JPH0711637B2 - Ferroelectric liquid crystal element - Google Patents
Ferroelectric liquid crystal elementInfo
- Publication number
- JPH0711637B2 JPH0711637B2 JP26568486A JP26568486A JPH0711637B2 JP H0711637 B2 JPH0711637 B2 JP H0711637B2 JP 26568486 A JP26568486 A JP 26568486A JP 26568486 A JP26568486 A JP 26568486A JP H0711637 B2 JPH0711637 B2 JP H0711637B2
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- ferroelectric liquid
- alignment film
- conductive
- conductivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/137—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering
- G02F1/139—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent
- G02F1/141—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells characterised by the electro-optical or magneto-optical effect, e.g. field-induced phase transition, orientation effect, guest-host interaction or dynamic scattering based on orientation effects in which the liquid crystal remains transparent using ferroelectric liquid crystals
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
Description
【発明の詳細な説明】 (産業上の利用分野) 本発明は強誘電性液晶素子に関し、更に詳しくは、液晶
層に接する配向膜の導電率を特定値以上とすることによ
って表示特性が改善された強誘電性液晶素子に関する。Description: TECHNICAL FIELD The present invention relates to a ferroelectric liquid crystal device, and more specifically, the display characteristics are improved by setting the conductivity of an alignment film in contact with a liquid crystal layer to a specific value or more. And a ferroelectric liquid crystal device.
(従来の技術) 従来、液晶を一対の対向電極間に挟持させてなる種々の
液晶表示素子が提案されているが、DSM(Dynamic Scatt
ering Mode)型の液晶表示素子以外については、液晶層
中のナトリウムイオン等のプラスイオンや塩素イオン等
のマイナスイオン等の荷電体をコントロールする必要は
あまり認められていない。(Prior Art) Conventionally, various liquid crystal display elements in which a liquid crystal is sandwiched between a pair of opposing electrodes have been proposed. However, DSM (Dynamic Scatt
Other than the liquid crystal display device of the ering mode) type, it has not been recognized that it is necessary to control charged bodies such as positive ions such as sodium ions and negative ions such as chlorine ions in the liquid crystal layer.
その理由は、現在普及しているTN(Twisted Nematic)
型液晶表示素子〔例えば、M.SchadtとW.Helfrich著、
“Applied Physics Letters"、Vol.18、NO.4(1971.2.1
5)、P.127〜128の“Voltage Dependent Optical Activ
ity of a Twisted Nematic Liquid Crystal"参照〕にお
いては、 (1)過度のイオン流が液晶分子の配列を乱す。The reason is TN (Twisted Nematic), which is currently popular.
Type liquid crystal display device [for example, by M. Schadt and W. Helfrich,
"Applied Physics Letters", Vol.18, NO.4 (1971.2.1
5), P.127-128, “Voltage Dependent Optical Activ
In "ity of a Twisted Nematic Liquid Crystal"], (1) excessive ion flow disturbs the alignment of liquid crystal molecules.
(2)液晶材料の耐久性を低下させる。(2) The durability of the liquid crystal material is reduced.
(3)液晶層にかかる電圧の時定数が短くなる。(3) The time constant of the voltage applied to the liquid crystal layer becomes short.
等の影響がイオン等の導電性物質によって引き起こされ
ることが考えられらたが、実際には液晶を適当に精製す
ることによって液晶の体積抵抗を109Ωcm以上に上げた
り、素子の構成過程で液晶の汚染防止を効果的にする等
の手段により前述の(1)および(2)の問題は十分対
応可能であり、一方駆動方式においては、交流駆動体、
リフレッシュ、蓄積型が基本となるため、前記(3)の
点も深刻な問題とはならなかったことによる。It was thought that the effects such as the above might be caused by conductive substances such as ions, but in reality, by appropriately refining the liquid crystal, the volume resistance of the liquid crystal could be increased to 10 9 Ωcm or more, or in the process of forming the device. The above-mentioned problems (1) and (2) can be sufficiently addressed by means such as effective prevention of liquid crystal contamination.
This is because the point of (3) above did not become a serious problem because the refresh and storage types are basically used.
これに対して、近年世界的に開発が進んでいる強誘電性
液晶素子の場合には、液晶層中のイオン等の荷電体の挙
動が、強誘電性液晶素子の特性に重大な影響を与えるこ
とが明らかにされている。On the other hand, in the case of a ferroelectric liquid crystal element which is being developed worldwide in recent years, the behavior of charged bodies such as ions in the liquid crystal layer has a significant influence on the characteristics of the ferroelectric liquid crystal element. It has been revealed.
例えば、クラークとラガヴァル等の提案した強誘電性液
晶素子の構成においては、第2図に示されるように液晶
層内で各液晶分子の双極子の方向が揃い、液晶の自発分
極が生じている。For example, in the structure of the ferroelectric liquid crystal device proposed by Clark and Lagavar, the dipole directions of the liquid crystal molecules are aligned in the liquid crystal layer as shown in FIG. 2, and spontaneous polarization of the liquid crystal occurs. .
この自発分極の存在は、強誘電性液晶素子のスイッチン
グ特性の条件であるため、この自極分極による電荷の片
寄りは、SSFLCD(Surface Stabilized Ferroelectric L
iquid Crystal Display)においては不可避なものであ
る。Since the presence of this spontaneous polarization is a condition for the switching characteristics of the ferroelectric liquid crystal element, the deviation of the charge due to this spontaneous polarization causes SSFLCD (Surface Stabilized Ferroelectric L
iquid Crystal Display) is inevitable.
(発明が解決使用としている問題) 以上の如き強誘電性液晶素子における液晶分子の自発分
極は必然的なものであるが、この分極電荷の影響によっ
て、素子の非駆動時(すなわち、メモリー状態)におい
て液晶層の双安定性を損なうような変化が生じるという
問題が生じることが判明した。(Problems to be solved and used by the invention) Although spontaneous polarization of liquid crystal molecules in a ferroelectric liquid crystal device as described above is inevitable, due to the influence of this polarization charge, the device is not driven (that is, in a memory state). It has been found that there arises a problem that a change occurs which impairs the bistability of the liquid crystal layer.
すなわち、素子内にはITO電極等の透明電極が存在し、
その像に誘電体を介して液晶層に接する構成が一般的で
あるが、その場合にメモリー状態(印加電圧=0)で
も、液晶層内には液晶分子の分極電荷によって生じる電
界が存在して、この電界によって液晶層内には液晶分子
の分極電荷によって生じる電界が存在して、この電界に
よって液晶層内に存在しているイオン性不純物が泳動し
て、イオンの不均一な偏在が生じる。That is, there is a transparent electrode such as an ITO electrode in the element,
In general, the image is in contact with the liquid crystal layer via a dielectric, but in that case, even in a memory state (applied voltage = 0), an electric field generated by the polarization charge of liquid crystal molecules exists in the liquid crystal layer. Due to this electric field, an electric field generated by the polarization charge of liquid crystal molecules exists in the liquid crystal layer, and the ionic impurities existing in the liquid crystal layer migrate due to this electric field, resulting in uneven distribution of ions.
このイオンの偏在によって、逆に液晶分子が拘束を受け
るため、液晶分子のスイッチング状態での双安定が乱さ
れ、更には素子のメモリー性自体の消滅をも誘引すると
いう重大な問題が生じ、現在の強誘電性液晶素子をディ
スプレイとして考えた場合大きな障害となっている。The uneven distribution of the ions, on the contrary, constrains the liquid crystal molecules, disturbing the bistable state of the liquid crystal molecules in the switching state, and further causing a serious problem of inducing the disappearance of the memory property of the device. This is a major obstacle when considering the ferroelectric liquid crystal element as a display.
従って、強誘電性液晶素子においては液晶層内に存在す
るイオンによる問題を解決することが要望されている。Therefore, in the ferroelectric liquid crystal element, it is desired to solve the problem caused by the ions existing in the liquid crystal layer.
(問題点を解決するための手段) 本発明者は上記の如き従来技術の問題点を解決すべく鋭
意研究の結果、基板上に形成され液晶層に接する配向膜
の導電率を特定の値以上とすることによって上記の如き
従来技術の問題が解決され、強誘電性液晶素子の表示特
性を著しく向上させることができた。(Means for Solving Problems) As a result of earnest research to solve the problems of the above-described conventional techniques, the present inventor has determined that the conductivity of an alignment film formed on a substrate and in contact with a liquid crystal layer is equal to or more than a specific value. As a result, the problems of the prior art as described above were solved, and the display characteristics of the ferroelectric liquid crystal element could be remarkably improved.
すなわち、本発明は、少なくとも一方が配向膜を有する
2枚の対向した電極基板間に強誘電性液晶層を挟持して
なる強誘電性液晶素子において、該配向膜の少なくとも
一方の誘電率をρ=1×108Ωcm以下としたことを特徴
とする強誘電性液晶素子である。That is, the present invention relates to a ferroelectric liquid crystal device in which a ferroelectric liquid crystal layer is sandwiched between two facing electrode substrates, at least one of which has an alignment film, and the dielectric constant of at least one of the alignment films is ρ. = 1 × 10 8 Ωcm or less, which is a ferroelectric liquid crystal device.
次に本発明を更に詳しく説明する。Next, the present invention will be described in more detail.
本発明は、基板上に形成した配向膜の導電率をρ=1×
108Ωcm以下とした点に特徴を有する強誘電性液晶素子
である。In the present invention, the conductivity of the alignment film formed on the substrate is ρ = 1 ×
It is a ferroelectric liquid crystal device characterized by being set to 10 8 Ωcm or less.
本発明で用いる強誘電性液晶は、加えられる電界に応じ
て第一の光学的安定状態と第二の光学的安定状態とのい
ずれかを取るもの、すなわち、電界に対して双安定性を
有する液晶物質である。The ferroelectric liquid crystal used in the present invention has one of a first optical stable state and a second optical stable state depending on an applied electric field, that is, it has bistability with respect to an electric field. It is a liquid crystal substance.
以上の如き双安定性を有する強誘電性液晶としては、強
誘電性を有するカイラルスメクティック液晶が好まし
く、そのうちでは特にカイラルスメクティックC相(Sm
C*)またはH相(SmH*)の液晶が適している。これら
の強誘電性液晶は、“LEJOURNAL DE PHYSIOUE LETTERS"
36(L-69)1975、「Ferroelectric Liquid Crystals」;
Applied Physics Letters"36(11)1980、「Submicro S
econd Bistable Electrooptic Switching in Liquid Cr
ystals」;“固体物理"16(141)1981「液晶」等に記載
されており、より具体的には、例えば、デシロキシベン
ジリデン−P′−アミノ−2−メチルブチルシンナメー
ト(DOBAMBC)、 ヘキシルオキシベンジリデン−P′−アミノ−2−クロ
ロプロピルシンナメート(HOBACPC)および4−o−
(2−メチル)−ブチルレゾルシリデン−4′−オクチ
ルアニリン(MBRA8)等が挙げられる。As the ferroelectric liquid crystal having bistability as described above, a chiral smectic liquid crystal having ferroelectricity is preferable, and among them, a chiral smectic C phase (Sm
C * ) or H phase (SmH * ) liquid crystals are suitable. These ferroelectric liquid crystals are "LEJOURNAL DE PHYSIOUE LETTERS"
36 (L-69) 1975, "Ferroelectric Liquid Crystals";
Applied Physics Letters " 36 (11) 1980," Submicro S
econd Bistable Electrooptic Switching in Liquid Cr
ystals ”;“ Solid State Physics ”16 (141) 1981“ Liquid Crystal ”and the like, and more specifically, for example, desiloxybenzylidene-P′-amino-2-methylbutylcinnamate (DOBAMBC), hexyl. Oxybenzylidene-P'-amino-2-chloropropyl cinnamate (HOBACPC) and 4-o-
(2-methyl) -butyl resorcylidene-4'-octylaniline (MBRA8) and the like can be mentioned.
第3図示の例は、本発明で用いる強誘電性液晶素子の1
例を模式的に示すものであり、図中の1と1′はIn
2O3、SnO2あるいはITO(Indium-Tin-Oxide)等の透明電
極がコートされた基板(例えばガラス板)であり、これ
らの一対の基板の少なくとも一方には配向膜(図示な
し)が設けられ、これらの配向膜の間に前記の如き液晶
からなる液晶層2が、基板面に垂直になるように配向し
たSmC*相の液晶が封入されている。The third illustrated example is a ferroelectric liquid crystal device used in the present invention.
This is a schematic example, and 1 and 1'in the figure are In
A substrate (for example, a glass plate) coated with a transparent electrode such as 2 O 3 , SnO 2 or ITO (Indium-Tin-Oxide), and an alignment film (not shown) is provided on at least one of the pair of substrates. The liquid crystal layer 2 made of the above-described liquid crystal is enclosed between these alignment films, and the SmC * phase liquid crystal oriented so as to be perpendicular to the substrate surface is enclosed.
太線で示した線3が液晶分子を表わしており、この液晶
分子3はその分子に直交した双方に双極子モーメント
(P⊥)4を有している。A thick line 3 represents a liquid crystal molecule, and the liquid crystal molecule 3 has a dipole moment (P⊥) 4 on both sides orthogonal to the molecule.
このような強誘電性液晶素子の基板1と1′上の電極間
に一定の閾値以上の電圧を印加すると、液晶分子3のら
せん構造がほどみ、双極子モーメント(P⊥)4はすべ
て電界方向に向くように液晶分子3の配向方向を変える
ことができる。When a voltage above a certain threshold value is applied between the electrodes on the substrates 1 and 1'of such a ferroelectric liquid crystal element, the helical structure of the liquid crystal molecules 3 is unwound, and the dipole moment (P⊥) 4 is entirely the electric field. The alignment direction of the liquid crystal molecules 3 can be changed so as to face the direction.
液晶分子3は細長い形状を有しており、その長軸方向と
短軸方向で屈折率の異方性を示し、従って、例えば、基
板面の上下に互いにクロスニコルの位置関係に配置した
偏光子を置けば、電圧印加極性によって光学特性が変化
する液晶光学変調素子となることは容易に理解される。The liquid crystal molecules 3 have an elongated shape and exhibit anisotropy of refractive index in the major axis direction and the minor axis direction thereof. Therefore, for example, polarizers arranged in a crossed Nicol positional relationship above and below the substrate surface. It is easy to understand that the liquid crystal optical modulation element having the optical characteristics that changes depending on the polarity of voltage application can be obtained by placing.
更に液晶素子の厚さを充分に薄くした場合(例えば1μ
m)には、第4図に示すように電界を印加していない状
態でも液晶分子のらせん構造はほどけ(非らせん構
造)、その双極子モーメントPまたはP′は上向き(4
a)または下向き(4b)のいずれかの状態をとる。この
ようなセルに第4図に示す如く一定の閾値以上の極性の
異なる電界EまたはE′を所定時間付与すると、双極子
モーメントは電界EまたはE′の電界ベクトルに対応し
て上向き4aまたは下向き4bと向きを変え、それに応じて
液晶分子は第1の配向状態5かあるいは第二の配向状態
5′の何れか一方に配向する。このような強誘電性液晶
素子を光学変調素子として用いることの利点は2つあ
る。Furthermore, when the thickness of the liquid crystal element is sufficiently thin (for example, 1μ
In m), as shown in FIG. 4, the helical structure of the liquid crystal molecule is unwound (non-helical structure) even when no electric field is applied, and its dipole moment P or P ′ is upward (4
Take either a) or downward (4b). As shown in FIG. 4, when electric fields E or E'having different polarities, which are equal to or more than a certain threshold value, are applied to such a cell for a predetermined time, the dipole moment is directed upward 4a or downward depending on the electric field vector of the electric field E or E '. 4b, and the liquid crystal molecules are aligned in either the first alignment state 5 or the second alignment state 5 'accordingly. There are two advantages of using such a ferroelectric liquid crystal element as an optical modulation element.
第1には、応答速度が極めて速いこと、第2に液晶分子
の配向が双安定性状態を有することである。第2の点を
例えば第4図によって説明すると、電界Eを印加すると
液晶分子は第1の配向状態5に配向するが、この状態で
は電界を切っても安定である。また、逆向きの電界E′
を印加すると、液晶分子は第2の配向状態5′に配向し
てその分子の向きを変えるが、やはり電界を切ってもこ
の状態に留まっている。また、与える電界Eが一定の閾
値を越えない限り、それぞれの配向状態にやはり維持さ
れている。このような応答速度の速さと、双安定性が有
効に実現されるには、セルとしてできるだけ薄い方が好
ましく、一般的には0.5〜20μm、特に1〜5μmが適
している。この種の強誘電性液晶を用いるマトリックス
電極構造を有する強誘電性液晶素子は、例えば、クラー
クとラガバルにより、米国特許第4367924号明細書に提
案されている。Firstly, the response speed is extremely fast, and secondly, the alignment of the liquid crystal molecules has a bistable state. Explaining the second point with reference to FIG. 4, for example, when an electric field E is applied, the liquid crystal molecules are aligned in the first alignment state 5, but in this state, it is stable even when the electric field is cut off. The opposite electric field E ′
When a voltage is applied, the liquid crystal molecules are oriented in the second alignment state 5'and change their orientation, but they remain in this state even when the electric field is turned off. Further, as long as the applied electric field E does not exceed a certain threshold value, the respective alignment states are also maintained. In order to effectively realize such a high response speed and bistability, it is preferable that the cell is as thin as possible, and generally 0.5 to 20 μm, particularly 1 to 5 μm is suitable. A ferroelectric liquid crystal device having a matrix electrode structure using a ferroelectric liquid crystal of this type has been proposed by Clark and Lagabal in US Pat. No. 4,367,924.
上述の強誘電性液晶素子は液晶層内に存在するイオンに
よって種々の問題を生じるものであった。The ferroelectric liquid crystal device described above causes various problems due to the ions existing in the liquid crystal layer.
本発明者はこのような問題点を解決すべく鋭意研究の結
果、これらの液晶層が接する配向膜の導電率を上げるこ
とによって、液晶層内に存在するイオンが原因となって
生じていたイオンの偏在およびそれによる液晶分子への
悪影響がなくなり、従来技術の問題点が解決されること
を知見したものである。As a result of earnest studies to solve such problems, the present inventor has found that by increasing the conductivity of the alignment film in contact with these liquid crystal layers, ions generated in the liquid crystal layer are caused by the ions. It has been found that the uneven distribution of and the adverse effects on liquid crystal molecules due to the uneven distribution are eliminated, and the problems of the conventional techniques are solved.
本発明の強誘電性液晶素子の好ましい1例の断面図を第
1図に図解的に示す。図中11はガラス板等の基板であ
り、12は該基板11上に形成されたITO等からなる透明電
極層であり、13は透明電極上に形成された導電性配向膜
層であり、14はプラスイオン、15はマイナスイオンであ
る。18は液晶層を有し、16および17はその中でとり得る
二つの液晶状態を示す。A cross-sectional view of a preferred example of the ferroelectric liquid crystal device of the present invention is schematically shown in FIG. In the figure, 11 is a substrate such as a glass plate, 12 is a transparent electrode layer made of ITO or the like formed on the substrate 11, 13 is a conductive alignment film layer formed on the transparent electrode, 14 Is a positive ion and 15 is a negative ion. 18 has a liquid crystal layer, and 16 and 17 show two possible liquid crystal states.
本発明の強誘電性液晶素子は、第1図に図解的に示す如
く、液晶層に接する配向膜の少なくとも一方の導電率を
ρ=1×108Ωcm以下としたことを主たる特徴とするも
のであり、このような特徴故に液晶層中のイオンの偏在
とそれによる悪影響はなくなり、且つ液晶分子の分極に
よる内部電界を緩和することによって、液晶分子の双安
定性を高めてスイッチング特性等をより向上させること
ができた。The ferroelectric liquid crystal device of the present invention is mainly characterized in that the conductivity of at least one of the alignment films in contact with the liquid crystal layer is ρ = 1 × 10 8 Ωcm or less, as schematically shown in FIG. Therefore, due to such characteristics, the uneven distribution of ions in the liquid crystal layer and the adverse effect thereof are eliminated, and by relaxing the internal electric field due to the polarization of the liquid crystal molecules, the bistability of the liquid crystal molecules is enhanced to improve the switching characteristics and the like. I was able to improve.
本発明においては配向膜の導電率は、ρ=1×108Ωcm
以下であればいずれの導電率でもよいが、導電率があま
りに高すぎると、同一基板内における複数電極がショー
トしてしまう如き問題が生じるので、好ましい導電率の
範囲はρ=1×108〜1×106Ωcmの範囲である。配向膜
の導電率をρ=1×108Ωcm以下にする好ましい1方法
は、配向膜の形成にあたり、従来配向膜として使用され
ているような樹脂材料中に適当な導電性材料を添加し配
向膜を形成する方法である。In the present invention, the conductivity of the alignment film is ρ = 1 × 10 8 Ωcm
Any conductivity may be used as long as it is below, but if the conductivity is too high, a problem such as short-circuiting of a plurality of electrodes in the same substrate occurs, so that the preferable conductivity range is ρ = 1 × 10 8 to It is in the range of 1 × 10 6 Ωcm. One preferable method for adjusting the conductivity of the alignment film to ρ = 1 × 10 8 Ωcm or less is to align the alignment film by adding a suitable conductive material to a resin material that is conventionally used as the alignment film. It is a method of forming a film.
尚、本発明で用いた配向膜の導電率(Ωcm)は、別途に
作成した配向膜をASTM(AMERICAN NATIONAL STANDARD)
D−257に従って測定したものである。For the conductivity (Ωcm) of the alignment film used in the present invention, the alignment film prepared separately can be measured by ASTM (AMERICAN NATIONAL STANDARD)
It is measured according to D-257.
本発明に用いられる配向膜の形成用材料としては、従来
公知のもの、例えばポリビニルアルコール、ポリイミ
ド、ポリアミドイミド、ポリエステル、ポリカーボネー
ト、ポリビニルアセタール、ポリ塩化ビニル、ポリ酢酸
ビニル、ポリアミド、ポリスチレン、セルロース樹脂、
メラミン樹脂、ユリヤ樹脂、アクリル樹脂等の樹脂類、
あるいは感光性ポリイミド、感光性ポリアミド、環化ゴ
ム系フォトレジスト、フェノールノボラック系フォトレ
ジストあるいは電子線フォトレジスト[(メタ)クリレ
ートのモノマーまたはオリゴマー、エポキシ化−1,4−
ポリブタジエン等]等から選択して使用できる。As the material for forming the alignment film used in the present invention, conventionally known materials such as polyvinyl alcohol, polyimide, polyamide imide, polyester, polycarbonate, polyvinyl acetal, polyvinyl chloride, polyvinyl acetate, polyamide, polystyrene, cellulose resin,
Resins such as melamine resin, urea resin, acrylic resin,
Alternatively, photosensitive polyimide, photosensitive polyamide, cyclized rubber photoresist, phenol novolac photoresist or electron beam photoresist [(meth) acrylate monomer or oligomer, epoxidized-1,4-
Polybutadiene, etc.] and the like.
上記の如き材料は一般に絶縁性であるので、これらの材
料を好ましくは溶剤を用いて塗工液とし、該塗工液中に
適当な導電性材料を均一に分散させることによって適当
な導電性を付与することができる。Since the materials as described above are generally insulative, it is preferable to use these materials as a coating solution by using a solvent, and to disperse a suitable conductive material in the coating solution to obtain a suitable conductivity. Can be granted.
導電性材料としては従来公知の導電性材料はいずれも使
用できるが、液晶素子の表示面の基板上に導電性配向膜
を形成する場合には、透明な導電性材料を用いるのが好
ましく、例えば、Sn、In、Ni、Ti等の遷移金属酸化物お
よびこれらに原子価の異なる酸化物を固溶させたものが
好ましく、例えば、SnO2-Sb2O3系等がある。これらの導
電性材料は、光透過性を妨げることが無い様に可視光波
長(400〜700nm)より粒径を細かくしたもの、すなわ
ち、0.4μm以下、好ましくは0.2μm以下の粒径にした
ものを用いるのが好ましい。As the conductive material, any conventionally known conductive material can be used, but when forming a conductive alignment film on the substrate of the display surface of the liquid crystal element, it is preferable to use a transparent conductive material, for example, , Sn, In, Ni, Ti and other transition metal oxides, and oxides of these having different valences in solid solution are preferable, and examples thereof include SnO 2 —Sb 2 O 3 system. These conductive materials have a finer particle size than the visible light wavelength (400 to 700 nm) so as not to interfere with light transmission, that is, a particle size of 0.4 μm or less, preferably 0.2 μm or less. Is preferably used.
また、表示面と反対側に導電性配向膜を形成する場合に
は、使用する導電性材料は必ずしも透明性である必要は
なく、例えば、導電性のカーボン、金、銀、銅等の金属
粉末あるいはこれらの金属の繊維やウイスカー等も使用
できる。Further, when forming a conductive alignment film on the side opposite to the display surface, the conductive material used does not necessarily need to be transparent, for example, conductive carbon, gold, silver, copper or other metal powder. Alternatively, fibers of these metals or whiskers can be used.
上記の導電性材料は、上記の配向膜形成用塗工液中に分
散させてもよいし、また予め樹脂液中に高濃度に分散さ
せたものを添加してもよく、特に後者が好ましい。導電
性材料の塗工液中への添加量は、形成される配向膜の導
電率がρ=1×108Ωcm以下となる量であればよいが、
一般的には樹脂100重量部あたり5重量部以上、好まし
くは5〜50重量%の割合で添加する。このような導電性
材料の種類および使用量を変化させることによって、得
られる導電性配向膜の導電率は任意に変化させることが
可能である。The above-mentioned conductive material may be dispersed in the above-mentioned coating liquid for forming an alignment film, or may be previously dispersed at a high concentration in a resin liquid, and the latter is particularly preferable. The amount of the conductive material added to the coating liquid may be such that the conductivity of the formed alignment film is ρ = 1 × 10 8 Ωcm or less.
Generally, it is added in an amount of 5 parts by weight or more, preferably 5 to 50% by weight, based on 100 parts by weight of the resin. By changing the type and the amount of such a conductive material used, the conductivity of the obtained conductive alignment film can be arbitrarily changed.
以上の如き導電性材料を含む塗工液を用いて電極が形成
されている基板面にスピナーコーティング方法等の任意
の方法で塗工し、乾燥あるいは硬化させ、必要に応じて
ラビング処理を施すことによって所望の導電性配向膜が
形成できる。Using the coating liquid containing the conductive material as described above, the surface of the substrate on which the electrode is formed is applied by any method such as a spinner coating method, dried or cured, and subjected to a rubbing treatment if necessary. Thus, a desired conductive alignment film can be formed.
これらの配向膜は、例えば50〜1000Å程度の薄層が好ま
しく、更に100Å以下の厚みがより好ましい。These alignment films are preferably thin layers of, for example, about 50 to 1000Å, more preferably 100Å or less.
以上は、合成樹脂を用いる方法であるが、本発明におい
ては、導電性であれば無機物の被膜でもよく、例えば、
前述の如き導電性の無機酸化物や金、銀、銅、アルミニ
ウム等の金属をスパッタ方法、蒸着方法等任意の方法で
導電性配向膜を形成してもよい。The above is a method using a synthetic resin, but in the present invention, an inorganic film may be used as long as it is conductive, for example,
The conductive alignment film may be formed of any of the conductive inorganic oxides and metals such as gold, silver, copper and aluminum as described above by an arbitrary method such as a sputtering method or a vapor deposition method.
以上の如くして電極を形成した基板の少なくとも一方に
導電性配向膜を形成し、次いで常法に従って素子を構成
することによって本発明の強誘電性液晶素子が得られ
る。The ferroelectric liquid crystal device of the present invention can be obtained by forming a conductive alignment film on at least one of the substrates on which the electrodes are formed as described above and then constructing the device according to a conventional method.
(作用・効果) 以上の如き本発明によれば、従来の強誘電性液晶素子に
おいて、その配向膜の導電率をρ=1×108Ωcm以下と
することによって、液晶層内のイオンの偏在による液晶
分子のバラツキや経時的変化が生じなくなり、液晶分子
の双安定性が向上して、優れた表示特性の強誘電性液晶
素子が提供されるものである。(Operation / Effect) According to the present invention as described above, in the conventional ferroelectric liquid crystal element, the conductivity of the orientation film is set to ρ = 1 × 10 8 Ωcm or less, whereby the uneven distribution of ions in the liquid crystal layer is achieved. The present invention provides a ferroelectric liquid crystal device having excellent display characteristics, because variations in liquid crystal molecules and changes with time are not caused, and bistability of liquid crystal molecules is improved.
次の実施例を挙げて本発明を更に具体的に説明する。The present invention will be described more specifically with reference to the following examples.
実施例1 電極層を有するガラス基板上に誘電体層としてSiO2(ス
パッタ)を形成し、その上に導電性カーボンブラックを
7重量%含有するポリビニルアルコール膜をスピナーコ
ート方法で塗工し、乾燥硬化後、その表面をアセテート
布(毛先長1.5mm)でラビング処理して導電性配向膜を
形成した。この基板を下基板として用い、且つ、導電性
カーボンブラックを含有しない配向膜を有する基板を上
基板として用い、この間にチッソ社製の液晶CS−1014を
用い、セル厚をアルミナビーズでコントロールして、1.
0μm〜1.6μmの液晶層厚みを有する本発明の強誘電性
液晶表示素子とした。Example 1 SiO 2 (sputter) was formed as a dielectric layer on a glass substrate having an electrode layer, and a polyvinyl alcohol film containing 7% by weight of conductive carbon black was applied thereon by a spinner coating method and dried. After the curing, the surface was rubbed with an acetate cloth (hair length 1.5 mm) to form a conductive alignment film. Using this substrate as a lower substrate, and using a substrate having an alignment film containing no conductive carbon black as an upper substrate, liquid crystal CS-1014 manufactured by Chisso Corporation in the meantime, the cell thickness is controlled by alumina beads. , 1.
The ferroelectric liquid crystal display device of the present invention has a liquid crystal layer thickness of 0 μm to 1.6 μm.
この場合の導電性配向膜の導電率を、ASTM D−257に従
って室温で測定したところ約ρ=3×107Ωcmであっ
た。一方上基板上に形成した導電性カーボンを含有しな
い配向膜の導電率はρ=1×1010Ωcmであった。The conductivity of the conductive alignment film in this case was about ρ = 3 × 10 7 Ωcm when measured at room temperature according to ASTM D-257. On the other hand, the conductivity of the alignment film containing no conductive carbon formed on the upper substrate was ρ = 1 × 10 10 Ωcm.
比較例1 実施例1において、導電性カーボンを使用しないことを
除き、他は実施例1と同様にして比較用の強誘電性液晶
素子を得た。Comparative Example 1 A ferroelectric liquid crystal device for comparison was obtained in the same manner as in Example 1 except that the conductive carbon was not used.
この素子を徐冷配向後、±20V、50Hzの交流を20sec.印
加後、24hr.放置した場合、実施例1の素子は劣化しな
かったが、この比較例の素子の場合は閾値が0.5msのパ
ルスで5V上昇する劣化を生じた。When this device was gradually cooled and oriented, and then ± 20 V and 50 Hz alternating current was applied for 20 sec. And left for 24 hr, the device of Example 1 did not deteriorate, but the device of this comparative example had a threshold value of 0.5 ms. Pulse caused deterioration of 5V increase.
実施例2 実施例1における配向膜に備えて、SiOの斜方晶系蒸着
膜を700Åの厚みに形成し、その上に更に金を50Åの厚
みに蒸着させた導電性配向膜を使用し、他は実施例1と
同様にして本発明の強誘電性液晶素子を形成した。Example 2 In preparation for the alignment film in Example 1, an orthorhombic system vapor-deposited film of SiO was formed to a thickness of 700 Å, and a conductive alignment film was used on which gold was further evaporated to a thickness of 50 Å, A ferroelectric liquid crystal device of the present invention was formed in the same manner as in Example 1 except for the above.
この場合の導電性配向膜の導電率を、ASTM D−257に従
って室温で測定したところ、約ρ=1×108Ωcmであっ
た。The conductivity of the conductive alignment film in this case was measured at room temperature according to ASTM D-257, and was about ρ = 1 × 10 8 Ωcm.
比較例2 実施例2において、金を蒸着させないことを除き、他は
実施例2と同様にして比較用の強誘電性液晶素子を得
た。Comparative Example 2 A ferroelectric liquid crystal device for comparison was obtained in the same manner as in Example 2 except that gold was not deposited.
この素子を徐冷配向後、±20V、50Hzの交流を20sec.印
加後、5hr.放置した場合、実施例1の素子は劣化しなか
ったが、この比較例の素子の場合は閾値が0.5msのパル
スで1V上昇する劣化を生じた。When this device was gradually cooled and oriented, and then ± 20 V and 50 Hz alternating current was applied for 20 sec. And left for 5 hr, the device of Example 1 did not deteriorate, but the device of this comparative example had a threshold value of 0.5 ms. The pulse caused deterioration of 1V increase.
第1図は本発明の強誘電性液晶素子の断面の1部を図解
的に示す図であり、第2図は強誘電性液晶素子の液晶分
子の分極の二つの状態を図解的に示す図であり、第3図
および第4図は、強誘電性液晶素子を作動を図解的に示
す図である。 1、1′、11……基板 2、18……液晶層 3、16、17……液晶分子 4……双極子モーメント 5、5′……配向状態 12……電極 13……導電性配向膜 14、15……イオンFIG. 1 is a diagram schematically showing a part of a cross section of a ferroelectric liquid crystal device of the present invention, and FIG. 2 is a diagram schematically showing two states of polarization of liquid crystal molecules of the ferroelectric liquid crystal device. FIG. 3 and FIG. 4 are diagrams schematically showing the operation of the ferroelectric liquid crystal element. 1, 1 ', 11 ... substrate 2, 18 ... liquid crystal layer 3, 16, 17 ... liquid crystal molecule 4 ... dipole moment 5, 5' ... alignment state 12 ... electrode 13 ... conductive alignment film 14, 15 …… AEON
Claims (3)
向した電極基板間に強誘電性液晶層を挟持してなる強誘
電性液晶素子において、該配向膜の少なくとも一方の導
電率をρ=1×108Ωcm以下としたことを特徴とする強
誘電性液晶素子。1. A ferroelectric liquid crystal device comprising a ferroelectric liquid crystal layer sandwiched between two opposing electrode substrates, at least one of which has an alignment film, wherein the conductivity of at least one of the alignment films is ρ = Ferroelectric liquid crystal device characterized by being set to 1 × 10 8 Ωcm or less.
有する樹脂膜である特許請求の範囲第(1)項に記載の
強誘電性液晶素子。2. The ferroelectric liquid crystal device according to claim 1, wherein the alignment film is a resin film containing 5% by weight or more of a conductive material.
銀等の金属粒子である特許請求の範囲第(1)項に記載
の強誘電性液晶素子。3. The conductive material is conductive carbon or gold,
The ferroelectric liquid crystal element according to claim (1), which is a metal particle such as silver.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26568486A JPH0711637B2 (en) | 1986-11-10 | 1986-11-10 | Ferroelectric liquid crystal element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26568486A JPH0711637B2 (en) | 1986-11-10 | 1986-11-10 | Ferroelectric liquid crystal element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63121020A JPS63121020A (en) | 1988-05-25 |
| JPH0711637B2 true JPH0711637B2 (en) | 1995-02-08 |
Family
ID=17420564
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26568486A Expired - Fee Related JPH0711637B2 (en) | 1986-11-10 | 1986-11-10 | Ferroelectric liquid crystal element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0711637B2 (en) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0711632B2 (en) * | 1986-11-25 | 1995-02-08 | キヤノン株式会社 | Voltage application method for chiral smectic liquid crystal device |
| US5231523A (en) * | 1988-08-03 | 1993-07-27 | Tdk Corporation | Liquid crystal elements and conductive organic compound film-forming compositions |
| JP2799418B2 (en) * | 1989-06-30 | 1998-09-17 | 株式会社 半導体エネルギー研究所 | Ferroelectric liquid crystal electro-optical device |
| JPH0395522A (en) * | 1989-09-07 | 1991-04-19 | Fujitsu Ltd | Liquid crystal display element |
| US5327272A (en) * | 1991-03-27 | 1994-07-05 | Canon Kabushiki Kaisha | Optical modulation element |
| JPH1026755A (en) * | 1992-07-07 | 1998-01-27 | Seiko Instr Inc | Liquid crystal electrooptical device |
| JPH0651315A (en) * | 1992-07-28 | 1994-02-25 | Fujitsu Ltd | Ferroelectric liquid crystal display device and its production |
| DE69330854D1 (en) * | 1992-07-30 | 2001-11-08 | Canon Kk | Liquid crystal display device |
| US5592190A (en) * | 1993-04-28 | 1997-01-07 | Canon Kabushiki Kaisha | Liquid crystal display apparatus and drive method |
| EP0695965B1 (en) * | 1994-08-04 | 2002-04-10 | Canon Kabushiki Kaisha | Liquid crystal device |
| US5973761A (en) * | 1997-01-31 | 1999-10-26 | Canon Kabushiki Kaisha | Ferroelectic liquid crystal device having a low-resistivity layer below an alignment control layer |
| EP1229378A1 (en) | 1999-10-06 | 2002-08-07 | Matsushita Electric Industrial Co., Ltd. | Liquid crystal element, liquid crystal display device and production methods therefor |
| JP6543936B2 (en) * | 2015-01-20 | 2019-07-17 | 大日本印刷株式会社 | Liquid crystal cell, light control material, laminated glass, method of manufacturing liquid crystal cell, method of manufacturing light control material, mold for manufacturing laminated glass |
-
1986
- 1986-11-10 JP JP26568486A patent/JPH0711637B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63121020A (en) | 1988-05-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4932757A (en) | Ferroelectric liquid crystal device | |
| JP2982330B2 (en) | Liquid crystal display device | |
| JPH0120725B2 (en) | ||
| US5838410A (en) | Optical modulation element | |
| JPH0711637B2 (en) | Ferroelectric liquid crystal element | |
| JPS6377019A (en) | Ferroelectric liquid crystal element | |
| JP2794369B2 (en) | Liquid crystal element | |
| JP2647828B2 (en) | Liquid crystal device manufacturing method | |
| JP2721357B2 (en) | Liquid crystal device | |
| JPH0557568B2 (en) | ||
| JPH0718990B2 (en) | Liquid crystal cell | |
| JPS63163426A (en) | Ferroelectric liquid crystal element | |
| JP2592957B2 (en) | Liquid crystal element | |
| JPH0711632B2 (en) | Voltage application method for chiral smectic liquid crystal device | |
| JP2707074B2 (en) | Liquid crystal element | |
| JP3176079B2 (en) | Optical modulator | |
| JPH0833560B2 (en) | Liquid crystal element | |
| JP2681779B2 (en) | Liquid crystal cell | |
| JPH07191327A (en) | Ferroelectric liquid crystal element | |
| JP3757365B2 (en) | Ferroelectric smectic liquid crystal dispersed in polymer | |
| JP2851500B2 (en) | Liquid crystal display | |
| JPH0392824A (en) | Liquid crystal display element | |
| JP2775494B2 (en) | Ferroelectric liquid crystal device | |
| JP3180171B2 (en) | Ferroelectric liquid crystal device | |
| JP2562585B2 (en) | Liquid crystal device and method for manufacturing liquid crystal device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |