JPH0711495B2 - Photoelectron measurement method - Google Patents
Photoelectron measurement methodInfo
- Publication number
- JPH0711495B2 JPH0711495B2 JP57075242A JP7524282A JPH0711495B2 JP H0711495 B2 JPH0711495 B2 JP H0711495B2 JP 57075242 A JP57075242 A JP 57075242A JP 7524282 A JP7524282 A JP 7524282A JP H0711495 B2 JPH0711495 B2 JP H0711495B2
- Authority
- JP
- Japan
- Prior art keywords
- measured
- photoelectron
- work function
- photoelectron source
- thin plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/227—Measuring photoelectric effect, e.g. photoelectron emission microscopy [PEEM]
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
Description
【発明の詳細な説明】 本発明は電子顕微鏡、電子分光装置などの電子線応用機
器分野において使用される光電子放出型電子源の評価方
法に関する。例えば、光電子放出現象を用いたスピン偏
極電子源を使用した計測を行うためには、計測に先立っ
て、この電子源自体の基本的な特性が明きらかにされて
いなければ、得られた計測結果が意味を持たない。本発
明は、このため、光電子放出型電子源の基本特性を評価
するための光電子測定方法を提案するものである。The present invention relates to a method for evaluating a photoelectron emission type electron source used in the field of electron beam applied equipment such as an electron microscope and an electron spectroscope. For example, in order to perform measurement using a spin-polarized electron source using the photoemission phenomenon, if the basic characteristics of the electron source itself were not clarified prior to the measurement, it was obtained. The measurement result has no meaning. Therefore, the present invention proposes a photoelectron measuring method for evaluating the basic characteristics of a photoelectron emission type electron source.
アルカリ原子の蒸着量のモニターを行うために表面電離
現象を使う方法はLangmuir（I.Langmuir et.al.,Proc.S
oc.（London）A107（1925）61）が使つている。また、
ケルビン法による仕事関数測定はZisman（W.A.Zisman.R
ev.Sci.Instrum,3（1932）367）が原型を示している。
さらに、光電子の角度依存性を考慮しないエネルギー分
布の測定法はPierceら（D.T.Pierce et.al.,Rev.Sci.In
strum.,41（1970）1740）が原型を示している。Langmuir (I.Langmuir et.al., Proc.S is a method of using the surface ionization phenomenon to monitor the deposition amount of alkali atoms.
oc. (London) A107 (1925) 61). Also,
The work function measurement by the Kelvin method is Zisman (WAZisman.R
ev.Sci.Instrum, 3 (1932) 367) shows the prototype.
Furthermore, the method for measuring the energy distribution without considering the angular dependence of photoelectrons is described by Pierce et al. (DTPierce et.al., Rev. Sci. In.
strum., 41 (1970) 1740) shows the prototype.
光電子放出型電子源の特性は周囲の雰囲気の影響を受け
て変化するので、通常、超高真空容器の中に入れて使用
する。しかし、各種測定を超高真空中で行つている間に
も電子源の特性が変化する可能性があり、これを迅速に
追跡することが必要である。Since the characteristics of the photoelectron emission type electron source change under the influence of the surrounding atmosphere, it is usually used by putting it in an ultra-high vacuum container. However, the characteristics of the electron source may change even while various measurements are performed in an ultra-high vacuum, and it is necessary to quickly track this.
したがつて、本発明の目的は上述した電子源の特性を簡
単、かつ、迅速に測定できる光電子測定方法を提供する
ことにある。Therefore, an object of the present invention is to provide a photoelectron measuring method capable of measuring the characteristics of the electron source described above simply and quickly.
上記目的を達成するために本発明においては、光電子放
出面のアルカリ原子蒸着量と、仕事関数値の測定には、
それぞれ高温タングステン表面（1700〜2000K）と、タ
ングステン清浄表面とが必要であり、この条件を一枚の
タングステン薄板で満たすように構成し、また、光電子
のエネルギー分布の角度依存性の測定と、空間分布の測
定とを、同一のエネルギー分析器を使い、球面アノード
とフアラデーカップとを組み合わせて測定するように構
成したことを特徴としている。To achieve the above object, in the present invention, the amount of alkali atom vapor deposition on the photoelectron emission surface, and the measurement of the work function value,
A high temperature tungsten surface (1700-2000K) and a tungsten clean surface are required respectively, and this condition is configured to be satisfied by a single thin sheet of tungsten, and the angle dependence of the energy distribution of photoelectrons is measured and the space is measured. The measurement of the distribution is characterized in that the same energy analyzer is used to measure the combination of the spherical anode and the Faraday cup.
以下、本発明を図を用いて説明する。The present invention will be described below with reference to the drawings.
第１〜３図は本発明による光電子測定方法の実施例を示
したものである。第１図は本発明を実施するに好適な測
定装置の基本的な構成を示す概念図であり、１は超高真
空容器、２は電子源、３はタングステン薄板、４はセシ
ウム（Cs）源、５はケルビンプローブ、６はフアラデー
カップ、７は球面アノード、８はグリツド、９は入射光
である。電子源２は光電子放出型スピン偏極電子源と
し、GaAs単結晶板の表面にCs源４を用いてCsが蒸着され
たものを考える。1 to 3 show an embodiment of the photoelectron measuring method according to the present invention. FIG. 1 is a conceptual diagram showing a basic configuration of a measuring apparatus suitable for carrying out the present invention, 1 is an ultrahigh vacuum container, 2 is an electron source, 3 is a tungsten thin plate, 4 is a cesium (Cs) source. 5 is a Kelvin probe, 6 is a Faraday cup, 7 is a spherical anode, 8 is a grid, and 9 is incident light. The electron source 2 is a photo-emission spin-polarized electron source, and it is considered that Cs source 4 is used to deposit Cs on the surface of a GaAs single crystal plate.
第２図に示すようにGaAs板２に蒸着するCs量をタングス
テン薄板（温度1700K〜2000K）３を使つて測定する（第
２図（ａ））。加熱Ｗ板３表面では入射Cs原子はすべて
Cs+イオンに電離されるのでCs+イオン電流測定からCs蒸
着量が分かる。例えば、1500℃程度の白熱したタングス
テン表面にアルカリ原子（Cs,Kなど）を照射すると、表
面で完全に電離（Cs→Cs+）された後表面から離脱する
ので、まず、アルカリ原子の照射量がイオン電流（C
s+）として測定できる。この表面電離の原理は、例え
ば、実験物理学講座14:共立出版p60−61に表面電離が他
検出素子として紹介されている。第２図（ｂ）にGaAs板
２にCsを蒸着している様子を示している。次に、ケルビ
ン法の原理に基き、同一のＷ板３を2500K以上でフラツ
シングして表面を清浄にした後、ケルビンプローブ５の
仕事関数を校正し（第２図（ｃ））その後、ケルビンプ
ローブ５でGaAs板２（Cs蒸着後）の仕事関数を測定する
（第２図（ｄ））。このGaAs板２に波長１μｍ程度の光
９を照射して光電子（スピン偏極している）を放出さ
せ、エネルギー分析器の球面グリツド８とフアラデーカ
ップ６とを使つてエネルギー分布の角度依存性を測定す
る（第３図（ａ））。つぎに、グリツド８に球面アノー
ド（螢光体塗布）７を重ねて、光電子の空間分布を測定
する（第３図（ｂ））。As shown in FIG. 2, the amount of Cs deposited on the GaAs plate 2 is measured using a tungsten thin plate (temperature 1700K to 2000K) 3 (FIG. 2A). On the surface of the heating W plate 3, all incident Cs atoms are
Since it is ionized by Cs + ions, the amount of Cs deposited can be known from the Cs + ion current measurement. For example, when an incandescent tungsten surface at about 1500 ° C is irradiated with alkali atoms (Cs, K, etc.), it is completely ionized (Cs → Cs + ) on the surface and then detaches from the surface. Is the ion current (C
It can be measured as s + ). The principle of surface ionization is introduced, for example, in Experimental Physics Course 14: Kyoritsu Shuppan, p60-61, where surface ionization is another detection element. FIG. 2B shows a state in which Cs is vapor-deposited on the GaAs plate 2. Next, based on the principle of the Kelvin method, after flushing the same W plate 3 at 2500 K or more to clean the surface, the work function of the Kelvin probe 5 is calibrated (Fig. 2 (c)), and then the Kelvin probe is used. The work function of the GaAs plate 2 (after vapor deposition of Cs) is measured at 5 (Fig. 2 (d)). The GaAs plate 2 is irradiated with light 9 having a wavelength of about 1 μm to emit photoelectrons (spin-polarized), and the angular dependence of energy distribution is measured using the spherical grid 8 and the Faraday cup 6 of the energy analyzer. (FIG. 3 (a)). Next, a spherical anode (fluorescent substance coating) 7 is overlaid on the grid 8 and the spatial distribution of photoelectrons is measured (Fig. 3 (b)).
本発明によれば、（イ）アルカリ原子の蒸着量とそれに
よる光電子放出面の仕事関数の変化を真空を破壊しない
でほぼ同一の真空条件の下で測定できる、（ロ）光電子
のエネルギー分布の角度依存性と、空間分布とを同時に
測定できる。According to the present invention, (a) the vapor deposition amount of alkali atoms and the change in the work function of the photoelectron emission surface due to the vapor deposition can be measured under almost the same vacuum condition without breaking the vacuum. The angle dependence and the spatial distribution can be measured at the same time.
これまで、上記（イ）、（ロ）の機能を一連の測定手順
として実行することは光電子測定方法として提案された
ことが無く、本発明によれば、測定を著しく効率的に行
うとともに、実質的な経時変化の無い正確な測定を実現
できる効果がある。Until now, performing the functions of (a) and (b) above as a series of measurement procedures has never been proposed as a photoelectron measurement method, and according to the present invention, the measurement is performed significantly efficiently and There is an effect that it is possible to realize accurate measurement that does not change with time.
第１図は本発明による光電子測定方法を実施するに好適
な測定装置全体の概略構成図、第２図（ａ），（ｂ）は
Cs蒸着量測定法の説明図、同図（ｃ），（ｄ）は仕事関
数測定法の説明図、第３図（ａ），（ｂ）は光電子のエ
ネルギー分布の角度依存性と空間分布の測定法の説明図
である。 １……超高真空容器、２……電子源（GaAs単結晶）、３
……タングステン薄板、４……セシウム（Cs）蒸着源、
５……ケルビンプローブ、６……フアラデーカップ、７
……球面アノード、８……球面グリツド、９……入射
光。FIG. 1 is a schematic configuration diagram of the whole measuring apparatus suitable for carrying out the photoelectron measuring method according to the present invention, and FIGS. 2 (a) and 2 (b) are
An explanatory view of the Cs vapor deposition amount measuring method, (c) and (d) of the same figure are explanatory diagrams of the work function measuring method, and (a) and (b) of FIG. 3 show angular dependence and spatial distribution of photoelectron energy distribution. It is explanatory drawing of a measuring method. 1 ... Ultra high vacuum container, 2 ... Electron source (GaAs single crystal), 3
... Tungsten thin plate, 4 ... Cesium (Cs) vapor deposition source,
5 ... Kelvin probe, 6 ... Faraday cup, 7
...... Spherical anode, 8 ... Spherical grid, 9 ... Incoming light.
───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 昭52−77792（ＪＰ，Ａ) 特開 昭57−161643（ＪＰ，Ａ) 特公 昭51−44434（ＪＰ，Ｂ１) ─────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-52-77792 (JP, A) JP-A-57-161643 (JP, A) JP-B-51-44434 (JP, B1)
Claims (1)
リ原子を照射するとともに、照射されたアルカリ原子の
イオン電流測定により、照射量を計測すること、前記タ
ングステン薄板に近接して配置された光電子源にアルカ
リ原子を付着させるとともに照射時間を計測し、且つ、
前記照射量の計測結果を基礎に付着量を決定すること、
前記タングステン薄板を清浄にしてケルビンプローブの
仕事関数を校正すること、前記ケルビンプローブの仕事
関数の校正結果を基礎に光電子源の仕事関数を計測する
こと、前記光電子源に光を照射すること、前記光照射に
応じて光電子源の発生するスピン偏極している光電子の
角度依存性をファラデーカップにより計測すること、前
記光照射に応じて光電子源の発生するスピン偏極してい
る光電子の空間分布を球面アノードとグリッドとにより
計測することを特徴とする光電子測定方法。1. A tungsten thin plate is irradiated with an alkali atom in a vacuum container, and the irradiation amount is measured by measuring an ion current of the irradiated alkali atom, and a photoelectron source arranged close to the tungsten thin plate. Measure the irradiation time while attaching alkali atoms to the
Determining the adhesion amount based on the measurement result of the irradiation amount,
Calibrating the work function of the Kelvin probe by cleaning the tungsten thin plate, measuring the work function of the photoelectron source based on the calibration result of the work function of the Kelvin probe, irradiating the photoelectron source with light, The angular dependence of spin-polarized photoelectrons generated by the photoelectron source in response to light irradiation is measured by a Faraday cup, and the spatial distribution of spin-polarized photoelectrons generated by the photoelectron source in response to the light irradiation. Is measured with a spherical anode and a grid.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075242A JPH0711495B2 (en) | 1982-05-07 | 1982-05-07 | Photoelectron measurement method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57075242A JPH0711495B2 (en) | 1982-05-07 | 1982-05-07 | Photoelectron measurement method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58193441A JPS58193441A (en) | 1983-11-11 |
| JPH0711495B2 true JPH0711495B2 (en) | 1995-02-08 |
Family
ID=13570553
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57075242A Expired - Lifetime JPH0711495B2 (en) | 1982-05-07 | 1982-05-07 | Photoelectron measurement method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0711495B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015510595A (en) * | 2012-02-24 | 2015-04-09 | ケーピー テクノロジー リミテッド | measuring device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60262043A (en) * | 1984-06-09 | 1985-12-25 | Rikagaku Kenkyusho | Measurement of surface cleanness degree |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5144434A (en) * | 1974-10-14 | 1976-04-16 | Shaken Kk | MOJIHATSUSE ISOCHI |
| FR2335839A1 (en) * | 1975-12-19 | 1977-07-15 | Commissariat Energie Atomique | METHOD OF ANALYSIS OF SAMPLES IN INSULATING MATERIAL BY PHOTO-ELECTRONIC SPECTROMETRY AND SAMPLE HOLDER FOR THE IMPLEMENTATION OF THE SAID PROCESS |
-
1982
- 1982-05-07 JP JP57075242A patent/JPH0711495B2/en not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015510595A (en) * | 2012-02-24 | 2015-04-09 | ケーピー テクノロジー リミテッド | measuring device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58193441A (en) | 1983-11-11 |
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