JPH0711611B2 - Method of manufacturing waveguide - Google Patents
Method of manufacturing waveguideInfo
- Publication number
- JPH0711611B2 JPH0711611B2 JP63246928A JP24692888A JPH0711611B2 JP H0711611 B2 JPH0711611 B2 JP H0711611B2 JP 63246928 A JP63246928 A JP 63246928A JP 24692888 A JP24692888 A JP 24692888A JP H0711611 B2 JPH0711611 B2 JP H0711611B2
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- layer
- width
- width portion
- constant width
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000010410 layer Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 16
- 239000012790 adhesive layer Substances 0.000 claims description 15
- 239000000126 substance Substances 0.000 claims description 11
- 239000000853 adhesive Substances 0.000 claims description 6
- 230000001070 adhesive effect Effects 0.000 claims description 6
- 230000008878 coupling Effects 0.000 description 12
- 238000010168 coupling process Methods 0.000 description 12
- 238000005859 coupling reaction Methods 0.000 description 12
- 230000003287 optical effect Effects 0.000 description 11
- 239000013307 optical fiber Substances 0.000 description 8
- 239000010936 titanium Substances 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000001808 coupling effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Optical Couplings Of Light Guides (AREA)
- Optical Integrated Circuits (AREA)
Description
【発明の詳細な説明】 「産業上の利用分野」 この発明は、光ファイバとの結合を良好にした導波路の
製造方法に関する。TECHNICAL FIELD The present invention relates to a method of manufacturing a waveguide with good coupling with an optical fiber.
「従来の技術」 近時、種々の導波形光デバイスが提案され、光スイッチ
などに応用されている。このような導波形光デバイスの
基礎となる三次元光導波路（以下、導波路と略称する）
としては、例えば第５図に示すようにニオブ酸リチウム
製導波路基板１にチタンを拡散せしめて三次元導波層
（以下、導波層と略称する。）２を形成したものが知ら
れている。“Prior Art” Recently, various waveguide type optical devices have been proposed and applied to optical switches and the like. Three-dimensional optical waveguide (hereinafter abbreviated as "waveguide") which is the basis of such a waveguide type optical device.
As a known example, as shown in FIG. 5, a three-dimensional waveguide layer (hereinafter abbreviated as a waveguide) 2 is formed by diffusing titanium into a waveguide substrate 1 made of lithium niobate. There is.
ところで、このようなチタン拡散ニオブ酸リチウム光導
波路を作製するには、導波層が導波路中において同一の
幅となり、かつ均一な比屈折率差となるようにして作製
するのが普通である。By the way, in order to fabricate such a titanium-diffused lithium niobate optical waveguide, it is usual to fabricate the waveguide layers so that the waveguide layers have the same width and a uniform relative refractive index difference. .
「発明が解決しようとする課題」 しかしながら、上記のようにして得られた導波路にあっ
ては、光ファイバに接続するにあたって第５図中二点鎖
線で示すように導波層２におけるスポット３が楕円形状
となるため、円形のスポットを有する光ファイバとはモ
ード不整合となって結合効率が低くなり、したがって結
合損失が大きくなるといった問題がある。[Problems to be Solved by the Invention] However, in the waveguide obtained as described above, when connecting to the optical fiber, the spots 3 in the waveguide layer 2 as shown by the chain double-dashed line in FIG. Has an elliptical shape, there is a problem that the mode is mismatched with an optical fiber having a circular spot, the coupling efficiency is lowered, and thus the coupling loss is increased.
一方、このような導波路を例えば光スイッチに適用する
にあたり、導波層を導波路基板中で湾曲して作製した場
合には、導波層の断面積が大きいほどその湾曲部分にお
いて大きな導波損失が生ずるといった問題がある。On the other hand, when applying such a waveguide to an optical switch, for example, when the waveguide layer is manufactured by being curved in the waveguide substrate, the larger the cross-sectional area of the waveguide layer, the larger the waveguide at the curved portion. There is a problem of loss.
よって、導波路を光スイッチ等に応用するに際し上述し
たような損失を少なくするには、光ファイバとの結合部
分で導波層の断面（スポットサイズ）を大きくし、かつ
導波層の湾曲する部分で断面を小さくすれば良いと考え
られるが、その場合規格化周波数を変えずに上記両方の
条件を満足するような導波路を作製する方法が現在のと
ころ提供されておらず、したがって現状ではこのような
ものを得るのは不可能である。Therefore, in order to reduce the above-mentioned loss when the waveguide is applied to an optical switch or the like, the cross section (spot size) of the waveguide layer is increased at the coupling portion with the optical fiber, and the waveguide layer is curved. It is considered that the cross section should be made small at the part, but in that case, there is not currently provided a method for producing a waveguide that satisfies both of the above conditions without changing the standardized frequency, and therefore, at present, It is impossible to get something like this.
この発明は上記事情に鑑みてなされたもので、その目的
とするところは、結合損失、導波損失が少なく、かつ規
格周波数が安定した導波路を製造し得る方法を提供する
ことにある。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a method capable of manufacturing a waveguide having a small standardized frequency with a small coupling loss and a low waveguide loss.
「課題を解決するための手段」 この発明の導波路の製造方法では、導波路基板に、屈折
率を高める物質を付着せしめて一定の幅の定幅部と、こ
の定幅部と同一の軸を有しかつ該定幅部より漸次幅の広
くなる変幅部とからなる第１の付着層を形成し、次にこ
の第１の付着層を導波路基板中に拡散せしめ仮導波層を
形成し、次いで該導波路基板の仮導波層側に屈折率を低
める物質を付着せしめて第２の付着層を形成し、かつこ
の第２の付着層をその非付着部が上記第１の付着層と同
一の軸となるように形成するとともに、該非付着部が第
１の付着層における定幅部と変幅部との上および周辺に
形成され、かつ定幅部上およびその周辺においては上記
変幅部の最大幅と同一の幅となり、変幅部上およびその
周辺においては該変幅部とその長さ方向で逆のパターン
となるように形成し、その後該第２の付着層を拡散せし
めて導波層を形成することを上記課題の解決手段とし
た。[Means for Solving the Problem] In the method of manufacturing a waveguide of the present invention, a constant width portion having a constant width is formed by attaching a substance that enhances the refractive index to the waveguide substrate, and the same axis as the constant width portion. And a variable width portion having a width gradually wider than the constant width portion is formed, and then the first adhesive layer is diffused into the waveguide substrate to form a temporary waveguide layer. Then, a substance for lowering the refractive index is adhered to the temporary waveguide layer side of the waveguide substrate to form a second adhesive layer, and the second adhesive layer has the non-adhesive portion with the first adhesive layer. The non-adhesive portion is formed on and around the constant width portion and the variable width portion in the first adhesion layer, and on the constant width portion and its periphery, It has the same width as the maximum width of the variable width section, and on and around the variable width section in the variable width section and its length direction. The solution is to solve the above-mentioned problems by forming the waveguide layer by forming it so as to have a reverse pattern and then diffusing the second adhesive layer.
以下、この発明の一例について詳しく説明する。Hereinafter, an example of the present invention will be described in detail.
まず、第１図に示すように導波路基板10に、屈折率を高
める物質をスパッタ法や蒸着法などにより付着し、リフ
トオフにより以下に述べるパターンで厚さ600〜900Å程
度の第１の付着層11を形成する。第１の付着層11は、一
定の幅の定幅部12と、この定幅部と同一の軸を有しかつ
該定幅部12より漸次幅の広くなる変幅部13とからなるも
のである。ここで導波路基板10としては、LiNb-O3、LiT
aO3、PLZT［PZT（チタン酸・ジルコン酸鉛個溶体PbTiO3
・PbZrO3）のPbの一部をLaで置換した透光性圧電材料）
等の電気光学結晶や、あるいはガラス（コーニング705
9）、石英などの材料からなるものが用いられる。ま
た、屈折率を高める物質としては、Ti,Fe,Ta,Nb,Ag等の
元素あるいはこれら元素を含む化合物が用いられる。First, as shown in FIG. 1, a substance for increasing the refractive index is deposited on the waveguide substrate 10 by a sputtering method or a vapor deposition method, and lift-off is performed to form a first deposition layer having a thickness of about 600 to 900Å in the following pattern. Forming 11. The first adhesive layer 11 is composed of a constant width portion 12 having a constant width and a variable width portion 13 having the same axis as the constant width portion and gradually widening from the constant width portion 12. is there. Here, as the waveguide substrate 10, LiNb-O 3 , LiT
aO 3 , PLZT [PZT (PbTiO 3 individual solution of lead titanate / zirconate
・ Transparent piezoelectric material in which part of Pb of PbZrO 3 ) is replaced with La)
Electro-optic crystal such as glass or glass (Corning 705
9), a material such as quartz is used. Further, as the substance for increasing the refractive index, elements such as Ti, Fe, Ta, Nb and Ag or compounds containing these elements are used.
次に、上記第１の付着層11を形成した導波路基板10を加
熱し、屈折率を高める物質を導波路基板10中に拡散せし
めて仮導波層14を形成する。この場合に加熱条件として
は、水蒸気雰囲気にて950〜1050℃程度で４〜10時間程
度が好適とされる。Next, the waveguide substrate 10 on which the first adhesion layer 11 is formed is heated to diffuse the substance for increasing the refractive index into the waveguide substrate 10 to form the temporary waveguide layer 14. In this case, the heating conditions are preferably about 950 to 1050 ° C. for about 4 to 10 hours in a steam atmosphere.
次いで、第２図に示すように屈折率を低める物質をスパ
ッタリング等によって導波路基板10および仮導波層14上
に付着せしめ、リフトオフにより以下に述べるパターン
で厚さ500〜1000Å程度の第２の付着層15を形成する。
第２の付着層15は、その屈折率を低める物質が付着され
ない非付着部16が、第２図中二点鎖線で示す上記第１の
付着層と同一の軸となるように形成されたものである。
非付着部16は、第１の付着層11における定幅部12と変幅
部13との上および周辺に形成されたもので、定幅部12上
およびその周辺においては上記変幅部13の最大幅と同一
の幅となるよう形成され、また変幅部13上およびその周
辺においては該変幅部13とその長さ方向で逆のパターン
となるように形成されたものである。ここで屈折率を低
める物質としては、Mg,Na,A1,F等の元素あるいはこれら
元素を含む化合物が用いられる。Then, as shown in FIG. 2, a substance that lowers the refractive index is deposited on the waveguide substrate 10 and the temporary waveguide layer 14 by sputtering or the like, and lift-off is performed to form a second layer having a thickness of about 500 to 1000Å in the pattern described below. The adhesion layer 15 is formed.
The second adhesive layer 15 is formed such that the non-adhesive portion 16 to which the substance that lowers the refractive index is not adhered has the same axis as the first adhesive layer shown by the chain double-dashed line in FIG. Is.
The non-adhesive portion 16 is formed on and around the constant width portion 12 and the variable width portion 13 in the first adhesive layer 11, and is formed on and around the constant width portion 12 of the variable width portion 13 above. It is formed so as to have the same width as the maximum width, and on the variable width portion 13 and its periphery, the variable width portion 13 is formed to have a pattern opposite to that in the length direction. Here, as the substance that lowers the refractive index, elements such as Mg, Na, A1, and F, or compounds containing these elements are used.
その後、上記第２の付着層15を形成した導波路基板10を
加熱し、屈折率を低める物質を導波路基板10および仮導
波層14中に拡散せしめて仮導波層14を導波層17とする。
この場合に加熱条件としては、不活性雰囲気にて850〜9
50℃程度で５〜８時間程度が好適とされる。After that, the waveguide substrate 10 on which the second adhesion layer 15 is formed is heated to diffuse the substance for lowering the refractive index into the waveguide substrate 10 and the temporary waveguide layer 14 to form the temporary waveguide layer 14 into the waveguide layer. It will be 17.
In this case, the heating condition is 850-9 in an inert atmosphere.
A temperature of about 50 ° C. for about 5 to 8 hours is suitable.
このようにして得られた導波路にあっては、導波層17の
一方に大きな断面（スポットサイズ）を有し、他方を小
さな断面としているため、大きい方を光ファイバとの結
合部とすればその結合損失が少なくなり、また小さい方
を湾曲した場合にその導波損失が少なくなる。In the thus-obtained waveguide, one of the waveguide layers 17 has a large cross section (spot size) and the other has a small cross section. Therefore, the larger one is a coupling portion with the optical fiber. For example, the coupling loss is small, and the waveguide loss is small when the smaller one is curved.
さらに、第１の付着層11における変幅部13に対応する部
分での導波層17の比屈折率差が、第２の付着層15の拡散
により幅が狭くなるにしたがって大きくなり、かつ定幅
部12に対応する部分での比屈折率差が変幅部13の最小幅
に対応する部分での比屈折率差と同一に形成されている
ので、導波層17全長に亙ってほぼ規格化周波数が一定に
なる。Further, the relative refractive index difference of the waveguide layer 17 in the portion corresponding to the variable width portion 13 in the first adhesion layer 11 becomes larger as the width becomes narrower due to diffusion of the second adhesion layer 15, and is constant. Since the relative refractive index difference in the portion corresponding to the width portion 12 is formed to be the same as the relative refractive index difference in the portion corresponding to the minimum width of the variable width portion 13, it is almost the same over the entire length of the waveguide layer 17. The normalized frequency becomes constant.
また、このようにして得られた導波路を例えば光スイッ
チに適用する場合、導波層17の大きな断面（スポットサ
イズ）側を光ファイバとの結合部とし、かつ小さな断面
側を湾曲せしめるようにすれば、結合損失、導波損失と
もに少なく、しかもその全長に亙ってほぼ規格化周波数
が一体なものとなる。When the thus obtained waveguide is applied to, for example, an optical switch, the large cross-section (spot size) side of the waveguide layer 17 is used as a coupling portion with the optical fiber, and the small cross-section side is curved. By doing so, both the coupling loss and the waveguide loss are small, and the normalized frequencies are almost integrated over the entire length.
「実施例」 以下、実施例によりこの発明をさらに具体的に説明す
る。[Examples] Hereinafter, the present invention will be described in more detail with reference to Examples.
まず、厚さ4mm、直径３インチのニオブ酸リチウム（LiN
bO3）製ウェファを用意し、これの上にスパッタリング
によってTiを厚さ850Åに被覆し、さらにこれをリフト
オフによって第３図に示したパターンの第１の付着層18
を形成した。この場合に、第３図において幅w1を10μ
ｍ、w2を８μｍ、長さl1を2mm、l2を4mmとした。First, 4 mm thick and 3 inch diameter lithium niobate (LiN
Prepare a wafer made of bO 3 ), coat Ti with a thickness of 850 Å by sputtering, and lift it off to deposit the first adhesion layer 18 of the pattern shown in FIG.
Was formed. In this case, the width w 1 in FIG.
m, w 2 was 8 μm, length l 1 was 2 mm, and l 2 was 4 mm.
次に、このウェファを水蒸気中にて1050℃で６時間加熱
し、付着したTiをウェファ中に拡散せしめた。Next, this wafer was heated in steam at 1050 ° C. for 6 hours to diffuse the attached Ti into the wafer.
次いで、このウェファのTiを拡散させた側の面に、スパ
ッタリングによってMgOを厚さ500Åに均一に被覆し、さ
らにこれをリフトオフによって第４図に示したパターン
の第２の付着層19を形成した。この場合に、第２の付着
層19をその非付着部20が第１の付着層と同一の軸となる
ように形成し、かつ第４図において幅w3を８μｍ、w4を
10μｍ、長さl3を2mm、l4を4mmとした。Then, the surface of the wafer on which the Ti was diffused was uniformly coated with MgO to a thickness of 500 Å by sputtering, and the second adhesion layer 19 having the pattern shown in FIG. 4 was formed by lift-off. . In this case, the second adhesion layer 19 is formed so that the non-adhesion portion 20 has the same axis as the first adhesion layer, and the width w 3 is 8 μm and w 4 is set in FIG.
The length was 10 μm, the length l 3 was 2 mm, and l 4 was 4 mm.
その後、このウェファをアルゴン雰囲気にて900℃で５
時間加熱し、付着したMgOを拡散せしめて導波層を形成
し、導波路を得た。Then, this wafer is heated at 900 ° C. in an argon atmosphere for 5 minutes.
The waveguide was obtained by heating for a period of time to diffuse the attached MgO to form a waveguide layer.
このようにして得られた導波路のスポットサイズを調べ
たところ、第３図に示す第１の付着層18の幅広側の端部
18a（出射端）におけるスポットサイズは、ウェファの
幅方向で６μｍ、厚さ方向で4.6μｍであった。また、
第１の付着層18の定幅部18b（導波路部）のスポットサ
イズは、ウェファの幅方向で4.8μｍ、厚さ方向で3.7μ
ｍであった。When the spot size of the thus obtained waveguide was examined, the wide end of the first adhesion layer 18 shown in FIG.
The spot size at 18a (emission end) was 6 μm in the width direction of the wafer and 4.6 μm in the thickness direction. Also,
The spot size of the constant width portion 18b (waveguide portion) of the first adhesion layer 18 is 4.8 μm in the width direction of the wafer and 3.7 μm in the thickness direction.
It was m.
さらに、上記出射端（端部18a）の端面をARを施し、そ
の後光ファイバとの結合性を調べたところ、結合損失は
0.1dB以下であった。また、導波路部（定幅部部18b）の
屈曲損失を調べたところ、30Rで0.1dB/mm以下、20Rで0.
4dB/mmであった。Furthermore, when the end face of the emitting end (end portion 18a) was subjected to AR and then the coupling property with the optical fiber was examined, the coupling loss was
It was less than 0.1 dB. Also, when the bending loss of the waveguide part (constant width part 18b) was examined, it was 0.1 dB / mm or less at 30R and 0 at 20R.
It was 4 dB / mm.
「発明の効果」 以上説明したように、この発明の導波路の製造方法によ
れば、導波層の一方の断面（スポットサイズ）を大き
く、かつ他方を小さくするとともに、その全長に亙って
比屈折率差をほぼ均一にすることができる。したがって
得られた導波路は、スポットサイズの大きい方を光ファ
イバとの結合部とすればその結合損失が少ないものとな
り、また小さい方を湾曲した場合にはその導波損失が少
ないものとなる。また、これによりこの導波路は、光ス
イッチ、光変調器等の光デバイスに好適に用いることが
できるものとなる。"Effects of the Invention" As described above, according to the method of manufacturing a waveguide of the present invention, one cross section (spot size) of the waveguide layer is made large and the other is made small, and over the entire length thereof. The relative refractive index difference can be made substantially uniform. Therefore, in the obtained waveguide, if the larger spot size is used as the coupling portion with the optical fiber, the coupling loss is small, and if the smaller one is curved, the waveguide loss is small. Further, this makes this waveguide suitable for use in optical devices such as optical switches and optical modulators.
第１図ないし第４図はこの発明に係わる図であって、第
１図および第２図はこの発明の方法を説明するための平
面図、第３図および第４図はこの発明の一実施例を説明
するための平面図、第５図は従来の導波路の一例を示す
概略構成図である。 10……導波路基板、11（18）……第１の付着層、12……
定幅部、13……変幅部、14……仮導波層、15（19）……
第２の付着層、16（20）……非付着部、17……導波層。1 to 4 are views relating to the present invention, FIGS. 1 and 2 are plan views for explaining the method of the present invention, and FIGS. 3 and 4 are one embodiment of the present invention. FIG. 5 is a plan view for explaining an example, and FIG. 5 is a schematic configuration diagram showing an example of a conventional waveguide. 10 ... Waveguide substrate, 11 (18) ... First adhesion layer, 12 ...
Constant width part, 13 …… Variable width part, 14 …… Temporary waveguiding layer, 15 (19) ……
2nd adhesion layer, 16 (20) ... Non-adhesion part, 17 ... Waveguide layer.
Claims (1)
せしめて一定の幅の定幅部と、この定幅部と同一の軸を
有しかつ該定幅部より漸次幅の広くなる変幅部とからな
る第１の付着層を形成し、次にこの第１の付着層を導波
路基板中に拡散せしめ仮導波層を形成し、次いで該導波
路基板の仮導波層側に屈折率を低める物質を付着せしめ
て第２の付着層を形成し、かつこの第２の付着層をその
非付着部が上記第１の付着層と同一の軸となるように形
成するとともに、該非付着部が第１の付着層における定
幅部と変幅部との上および周辺に形成され、かつ定幅部
上およびその周辺においては上記変幅部の最大幅と同一
の幅となり、変幅部上およびその周辺においては該変幅
部とその長さ方向で逆のパターンとなるように形成し、
その後該第２の付着層を拡散せしめて導波層を形成する
ことを特徴とする導波路の製造方法。1. A constant width part having a constant width by adhering a substance for increasing a refractive index to a waveguide substrate, and having the same axis as the constant width part and gradually becoming wider than the constant width part. A first adhesion layer composed of a variable width portion is formed, then the first adhesion layer is diffused into the waveguide substrate to form a temporary waveguide layer, and then the temporary waveguide layer side of the waveguide substrate is formed. A second adhesive layer is formed by attaching a substance that lowers the refractive index to the second adhesive layer, and the second adhesive layer is formed such that its non-adhesive portion has the same axis as that of the first adhesive layer, and The non-adhesive portion is formed on and around the constant width portion and the variable width portion in the first adhesive layer, and has the same width as the maximum width of the variable width portion on and around the constant width portion, On the width portion and its periphery, the variable width portion and the lengthwise direction are formed in the opposite pattern,
A method of manufacturing a waveguide, characterized in that the second adhesive layer is then diffused to form a waveguide layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246928A JPH0711611B2 (en) | 1988-09-30 | 1988-09-30 | Method of manufacturing waveguide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63246928A JPH0711611B2 (en) | 1988-09-30 | 1988-09-30 | Method of manufacturing waveguide |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0293605A JPH0293605A (en) | 1990-04-04 |
| JPH0711611B2 true JPH0711611B2 (en) | 1995-02-08 |
Family
ID=17155842
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63246928A Expired - Lifetime JPH0711611B2 (en) | 1988-09-30 | 1988-09-30 | Method of manufacturing waveguide |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0711611B2 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766089B2 (en) * | 1990-04-27 | 1995-07-19 | ▲禎▼二 内田 | Method for manufacturing substrate for optical surface mount circuit |
| KR100265795B1 (en) | 1997-11-18 | 2000-09-15 | 윤종용 | Optical waveguide chip |
| JP2007079225A (en) * | 2005-09-15 | 2007-03-29 | Nippon Telegr & Teleph Corp <Ntt> | Wavelength conversion element connection method and connection member |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0269702A (en) * | 1988-09-06 | 1990-03-08 | Fujikura Ltd | Waveguide and its manufacture, and optical switch |
-
1988
- 1988-09-30 JP JP63246928A patent/JPH0711611B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0293605A (en) | 1990-04-04 |
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