JPH07102980B2 - Quartz glass member for semiconductor manufacturing - Google Patents
Quartz glass member for semiconductor manufacturingInfo
- Publication number
- JPH07102980B2 JPH07102980B2 JP14481487A JP14481487A JPH07102980B2 JP H07102980 B2 JPH07102980 B2 JP H07102980B2 JP 14481487 A JP14481487 A JP 14481487A JP 14481487 A JP14481487 A JP 14481487A JP H07102980 B2 JPH07102980 B2 JP H07102980B2
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- ppm
- glass member
- viscosity
- semiconductor manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims description 37
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000012535 impurity Substances 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- 229910052783 alkali metal Inorganic materials 0.000 claims description 8
- 150000001340 alkali metals Chemical class 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052700 potassium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 6
- 238000002844 melting Methods 0.000 description 6
- 230000008018 melting Effects 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Landscapes
- Glass Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は、単結晶の引き上げに用いるルツボ、ウェーハ
の熱拡散等に用いる炉芯管、ボート等の半導体製造用石
英ガラス部材に関する。TECHNICAL FIELD The present invention relates to a crucible used for pulling a single crystal, a furnace core tube used for thermal diffusion of a wafer, a quartz glass member for semiconductor production such as a boat.
［従来の技術］ 単結晶の引き上げや熱処理等の半導体製造プロセスにお
いては、通常、耐熱製と高純度の点から石英ガラス製の
ルツボ、炉芯管、ボート等の部材が使用されている。し
かし、石英ガラス部材は、高温で粘性が低下して変形
し、長時間の使用が不可能である。[Prior Art] In semiconductor manufacturing processes such as pulling of a single crystal and heat treatment, members such as a crucible, a furnace core tube, and a boat made of quartz glass are usually used in terms of heat resistance and high purity. However, the quartz glass member is reduced in viscosity at high temperature and is deformed, so that it cannot be used for a long time.
従来、高温での粘性低下による変形を防止するため、例
えば特開昭49−59818号または特公昭47−1477号に所載
のように、石英ガラス部材の外表面表層部にクリストバ
ライトの層を形成することが提案されている。Conventionally, in order to prevent deformation due to a decrease in viscosity at high temperatures, a cristobalite layer is formed on the outer surface layer of a quartz glass member, as described in, for example, JP-A-49-59818 or JP-B-47-1477. It is suggested to do so.
［発明が解決しようとする問題点］ しかしながら、外表面表層部にクリストバライトの層を
形成した従来の石英ガラス部材によれば、クリストバラ
イトを生成する核として高温でのSiO2中の拡散速度がNa
より小さい不純物元素を添加しており、最近、この不純
物元素が半導体製造において悪影響を与えることが問題
となっている。特に、半導体単結晶を引き上げるルツボ
には使用不可能である。[Problems to be Solved by the Invention] However, according to the conventional quartz glass member in which the cristobalite layer is formed on the outer surface layer, the diffusion rate in SiO 2 at high temperature is Na as a nucleus for producing cristobalite.
A smaller impurity element is added, and recently, it has been a problem that this impurity element adversely affects semiconductor manufacturing. In particular, it cannot be used for a crucible for pulling a semiconductor single crystal.
また、上記不純物元素が石英ガラス中に混入すると網目
形成イオンあるいは網目修飾イオンとなり、SiO2の結合
を弱めるので、石英ガラス中に広範囲に混入した場合、
高温での粘性が低下し逆効果となる。Further, when the above-mentioned impurity element is mixed into quartz glass, it becomes a network-forming ion or a network-modifying ion, which weakens the bond of SiO 2 .
This has the opposite effect of decreasing the viscosity at high temperatures.
一方、石英ガラス部材の外表面層だけに高濃度の不純物
層を形成すると、使用に際しての冷熱サイクルによる石
英ガラスとクリストバライトの熱膨張差から外表面が剥
離し易く、半導体の汚染の原因となる。On the other hand, if a high-concentration impurity layer is formed only on the outer surface layer of the quartz glass member, the outer surface is likely to be peeled off due to the difference in thermal expansion between the quartz glass and cristobalite due to the cooling / heating cycle during use, which causes contamination of the semiconductor.
そこで、本発明は、熱変形を起こさず、半導体に何らの
悪影響を与えない半導体製造用石英ガラス部材を提供し
ようとするものである。Therefore, the present invention is intended to provide a quartz glass member for semiconductor production which does not cause thermal deformation and does not have any adverse effect on the semiconductor.
［問題点を解決するための手段］ 前記問題点を解決するため、本発明は、Na,K,Liのアル
カリ金属の総含有量が2ppm以下、Zrを５〜10ppm含有
し、他の金属不純物の総含有量が30ppm以下、残部SiO2
である半導体製造用石英ガラス部材である。[Means for Solving Problems] In order to solve the above problems, the present invention provides a total content of alkali metals of Na, K, and Li of 2 ppm or less, Zr of 5 to 10 ppm, and other metal impurities. Total content of 30ppm or less, balance SiO 2
Is a quartz glass member for semiconductor production.
［作 用］ 上記手段によれば、アルカリ金属及び他の金属不純物の
含有量が少なく、きわめて高濃度の石英ガラスとなる。[Operation] According to the above means, the content of alkali metal and other metal impurities is small, and the silica glass has an extremely high concentration.
また、Zrが石英ガラス中のSiと置換して高融点のZrO2と
なり、石英ガラスの高温での粘性が高くなる。Further, Zr is replaced with Si in the silica glass to become ZrO 2 having a high melting point, and the viscosity of the silica glass at high temperature becomes high.
ここで、Na,K,Liのアルカリ金属の総含有量が2ppmを越
えると次の問題が生ずる。Here, if the total content of Na, K, and Li alkali metals exceeds 2 ppm, the following problems occur.
アルカリ金属は拡散し易いので、処理する半導体を汚
染する。Alkali metals readily diffuse and therefore contaminate the semiconductor being processed.
SiO2の結合を弱め、石英ガラスの高温での粘性が低下
する。This weakens the SiO 2 bond and reduces the viscosity of quartz glass at high temperatures.
アルカリ金属の拡散によりクリストバライトの生成を
助長する。The diffusion of alkali metals promotes the formation of cristobalite.
また、他の金属不純物の総含有量が30ppmを越えると、
石英ガラス中のSiO2の結合を弱め、石英ガラスの高温で
の粘性が低下する。Also, if the total content of other metal impurities exceeds 30 ppm,
This weakens the SiO 2 bonds in the quartz glass and reduces the viscosity of the quartz glass at high temperatures.
さらに、Zrの含有量が5ppm未満では、粘性がほとんど高
くならない一方、10ppmを越えるとZrは高融点であるた
め量が多すぎて完全に石英ガラス中のSiと置換させて製
造することが困難となり、粘性が高くならない。Furthermore, when the content of Zr is less than 5 ppm, the viscosity hardly increases, while when it exceeds 10 ppm, the amount is too large because Zr has a high melting point, and it is difficult to completely replace Si in the silica glass for production. And the viscosity does not increase.
［実施例］ 以下、本発明の実施例を図面と共に説明する。EXAMPLES Examples of the present invention will be described below with reference to the drawings.
天然水晶を微粉砕し、篩分後精製処理して金属不純物の
総含有量が30ppm以下の精製粉を得た。この精製粉にZrO
2を添加し、アルカリ金属を飛散させるため長時間（12
時間）加熱溶融し、Zr含有量がそれぞれ3ppm（比較例
１）,6ppm（実施例１）,9ppm（実施例２）,12ppm（比較
例２）の石英ガラス体を得た。これらの石英ガラス体の
アルカリ金属の総含有量、他の金属不純物の総含有量及
び1200℃での粘性率を第１表に示す。Natural quartz was finely pulverized, sieved and refined to obtain a refined powder having a total content of metal impurities of 30 ppm or less. ZrO to this refined powder
2 is added for a long time (12
After heating and melting, quartz glass bodies having Zr contents of 3 ppm (Comparative Example 1), 6 ppm (Example 1), 9 ppm (Example 2), and 12 ppm (Comparative Example 2) were obtained. Table 1 shows the total content of alkali metals, the total content of other metal impurities, and the viscosity at 1200 ° C. of these quartz glass bodies.
したがって、本発明に係る石英ガラス部材は、粘性が高
く、また、半導体の製造に際し何ら悪影響を与えないこ
とがわかる。 Therefore, it is understood that the quartz glass member according to the present invention has high viscosity and does not have any adverse effect on the production of semiconductors.
しかして、Zrは酸化数がIVであるので、図に示すよう
に、容易に石英ガラス中のSiと置換して高融点のZrO2と
なって存在し、酸化数がIV以外の不純物元素のように石
英ガラス中のSiO2の結合を弱めることもなく、石英ガラ
スの高温での粘性を高めている。However, since Zr has an oxidation number of IV, as shown in the figure, it easily replaces Si in the silica glass to form ZrO 2 having a high melting point, and the oxidation number of ZrO As described above, the viscosity of the silica glass at high temperature is increased without weakening the bond of SiO 2 in the silica glass.
［発明の効果］ 以上のように本発明によれば、アルカリ金属及び他の金
属不純物の含有量が少なく、きわめて高純度の石英ガラ
スとなるので、Si多結晶等の溶解または半導体ウェーハ
の熱処理に使用してもクリストバライトが発生しにく
く、また、不純物による半導体の汚染もほとんど生じな
い。[Advantages of the Invention] As described above, according to the present invention, the content of alkali metals and other metal impurities is small, and the silica glass becomes extremely high purity. Therefore, it can be used for melting Si polycrystals or for heat treatment of semiconductor wafers. Even if it is used, cristobalite hardly occurs, and the contamination of the semiconductor by impurities hardly occurs.
また、Zrが石英ガラス中のSiと置換して高融点のZrO2と
なって存在し、酸化数がIV以外の不純物元素のように石
英ガラス中のSiO2の結合を弱めることもなく、石英ガラ
スの高温での粘性が高くなるので、高温での使用に際し
て変形することがなく、長時間の使用が可能となる。Further, Zr is present as high-melting ZrO 2 by substituting Si in the quartz glass, and the oxidation number does not weaken the bond of SiO 2 in the quartz glass like the impurity elements other than IV, and the quartz Since the glass has a high viscosity at high temperatures, it does not deform when used at high temperatures and can be used for a long time.
図は本発明に係る石英ガラスの構造図である。 The figure is a structural diagram of the quartz glass according to the present invention.
Claims (1)
以下、Zrを５〜10ppm含有し、他の金属不純物の総含有
量が30ppm以下、残部SiO2であることを特徴とする半導
体製造用石英ガラス部材。1. The total content of Na, K, Li alkali metals is 2 ppm.
Hereinafter, a quartz glass member for semiconductor production, which contains 5 to 10 ppm of Zr, the total content of other metal impurities is 30 ppm or less, and the balance is SiO 2 .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14481487A JPH07102980B2 (en) | 1987-06-10 | 1987-06-10 | Quartz glass member for semiconductor manufacturing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14481487A JPH07102980B2 (en) | 1987-06-10 | 1987-06-10 | Quartz glass member for semiconductor manufacturing |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS63310748A JPS63310748A (en) | 1988-12-19 |
| JPH07102980B2 true JPH07102980B2 (en) | 1995-11-08 |
Family
ID=15371081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14481487A Expired - Fee Related JPH07102980B2 (en) | 1987-06-10 | 1987-06-10 | Quartz glass member for semiconductor manufacturing |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07102980B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100842232B1 (en) * | 2001-03-26 | 2008-06-30 | 토소가부시키가이샤 | High durability quartz glass, method of and apparatus for making it, and members and apparatus using the same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5141786A (en) * | 1989-02-28 | 1992-08-25 | Shin-Etsu Chemical Co., Ltd. | Synthetic silica glass articles and a method for manufacturing them |
| JP6681269B2 (en) * | 2016-05-19 | 2020-04-15 | クアーズテック株式会社 | Quartz glass crucible |
-
1987
- 1987-06-10 JP JP14481487A patent/JPH07102980B2/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100842232B1 (en) * | 2001-03-26 | 2008-06-30 | 토소가부시키가이샤 | High durability quartz glass, method of and apparatus for making it, and members and apparatus using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS63310748A (en) | 1988-12-19 |
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