒸着材料１４は蒸気化し、クラスターとな
り貫通孔１３より噴出する。このとき加熱用フィラメン
ト１５によって貫通孔近傍を加熱することによりクラス
ターが凝縮して液化又は固化することにより貫通孔を塞
ぐことを防止するものである。尚、加熱用フィラメント
は蓋と非接触に設けられ、その電源は本体加熱用電源と
は独立に設けられており、本体の加熱と貫通孔近傍の加
熱とを独立に制御することができる。Example 1 FIG. 1 is a sectional view showing one embodiment of the evaporation source of the present invention. In the figure, 11 is a boat type main body, 12 is a lid that can be sealed with the main body, 1
Reference numeral 3 is a through hole provided in the lid, 14 is a vapor deposition material, and 15 is a heating filament. The main body 11 is provided with a heating resistor that generates heat by passing an electric current, and the vapor deposition material 14 heated by the heat generation of the main body is vaporized and becomes clusters and is ejected from the through holes 13. At this time, heating of the vicinity of the through-hole by the heating filament 15 prevents the cluster from condensing and liquefying or solidifying to block the through-hole. The heating filament is provided in non-contact with the lid, and its power source is provided independently of the power source for heating the main body, so that heating of the main body and heating in the vicinity of the through hole can be controlled independently.
【００２１】実施例２ 図２は、本発明によるボート型蒸発源を使用した薄膜形
成方法の１例を説明する模式図である。図中、２１は真
空槽であり、不図示の真空排気装置に接続され、所定の
真空度に排気可能となっている。２２は回転可能な基板
ホルダー、２３は薄膜が蒸着される基板、２４はボート
型蒸発源、２５は水晶膜厚モニターである。Example 2 FIG. 2 is a schematic diagram for explaining an example of a thin film forming method using a boat type evaporation source according to the present invention. In the figure, reference numeral 21 denotes a vacuum tank, which is connected to a vacuum exhaust device (not shown) and can be exhausted to a predetermined vacuum degree. Reference numeral 22 is a rotatable substrate holder, 23 is a substrate on which a thin film is deposited, 24 is a boat evaporation source, and 25 is a crystal film thickness monitor.
【００２２】ボート型蒸発源２４の内部にＭｇＦ2を充
填し、本体に通電することにより本体自身を発熱させ、
蒸発源内部に充填されたＭｇＦ2を蒸気化させ貫通孔よ
りクラスターとして噴出させ基板２３上に蒸着させる。
このとき、基板ホルダーを回転させることにより、基板
状に蒸着材料を均一に蒸着させることができる。The inside of the boat type evaporation source 24 is filled with MgF 2 and the main body is energized to generate heat,
MgF 2 filled in the evaporation source is vaporized and ejected as clusters from the through holes to be deposited on the substrate 23.
At this time, by rotating the substrate holder, the deposition material can be uniformly deposited on the substrate.
【００２３】本発明においては、るつぼによるクラスタ
ー生成と比較して蒸着材料の充填量が増加されるので、
蒸着材料の補給、蒸発源の交換等のメンテナンスの時間
間隔が長くなり、連続した薄膜形成が可能となる。In the present invention, since the filling amount of the vapor deposition material is increased as compared with the cluster formation by the crucible,
The time interval for maintenance such as replenishment of vapor deposition material and replacement of the evaporation source becomes long, and continuous thin film formation becomes possible.
【００２４】実施例３ 図３は、本発明蒸発源を複数使用して薄膜を形成する１
例を示す俯瞰透視図及び断面図である。Example 3 FIG. 3 shows a method of forming a thin film by using a plurality of evaporation sources of the present invention 1
It is the overhead-view perspective view and sectional drawing which show an example.
【００２５】この例においては、蒸発源３４は３個使用
されており、基板３３の鉛直下方に、貫通孔位置の基板
上への射影像が基板半径方向に等間隔となるように設置
されている。即ち、５つの径１ｍｍの貫通孔を直線状に
２０ｍｍ間隔で設けた蒸発源を３個用意し、図示のごと
く並べることにより、直径６００ｍｍの円形基板上に均
一な薄膜を形成することができる。図４は、このとき形
成された薄膜の膜厚分布を示すグラフである。図中、横
軸は基板の位置を表し、縦軸は基板中心の膜厚を１とし
たときの相対膜厚を表す。この例では、膜厚分布は±１
％以内の精度である。In this example, three evaporation sources 34 are used, and they are installed vertically below the substrate 33 so that projected images of through-hole positions on the substrate are evenly spaced in the radial direction of the substrate. There is. That is, by preparing three evaporation sources in which five through holes each having a diameter of 1 mm are linearly provided at intervals of 20 mm and arranged as illustrated, a uniform thin film can be formed on a circular substrate having a diameter of 600 mm. FIG. 4 is a graph showing the film thickness distribution of the thin film formed at this time. In the figure, the horizontal axis represents the position of the substrate, and the vertical axis represents the relative film thickness when the film thickness at the substrate center is 1. In this example, the film thickness distribution is ± 1
The accuracy is within%.
【００２６】蒸発源を複数使用することにより、大面積
の薄膜形成が可能となり、量産性が向上する。By using a plurality of evaporation sources, a large-area thin film can be formed and mass productivity is improved.
【００２７】実施例４ 図５は、本発明蒸発源の別の態様を示す断面図である。
図中、５１はボート型本体、５２は蓋、５３は貫通孔、
５４は加熱用フィラメント、５５は蒸着材料、５６は本
体と蓋とが密閉されて形成される空間内壁を被覆する絶
縁性被膜である。Embodiment 4 FIG. 5 is a sectional view showing another embodiment of the evaporation source of the present invention.
In the figure, 51 is a boat type main body, 52 is a lid, 53 is a through hole,
Reference numeral 54 is a heating filament, 55 is a vapor deposition material, and 56 is an insulating coating that covers the inner wall of the space formed by sealing the main body and the lid.
【００２８】本体及び蓋はタングステンにより構成され
ており、蒸着材料が充填される空間の内壁はアルミナに
より被覆されており、金属部分に蒸着材料が接触しない
ように構成されている。貫通孔の径は１ｍｍとした。The main body and the lid are made of tungsten, and the inner wall of the space filled with the vapor deposition material is coated with alumina so that the metal portion does not come into contact with the vapor deposition material. The diameter of the through hole was 1 mm.
【００２９】この蒸発源を用いてガラス基板上に薄膜形
成を行った。本体にアルミニウムを充填し、蓋を本体に
密閉して、本体を加熱電極に取り付けた。クラスターが
形成される蒸気圧以上になる温度８００℃程度まで本体
を加熱した。また、本体とは別電源に接続した加熱用フ
ィラメントに通電し、貫通孔近傍の温度がアルミニウム
の融点６６０℃以上の温度になるように制御した。蒸発
源内部で発生したクラスターは貫通孔から基板上へ噴射
され、基板上に厚さ０．１μｍの薄膜が形成された。A thin film was formed on a glass substrate using this evaporation source. The body was filled with aluminum, the lid was sealed to the body, and the body was attached to the heating electrode. The main body was heated to a temperature of about 800 ° C. at which the vapor pressure at which clusters were formed was exceeded. Further, the heating filament connected to a power source separate from the main body was energized to control the temperature in the vicinity of the through hole to a temperature of 660 ° C. or higher of the melting point of aluminum. The clusters generated inside the evaporation source were jetted onto the substrate from the through holes, and a thin film having a thickness of 0.1 μm was formed on the substrate.
【００３０】同様に、蒸着材料を銀として基板上に厚さ
０．１μｍの銀薄膜を形成した。Similarly, a silver thin film having a thickness of 0.1 μm was formed on the substrate by using silver as a vapor deposition material.
【００３１】表１に上記方法により作製した薄膜の表面
粗さを、従来のるつぼ法による薄膜の表面粗さとともに
示した。また、表２には上記方法により作製した薄膜の
反射率を、従来のるつぼ法による薄膜の反射率とともに
示した。Table 1 shows the surface roughness of the thin film produced by the above method, together with the surface roughness of the thin film formed by the conventional crucible method. Table 2 shows the reflectance of the thin film produced by the above method, together with the reflectance of the thin film prepared by the conventional crucible method.
【００３２】[0032]
【表１】 [Table 1]
【００３３】[0033]
【表２】 表１に示されるように本発明製造方法による薄膜の表面
粗さは薄膜形成前の基板の表面粗さとほぼ変わらず、非
常に緻密な膜であることが分かる。[Table 2] As shown in Table 1, it can be seen that the surface roughness of the thin film formed by the manufacturing method of the present invention is almost the same as the surface roughness of the substrate before the thin film is formed, and the film is extremely dense.
【００３４】また、表２に示されるように、本発明製造
方法による薄膜の反射率は銀薄膜、アルミニウム薄膜両
者において、従来技術による薄膜より２％高いことが認
められた。Further, as shown in Table 2, it was confirmed that the reflectance of the thin film produced by the method of the present invention was higher by 2% than that of the conventional thin film in both the silver thin film and the aluminum thin film.
【００３５】[0035]
【発明の効果】本発明の蒸発源により、薄膜形成法にお
いて蒸着材料を蒸発させるための蒸発源の構成を簡略化
することができ、蒸発材料を噴出させる貫通孔が目詰ま
りを起こさず、煩雑な電界制御の必要のないクラスター
生成が可能になる。According to the evaporation source of the present invention, the structure of the evaporation source for evaporating the evaporation material in the thin film forming method can be simplified, the through holes for ejecting the evaporation material do not become clogged, and it is complicated. Clusters can be generated without the need for precise electric field control.
【００３６】また、上記蒸発源を使用する本発明薄膜形
成方法により、緻密で反射率の高い薄膜を提供すること
ができる。Further, the thin film forming method of the present invention using the above evaporation source can provide a dense thin film having a high reflectance.
【００３７】また、本発明の蒸発源を使用することによ
り、蒸着材料の充填量を増加させることができるので、
連続薄膜形成や大面積薄膜形成に有利である。Further, by using the evaporation source of the present invention, the filling amount of the vapor deposition material can be increased,
It is advantageous for continuous thin film formation and large area thin film formation.
【図１】本発明の蒸発源の一態様を示す断面図である。FIG. 1 is a sectional view showing an embodiment of an evaporation source of the present invention.
【図２】本発明の薄膜形成方法の一例を示す模式図であ
る。FIG. 2 is a schematic view showing an example of a thin film forming method of the present invention.
【図３】本発明の薄膜形成方法の他の例を示す模式図で
あり、（ａ）俯瞰透視図、（ｂ）断面図である。FIG. 3 is a schematic view showing another example of the thin film forming method of the present invention, which is (a) a perspective view and (b) a sectional view.
【図４】本実施例により作製した薄膜の膜厚分布を示す
グラフである。FIG. 4 is a graph showing a film thickness distribution of a thin film manufactured according to this example.
【図５】本発明の蒸発源の他の態様を示す断面図であ
る。FIG. 5 is a sectional view showing another embodiment of the evaporation source of the present invention.
１１、５１ 本体 １２、５２ 蓋 １３、５３ 貫通孔 １４、５４ 蒸着材料 １５、５５ 加熱手段 ２１、３１ 真空槽 ２２、３２ 基板ホルダー ２３、３３ 基板 ２４、３４ 蒸発源 ２５、３５ 水晶膜厚モニター ５６ 絶縁被膜 11, 51 Main body 12, 52 Lid 13, 53 Through hole 14, 54 Evaporation material 15, 55 Heating means 21, 31 Vacuum tank 22, 32 Substrate holder 23, 33 Substrate 24, 34 Evaporation source 25, 35 Quartz film thickness monitor 56 Insulation film
───────────────────────────────────────────────────── フロントページの続き (72)発明者 沢村 光治 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Koji Sawamura 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc.
Claims (4)
密閉可能な蓋とを有し、該本体が抵抗加熱により発熱
し、該蓋が該本体の発熱により蒸気化した蒸着材料を放
出する一又は複数の貫通孔を有してなる抵抗加熱型蒸発
源。1. A main body into which a vapor deposition material is charged, and a lid capable of being sealed with the main body, wherein the main body generates heat by resistance heating, and the lid releases vaporized vapor deposition material due to heat generation of the main body. A resistance heating type evaporation source having one or a plurality of through holes.
クラスターである請求項１に記載の抵抗加熱型蒸発源。2. The resistance heating type evaporation source according to claim 1, wherein the vapor deposition material released from the through hole of the lid is a cluster.
る請求項１又は２に記載の抵抗加熱型蒸発源。3. The resistance heating type evaporation source according to claim 1, wherein a heating means is provided near the through hole of the lid.
基板上に蒸着させる薄膜形成方法において、クラスター
を生成させるための蒸発源として請求項１乃至４いずれ
か一に記載の蒸発源を使用することを特徴とする薄膜形
成方法。4. A thin film forming method of evaporating a vapor deposition material to form a cluster on a substrate, wherein the evaporation source according to claim 1 is used as an evaporation source for forming a cluster. A characteristic thin film forming method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30370193A JPH07157868A (en) | 1993-12-03 | 1993-12-03 | Resistance heating evaporation source and thin film forming method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30370193A JPH07157868A (en) | 1993-12-03 | 1993-12-03 | Resistance heating evaporation source and thin film forming method using the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH07157868A true JPH07157868A (en) | 1995-06-20 |
Family
ID=17924210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30370193A Pending JPH07157868A (en) | 1993-12-03 | 1993-12-03 | Resistance heating evaporation source and thin film forming method using the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07157868A (en) |
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|---|---|---|---|---|
| US6478876B1 (en) * | 1999-05-26 | 2002-11-12 | Masaji Asamoto | Apparatus for coating a body by using ion plating |
| WO2003062486A1 (en) * | 2002-01-22 | 2003-07-31 | Yonsei University | Linear or planar type evaporator for the controllable film thickness profile |
| JP2006219755A (en) * | 2005-02-14 | 2006-08-24 | Toshiba Matsushita Display Technology Co Ltd | Vapor deposition system |
| JP2007080739A (en) * | 2005-09-15 | 2007-03-29 | Toshiba Corp | Crucible for vacuum evaporation apparatus and method for manufacturing organic EL display using the same |
| JP2008088496A (en) * | 2006-10-02 | 2008-04-17 | Eiko Engineering Co Ltd | Molecular beam source cell for thin film deposition |
| KR100889758B1 (en) * | 2002-09-03 | 2009-03-20 | 삼성모바일디스플레이주식회사 | Heating vessel of organic thin film forming apparatus |
| US20110195187A1 (en) * | 2010-02-10 | 2011-08-11 | Apple Inc. | Direct liquid vaporization for oleophobic coatings |
| KR101233460B1 (en) * | 2012-07-21 | 2013-02-18 | 주식회사 야스 | A Linear Deposition Source With Direct Heating |
| KR101248314B1 (en) * | 2009-07-21 | 2013-03-27 | 가부시키가이샤 히다치 하이테크놀로지즈 | Film forming device and film forming method |
| US8715779B2 (en) | 2011-06-24 | 2014-05-06 | Apple Inc. | Enhanced glass impact durability through application of thin films |
| JP2015168880A (en) * | 2014-03-11 | 2015-09-28 | 株式会社半導体エネルギー研究所 | crucible and vapor deposition apparatus |
| CN109423611A (en) * | 2017-08-28 | 2019-03-05 | 佳能特机株式会社 | Evaporate source container and evaporation source |
| JP2019183248A (en) * | 2018-04-17 | 2019-10-24 | 株式会社アルバック | Vapor deposition source for vacuum deposition apparatus |
| CN116536627A (en) * | 2023-07-06 | 2023-08-04 | 巨玻固能(苏州)薄膜材料有限公司 | Method for coating ZnS or SiO by adopting ionization evaporation source |
-
1993
- 1993-12-03 JP JP30370193A patent/JPH07157868A/en active Pending
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6478876B1 (en) * | 1999-05-26 | 2002-11-12 | Masaji Asamoto | Apparatus for coating a body by using ion plating |
| WO2003062486A1 (en) * | 2002-01-22 | 2003-07-31 | Yonsei University | Linear or planar type evaporator for the controllable film thickness profile |
| CN100340694C (en) * | 2002-01-22 | 2007-10-03 | 延世大学校 | Linear or planar evaporator with controllable film thickness distribution |
| KR100889758B1 (en) * | 2002-09-03 | 2009-03-20 | 삼성모바일디스플레이주식회사 | Heating vessel of organic thin film forming apparatus |
| US7962016B2 (en) | 2002-09-03 | 2011-06-14 | Samsung Mobile Display Co., Ltd. | Heating crucible for organic thin film forming apparatus |
| JP2006219755A (en) * | 2005-02-14 | 2006-08-24 | Toshiba Matsushita Display Technology Co Ltd | Vapor deposition system |
| JP2007080739A (en) * | 2005-09-15 | 2007-03-29 | Toshiba Corp | Crucible for vacuum evaporation apparatus and method for manufacturing organic EL display using the same |
| JP2008088496A (en) * | 2006-10-02 | 2008-04-17 | Eiko Engineering Co Ltd | Molecular beam source cell for thin film deposition |
| KR101248314B1 (en) * | 2009-07-21 | 2013-03-27 | 가부시키가이샤 히다치 하이테크놀로지즈 | Film forming device and film forming method |
| US20110195187A1 (en) * | 2010-02-10 | 2011-08-11 | Apple Inc. | Direct liquid vaporization for oleophobic coatings |
| US8715779B2 (en) | 2011-06-24 | 2014-05-06 | Apple Inc. | Enhanced glass impact durability through application of thin films |
| US9282653B2 (en) | 2011-06-24 | 2016-03-08 | Apple Inc. | Enhanced glass impact durability through application of thin films |
| KR101233460B1 (en) * | 2012-07-21 | 2013-02-18 | 주식회사 야스 | A Linear Deposition Source With Direct Heating |
| JP2015168880A (en) * | 2014-03-11 | 2015-09-28 | 株式会社半導体エネルギー研究所 | crucible and vapor deposition apparatus |
| CN109423611A (en) * | 2017-08-28 | 2019-03-05 | 佳能特机株式会社 | Evaporate source container and evaporation source |
| JP2019183248A (en) * | 2018-04-17 | 2019-10-24 | 株式会社アルバック | Vapor deposition source for vacuum deposition apparatus |
| CN116536627A (en) * | 2023-07-06 | 2023-08-04 | 巨玻固能(苏州)薄膜材料有限公司 | Method for coating ZnS or SiO by adopting ionization evaporation source |
| CN116536627B (en) * | 2023-07-06 | 2024-01-19 | 巨玻固能(苏州)薄膜材料有限公司 | Method for coating ZnS or SiO by adopting ionization evaporation source |
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